CN101101936A - Making method for selective transmission node crystal silicon solar battery - Google Patents
Making method for selective transmission node crystal silicon solar battery Download PDFInfo
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- CN101101936A CN101101936A CNA2007100250327A CN200710025032A CN101101936A CN 101101936 A CN101101936 A CN 101101936A CN A2007100250327 A CNA2007100250327 A CN A2007100250327A CN 200710025032 A CN200710025032 A CN 200710025032A CN 101101936 A CN101101936 A CN 101101936A
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Abstract
The invention is concerned with the making method of the selective emitter crystal silicon solar cell including high thickness doping diffusion. It is to form the electrode window on the silicon dioxide layer of the crystal silicon chip with the printer technique cauterant, next is to conduct high thickness doping diffusion in the POCl3 atmosphere of the electrode window sector. The invention is with low cost but high productivity.
Description
Technical field
The present invention relates to a kind of preparation method of crystal-silicon solar cell, especially a kind of preparation method of selective transmission node crystal silicon solar battery.
Background technology
At present the crystal-silicon solar cell commercially produced of maturation is simple with its technological process, is convenient to advantage such as large-scale production and develops rapidly.As shown in Figure 1, the typical process flow of battery is like this: remove the silicon chip surface damage, and formation deflection surfaces structure and chemical cleaning → at POCl
3Spread in the atmosphere → remove periphery P N knot → surface passivation and deposition antireflection layer → silk screen printing just, backplate and back of the body surface field → sintering form ohmic contact → test stepping.This technology of commercially producing crystal-silicon solar cell has the advantages that technology is simple, automation degree of equipment is higher, be easy to large-scale production, thereby can reduce cost, and makes crystal-silicon solar cell move towards rapidly to commercially produce.Some intrinsic defectives-because process procedure is fairly simple, the photoelectric conversion rate of solar cell is lower but this technology also has.The crystal-silicon solar cell average light optoelectronic conversion ratio of generally commercially producing is difficult to reach 17.0%.
The link that above-mentioned technology restriction solar cell photoelectric conversion rate improves the most important thing is diffusion and this two procedures that metallizes.This two procedures is a pair of contradiction of mutual restriction.
At diffusing procedure, low doping concentration can reduce the bluk recombination probability of minority carrier, and can carry out surface passivation preferably, reduces the surface recombination probability of minority carrier, thereby reduce the reverse saturation current of battery, improve the open circuit voltage and the short circuit current of battery.In addition, because of the surface the closer to solar cell, the generation rate of photo-generated carrier is high more, and high more the closer to the collection rate of diffused junction photo-generated carrier, so shallow diffused junction can obtain high collection rate in the zone of high carrier generation rate, improves the short circuit current of battery.
What deviate from mutually therewith is, in the metallization operation, the battery front, rear surface needs printed silver slurry and aluminium paste, thus the ohmic contact that needs high surface doping concentration to obtain.Low surface doping concentration, when making electrode, make metal and silicon contact portion form high contact resistance, and the sheet resistance of diffusion region is bigger, also increased resistance to photogenerated current, thereby further increase the series resistance of solar cell, reduce the fill factor, curve factor of battery, the cell photoelectric transfer ratio is descended.
Therefore, in conventional silicon solar cell, the concentration of diffusion will adapt to the requirement of printing electrode, usually the skin layer resistance after requiring to spread is the high-concentration dopant about 40 Ω/square, under such concentration, silicon chip surface charge carrier recombination rate is higher, can reduce short-circuit current density, thereby makes decrease in efficiency.
Consider from battery open circuit voltage and short circuit current angle, should carry out low concentration doping.From fill factor, curve factor and electrode and the consideration of battery sheet contact angle, should carry out high-concentration dopant.So, can fine solution the process of contradiction between the two, be to make the selectivity emission electrode: promptly adopt high-concentration dopant, adopt low concentration doping in photo-absorption region at the electrode contact area on battery sheet surface.
A lot of mechanisms all make selective transmission node crystal silicon solar battery in the method that searching can reduce cost, can produce in enormous quantities again, but also not can be used for the preparation method of suitability for industrialized production at present.
The present very ripe high-efficiency crystal silicon solar cell manufacturing technology of laboratory research, high optoelectronic conversion ratio is than high about 7% (absolute values) of above-mentioned battery, this technology is to adopt photoetching technique to etch electrode pattern on silicon dioxide layer, carry out the high-concentration dopant diffusion, remove silicon dioxide layer then, carry out the low concentration doping diffusion again, form and select the row emitter junction.As shown in Figure 2, its technical process is as follows:
A removes the silicon chip surface damage, forms deflection surfaces structure and chemical cleaning.
B thermal oxide growth silicon dioxide layer.
The c photoetching forms electrode window through ray.
D is at POCl
3Carry out dense diffusion in the atmosphere.
E removes silicon dioxide layer.
F is at POCl
3Carry out light diffusion in the atmosphere.
G removes periphery and back side PN junction.
H surface passivation and deposition antireflection layer.
I printing positive and negative electrode and back of the body surface field, sintering.
The advantage of photoetching technique is to realize extremely accurate structure graph.But, because photoetching technique mainly is to use at semiconductor and integrated circuit fields, therefore, equipment price costliness, cost height, can not adapt to the such production in enormous quantities of solar cell, the characteristics of crystal-silicon solar cell industry are less demanding and require very high to production efficiency to the figure accuracy.Though it is very ripe that this also is a photoetching technique, there is not the major reason of application in the crystal-silicon solar cell industry.
Summary of the invention
Technical problem to be solved by this invention is, overcomes the defective that prior art exists, and the preparation method of selective transmission node crystal silicon solar battery is provided.The present invention adopts the method for typography printing corrosive agent to corrode on silicon dioxide layer and forms electrode window through ray, carries out the high concentration diffusion.Can effectively overcome the defective that prior art exists, reduce preparation cost greatly, satisfy the suitability for industrialized production purpose.
The preparation method of selective transmission node crystal silicon solar battery of the present invention, comprise the high-concentration dopant diffusion, it is characterized in that: adopt typography printing corrosive agent on the silicon dioxide layer of crystal silicon chip, corrosion forms electrode window through ray, then, in the electrode window through ray zone at POCl
3Carry out the high-concentration dopant diffusion in the atmosphere.
The present invention realizes another technical scheme of goal of the invention, the preparation method of selective transmission node crystal silicon solar battery, comprise high-concentration dopant diffusing step and low concentration doping the diffusion, it is characterized in that: with crystal silicon chip at POCl
3Carry out low concentration diffusion in the atmosphere, the crystal silicon chip Film by Thermal Oxidation silicon dioxide layer after diffusion adopts typography printing corrosive agent again on silicon dioxide layer then, and corrosion forms electrode window through ray, in the electrode window through ray zone at POCl
3Carry out the high-concentration dopant diffusion in the atmosphere.
The present invention realizes the 3rd technical scheme of goal of the invention, the preparation method of selective transmission node crystal silicon solar battery, comprise the diffusion of high-concentration dopant diffusing step and low concentration doping, it is characterized in that: at crystal silicon chip Film by Thermal Oxidation silicon dioxide layer, the thickness of silicon dioxide layer is 3nm～10nm; Adopt typography printing corrosive agent on the silicon dioxide layer of crystal silicon chip, corrosion forms electrode window through ray, then, to crystal silicon chip at POCl
3The diffusion of mixing in the atmosphere forms the high-concentration dopant diffusion in the electrode window through ray zone, doped in concentrations profiled diffusion that forms in other zone of crystal silicon chip.Adjusting when oxidated layer thickness does not spread variable concentrations simultaneously can reach by the adjusting to diffusion temperature, time and diffuse source flow.About the adjusting of this respect parameter, be the basic contents of diffusion technology, here no longer repeat, referring to some books or data about diffusion theory and process aspect.
The described typography printing corrosive agent that on the silicon dioxide layer of crystal silicon chip, adopts, the processing step that corrosion forms electrode window through ray is:
1, corrosive agent is printed onto the zone that the silicon chip surface that has silicon dioxide layer need be made electrode;
2, treat that corrosive agent will make the silicon chip surface silicon dioxide layer of electrode and fully erode the back silicon chip is cleaned, remove corrosive agent.
Described corrosive agent is that concentration is 10%～25% ammonium acid fluoride.
The employing typography printing corrosive agent forms of corrosion that the inventive method adopts etches the electrode pattern method with traditional employing photoetching technique and compares on silicon dioxide layer, equipment investment is low, the production efficiency height; Overcome the equipment investment costliness that photoetching technique has, production efficiency is low, produces the defective of difficulty in enormous quantities.
Description of drawings
The existing crystal-silicon solar cell manufacture craft flow chart of commercially producing of Fig. 1;
Fig. 2 current experiments chamber selective transmission node crystal silicon solar battery process chart;
Fig. 3 is preparation method's (first high concentration diffusion, back low concentration diffusion) of selective transmission node crystal silicon solar battery of the present invention;
Fig. 4, be the preparation method of selective transmission node crystal silicon solar battery of the present invention (first low concentration diffusion, back high concentration spreads);
The preparation method of Fig. 5, selective transmission node crystal silicon solar battery of the present invention (high and low concentration diffusion is carried out simultaneously).
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Embodiment 1: as shown in Figure 3, and the preparation method of selective transmission node crystal silicon solar battery.Elder generation's high concentration diffusion, back low concentration diffusion embodiment, its technical process is as follows:
1, removes the silicon chip surface damage, form deflection surfaces structure and chemical cleaning.
2, thermal oxide growth silicon dioxide layer.
3, adopt typography printing corrosive agent on the silicon dioxide layer of crystal silicon chip, corrosion forms electrode window through ray, then, in the electrode window through ray zone at POCl
3Carry out the high-concentration dopant diffusion in the atmosphere.The printing corrosive agent, the processing step that corrosion forms electrode window through ray is:
Corrosive agent is printed onto the silicon chip surface that has silicon dioxide layer need makes the zone of electrode (identical with the typography of printing positive and negative electrode, as to be used printing material difference); Treat that corrosive agent will make the silicon chip surface silicon dioxide layer of electrode and fully erode the back silicon chip is cleaned, remove corrosive agent.Described corrosive agent is that concentration is 10% ammonium acid fluoride.
4, at POCl
3Carry out the high concentration diffusion in the atmosphere.
5, remove silicon dioxide layer.
6, at POCl
3Carry out light diffusion in the atmosphere.
7, remove periphery and back side PN junction.
8, surface passivation and deposition antireflection layer.
9, printing positive and negative electrode and back of the body surface field, sintering.
Embodiment 2, as shown in Figure 4, the preparation method of selective transmission node crystal silicon solar battery.Elder generation's low concentration diffusion, back high concentration diffusion embodiment, its technical process is as follows:
The damage of removal silicon chip surface forms deflection surfaces structure and chemical cleaning.With crystal silicon chip at POCl
3Carry out low concentration diffusion in the atmosphere, the crystal silicon chip Film by Thermal Oxidation silicon dioxide layer after diffusion then needs to make the zone printing corrosive agent of electrode again on silicon dioxide layer, and described corrosive agent is that concentration is 25% ammonium acid fluoride., treat that corrosive agent will make the silicon chip surface silicon dioxide layer of electrode and fully erode the back silicon chip is cleaned, remove corrosive agent, form electrode window through ray.In the electrode window through ray zone at POCl
3Carry out the high-concentration dopant diffusion in the atmosphere.Remove silicon dioxide layer.Remove periphery and back side PN junction.Surface passivation and deposition antireflection layer.Printing positive and negative electrode and back of the body surface field, sintering.
Embodiment 3, as shown in Figure 5, the preparation method of selective transmission node crystal silicon solar battery.The embodiment that high and low concentration diffusion is carried out simultaneously, its processing step is as follows:
The damage of removal silicon chip surface forms deflection surfaces structure and chemical cleaning.At crystal silicon chip Film by Thermal Oxidation silicon dioxide layer, the thickness of silicon dioxide layer is 6nm; Adopt typography printing corrosive agent on the silicon dioxide layer of crystal silicon chip, described corrosive agent is that concentration is 20% ammonium acid fluoride, and corrosion forms electrode window through ray, then, to crystal silicon chip at POCl
3The diffusion of mixing in the atmosphere forms the high-concentration dopant diffusion in the electrode window through ray zone, doped in concentrations profiled diffusion that forms in other zone of crystal silicon chip.Remove periphery and back side PN junction.Surface passivation and deposition antireflection layer.Printing positive and negative electrode and back of the body surface field, sintering.
Embodiment 4, substantially the same manner as Example 3, different is that the thickness of silicon dioxide layer is 3nm.
Embodiment 5, substantially the same manner as Example 3, different is that the thickness of silicon dioxide layer is 10nm.
Claims (6)
1, a kind of preparation method of selective transmission node crystal silicon solar battery, comprise the high-concentration dopant diffusion, it is characterized in that: adopt typography printing corrosive agent on the silicon dioxide layer of crystal silicon chip, corrosion forms electrode window through ray, then, in the electrode window through ray zone at POCl
3Carry out the high-concentration dopant diffusion in the atmosphere.
2, the preparation method of selective transmission node crystal silicon solar battery according to claim 1 is characterized in that: the described typography printing corrosive agent that on the silicon dioxide layer of crystal silicon chip, adopts, and the processing step that corrosion forms electrode window through ray is:
A) corrosive agent is printed onto the zone that the silicon chip surface that has silicon dioxide layer need be made electrode;
B) treat that corrosive agent will make the silicon chip surface silicon dioxide layer of electrode and fully erode the back silicon chip is cleaned, remove corrosive agent;
Described corrosive agent is: concentration is 10%～25% ammonium acid fluoride.
3, a kind of preparation method of selective transmission node crystal silicon solar battery, comprise high-concentration dopant diffusing step and low concentration doping the diffusion, it is characterized in that: with crystal silicon chip at POCl
3Carry out the low concentration diffusion in the atmosphere, crystal silicon chip Film by Thermal Oxidation silicon dioxide layer after diffusion then, adopt typography printing corrosive agent again on silicon dioxide layer, corrosion forms electrode window through ray, carries out the high-concentration dopant diffusion in POCl3 atmosphere in the electrode window through ray zone.
4, the preparation method of selective transmission node crystal silicon solar battery according to claim 3 is characterized in that: the described typography printing corrosive agent that on the silicon dioxide layer of crystal silicon chip, adopts, and the processing step that corrosion forms electrode window through ray is:
A) corrosive agent is printed onto the zone that the silicon chip surface that has silicon dioxide layer need be made electrode;
B) treat that corrosive agent will make the silicon chip surface silicon dioxide layer of electrode and fully erode the back silicon chip is cleaned, remove corrosive agent;
Described corrosive agent is: concentration is 10%～25% ammonium acid fluoride.
5, a kind of preparation method of selective transmission node crystal silicon solar battery comprises the diffusion of high-concentration dopant diffusing step and low concentration doping, and it is characterized in that: at crystal silicon chip Film by Thermal Oxidation silicon dioxide layer, the thickness of silicon dioxide layer is 3nm～10nm; Adopt typography printing corrosive agent on the silicon dioxide layer of crystal silicon chip, corrosion forms electrode window through ray, then, to crystal silicon chip at POCl
3The diffusion of mixing in the atmosphere forms the high-concentration dopant diffusion in the electrode window through ray zone, doped in concentrations profiled diffusion that forms in other zone of crystal silicon chip.
6, the preparation method of selective transmission node crystal silicon solar battery according to claim 5 is characterized in that: the described typography printing corrosive agent that on the silicon dioxide layer of crystal silicon chip, adopts, and the processing step that corrosion forms electrode window through ray is:
A) corrosive agent is printed onto the zone that the silicon chip surface that has silicon dioxide layer need be made electrode;
B) treat that corrosive agent will make the silicon chip surface silicon dioxide layer of electrode and fully erode the back silicon chip is cleaned, remove corrosive agent;
Described corrosive agent is: concentration is 10%～25% ammonium acid fluoride.
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| CN104124305A (en) * | 2014-06-25 | 2014-10-29 | 上饶光电高科技有限公司 | Method for processing large series resistance of crystalline silicon solar cell |
| CN108336162A (en) * | 2018-02-08 | 2018-07-27 | 浙江晶科能源有限公司 | A kind of double-sided solar battery and its manufacturing method |
| CN111370539A (en) * | 2020-03-19 | 2020-07-03 | 泰州中来光电科技有限公司 | Preparation method of solar cell with selective emitter |
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