CN101675537B - 半导体发光装置 - Google Patents

半导体发光装置 Download PDF

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CN101675537B
CN101675537B CN200880014272XA CN200880014272A CN101675537B CN 101675537 B CN101675537 B CN 101675537B CN 200880014272X A CN200880014272X A CN 200880014272XA CN 200880014272 A CN200880014272 A CN 200880014272A CN 101675537 B CN101675537 B CN 101675537B
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田中靖
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Rohm Co Ltd
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Abstract

本发明提供一种半导体发光装置。半导体发光装置(A1)包括基板(1)、在基板(1)上形成的两个电极(2A，2B)。在电极(2A)上，形成有芯片接合垫(2Aa)，LED芯片(3)通过银浆(6)与芯片接合垫(2Aa)芯片接合。芯片接合垫(2Aa)在基板(1)的厚度方向看时，其外缘位于LED芯片(3)的外缘的内侧。电极(2A)具备从芯片接合垫(2Aa)向LED芯片(3)的外侧延伸的伸出部(21)。

Description

半导体发光装置
技术领域
本发明涉及例如作为移动电话的光源被使用的半导体发光装置。此外，本发明涉及这样的半导体发光装置的制造方法。
背景技术
图5表示以往的半导体发光装置的一例(例如参照专利文献1)。该图所示的半导体发光装置X构成为在形成有一对电极92A、92B的基板91上接合有LED芯片93。LED芯片93和接合引线94被树脂封装95覆盖。电极92A包括芯片接合垫92Aa。LED芯片93通过银浆96与芯片接合垫92Aa芯片接合(die bonding)。电极92B包括用于将接合引线94接合的接合垫92Ba。
近年来，例如移动电话重点向小型化或薄型化发展。因此，对于作为移动电话的构成部件的半导体发光装置，薄型化的要求也很高。作为在半导体发光装置X实现薄型化的一个方法，考虑使LED芯片93变薄。但是，当要将薄的LED芯片93芯片接合在芯片接合垫92Aa上时，担心银浆96上溢到LED芯片93的上表面。如果这样，则存在电极92A与接合引线94短路的问题。
专利文献1：日本特开2001-196641号公报
发明内容
本发明是鉴于上述问题而完成的。本发明的目的在于提供适于实现薄型化的半导体发光装置。
本发明提供的半导体发光装置包括：基板；形成在上述基板的电极；和在上述电极所包括的芯片接合垫上通过导电性浆料芯片接合的半导体发光元件。上述芯片接合垫在上述基板的厚度方向看时，其外缘位于上述半导体发光元件的外缘的内侧。此外，上述电极包括从上述芯片接合垫向上述半导体发光元件的外侧伸出的伸出部。
根据这样的结构，上述导电性浆料的大部分存在于被上述芯片接合垫和上述半导体发光元件夹着的空间内。因为上述芯片接合垫不具有从上述半导体发光元件超出(溢出、凸出)的部分，所以能够抑制上述导电性浆料从上述半导体发光元件超出的情况。此外，即使在上述导电性浆料的量较多的情况下，多余的上述导电性浆料也会沿着上述伸出部扩展。从而，能够防止上述导电性浆料上溢至上述半导体发光元件的上表面。因此，能够使上述半导体发光元件较薄，实现上述半导体发光装置的薄型化。
优选上述半导体发光元件为矩形形状，上述伸出部在上述半导体发光元件的对角线方向上延伸，并且具有与上述芯片接合垫连接的带状部，和与该带状部相比位于前端侧、且宽度比上述带状部宽的宽幅部。根据这样的结构，即使上述导电性浆料从上述半导体发光元件超出，该上述导电性浆料也从上述半导体发光元件的角部朝向上述伸出部溢出。因此，能够防止上述导电性浆料沿着上述半导体发光元件的侧面上溢。此外，根据上述结构，能够使沿着上述伸出部溢出的上述导电性浆料滞留在上述较宽部。这样对于避免溢出的上述导电性浆料沿着上述基板进一步扩展而引起短路等是有利的。
优选上述导电性浆料的厚度和上述半导体发光元件的厚度之比为1∶5～1∶15。根据这样的结构，能够抑制上述导电性浆料的上溢，并且为了实现上述半导体发光装置的薄型化，能够采用足够薄的元件作为上述半导体发光元件。
本发明的其他特征和优点根据参照附图进行的以下的详细说明能够更加明白。
附图说明
图1是表示基于本发明的第一实施例的半导体发光装置的平面图。
图2是沿着图1的II-II线的截面图。
图3是表示上述第一实施例的半导体发光装置的主要部分的截面图。
图4是表示基于本发明的第二实施例的半导体发光装置的平面图。
图5是表示现有技术的半导体发光装置的一例的平面图。
具体实施方式
图1～图3表示基于本发明的第一实施例的半导体发光装置。图示的半导体发光装置A1包括：基板1，一对电极2A、2B，LED芯片3，接合引线4，和树脂封装5。在图1中，为了便于理解，用假想线表示树脂封装5。半导体发光装置A1的宽度为0.6mm，长度为1.0mm，厚度为0.2mm左右，小型且非常薄型。
基板1在平面视图中为大致矩形形状，是由例如玻璃环氧树脂构成的绝缘基板。在基板1的表面搭载有LED芯片3。基板1的背面是在将半导体发光装置A1面安装在电路基板等上时使用的安装面。在基板1的四角，形成有在基板1的厚度方向(图2的上下方向)上延伸的凹槽。基板1的厚度例如为0.08～0.1mm左右。
一对电极2A、2B夹着基板1的中央部分分别分开配置在基板1的两端边缘。电极2A、2B分别从基板1的表面经上述凹槽延伸至背面。各电极2A、2B中的覆盖基板1的背面的部分，被用作用于对半导体发光装置A1进行面安装的安装端子。一对电极2A、2B例如被形成为由Cu/Ni/Au构成的叠层有各镀层的结构。
在电极2A上形成有芯片接合垫2Aa和四个伸出部21。芯片接合垫2Aa是用于使用例如银浆6对LED芯片3进行芯片接合的部分，为大致正方形。芯片接合垫2Aa的中心与LED芯片3的中心大致一致，芯片接合垫2Aa的尺寸比LED芯片3的尺寸小。由此，在基板1的厚度方向看时，芯片接合垫2Aa的外缘位于LED芯片3的外缘的内侧(参照图1)。
伸出部21从接合垫2Aa在LED芯片3的对角线方向上延伸，具有带状部21a和宽幅部21b。带状部21a与接合垫2Aa连接，宽度大致一定。宽幅部21b形成在伸出部21的前端，其最大宽度比带状部21a的宽度大。在图示的例子中，宽幅部21b为菱形，但也可以为圆形等其他形状。
在电极2B形成有接合垫2Ba。接合垫2Ba是用于将接合引线4接合的部分。
LED芯片3是半导体发光装置A1的光源，例如能够发出可见光。具体而言，LED芯片3例如为pn型的半导体发光元件，在低面形成的n侧电极(省略图示)通过银浆6与电极2A导通。此外，形成在LED芯片3的上表面的p侧电极(省略图示)通过接合引线4与电极2B导通。LED芯片3为矩形形状。
如图3所示，芯片接合垫2Aa和LED芯片3例如通过银浆6接合。银浆6的厚度t1和LED芯片3的厚度t2为1∶5～1∶15的范围。例如，厚度t1为5～7μm，与此相对，厚度t2为40～75μm左右。
树脂封装5用于保护LED芯片3和接合引线4。树脂封装5使用对来自LED芯片3的光具有透光性的树脂(例如环氧树脂)被模塑成型。其中，作为树脂封装5，整体不限于由具有透光性的材质构成的树脂封装，例如也可以构成为具有反射从LED芯片3向侧面发出的光使其射向基板1的厚度方向的反射器。
接着，对半导体发光装置A1的作用进行说明。
根据上述第一实施例，如图3所示，银浆6的大部分存在于被芯片接合垫2Aa和LED芯片3夹着的空间内。因为芯片接合垫2Aa不具有从LED芯片3超出的部分，所以能够抑制银浆6从LED芯片3超出。此外，即使在银浆6的量较多的情况下，多余的银浆6也会如图1所示那样沿着伸出部21扩展。从而，能够防止银浆6上溢至LED芯片3的侧面，附着在与上表面连接的接合引线4上。因此，作为LED芯片3，能够使用较薄的芯片，实现半导体发光装置A1的薄型化。
此外，即使银浆6从LED芯片3超出，该银浆6也从LED芯片3的角部向伸出部21溢出。因此，能够防止银浆6沿着LED芯片3的侧面上溢。此外，能够使沿着伸出部21溢出的银浆6滞留在宽幅部21b。这适于防止溢出的银浆6沿着基板1到达电极2B。
进而，通过使银浆6的厚度t1和LED芯片3的厚度t2的比为1∶5～1∶15，能够抑制银浆6的上溢，并且为了实现半导体发光装置A1的薄型化能够采用足够薄的LED芯片3。即，当厚度t1、t2之比小于1∶5时，银浆6上溢至LED芯片3的上表面的可能性较大。另一方面，当厚度t1、t2的比大于1∶15时，银浆6的厚度不足以对LED芯片3适当地进行芯片接合。或者，LED芯片3的厚度变大，无法实现半导体发光装置A1的薄型化。
图4表示基于本发明的第2实施例的半导体发光装置。此外，在本图中，对与上述第一实施例相同或者相似的元素标注相同的符号。
图示的半导体发光装置A2在电极2A设置有两个伸出部21这点与上述第一实施例不同。这些伸出部21沿着LED芯片3的一方的对角线方向延伸。根据这样的结构，也能够适当地防止银浆6的上溢，实现半导体发光装置A2的薄型化。

Claims (2)

1.一种半导体发光装置，其包括：
基板；
在所述基板上形成的一对电极；和
半导体发光元件，其使用导电性浆料与形成于所述一对电极中的一个电极的芯片接合垫芯片接合，
该半导体发光装置的特征在于：
所述一个电极的芯片接合垫的中心与所述半导体发光元件的中心大致一致，在所述基板的厚度方向上看时，所述芯片接合垫的外缘位于所述半导体发光元件的外缘的内侧，
所述一个电极还包括从所述芯片接合垫向所述半导体发光元件的外侧伸出的伸出部，
所述半导体发光元件为矩形形状，
所述伸出部在所述半导体发光元件的对角线方向上延伸，
所述伸出部具有与所述芯片接合垫连接的带状部，和与该带状部相比位于前端侧、且宽度比所述带状部宽的宽幅部。
2.如权利要求1所述的半导体发光装置，其特征在于：
所述导电性浆料的厚度与所述半导体发光元件的厚度之比为1∶5～1∶15。
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