CN102694051A - Photoelectric detector based on dual-photoelectric conversion layer different-dimension heterostructure - Google Patents
Photoelectric detector based on dual-photoelectric conversion layer different-dimension heterostructure Download PDFInfo
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- CN102694051A CN102694051A CN2012101826147A CN201210182614A CN102694051A CN 102694051 A CN102694051 A CN 102694051A CN 2012101826147 A CN2012101826147 A CN 2012101826147A CN 201210182614 A CN201210182614 A CN 201210182614A CN 102694051 A CN102694051 A CN 102694051A
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Abstract
The invention discloses a photoelectric detector based on a dual-photoelectric conversion layer different-dimension heterostructure in the technical field of photoelectric detector design. The photoelectric detector comprises an upper electrode lead, a transparent conductive photoelectron emission layer, an insulation layer, a dual-photoelectric conversion layer, an electronic receiving layer and a lower electrode lead, wherein the transparent conductive photoelectron emission layer, the insulation layer, the dual-photoelectric conversion layer and the electronic receiving layer are sequentially distributed from top to bottom; the transparent conductive photoelectron emission layer adopts a carbon nanotube film; an upper layer of the dual-photoelectric conversion layer adopts a cuprous oxide nanoparticle film; an lower layer of the dual-photoelectric conversion layer adopts a titanium oxide nanotube array; a light-transmitted window is contained in the middle of the insulation layer; the carbon nanotube film is contacted with the cuprous oxide nanoparticle film by the light-transmitted window; the electronic receiving layer adopts a titanium slice; the upper electrode lead is connected with the contact region of the carbon nanotube film and the insulation layer; and the lower surface of the titanium slice is connected with the lower electrode lead. The photoelectric detector has higher photoelectric response sensitivity, a simple structure and convenience of manufacture.
Description
Technical field
The invention belongs to the photodetector design field, relate in particular to a kind of photodetector based on the different dimension heterostructure of two photoelectric conversion layers.
Background technology
The photodetector that utilizes macroscopical block materials design and make has been widely used in every field, like metal-metal hetero-junction, metal-semiconductor schottky junction, semiconductor-semiconductor composite heterojunction etc.Documents and materials show; The low dimension semiconductor material has the photoelectric properties of the uniqueness that is different from three-dimensional block materials; Like titanium oxide nanotubes as the one dimension photoelectric functional material; Be widely used in DSSC and quantum dot sensitized area of solar cell, in following document (1)-(4) relevant report arranged all.
(1) Gopal K.Mor, Karthik Shankar, Maggie Paulose, Oomman K.Varghese and Craig A.Grimes, " nanometer wall bulletin " NANO LETTERS 2006,6:215-218;
(2) Karthik Shankar, Jayasundera Bandara, Maggie Paulose; Helga Wietasch, Oomman K.Varghese, Gopal K.Mor; Thomas J.LaTempa; Mukundan Thelakkat and Craig A.Grimes, " nanometer wall bulletin " NANO LETTERS 2008,8:1654-1659;
(3) Yuh-Lang Lee and Yi-Siou Lo, " advanced function material " Advanced Functional Materials 2009,19:604-609;
(4) David R.Baker and Prashant V.Kamat, " advanced function material " Advanced Functional Materials 2009,19,805-811.
But, because titanium oxide is that (band gap is about 3.0～3.2eV) to wide bandgap semiconductor, so it only has response to ultraviolet light.The fast-response photodetector of how widening the spectral response zone of titanium oxide nanotubes and designing and developing based on titanium oxide nanotubes is a technical problem of being badly in need of solution at present.
Summary of the invention
The objective of the invention is to; A kind of photodetector based on the different dimension heterostructure of two photoelectric conversion layers is provided; The special light electrical property that utilizes two different dimension heterostructures of photoelectric conversion layer to be had is widened its spectral response to the visible region, and is improved its response speed.
For realizing above-mentioned purpose; Technical scheme provided by the invention is; A kind of photodetector based on the different dimension heterostructure of two photoelectric conversion layers is characterized in that said photodetector comprises top electrode lead-in wire, electrically conducting transparent photoelectron emissions layer, insulating barrier, two photoelectric conversion layer, electronics receiving layer and bottom electrode lead-in wire;
Said electrically conducting transparent photoelectron emissions layer, insulating barrier, two photoelectric conversion layer and electronics receiving layer are arranged from top to bottom successively;
Said electrically conducting transparent photoelectron emissions layer is the top electrode of photodetector, and the electronics receiving layer is the bottom electrode of photodetector;
Said electrically conducting transparent photoelectron emissions layer adopts carbon nano-tube film;
The cuprous oxide nano particle film is adopted on the upper strata of said pair of photoelectric conversion layer, and the lower floor of two photoelectric conversion layers adopts titania nanotube array;
An optical transmission window is contained at said insulating barrier middle part, and carbon nano-tube film contacts with the cuprous oxide nano particle film through said optical transmission window;
Said electronics receiving layer adopts the titanium thin slice;
Said top electrode lead-in wire links to each other with the contacted zone of carbon nano-tube film and insulating barrier;
Said titanium thin slice lower surface is connected with the bottom electrode lead-in wire.
The diameter of the CNT of said carbon nano-tube film is 1～10 nanometer.
The diameter of the cuprous oxide nano particle of said cuprous oxide nano particle film is 50～150 nanometers.
The diameter of the titanium oxide nanotubes of said titania nanotube array is 50～150 nanometers.
The thickness of said titanium thin slice is 0.2 millimeter.
Photodetector based on the different dimension heterostructure of two photoelectric conversion layers provided by the invention has the spectral response range of broad, photoelectric response speed and bigger light dark current ratio faster, and it is simple in structure, and is easy to make.
Description of drawings
Fig. 1 is the photodetector structure cutaway view based on the different dimension heterostructure of two photoelectric conversion layers provided by the invention;
Fig. 2 is the insulating barrier vertical view of the photodetector based on the different dimension heterostructure of two photoelectric conversion layers provided by the invention;
Fig. 3 is the scanning electron microscope image end view of the titania nanotube array of the cuprous nano particle of top capping oxidation used in the present invention;
Fig. 4 is the scanning electron microscope image vertical view of cuprous oxide nano particle film used in the present invention;
Fig. 5 is the diameter Distribution figure of cuprous oxide nano particle;
Fig. 6 is the absorption spectra sketch map of carbon nano-tube film/titania nanotube array heterostructure and carbon nano-tube film/cuprous oxide nano particle/titania nanotube array heterostructure;
When Fig. 7 was to use 405 nano wave length rayed photodetector provided by the invention, photic electric current changed the response curve to the time;
When Fig. 8 was to use 532 nano wave length rayed photodetector provided by the invention, photic electric current changed the response curve to the time;
Among the figure: 1-titanium thin slice, 2-titania nanotube array, 3-cuprous oxide nano particle, 4-insulating barrier, 5-carbon nano-tube film, 6-top electrode lead-in wire, 7-bottom electrode lead-in wire, 8-optical transmission window.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment is elaborated.Should be emphasized that following explanation only is exemplary, rather than in order to limit scope of the present invention and application thereof.
Fig. 1 is the photodetector structure cutaway view based on the different dimension heterostructure of two photoelectric conversion layers provided by the invention.Among Fig. 1, the photodetector based on the different dimension heterostructure of two photoelectric conversion layers provided by the invention comprises electrically conducting transparent photoelectron emissions layer, two photoelectric conversion layer, electronics receiving layer, top electrode lead-in wire and bottom electrode lead-in wire.Electrically conducting transparent photoelectron emissions layer, insulating barrier, two photoelectric conversion layer and electronics receiving layer are arranged from top to bottom successively.Electrically conducting transparent photoelectron emissions layer is as the top electrode of photoconductive sensor, and the electronics receiving layer is as the bottom electrode of photodetector.Electrically conducting transparent photoelectron emissions layer adopts carbon nano-tube film 5, and cuprous oxide nano particle film 3 is adopted on the upper strata of two photoelectric conversion layers, and the lower floor of two photoelectric conversion layers adopts titania nanotube array 2, and the electronics receiving layer adopts titanium thin slice 1.
Fig. 2 is the insulating barrier vertical view of the photodetector based on the different dimension heterostructure of two photoelectric conversion layers provided by the invention.Among Fig. 2, an optical transmission window 8 (hollow region) is contained at the insulating barrier middle part, and carbon nano-tube film contacts with the cuprous oxide nano particle film through said optical transmission window 8.Top electrode lead-in wire 6 links to each other with insulating barrier 4 contacted zones with carbon nano-tube film 5.
It is the carbon nano-tube film of 1～10 nanometer that carbon nano-tube film adopts diameter; It is the cuprous oxide nano particle film of 50～150 nanometers that the cuprous oxide nano particle film adopts diameter; It is the titania nanotube array of 50～150 nanometers that titania nanotube array adopts diameter; It is the titanium thin slice of millimeter magnitude that the titanium thin slice adopts thickness, and generally selecting thickness for use is 0.2 millimeter titanium thin slice.Be that the carbon nano-tube film material of 1～10 nanometer, the cuprous oxide nano particle material that diameter is 50～150 nanometers, TiOx nano tube material and the block materials titanium thin slice that diameter is 50～150 nanometers have constituted the different dimension heterostructure of two photoelectric conversion layers photoelectric detector by diameter successively from upper surface to the lower surface of detector like this.In the present invention, the implication of " different dimension " is dimension (diameter) difference, and promptly the diameter of carbon nano-tube film is 1～10 nanometer, and the diameter of cuprous oxide nano particle is 50～150 nanometers, and the diameter of titanium oxide nanotubes is 50～150 nanometers.The implication of " heterogeneous " is that the material of lower floor of upper strata and two photoelectric conversion layers of photoelectron emissions layer, two photoelectric conversion layers is different, is respectively carbon nano-tube film, cuprous oxide nano particle film and titania nanotube array.
Characteristic below in conjunction with the instance explanation photodetector based on the different dimension heterostructure of two photoelectric conversion layers provided by the invention.Because the mature technology of synthetic preparation CNT, titanium oxide nanotubes and cuprous oxide nano particle is varied; Technology of preparing about the used CNT of the embodiment of the invention, titanium oxide nanotubes and cuprous oxide nano particle has report in following document, comprising:
（1）Wei?JQ,Jiang?B,Wu?DH?and?Wei?BQ,JOURNAL?OF?PHYSICAL?CHEMISTRY?B?2004,108：8844-8847；
（2）Shankar?K,Mor?GK,Prakasam?HE，Yoriya?S，Paulose?M，Varghese?OK，Grimes?CA，Nanotechnology?2007,18：065707；
（3）A.A.Aref,L.B.Xiong,N.N.Yan，A.M.Abdulkarem，Y.Yu，Mater.Chem.Phys.2011,127：433-439。
Therefore repeat no more for above-mentioned technology of preparing the present invention.In addition, cuprous oxide nano particle, titanium oxide nanotubes and CNT also can directly be bought through the commercial channel.
Fig. 3 is the scanning electron microscope image end view of the titania nanotube array of the cuprous nano particle of top capping oxidation used in the present invention.Electron scanning micrograph as shown in Figure 3 shows that the titanium oxide nanotubes orientation is relatively more consistent, and the diameter of titanium oxide nanotubes is coated with fine and close cuprous oxide nano particle film on the top of titanium oxide nanotubes in 50～150 nanometer range.
Fig. 4 and Fig. 5 are respectively the scanning electron microscope image vertical view of cuprous oxide nano particle film used in the present invention and the diameter Distribution figure of cuprous oxide nano particle.Show like Fig. 4 and electron scanning micrograph shown in Figure 5: the average diameter of cuprous oxide nano particle is about 120 nanometers.It is the titanium thin slice of millimeter magnitude that the titanium thin slice adopts thickness, is connected to form the loop with two contact conductors and electrical signal detection equipment (K2400 type measuring source table) about the lead handle.Carbon nano-tube film is sparse and transparent, helps optical transmission, thus make that cuprous oxide nano particle also can receive light excite the generation electron-hole pair.
Fig. 6 is the absorption spectra sketch map of carbon nano-tube film/titania nanotube array heterostructure and carbon nano-tube film/cuprous oxide nano particle/titania nanotube array heterostructure.Absorption spectra as shown in Figure 6 shows that in the visible region, the absorptivity of device significantly improves behind the cuprous nano particle of capping oxidation.Adopting wavelength is that 405 nanometers, power are the carbon nano-tube film of the laser beam irradiation photodetector upper surface of 12 milliwatts; Can produce significant photic electric current (as shown in Figure 7) in the loop; The electric current variation reaches more than 5 microamperes when promptly opening light source and closing light source, and the photoelectric response speed of this photodetector is exceedingly fast.Then; We change light source; Adopting wavelength is that 532 nanometers, power are that the laser beam irradiation of 300 milliwatts is when the carbon nano-tube film of photodetector upper surface; Also can produce significant photic electric current (as shown in Figure 8) in the loop, the electric current variation reaches more than 10 microamperes when promptly opening light source and closing light source, and the photoelectric response speed of this photodetector is exceedingly fast.Experiment test is the result show: visible light (405 nano wave lengths and 532 nano wave lengths) shine the present invention relates to based on the photodetector of the different dimension heterostructure of two photoelectric conversion layers the time; Marked change can take place in current values in the circuit; Explain that its spectral response range can widen to the visible region, and its photoelectric response speed is exceedingly fast.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (5)
1. the photodetector based on the different dimension heterostructure of two photoelectric conversion layers is characterized in that said photodetector comprises top electrode lead-in wire, electrically conducting transparent photoelectron emissions layer, insulating barrier, two photoelectric conversion layer, electronics receiving layer and bottom electrode lead-in wire;
Said electrically conducting transparent photoelectron emissions layer, insulating barrier, two photoelectric conversion layer and electronics receiving layer are arranged from top to bottom successively;
Said electrically conducting transparent photoelectron emissions layer is the top electrode of photodetector, and the electronics receiving layer is the bottom electrode of photodetector;
Said electrically conducting transparent photoelectron emissions layer adopts carbon nano-tube film;
The cuprous oxide nano particle film is adopted on the upper strata of said pair of photoelectric conversion layer, and the lower floor of two photoelectric conversion layers adopts titania nanotube array;
An optical transmission window is contained at said insulating barrier middle part, and carbon nano-tube film contacts with the cuprous oxide nano particle film through said optical transmission window;
Said electronics receiving layer adopts the titanium thin slice;
Said top electrode lead-in wire links to each other with the contacted zone of carbon nano-tube film and insulating barrier;
Said titanium thin slice lower surface is connected with the bottom electrode lead-in wire.
2. photodetector according to claim 1, the diameter that it is characterized in that the CNT of said carbon nano-tube film is 1～10 nanometer.
3. photodetector according to claim 1, the diameter that it is characterized in that the cuprous oxide nano particle of said cuprous oxide nano particle film is 50～150 nanometers.
4. photodetector according to claim 1, the diameter that it is characterized in that the titanium oxide nanotubes of said titania nanotube array is 50～150 nanometers.
5. photodetector according to claim 1, the thickness that it is characterized in that said titanium thin slice is 0.2 millimeter.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105182611A (en) * | 2015-10-23 | 2015-12-23 | 京东方科技集团股份有限公司 | Optical film, backlight module and display device |
| CN108963079A (en) * | 2017-05-17 | 2018-12-07 | 清华大学 | Optical detection device and photodetector |
| CN109244096A (en) * | 2018-09-20 | 2019-01-18 | 深圳先进技术研究院 | X-ray flat panel detector and preparation method thereof |
| CN113299834A (en) * | 2021-05-18 | 2021-08-24 | 西北工业大学 | Self-driven broadband photoelectric detector based on nanotube composite structure |
| TWI739274B (en) * | 2020-01-10 | 2021-09-11 | 國立清華大學 | Semiconductor heterojunction, field effect transistor and photodetector including the same |
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| CN101794837A (en) * | 2010-02-05 | 2010-08-04 | 清华大学 | Photoconductive sensor based on asymmetric different dimensionalities structures |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105182611A (en) * | 2015-10-23 | 2015-12-23 | 京东方科技集团股份有限公司 | Optical film, backlight module and display device |
| CN105182611B (en) * | 2015-10-23 | 2019-01-22 | 京东方科技集团股份有限公司 | A kind of optical diaphragm, backlight module and display device |
| CN108963079A (en) * | 2017-05-17 | 2018-12-07 | 清华大学 | Optical detection device and photodetector |
| CN108963079B (en) * | 2017-05-17 | 2020-03-17 | 清华大学 | Photodetector and photodetector |
| CN109244096A (en) * | 2018-09-20 | 2019-01-18 | 深圳先进技术研究院 | X-ray flat panel detector and preparation method thereof |
| CN109244096B (en) * | 2018-09-20 | 2020-07-24 | 深圳先进技术研究院 | X-ray flat panel detector and manufacturing method thereof |
| TWI739274B (en) * | 2020-01-10 | 2021-09-11 | 國立清華大學 | Semiconductor heterojunction, field effect transistor and photodetector including the same |
| CN113299834A (en) * | 2021-05-18 | 2021-08-24 | 西北工业大学 | Self-driven broadband photoelectric detector based on nanotube composite structure |
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