CN106129170A - A kind of ultraviolet light detector and preparation method thereof - Google Patents
A kind of ultraviolet light detector and preparation method thereof Download PDFInfo
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- CN106129170A CN106129170A CN201610505300.4A CN201610505300A CN106129170A CN 106129170 A CN106129170 A CN 106129170A CN 201610505300 A CN201610505300 A CN 201610505300A CN 106129170 A CN106129170 A CN 106129170A
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- disamarium trioxide
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- 238000002360 preparation method Methods 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims abstract description 53
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000002096 quantum dot Substances 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 4
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical group [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229940075630 samarium oxide Drugs 0.000 claims description 6
- 229910001954 samarium oxide Inorganic materials 0.000 claims description 6
- 238000002604 ultrasonography Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 229950000845 politef Drugs 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 230000036211 photosensitivity Effects 0.000 claims description 2
- BHXBZLPMVFUQBQ-UHFFFAOYSA-K samarium(iii) chloride Chemical compound Cl[Sm](Cl)Cl BHXBZLPMVFUQBQ-UHFFFAOYSA-K 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000006701 autoxidation reaction Methods 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 7
- 229910052772 Samarium Inorganic materials 0.000 abstract description 3
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 238000011084 recovery Methods 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 abstract description 3
- 230000006698 induction Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000825 ultraviolet detection Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 206010048768 Dermatosis Diseases 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 208000017520 skin disease Diseases 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 210000003743 erythrocyte Anatomy 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000000265 leukocyte Anatomy 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 210000004940 nucleus Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 231100000915 pathological change Toxicity 0.000 description 1
- 230000036285 pathological change Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses the high-performance ultraviolet detector of the n n homotype heterojunction material of a kind of nano oxidized samarium nanometer stick array and n-type silicon substrate formation.In n-type silicon substrate, Disamarium trioxide nanodot films is grown first with sputtering method；Then Disamarium trioxide nanometer stick array is generated by hydro-thermal method method induction Seed Layer；Transparent metal layer electrode film is prepared finally by magnetron sputtering method.The present invention utilize prepared by Disamarium trioxide nanometer stick array/silicon heterogenous enlarge-effect that Disamarium trioxide nanometer stick array/silicon heterogenous ultraviolet light detector has technique is simple, with low cost, without heater, can at room temperature work, and it is low to have power consumption, highly sensitive, response, short feature recovery time, ultraviolet light is had good detection performance, there is important application prospect.
Description
Technical field
The present invention relates to ultraviolet light detector field, be specifically related to a kind of based on Disamarium trioxide nanometer stick array/silicon heterogenous
Ultraviolet light detector and preparation method thereof.
Background technology
Ultraviolet detection technology is one of the research hot topic in photodetection field in recent years.It is the laser, infrared and visible of continuing
The emerging Detection Techniques of another door beyond optical detection.Ultraviolet detection has requirement background widely in dual-use field, can answer
Lead to chemical analysis, industrial detection, astronomical science research, emitter calibration, flame detecting, photoelectronic warfare, ultraviolet for biological
Multiple fields such as letter [Long Weigang. the progress [J] of all solid state highly sensitive ultraviolet detector technology. semiconductor optoelectronic, 2014,
35(5).].It is widely used at military, medical treatment, scientific research and other industrial circles.Such as, ultraviolet detection technology is doctor
Learn, aspect biology also has a wide range of applications, and has the application effect of uniqueness the most in recent years in terms of dermatosis diagnosis.
Utilize ultraviolet detection technology can be immediately seen pathological changes details when checkout and diagnosis dermatosis.Also cancerous cell, micro-can be detected with it
Biology, hematochrome, erythrocyte, leukocyte, nucleus etc., this detection not only rapidly, accurately, and intuitively, clear.The most
Put into the ultraviolet detection device of business and Military Application mainly based on silica-based ultraviolet phototube and ultravioplet photomultiplier, it
Although there being highly sensitive advantage, but equally exist need additive filter, volume big, easily damaged, need to be relatively low at high voltage
At a temperature of the shortcoming such as work, this most significantly constrains it and further applies.
Solid violet external detector can be divided into again broad stopband ultraviolet detector and silica-based ultraviolet detector two class.Silicon
Base semiconductor material has the technology of preparing of comparative maturity, and preparation technology is the most perfect, therefore silica-base material oneself become system
Make the topmost material of ultraviolet detector.The volume utilizing the silica-based ultraviolet detector that silicon-based semiconductor material manufactures is general the most relatively
Little, lighter in weight, and without complicated circuit, substantially increase the scope of application of ultraviolet detector, but due to its major part
Energy gap is narrower, also absorbs visible ray in addition to absorbing ultraviolet light.Corresponding with silicon-based semiconductor also has a kind of broad stopband
Ultraviolet detector, such sensor only absorbs a width for ultraviolet light using semi-conducting material as ultraviolet-sensitive material, main utilization
The features such as the electronics drift saturated velocity of forbidden band material is high, dielectric constant is little, energy gap is big, these features are applicable to make height
Frequently, detector high-power, radiation-resistant, make the ultraviolet detector of broad stopband thin film the most step and gone up Industrialization.It is true that
Although the samarium oxide film of conventional size belongs to the quasiconductor of broad stopband, but this material is when accepting ultraviolet and irradiating, its
Absorb ultraviolet ability at a fairly low under, the samarium oxide film being under nanoscale is the most entirely different, this material exhibitions
At a relatively high ultraviolet absorption ability is shown.In addition, the samarium oxide film ruggedness of this nanoscale is fine, in making
Time technological process the most relatively easy.
In the present invention, we utilize the enlarge-effect of the catalytic effect of palladium film and Disamarium trioxide nanometer stick array/silicon heterogenous,
Have developed a kind of palladium/Disamarium trioxide nanometer stick array/silicon dissimilar materials with ultraviolet-sensitive characteristic, Disamarium trioxide can be made purple
Outer photosensitivity is greatly improved.Disamarium trioxide nanometer stick array/silicon heterogenous utilizes Disamarium trioxide nanometer stick array/silicon heterogenous putting
Big effect, improves the responsiveness of device, and device performance is significantly improved.Therefore, Disamarium trioxide nanometer stick array/silicon heterogenous
The application prospect of uniqueness is demonstrated in terms of ultraviolet detector making.
Summary of the invention
It is an object of the present invention to provide a kind of based on Disamarium trioxide nanometer stick array/silicon heterogenous ultraviolet light detector and system thereof
Preparation Method.
The present invention uses has n-type silicon that silicon dioxide covers as substrate, using Disamarium trioxide nanometer stick array as matrix material
Material preparation ultraviolet light detector, make use of the enlarge-effect of Disamarium trioxide nanometer rods and the hetero-junctions of silicon.The present invention uses simultaneously
Technique is simple, room temperature condition detection and with semiconductor planar process compatible, be easily integrated, be suitable to produce in enormous quantities, thus tool
There is important using value.
The ultraviolet light detector of the present invention includes retaining the n-type silicon substrate of silicon dioxide oxide layer, profit the most successively
Grow Disamarium trioxide point thin film with spin coating method on a silicon substrate, generate Disamarium trioxide nanometer rods by hydro-thermal method method induction Seed Layer
Array, prepared transparent metal layer electrode film (can be palladium, copper etc.) by magnetron sputtering method.On transparent metal layer electrode film
Indium point electrode and indium electrode layer are-2 volts respectively as positive and negative electrode, extracting power supply cord, the voltage of power supply；Wherein cover two
The Si-Substrate Thickness of silicon oxide is 0.5～2 millimeter, and the thickness of Disamarium trioxide nano-stick array thin film is 100-600 nanometer, preferably
600 nanometers, the thickness of metal level is 10～30 nanometer, preferably 15nm.
Of the present invention based on Disamarium trioxide nanometer stick array/silicon heterogenous ultraviolet light detector and preparation method thereof, its
Preparation process is as follows:
(1) process of n-type silicon substrate
First in ultrasound wave, n-type silicon substrate 10～20 minutes are cleaned, then with acetone in ultrasound wave with deionized water
Clean n-type silicon substrate 10～20 minutes, the most again with washes of absolute alcohol n-type silicon substrate 10～20 minutes；After drying, again weigh
Go up cleaning process again.
(2) preparation of Disamarium trioxide nano-stick array thin film
Cleaned type n silicon base is put into spin coating instrument, carries out under the background being continually fed into nitrogen after evacuation
Spin coating, during spin coating, rotating speed is 5000～10000 revolution per seconds, and spin-coating time is 40～60 seconds, obtains samarium oxide film；To prepare
Disamarium trioxide nano thin-film/silicon chip put in tube type resistance furnace and to anneal in temperature is 800 degrees Celsius of lower nitrogen atmospheres, temperature
Climbing speed is 4 centigrade per minutes, keeps 2 hours to when 800 degrees Celsius, obtains Disamarium trioxide nanodot films/silicon heterogenous；
Disamarium trioxide nanodot films/silicon chip after annealing is put into and fills concentrated hydrochloric acid (mass fraction is 36.5%-38%) and chlorination
Carrying out hydro-thermal inductive formation Disamarium trioxide nanometer stick array in the politef reactor of samarium (ratio is 30:1), ambient temperature is
120～160 degrees Celsius, the hydro-thermal time is 0.5～2 hour, obtains Disamarium trioxide nanometer stick array/silicon heterogenous.
(3) preparation of transparent metal layer electrode film
On the basis of step (two), the Disamarium trioxide prepared nanometer stick array/silicon n silicon base is put into sputtering chamber, profit
Sputtering chamber is made to be in vacuum state by pumped vacuum systems, until background vacuum reaches target vacuum 0.5～2.5 × 10-4 handkerchief；
On the premise of maintaining 3 handkerchief pressure, being passed through argon in sputtering chamber, after stable gas pressure, start metallic target sputtering, its palladium target is pure
Degree is 99.9% (mass fraction), and sputtering DC voltage, sputtering DC current and sputtering time are respectively 0.26 kilovolt, 0.20 peace
Train and 1～3 minute；Make background vacuum reach 1 × 10-4～2 × 10-4 handkerchief again with pumped vacuum systems, after 2 hours, take out
Sample.
So can be obtained Disamarium trioxide nanometer stick array/Si heterojunction material by said process, this material is to 365nm ultraviolet
There is sensitlzing effect.Such as, Disamarium trioxide nanometer stick array/silicon heterogenous is from unglazed to when having light to change, and curent change is relatively big, table
Reveal good UV light sensitivity；Under backward voltage, this hetero-junctions photocurrent variations under different uv powers is obvious,
And along with the increase of luminous power, photoelectric current increases, when backward voltage is more than 2 volts, photoelectric current tends towards stability；At backward voltage
When 2 volts, photoelectric current is maximum with the ratio of dark current, and response time and recovery time are all at 0.01 second；This hetero-junctions is purple at 365nm
Under outer light, photoelectric current, more than the photoelectric current under other wavelength monochromatic light, shows preferable ultraviolet-sensitive；This hetero-junctions exists
On-off ratio under ultraviolet light is 5700%, and more than the on-off ratio under other wavelength monochromatic light, this device shows preferable purple
Outer detection.
Disamarium trioxide nanometer stick array/Si heterojunction material provided by the present invention, can develop ultraviolet-sensitive device with it
Part, this device without heater, can at room temperature work, consume energy low, and technique is simple, highly sensitive, and response, recovery time are short.
Accompanying drawing explanation
The structural representation of Fig. 1 device of the present invention.
In figure: indium point electrode 1, transparent metal layer electrode film 2, Disamarium trioxide nano-stick array thin film 3, silicon dioxide layer 4,
N-type silicon substrate 5, indium electrode layer 6 and ammeter 7；
Detailed description of the invention
Embodiment 1:
We have chosen N-shaped monocrystalline silicon piece that thickness is 0.5 millimeter as substrate, retains its natural oxidizing layer.Spend from
Sub-water is cleaning silicon chip 15 minutes in ultrasound wave, then with acetone cleaning silicon chip 20 hours in ultrasound wave, the most again with anhydrous
Ethanol purge silicon chip 20 minutes.After drying, again repeat above-mentioned cleaning process.
Cleaned n-type silicon substrate being dried up puts in spin coating room, carries out Disamarium trioxide under the background being continually fed into nitrogen
The spin coating of Seed Layer, puts into after spin coating in the drying baker of 60 degrees Celsius and stands 20 minutes.The oxygen that spin-coated method is prepared
Change samarium nano thin-film/silicon chip is put in tube type resistance furnace and is annealed in temperature is 800 degrees Celsius of lower nitrogen atmospheres, heats up
Speed is 4 centigrade per minutes, keeps 2h under 800 degrees Celsius.Disamarium trioxide nano thin-film/silicon chip after annealing is put into
The politef of the mixed solution (ratio is 30:1) filling concentrated hydrochloric acid (mass fraction is 36.5%-38%) and samarium trichloride is anti-
Answering and carry out hydro-thermal inductive formation Disamarium trioxide nanometer stick array in still, ambient temperature is 160 degrees Celsius, and the hydro-thermal time is 2 hours.
Mask and direct current magnetron sputtering process is utilized to prepare palladium metal layer: when background vacuum is 0.5～2.5 × 10-4During handkerchief, logical
Enter argon, and maintain the pressure of 3 handkerchiefs, after stable gas pressure, start to sputter for (mass fraction) 99.9% palladium target by purity, sputtering
DC voltage is 0.26 kilovolt, and sputtering DC current is 0.20 ampere, and sputtering time is 2 minutes, and base reservoir temperature is room temperature.Sputtering
After, stopping logical argon, pumped vacuum systems works on, and making sample is 1.5 × 10 in vacuum-42 are kept in the environment of handkerchief
Hour, then take out sample.Thickness 15 nanometer of palladium metal layer film 5；Silicon chip and the area of Disamarium trioxide nano-stick array thin film
Being 1 cm x 1 centimetre, the area of palladium membranes is 0.5 cm x 0.5 centimetre.
Indium point electrode 1 and indium electrode layer 6 on transparent metal layer electrode film 2 are connected respectively as positive and negative electrode, series connection
Keithley digital sourcemeter 2602B7, the voltage of power supply is-2 volts.So, one has Disamarium trioxide nanometer stick array/silicon heterogenous
Ultraviolet light detector prepare complete, its structure is as shown in Figure 1.
The above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (7)
1. a ultraviolet light detector, wherein, uses the Disamarium trioxide/Si heterojunction material with ultraviolet-sensitive, agent structure
It is Disamarium trioxide nano-stick array thin film (3) and n-n homotype hetero-junctions that n-type silicon substrate (5) is formed；Wherein, n-type silicon substrate (5)
The silicon dioxide layer (4) of upper reservation autoxidation, Disamarium trioxide nanometer stick array surface is coated with transparent metal layer electrode film (2)；
Indium point electrode (1) is prepared on transparent metal layer electrode film (2), upper relative with silicon dioxide layer (4) in n-type silicon substrate (5)
Indium metal layer (6) is formed as another electrode on one side surface；
Connect anelectrode indium point electrode (1) and negative electrode indium metal layer (6)；Voltage is-2 volts；
Disamarium trioxide nanometer stick array/silicon heterogenous is from unglazed to when having light to change, and curent change is relatively big, shows good purple
Outer photosensitivity；Under backward voltage, this hetero-junctions photocurrent variations under different uv powers is obvious, and along with luminous power
Increasing, photoelectric current increases.
2. ultraviolet light detector as claimed in claim 1,
It is characterized in that: the thickness of Disamarium trioxide nano-stick array thin film (3) is 100-600 nanometer, transparent metal layer electrode film
(2) thickness is 10～30 nanometers, and the thickness of n-type silicon substrate (5) is 0.5-2 millimeter, and the resistivity of n-type silicon substrate (5) is 1-3
Ohmcm.
3. ultraviolet light detector as claimed in claim 1,
It is characterized in that: opaque metal electrode layer can be palladium, copper etc.；Indium electrode can be aluminum, stannum etc.；Indium point electrode is just
Pole, indium metal layer is negative pole.
4. the preparation method of a ultraviolet light detector as claimed in claim 1, it is characterised in that its preparation methods steps is such as
Under:
(1) first with deionized water cleaning silicon chip 10～20 minutes in ultrasound wave, then in ultrasound wave, silicon is cleaned with acetone
Sheet 10～20 minutes, the most again with washes of absolute alcohol silicon chip 10～20 minutes；After drying, again repeat upper cleaning process；
(2) cleaned type n silicon base is put into spin coating instrument, revolve under the background being continually fed into nitrogen after evacuation
Being coated with, during spin coating, rotating speed is 5000～10000 revolution per seconds, and spin-coating time is 40～60 seconds, obtains samarium oxide film；
(3) being put into by the Disamarium trioxide prepared nano thin-film/silicon chip in tube type resistance furnace in temperature is 800 degrees Celsius of lower nitrogen
Annealing in atmosphere, temperature rate-of-rise is 4 centigrade per minutes, keeps 2 hours to when 800 degrees Celsius, obtains Disamarium trioxide nanometer
Point thin film/silicon heterogenous；
(4) the Disamarium trioxide nanodot films/silicon chip after annealing is put into and is filled concentrated hydrochloric acid (mass fraction is 36.5%-38%)
With the politef reactor of samarium trichloride (ratio is 30:1) carries out hydro-thermal inductive formation Disamarium trioxide nanometer stick array, background
Temperature is 120～160 degrees Celsius, and the hydro-thermal time is 0.5～2 hour, obtains Disamarium trioxide nanometer stick array/silicon heterogenous；
(5) Disamarium trioxide prepared nanometer stick array/silicon chip is put into sputtering chamber, utilize pumped vacuum systems to make sputtering chamber be in
Vacuum state, until background vacuum reaches target vacuum 0.5～2.5 × 10-4Handkerchief；
(6) on the premise of maintaining 3 handkerchief pressure, in sputtering chamber, it is passed through argon, after stable gas pressure, starts Metal Palladium sputtering,
Its palladium target purity is 99.9% (mass fraction), and sputtering DC voltage, sputtering DC current and sputtering time are respectively 0.26 thousand
Volt, 0.20 ampere and 1～3 minute；Background vacuum is made to reach 1 × 10 again with pumped vacuum systems-4～2 × 10-4Handkerchief, 2 hours
After, take out sample.
5. preparation method as claimed in claim 4, it is characterised in that: the Disamarium trioxide nanodot films described in step (3) is
Samarium oxide film is utilized to form through 800 degrees Celsius of annealing.
6. preparation method as claimed in claim 4, it is characterised in that: the Disamarium trioxide nanometer stick array (3) described in step (4)
Hydro-thermal method is utilized to be prepared from.
7. preparation method as claimed in claim 4, it is characterised in that: transparent metal layer electrode film (2) in step (6) is
At ambient temperature.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108303122A (en) * | 2017-01-11 | 2018-07-20 | 中国科学院上海微***与信息技术研究所 | The bionical optical detector of graphene and preparation method thereof based on thermoregulation energy |
| CN111192963A (en) * | 2020-01-22 | 2020-05-22 | 华南理工大学 | Self-powered ultraviolet detection film with ZnO-based sandwich structure and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101794837A (en) * | 2010-02-05 | 2010-08-04 | 清华大学 | Photoconductive sensor based on asymmetric different dimensionalities structures |
| WO2010120196A1 (en) * | 2009-04-14 | 2010-10-21 | Institute Of Geological And Nuclear Sciences Limited | Zinc oxide nanostructures and sensors using zinc oxide nanostructures |
| CN104934501A (en) * | 2015-05-30 | 2015-09-23 | 浙江理工大学 | Preparation method for ultraviolet photoelectric device based on Sm2O3/n-Si heterostructure |
| CN105489695A (en) * | 2016-01-14 | 2016-04-13 | 中国石油大学(华东) | Titanium dioxide porous membrane/silicon n-n heterojunction-based ultraviolet detector and preparation method thereof |
| CN105514210A (en) * | 2016-01-14 | 2016-04-20 | 中国石油大学(华东) | Titanium dioxide nanorod array/silicon heterojunction-based ultraviolet light detector and preparation method thereof |
-
2016
- 2016-06-28 CN CN201610505300.4A patent/CN106129170A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010120196A1 (en) * | 2009-04-14 | 2010-10-21 | Institute Of Geological And Nuclear Sciences Limited | Zinc oxide nanostructures and sensors using zinc oxide nanostructures |
| CN101794837A (en) * | 2010-02-05 | 2010-08-04 | 清华大学 | Photoconductive sensor based on asymmetric different dimensionalities structures |
| CN104934501A (en) * | 2015-05-30 | 2015-09-23 | 浙江理工大学 | Preparation method for ultraviolet photoelectric device based on Sm2O3/n-Si heterostructure |
| CN105489695A (en) * | 2016-01-14 | 2016-04-13 | 中国石油大学(华东) | Titanium dioxide porous membrane/silicon n-n heterojunction-based ultraviolet detector and preparation method thereof |
| CN105514210A (en) * | 2016-01-14 | 2016-04-20 | 中国石油大学(华东) | Titanium dioxide nanorod array/silicon heterojunction-based ultraviolet light detector and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108303122A (en) * | 2017-01-11 | 2018-07-20 | 中国科学院上海微***与信息技术研究所 | The bionical optical detector of graphene and preparation method thereof based on thermoregulation energy |
| CN111192963A (en) * | 2020-01-22 | 2020-05-22 | 华南理工大学 | Self-powered ultraviolet detection film with ZnO-based sandwich structure and preparation method thereof |
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