CN101774528B - Cross-scale biomimetic micro-nano branch structure array and preparation method thereof - Google Patents
Cross-scale biomimetic micro-nano branch structure array and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a cross-scale biomimetic micro-nano branch structure array and a preparation method thereof, which relate to the field of micro-nano materials and robots, particularly relate to a biomimetic adhesive material and a preparation method thereof and also relate to an electrochemical anodic oxidation process. The cross-scale biomimetic micro-nano branch structure array consists of a substrate and a micro-nano multilevel branch structure array, wherein the micro-nano multilevel branch structure array at least comprises a primary micron cylindrical structure array and a branch micro-nano cylindrical structure array. The preparation method thereof comprises the following steps of: firstly, etching an aluminum template with an argon ion beam to obtain an aluminum template with a primary micron hole array; secondly, preparing a micro-nano branch structure array in a definite point and direction on the template array by an electrochemical anodic oxidation process; thirdly, performing film extrusion and curing on the template by a polymer replica method; and finally, removing the template for forming to obtain the desired micro-nano structure array to form a biomimetic dry adhesive material. The cross-scale biomimetic micro-nano branch structure array and the preparation method thereof use electric characteristics to effectively solve the control problem of from micron to nanometer cross-scale branch structure arrays and have a great significance for the development of biomimetic adhesive materials and related dry biomimetic robots.
Description
Technical field:
The present invention relates to micro Nano material and robot field, particularly bionical adhesion material and preparation method thereof also relates to the electrochemical anodic oxidation technology.
Background technology:
The wall energy power of climbing of gecko mystery is attracting people's imitation over the past thousands of years.The adhesion of gecko is climbed the wall behavior and is different from other insects or animal, not residual any mucus or scratch down on its surface of climbing.The gecko toe is this to adhere to the adhesion mode of creeping with desorption rapidly on the surface of various roughness, researchers are called dryness and adhere to.The micro-nano structure of the toe bristle of gecko is to realize adhering to rapidly and desorption, reaches the place of the secret of dryness adhesion.The aggregation force of the Van der Waals force that this micro-nano structure array produced is well beyond the manyfold of the weight of its health.People such as Autumn in 2000 and Full have reported that the 681st page of " Nature " 405 volume adhesion special on the gecko toe mainly comes from the accumulation of the Van der Waals for that the bristle array of millions of micro nano structures on its toe produced.The accumulation of this molecular attraction must produce in suitable micro nano structure array, and this micro nano structure array must be complementary with the material of the formation micro nano structure that is adopted.To imitate gecko dryness adhesion material combines with Robotics might be implemented on irregular ground, metope and the ceiling and walks, arrive the human zone that is difficult to arrive and carry out work, very large application prospect is arranged in fields such as aeronautical and space technology, Electronic Packaging and high temperature bondings.The adhesion strength of early stage dryness adhesion material is well below desired value, and along with the application in this research direction of micro-processing technology and nanometer technology of preparing, the adhesion of dryness adhesion material improves greatly.Yet the parameter that the micro nano structure of gecko toe bristle is relevant is more, and interrelated again between them, the optimum condition that finds a suitable composition material and micro nano structure to be complementary is the work of a complexity.Realize that but the quick inverse conversion that adheres to desorption remains a challenge at present.
Although the mankind have carried out a large amount of research to the dryness adhesion of gecko, the human up to now micro-nano structure that does not also really find only, similar gecko toe bristle adheres to the dryness of realizing ideal.Its most important reason is that the present mankind can not effectively cooperating micro-nano structure with composition material as gecko toe bristle.Gecko has reduced the effective modulus of elasticity of toe bristle array integral body by the special construction of bristle, the multistage branched structure bristle of the micro-nano array of its unique high density, high aspect ratio makes it easily deformable, can realize and close intermolecular contact of various rough surfaces, reach dryness and stick.
Preparation for imitative gecko dryness adhesion material has had a lot of reports, on the whole, has two classes to prepare scheme.Promptly based on the preparation method of little manufacturing process from top to bottom (top-down) with based on the method for nanowire growth, package technique from bottom to top (Bottom-up).The Top-down preparation method is a host material with the macromolecule polymer mainly.Traditional top-down micro-nano technology of preparing such as photoetching, beamwriter lithography and etching etc., be used for from matrix, directly preparing micro-nano array, or be processed as means slightly with this and make earlier the template that has upright micro-nano hole, and then use and have the template of upright micro-nano hole polymer replica.At the 461st page of report of " Nature Materials " 2003 2 volumes, use the nano aperture template of beamwriter lithography preparation as Geim etc., then the polyimides replica is prepared the about 0.5 micron imitative gecko of diameter and adhere to array.And for example, Sitti etc. are at the 3322nd page of photoresist micrometre array of having reported by the photoetching process preparation of " Langmuir " 2007 23 volume, and they have reported that simultaneously the polyurethane with 8 microns of the diameters of photoresist template replica preparation adheres to array.The method of (Bottom-up) for from bottom to top, mainly be with CNT (Carbon Nanotubes at present, CNTs) growth is prepared as the basis, as Dai etc. at " Science " just the chemical vapour deposition technique that passes through of the 238th page of report of 2008 322 volumes is belonging to this method with the growth CNTs array on the substrate of transition-metal catalyst particle.
In sum, different preparation methods has characteristics separately, and the array of different materials preparation has also shown different adhesion properties.But because fixed point is directed on micrometer structure assembling or growing nano ordered structure are very difficult, therefore the array structure that obtains in the prior art or just in the micro-meter scale scope, just in the nanoscale scope, do not reach the adjustable demand of micro nano structure parameter of striding yardstick, thereby can not adapt to some specific instructions for use.How to find effectively from the controllable method for preparing of striding the yardstick branch structure array, promptly assembling how fixed point is directed on micrometer structure or growing nano ordered structure are the difficult problem of pendulum in face of current technical staff.
Summary of the invention
The object of the present invention is to provide a kind of cross-scale biomimetic micro-nano branch structure array and preparation method thereof, can adhere to the dynamic adhesion material that replaces with desorption rapidly to be used to prepare, promptly bionical dryness adhesion material satisfies the needs of different use.
To achieve these goals, the present invention by the following technical solutions.
Cross-scale biomimetic micro-nano branch structure array of the present invention, it is characterized in that, it is made up of substrate and micro-nano multistage branch structure array, described micro-nano multistage branch structure array includes the micro-nano cylindrical structure array of one-level micron cylindrical structure array and branch at least, wherein one-level micron cylindrical structure array becomes four jiaos to arrange or hexagonal Mi Dui arrangement, cylinder diameter is the 3-10 micron, highly is the 5-100 micron, and density is 0.25-3.21 * 10
6/ cm
2Perhaps, secondary sub-micron array of cylinders is set earlier on the top end face of one-level micron cylinder, the nanometer array of cylinders of branch is set on secondary sub-micron cylinder top end face then, wherein the sub-micron array of cylinders of secondary is arranged for hexagonal Mi Dui, cylinder diameter is the 200-400 nanometer, highly be the 1-5 micron, density is 0.4-1.3 * 10
9/ cm
2Perhaps, three grades of sub-micron cylindrical structure arrays of 2-3 branch are set on the sub-micron cylinder top end face of each secondary again, the level Four nanometer array of cylinders of 4-5 branch is set on three grades of sub-micron cylinder top end faces then, three grades sub-micron cylinder diameter is the 100-200 nanometer, highly be the 0.5-2 micron, density is 0.8-3.9 * 10
9/ cm
2, the nanometer cylinder diameter 50-100 nanometer of level Four, the degree of depth is the 100-500 nanometer, density is 0.32-1.95 * 10
10/ cm
2Described micro-nano multistage branch structure array is vertical with substrate or become 0-30 ° of inclination.
The preparation method of cross-scale biomimetic micro-nano branch structure array of the present invention, comprise that at first the metal aluminium flake surface after cleaning obtains the photoresist mask pattern by ultraviolet photolithographic, carry out the aluminum alloy pattern plate that the ar-ion beam etching obtains having required one-level micron hole array again; It is characterized in that, after obtaining having the aluminum alloy pattern plate of required one-level micron hole array, with electrochemistry anodic oxidation the get everything ready alumina formwork of required micro-nano branch structure array of beam system of on one-level micron hole array, fixing a point; Then, adopt polymer replica method plastic film, curing in this template, remove the template moulding at last, obtain the desired structure array; The directed preparation of described fixed point, be meant when carrying out anodic oxidation, with aluminum alloy pattern plate with hole array as anode electrode, other gets stereotype as cathode electrode, parallel placement of negative and positive two electrodes or one-tenth are tilted to place for 0-30 °, make hole axis direction or one-tenth 0-30 ° inclination parallel of hole array with direction of an electric field; Control the required aperture and the degree of depth by the different electrolyte of regulating in the anode oxidation process of voltage, oxidization time and use, oxidizing process finishes to obtain the alumina formwork of required micro-nano branch hole array of structures.
In above-mentioned preparation method, described oxidizing process can be divided into once or twice or carry out more than twice, the once oxidation process can obtain having the aluminum alloy pattern plate of secondary hole array, twice oxidizing process can obtain having the aluminum alloy pattern plate of three grades of hole arrays, three oxidizing process can obtain having the aluminum alloy pattern plate of level Four hole array, for example, be in the inorganic acid electrolyte of 2-3.5 at pH value earlier, phosphoric acid electrolyte for example, sulfuric acid electrolyte etc., described aluminum alloy pattern plate with one-level micron hole array is carried out an anodic oxidation, obtain the secondary sub-micron pore that hexagonal Mi Dui arranges in micron hole bottom surface, this secondary sub-micron pore diameter is the 200-400 nanometer, the degree of depth is the 1-5 micron, and density is 0.4-1.3 * 10
9/ cm
2Carry out two-step anodization by voltage drop method in above-mentioned phosphoric acid electrolyte then, obtain to have three grades of pressure nano/micron pore structures of 2-3 branch, these three grades of micron bore dias are the 100-200 nanometer, highly are the 0.5-2 micron, and density is 0.8-3.9 * 10
9/ cm
2, is in the organic acid electrolyte of 0.8-1.2 by voltage drop method at pH value more at last, as oxalic acid electrolyte etc., carry out three anodic oxidations, obtain to have the level Four alumina formwork of 4-5 branched structure, aperture 50-100 nanometer, the degree of depth is the 100-500 nanometer, and density is 0.32-1.95 * 10
10/ cm
2
In above-mentioned preparation method, describedly control the required aperture and the degree of depth by the different electrolyte of regulating in the anode oxidation process of voltage, oxidization time and use, it is the routine techniques in the existing electrochemical anodic oxidation technology, the aperture that voltage height, oxidization time length then obtain is big, the degree of depth is long, otherwise then the aperture is little, the degree of depth short.For example, among the present invention, when carrying out once oxidation, use the inorganic acid electrolyte of pH value as 2-3.5, its concentration is 0.1%-2%, and oxidation voltage is 180-190V, oxidization time 5-20 hour, and the hole diameter 200-400 nanometer that obtains, degree of depth 1-5 micron; When carrying out secondary oxidation, electrolyte is constant, and oxidation voltage drops to 105-135V gradually, and oxidization time reduces to 5-10 hour, and the hole diameter that obtains is the 100-200 nanometer, degree of depth 0.5-2 micron; Carry out three anodic oxidations, use the organic acid electrolyte of pH value as 0.8-1.2, its concentration is 0.1%-0.5%, and oxidation voltage is 40-50V, and oxidization time 10-30 minute, the hole diameter 50-100 nanometer that obtains, the degree of depth were the 100-500 nanometer.
In above-mentioned preparation method, the micron hole array that described ar-ion beam etching obtains, its distribution mode is four jiaos arranges or the close heap formula arrangement of hexagonal, and bore dia is the 3-10 micron, and the degree of depth is the 5-100 micron, and density is 0.25-3.21 * 10
6/ cm
2Described " adopting polymer replica method plastic film, curing in this template; remove the template moulding at last; obtain the desired structure array " is routine techniques, promptly earlier the alumina formwork that has micro-nano branch hole array of structures is connected processing fully, with liquid state macromolecule polymer,, under vacuum condition, be overlying on the template then as polyurethane (TPU), polymethyl methacrylate (PMMA), dimethyl silicone polymer polymers such as (PDMS), after treating its solidifying and setting, with saturated SnCl
4The solution displacement reaction is removed the aluminium lamination at the alumina formwork back side, and last the immersion in the sodium hydroxide solution of 0.2M removed template, promptly obtains the cross-scale biomimetic micro-nano branch structure array that is made of macromolecule polymer material.
The concrete operations step of relevant oxidizing process is:
(1) at first the aluminum alloy pattern plate with one-level micron hole array was carried out one time anodic oxidation 5-20 hour, oxidation voltage is 180-190V, obtain having secondary multiple-branching construction alumina formwork, the alumina layer that promptly has diameter 200-400 nano aperture, the degree of depth is the 1-5 micron, and hole density is 0.4-1.3 * 10
9/ cm
2, the pore size distribution mode is arranged for hexagonal Mi Dui.In the oxidizing process, used electrolyte is that pH value is the inorganic acid electrolyte of 2-3.5, and its concentration is 0.1%-2%;
(2) reduce voltage then gradually to 105-135V, the secondary oxidation aluminum alloy pattern plate was carried out two-step anodization 5-10 hour, acquisition has the tertiary oxidation aluminum alloy pattern plate of 2-3 branched structure, aperture 100-200 nanometer, the degree of depth is the 0.5-2 micron, used electrolyte is that pH value is the inorganic acid electrolyte of 2-3.5, and its concentration is 0.1%-2%;
(3) reduce voltage more gradually to 40-50V, the tertiary oxidation aluminum alloy pattern plate was carried out three times anodic oxidation 10-30 minute, acquisition has the level Four alumina formwork of 4-5 branched structure, aperture 50-100 nanometer, the degree of depth is the 0.2-1 micron, used electrolyte is that pH value is the organic acid of 0.8-1.2, and concentration is 0.1-0.5M.
The present invention uses the electrochemistry anodic oxidation in the prior art, to have micron aluminum alloy pattern plate of pore space structure array as anode electrode, stereotype is as cathode electrode, parallel placement of negative and positive two electrodes or one-tenth are tilted to place for 0-30 °, the ingenious Electric Field Characteristics of having utilized, thereby obtain on the micrometer structure array ordered structure of the directed assemble nanometer array of fixed point, realized from the micrometer structure to the nanostructured, striding the yardstick combination.During the parallel placement of negative and positive two electrodes, under electric field action, only carry out anodic oxidation and form new pore space structure at the hole bottom face vertical with direction of an electric field, and, the axis of the new hole that forms is parallel with the foramen primum hole axis, the foramen primum sidewall is parallel with direction of an electric field, can not carry out anodic oxidation, also just can not produce new hole; Perhaps, place at negative and positive two electrodes when being 0-30 ° of angle, be that the hole axis direction of hole array and cathode electrode are when having the inclination of 0-30 ° of angle, make the axially bored line direction after the inclination parallel with direction of an electric field, under electric field action, also only in the hole bottom face generation anodic oxidation of tilting and form new pore space structure, new hole axis and former axially bored line have the inclination of 0-30 ° of angle; Equally, the foramen primum sidewall is because of parallel with direction of an electric field, and anodic oxidation can not be carried out.
The present invention combines photoetching, ion beam etching and electrochemistry anodic oxidation effectively, prepare and have the alumina formwork that multistage multiple-branching construction is striden the micro-nano hole array of yardstick, and obtained having the micro-nano array of branched structure by the macromolecule polymer material replica after the liquid stateization, become more effective dryness adhesion material.The present invention has fixed a point directed assembling on micrometer structure micro-nanometer ordered structure, efficiently solve from the micro-meter scale to the nanoscale to stride the yardstick branch structure array controlled.The present invention has very important meaning for the development of the development of biomimetic micro-nano array dryness adhesion material and relevant bio-robot.
Description of drawings
Fig. 1 is the schematic diagram that the described cross-scale biomimetic micro-nano branch structure of the embodiment of the invention 1 preparation adheres to array.
Fig. 2 is preparation embodiment 1 a described alumina formwork schematic diagram with micro-nano branch structure hole.
Fig. 3 is that the described cross-scale biomimetic micro-nano branch structure that embodiment 2 obtains adheres to the array scanning electromicroscopic photograph.
The specific embodiment
Below in conjunction with drawings and Examples the present invention is described further:
Embodiment 1:
(1) with high-purity aluminium flake ultrasonic cleaning in acetone and ethanol successively, removes the greasy dirt on aluminium flake surface.
(2) with after the oven dry of the high-purity aluminium flake after the decontamination, at N
2Or place tube furnace in the inert atmosphere, in 500 ℃ of annealing in process 4 hours.
(3) (ethanol: carry out electrochemical polish perchloric acid=9: 1 volume ratios), as negative electrode, voltage is 20V to the aluminium flake after will annealing with graphite, eliminates the cut and the oxide layer on aluminium flake surface at the mixed solution of absolute ethyl alcohol and perchloric acid.
(4) obtain the photoresist mask pattern by ultraviolet photolithographic on the aluminium flake surface.
(5) aluminium flake that has the photoresist mask is carried out the ar-ion beam etching, ion energy is 500eV, ion beam vertical incidence, beam current density 0.5mA/cm
2, operating pressure 2 * 10
-2Pa obtains having micron aluminum alloy pattern plate of hole array, 3 microns of its micron bore dias, and 5 microns of the degree of depth, 3 microns of pitchs of holes, the pore size distribution form is that hexagonal is arranged.
(6) remove the photoresist on aluminum alloy pattern plate surface and to once more the surface being cleaned and electrochemical polishing treatment.
(7) in phosphoric acid electrolyte aluminum alloy pattern plate is carried out once oxidation, DC voltage is 190V, and oxidization time 12 hours obtains having diameter 400 nanometers, the alumina formwork of the secondary multiple-branching construction array of dark 2 microns holes.Electrolyte is that pH value is 3 phosphoric acid solution, and its concentration is 0.2%,
(8) secondary oxidation begins step-down after finishing, and voltage drops to 110V, and electrolyte is constant, continues oxidation 8 hours, obtains to have diameter 150 nanometers, the alumina formwork of three grades of branch's arraies of structures of dark 1 micron hole.
(9) three oxidations finish the back and continue step-down, and after voltage dropped to 40V, it was 1 oxalic acid electrolyte that electrolyte changes pH value into, concentration is 0.3M, continue oxidation 30 minutes, obtain to have diameter 60 nanometers, the alumina formwork of the level Four branch structure array of dark 500 nano apertures.Its signal as shown in Figure 2.From figure as can be seen, the micro-nano hole axis that level Four is different is all parallel.
(10) utilize saturated SnCl
4The solution displacement reaction is removed the aluminium at the alumina formwork back side, and this template is swum in the phosphoric acid solution of 6w%, and eroding to alumina formwork film surface under 30 ℃ has solution to penetrate, the bilateral alumina formwork that is promptly connected fully.
(11) thermoplastic polyurethane (TPU) is overlying on the template, treats its typing back removal template, obtain the bionical micro-nano branch structure of polyurethane and adhere to array, as shown in Figure 1.Among Fig. 1, one-level micron array of cylinders 2 is vertically connected on the substrate 1, secondary sub-micron array of cylinders 3 is vertically connected on the top end face of one-level micron array of cylinders, three grades of sub-micron array of cylinders 4 are vertically connected on the top end face of the little array of cylinders of secondary, and level Four nanometer array of cylinders 5 is vertically connected on the top end face of three grades of sub-micron array of cylinders.
Embodiment 2:
(1) with high-purity aluminium flake ultrasonic cleaning in acetone and ethanol successively, removes the greasy dirt on aluminium flake surface.
(2) with after the high-purity aluminium flake oven dry behind the degrease, at N
2Or place tube furnace in the inert atmosphere, in 500 ℃ of annealing in process 4 hours.
(3) (ethanol: carry out electrochemical polish perchloric acid=9: 1 volume ratios), as negative electrode, voltage is 20V to the aluminium flake after will annealing with graphite, eliminates the cut and the oxide layer on aluminium flake surface at the mixed solution of absolute ethyl alcohol and perchloric acid.
(4) obtain the photoresist mask pattern by ultraviolet photolithographic on the aluminium flake surface.
(5) aluminium flake that has the photoresist mask is carried out the ar-ion beam etching, ion energy is 600V, 30 ° of ion beam incident angles, beam current density 0.6mA/cm
2, operating pressure 2 * 10
-2Pa obtains 5 microns of diameters, the micron hole array of 10 microns inclinations of the degree of depth.
(6) remove the photoresist on aluminium flake surface and to aluminium flake surface once more cleaning and electrochemical polishing treatment.
(7) alumina formwork is carried out once oxidation, electrolyte is that pH value is 2.5 phosphoric acid solution, and phosphoric acid concentration 1.2%, DC voltage are 190V, and oxidization time 18 hours obtains having diameter 400 nanometers, the alumina layer of dark 4 microns holes.
(8) secondary oxidation begins step-down after finishing, and voltage drops to 135V, and electrolyte is constant, continues oxidation 10 hours, obtains diameter 200 nanometers, dark 2 microns alumina layers with two branched structure holes.
(9) utilize saturated SnCl
4The solution displacement reaction is removed the aluminium lamination at the alumina formwork back side, and alumina formwork is swum in the phosphoric acid solution of 6w%, and eroding to alumina formwork film surface under 30 ℃ has solution to penetrate, the bilateral alumina formwork that is promptly connected fully.
(10) thermoplastic polymethylmethacrylapellets (PPMA) is overlying on the template, treats its typing back removal template, obtain three grades of biomimetic micro-nano branch structures and adhere to arrays.
Shown in Figure 3 is with Electronic Speculum the described cross-scale biomimetic micro-nano branch structure that embodiment 2 obtains to be adhered to the photo that array scanning obtains.By this photo as can be seen, its structure is consistent with the above, and promptly three grades of biomimetic micro-nano branch structures adhere to array, and wherein, one-level micron cylindrical structure array is four jiaos of arrangements; Secondary sub-micron cylinder becomes hexagonal Mi Dui to arrange on the cylindrical top end face of one-level micron; Three grades of nanometer cylinders are on the cylindrical top end face of secondary micron, and all micro-nano cylinder axis are parallel mutually.
Claims (5)
1. the method for preparing cross-scale biomimetic micro-nano branch structure array, comprise that at first the metal aluminium flake surface after cleaning obtains the photoresist mask pattern by ultraviolet photolithographic, carry out the aluminum alloy pattern plate that the ar-ion beam etching obtains having required one-level micron hole array again; It is characterized in that, after obtaining having the aluminum alloy pattern plate of required one-level micron hole array, with electrochemistry anodic oxidation the get everything ready alumina formwork of required micro-nano branch structure array of beam system of on one-level micron hole array, fixing a point; Then, adopt polymer replica method plastic film, curing in this template, remove the template moulding at last, obtain required micro-nano branch structure array; The directed preparation of described fixed point, be meant when carrying out electrochemical anodic oxidation, with aluminum alloy pattern plate with hole array as anode electrode, other gets stereotype as cathode electrode, parallel placement of negative and positive two electrodes or one-tenth are tilted to place for 0-30 °, make hole axis direction or one-tenth 0-30 ° inclination parallel of hole array with direction of an electric field; Control the required aperture and the degree of depth by the different electrolyte of regulating in the anode oxidation process of voltage, oxidization time and use, oxidizing process finishes to obtain the alumina formwork of required micro-nano branch hole array of structures.
2. preparation method as claimed in claim 1, it is characterized in that, described oxidizing process is divided into once or twice or carries out more than twice, the once oxidation process obtains having the aluminum alloy pattern plate of secondary hole array, twice oxidizing process obtains having the aluminum alloy pattern plate of three grades of hole arrays, and three oxidizing process obtain having the aluminum alloy pattern plate of level Four hole array.
3. preparation method as claimed in claim 2 is characterized in that, the oxidation voltage that uses in the described once oxidation process is 180-190V, and oxidization time 5-20 hour, used electrolyte was that pH value is the inorganic acid electrolyte of 2-3.5, and its concentration is 0.1%-2%.
4. preparation method as claimed in claim 2, it is characterized in that the oxidation voltage that oxidation is for the second time used in described twice oxidizing process drops to 105-135V, oxidization time 5-10 hour gradually, used electrolyte is that pH value is the inorganic acid electrolyte of 2-3.5, and its concentration is 0.1%-2%.
5. preparation method as claimed in claim 2, it is characterized in that the oxidation voltage that oxidation is for the third time used in described three oxidizing process is 40-50V, oxidization time 10-30 minute, used electrolyte is that pH value is the organic acid of 0.8-1.2, and concentration is 0.1-0.5mol/L.
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| CN114477078B (en) * | 2022-04-08 | 2022-07-15 | 中国科学技术大学 | Processing method and application of integrated cross-scale micro-nano column array |
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2010
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| Dong Sung Kim等.Replication of high-aspect-ratio nanopillar array for biomimetic gecko foot-hair prototype by UV nano embossing with anodic aluminum oxide mold.《Microsystem Technologies》.2006,第13卷(第5-6期),601-606. * |
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