CN101740426A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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CN101740426A
CN101740426A CN200910208198.1A CN200910208198A CN101740426A CN 101740426 A CN101740426 A CN 101740426A CN 200910208198 A CN200910208198 A CN 200910208198A CN 101740426 A CN101740426 A CN 101740426A
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distribution
peristome
semiconductor substrate
solder layer
semiconductor device
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CN101740426B (zh
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须藤和之
富田弘明
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Sanyo Electric Co Ltd
System Solutions Co Ltd
On Semiconductor Niigata Co Ltd
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Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
Sanyo Semiconductor Manufacturing Co Ltd
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Abstract

本发明提供一种半导体装置的制造方法，当在形成于半导体基板的开口部上形成凸起电极时，防止形成由密闭在开口部内的气体造成的气孔。本半导体装置的制造方法具有如下工序：在半导体基板的主面侧形成第一配线(3)的工序；为了将第一配线(3)的背面露出，在半导体基板(1)自其背面侧朝向主面侧形成开口部(5)的工序；形成与第一配线(3)的背面连接且自开口部(5)内延伸至半导体基板(1)背面的第二配线(7)的工序；形成焊料层(8)的工序，该焊料层(8)与开口部(5)底部的第二配线(7)的一部分连接，并自开口部(5)内延伸至半导体基板(1)的背面；使焊料层(8)回流而在开口部(5)上形成凸起电极(9)的工序。

Description

半导体装置的制造方法
技术领域
本发明涉及一种半导体装置的制造方法，特别涉及特征在于具有在半导体基板的开口部上形成凸起电极的方法的半导体装置的制造方法。
背景技术
为了有效利用半导体基板的主面，引入如下技术，即，将与外部基板等电连接的结合用电极形成于半导体芯片的背面。此时，在形成于背面的电极上形成由焊料等构成的凸起电极28，这种技术随着CSP技术的发展而被采用并逐步普及。以下，基于图5说明该凸起电极28的形成方法。首先，如图5(a)所示，在半导体基板21的主面上隔着由氧化膜等构成的第一绝缘膜22形成第一配线23。接着，自半导体基板21的背面侧，以露出该第一配线23背面的方式在该半导体基板21形成开口部24。
接着，在所述开口部24和半导体基板21的背面上形成由氧化膜等构成的第二绝缘膜25，此后，使所述第一配线23的背面露出，并形成与该配线23的背面连接且自开口部24内延伸至背面的第二配线26。最后，利用丝网印刷法等在背面的包含开口部24的区域印刷焊料膏等而形成焊料层27，此后，如图5(b)所示，通过使焊料层27回流，形成与第一配线23连接的凸起电极28。另外，在第一配线23上形成有保护膜30。
在以下的专利文献1等中记载有如上所述的在半导体基板21的背面形成由焊料等构成的凸起电极28的技术。
专利文献1：(日本)特开2007-165696号公报
如前所述，在现有技术中，在半导体基板21的背面，以覆盖形成有与第一配线23连接的第二配线26的开口部24的方式，利用厚的焊料膏等形成有焊料层27。因此，引入到焊料膏等与开口部24之间的剩余的气体31在回流工序结束之后有时形成气孔29，因此，采取进行消泡处理的同时形成焊料层27等各种对策。另外，为了防止这样的不良状况和工时增加，也进行在自开口部24离开的位置形成凸起电极28的操作。当不采取该对策而产生气孔29时，由于此后向安装基板安装半导体基板21时的热处理循环和安装后半导体装置21等在使用中的发热，该气孔29反复进行膨胀收缩，从而引起在该部分产生裂纹等问题。另外，残留于气孔29内的来自焊料膏等内部的杂质也有可能腐蚀凸起电极29等。因此，产生如下课题：不导入消泡处理等额外的工序，即可抑制在凸起电极28内产生被引入的气孔29，并消除该问题。
发明内容
本发明的半导体装置的制造方法，其特征在于，具有如下工序：在半导体基板的主面隔着第一绝缘膜形成第一配线的工序；为了将所述第一配线露出，自所述半导体基板的背面，在该半导体基板形成开口部的工序；在所述开口部及所述背面上形成第二绝缘膜的工序；在所述第二绝缘膜上，形成与所述第一配线连接且自所述开口部内延伸至所述背面上的第二配线的工序；形成焊料层的工序，该焊料层与所述第一配线上的所述第二配线的一部分及自该第二配线的一部分延伸的所述开口部侧壁的所述第二配线连接，并延伸至包含所述第二配线的所述背面区域上；使所述焊料层回流的工序。
另外，本发明的半导体装置的制造方法的特征在于，所述焊料层形成在除所述开口部之外的所述半导体基板的、包含所述第二配线的所述背面上；所述焊料层在包含所述第二配线的所述背面区域上包围所述开口部而形成；所述焊料层利用丝网印刷法形成；所述焊料层利用散布法形成；所述开口部具有在所述背面侧宽而在主面侧变窄的倾斜面；所述开口部形成为圆筒状。
根据本发明的半导体装置的制造方法，可以抑制自半导体基板的背面侧朝向主面侧形成的开口部内的焊料凸起电极产生被引入的气孔。
附图说明
图1(a)、(b)、(c)是表示本发明实施方式的半导体装置的制造方法的剖面图；
图2是表示本发明实施方式的半导体装置的制造方法的剖面图；
图3(a)、(b)是表示本发明实施方式的半导体装置的制造方法的剖面图；
图4是表示本发明实施方式的半导体装置的制造方法的剖面图；
图5(a)、(b)是表示现有实施方式的半导体装置的制造方法的剖面图。
附图标记说明
1半导体基板    2第一绝缘膜  3第一配线
4绝缘膜        5开口部      6第二绝缘膜
7第二配线      8焊料层      9凸起电极
10粘接层       11支承体     12倾斜部
21半导体基板   22第一绝缘膜 23第一配线
24开口部       25第二绝缘膜 26第二配线   27焊料层
28凸起电极     29气孔       30保护膜     31剩余气体
具体实施方式
以下，基于附图说明本发明的半导体装置的制造方法。由于本发明的主要部分涉及形成于半导体基板1背面的凸起电极9，因此，在以下的附图中也省略了半导体基板1的整体记载，仅记载作为发明的主要部分的凸起电极9周围而进行说明。首先，如图1(a)所示，在半导体基板1的主面上隔着由氧化膜等构成的第一绝缘膜2形成第一配线3，在该半导体基板1的内部利用扩散处理等形成有各种半导体元件。第一配线3例如由以Al或Cu等为主体的金属层构成，与形成于半导体基板1内的半导体元件电连接，在第一配线3的表面上形成有用于保护的绝缘膜4。此时，如图1(b)所示，也可在绝缘膜4的上部隔着粘接层10形成由玻璃、硅、塑料等构成的支承体11。
接着，如图1(a)、(b)所示，经过规定的光刻工序，形成自半导体基板1的背面朝向主面的开口部5。如图1(c)所示，开口部5优选形成为具有倾斜部12，该倾斜部12在背面侧变宽且朝向主面侧而逐渐变窄。开口部5在半导体基板1的主面侧，隔着形成于第一配线3背面的下部的第一绝缘膜2与第一配线3的背面对置。接着，形成第二绝缘膜6，该第二绝缘膜6自开口部5的底部及侧壁部延伸至半导体基板1的背面。
接着，如图2所示，蚀刻除去开口部5底部的第一配线3背面上的第一绝缘膜2及第二绝缘膜6后，经过规定的工序形成第二配线7，该第二配线7与第一配线3连接且自开口部5内延伸到半导体基板1的背面。另外，第二配线7例如由以Al等为主体的金属层构成，在第二配线7上，例如形成有由Ni、Au等构成的未图示的电镀层。另外，所述第二配线7也可由以Cu为主体的金属层构成。
接着，如图3(a)所示，通过丝网印刷法或散布(デイスペンス)法等印刷焊料膏等，形成自开口部5内的一部分延伸至半导体基板1的背面的焊料层8。焊料层8与开口部5底部的第二配线7的一部分、自所述第二配线的一部分延伸的开口部侧壁的第二配线7以及半导体基板1背面的第二配线7连接。
如图3(a)所示，焊料层8即便形成至背面的不存在第二配线7的区域也没关系。相反，在增大焊料层8在背面上的宽度来确保回流后的凸起电极的高度的情况下，也可以将半导体基板1背面的凸起电极9的宽度形成得窄。这是因为，在接下来的回流工序中，焊料流入与其润湿性好的第二配线7上而从氧化膜上被除去。另外，如图3(b)所示，也可将焊料层8仅仅延伸至除开口部5之外的形成于半导体基板1背面上的第二配线7上及其外侧。此时，若在开口部5上以上部宽广且随着朝向内部而变窄的方式形成斜坡，则在焊料回流时，焊料顺畅地流入开口部5内，故这种方式是优选的。另外，基于同样的道理，优选将开口部5形成为没有角部的圆筒状。
最后，如图4所示，为了使焊料回流，以规定温度进行热处理，形成凸起电极9。如前所述，图3(a)的焊料层8熔解，利用其表面张力，表面变圆，并且润湿第二配线7，同时填充到开口部5内。自开口部5溢出的焊料一直流动到未形成焊料层8的背面上的第二配线7上。最后，在背面上的第二配线7端部形成具有该端部的凸起电极9。在该回流工序中，由于熔融焊料润湿第二配线7，同时填充开口部5，因此，在熔融焊料内不会引入气体，可以抑制在凸起电极9内形成气孔29。
此时，焊料层8不一定需要如图3(a)所示，形成为覆盖至开口部5内的一部分。如图3(b)所示，也可以形成为自开口部5外侧的半导体基板1背面上的第二配线7延伸至其外侧。在图3(b)中，在开口部5的两侧形成有焊料层8，但也可以仅在一侧形成。这是因为自焊料层8熔融的焊料润湿第二配线7，同时流入开口部5内，在开口部5不形成气孔而填充开口部5内部。在图3(b)的情况下，只要开口部5形成为圆形且开口部5的出口部分具有如图3(b)所示的斜坡，即便为开口直径小的开口部5，由于熔融的焊料顺畅地流动而填充开口部5内，因此，也能够有效形成无气孔的凸起电极9。
另外，本发明涉及将凸起电极9形成于半导体基板1背面侧的结构，但只要技术思想相同，则并不限于背面侧，不言而喻也可以适用于半导体基板1的主面侧。即，例如在以覆盖半导体基板1上的第一配线的方式形成的绝缘膜形成开口部，并使所述第一配线露出。另外，也可适用于如下工序，即在包含所述开口部的绝缘膜上形成与所述第一配线连接的第二配线，在所述第二配线上形成焊料层的工序。

Claims (7)

1.一种半导体装置的制造方法，其特征在于，具有如下工序：
在半导体基板的主面隔着第一绝缘膜形成第一配线的工序；
为了将所述第一配线露出，自所述半导体基板的背面，在该半导体基板形成开口部的工序；
在所述开口部及所述背面上形成第二绝缘膜的工序；
在所述第二绝缘膜上，形成与所述第一配线连接且自所述开口部内延伸至所述背面上的第二配线的工序；
形成焊料层的工序，该焊料层与所述第一配线上的所述第二配线的一部分及自该第二配线的一部分延伸的所述开口部侧壁的所述第二配线连接，并延伸至包含所述第二配线的所述背面区域上；
使所述焊料层回流的工序。
2.如权利要求1所述的半导体装置的制造方法，其特征在于，所述焊料层形成于除所述开口部之外的所述半导体基板的、包含所述第二配线的所述背面上。
3.如权利要求1或2所述的半导体装置的制造方法，其特征在于，所述焊料层在包含所述第二配线的所述背面区域上包围所述开口部而形成。
4.如权利要求1～3中任一项所述的半导体装置的制造方法，其特征在于，所述焊料层利用丝网印刷法形成。
5.如权利要求1～3中任一项所述的半导体装置的制造方法，其特征在于，所述焊料层利用散布法形成。
6.如权利要求1～5中任一项所述的半导体装置的制造方法，其特征在于，所述开口部具有在所述背面侧宽而在主面侧变窄的倾斜面。
7.如权利要求1～6中任一项所述的半导体装置的制造方法，其特征在于，所述开口部形成为圆筒状。
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