CN101681876A - 使用短脉冲红外激光刻划晶片 - Google Patents
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Abstract
本发明对刻划晶片(300)提供高效率地烧蚀钝化层和/或封装层(302,304)的***和方法,同时降低或消除在钝化层和/或封装层(302,304)的碎屑和裂缝。短激光脉冲是用来提供高峰值功率和降低烧蚀阈值。在一个具体实施例中,是通过q开关的CO2激光执行刻划。
Description
技术领域
本申请涉及激光切割或刻划,特别涉及使用q开关激光来刻划完成的半导体晶片以降低或消除碎屑和裂缝的方法。
背景技术
集成电路(IC)通常制造在半导体基板之上或之中的数组中。IC通常包含形成在基板上的许多层。可以使用机械锯子或激光沿着刻划线或道(street)而使一个或多个层被移除。在刻划后,使用锯子或激光来使电路构件彼此分离,基板可以被切穿,有时候也被称作分切(dicing)。具有连续的机械锯子的激光刻划的组合也是用来分切。
然而,常用的机械切割或激光切割方法并不非常适合用来刻划许多预先完成好的芯片(例如,隔离层或封装层和/或低k介电质层)。在图1A至图1C中,图1B是使用常用锯子来在完成的晶片114、116、118中切割边缘110、112、113的电子显微照片。如所显示,完成的晶片的接近的边缘110、112、113被切削或断裂。相对较低的密度、缺少机械强度以及对热应力的敏感度,使得低k介电质材料对应力非常敏感。周知的是,常用的机械晶片分切与刻划技术造成低k材料的破裂、裂缝以及其它类型的缺陷,因此破坏IC组件。为了减少此类问题,则需降低切割速度。然而,此严重地降低了生产率。
激光刻划技术具有许多胜过机械锯子的优点。然而,熟知的激光技术会产生过量的热以及碎片。过量的热扩散会造成热影响区、重铸氧化层、过量的碎片以及其它问题。裂缝会形成在热影响区中,并会降低半导体晶片的晶粒破碎强度(die break strength)。因此,可靠性和产量降低。再者,碎片分散遍及半导体材料的表面各处,且会,举例来说,污染连接垫(bond pad)。此外,常用激光切割剖面会遭受激光喷溅出的材料的槽沟回填。当晶片的厚度增加,此回填会变得更严重并降低分切的速度。再者,在许多过程条件中,对于许多材料,喷溅出的回填材料会比起最初的目标材料更难以在随后的过程中被除去。因此,如果产生低质量的切割就会破坏IC组件且需要对基板上的组件进行的额外的清洁和/或广泛分离。
常用激光切割技术包含,举例来说,使用具有波长在中红外线范围的连续波(continuous wave;CW)CO2激光。然而,此CW激光难以聚焦且通常需要高能量来烧蚀IC处理材料。因此,产生过量热与碎片。脉冲CO2激光也已经被用来刻划。然而,此刻划技术通常用在微秒范围的长脉冲。因此,长脉冲产生低峰值功率且每脉冲的高能量用来烧蚀材料。因此,长脉冲允许过量的热扩散,从而造成热影响区、重铸氧化层、过量的碎片、碎屑和裂缝。
另一个常用激光刻划技术包含例如使用具有范围从大约1064纳米至大约266纳米的波长。然而,外部的钝化和/或封装层通常对于该些波长是部分地透明。举例来说,在这些波长的脉冲的第一部分可以穿过上部钝化层和/或封装层而不被烧蚀。因此,在上部钝化层和/或封装层会被激光烧蚀之前,随后的激光可以加热或激增。这样造成钝化层和/或封装层得以削去或破裂和散布碎片。图2A和2B是使用常用具有在皮秒范围的脉冲宽度的高斯激光脉冲所在晶片214、216刻划的截口210、212的电子显微照片。如图所示,晶片214、216靠近截口210、212的边缘是被切削和破裂的。
因此,降低或消除碎屑、裂缝及碎片与增加生产率并改善切割表面或截口质量的激光切割方法是所希望的。
发明内容
本发明提供激光刻划完成的晶片的方法,以有效率地烧蚀钝化层和/或封装层,同时降低或消除在钝化层和/或封装层的碎屑和裂缝。短激光脉冲是用来提供高峰值功率和降低烧蚀阈值。在一个具体实施例中,是通过q开关的CO2激光执行刻划。
在一个具体实施例中,提供具有复数个集成电路形成在其中或其上的基板的刻划的方法。集成电路是以一个或多个道而分离。该方法包含产生一个或多个具有波长和脉冲宽度持续期间的激光脉冲。选择波长,使得一个或多个脉冲是实质上被目标材料所吸收,该目标材料包含形成在基板上的钝化层和封装层中的至少一个。更进一步选择波长,使得基板对一个或多个脉冲是实质上透明的。选择脉冲宽度持续期间,以降低目标材料的烧蚀阈值。
在另一个具体实施例中,提供刻划半导体晶片的方法。该方法包含以一个或多个脉冲(该脉冲具有大约在9微米至大约11微米之间的波长范围)烧蚀形成在半导体晶片上的一个或多个层的部份。一个或多个激光脉冲具有在大约130纳秒至170纳秒之间的脉冲宽度持续期间。在一个具体实施例中,半导体晶片包含硅。在另一个具体实施例中,半导体晶片包含锗。
在接下来的优选具体实施例中将记载其它的方面与优势,随着参考附图而继续展开。
附图说明
图1A-1C是使用常用机械锯子来在完成的晶片中切割的截口的电子显微照片。
图2A和2B是使用具有波长分别大约在1064纳米和355纳米的激光在完成的晶片上刻划的截口的电子显微照片。
图3是根据本发明特定具体实施例的已被刻划的示范性工件的概略侧视图。
图4A和4B是解释根据常用激光刻划技术的图3所处理的工件的概略侧视图。
图5A和5B是解释根据本发明特定具体实施例的图3以q开关CO2激光所刻划的工件的概略侧视图。
图6A-6C是根据本发明的特定具体实施例,使用q开关CO2激光刻划穿过钝化层/封装层的截口的电子显微照片。
图7是根据本发明的特定具体实施例,使用q开关CO2激光和高斯皮秒脉冲激光射束刻划穿过钝化/封装层的截口的电子显微照片。
具体实施方式
材料吸收激光能量的能力决定该能量可以执行烧蚀的深度。烧蚀深度是由材料的吸收深度和材料的蒸发热度来决定。通过控制例如波长、脉冲宽度持续期间、脉冲重复频率以及射束质量的参数,来改善切割速度和切割表面或截口的质量。在一个具体实施例中,选择这些参数中的一个或多个,以增加在钝化层和/或封装层外部的能量烧蚀并降低要求来烧蚀钝化层/封装层和/或额外层(在此指的是「烧蚀阈值」)的能量密度的量(通常以焦耳/平方厘米来测量)。因此,可以降低或消除沉积进入材料的过量的能量总量。再者,使用较低能量密度减少或消除重铸氧化层、热影响区、碎屑、裂缝以及碎片。因此,提高了晶粒破碎强度且所需的后激光清洁总量下降。
在一个具体实施例中,激光脉冲具有范围在大约9微米至大约11微米的波长,其用来刻划完成的半导体晶片。在这些波长中,建构钝化层和封装层以吸收很大一部份的脉冲能量。因此,钝化层和封装层是在破裂和炸开(因为较低层的烧蚀)前被烧蚀。再者,硅基板在这些波长中吸收很少的脉冲能量。因此,非常少或是没有基板热到可以造成破裂。
激光脉冲具有范围在大约130纳秒至大约170纳秒之间的短脉冲宽度。在一个具体实施例中,q开关的CO2激光是用来产生激光脉冲。技术人员将会了解的是,q开关是通过调整激光孔穴的质量因子而用来从激光得到有力的短脉冲的技术。使用q开关的短脉冲CO2激光在晶片刻划和晶片分切处理期间消除或明显地降低碎屑和裂缝。
选择短脉冲宽度以提供比连续波(CW)脉冲的短脉冲宽度或长脉冲宽度更高的峰值能量。Mourou等人的美国专利第5,656,186号教示了材料的烧蚀阈值是激光脉冲宽度的函数。与短脉冲宽度的烧蚀阈值相比,CW脉冲或具有长脉冲宽度(例如:在微秒范围)的脉冲通常需要较高的烧蚀阈值。较短的脉冲增加了峰值功率且降低了热导。因此,使用短脉冲刻划完成的晶片是更有效率的。这项结果是较快的刻划处理。
为了方便性来说,术语“切割”通常会用来包含刻划(并没有穿透目标工件的整个深度而切割)及切穿,其包含切成薄片(通常与晶柱分离有关)或分切(dicing)(通常与由晶柱分割成部份有关)。切成薄片或分切在本发明文中是可互换使用的。
现在参考附图,其附图中相似的参考数字代表相似的组件。未来清楚地说明,参考数字的第一位数字指的是附图的编号,其中相对应组件最先被使用。在接下来的描述中,会提供数字特定的细节,以完全了解在此揭示的具体实施例。然而,本领域技术人员将会了解到本发明可以被实施而不需一个或多个的特定细节或其它方法、构件或材料。更进一步地,在某些情况下,未显示或详细叙述所熟知的结构、材料或操作,以避免模糊本发明的观念。再者,所述的特征、结构或特性会结合在任何适合的一个或多个具体实施例的方法中。
图3是根据本发明特定具体实施例的已被刻划的示范性工件300的概略侧视图。工件300包含形成在基板314上的第一层302、第二层304、第三层306、第四层308、第五层310及第六层312。如技术人员将会了解的是,层302、304、306、308、310、312会包含以绝缘层(包含低k介电质层)所分离的互连层,以形成电子电路。在此范例中,上方两个层302、304形成钝化层和封装层。举例来说,第一层302可以包含二氧化硅(SiO2),且第二层304可以包含氮化硅(SiYNX)。举例来说,第二层304可以包含Si3N4。技术人员将会了解的是,其它材料可以用来形成钝化层和/或封装层。
在此范例中,第三层306包含金属(例如:Cu或Al),第四层308包含介电质(例如:SiN),第五层310包含金属(例如:Cu或Al),且第六层312包含低k介电质(例如:SiN)。举例来说,低k介电材料可以包含无机材料(例如:SiOF或SiOB)或有机材料(例如:聚酰亚胺基(polyimide-based)或聚对二甲苯基(parylene-based)的聚合物)。技术人员将会了解的是,所讨论的层306、308、310、312的材料仅仅是举例且也可以使用其它形式。再者,技术人员将会了解的是,较多层或较少层可以被用在特定IC。如所显示,基板314包含硅(Si)。然而,技术人员也将会了解的是,其它在IC制造有用的材料可以使用在基板314,举例来说,包含玻璃、聚合物、金属、组合物以及其它材料。举例来说,基板314可以包含FR4。
如上所述,层302、304、306、308、310、312形成电子电路。各个电路通过线或道316(在图3显示成两条垂直破折线)而彼此分离。为了产生单个的IC,延着道316刻划、切穿(或两者皆使用)工件300。在特定具体实施例中,通过以激光脉冲射束来烧蚀一个或多个层302、304、306、308、310、312以刻划工件300。有利地,在此所述的激光刻划处理在道316的区域中产生具有实质上一致的侧壁的干净截口,且在道316的区域外仅具有一点或没有裂缝或碎屑,该裂缝或碎屑在典型激光刻划处理是常见的。
举例来说,图4A和4B是解释根据常用激光刻划技术的图3所处理的工件300的概略侧视图。图4A显示激光脉冲能量402(即,范围从大约1064纳米至大约266纳米的波长)穿过钝化层/封装层302、304,而仅有一点或没有烧蚀。更确切的说,在第三层306的区域406中吸收激光脉冲能量402,其造成区域406温度上升。最终,热造成区域406烧蚀或***。因此,部分的层302、304是被炸掉的。图4B大略地解释由***所产生的截口408。截口408不具有一致的侧壁并延伸(以碎屑)至道区域316的外部,其会破坏IC。如上所述,图2A和2B解释此类碎屑。
图5A和5B是解释根据本发明特定具体实施例的图3以q开关CO2激光所刻划的工件300的概略侧视图。CO2激光提供包含一系列激光脉冲的激光射束,其激光具有范围在大约9微米至大约11微米之间的波长,且脉冲宽度持续期间的范围在大约130纳秒至大约170纳秒之间。
建构钝化层/封装层302、304以吸收由CO2激光所产生的脉冲的能量。更进一步,短脉冲具有高峰值能量,其可以快速且有效率地烧蚀钝化层/封装层302、304,以产生干净的具有实质上一致的侧壁的截口。此外,硅基板314对由CO2激光所产生的脉冲波长来说是实质上透明的。因此,基板314吸收一点或没有吸收由CO2激光所产生的脉冲能量且只经受一点或没有经受热。
如图5A所示,在一个具体实施例中,CO2激光是通过烧蚀钝化层/封装层302、304来刻划工件300,以在道316的区域中造成截口502。截口502具有实质上一致的侧壁与实质上平坦的底部。在一些具体实施例中,由CO2激光所产生的波长在烧蚀钝化层/封装层302、304时,并不像在烧蚀金属时有效率(举例来说,层306、310)。因此,如图5A所示的具体实施例,CO2激光仅用来烧蚀钝化层/封装层302、304。
可以使用常用锯子或激光刻划技术来刻划剩余层306、308、310、312。举例来说,可以使用在皮秒范围的近红外线脉冲来刻划层306、308、310、312。也可以使用常用锯子和激光烧蚀技术来分切基板314。举例来说,具有大约266纳米波长的激光可以用来有效率且干净地分切基板314。
如图5B所示,在另一个具体实施例中,CO2激光是通过烧蚀层302、304、306、308、310、312来刻划工件300,以在道316的区域中造成截口504。再次地,截口504具有实质上一致的侧壁与实质上平坦的底部。虽然大约9微米至大约11微米之间的波长范围在烧蚀金属上是较无效率的,但他们仍可在足够的加热之后烧蚀金属。因此,在如图5B所显示的具体实施例,在此所讨论的CO2激光可以用来当成单一处理,以产生从第一层302的上部表面延伸至基板314的上部表面的截口504。如上所述,硅基版对范围在大约9微米至大约11微米之间的波长来说实质上是透明的。因此,使用CO2激光分切基板314是非常没有效率的。因此,在刻划之后,基板314可以使用常用锯子或是激光烧蚀技术来分切。
图6A-6C是根据本发明的特定具体实施例,使用q开关CO2激光刻划穿过钝化层/封装层的截口610、612、614的电子显微照片。如上所述,CO2激光所产生的激光脉冲具有大约在9微米至大约11微米之间的波长范围,且具有在大约130纳秒至170纳秒之间的脉冲宽度持续期间。在图6A-6C中,可以发现的是,只有一点或完全没有碎屑、裂缝或污染物。因此,达成了较高的晶粒破碎强度和整体处理生产量。
图7是根据本发明的具体实施例,使用q开关CO2激光和高斯皮秒脉冲激光射束刻划完成的半导体晶片708的电子显微照片。如图7所示,q开关CO2激光在完成的晶片708的钝化层/封装层刻划第一截口710。接着,高斯皮秒脉冲激光射束穿过完成的晶片708的额外层刻划第二截口712。针对解释性的目的,第二截口712也延伸越过在区域714的第一截口710。其中完成的晶片708首先是以q开关CO2激光刻划,截口710、712具有平滑的边缘并产生一点或不产生裂缝。然而,在不使用q开关CO2激光的区域714中,高斯皮秒脉冲激光在钝化层/封装层产生裂缝。
对于擅长此技术的人是明显的,对于上述具体实施例的细节,许多改变可以被实现,而不背离本发明的基本原则。因此,本发明的范畴应该仅能被下述的权利要求书的范围所决定。
Claims (20)
1.一种具有复数个集成电路形成在其中或其上的基板的刻划的方法,该集成电路是以一个或多个道而分离,该方法包括:
产生一个或多个具有波长和脉冲宽度持续期间的激光脉冲;
其中选择波长,使得一个或多个脉冲是实质上被目标材料所吸收,该目标材料包含形成在基板上的钝化层和封装层中的至少一个;
其中更进一步地选择波长,使得基板对一个或多个脉冲是实质上透明的;以及
其中选择脉冲宽度持续期间,以降低目标材料的烧蚀阈值。
2.如权利要求1所述的方法,更进一步包括以CO2激光产生一个或多个激光脉冲。
3.如权利要求2所述的方法,更进一步包括q开关CO2激光。
4.如权利要求1所述的方法,其中波长范围是在大约9微米至大约11微米之间。
5.如权利要求1所述的方法,其中脉冲宽度持续期间范围是在大约130纳秒至大约170纳秒之间。
6.如权利要求1所述的方法,其中钝化层和封装层的至少一个包含二氧化硅。
7.如权利要求1所述的方法,其中钝化层和封装层的至少一个包含氮化硅。
8.如权利要求1所述的方法,其中基板包含硅。
9.如权利要求1所述的方法,更进一步包括以一个或多个激光脉冲烧蚀形成在基板之上的部份金属层。
10.一种集成电路,其根据权利要求1所述的方法刻划。
11.一种刻划半导体晶片的方法,该方法包括:
以一个或多个脉冲烧蚀形成在半导体晶片上的一个或多个层的部份,该脉冲具有大约在9微米至大约11微米之间的波长范围;
其中一个或多个激光脉冲具有在大约130纳秒至170纳秒之间的脉冲宽度持续期间。
12.如权利要求11所述的方法,其中一个或多个层包含钝化层和封装层中的至少一个。
13.如权利要求12所述的方法,其中钝化层和封装层的至少一个包含二氧化硅。
14.如权利要求12所述的方法,其中钝化层和封装层的至少一个包含氮化硅。
15.如权利要求11所述的方法,更进一步包括使用CO2激光产生一个或多个激光脉冲。
16.如权利要求15所述的方法,更进一步包括q开关CO2激光。
17.如权利要求11所述的方法,更进一步包括以一个或多个激光脉冲烧蚀部份金属层。
18.如权利要求11所述的方法,其中半导体晶片对一个或多个脉冲是实质上透明的。
19.如权利要求18所述的方法,其中半导体晶片包含硅。
20.一种集成电路,其根据权利要求11所述的方法刻划。
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CN103650128A (zh) * | 2011-06-15 | 2014-03-19 | 应用材料公司 | 使用可物理性移除的遮罩的激光及等离子体蚀刻晶片切割 |
CN103703546A (zh) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | 使用具有等离子体蚀刻的混合式电流激光划线制程的晶片切割 |
CN103650128B (zh) * | 2011-06-15 | 2016-09-21 | 应用材料公司 | 使用可物理性移除的遮罩的激光及等离子体蚀刻晶片切割 |
CN103028844A (zh) * | 2011-10-06 | 2013-04-10 | 株式会社迪思科 | 层积有钝化膜的基板的烧蚀加工方法 |
CN103028844B (zh) * | 2011-10-06 | 2017-03-01 | 株式会社迪思科 | 层积有钝化膜的基板的烧蚀加工方法 |
CN104810323A (zh) * | 2014-01-29 | 2015-07-29 | 株式会社迪思科 | 半导体晶片的加工方法 |
Also Published As
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GB2452429A (en) | 2009-03-04 |
WO2008027634A2 (en) | 2008-03-06 |
GB0821326D0 (en) | 2008-12-31 |
US20070272666A1 (en) | 2007-11-29 |
WO2008027634A3 (en) | 2009-11-26 |
TW200802583A (en) | 2008-01-01 |
DE112007001278T5 (de) | 2009-05-07 |
JP2009544145A (ja) | 2009-12-10 |
KR20090013801A (ko) | 2009-02-05 |
TWI415180B (zh) | 2013-11-11 |
CN101681876B (zh) | 2011-04-13 |
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