TW201320396A - LED structure with current blocking layer having a plurality of through holes - Google Patents
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本發明係一種發光二極體結構，尤指一種具有複數個貫穿孔洞的電流阻斷層之發光二極體結構。
The invention is a light-emitting diode structure, in particular to a light-emitting diode structure having a plurality of current blocking layers through the holes.
由於近代石化能源逐漸匱乏，對節能產品需求日益擴大，因此發光二極體（LED）的技術有長足的進步。而在石油價格不穩定的條件之下，全球各個國家積極地投入節能產品的開發，將發光二極體應用於省電燈泡便是此一趨勢下的產物。此外，隨著發光二極體技術的進步，白光或其它顏色（例如：藍光）發光二極體的應用也逐漸廣泛，現今其應用已可包括：液晶顯示器（LCD）的背光板、印表機、用於電腦之光學連接構件、指示燈、地面燈、逃生燈、醫療設備光源、汽車儀錶及內裝燈、輔助照明、主照明...等。
發光二極體除了由於耗電低、不含汞、壽命長、二氧化碳排放量低等優勢外，全球各國政府禁用汞的環保政策，也驅使研究人員投入白光發光二極體的研發與應用。在全球環保風潮方興未艾之際，被喻為綠色光源的發光二極體可符合全球的主流趨勢，如前所指，其已普遍應用於3C產品指示器與顯示裝置之上；而再隨著發光二極體生產良率的提高，單位製造成本也已大幅降低，因此發光二極體的需求持續增加。
承前所述，此刻開發高亮度的發光二極體已成為各國廠商的研發重點，然而當前之發光二極體仍存在缺陷。除了散熱之問題之外，傳統的發光二極體結構有許多的缺點會造成亮度下降的影響，而其中最主要的原因，就是電流散佈和電極遮光的問題。
於過去技術中，曾選擇使用銦錫氧化物做為透明導電層，其機制在於使P型電極的電流能較均勻地分布在整個P型半導體層，這樣可使整個P-N接面均勻的產生復合並且發光。雖然將銦錫氧化物直接沈積在P-氮化鎵上面會形成蕭基接觸（Schottky Contact），但由於銦錫氧化物具有較好的透光率，所以仍會選擇使用銦錫氧化物當透明導電層。
此外，發光二極體領域也開始採用覆晶式結構或是垂直式電極結構來提升發光效率。由於一般發光二極體是採用將藍寶石基板直接黏在杯座上的封裝方式；然而這樣的封裝方式會使光在輸出時，會受到黏接墊片及金屬打線的阻擋而導致發光亮度降低，因此有採用覆晶式結構來改善光會被阻擋的缺陷。
還有一種改善方式則為使用電流阻擋層。一般發光二極體的電流方向為最短路徑，如此將使大部分的電流皆注入P型電極下方的區域。這樣將導致大部分的光聚集在P型電極下方，因而使所產生的光被P型電極所阻擋而無法大量輸出，造成光輸出功率下降。因此，可使用電流阻擋層（Current Blocking Layer）來改善，此方法是使用蝕刻與化學氣相沉積的方式，來將絕緣體沉積於元件結構中。用來阻擋最短之路徑，因此使發光二極體的電流往其餘路徑來流動，進而使元件的光亮度提升。
本發明針對電流阻擋層之設計做進一步突破，使發光二極體的電流可更好地分散於半導體層，以提升發光二極體的發光效率。
Due to the gradual lack of energy in modern petrochemicals and the increasing demand for energy-saving products, the technology of light-emitting diodes (LED) has made great progress. Under the condition of unstable oil prices, countries around the world actively invest in the development of energy-saving products, and the application of light-emitting diodes to power-saving bulbs is the product of this trend. In addition, with the advancement of light-emitting diode technology, the application of white light or other color (for example, blue light) light-emitting diodes has gradually become widespread, and today its applications can include: backlights of liquid crystal displays (LCDs), printers , for optical connecting components of computers, indicator lights, ground lights, escape lights, medical equipment light sources, automotive instrumentation and interior lights, auxiliary lighting, main lighting, etc.
In addition to the advantages of low power consumption, mercury-free, long life, and low carbon dioxide emissions, the global government's ban on mercury environmental protection policies has also driven researchers to invest in the development and application of white light-emitting diodes. At a time when the global environmental protection trend is on the rise, the light-emitting diodes, which are referred to as green light sources, can conform to the global mainstream trend. As mentioned before, they have been widely used on 3C product indicators and display devices; The increase in the production yield of the diode and the unit manufacturing cost have also been greatly reduced, so the demand for the light-emitting diode continues to increase.
As mentioned above, the development of high-brightness LEDs at this moment has become the focus of research and development of manufacturers in various countries. However, the current LEDs still have defects. In addition to the problem of heat dissipation, the conventional light-emitting diode structure has many disadvantages that cause the brightness to drop, and the most important reason is the problem of current dispersion and electrode shading.
In the past technology, indium tin oxide was selected as the transparent conductive layer, and the mechanism is that the current of the P-type electrode can be more evenly distributed throughout the P-type semiconductor layer, so that the entire PN junction can be uniformly compounded. And shine. Although the direct deposition of indium tin oxide on P-GaN forms a Schottky Contact, since indium tin oxide has better light transmittance, indium tin oxide is still selected for transparency. Conductive layer.
In addition, the field of light-emitting diodes has also begun to adopt a flip-chip structure or a vertical electrode structure to improve luminous efficiency. Since the general light-emitting diode is a package method in which the sapphire substrate is directly adhered to the cup holder; however, such a package method causes the light to be blocked by the bonding pad and the metal wire when the light is output, thereby causing the brightness of the light to decrease. Therefore, there is a flip-chip structure to improve the defect that light is blocked.
Another improvement is the use of a current blocking layer. Generally, the current direction of the LED is the shortest path, so that most of the current is injected into the area under the P-type electrode. This will cause most of the light to collect under the P-type electrode, so that the generated light is blocked by the P-type electrode and cannot be output in a large amount, resulting in a decrease in light output power. Therefore, it can be improved by using a Current Blocking Layer by etching and chemical vapor deposition to deposit an insulator in the element structure. It is used to block the shortest path, so that the current of the light-emitting diode flows to the remaining paths, thereby increasing the brightness of the component.
The invention further breaks through the design of the current blocking layer, so that the current of the light emitting diode can be better dispersed in the semiconductor layer to improve the luminous efficiency of the light emitting diode.
本發明之主要目的，係提供一種具複數個貫穿孔洞之電流阻斷層之發光二極體結構，其透過將電流阻斷層製做為具有複數個貫穿孔洞，再利用該些貫穿孔洞中的導電材料所形成之導電填充層，使電流得以較均勻分散地抵達P型半導體層，使發光二極體的發光效率得以提高。
本發明之次要目的，係提供一種具複數個貫穿孔洞之電流阻斷層之發光二極體結構，其基板具有斜面，增加光的全反射機率，使發光二極體的發光效率得以提高。
為了達到上述之目的，本發明係揭示一種具複數個貫穿孔洞之電流阻斷層之發光二極體結構，其係包含一基板；一N型半導體層，係設於該基板之上方；一發光層，係設於該N型半導體層之上方；一P型半導體層，係設於該發光層之上方；一電流阻斷層，係設於該P型半導體層之上方，其具有複數個貫穿孔洞，該些貫穿孔洞係與該P型半導體層相接觸，且每一該些貫穿孔洞之內係設置一導電填充層；及一透明導電層，係覆蓋該電流阻斷層之上方。透過該發光二極體結構，發光二極體的發光效率得以再次提高。
The main object of the present invention is to provide a light-emitting diode structure having a plurality of current blocking layers through a hole, which is formed by using a current blocking layer as a plurality of through holes, and then utilizing the through holes. The conductive filling layer formed by the conductive material allows the current to be more uniformly dispersed to reach the P-type semiconductor layer, so that the luminous efficiency of the light-emitting diode is improved.
A secondary object of the present invention is to provide a light-emitting diode structure having a plurality of current blocking layers through a hole, the substrate having a sloped surface, increasing the total reflection probability of light, and improving the luminous efficiency of the light-emitting diode.
In order to achieve the above object, the present invention discloses a light emitting diode structure having a plurality of current blocking layers through a hole, which comprises a substrate; an N-type semiconductor layer is disposed above the substrate; a layer is disposed above the N-type semiconductor layer; a P-type semiconductor layer is disposed above the light-emitting layer; and a current blocking layer is disposed above the P-type semiconductor layer, and has a plurality of through layers The through holes are in contact with the P-type semiconductor layer, and each of the through holes is provided with a conductive filling layer; and a transparent conductive layer covers the current blocking layer. Through the light-emitting diode structure, the luminous efficiency of the light-emitting diode is again improved.
為使 貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：
於先前技術之該些發光二極體結構，其雖有透明導電層或是電流阻斷層之設計，然而尚未能更好的解決電流散佈的問題，仍有更進一步提升發光效率的空間，故本發明針對提升電流散佈的效果，設計此一發光二極體結構以達成高發光效率的目標。且此發光二極體結構應用廣泛，除了一般基礎之發光二極體之外，亦適合用於高壓發光二極體（HVLED）、交流電發光二極體（ACLED）等領域。
首先，請參考第一圖，本發明之具複數個貫穿孔洞之電流阻斷層之發光二極體結構係包含一基板10；一N型半導體層20；一發光層30；一P型半導體層40；一電流阻斷層50；複數個貫穿孔洞501；複數個導電填充層60；及一透明導電層70。
其中，該N型半導體層20係設於該基板10之上方；該發光層30係設於該N型半導體層20之上方；該P型半導體層40係設於該發光層30之上方；該電流阻斷層50係設於該P型半導體層40之上方；該些貫穿孔洞501位於該電流阻斷層50，且與該P型半導體層40相接觸；該些導電填充層60係位於該些貫穿孔洞501；而該透明導電層70係覆蓋該電流阻斷層50之上方。
除了上述元件之外，再請參考第一圖，本發明之具複數個貫穿孔洞之電流阻斷層之發光二極體結構更進一步包含一P型電極80及一N型電極90；而該基板10亦更進一步包含至少一個斜面部101。
其中，該P型電極80係位於該透明導電層70之上方，不對應覆蓋該些貫穿孔洞501；該N型電極90位於該N型半導體層；而該些斜面部101則位於該基板10之側面，其係與一底部102相連接，該底部102之長度係小於一頂部103。
本發明之具複數個貫穿孔洞之電流阻斷層之發光二極體結構提升發光效率之關鍵技術特徵在於設置具有該些貫穿孔洞501之該電流阻斷層50。請參考第一圖之發光二極體結構，電流經該P型電極80流入後，會先通過該透明導電層70。該透明導電層70之材質為銦錫氧化物，為銦氧化物（In2O3）和錫氧化物（SnO2）的混合物，通常質量比為90%之In2O3與10% SnO2。其處於薄膜狀態時為透明無色，並且具有導電性。經由電子束蒸發、物理氣相沉積，或是濺射沉積技術等方法，可製做出該透明導電層70。
待電流通過該透明導電層70之後，接著到達該電流阻斷層50。由於該電流阻斷層50的材質係選自於二氧化矽、氮化矽及氧化鋁之其中之一者，而該些材質皆為絕緣體，因此電流將難以通過該電流阻斷層50。然而，本案的電流阻斷層50雖然全面性地設置於該透明導電層70與該P型半導體層40之間，但其具有之該些貫穿孔洞501仍可讓電流通過。
該些貫穿孔洞501當中，即為該些導電填充層60，該些導電填充層60的材質為導電性材料。由於該導電填充層60與該透明導電層70係可為一體成形者，因此該些導電填充層60的材質可為銦錫氧化物，於製做手段上若非採一體成形（將該透明導電層70之銦錫氧化物延伸至該些貫穿孔洞501中，形成該些導電填充層60），則獨立選用其他具導電性之材料填入為該些導電填充層60。
由於該些貫穿孔洞501均勻分散於該電流阻斷層50，因此當電流經由該些貫穿孔洞501中之該些導電填充層60而繼續往電流方向行進時，將是較均勻地抵達該P型半導體層40。由於可確保電流均勻地抵達該P型半導體層40，因此意味著可確保大量的電子由該N型半導體層20均勻地注入到該P型半導體層40，大量的電洞由該P型半導體層40均勻地注入到該N型半導體層20。在電子、電洞移動的情況下，該發光層30即可均勻地出光，而非集中於部分區域。
除此之外，為確保光源所產生的光能順利發散出本發明之發光二極體結構，該P型電極80係設置於該透明導電層70之上方，且設置於不對應該些貫穿孔洞501。在此設計之下，該P型電極80下方隔著透明導電層70，完全對應到一不包含貫穿孔洞501之部分電流阻斷層50，如此一來可避免電流於該P型電極80之正下方流通，使出光時反遭到該P型電極80阻擋的可能性降到最小，確保良好的出光效率。
另外，本發明還對該基板10之結構設計有所突破。如前所述，該基板10之側面設有該斜面部101，且該斜面部101為平滑斜面，而又該斜面部101係與該底部102相連接，該底部102之長度係小於該頂部103，因此該基板10設有該斜面部101之區域為上寬下窄地往內縮。由於發光層30所發的光皆為全向性，因此有部分的光往該基板10行進，然而此為發光元件的出光反向，因此無助於增加發光效率。故本發明之基板10側邊設有該斜面部101，便可增加光的反射機率，其中，該斜面部101之斜面係為基板10側邊由底向上20~50微米處。如此可使發光亮度更為集中，使得發光效率獲得提昇。
透過此具複數個貫穿孔洞之電流阻斷層之發光二極體結構，該發光層30可均勻地出光，提高發光效率，再藉由基板10之斜面部101提高反射機率，確保光線能夠順利向上發散。
惟以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍，舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
本發明係實為一具有新穎性、進步性及可供產業利用者，應符合我國專利法所規定之專利申請要件無疑，爰依法提出發明專利申請，祈 鈞局早日賜准專利，至感為禱。
In order to provide a better understanding and understanding of the features of the present invention and the efficacies achieved, the preferred embodiments and detailed descriptions are provided as follows:
The light-emitting diode structures of the prior art have a transparent conductive layer or a current blocking layer design, but have not yet solved the problem of current spreading better, and still have room for further improving luminous efficiency. Therefore, the present invention aims to improve the effect of current spreading by designing such a light-emitting diode structure to achieve high luminous efficiency. Moreover, the structure of the light-emitting diode is widely used, and besides the general-purpose light-emitting diode, it is also suitable for the fields of high-voltage light-emitting diode (HVLED), alternating current light-emitting diode (ACLED) and the like.
First, referring to the first figure, the LED structure of the current blocking layer having a plurality of through holes includes a substrate 10; an N-type semiconductor layer 20; a light-emitting layer 30; and a P-type semiconductor layer. 40; a current blocking layer 50; a plurality of through holes 501; a plurality of conductive filling layers 60; and a transparent conductive layer 70.
The N-type semiconductor layer 20 is disposed above the substrate 10; the light-emitting layer 30 is disposed above the N-type semiconductor layer 20; the P-type semiconductor layer 40 is disposed above the light-emitting layer 30; The current blocking layer 50 is disposed above the P-type semiconductor layer 40. The through-holes 501 are located in the current blocking layer 50 and are in contact with the P-type semiconductor layer 40. The conductive filling layers 60 are located therein. The through holes 501; and the transparent conductive layer 70 covers the current blocking layer 50.
In addition to the above components, referring to the first figure, the LED structure of the current blocking layer having a plurality of through holes further includes a P-type electrode 80 and an N-type electrode 90; and the substrate 10 further includes at least one slope portion 101.
The P-type electrode 80 is located above the transparent conductive layer 70 and does not cover the through holes 501; the N-type electrode 90 is located in the N-type semiconductor layer; and the slope portions 101 are located on the substrate 10 The side is connected to a bottom portion 102 which is less than a top portion 103 in length.
The key technical feature of the light-emitting diode structure of the current blocking layer of the present invention having a plurality of through-holes to enhance the luminous efficiency is to provide the current blocking layer 50 having the through holes 501. Please refer to the structure of the light emitting diode of the first figure. After the current flows through the P-type electrode 80, the transparent conductive layer 70 is first passed. The material of the transparent conductive layer 70 is indium tin oxide, which is a mixture of indium oxide (In 2 O 3 ) and tin oxide (SnO 2 ), usually in a mass ratio of 90% of In 2 O 3 and 10% SnO 2 . . It is transparent and colorless when in the film state, and is electrically conductive. The transparent conductive layer 70 can be formed by electron beam evaporation, physical vapor deposition, or sputtering deposition techniques.
After the current passes through the transparent conductive layer 70, the current blocking layer 50 is then reached. Since the material of the current blocking layer 50 is selected from one of cerium oxide, tantalum nitride, and aluminum oxide, and the materials are all insulators, it is difficult for current to pass through the current blocking layer 50. However, although the current blocking layer 50 of the present invention is comprehensively disposed between the transparent conductive layer 70 and the P-type semiconductor layer 40, the through holes 501 can still allow current to pass therethrough.
Among the through holes 501, the conductive filling layers 60 are made of a conductive material. Since the conductive filling layer 60 and the transparent conductive layer 70 can be integrally formed, the conductive filling layer 60 can be made of indium tin oxide, and the transparent conductive layer can be formed integrally. 70 indium tin oxide extends into the through holes 501 to form the conductive filling layers 60), and other conductive materials are independently used to fill the conductive filling layers 60.
Since the through holes 501 are uniformly dispersed in the current blocking layer 50, when the current continues to travel in the current direction through the conductive filling layers 60 in the through holes 501, the P type will be more uniformly arrived. Semiconductor layer 40. Since it is ensured that the current uniformly reaches the P-type semiconductor layer 40, it is meant that a large amount of electrons can be uniformly injected into the P-type semiconductor layer 40 from the N-type semiconductor layer 20, and a large number of holes are formed by the P-type semiconductor layer. 40 is uniformly implanted into the N-type semiconductor layer 20. In the case where the electrons and the holes move, the light-emitting layer 30 can uniformly emit light instead of being concentrated on a part of the area.
In addition, in order to ensure that the light generated by the light source can smoothly diverge the light emitting diode structure of the present invention, the P-type electrode 80 is disposed above the transparent conductive layer 70 and disposed in the corresponding through hole 501. . Under this design, the P-type electrode 80 is disposed under the transparent conductive layer 70, and completely corresponds to a portion of the current blocking layer 50 that does not include the through hole 501, so that current can be avoided in the positive electrode of the P-type electrode 80. The flow underneath minimizes the possibility of being blocked by the P-type electrode 80 when light is emitted, ensuring good light extraction efficiency.
In addition, the present invention also provides a breakthrough in the structural design of the substrate 10. As described above, the side surface of the substrate 10 is provided with the slope portion 101, and the slope portion 101 is a smooth slope, and the slope portion 101 is connected to the bottom portion 102. The length of the bottom portion 102 is smaller than the top portion 103. Therefore, the area of the substrate 10 on which the inclined surface portion 101 is provided is inwardly narrowed from the upper side to the lower side. Since the light emitted by the luminescent layer 30 is omnidirectional, part of the light travels toward the substrate 10. However, this is the light emission of the illuminating element, and thus does not contribute to an increase in luminous efficiency. Therefore, the bevel portion 101 is provided on the side of the substrate 10 of the present invention to increase the probability of reflection of light. The slope of the slope portion 101 is such that the side of the substrate 10 is 20 to 50 microns from the bottom. In this way, the luminance of the light can be more concentrated, so that the luminous efficiency is improved.
Through the light-emitting diode structure of the current blocking layer with a plurality of through holes, the light-emitting layer 30 can uniformly emit light, improve the luminous efficiency, and improve the reflection probability by the inclined surface portion 101 of the substrate 10 to ensure the light can smoothly go up. Divergence.
The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the variations, modifications, and modifications of the shapes, structures, features, and spirits described in the claims of the present invention. All should be included in the scope of the patent application of the present invention.
The invention is a novelty, progressive and available for industrial use, and should meet the requirements of the patent application stipulated in the Patent Law of China, and the invention patent application is filed according to law, and the prayer bureau will grant the patent as soon as possible. prayer.
10．．．基板10. . . Substrate
101．．．斜面部101. . . Inclined face
102．．．底部102. . . bottom
103．．．頂部103. . . top
20．．．N型半導體層20. . . N-type semiconductor layer
30．．．發光層30. . . Luminous layer
40．．．P型半導體層40. . . P-type semiconductor layer
50．．．電流阻斷層50. . . Current blocking layer
501．．．貫穿孔洞501. . . Through hole
60．．．導電填充層60. . . Conductive filling layer
70．．．透明導電層70. . . Transparent conductive layer
80．．．P型電極80. . . P-type electrode
90．．．N型電極90. . . N-type electrode
第一圖：其係為本發明之一較佳實施例之結構示意圖。
First Figure: It is a schematic structural view of a preferred embodiment of the present invention.
10．．．基板10. . . Substrate
101．．．斜面部101. . . Inclined face
102．．．底部102. . . bottom
103．．．頂部103. . . top
20．．．N型半導體層20. . . N-type semiconductor layer
30．．．發光層30. . . Luminous layer
40．．．P型半導體層40. . . P-type semiconductor layer
50．．．電流阻斷層50. . . Current blocking layer
501．．．貫穿孔洞501. . . Through hole
60．．．導電填充層60. . . Conductive filling layer
70．．．透明導電層70. . . Transparent conductive layer
80．．．P型電極80. . . P-type electrode
90．．．N型電極90. . . N-type electrode
Claims (8)
一基板；
一N型半導體層，係設於該基板之上方；
一發光層，係設於該N型半導體層之上方；
一P型半導體層，係設於該發光層之上方；
一電流阻斷層，係設於該P型半導體層之上方，其具有複數個貫穿孔洞，該些貫穿孔洞係與該P型半導體層相接觸，且每一該些貫穿孔洞之內係設置一導電填充層；及
一透明導電層，係覆蓋該電流阻斷層之上方。A light emitting diode structure having a plurality of current blocking layers through a hole, the system comprising:
a substrate;
An N-type semiconductor layer is disposed above the substrate;
a light emitting layer is disposed above the N-type semiconductor layer;
a P-type semiconductor layer is disposed above the light-emitting layer;
a current blocking layer is disposed above the P-type semiconductor layer, and has a plurality of through holes, the through holes are in contact with the P-type semiconductor layer, and each of the through holes is provided with a a conductive filling layer; and a transparent conductive layer covering the current blocking layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100140730A TW201320396A (en) | 2011-11-08 | 2011-11-08 | LED structure with current blocking layer having a plurality of through holes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100140730A TW201320396A (en) | 2011-11-08 | 2011-11-08 | LED structure with current blocking layer having a plurality of through holes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201320396A true TW201320396A (en) | 2013-05-16 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100140730A TW201320396A (en) | 2011-11-08 | 2011-11-08 | LED structure with current blocking layer having a plurality of through holes |
Country Status (1)
| Country | Link |
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| TW (1) | TW201320396A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104638069A (en) * | 2015-02-04 | 2015-05-20 | 映瑞光电科技(上海)有限公司 | Vertical LED (Light-Emitting Diode) chip structure and manufacturing method thereof |
| US9117959B2 (en) | 2013-07-30 | 2015-08-25 | Lextar Electronics Corporation | Light emitting diode structure |
| US10741644B2 (en) | 2016-11-22 | 2020-08-11 | Delta Electronics, Inc. | Semiconductor devices with via structure and package structures comprising the same |
-
2011
- 2011-11-08 TW TW100140730A patent/TW201320396A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9117959B2 (en) | 2013-07-30 | 2015-08-25 | Lextar Electronics Corporation | Light emitting diode structure |
| US9444005B2 (en) | 2013-07-30 | 2016-09-13 | Lextar Electronics Corporation | Light emitting diode structure |
| CN104638069A (en) * | 2015-02-04 | 2015-05-20 | 映瑞光电科技(上海)有限公司 | Vertical LED (Light-Emitting Diode) chip structure and manufacturing method thereof |
| US10741644B2 (en) | 2016-11-22 | 2020-08-11 | Delta Electronics, Inc. | Semiconductor devices with via structure and package structures comprising the same |
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