CN101740661A - Method for preparing selective emission area of crystalline silicon solar cell - Google Patents
Method for preparing selective emission area of crystalline silicon solar cell Download PDFInfo
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- CN101740661A CN101740661A CN200910157193A CN200910157193A CN101740661A CN 101740661 A CN101740661 A CN 101740661A CN 200910157193 A CN200910157193 A CN 200910157193A CN 200910157193 A CN200910157193 A CN 200910157193A CN 101740661 A CN101740661 A CN 101740661A
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Abstract
The invention relates to a method for preparing a selective emission area of a crystalline silicon solar cell. The method comprises the following steps of: (1) growing a layer of silicon dioxide on the surface of a crystalline silicon slice; (2)coating a masking film on the grown silicon dioxide layer to form a frame of an electrode window; (3) removing an oxide layer at the position of the electrode window, namely removing the silicon dioxide layer not covered by the masking film; (4) removing the masking film; (5) performing high-concentration diffusion doping; (6) washing the oxide layer, namely removing the silicon dioxide layer originally covered by the masking film; and (7) performing low-concentration diffusion doping. The method has the advantages of simple preparation process, low cost, no pollution and an average cell conversion efficiency of 18.5 percent.
Description
Technical field
The present invention relates to a kind of preparation method of crystal silicon solar cell selective emitter region.
Background technology
Along with crystal silicon solar energy battery occuping market share, further improve conversion efficiency, reduce cost, become the major issue of all solutions of domestic and international crystal silicon solar energy battery manufacturer.In recent years, in the field of study, the laboratory efficient of small size monocrystalline silicon battery has reached 24.7%.But the preparation technology of these high-efficiency batteries is too complicated, can't satisfy the requirement of industrialization.The method that realizes selective emission area has multiple, and modal have photoetching, a laser grooving, or the like.But these method technology more complicated, the equipment recruitment is more, and relative cost can obviously rise, and only is applicable in small-scale test or the small-scale production, is difficult to realize mass production.In recent years, the method for selective emission area preparation occurred realizing, but because the pollution problem that silk screen printing brings there is not substantial quilt extensively to use yet with silk screen printing phosphorus slurry.
Preparation technology's flow process of conventional crystal silicon solar energy battery is as follows:
The conventional cleaning of silicon chip surface and surface microstructure processing → doping limit at diffusion → quarter → SiNX preparation → printing positive and negative electrode and back surface field, sintering → test.In industrial field, the conversion efficiency of this conventional monocrystalline silicon battery is 16%～17%.
Summary of the invention
The preparation method who the purpose of this invention is to provide that a kind of preparation technology is simple, cost is low, pollution-free, the average conversion efficiency of battery reaches 18.5% crystal silicon solar cell selective emitter region.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of preparation method of crystal silicon solar cell selective emitter region comprises the steps:
(1) in the top layer of crystal silicon chip growth layer of silicon dioxide;
(2) on the silicon dioxide layer of growth, be coated with seal and cover film (this coverage film is ten chemical industry imported materials of Japan), form the electrode window through ray framework;
(3) oxide layer at removal electrode window through ray place is promptly removed and is covered the silicon dioxide layer that film covers;
(4) remove the coverage film;
(5) carry out the high concentration diffusing, doping;
(6) carry out oxide layer and clean, soon originally covered the silicon dioxide layer of film covering and remove;
(7) carry out the low concentration diffusing, doping.
As the further optimization of such scheme, described crystal silicon chip is before growthing silica, and the surface is through the processing of conventional cleaning and surface microstructure.
The thickness of described silicon dioxide layer is 5-8nm.Silicon dioxide layer is crossed and thinly or blocked up all will be caused the high-concentration and low-concentration diffusion to be difficult to form.
Described step (2) adopts screen printing mode to be coated with seal and covers film.
Described step (3) is selected for use the hydrofluoric acid solution of 10-20% concentration to remove and is not covered the silicon dioxide layer that film covers.
Described step (4) is selected for use the sodium hydroxide solution of 5% concentration to remove and is covered film.
Described step (5) adopts the phosphorus oxychloride liquid source to be converted into gaseous state, carries out 45-55 minute high concentration diffusing, doping under 870-900 ℃ high temperature, the electrode window through ray sky is got along alone reach the diffusion of dark concentration.
Described step (7) adopts the phosphorus oxychloride liquid source to be converted into gaseous state, carries out 45-55 minute low concentration diffusing, doping under 810-830 ℃ high temperature.
The protective effect that the present invention mainly adopts silicon dioxide and covers film forms electrode window through ray, the crystal silicon chip surface is carried out the diffusing, doping of variable concentrations again, forms local selective emission area.The low concentration doping zone not only can reduce the recombination rate of minority carrier, can also carry out surface passivation preferably to silicon chip surface, improves the body life time of its silicon chip.Reduce the surface recombination rate of minority carrier, it mainly is the oppositely full electric current that closes that reduces battery, more advantageously improve the open circuit voltage and the short circuit current of battery, but the diffusion region sheet resistance of low concentration doping is bigger, increased resistance, often to when making electrode, causing higher contact resistance to photogenerated current.In order to remedy the defective that low concentration doping brings, adopt the high local concentrations doped region, promptly adopt high-concentration dopant in the silver electrode zone, adopt low concentration doping in photo-absorption region.
The present invention is by under the gate electrode line (Emitter electrode) of battery sheet sensitive surface high concentration diffusion layer being set, and other parts realize for the low concentration diffusion layer.Its principle is to respond by raising shortwave wave spectrum to improve Jsc, improves FF and improves Voc by reducing high concentration diffusion field by the contact resistance that reduces the Emitter electrode.This method can realize solar cell selective emitter region easily, reduces surface recombination velocity, reduces the energy gap effect that narrows down, and finally improves the electrical property of solar cell.Preparation method of the present invention is simple, is easy to realize, and is pollution-free.
The present invention makes finally crystal silicon chip be covered film protection place diffusion sheet resistance and is controlled at 80-100 ohm that electrode window through ray blank space diffusion sheet resistance is controlled at 20-40 ohm.At present, experimental result shows that this technology is produced the high-efficiency crystal silicon solar cell, and average conversion efficiency reaches 18.5%.
The invention will be further described below in conjunction with the drawings and specific embodiments.
Description of drawings
Fig. 1 is the preparation method's of crystal silicon solar cell selective emitter region of the present invention process chart.
Embodiment
The invention will be further described below by specific embodiment, but the present invention is not limited by following examples.
Each embodiment sees also accompanying drawing 1.
Embodiment 1:
1. routine cleaning and surface microstructure processing are carried out in the crystal silicon chip surface.
2. in the top layer of crystal silicon chip growth layer of silicon dioxide, THICKNESS CONTROL is at 5nm.
3. on the silicon dioxide layer of growth, adopt screen printing mode to be coated with seal and cover film, form the electrode window through ray framework.
4. remove the oxide layer at electrode window through ray place, promptly remove and do not covered the silicon dioxide layer that film covers.Select for use the hydrofluoric acid solution of 10% concentration to remove the silicon dioxide layer of not covered the film covering.
5. select for use the sodium hydroxide solution of 5% concentration to remove the coverage film.
6. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 870 ℃ high temperature, carry out 55 minutes high concentration diffusing, doping.
7. carry out oxide layer and clean, soon originally covered the silicon dioxide layer of film covering and remove.Just the PSG on the common process cleans (phosphorosilicate glass cleaning).
8. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 810 ℃ high temperature, carry out 55 minutes low concentration diffusing, doping.
Quarter the limit.
10.SiNX preparation.
11. printing positive and negative electrode and back surface field, sintering.
12. test.
Embodiment 2:
1. routine cleaning and surface microstructure processing are carried out in the crystal silicon chip surface.
3. in the top layer of crystal silicon chip growth layer of silicon dioxide, THICKNESS CONTROL is at 6nm.
3. on the silicon dioxide layer of growth, adopt screen printing mode to be coated with seal and cover film, form the electrode window through ray framework.
4. remove the oxide layer at electrode window through ray place, promptly remove and do not covered the silicon dioxide layer that film covers.Select for use the hydrofluoric acid solution of 12% concentration to remove the silicon dioxide layer of not covered the film covering.
5. select for use the sodium hydroxide solution of 5% concentration to remove the coverage film.
6. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 880 ℃ high temperature, carry out 53 minutes high concentration diffusing, doping.
7. carry out oxide layer and clean, soon originally covered the silicon dioxide layer of film covering and remove.Just the PSG on the common process cleans (phosphorosilicate glass cleaning).
8. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 815 ℃ high temperature, carry out 53 minutes low concentration diffusing, doping.
Quarter the limit.
10.SiNX preparation.
11. printing positive and negative electrode and back surface field, sintering.
12. test.
Embodiment 3:
1. routine cleaning and surface microstructure processing are carried out in the crystal silicon chip surface.
4. in the top layer of crystal silicon chip growth layer of silicon dioxide, THICKNESS CONTROL is at 6.5nm.
3. on the silicon dioxide layer of growth, adopt screen printing mode to be coated with seal and cover film, form the electrode window through ray framework.
4. remove the oxide layer at electrode window through ray place, promptly remove and do not covered the silicon dioxide layer that film covers.Select for use the hydrofluoric acid solution of 15% concentration to remove the silicon dioxide layer of not covered the film covering.
5. select for use the sodium hydroxide solution of 5% concentration to remove the coverage film.
6. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 885 ℃ high temperature, carry out 50 minutes high concentration diffusing, doping.
7. carry out oxide layer and clean, soon originally covered the silicon dioxide layer of film covering and remove.Just the PSG on the common process cleans (phosphorosilicate glass cleaning).
8. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 820 ℃ high temperature, carry out 50 minutes low concentration diffusing, doping.
Quarter the limit.
10.SiNX preparation.
11. printing positive and negative electrode and back surface field, sintering.
12. test.
Embodiment 4:
1. routine cleaning and surface microstructure processing are carried out in the crystal silicon chip surface.
5. in the top layer of crystal silicon chip growth layer of silicon dioxide, THICKNESS CONTROL is at 7nm.
3. on the silicon dioxide layer of growth, adopt screen printing mode to be coated with seal and cover film, form the electrode window through ray framework.
4. remove the oxide layer at electrode window through ray place, promptly remove and do not covered the silicon dioxide layer that film covers.Select for use the hydrofluoric acid solution of 17% concentration to remove the silicon dioxide layer of not covered the film covering.
5. select for use the sodium hydroxide solution of 5% concentration to remove the coverage film.
6. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 890 ℃ high temperature, carry out 48 minutes high concentration diffusing, doping.
7. carry out oxide layer and clean, soon originally covered the silicon dioxide layer of film covering and remove.Just the PSG on the common process cleans (phosphorosilicate glass cleaning).
8. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 825 ℃ high temperature, carry out 48 minutes low concentration diffusing, doping.
Quarter the limit.
10.SiNX preparation.
11. printing positive and negative electrode and back surface field, sintering.
12. test.
Embodiment 5:
1. routine cleaning and surface microstructure processing are carried out in the crystal silicon chip surface.
6. in the top layer of crystal silicon chip growth layer of silicon dioxide, THICKNESS CONTROL is at 8nm.
3. on the silicon dioxide layer of growth, adopt screen printing mode to be coated with seal and cover film, form the electrode window through ray framework.
4. remove the oxide layer at electrode window through ray place, promptly remove and do not covered the silicon dioxide layer that film covers.Select for use the hydrofluoric acid solution of 20% concentration to remove the silicon dioxide layer of not covered the film covering.
5. select for use the sodium hydroxide solution of 5% concentration to remove the coverage film.
6. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 900 ℃ high temperature, carry out 45 minutes high concentration diffusing, doping.
7. carry out oxide layer and clean, soon originally covered the silicon dioxide layer of film covering and remove.Just the PSG on the common process cleans (phosphorosilicate glass cleaning).
8. adopt the phosphorus oxychloride liquid source to be converted into gaseous state, under 830 ℃ high temperature, carry out 45 minutes low concentration diffusing, doping.
Quarter the limit.
10.SiNX preparation.
11. printing positive and negative electrode and back surface field, sintering.
12. test.
By the foregoing description, make finally crystal silicon chip be covered film protection place diffusion sheet resistance and be controlled at 80-100 ohm that electrode window through ray blank space diffusion sheet resistance is controlled at 20-40 ohm.At present, experimental result shows that this technology is produced the high-efficiency crystal silicon solar cell, and average conversion efficiency reaches 18.5%.
Claims (8)
1. the preparation method of a crystal silicon solar cell selective emitter region is characterized in that comprising the steps:
(1) in the top layer of crystal silicon chip growth layer of silicon dioxide;
(2) on the silicon dioxide layer of growth, be coated with seal and cover film, form the electrode window through ray framework;
(3) oxide layer at removal electrode window through ray place is promptly removed and is covered the silicon dioxide layer that film covers;
(4) remove the coverage film;
(5) carry out the high concentration diffusing, doping;
(6) carry out oxide layer and clean, soon originally covered the silicon dioxide layer of film covering and remove;
(7) carry out the low concentration diffusing, doping.
2. the preparation method of a kind of crystal silicon solar cell selective emitter region as claimed in claim 1 is characterized in that: described crystal silicon chip is before growthing silica, and the surface is cleaned and the processing of surface microstructure through conventional.
3. the preparation method of a kind of crystal silicon solar cell selective emitter region as claimed in claim 1, it is characterized in that: the thickness of described silicon dioxide layer is 5-8nm.
4. the preparation method of a kind of crystal silicon solar cell selective emitter region as claimed in claim 1 is characterized in that: described step (2) adopts screen printing mode to be coated with seal and covers film.
5. the preparation method of a kind of crystal silicon solar cell selective emitter region as claimed in claim 1 is characterized in that: the silicon dioxide layer that described step (3) selects for use the hydrofluoric acid solution removal of 10-20% concentration to be covered by the coverage film.
6. the preparation method of a kind of crystal silicon solar cell selective emitter region as claimed in claim 1 is characterized in that: described step (4) is selected for use the sodium hydroxide solution of 5% concentration to remove and is covered film.
7. the preparation method of a kind of crystal silicon solar cell selective emitter region as claimed in claim 1, it is characterized in that: described step (5) adopts the phosphorus oxychloride liquid source to be converted into gaseous state, carries out 45-55 minute high concentration diffusing, doping under 870-900 ℃ high temperature.
8. the preparation method of a kind of crystal silicon solar cell selective emitter region as claimed in claim 1, it is characterized in that: described step (7) adopts the phosphorus oxychloride liquid source to be converted into gaseous state, carries out 45-55 minute low concentration diffusing, doping under 810-830 ℃ high temperature.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569495A (en) * | 2010-12-17 | 2012-07-11 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN102629647A (en) * | 2012-05-03 | 2012-08-08 | 上海联孚新能源科技有限公司 | Manufacture method of solar battery |
| CN104412393A (en) * | 2012-12-28 | 2015-03-11 | 京瓷株式会社 | Solar cell element and method for manufacturing solar cell element |
| CN110289319A (en) * | 2019-05-14 | 2019-09-27 | 江苏顺风光电科技有限公司 | In conjunction with the preparation method of the selective emitter monocrystalline PERC battery of tunnel oxide |
| WO2022068132A1 (en) * | 2020-09-30 | 2022-04-07 | 浙江正泰太阳能科技有限公司 | Selective emitter preparation method, solar cell and preparation method therefor |
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| CN104716232B (en) * | 2015-03-13 | 2016-10-05 | 中节能太阳能科技（镇江）有限公司 | A kind of solaode emitter stage dopant profiles method |
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| CN101022140A (en) * | 2007-03-02 | 2007-08-22 | 江苏艾德太阳能科技有限公司 | Method for realizing crystal silicon solar cell selective emitter region |
| CN101101936A (en) * | 2007-07-10 | 2008-01-09 | 中电电气（南京）光伏有限公司 | Making method for selective transmission node crystal silicon solar battery |
| CN101369612A (en) * | 2008-10-10 | 2009-02-18 | 湖南大学 | Production method for implementing selective emitter solar battery |
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- 2009-12-24 CN CN2009101571930A patent/CN101740661B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569495A (en) * | 2010-12-17 | 2012-07-11 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN102569495B (en) * | 2010-12-17 | 2014-03-19 | 上海凯世通半导体有限公司 | Method for doping solar wafer and doped wafer |
| CN102629647A (en) * | 2012-05-03 | 2012-08-08 | 上海联孚新能源科技有限公司 | Manufacture method of solar battery |
| CN104412393A (en) * | 2012-12-28 | 2015-03-11 | 京瓷株式会社 | Solar cell element and method for manufacturing solar cell element |
| CN104412393B (en) * | 2012-12-28 | 2016-11-09 | 京瓷株式会社 | Solar cell device and the manufacture method of solar cell device |
| CN110289319A (en) * | 2019-05-14 | 2019-09-27 | 江苏顺风光电科技有限公司 | In conjunction with the preparation method of the selective emitter monocrystalline PERC battery of tunnel oxide |
| WO2022068132A1 (en) * | 2020-09-30 | 2022-04-07 | 浙江正泰太阳能科技有限公司 | Selective emitter preparation method, solar cell and preparation method therefor |
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Effective date of registration: 20200120 Address after: 312000 No.22, Sanjiang East Road, Doumen street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Zhejiang sunflower Juhui New Energy Technology Co., Ltd Address before: 312071 Sanjiang road Zhejiang Shaoxing Paojiang Industrial Zone Patentee before: Zhejiang Sunflower Light Energy Science & Technology LLC. |
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