TWI342986B - Optical thermal nano-imprinting process - Google Patents
Optical thermal nano-imprinting process Download PDFInfo
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- TWI342986B TWI342986B TW95117177A TW95117177A TWI342986B TW I342986 B TWI342986 B TW I342986B TW 95117177 A TW95117177 A TW 95117177A TW 95117177 A TW95117177 A TW 95117177A TW I342986 B TWI342986 B TW I342986B
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1342986 九、發明說明 【發明所屬之技術領域】 本發明是有關於一種奈米熱塵印（nano_imprinting)製 ，程’且特別是有關於一種雷射輔助（Laser assisted)奈米熱壓印 製程。 【先前技術】BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nano-imprinting process, and more particularly to a laser assisted nano-hot stamping process. [Prior Art]
目别常見之壓印技術主要有熱壓印及雷射輔助壓印技 術。熱壓印技術與雷射輔助壓印技術分別是利用電阻式或準 刀子雷射’透過石英等透明材料的模仁，加熱基板或是基板 上的材料，接著將模仁壓入基板或基板上之材料中，使模仁 上的圖形轉印至基板或基板上的材料。 然而’熱壓印及雷射輔助壓印技術分別有其缺點存在。 首先針對熱壓印技術，在此壓印技術中，將基板上之高分子 材料由室溫加熱至玻璃轉換溫度以上，再回復至室溫所需時 間往往需要幾十分鐘以上，無論是升溫亦或是降溫均相當耗 時’十分不利於大量生產。至於雷射輔助壓印技術，由於此 壓印技術所使用之模仁為石英等透明材料，因此其模仁成本 較尚且表面加工不易’導致蝕刻後所得之模仁圖案的深寬較 小。如此一來，在壓印過程中’基板上之高分子材料受到壓 印之永度不深，而不易後續的基板姓刻動作。此外，由於棋 仁材料為絕緣體，因此在定義奈米圖形時若使用電子束微影 技術（E-Beam Lithography) ’則模仁易產生電荷累積效應，但 是電子束微影技術卻又是目前定義奈米圖形時最廣為採用之 5 1342986 :” 了改。上述缺點’目前發展出 印技術來取代熱壓印及雷射輔助壓印。雖然目輔助壓 紅外光脈衝雷射輔助壓印製程有 、'、月〗經顯不出 形，由…卜光脈: = =大小的圖 子材料之玻璃轉換溫度—要: =璃轉換溫度的高分子材料’因此在大面積的轉印上較‘Commonly used imprinting techniques include hot stamping and laser assisted imprinting. Hot embossing technology and laser-assisted embossing technology use resistive or quasi-knife lasers to pass through a transparent material such as quartz to heat the substrate or the material on the substrate, and then press the mold into the substrate or substrate. In the material, the pattern on the mold is transferred to the material on the substrate or substrate. However, 'hot stamping and laser assisted imprinting techniques have their own shortcomings. Firstly, for hot stamping technology, in this imprinting technology, the polymer material on the substrate is heated from room temperature to above the glass transition temperature, and the time required to return to room temperature often takes several tens of minutes or more. Whether the cooling is quite time-consuming is very unfavorable for mass production. As for the laser-assisted imprinting technique, since the mold used in the imprint technique is a transparent material such as quartz, the cost of the mold core is relatively high and the surface processing is difficult, resulting in a small width of the mold pattern obtained after etching. In this way, the imprinting of the polymer material on the substrate during the imprinting process is not deep, and it is not easy to follow the substrate. In addition, since the chess material is an insulator, if the electron beam lithography technique (E-Beam Lithography) is used in defining the nano pattern, the mold is prone to charge accumulation, but the electron beam lithography is currently defined. The most widely used nanographs are 5 1342986: "The change. The above shortcomings" are currently developing printing technology to replace hot stamping and laser assisted imprinting. Although the auxiliary assisted infrared pulse laser assisted imprinting process has , ', month〗 by the appearance of the shape, by ... Bu Guangmai: = = size of the glass material conversion temperature of the material - to: = glass conversion temperature of the polymer material 'so in the large area of the transfer
【發明内容】 有鑑於上述已知技術的種種缺失，並克服這些壓印技術 的困難點，本發明之目的就是在提供一種光學式奈米熱壓印 製程，可以較低的雷射能量來進行轉印的技術。 本發明之另一目的就是在提供一種光學式奈米熱壓印製 程，其對模仁之圖案表面進行表面改質而形成加熱光源吸收 層，可大幅改善模仁表面對於加熱光源的吸收，而有效提升 %模仁吸收加熱光源的效能，使模仁瞬間達到壓印材料所需的 破璃轉換溫度，相當有利於大量生產，具有極佳之量產性。 本發明之再一目的是在提供一種光學式奈米熱虔印製 心’其模仁之圖案表面覆設有加熱光源吸收層，因此可有效 提南其熱傳導速率’而可提升雷射輔助壓印技術中壓印時的 溫度’不僅可促使圖形轉印更易達成，更可降低雷射所需能 星’進而可克服雷射輔助麼印技術大面積化的固難點，達到 製作大面積、快速及量產化的奈米圖形的元件。 6 本發明之又— 程，其模仁可操用功U、、是在提供一種光學式奈米熱壓印製 且在模仁材料 因此模仁之製程容易、成本低廉、 變化及曰故& 也具有多樣性，從而可利用材料上的 製作模仁卜性來製作出多樣化及三維化的圖案，故不僅在 之變化性。可輕易獲得所需的結構，更可增加奈米壓印技術 根據本發明之上述目的’提出一種光學式奈米熱壓印製 ’至少句紅· # 4SUMMARY OF THE INVENTION In view of the various shortcomings of the above known techniques and overcoming the difficulties of these imprinting techniques, the object of the present invention is to provide an optical nanoimprinting process that can perform lower laser energy. Transfer technology. Another object of the present invention is to provide an optical nano-embossing process for surface modification of a pattern surface of a mold to form an absorption layer of a heating source, which can greatly improve the absorption of the surface of the mold by the heating source, and is effective. Increasing the efficiency of the absorption of the heating source by the % mold core, so that the mold core instantaneously reaches the glass transition temperature required for the imprint material, which is quite advantageous for mass production and has excellent mass production. A further object of the present invention is to provide an optical nano-hot stamping core whose pattern surface is covered with a heating source absorbing layer, thereby effectively improving the heat transfer rate of the south and enhancing the laser-assisted embossing The temperature in the technology of imprinting not only promotes the transfer of the pattern transfer, but also reduces the energy required for the laser. It can overcome the difficulty of laser-assisted printing technology and achieve large-area and fast production. A component of a mass produced nanograph. 6 The method of the present invention, the mold can be used to operate the U, is to provide an optical nano-hot stamping and in the mold core material, the mold process is easy, low cost, change and failure & With a variety of versatility, it is possible to create a variety of patterns and three-dimensional patterns by using the material on the material, so it is not only variability. The desired structure can be easily obtained, and the nanoimprint technique can be further increased. According to the above object of the present invention, an optical nano-hot stamping is proposed, which is at least sentence red. #4
’ it供模仁’其中此模仁具有相對之第 _表面以；5 笙-电·》·' it for the mold', where the mold has the opposite _ surface to; 5 笙- electricity · ··
— 面，且此模仁之第一表面設有一壓印圖 y L接下來，形成—加熱光源吸收層於模仁之第一表面上； 並提供基板，此基板具有相對之第__表面以及第三表面其 中此基板之第一表面上設有一高分子材料層；接著，將模仁 放置在基板上，並使模仁之第一表面與基板之第一表面彼此 相對，然後從基板之第二表面對該基板施加預壓力；接著， 提供一加熱光源，使加熱光源從模仁之第二表面朝第一表面 入射光’以加熱模仁與加熱光源吸收層；將模仁之壓印圖案 轉印至高分子材料層中；接著，移除模仁。 依照本發明一較佳實施例’形成加熱光源吸收層之步驟 係利用塗佈法（coating)、印刷法（Printing)、物理沉積法 (Physical Deposition)、化學沉積法（Chemical Deposition)或離 子佈植法（Ion Implantation)法。此外，加熱光源吸收層係一金 屬層。 【實施方式】 7 1342986 本發明揭露-種光學式奈米熱壓印製程，可以較低的雷 射能量來進行轉印，且可應用在較高玻璃轉換溫度之高分子 材料或光阻劑上，可使壓印技術達大面積化，並具有低成本、 .‘快速且可量產化的優勢。為了使本發明之敘述更加詳盡與完 ，備，可參照下列描述並配合第1圖至第7圖之圖示。 *月參照第1圖至第7圖，其係繪示依照本發明—較佳實 施例的-種光學式奈米熱壓印製程之製程剖面圖。在本發明 中，進行熱壓印製程時，可先提供模仁1〇〇,其中此模仁⑽ 、之-表面1()2預設有壓印圖f 1G4。模仁⑽之材質需較欲壓 印之材料硬’且為可被雷射或燈源等加熱源加熱之材料可 例如為矽晶圓、包含所有高分子聚合物(p〇lymer)系列材質、 有機材料、塑膠材料、半導體材料、金屬材料、石英、玻璃 材料、陶兗材料、無機材料、具導電材質、或上述材料中兩 者或兩者以上所合成之材料。在本發明之一實施例中，於模 仁100之表面102上設置壓印圖案104時，可先利用例如塗 佈法、印刷法、物理沉積法或化學沉積法於模仁100之表面 % ,102上形成尚分子材料層（未繪示），其中此高分子材料層之材 料可為壓克力或光阻材料。接著，利用常見之微影製程 (Photo-Lithography)、電子束微影製程、或聚焦離子束（F〇cus Ion Beam)微影製程等對此高分子材料層進行圖案定義以在 高分子材料層中定義出圖案。再以經定義後之高分子材料層 為罩幕並利用乾式蝕刻（Dry Etching)或溼式蝕刻（Wet Etching) 的方式對模仁100進行蝕刻，或是利用物理沉積法（physical Deposition)或化學沉積法並結合剝除（Lift 〇ff)的方式，將所需 8 1342986 =壓印圖案104定義在模仁1〇〇之表面ι〇2上， :所示結構。在本發明申，模仁1〇〇之塵印圖帛 第1 未/奈米尺寸，或者更大或更小的圖形 圭 ^微 模仁100更具右赵佃# Μ 竿乂佳實施例中， 接荖…“冑準標記’以利後續壓印時之對準用。 .._ ，6“照第2圖，對模仁100之具有壓印圖案104 面m進行改質處理，利用例如塗佈方 方、 物理沉積法或化學，v锫、土认松/ I則万去、 予儿積法於模仁100之表面102上形成 光源吸收層I 06。並φ，a也r ^ 上$成加熱 射或燈为等力献η 層1〇6之材料為易被雷 度需高於往厭f… ㈣此材枓經加熱後所升高的溫 Ϊ層二：玻璃轉換溫度或是炫點，加熱光源吸 收層106之材料可為半導體 導體材科陶瓷材料、有機材料、塑 骖材枓、尚分子材料、具導電材質、 中雨去$ a 土、·_ 热機材枓、或上述材料 5 以所合成之材料，較佳可採用金屬，例如鉻 了^ 明之另—實_中’加熱光源吸收層106之材料 為模仁⑽之材料進行表面改質後的材料，例如利用離子 佈植方式於模i_ _之表φ 1()2上進行表面改質處理後所形 成之材料’所佈植的材料為有助於提升模卩100之表面1〇2 的溫度達到待壓印基板的玻璃轉換溫度或是炫點。待加执光 源吸收層106形成後’可在模仁1〇〇之表自ι〇2上的加孰光 源吸收層1 06上選擇性祕泠仗 a _ _ 、俾『生地塗佈一層脫模劑，以利模仁1〇〇與 壓印材料脫離。因此，脫模劑可選用有助於模t _與高i 子材料脫離的材料，例如杜邦公51(Dupod)所生產之鐵氟龍。 在本發明之一較佳實施例中，模仁的材料為石夕，且定義 於其表面上的壓印圖案為條狀，並蒸鍍一層絡（Cr)金屬層於模 1342986 仁表面上作為加熱光源吸收層，其中模仁圖案深度約為 3〇〇nm ’而絡金屬層之厚度約為70nm。 由於模仁100之具有壓印圖案1〇4之表面1〇2形成有加 ，熱光源吸收㉟106，因此可大大地改善模仁1〇〇之表面ι〇2對 ，於加熱光源的吸收’進一步加快壓印時模卩1〇〇的溫度 速度。 ^ 接下來，提供基板200，其中基板2〇〇具有相對之表面 2〇2與208,且基板200之材質可包括半導體材料、金屬材料、 $石英、玻璃材料、陶瓷材料、有機材料 '塑膠材料、高分子 材料纟導電材質、無機材料、或上述材料中兩者或兩 上所合成之材料。在本發明之一較佳實施例中，基板之 材質可為石夕。然《，可利用例如塗佈法、印刷法、物理沉積 法或化學沉積法於基板200之表面2〇2上塗佈高分子材料層 2〇4 ,如第3圖所不。其中’高分子材料層2〇4之玻璃轉換溫 度或熔點低於模仁100及加熱光源吸收層1〇6之熔點，且可 包含所有高分子聚合物系列材質、有機材料、塑膠材料、光 、阻材、或上述材料中兩者或兩者以上所合成之材料。在本發 明之一實施例中，高分子材料層2〇4之材料可為環氧基紫夕Χ卜 負光阻（SU_8)或聚甲基丙烯酸甲酯光阻（ΡΜΜΑ)。在本發明之 其他實施例中，基板200之表面上所塗覆之材料可與基板2〇〇 為同材質，或者基板200上可不另外設置供壓印之高分子材 料，而直接以基板200作為待壓印層。在本發明之—較佳實 施例中，基板2〇〇亦設有數個對準標記，以利後續壓印時模 仁100與基板200對準用。 10 1342986a surface, and the first surface of the mold core is provided with an embossing pattern y L, forming a heating source absorbing layer on the first surface of the mold core; and providing a substrate having a relative __ surface and a third surface a surface of the substrate is provided with a polymer material layer; then, the mold core is placed on the substrate, and the first surface of the mold core and the first surface of the substrate are opposite to each other, and then the second surface of the substrate is opposite Applying a pre-pressure to the substrate; then, providing a heating source such that the heating source enters the light from the second surface of the mold toward the first surface to heat the mold core and the heat source absorbing layer; and transferring the embossing pattern of the mold to the polymer material In the layer; then, remove the mold. According to a preferred embodiment of the present invention, the step of forming the absorption layer of the heating source is by coating, printing, physical deposition, chemical deposition or ion implantation. Ion Implantation method. Further, the heat source absorbing layer is a metal layer. [Embodiment] 7 1342986 The invention discloses an optical nano-imprinting process capable of transferring light with low laser energy and can be applied to a polymer material or a photoresist having a high glass transition temperature. The embossing technology can be made large-area, and has the advantages of low cost, fast and mass production. In order to make the description of the present invention more detailed and complete, reference is made to the following description in conjunction with the drawings of Figures 1 through 7. * Months Referring to Figures 1 through 7, there are shown process cross-sectional views of an optical nano-embossing process in accordance with the present invention - a preferred embodiment. In the present invention, when performing the hot stamping process, the mold core 1 is first provided, wherein the mold core (10) and the surface 1 () 2 are preliminarily provided with an imprint pattern f 1G4. The material of the mold core (10) needs to be harder than the material to be imprinted, and the material which can be heated by a heating source such as a laser or a light source can be, for example, a germanium wafer, containing all the polymer materials of the p〇lymer series. Organic materials, plastic materials, semiconductor materials, metal materials, quartz, glass materials, ceramic materials, inorganic materials, conductive materials, or materials synthesized from two or more of the above materials. In an embodiment of the present invention, when the embossed pattern 104 is disposed on the surface 102 of the mold core 100, the surface % of the mold core 100 may be firstly applied by, for example, coating, printing, physical deposition or chemical deposition. A layer of a molecular material (not shown) is formed on the substrate 102, wherein the material of the polymer material layer may be an acrylic or photoresist material. Then, using a common photo-lithography process, an electron beam lithography process, or a focused ion beam (F〇cus Ion Beam) lithography process, the polymer material layer is patterned to be in the polymer material layer. The pattern is defined in . Then, the defined polymer material layer is used as a mask, and the mold core 100 is etched by dry etching or Wet Etching, or by physical deposition or chemical deposition (physical deposition) or chemistry. The deposition method is combined with the stripping method (Lift 〇ff) to define the desired 8 1342986 = embossed pattern 104 on the surface ι 2 of the mold core 1 : the structure shown. In the present invention, the dust print of the mold core 1 未 first / nano size, or larger or smaller graphics 圭 ^ micro mold kernel 100 more right Zhao 佃 # Μ 竿乂 better example , 荖 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 胄 . . . . . . . . . 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The square side, the physical deposition method or the chemistry, the v锫, the soil confession/I is 10,000, and the singular method forms the light source absorbing layer I 06 on the surface 102 of the mold core 100. And φ, a also r ^ on the heat radiation or the lamp is equal to the force η layer 1 〇 6 material is easy to be required by the thunder is higher than the anger f... (4) the temperature of the material after heating Layer 2: glass conversion temperature or sleek point, the material of the heating source absorbing layer 106 may be a semiconductor conductor material ceramic material, an organic material, a plastic enamel material, a molecular material, a conductive material, a rain to go to a soil, · _ heat machine 枓, or the above material 5 to the material synthesized, preferably using a metal, such as chrome, the other material of the heat source absorbing layer 106 is the material of the mold core (10) for surface modification After the material, for example, the material formed by the surface modification treatment on the surface φ 1 () 2 of the mold i_ _ by the ion implantation method is implanted to help lift the surface of the mold 100. The temperature of 2 reaches the glass transition temperature or the sleek point of the substrate to be imprinted. After the addition of the light source absorbing layer 106 is formed, the selective 泠仗 a _ _ , 俾 『 生 涂布 生 生 生 生 生 生 生 生 生 生 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可The agent is detached from the imprinted material. Therefore, the release agent may be selected from materials which contribute to the detachment of the mold _ from the high i sub-material, such as Teflon produced by Dupon. In a preferred embodiment of the present invention, the material of the mold core is Shi Xi, and the embossed pattern defined on the surface thereof is strip-shaped, and a layer of complex (Cr) metal is vapor-deposited on the surface of the mold 1342986. The light source absorbing layer is heated, wherein the mold pattern has a depth of about 3 〇〇 nm ' and the thickness of the metal layer is about 70 nm. Since the surface 1〇2 of the mold core 100 having the embossed pattern 1〇4 is formed and the heat source absorbs 35106, the surface ι〇2 pair of the mold core 1 can be greatly improved, and the absorption of the heating source is further Speed up the temperature of the mold at the time of imprinting. Next, a substrate 200 is provided, wherein the substrate 2 has opposite surfaces 2〇2 and 208, and the material of the substrate 200 may include a semiconductor material, a metal material, a quartz, a glass material, a ceramic material, an organic material, and a plastic material. , a polymer material, a conductive material, an inorganic material, or a material synthesized on two or both of the above materials. In a preferred embodiment of the present invention, the material of the substrate may be Shi Xi. However, the polymer material layer 2〇4 may be coated on the surface 2〇2 of the substrate 200 by, for example, a coating method, a printing method, a physical deposition method, or a chemical deposition method, as shown in Fig. 3. The glass transition temperature or melting point of the polymer material layer 2〇4 is lower than the melting point of the mold core 100 and the absorption layer of the heating source 1〇6, and may include all polymer series materials, organic materials, plastic materials, light, A barrier material, or a material synthesized from two or more of the above materials. In one embodiment of the present invention, the material of the polymer material layer 2〇4 may be an epoxy group austenite negative photoresist (SU_8) or a polymethyl methacrylate photoresist (ΡΜΜΑ). In other embodiments of the present invention, the material coated on the surface of the substrate 200 may be the same material as the substrate 2, or the substrate 200 may be provided with a polymer material for imprinting, and the substrate 200 may be directly used as the substrate 200. To be imprinted. In the preferred embodiment of the invention, the substrate 2 is also provided with a plurality of alignment marks for alignment of the mold 100 with the substrate 200 during subsequent imprinting. 10 1342986
接著，將模仁100放置在基板2〇〇或基板2〇〇上之高分 子材料層204上，使模仁100之表面1〇2與基板2〇〇之表面 2〇2相對。將模仁1〇〇放置於基板2〇〇上時，可利用基板2⑽ 上及模仁1 〇〇上之對準標記，來確定基板與模仁1 〇〇壓 印時的相對位置。此外，將模仁1〇〇放置在基板2〇〇上方時， 可選擇性地施加一預壓力，以略為固定模仁1〇〇與基板2⑻ 之間的相對位置。接著，從基板2〇〇之表面2〇2的相對表面 2〇8外加壓力，而將模仁1〇〇壓在基板2〇〇或基板2〇〇之高分 子材料層204上，如第4圖所示。再利用加熱光源以適當波 長的雷射光或是光由模卩100之表s 1〇2的相對面入射至模 仁1〇〇之表面1〇2,以加熱模仁100以及加熱光源吸收層ι〇卜 如第5圖所示。加熱光源可包含雷射與燈泡，其中雷射之光 源波長介於約lnm至約10、之間’燈泡之光源波長介於約 Inm至約ι〇7μπι之間。在本發明之一實施例中，加埶光 :皮長之雷射。在本發明之較佳實施例巾，加熱光源為 紅外光脈衝雷身。這些適當波長的雷射&或光為模卩⑽及 加熱光源吸收層106全部吸收或部分吸收部分穿透使模仁 1〇〇瞬間加熱至足使基板2GG或基板上之高分子材料層 2〇4形成熔融狀態。其中，要注意基板2〇〇或基板上之高 分子材㈣204溫度上升至本身材料熔融狀所需溫度時此 時的溫度必須尚未達到模仁100及加熱光源吸收層1〇6自身 熔融狀所需的溫度。 因此，本發明之一特徵就是在對模仁表面進行表面改質 處理，藉以改變模仁對光或雷射光的吸收，而達到提高模仁 1342986 吸收光的效能，進一步縮減模仁加溫時間，並大幅加快壓印 製程的時間。此外，由於模仁吸收光的效能提高，因此可降 低加熱光源之能量，且可應用在較高玻璃轉換溫度之高分子 ^ 材料或光阻劑上。 . 此時，使基板200或基板200之高分子材料層204達到 熔融狀態，以將模仁丨00上之壓印圖案1 〇4轉印至基板 或基板200之高分子材料層2〇4上，如第5圖所示。同時間， 基板200或基板200上之高分子材料層2〇4亦可能會吸收小 |部分的能量，進而加熱達到協助提高自身溫度至熔融狀的效 果。將模仁100壓入基板200或基板200上之高分子材料層 204時，外加壓力的方式可採機械式、電磕式液壓式或氣壓 式。 之後，待基板200或基板200上之高分子材料層2〇4之 溫度冷卻而固化後，進行脫模的動作，使模仁1〇〇脫離基板 2〇〇或基板200上之高分子材料層2〇4。此時，模仁1〇〇上之 壓印圖案1〇4已順利轉印至基板2〇〇或基板2〇〇上之高分子 |材料層204中，而在基板2〇〇上形成圖案2〇6，如第6圖所示。 若欲將模仁1〇〇上之壓印圖案1〇4轉印至基板2〇〇上時， 則必須進行乾式姓刻，以將高分子枋料層2〇4中之圖案2〇6 凹陷處所殘餘的材料移除，直至暴露出下方之基板2〇〇的一 4刀表面202。經姓刻後，高分子材料層2〇4中之圖案的 非凹陷處的材料仍獲得保留，而可成為後續基板2〇〇蝕刻的 遮罩，如第7圖所示。接著，即可利用乾式姓刻或渔式蚀刻 的方式，並以留存下來之高分子材料層2〇4為遮罩，將基板 12 1342986 200蝕刻出所需要的圖形，或是利用物理沉積法、化學沉積法 並結合剝除法的方式將所需要的圖形定義在基板2〇〇之表面 202上，而完成基板200圖形轉印。值得注意的—點是，本發 I之模仁的壓印步驟可重複施加在相同基板上之不同被壓 由上述本發明較佳實施例可知’本發明之一優點就是因 為本發明之光學式奈米熱壓印製程對模仁之®案表面進行表Next, the mold core 100 is placed on the substrate 2 or the high molecular material layer 204 on the substrate 2 so that the surface 1〇2 of the mold 100 is opposed to the surface 2〇2 of the substrate 2〇〇. When the mold 1 is placed on the substrate 2, the alignment marks on the substrate 2 (10) and the mold 1 can be used to determine the relative position of the substrate and the mold 1 when the stamp is pressed. Further, when the mold 1 is placed over the substrate 2, a pre-pressure can be selectively applied to slightly fix the relative position between the mold 1 and the substrate 2 (8). Next, pressure is applied from the opposite surface 2〇8 of the surface 2〇2 of the substrate 2, and the mold 1 is pressed onto the polymer material layer 204 of the substrate 2〇〇 or the substrate 2, as in the 4th. The figure shows. Then, using a heating light source, laser light of appropriate wavelength or light is incident on the surface 1〇2 of the mold 1〇〇 from the opposite surface of the surface s 1〇2 of the mold 100 to heat the mold core 100 and heat the light absorption layer. The picture is shown in Figure 5. The heating source can comprise a laser and a bulb, wherein the source wavelength of the laser is between about 1 nm and about 10, and the source wavelength of the bulb is between about Inm and about ι 7 μm. In one embodiment of the invention, the neon is added: a laser with a long skin. In a preferred embodiment of the invention, the heating source is an infrared light pulse. These appropriate wavelengths of laser & or light for the mold (10) and the heating source absorption layer 106 all absorbed or partially absorbed part of the penetration of the mold 1 〇〇 instantaneously heated to the substrate 2GG or the polymer material layer 2 on the substrate 〇4 forms a molten state. Among them, it should be noted that the temperature of the substrate 2〇〇 or the polymer material (4) 204 on the substrate rises to the temperature required for the melting of the material itself. The temperature at this time must not have reached the temperature required for the mold core 100 and the heating source absorption layer 1〇6 to melt itself. temperature. Therefore, one of the features of the present invention is to perform surface modification on the surface of the mold core, thereby changing the absorption of light or laser light by the mold core, thereby improving the light absorption efficiency of the mold 1342986, and further reducing the heating time of the mold core. And greatly speed up the time of the imprint process. In addition, since the efficiency of absorbing light of the mold core is improved, the energy of the heating source can be reduced, and it can be applied to a high-mole glass material or a photoresist. At this time, the polymer material layer 204 of the substrate 200 or the substrate 200 is brought into a molten state to transfer the embossed pattern 1 〇4 on the mold core 00 to the polymer material layer 2〇4 of the substrate or substrate 200. As shown in Figure 5. At the same time, the polymer material layer 2〇4 on the substrate 200 or the substrate 200 may also absorb the energy of the small portion, and then heat to achieve the effect of helping to increase its temperature to the molten state. When the mold core 100 is pressed into the polymer material layer 204 on the substrate 200 or the substrate 200, the pressure can be applied in a mechanical type, an electric hydraulic type or a pneumatic type. Thereafter, after the temperature of the polymer material layer 2〇4 on the substrate 200 or the substrate 200 is cooled and solidified, the mold release operation is performed to separate the mold core 1 from the substrate 2 or the polymer material layer on the substrate 200. 2〇4. At this time, the imprint pattern 1〇4 on the mold core 1 has been smoothly transferred to the polymer material layer 204 on the substrate 2 or the substrate 2, and the pattern 2 is formed on the substrate 2〇〇. 〇 6, as shown in Figure 6. If the embossed pattern 1〇4 on the mold 1 is to be transferred onto the substrate 2, it must be dry-typed to dent the pattern 2〇6 in the polymer layer 2〇4. The remaining material of the space is removed until a 4-blade surface 202 of the underlying substrate 2 is exposed. After the surname is engraved, the non-recessed material of the pattern in the polymer material layer 2〇4 is still retained, and can be a mask for subsequent substrate etching, as shown in FIG. Then, the dry pattern or the fishing etching method can be used, and the remaining polymer material layer 2〇4 can be used as a mask to etch the substrate 12 1342986 200 into a desired pattern, or to use physical deposition, chemistry. The deposition method is combined with the stripping method to define the desired pattern on the surface 202 of the substrate 2, and the pattern transfer of the substrate 200 is completed. It is worth noting that the embossing step of the mold of the present invention can be repeatedly applied to the same substrate and the different pressures are known from the preferred embodiment of the present invention. One of the advantages of the present invention is that the optical type of the present invention is Nano thermal imprinting process on the surface of the mold
面改質而形成加熱光源吸收層，可大幅增進模仁對加熱光源 的吸收，而大大地提升模仁吸收光的效能，因此不僅可以較 低的雷射能量來進行轉印的技術，更可有效縮短模仁達到‘ 印材料所需的玻璃轉換溫度，㈣利於大量生纟，而具有極 優異之量產性。 由上述本發明較佳實施例可知，本發明之另一優點就是 因為本發明之模仁之圖案表面覆設有加熱光源吸收層，因此 可有效提高模仁之熱傳導速率’而可提高雷射輔助壓印技術 中壓印時的溫度’不僅可促使圖形轉印更易達成，更可降低 雷射所需能量’進而可克服雷射輔助壓印技術大面積化的困 難點’達到製作大面積' 快速及量產化的奈米圖形的元件。 由上述本發明較佳實施例可知，本發明之再一優點就是 因為本發明之模仁可採用矽材料，因此模仁之製程容易、成 本低廉、且在模仁材料的選擇上也具有多樣性，從而可利用 材料上的變化及晶格特性來製作出多樣化及三維化的圖案， 因此不僅在製作模仁上可輕易獲得所需的結構，更可增加奈 米壓印技術之變化性此外，在本發明中’若以碎作為模仁 13 丄342986 才料在模仁製作上較便宜也較容易，且圖案深度可以輕易 達到數個微米深’有利於後續壓印之進行，且較容易運用至 現行之半導體製程。另外’本發明亦可利用轉印的方式將圖 形轉印至石英材料上，製作出石英模仁進而銜接 的技術。 饮 如上’然其並非用以 脫離本發明之精神和 此本發明之保護範圍 —較佳實施例的一種The surface modification is carried out to form the absorption layer of the heating source, which can greatly enhance the absorption of the heating source by the mold core, and greatly improve the efficiency of the light absorption of the mold core, so that not only the lower laser energy can be used for the transfer technology, but also the technology. Effectively shortening the mold to achieve the glass transition temperature required for printing materials, (4) is conducive to mass production, and has excellent mass production. According to the preferred embodiment of the present invention, another advantage of the present invention is that since the pattern surface of the mold core of the present invention is covered with the heat source absorbing layer, the heat transfer rate of the mold core can be effectively improved, and the laser assisted embossing can be improved. The temperature in the technology of imprinting not only promotes the transfer of the pattern transfer more easily, but also reduces the energy required for the laser', which can overcome the difficulty of the large area of the laser-assisted imprinting technology. The components of the nanopattern produced. According to the preferred embodiment of the present invention, another advantage of the present invention is that the mold of the present invention can be made of a tantalum material, so that the mold is easy to process, low in cost, and diverse in the selection of the mold material. Therefore, the change in the material and the lattice characteristics can be utilized to produce a diversified and three-dimensional pattern, so that not only the desired structure can be easily obtained on the mold core, but also the variability of the nanoimprint technology can be increased. In the present invention, 'if it is used as a mold 13 丄 342986, it is cheaper and easier to manufacture in the mold, and the depth of the pattern can easily reach several micrometers deep', which is favorable for subsequent imprinting, and is easier to use. To the current semiconductor manufacturing process. Further, the present invention can also transfer a pattern onto a quartz material by means of transfer to produce a quartz mold and then join. The above is not intended to depart from the spirit of the invention and the scope of the invention - a preferred embodiment
雖然本發明已以一較佳實施例揭露 限定本發明，任何熟習此技藝者，在不 範圍内，當可作各種之更動與潤飾，因 當視後附之申請專利範圍所界定者為準 【圖式簡單說明】 第1圖至第7圖係繪示依照本發明 光學式奈米熱壓印製程之製程剖面圖。While the present invention has been described in terms of a preferred embodiment of the invention, it is to be understood that the invention may be modified and modified, as defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 through Fig. 7 are cross-sectional views showing the process of an optical nanoimprinting process in accordance with the present invention.
【主要元件符號說明】 100 :模仁 104 :壓印圖案 200 :基板 204 :高分子材料層 208 :表面 102 .表面 106 :加熱光源吸收層 202 :表面 206 :圖案 14[Main component symbol description] 100: mold core 104: embossed pattern 200: substrate 204: polymer material layer 208: surface 102. surface 106: heating light source absorption layer 202: surface 206: pattern 14
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| TW95117177A TWI342986B (en) | 2006-05-15 | 2006-05-15 | Optical thermal nano-imprinting process |
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| US9242505B2 (en) | 2009-09-14 | 2016-01-26 | Compal Electronics, Inc. | Production method of workpiece and workpiece with three-dimensional pattern |
| US9290039B2 (en) | 2009-09-14 | 2016-03-22 | Compal Electronics, Inc. | Production method of workpiece and workpiece with three-dimensional pattern |
| CH714230A2 (en) * | 2017-10-11 | 2019-04-15 | Daetwyler Schweiz Ag | Method for forming a sheet-like substrate. |
| CN110221519A (en) * | 2019-05-29 | 2019-09-10 | 重庆惠科金渝光电科技有限公司 | A kind of metallic mold for nano-imprint, board and its method for stamping |
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