CN101775589A - Preparation method of surface conduction electron-emitter film with Nb-Si-N nanometer bi-phase structure - Google Patents
Preparation method of surface conduction electron-emitter film with Nb-Si-N nanometer bi-phase structure Download PDFInfo
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- CN101775589A CN101775589A CN 201010131891 CN201010131891A CN101775589A CN 101775589 A CN101775589 A CN 101775589A CN 201010131891 CN201010131891 CN 201010131891 CN 201010131891 A CN201010131891 A CN 201010131891A CN 101775589 A CN101775589 A CN 101775589A
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- surface conduction
- conduction electron
- electron emission
- phase structure
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Abstract
The invention relates to a surface conduction electron-emitter film material, and discloses a preparation method of a surface conduction electron-emitter film with an Nb-Si-N nanometer bi-phase structure. The preparation method comprises the following steps of: taking a glass as a substrate in the atmosphere of N2/Ar mixing gas, synchronously carrying out the reaction magnetron sputtering on an Nb target and a Si target for deposition and generating a surface conduction electron-emitter film with the Nb-Si-N nanometer bi-phase structure having an NbN conductive phase and a SiNx insulating phase.
Description
Technical field
The present invention relates to surface conduction electron emission film materials, particularly a kind of preparation method of Nb-Si-N nano double phase structure surface conduction electron emission film.
Background technology
Surface-conduction-electron emission display (Surface Conduction Electron-emitter Display, SED), belong to field emission and show that (its pictorial display performance is very outstanding in flat-panel display device at present for Field Emission Display, FED) a kind of.The video picture principle of SED and traditional cathode tube (CathodeRay Tube, CRT) similar, difference is that SED will scribble the sheet glass and the glass film plates laid parallel that is covered with exhibiting high surface conduction electron emissive source of fluorescent material, this structure makes the thickness of SED can do quite thinly, has also kept the advantage of CRT image and power consumption aspect simultaneously.
At present, the main surface conduction electron emission film that contains palladium (Pd) of using Canon to propose in the SED manufacturing technology, and palladium is a kind of noble metal, this material of a large amount of uses can make the cost of manufacture of SED higher.
Summary of the invention
The purpose of this invention is to provide a kind of preparation method with Nb-Si-N nano double phase structure surface conduction electron emission film of low-cost and high electronic transmitting efficiency, the surface conduction electron emission film materials of this method preparation is by NbN conductive phase and SiN
xInsulation two phase composites mutually, its stable electron emission characteristic can satisfy the requirement of SED to surface conduction electron emission film fully.
In order to achieve the above object, the present invention is achieved by the following technical solutions.
A kind of preparation method of Nb-Si-N nano double phase structure surface conduction electron emission film is characterized in that: at N
2In/Ar mixed gas the atmosphere, be matrix with glass, simultaneously Nb target and Si target carried out reaction magnetocontrol sputtering, deposition generates has NbN conductive phase and SiN
xThe Nb-Si-N nano double phase structure surface conduction electron emission film of insulation phase.
Further improvement of the present invention is:
Described N
2The air pressure of/Ar mixed gas is 0.1Pa, N
2Dividing potential drop is 0.01-0.03Pa.
Described reaction magnetocontrol sputtering adopts the pulse power or radio-frequency power supply, and matrix is applied the negative bias of 50-200V.
Adopt the surface conduction electron emission film of the Nb-Si-N nano double phase structure of the present invention's preparation, have NbN conductive phase and SiN
xThe double structure of insulation phase, and can adjust the ratio that exists of two-phase as required, thus easily change film rectangular resistance, satisfy the requirement of SED to surface conduction electron emission film.
Embodiment
Embodiment 1, at N
2In/Ar mixed gas the atmosphere, being matrix with glass, is Φ 75 * 6mm with diameter * thickness simultaneously
2Nb sheet and Si sheet carry out reaction magnetocontrol sputtering as sputtering target material, deposition generates the surface conduction electron emission film with Nb-Si-N nano double phase structure.Wherein, the Nb target adopts the pulse power, and sputtering power is 100W, and the Si target adopts radio-frequency power supply, and sputtering power is 50W, and matrix is applied the negative bias of 50V, sputter gas (N
2/ Ar mixed gas) total flux is 40sccm, sputtering pressure (N
2The air pressure of/Ar mixed gas) be 0.1Pa, N
2Dividing potential drop is 0.01Pa, and the Ar dividing potential drop is 0.09Pa, and depositing time is 10min, and deposit thickness is 100nm.
The Nb-Si-N nano double phase structure surface conduction electron emission film of present embodiment preparation, its electron emission current is 3.2uA, electronic transmitting efficiency is 1.4 ‰, and the good stability of transmitter current.
Embodiment 2, at N
2In/Ar mixed gas the atmosphere, being matrix with glass, is Φ 75 * 6mm with diameter * thickness simultaneously
2Nb sheet and Si sheet carry out reaction magnetocontrol sputtering as sputtering target material, deposition generates the surface conduction electron emission film with Nb-Si-N nano double phase structure.Wherein, the Nb target adopts the pulse power, and sputtering power is 100W, and the Si target adopts radio-frequency power supply, and sputtering power is 50W, and matrix is applied the negative bias of 50V, sputter gas (N
2/ Ar mixed gas) total flux is 40sccm, sputtering pressure (N
2The air pressure of/Ar mixed gas) be 0.1Pa, N
2Dividing potential drop is 0.03Pa, and the Ar dividing potential drop is 0.07Pa, and depositing time is 10min, and deposit thickness is 80nm.
The Nb-Si-N nano double phase structure surface conduction electron emission film of present embodiment preparation, its electron emission current is 2.8uA, electronic transmitting efficiency is 1.2 ‰, and the good stability of transmitter current.
Embodiment 3, at N
2In/Ar mixed gas the atmosphere, being matrix with glass, is Φ 75 * 6mm with diameter * thickness simultaneously
2Nb sheet and Si sheet carry out reaction magnetocontrol sputtering as sputtering target material, deposition generates the surface conduction electron emission film with Nb-Si-N nano double phase structure.Wherein, the Nb target adopts the pulse power, and sputtering power is 100W, and the Si target adopts radio-frequency power supply, and sputtering power is 50W, and matrix is applied the negative bias of 200V, sputter gas (N
2/ Ar mixed gas) total flux is 40sccm, sputtering pressure (N
2The air pressure of/Ar mixed gas) be 0.1Pa, N
2Dividing potential drop is 0.03Pa, and the Ar dividing potential drop is 0.07Pa, and depositing time is 10min, and deposit thickness is 80nm.
The Nb-Si-N nano double phase structure surface conduction electron emission film of present embodiment preparation, its electron emission current is 3.1uA, electronic transmitting efficiency is 1.3 ‰, and the good stability of transmitter current.
Embodiment 4, at N
2In/Ar mixed gas the atmosphere, being matrix with glass, is Φ 75 * 6mm with diameter * thickness simultaneously
2Nb sheet and Si sheet carry out reaction magnetocontrol sputtering as sputtering target material, deposition generates the surface conduction electron emission film with Nb-Si-N nano double phase structure.Wherein, Nb target sputtering power is 100W, and Si target sputtering power is 50W, and two targets all adopt the pulse power, and matrix is applied the negative bias of 100V, sputter gas (N
2/ Ar mixed gas) total flux is 40sccm, sputtering pressure (N
2The air pressure of/Ar mixed gas) be 0.1Pa, N
2Dividing potential drop is 0.01Pa, and the Ar dividing potential drop is 0.09Pa, and depositing time is 10min, and deposit thickness is 120nm.
The Nb-Si-N nano double phase structure surface conduction electron emission film of present embodiment preparation, its electron emission current is 3.6uA, electronic transmitting efficiency is 1.5 ‰, and the good stability of transmitter current.
Embodiment 5, at N
2In/Ar mixed gas the atmosphere, being matrix with glass, is Φ 75 * 6mm with diameter * thickness simultaneously
2Nb sheet and Si sheet carry out reaction magnetocontrol sputtering as sputtering target material, deposition generates the surface conduction electron emission film with Nb-Si-N nano double phase structure.Wherein, Nb target sputtering power is 100W, and Si target sputtering power is 40W, and two targets all adopt the pulse power, and matrix is applied the negative bias of 100V, sputter gas (N
2/ Ar mixed gas) total flux is 40sccm, sputtering pressure (N
2The air pressure of/Ar mixed gas) be 0.1Pa, N
2Dividing potential drop is 0.03Pa, and the Ar dividing potential drop is 0.07Pa, and depositing time is 10min, and deposit thickness is 100nm.
The Nb-Si-N nano double phase structure surface conduction electron emission film of present embodiment preparation, its electron emission current is 3.0uA, electronic transmitting efficiency is 1.3 ‰, and the good stability of transmitter current.
The Nb-Si-N conduction electron-emitter film film of the present invention's preparation is compared with existing PdO surface conduction electron emission film materials, under same experiment condition than the latter's surface conduction electron emission film electronic transmitting efficiency (1.0 ‰) height, high electron emission density is just arranged under little device current, have high electron emissivity; Have high stability simultaneously, can be for a long time emitting electrons repeatedly repeatedly.
Claims (3)
1. the preparation method of a Nb-Si-N nano double phase structure surface conduction electron emission film is characterized in that: at N
2In/Ar mixed gas the atmosphere, be matrix with glass, simultaneously Nb target and Si target carried out reaction magnetocontrol sputtering, deposition generates has NbN conductive phase and SiN
xThe Nb-Si-N nano double phase structure surface conduction electron emission film of insulation phase.
2. the preparation method of a kind of Nb-Si-N nano double phase structure surface conduction electron emission film according to claim 1 is characterized in that described N
2The air pressure of/Ar mixed gas is 0.1Pa, N
2Dividing potential drop is 0.01-0.03Pa.
3. the preparation method of a kind of Nb-Si-N nano double phase structure surface conduction electron emission film according to claim 1 is characterized in that, described reaction magnetocontrol sputtering adopts the radio-frequency power supply or the pulse power, and matrix is applied the negative bias of 50-200V.
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| CN 201010131891 CN101775589A (en) | 2010-03-25 | 2010-03-25 | Preparation method of surface conduction electron-emitter film with Nb-Si-N nanometer bi-phase structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010131891 CN101775589A (en) | 2010-03-25 | 2010-03-25 | Preparation method of surface conduction electron-emitter film with Nb-Si-N nanometer bi-phase structure |
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| CN101775589A true CN101775589A (en) | 2010-07-14 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377988A (en) * | 2002-01-10 | 2002-11-06 | 上海交通大学 | Super hard nano composite film and its producing process |
| US20040013899A1 (en) * | 2002-05-30 | 2004-01-22 | Yoshiyuki Abe | Target for transparent conductive thin film, transparent conductive thin film and manufacturing method thereof, electrode material for display, organic electroluminescence element and solar cell |
| CN101158026A (en) * | 2007-09-13 | 2008-04-09 | 南京大学 | Method for growing ultra-thin NbN superconducting film on MgO or Si substrate |
| CN101556889A (en) * | 2009-05-15 | 2009-10-14 | 西安交通大学 | Method for manufacturing electron emission source of surface-conduction electron-emitter flat panel display |
-
2010
- 2010-03-25 CN CN 201010131891 patent/CN101775589A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1377988A (en) * | 2002-01-10 | 2002-11-06 | 上海交通大学 | Super hard nano composite film and its producing process |
| US20040013899A1 (en) * | 2002-05-30 | 2004-01-22 | Yoshiyuki Abe | Target for transparent conductive thin film, transparent conductive thin film and manufacturing method thereof, electrode material for display, organic electroluminescence element and solar cell |
| CN101158026A (en) * | 2007-09-13 | 2008-04-09 | 南京大学 | Method for growing ultra-thin NbN superconducting film on MgO or Si substrate |
| CN101556889A (en) * | 2009-05-15 | 2009-10-14 | 西安交通大学 | Method for manufacturing electron emission source of surface-conduction electron-emitter flat panel display |
Non-Patent Citations (2)
| Title |
|---|
| 《真空电子技术》 20091231 ***等 表面传导电子发射显示技术与器件 期刊显示技术专题第1-6页 1-3 , 第06期 * |
| 《稀有金属材料与工程》 20060630 王剑锋、宋忠孝等 磁控溅射氮分压对Nb-Si-N薄膜结构和性能的影响 期刊第978页左栏第1段至右栏第1段 1-3 第35卷, 第6期 * |
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Open date: 20100714 |