CN101726899B - 显示装置 - Google Patents
显示装置 Download PDFInfo
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- CN101726899B CN101726899B CN200910208124.8A CN200910208124A CN101726899B CN 101726899 B CN101726899 B CN 101726899B CN 200910208124 A CN200910208124 A CN 200910208124A CN 101726899 B CN101726899 B CN 101726899B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 112
- 239000012535 impurity Substances 0.000 claims description 207
- 230000007423 decrease Effects 0.000 claims description 21
- 239000010408 film Substances 0.000 abstract description 256
- 239000010409 thin film Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 30
- 239000000758 substrate Substances 0.000 description 26
- 230000005764 inhibitory process Effects 0.000 description 20
- 230000003321 amplification Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 17
- 238000003199 nucleic acid amplification method Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 12
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008280602A JP5312906B2 (ja) | 2008-10-30 | 2008-10-30 | 表示装置 |
JP2008-280602 | 2008-10-30 | ||
JP2008-280598 | 2008-10-30 | ||
JP2008280598A JP5371377B2 (ja) | 2008-10-30 | 2008-10-30 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101726899A CN101726899A (zh) | 2010-06-09 |
CN101726899B true CN101726899B (zh) | 2012-05-30 |
Family
ID=42130305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910208124.8A Active CN101726899B (zh) | 2008-10-30 | 2009-10-28 | 显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8124975B2 (zh) |
CN (1) | CN101726899B (zh) |
TW (1) | TWI420670B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101863941B1 (ko) * | 2010-06-08 | 2018-06-04 | 삼성디스플레이 주식회사 | 오프셋 구조의 박막 트랜지스터 |
KR20130011856A (ko) * | 2011-07-22 | 2013-01-30 | 삼성디스플레이 주식회사 | 표시기판 및 그 제조방법 |
JP2013069864A (ja) * | 2011-09-22 | 2013-04-18 | Canon Inc | 検出装置及び検出システム |
KR102046997B1 (ko) * | 2013-04-04 | 2019-11-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 유기 발광 표시 장치 |
CN105742294B (zh) * | 2016-03-23 | 2019-01-15 | 深圳市华星光电技术有限公司 | Tft基板的制作方法及制得的tft基板 |
CN113066868A (zh) * | 2021-04-25 | 2021-07-02 | 厦门天马微电子有限公司 | 薄膜晶体管、显示面板和显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1379276A (zh) * | 2001-03-30 | 2002-11-13 | 三洋电机株式会社 | 在各像素具备补助电容的动态矩阵型显示装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3593212B2 (ja) * | 1996-04-27 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2002057339A (ja) * | 2000-08-10 | 2002-02-22 | Sony Corp | 薄膜半導体装置 |
US6744288B1 (en) * | 2002-10-15 | 2004-06-01 | National Semiconductor Corporation | Driver with bulk switching MOS power transistor |
JP5266645B2 (ja) * | 2007-01-31 | 2013-08-21 | 三菱電機株式会社 | 薄膜トランジスタと該薄膜トランジスタを用いた表示装置 |
-
2009
- 2009-10-08 TW TW098134130A patent/TWI420670B/zh active
- 2009-10-28 CN CN200910208124.8A patent/CN101726899B/zh active Active
- 2009-10-29 US US12/608,147 patent/US8124975B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1379276A (zh) * | 2001-03-30 | 2002-11-13 | 三洋电机株式会社 | 在各像素具备补助电容的动态矩阵型显示装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI420670B (zh) | 2013-12-21 |
US20100109009A1 (en) | 2010-05-06 |
US8124975B2 (en) | 2012-02-28 |
TW201023367A (en) | 2010-06-16 |
CN101726899A (zh) | 2010-06-09 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: IPS ALPHA SUPPORT CO., LTD. Effective date: 20111129 Owner name: PANASONIC LCD CO., LTD. Free format text: FORMER OWNER: IPS ALPHA SUPPORT CO., LTD. Effective date: 20111129 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20111129 Address after: Chiba County, Japan Applicant after: Hitachi Displays, Ltd. Co-applicant after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Applicant before: Hitachi Displays, Ltd. Co-applicant before: IPS pioneer support society Effective date of registration: 20111129 Address after: Chiba County, Japan Applicant after: Hitachi Displays, Ltd. Co-applicant after: IPS Pioneer Support Society Address before: Chiba County, Japan Applicant before: Hitachi Displays, Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: APAN DISPLAY EAST, INC. Free format text: FORMER NAME: HITACHI DISPLAY CO., LTD. Owner name: JAPAN DISPLAY, INC. Free format text: FORMER NAME: APAN DISPLAY EAST, INC. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: Japan Display East Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. Address after: Chiba County, Japan Patentee after: Japan Display East Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: Hitachi Displays, Ltd. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: JAPAN DISPLAY Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20100609 Assignee: BOE TECHNOLOGY GROUP Co.,Ltd. Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd. Contract record no.: 2013990000688 Denomination of invention: Image display Granted publication date: 20120530 License type: Common License Record date: 20131016 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231012 Address after: Tokyo Patentee after: JAPAN DISPLAY Inc. Patentee after: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA Address before: Tokyo Patentee before: JAPAN DISPLAY Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |