CN101794837A - Photoconductive sensor based on asymmetric different dimensionalities structures - Google Patents
Photoconductive sensor based on asymmetric different dimensionalities structures Download PDFInfo
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- CN101794837A CN101794837A CN201010108593A CN201010108593A CN101794837A CN 101794837 A CN101794837 A CN 101794837A CN 201010108593 A CN201010108593 A CN 201010108593A CN 201010108593 A CN201010108593 A CN 201010108593A CN 101794837 A CN101794837 A CN 101794837A
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Abstract
The invention discloses a photoconductive sensor based on asymmetric different dimensionalities structures and relates to photoconductive sensor devices. The photoconductive sensor comprises a transparent conductive photoelectron emission layer, a photoelectric conversion layer, an electron receiving layer, an upper electrode lead and a lower electrode lead, wherein the transparent conductive photoelectron emission layer adopts a carbon nanometer tube film with low dimensionality, the photoelectric conversion layer adopts a titanium oxide nanometer tube array with intermediate dimensionality, the electron receiving layer adopts a titanium sheet with thickness of millimeter level, an insulating layer is arranged below the carbon nanometer tube film and at a connected region of the upper electrode lead and the carbon nanometer tube film and the lower surface of the titanium sheet and the lower electrode lead are connected, thereby forming the asymmetric different dimensionalities structure. The photoconductive sensor has the advantages of simple structure, convenient making, and the like and very fast photoelectric response speed; and wide spectrum response range can be widened to a visible light region from an ultraviolet light region, thus the photoconductive sensor has very wide application prospect in the technical field of future high resolution optoelectronics detection.
Description
Technical field
The present invention relates to a kind of photoconductive sensor spare, relate in particular to a kind of photoconductive sensor based on asymmetric different dimension structure.
Background technology
The photoelectric sensor that utilizes the design of macroscopic body material and make has been widely used in every field, as metal-metal hetero-junction, metal-semiconductor composite heterojunction, semiconductor-semiconductor composite heterojunction or the like.Documents and materials show that metal oxide nano-material has the optoelectronics performance of the excellence that is different from the macroscopic body material, belongs to the wide band gap semiconducter photoelectric functional material as titanium oxide, it is widely used in solar cell and the transducer, for example document [Kong XZ, Liu CX, DongW, Zhang XD, Tao C, Shen L, Zhou JR, Fei YF and Ruan SP, " Applied Physics wall bulletin " APPLIED PHYSICSLETTERS 2009,94:123502], [Xue HL, Kong XZ, Liu ZR, Liu CX, Zhou JR, Chen WY, RuanSP and Xu Q, " Applied Physics wall bulletin " APPLIED PHYSICS LETTERS 2007,90:201118], [Kang TS, SmithAP, Taylor BE and Durstock MF, " nanometer wall bulletin " NANO LETTERS 2009,9:601-606], [Mor GK, Shankar K, Paulose M, Varghese OK and Grimes CA, " nanometer wall bulletin " NANO LETTERS 2006,6,215-218] in relevant report is all arranged.But, (be about 3.0～3.2eV), so its spectral response wave band is at ultraviolet region because the band gap of titanium oxide is very wide.How utilizing the excellent properties of titanium dioxide nano material to design and develop out simple in structure but spectral response wave band, to extend to the novel photoelectric transducer of visible region be to be badly in need of the technical problem that solves at present.
Summary of the invention
The object of the present invention is to provide a kind of photoconductive sensor based on asymmetric different dimension structure, be intended to the special light electronics performance of utilizing asymmetric different dimension structure to be had, develop a kind of simple in structure, easy to make, its spectral response wave band can extend to visible region and the fast photoconductive sensor of response speed.
Technical scheme of the present invention is as follows:
A kind of photoconductive sensor based on asymmetric different dimension structure is characterized in that: this photoconductive sensor comprises electrically conducting transparent photoelectron emissions layer, photoelectric conversion layer, electronics receiving layer, top electrode lead-in wire and bottom electrode lead-in wire; Described electrically conducting transparent photoelectron emissions layer is as the top electrode of photoconductive sensor, the electronics receiving layer is as the bottom electrode of photoconductive sensor, described electrically conducting transparent photoelectron emissions layer adopts carbon nano-tube film, photoelectric conversion layer adopts titania nanotube array, and the electronics receiving layer adopts the titanium thin slice; The top electrode lead-in wire is connected regional carbon nano-tube film with carbon nano-tube film below, insulating barrier is set, titanium thin slice lower surface is connected with the bottom electrode lead-in wire.
It is the carbon nano-tube film of the low dimension of 1～10 nanometer that described carbon nano-tube film adopts diameter, it is the titania nanotube array of the medium dimension of 50～200 nanometers that described titania nanotube array adopts diameter, and it is the high-dimensional titanium thin slice of millimeter magnitude that described titanium thin slice adopts thickness.
Photoconductive sensor based on asymmetric different dimension structure provided by the present invention has advantages such as simple in structure, easy to make.Because this device has the spectral response range of broad, photoelectric response speed and bigger photoconductive rate of change faster, promptly has higher photoelectric respone sensitivity, therefore, this device has very wide application prospect in the high-resolution optoelectronics Detection Techniques field in future.
Description of drawings
Fig. 1 is the structural representation of the photoconductive sensor based on asymmetric different dimension structure provided by the invention.
Fig. 2 is the principle schematic of the photoconductive sensor based on asymmetric different dimension structure provided by the invention.
Fig. 3 is the scanning electron microscope image end view of titania nanotube array used in the present invention.
Fig. 4 is the scanning electron microscope image vertical view of the titania nanotube array upper surface of bedding carbon nano-tube film used in the present invention.
Fig. 5 is that during 340 nano wave length rayed, photic resistance variations is to the response curve of time among the photoconductive sensor embodiment based on asymmetric different dimension structure provided by the invention.
Fig. 6 is that during 532 nano wave length rayed, photic resistance variations is to the response curve of time among the photoconductive sensor embodiment based on asymmetric different dimension structure provided by the invention.
Among the figure: 1-titanium thin slice; The 2-titania nanotube array; The 3-carbon nano-tube film; The 4-insulating barrier; 5-top electrode lead-in wire; 6-bottom electrode lead-in wire.
Embodiment
Fig. 1 is the structural representation of the photoconductive sensor based on asymmetric different dimension structure provided by the invention.
This photoconductive sensor comprises electrically conducting transparent photoelectron emissions layer, photoelectric conversion layer, electronics receiving layer, top electrode lead-in wire and bottom electrode lead-in wire; Described electrically conducting transparent photoelectron emissions layer is as the top electrode of photoconductive sensor, the electronics receiving layer is as the bottom electrode of photoconductive sensor, described electrically conducting transparent photoelectron emissions layer adopts carbon nano-tube film 3, photoelectric conversion layer adopts titania nanotube array 2, and the electronics receiving layer adopts titanium thin slice 1; Top electrode lead-in wire 5 is connected the carbon nano-tube film in zone with carbon nano-tube film 3 below insulating barrier 4 is set, titanium thin slice lower surface and bottom electrode are gone between 6 to be connected.The film that the carbon nano-tube that described carbon nano-tube film 3 employing diameters are the low dimension of 1～10 nanometer constitutes, the array that the titanium oxide nanotubes that described titania nanotube array employing diameter is the medium dimension of 50～200 nanometers constitutes, it is the high-dimensional titanium thin slice of millimeter magnitude that described titanium thin slice adopts thickness.Upper surface to lower surface from transducer has constituted the photoconductive sensor spare that has unsymmetric structure in dimension by low dimension carbon nano-tube material, medium dimension TiOx nano tube material and high-dimensional body material titanium thin slice successively like this.
Fig. 2 is the principle schematic of the photoconductive sensor based on asymmetric different dimension structure provided by the invention.During work, two contact conductors up and down are connected with electrical signal detection equipment, when light beam irradiates is on the low-dimensional carbon nano-tube, photon excitation carbon nano tube surface electronics, this electronics breaks away from the constraint emission of carbon nano tube surface and is injected in the adjacent titanium oxide nanotubes with medium dimension under the photon effect, and then causing the charge carrier number in the titanium oxide nanotubes to increase, its electricity is led marked change can be taken place.This photoconductive numerical value depends on incident intensity, promptly when light intensity increases, photoconduction numerical value can increase, otherwise, when light intensity reduces, photoconduction numerical value also can reduce, and the spectral response wave band of this photoconductive device depends on the spectral response wave band of carbon nano-tube, but from ultraviolet light zone broadening to the visible region.
Enumerate a specific embodiment below and further specify the present invention.
At present, the mature technology of synthetic preparation carbon nano-tube and titanium oxide nanotubes is varied, about the technology of preparing of used carbon nano-tube of the embodiment of the invention and titanium oxide nanotubes at document [Wei JQ, Jiang B, Wu DH and Wei BQ, JOURNALOF PHYSICAL CHEMISTRY B 2004,108:8844-8847] and [Shankar K, Mor GK, Prakasam HE, YoriyaS, Paulose M, Varghese OK, Grimes CA, Nanotechnology 2007,18:065707] middle report.Titanium oxide nanotubes and carbon nano-tube also can directly be bought by the commercial channel.Electron scanning micrograph as shown in Figure 3 shows that the titanium oxide nanotubes orientation is relatively more consistent, and the diameter of titanium oxide nanotubes is in 50～200 nanometer range.Electron scanning micrograph (as shown in Figure 4) behind the top of titania nanotube array 2 bedding carbon nano-tube film 3 shows: the carbon nano-tube diameter is in 1～10 nanometer range, the diameter of titanium oxide nanotubes is in 50～200 nanometer range, it is the titanium thin slice of millimeter magnitude that the titanium thin slice adopts thickness, is connected to form the loop with two contact conductors and electrical signal detection equipment (K2400 type measurement source table) about the lead handle.Carbon nano-tube film is sparse and transparent, help optical transmission, utilizing spectrometer to isolate peak wavelength from the xenon lamp spectrum of 500 watts of power is 340 nanometers, the light beam irradiates of spectrum width 8 nanometers is when the carbon nano-tube film of photoconductive sensor, can produce significant photic resistance variations (as shown in Figure 5) in the loop, promptly open light source and 3 of resistance variations more than the order of magnitude when closing light source, and the photoelectric response speed of this photoconductive sensor is very fast.Then, we change light source, adopting wavelength is that 532 nanometers, power are that the laser beam irradiation of 150 milliwatts is when the carbon nano-tube film of photoconductive sensor, also can produce significant photic resistance variations (as shown in Figure 6) in the loop, resistance variations also reaches 3 more than the order of magnitude when promptly opening light source and closing light source, and the photoelectric response speed of this photoconductive sensor is very fast.Experiment test is the result show: no matter ultraviolet light (340 nano wave length), still visible light (532 nano wave length) shine the present invention relates to based on the photoconductive sensor of asymmetric different dimension structure the time, electricity is led (or resistance) numerical value and all marked change can be taken place in the circuit, its spectral response range can be widened the visible region from the ultraviolet light zone, and its photoelectric response speed is very fast.
Claims (2)
1. photoconductive sensor based on asymmetric different dimension structure is characterized in that: this photoconductive sensor comprises electrically conducting transparent photoelectron emissions layer, photoelectric conversion layer, electronics receiving layer, top electrode lead-in wire and bottom electrode lead-in wire; Described electrically conducting transparent photoelectron emissions layer is as the top electrode of photoconductive sensor, the electronics receiving layer is as the bottom electrode of photoconductive sensor, described electrically conducting transparent photoelectron emissions layer adopts carbon nano-tube film (3), photoelectric conversion layer adopts titania nanotube array (2), and the electronics receiving layer adopts titanium thin slice (1); The carbon nano-tube film below that is connected regional with carbon nano-tube film (3) at top electrode lead-in wire (5) is provided with insulating barrier (4), and titanium thin slice lower surface and bottom electrode lead-in wire (6) are connected.
2. according to the described a kind of photoconductive sensor of claim 1 based on asymmetric different dimension structure, it is characterized in that: it is the carbon nano-tube film of the low dimension of 1～10 nanometer that described carbon nano-tube film adopts diameter, it is the titania nanotube array of the medium dimension of 50～200 nanometers that described titania nanotube array adopts diameter, and it is the high-dimensional titanium thin slice of millimeter magnitude that described titanium thin slice adopts thickness.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694051A (en) * | 2012-06-04 | 2012-09-26 | 清华大学 | Photoelectric detector based on dual-photoelectric conversion layer different-dimension heterostructure |
| CN102856423A (en) * | 2012-09-19 | 2013-01-02 | 合肥工业大学 | Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof |
| CN106129170A (en) * | 2016-06-28 | 2016-11-16 | 兰建龙 | A kind of ultraviolet light detector and preparation method thereof |
| CN113299834A (en) * | 2021-05-18 | 2021-08-24 | 西北工业大学 | Self-driven broadband photoelectric detector based on nanotube composite structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100395172C (en) * | 2004-12-24 | 2008-06-18 | 清华大学 | Negative light control conductive device based on macroscopical long single-wall or double-wall nano tube bundle |
| CN100356149C (en) * | 2005-01-14 | 2007-12-19 | 清华大学 | Photoelectric sensor and imager probe for multi-wall carbon nano-tube bundle and metal heterojunction |
| CN101157521B (en) * | 2007-09-20 | 2011-05-04 | 复旦大学 | Visible light active nano titania composite film material and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102694051A (en) * | 2012-06-04 | 2012-09-26 | 清华大学 | Photoelectric detector based on dual-photoelectric conversion layer different-dimension heterostructure |
| CN102694051B (en) * | 2012-06-04 | 2014-12-24 | 清华大学 | Photoelectric detector based on dual-photoelectric conversion layer different-dimension heterostructure |
| CN102856423A (en) * | 2012-09-19 | 2013-01-02 | 合肥工业大学 | Ultraviolet light detector with titanium dioxide nanotube array serving as matrix and preparation method thereof |
| CN106129170A (en) * | 2016-06-28 | 2016-11-16 | 兰建龙 | A kind of ultraviolet light detector and preparation method thereof |
| CN113299834A (en) * | 2021-05-18 | 2021-08-24 | 西北工业大学 | Self-driven broadband photoelectric detector based on nanotube composite structure |
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