CN101665234A - Preparation technology for low-cost large-area nanoimprinting template with photonic crystal structure - Google Patents
Preparation technology for low-cost large-area nanoimprinting template with photonic crystal structure Download PDFInfo
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- CN101665234A CN101665234A CN 200810042412 CN200810042412A CN101665234A CN 101665234 A CN101665234 A CN 101665234A CN 200810042412 CN200810042412 CN 200810042412 CN 200810042412 A CN200810042412 A CN 200810042412A CN 101665234 A CN101665234 A CN 101665234A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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Abstract
The invention discloses preparation technology for a low-cost large-area nanoimprinting template with a photonic crystal structure, which relates to a structure and preparation technology of the template. The structure of the template is a periodic nano-convex photonic crystal structure which is two-dimensionally and alternately arranged. The preparation technology for the template comprises the steps of: (1) coating a layer of metal chromium and an electron beam optical resist on the surface of quartz, and utilizing electron beam exposure technology and development technology to form a micron-sized round hole-shaped photonic crystal structure which is two-dimensionally and alternately arranged on the surface of the resist, wherein the duty ratio is 1: 1; (2) utilizing a reactive particleetching process to transfer a pattern on the surface of the resist to a chromium layer, taking the chromium layer as a barrier layer to transfer the pattern to the surface of a quartz substrate, and then removing the resist on the surface of the quartz, wherein a structure transferred to the surface of quartz glass is the micron-sized round hole-shaped photonic crystal structure which is two-dimensionally and alternately arranged (a female template); and (3) configuring a BOE etching solution (40 percent NH4F: 49 percent HF is equal to 5: 1), placing the female quartz template into the BOE etching solution, controlling the temperature to be between 20 and 25 DEG C, performing ultrasonic treatment for 5 to 8 minutes, and then converting the micron-sized round hole-shaped photonic crystal periodic structure (the female template) which is two-dimensionally and alternately arranged on the surface of the quartz glass to a nano-convex photonic crystal periodic structure (a male template) which is two-dimensionally and alternately arranged, wherein the dimension of convexity is between 90 and 300nm and is adjustable, the depth is controlled to be between 100 and 200nm.
Description
Technical field
A kind of technology of preparing with large-area nano impression formboard of photon crystal structure relates to the structure and the technology of preparing of masterplate, belongs to technical field of nano-processing.
Background technology
Nanometer embossing is a kind of nanostructured figure transfer techniques of novelty, is one of nano-fabrication technique of now tool prospect, becomes the basic fundamental of following submicron electronics and photoelectronic industry probably.Have only and realize nanostructured graph transfer method and technology low-cost, that have the volume production ability, just can make nano-fabrication technique enter industrial production.The nano impression exposure technique is included into the international semiconductor blueprint, is used for 32 nanometers.
Nano impression exposure technique, figure are to go up the transfer of realization figure by pushing the seal (nano impression formboard) with nano concavo-convex structure to the substrate that is applying polymer foil (nano impression substrate).Platen assembly to nano impression formboard and nano impression substrate formation heats or ultraviolet irradiation (corresponding two kinds of nano-imprint process of generally acknowledging in the world), after seal is removed, stays the impression of original concavo-convex nanostructured figure on the substrate.These technologies are carried out in small-sized easy operating and complete computer-controlled device, and each substrate impression flow process only needs a few minutes.Fig. 1 is based on the nano-imprint process flow process of hot pressing and based on the nano-imprint process flow process of ultra-violet curing relatively.
For the nano-imprint process based on hot pressing, its Embosser and masterplate are realized easily based on the nano-imprint process of ultra-violet curing.For the nano-imprint process based on ultra-violet curing, owing to be the curing that realizes the polymer foil nanostructured by ultraviolet ray, therefore, masterplate must see through ultraviolet ray.Simultaneously, owing to be nanostructured, masterplate must have certain degree of hardness, generally is to adopt quartzy masterplate, and substrate can be silicon chip or other material.Masterplate is the core component of nano-imprint process.
But realize the nanostructured stamp transfer broad application of low cost volume production, the preparation of nanostructured impression formboard is its core technology and uses bottleneck, also is the most expensive part of price in the nanometer embossing whole process flow.Electron beam exposure and plasma etching technology are adopted in existing nano impression formboard preparation.
In electron beam lithography, focused beam needs to realize the pointwise exposure by scan mode, therefore, even be 1 millimeter of 1 millimeter X, structure minimum dimension nano impression formboard, often also need several hours sweep time in the nano-dot matrix structure of 100 nanometers for the nanostructured graphics area.Equipment and efficient all cause price very expensive.At present, have only a few studies mechanism can prepare nano impression formboard in the world, 1～2 company provides the service of commercialization processing and preparing, for example, Denmark NILT specialty nano impression formboard prepared company in 2008, for the nanostructured graphics area is 1 millimeter of 1 millimeter X, the structure minimum dimension nano-dot matrix structure nano impression formboard in 100 nanometers, and price is at 7500 dollars.
The masterplate that ultraviolet stamping is used need be transparent to ultraviolet band, and commonly used is quartz substrate.Utilize electron beam lithography, earlier figure is write on the photoresist, transfer on the quartz substrate by lithographic technique again.Utilize this method on quartz substrate, to make up the nanostructured figure, length consuming time, the cost height can't prepare the large tracts of land masterplate, has become one of main bottleneck of nanometer embossing development at present.
Therefore, research and development low cost, large-area ultraviolet nanometer impression formboard become one of the main direction in current nanometer embossing field.
Summary of the invention
The objective of the invention is to overcome existing electron beam exposure and prepare nano impression formboard in deficiencies such as manufacturing cost height, graphics area are little, adopt custom integrated circuit mask version manufacturing technology, invented a kind of low cost, large tracts of land has the technology of preparing of the nano impression formboard of photon crystal structure, relates to the structure and the technology of preparing of masterplate.The structure of masterplate is two-dimentional staggered periodicity nano projection photon crystal structure, sees Fig. 2.
According to subsequent preparation technology, the structure of initial masterplate need be carried out particular design.Obtain protruding photon crystal structure masterplate, initial masterplate need be a periodically photon crystal structure of two-dimentional staggered circular hole, and dutycycle is 1: 1, and the degree of depth is 1 μ～2 μ, area with appointed condition 1 inch～12 inches adjustable, as Fig. 3.Have periodically photon crystal structure masterplate of two-dimentional staggered circular hole, be called the former version, periodic structure is of a size of micron order; Next, utilize appropriate wet-etching technology, the former version that will have two-dimentional staggered circular hole periodicity photon crystal structure converts the formpiston version with two-dimentional staggered periodicity bulge-structure to, and the size of dwindling structure simultaneously is to nanoscale.
Characteristics of the present invention are: in conjunction with existing microelectronics masterplate preparation technology and wet-etching technology, by structural design and technology controlling and process cleverly, prepared two-dimentional staggered nano impression formboard, provide a kind of large tracts of land the low-cost method for preparing nano impression formboard with periodicity projection photon crystal structure of nano-scale.
According to the photonic crystal theory, the sub-wavelength photo crystal thick structure is to the light wave antireflection, be that the sub-wavelength photo crystal thick structure is determined the light wave energy band density by photonic crystal the anti-reflection efficient of light wave owing to have photonic band gap in the periodic structure of structure less than wavelength.The staggered periodicity nano projection of two dimension of the present invention photon crystal structure, can intuitively see as is the staggered superposition of two layers of two-dimensional and periodic bulge-structure, has therefore increased the energy band density of photonic crystal to light wave.This structure has antireflection.
Description of drawings:
Two kinds of nano-imprint process flow processs of Fig. 1 relatively
The staggered periodicity nano projection photon crystal structure schematic top plan view of Fig. 2 two dimension
The staggered circular hole of Fig. 3 two dimension is photon crystal structure (former version) schematic top plan view periodically
Fig. 4 preparation process schematic diagram of the present invention
Fig. 5 is from the face south conversion process schematic diagram of masterplate of former version
Fig. 6 is from former version SEM and the AFM figure that masterplate transforms that face south
Fig. 7 periodicity nano projection photon crystal structure is transferred to the SEM figure on photoresist surface
Specific embodiments of the present invention
One, the preparation of former version:
(1) at 1 inch quartz surfaces coating layer of metal chromium and electron beam resist, utilize electron beam lithography and developing technique to form two-dimentional staggered micron order circular hole photon crystal structure on the photoresist surface, dutycycle is 1: 1;
(2) utilize the reaction particle etching technics that the figure on photoresist surface is transferred to the chromium layer, be the barrier layer with the chromium layer again, figure is transferred to the quartz substrate surface, remove the photoresist of quartz surfaces then, the structure of transferring to the quartz glass surface is a two-dimentional staggered micron order circular hole photon crystal structure (former version).
Two, the former version is converted into the formpiston version, simultaneously minification
Configuration BOE etching solution (40%NH4F: 49%HF=5: 1), quartzy former version is placed in the BOE etching solution, temperature is controlled at 20 ℃～25 ℃, ultrasonic, after 5～8 minutes, the quartz glass two-dimentional staggered micron order hole type photon crystal structure in surface (former version) just is converted to two-dimentional staggered nanoscale and has tower bulge-structure photon crystal structure (formpiston version), the size of tower projection is adjustable in 90～300 nanometers, the degree of depth is controlled at 100～200 nanometers, and cycle and former version cycle remain unchanged.
The preparation process schematic diagram is seen Fig. 4, and negative template is seen Fig. 5, Fig. 6 to the schematic diagram of force plate conversion and SEM, the AFM figure of pilot process.
Photonic crystal is widely used.Photon crystal structure nano impression formboard by the inventive method preparation, adopt the photon crystal structure of nanometer embossing preparation, strengthen surface, the anti-reflection surface of optics, super hydrophobic surface etc. in high-resolution lithographic plate display surface, LED luminous efficiency and have important application.
Applicating example 1:
The photoresist of coating one deck ultra-violet curing on silicon chip, has the periodicity tower projection photon crystal structure of nano-scale as masterplate with the two-dimentional staggered of said process preparation, by the ultraviolet nanometer moulding process, can successfully the structure on the masterplate be transferred on the photoresist, see Fig. 7.
Applicating example 2:
Be used in solar cell surface, improve absorptivity sun light wave.On the antireflective coating of solar cell surface, directly impress this periodicity tower projection photon crystal structure, can reduce the reflection of sunshine on the surface, increase transmission, thereby improve the utilization ratio of solar cell light wave.
Claims (3)
1. large-area nano impression formboard technology of preparing with photon crystal structure, structure is two-dimentional staggered periodicity nano projection photon crystal structure, and bump sizes is tens to the hundreds of nanometer, and the cycle is 1～2 micron.
2. the staggered periodicity nano projection of two dimension according to claim 1 photon crystal structure, its technology of preparing comprises that being etched in quartz surfaces formation with electron beam exposure and reaction particle earlier has two-dimentional staggered micron order circular hole photonic crystal former plate structure, utilize appropriate wet-etching technology then, the former version is converted to series of processes such as two-dimentional staggered periodicity nano projection photon crystal structure.
3. in the series of processes of technology of preparing according to claim 2, wet-etching technology comprises that the proportioning of etching solution is: 40%NH4F: 49%HF=5: 1, and temperature is controlled to be 20 ℃, and etch period is 5-8 minute, carries out under the ultrasound condition.
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Cited By (11)
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| CN101814564A (en) * | 2010-03-11 | 2010-08-25 | 上海蓝光科技有限公司 | Method for preparing epitaxial growing nano pattern substrate of nitride |
| CN102157645A (en) * | 2011-02-10 | 2011-08-17 | 武汉迪源光电科技有限公司 | Light emitting diode and preparation method thereof |
| CN102183809A (en) * | 2011-05-09 | 2011-09-14 | 苏州光舵微纳科技有限公司 | Manufacturing method of laser holographic lens |
| CN102263145A (en) * | 2011-08-26 | 2011-11-30 | 苏州瑞晟太阳能科技有限公司 | CIGS (CuInGaSe) solar photocell and manufacturing method thereof |
| CN102279518A (en) * | 2011-06-12 | 2011-12-14 | 华北电力大学（保定） | Method for manufacturing metal doped full space or quasi-full space photonic crystal |
| CN103367655A (en) * | 2013-07-17 | 2013-10-23 | 五邑大学 | High luminance OLED based on photonic crystal microstructure substrate and manufacturing method thereof |
| CN103488046A (en) * | 2013-09-26 | 2014-01-01 | 上海集成电路研发中心有限公司 | Nano imprint lithography device and method thereof |
| CN103730339A (en) * | 2013-12-27 | 2014-04-16 | 华中科技大学 | Methods for manufacturing micro/nano scale pattern stamping die |
| CN103972324A (en) * | 2013-02-01 | 2014-08-06 | 上海交通大学 | Silicon film solar cell surface light trapping structure preparing method based on nano imprinting |
| CN106527043A (en) * | 2016-11-22 | 2017-03-22 | 同济大学 | Method for fabricating large-area photonic crystal s scintillation body by imprinting technology |
| CN114852954A (en) * | 2022-04-19 | 2022-08-05 | 广东省科学院生物与医学工程研究所 | Preparation method of ordered monocrystalline silicon pyramid microstructure |
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2008
- 2008-09-03 CN CN 200810042412 patent/CN101665234A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101814564A (en) * | 2010-03-11 | 2010-08-25 | 上海蓝光科技有限公司 | Method for preparing epitaxial growing nano pattern substrate of nitride |
| CN101814564B (en) * | 2010-03-11 | 2013-07-31 | 上海蓝光科技有限公司 | Method for preparing epitaxial growing nano pattern substrate of nitride |
| CN102157645A (en) * | 2011-02-10 | 2011-08-17 | 武汉迪源光电科技有限公司 | Light emitting diode and preparation method thereof |
| CN102183809A (en) * | 2011-05-09 | 2011-09-14 | 苏州光舵微纳科技有限公司 | Manufacturing method of laser holographic lens |
| CN102279518A (en) * | 2011-06-12 | 2011-12-14 | 华北电力大学（保定） | Method for manufacturing metal doped full space or quasi-full space photonic crystal |
| CN102279518B (en) * | 2011-06-12 | 2012-08-08 | 华北电力大学（保定） | Method for manufacturing metal doped full space or quasi-full space photonic crystal |
| CN102263145A (en) * | 2011-08-26 | 2011-11-30 | 苏州瑞晟太阳能科技有限公司 | CIGS (CuInGaSe) solar photocell and manufacturing method thereof |
| CN103972324B (en) * | 2013-02-01 | 2016-08-17 | 上海交通大学 | Silicon-film solar-cell surface based on nano impression light trapping structure preparation method |
| CN103972324A (en) * | 2013-02-01 | 2014-08-06 | 上海交通大学 | Silicon film solar cell surface light trapping structure preparing method based on nano imprinting |
| CN103367655A (en) * | 2013-07-17 | 2013-10-23 | 五邑大学 | High luminance OLED based on photonic crystal microstructure substrate and manufacturing method thereof |
| CN103488046A (en) * | 2013-09-26 | 2014-01-01 | 上海集成电路研发中心有限公司 | Nano imprint lithography device and method thereof |
| CN103488046B (en) * | 2013-09-26 | 2019-10-22 | 上海集成电路研发中心有限公司 | A kind of nano-imprint lithography devices and methods therefor |
| CN103730339A (en) * | 2013-12-27 | 2014-04-16 | 华中科技大学 | Methods for manufacturing micro/nano scale pattern stamping die |
| CN103730339B (en) * | 2013-12-27 | 2016-06-29 | 华中科技大学 | The manufacture method of micro/nano-scale figure stricture of vagina impressing mould |
| CN106527043A (en) * | 2016-11-22 | 2017-03-22 | 同济大学 | Method for fabricating large-area photonic crystal s scintillation body by imprinting technology |
| CN106527043B (en) * | 2016-11-22 | 2018-07-03 | 同济大学 | A kind of method that stamping technique prepares large area photon scintillation crystal |
| CN114852954A (en) * | 2022-04-19 | 2022-08-05 | 广东省科学院生物与医学工程研究所 | Preparation method of ordered monocrystalline silicon pyramid microstructure |
| CN114852954B (en) * | 2022-04-19 | 2024-04-02 | 广东省科学院生物与医学工程研究所 | Preparation method of ordered monocrystalline silicon pyramid microstructure |
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Application publication date: 20100310 |