CN101625468B - Touch liquid crystal display preparation method - Google Patents
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- CN101625468B CN101625468B CN2009100046199A CN200910004619A CN101625468B CN 101625468 B CN101625468 B CN 101625468B CN 2009100046199 A CN2009100046199 A CN 2009100046199A CN 200910004619 A CN200910004619 A CN 200910004619A CN 101625468 B CN101625468 B CN 101625468B
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Abstract
A touch liquid crystal display preparation method comprises the following steps: a touch display is provided, the touch display comprises two transparent conductive layers, each transparent conductive layer comprises at least one carbon nanotube membrane; a first polarizing layer is formed on one surface of the touch display; a thin film transistor panel is provided, the thin film transistor panel comprises a plurality of thin film transistors, a semiconductor layer of each thin film transistor comprises a plurality of carbon nanotubes; a liquid crystal layer is encapsulated between the first polarizing layer and the thin film transistor panel of the touch display.
Description
Technical field
The present invention relates to a kind of preparation method of liquid crystal display, relate in particular to a kind of preparation method of the touch liquid crystal display based on carbon nano-tube.
Background technology
Liquid crystal display is because low-power consumption, miniaturization and high-quality display effect become one of best display mode.LCDs comparatively commonly used at present is the LCDs (TN-LCD) of TN (twisted-nematic phase) pattern.For TN-LCD, when not applying voltage on the electrode, LCDs is in " OFF " state, and luminous energy sees through LCDs and is logical light state; When applying certain voltage on electrode, LCDs is in " ON " attitude, and the long axis of liquid crystal molecule direction is arranged along direction of an electric field, and light can not see through LCDs, so be the shading state.By on electrode, applying voltage selectively, can demonstrate different patterns.
In recent years, be accompanied by the high performance and the diversified development of various electronic equipments such as mobile phone and touch navigation system, the electronic equipment that the touch-screen of light transmission is installed in the front of display elements such as liquid crystal progressively increases.The user of such electronic equipment is by touch-screen, on one side the displaying contents of the display element that is positioned at the touch-screen back side is carried out visual confirmation, utilize modes such as finger or pen to push touch-screen on one side and operate.Thus, various functions that can operating electronic equipment.
Different according to the principle of work of touch-screen and transmission medium, existing touch-screen is divided into four types usually, is respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type.Wherein being most widely used of resistive touch screen sees also document " Production of Transparent ConductiveFilms with Inserted SiO
2Anchor Layer, and Application to a Resistive TouchPanel " Kazuhiro Noda, Kohtaro Tanimura.Electronics and Communications inJapan, Part 2, Vol.84, P39-45 (2001).
Existing resistive touch screen generally comprises a upper substrate, and the lower surface of this upper substrate is formed with transparency conducting layer on; One infrabasal plate, the upper surface of this infrabasal plate is formed with transparency conducting layer; And a plurality of point-like spacers (Dot Spacer) are arranged between transparency conducting layer and the following transparency conducting layer.Wherein, transparency conducting layer and this time transparency conducting layer adopt indium tin oxide (Indium Tin Oxide, ITO) layer (calling the ITO layer in the following text) with conductive characteristic usually on this.When using finger or pen to push upper substrate, upper substrate is distorted, and makes the last transparency conducting layer at the place of pushing and following transparency conducting layer contact with each other.Upwards transparency conducting layer and following transparency conducting layer apply voltage successively respectively by external electronic circuit, touch screen controller is by measuring change in voltage on first conductive layer and the change in voltage on second conductive layer respectively, and carry out accurate Calculation, convert thereof into contact coordinate.Touch screen controller passes to central processing unit with digitized contact coordinate.Central processing unit sends command adapted thereto according to contact coordinate, and the various functions that start electronic equipment are switched, and shows by display controller control display element.
Yet the ITO layer adopts the preparation of technologies such as ion beam sputtering or evaporation usually as transparency conducting layer, in the process of preparation, needs higher vacuum environment and need be heated to
Therefore, make that the preparation cost of ITO layer is higher.In addition, the ITO layer as transparency conducting layer have mechanical property good inadequately, be difficult to shortcomings such as bending and resistance skewness.In addition, ITO transparency in malaria can descend gradually.Thereby cause existing resistive touch screen and display device to exist durability good inadequately, shortcoming such as sensitivity is low, linearity and accuracy are relatively poor.This shows that it is numerous and diverse to adopt the touch LCD screen of this touch-screen to have preparation technology, the cost height, poor durability, sensitivity is low, and deficiencies such as linearity and poor accuracy.
Summary of the invention
In view of this, necessaryly provide a kind of method for preparing touch LCD screen, it is simple that this method has technology, low cost and other advantages, and the touch LCD screen durability of preparation is good, highly sensitive, and linearity and accuracy are strong.
A kind of preparation method of touch LCD screen, it may further comprise the steps: a touch-screen is provided, and this touch-screen comprises two transparency conducting layers, and this transparency conducting layer comprises at least one carbon nano-tube film; Form the surface of one first polarizing layer in above-mentioned touch-screen; One thin-film transistor display panel is provided, and this thin-film transistor display panel comprises a plurality of thin film transistor (TFT)s, and the semiconductor layer in this thin film transistor (TFT) comprises a plurality of carbon nano-tube; And encapsulate a liquid crystal layer between first polarizing layer and thin-film transistor display panel of above-mentioned touch-screen.
Compared with prior art, the preparation method of touch LCD screen provided by the invention has the following advantages: because carbon nano-tube has excellent mechanical characteristic and anti-bending, so, adopt above-mentioned carbon nano-tube film producing transparent conductive layer, can make transparency conducting layer have good toughness and physical strength.Further, cooperate, can prepare a flexible touch LCD screen, thereby be suitable on the flexible display apparatus with flexible substrate.And it is simple that method has technology, low cost and other advantages, and the touch LCD screen durability of preparation is good, highly sensitive, and linearity and accuracy are strong.
Description of drawings
Fig. 1 is preparation method's the process flow diagram of the touch LCD screen of the embodiment of the invention.
Fig. 2 is the side view of the touch LCD screen of the embodiment of the invention.
Fig. 3 is preparation technology's process flow diagram of the touch-screen that touch LCD screen adopted of the embodiment of the invention.
Fig. 4 is in the described touch-screen preparation of the embodiment of the invention, the stereoscan photograph of employed carbon nano-tube film.
Fig. 5 is in the described touch-screen preparation of the embodiment of the invention, the hot pressing synoptic diagram of employing.
Fig. 6 is preparation technology's process flow diagram of upper substrate of the touch LCD screen of the embodiment of the invention.
Fig. 7 is the vertical view of the thin-film transistor display panel that adopted of embodiment of the invention touch LCD screen.
Fig. 8 is preparation technology's process flow diagram of the thin-film transistor display panel that adopted of embodiment of the invention touch LCD screen.
Fig. 9 is preparation technology's process flow diagram of the infrabasal plate of embodiment of the invention touch LCD screen.
Embodiment
Describe the preparation method of touch LCD screen of the present invention in detail below with reference to accompanying drawing.
See also Fig. 1 and Fig. 2, the embodiment of the invention provides a kind of preparation method of touch LCD screen 10, and it mainly may further comprise the steps:
Step 1: prepare a touch-screen 200, this touch-screen 200 comprises two transparency conducting layers, and this transparency conducting layer comprises at least one carbon nano-tube film.
See also Fig. 3, the method for described preparation one touch-screen 200 specifically may further comprise the steps:
(1) provide one first matrix 206, it comprises two facing surfaces.
Described first matrix 206 is a transparent flexible planar member.The thickness of this first matrix 206 is 0.01 millimeter～1 centimetre, and area is not limit, and can select according to actual conditions.This first matrix 206 is by plastics, and flexible materials such as resin form.Particularly, the material of described first matrix 206 can be in the materials such as polycarbonate (PC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polyethersulfone (PES), pi (PI), cellulose esters, benzocyclobutene (BCB), Polyvinylchloride (PVC) and acryl resin one or more.Be appreciated that the material that forms described first matrix 206 is not limited to the above-mentioned material of enumerating, as long as guarantee that described first matrix 206 has certain flexibility and reaches transparency preferably.
In the present embodiment, described first matrix 206 is a polyethylene terephthalate (PET) film (hereinafter to be referred as the PET film).The thickness of this PET film is 2 millimeters, and width is 20 centimetres, and length is 30 centimetres.
(2) form one first transparency conducting layer 208 in a surface of described first matrix 206.
The method of described formation one first transparency conducting layer 208 in a surface of described first matrix 206 specifically may further comprise the steps:
At first, prepare at least one carbon nano-tube film.
The described method for preparing carbon nano-tube film comprises other methods such as direct growth method, waddingization method, rolled-on method or membrane method.Described carbon nano-tube film comprises a plurality of equally distributed carbon nano-tube, and these a plurality of carbon nano-tube are interconnected to form the conductive network structure.
The embodiment of the invention specifically may further comprise the steps with the method that the membrane method prepares a carbon nano-tube film: a carbon nano pipe array (a) is provided, and preferably, this array is super in-line arrangement carbon nano pipe array; (b) the part carbon nano-tube of selected certain width from above-mentioned carbon nano pipe array, present embodiment are preferably and adopt the adhesive tape contact carbon nano pipe array with certain width to select the part carbon nano-tube of certain width; (c) with certain speed along being basically perpendicular to the carbon nano pipe array direction of growth this part carbon nano-tube that stretches, form a continuous carbon nano tube film.
The preparation method of being somebody's turn to do super in-line arrangement carbon nano pipe array can adopt chemical vapour deposition technique, graphite electrode Constant Electric Current arc discharge sedimentation or laser evaporation sedimentation.The carbon nano-pipe array that the embodiment of the invention provides is classified one or more in single-wall carbon nanotube array, double-walled carbon nano-tube array and the array of multi-walled carbon nanotubes as.Should super in-line arrangement carbon nano-pipe array classify as a plurality of parallel to each other and perpendicular to the pure nano-carbon tube array of the carbon nano-tube formation of substrate grown.The substrate of this carbon nano-tube is capable of circulation repeatedly to be used, thereby reduces the manufacturing cost of this carbon nano pipe array.Carbon nano-tube in this carbon nano pipe array closely contacts the formation array by Van der Waals force each other.This carbon nano pipe array and above-mentioned area of base are basic identical.The height of this carbon nano pipe array is greater than 100 microns.In the present embodiment, preferably, the height of carbon nano pipe array is 200 microns～900 microns.
See also Fig. 4, in above-mentioned drawing process, the part carbon nano-tube of selecting in the super in-line arrangement carbon nano pipe array under the pulling force effect is when draw direction breaks away from substrate gradually, because Van der Waals force effect, other carbon nano-tube of being somebody's turn to do in the super in-line arrangement carbon nano pipe array is drawn out end to end continuously, thereby forms a carbon nano-tube film.This carbon nano-tube film comprises that a plurality of carbon nano-tube join end to end and align along draw direction.The carbon nano-tube film that is arranged of preferred orient that obtains that should directly stretch has better homogeneity than unordered carbon nano-tube film, promptly has more homogeneous thickness and more uniform conductive performance.Directly the method for stretching acquisition carbon nano-tube film is simply quick simultaneously, the suitable industrial applications of carrying out.
In the present embodiment, the width of described carbon nano-tube film is relevant with the size of the substrate that carbon nano pipe array is grown, and the length of this carbon nano-tube film is not limit, and can make according to the actual requirements.Adopt 4 inches the super in-line arrangement carbon nano pipe array of substrate grown in the present embodiment, the width of this carbon nano-tube film can be 0.01 centimetre～10 centimetres, and the thickness of this carbon nano-tube film is 0.5 nanometer～100 micron.Carbon nano-tube in this carbon nano-tube film is one or more in Single Walled Carbon Nanotube, double-walled carbon nano-tube and the multi-walled carbon nano-tubes.The diameter of this Single Walled Carbon Nanotube is 0.5 nanometer～50 nanometers, and the diameter of this double-walled carbon nano-tube is 1.0 nanometers～50 nanometers, and the diameter of this multi-walled carbon nano-tubes is 1.5 nanometers～50 nanometers.
The preparation method who is appreciated that described carbon nano-tube film can also be other methods such as direct growth method, rolled-on method or waddingization method.Described direct growth method is for using chemical vapour deposition technique carbon nanotube film on a substrate.This carbon nano-tube film is the disordered carbon nanotube films, and this carbon nano-tube film comprises the carbon nano-tube of a plurality of lack of alignment.The method that described employing rolled-on method prepares carbon nano-tube film may further comprise the steps: provide a carbon nano pipe array to be formed at a substrate; And provide a device for exerting to push above-mentioned carbon nano pipe array, thereby obtain carbon nano-tube film.This carbon nano-tube film is the disordered carbon nanotube films, and comprises a plurality of carbon nano-tube that are arranged of preferred orient along one or more directions.Described wadding legal system is equipped with carbon nano-tube and may further comprise the steps: the carbon nanometer tube material that direct growth is obtained joins in the solvent and wadding a quilt with cotton processing acquisition carbon nanotube flocculent structure; And above-mentioned carbon nanotube flocculent structure separated from solvent, and to this carbon nanotube flocculent structure typing is handled to obtain carbon nano-tube film, this carbon nano-tube film is the disordered carbon nano-tube film, and comprises a plurality of mutual windings and isotropic carbon nano-tube.
Secondly, adopt the above-mentioned carbon nano-tube film of laser treatment.
Because have Van der Waals force between the carbon nano-tube in the carbon nano-tube film, some carbon nano-tube in the carbon nano-tube film is assembled the formation carbon nano-tube bundle easily, this carbon nano-tube beam diameter is bigger, has influenced the light transmission of carbon nano-tube film.Be to improve the light transmission of carbon nano-tube film, with power density greater than 0.1 * 10
4Watt/square metre this carbon nano-tube film of laser radiation, it is bigger to remove in the carbon nano-tube film diameter, the carbon nano-tube bundle that light transmission is relatively poor.Adopt the step of laser treatment carbon nano-tube film in aerobic environment, to carry out.Preferably, the step of laser treatment carbon nano-tube film is carried out under air ambient.
Adopt the above-mentioned carbon nano-tube film of laser treatment can pass through the fixed carbon nanotube films, moving laser device shines the method realization of this carbon nano-tube film then; Or by fixed laser, mobile carbon nano-tube film is realized the method for this carbon nano-tube film of laser radiation.
In the process of above-mentioned laser radiation carbon nano-tube film, because carbon nano-tube has good absorption characteristic to laser, and laser is one to have the light of higher-energy, can produce certain heat after being absorbed by carbon nano-tube film, and the carbon nano-tube in the carbon nano-tube film is heated up.In the carbon nano-tube film, the heat that the carbon nano-tube bundle that diameter is bigger absorbs is more, and therefore, the temperature of the carbon nano-tube that described carbon nano-tube is intrafascicular is higher, and when the temperature of carbon nano-tube reaches enough high (generally greater than 600 ℃), carbon nano-tube bundle is burnt by laser.With respect to the carbon nano-tube film before the laser treatment, the light transmission of the carbon nano-tube film after the laser treatment increases significantly, and its transmittance is greater than 70%.
Be appreciated that the purpose that adopts laser treatment carbon nano-tube membrane structure is the further transparency that improves carbon nano-tube film, so this step is a selectable step.
At last, described at least one carbon nano-tube film is arranged at a surface of described first matrix 206, forms a carbon nanotube layer, thereby form one first transparency conducting layer 208 on the surface of described first matrix 206.
In the embodiment of the invention, described first transparency conducting layer 208 is a carbon nanotube layer, and this carbon nanotube layer comprises a plurality of carbon nano-tube that align.Particularly, described carbon nanotube layer can be a single carbon nano-tube film or a plurality of parallel and do not have a carbon nano-tube film that lay in the gap.Because a plurality of carbon nano-tube films in the above-mentioned carbon nanotube layer can parallel and gapless laying, so the length and the width of above-mentioned carbon nanotube layer are not limit, can make the carbon nanotube layer with random length and width according to actual needs.In the present embodiment, described carbon nanotube layer comprises a plurality of parallel and do not have a carbon nano-tube film that lay in the gap.
Be appreciated that carbon nanotube layer of the present invention also can be the carbon nanotube layer of other structures, be not limited in the described structure of present embodiment.
Be appreciated that, in the present embodiment, a plurality of carbon nano-tube plies can also be laid and form one first transparency conducting layers 208, and these a plurality of carbon nanotube layers according to the orientation of carbon nano-tube with the direct overlapping laying of an intersecting angle α, wherein, 0 °≤α≤90 °.In the present embodiment, α is preferably 90 degree.
Particularly, the described step that at least one carbon nano-tube film is laid on the surface of described first matrix 206 is: at least one carbon nano-tube film is laid immediately on the surface of described first matrix 206 or a plurality of carbon nano-tube films are parallel and seamlessly be laid on the surface of described first matrix 206, forms a lip-deep carbon nanotube layer that covers described first matrix 206.Be appreciated that also and at least two overlapping surfaces that are laid on described first matrix 206 of carbon nano-tube film can be formed a plurality of carbon nanotube layers; Described a plurality of carbon nanotube layer according to the orientation of carbon nano-tube with the direct overlapping laying of an intersecting angle α, wherein, 0 °≤α≤90 °.Because described carbon nano-tube film comprises a plurality of carbon nano-tube that align, and these a plurality of carbon nano-tube are along the direction arrangement of membrane, so the orientation of above-mentioned a plurality of carbon nanotube layers according to carbon nano-tube can be provided with an intersecting angle α.
In addition, the described step that above-mentioned at least one carbon nano-tube film is laid on the surface of described first matrix 206 also can be: described at least one carbon nano-tube film directly is layed in the surface of a supporter or a plurality of carbon nano-tube films are parallel and seamlessly be layed in the surface of a supporter; Remove described supporter, form the carbon nano-tube membrane structure of a self-supporting; And this carbon nano-tube membrane structure directly overlayed the surface of described first matrix 206, form a carbon nanotube layer.Be appreciated that also can be with at least two carbon nano-tube films according to the orientation of carbon nano-tube with the overlapping surface that is laid on described supporter of an intersecting angle α, thereby form the carbon nano-tube membrane structure of a plurality of self-supportings, wherein, 0 °≤α≤90 °.Above-mentioned a plurality of carbon nano-tube membrane structures are covered the surface of described first matrix 206, thereby form a plurality of carbon nanotube layers.Because described carbon nano-tube film comprises a plurality of carbon nano-tube that align, and these a plurality of carbon nano-tube are along the direction arrangement of membrane, so the carbon nano-tube in above-mentioned a plurality of carbon nanotube layers can be provided with an intersecting angle α.
Above-mentioned supporter can be a substrate, also can select a framed structure for use.Because the carbon nano-tube in the super in-line arrangement carbon nano pipe array that present embodiment provides is very pure, and because the specific surface area of carbon nano-tube itself is very big, so this carbon nano-tube film itself has stronger viscosity, this carbon nano-tube film can utilize the viscosity of itself directly to adhere to substrate or framework.Carbon nano-tube film is attached on substrate or the framework, and unnecessary carbon nano-tube membrane portions can scrape off with knife beyond substrate or the framework.Remove substrate or framework, obtain a carbon nano-tube membrane structure.In the present embodiment, the big I of this substrate or framework is determined according to actual demand.
Further, before the described surface that at least one carbon nano-tube film is laid on above-mentioned first matrix 206, or form after the carbon nanotube layer at least one surface that is covered in described first matrix 206, comprise the step of handling this carbon nano-tube film or this carbon nanotube layer with organic solvent.This organic solvent is a volatile organic solvent, can select ethanol, methyl alcohol, acetone, ethylene dichloride or chloroform etc. for use, and the organic solvent in the present embodiment adopts ethanol.This step of with an organic solvent handling can be dropped in the surface of carbon nano-tube film or carbon nanotube layer with organic solvent by test tube, and soaks into whole carbon nano-tube film or carbon nanotube layer.Also the above-mentioned whole immersion of supporter that is formed with first matrix 206 of carbon nanotube layer or is formed with the carbon nano-tube membrane structure can be filled in the container of organic solvent and soak into.Described carbon nano-tube film, carbon nanotube layer or carbon nano-tube membrane structure are after organic solvent soaks into processing, and under the capillary effect of volatile organic solvent, parallel carbon nano-tube segment wherein can partly be gathered into carbon nano-tube bundle.Therefore, the surface volume of this carbon nano-tube film, carbon nanotube layer or carbon nano-tube membrane structure is than little, and is inviscid, and has excellent mechanical intensity and toughness.
In addition, in the present embodiment, can also form a carbon nanotube composite material layer in the surface of described first matrix 206 as first transparency conducting layer 208, specifically may further comprise the steps:
At first, forming carbon nanotube layer before the surface of described first matrix 206, can apply the surface of a macromolecule material solution layer in described first matrix 206.
The method of described coating one macromolecule material solution layer in a surface of described first matrix 206 is: adopt brush or other instrument to pick a certain amount of macromolecule material solution, evenly be coated on the surface of flexible substrate or the surface of flexible substrate is immersed in and directly pick a certain amount of macromolecule material solution in the macromolecule material solution, form a macromolecule material solution layer.The mode that is appreciated that described surface applied macromolecule material solution at this flexible substrate is not limit, as long as can form uniform polymer material layer on the surface of flexible substrate.The thickness of described polymer material layer is 0.1 micron～1 millimeter.
Described macromolecule material solution is that macromolecular material is dissolved in the formed solution of volatile organic solvent, and it has certain viscosity, and preferably, the viscosity of macromolecule material solution is greater than 1 handkerchief second (Pas).Described macromolecular material is solid-state at normal temperatures, and has certain transparency.Described volatile organic solvent comprises ethanol, methyl alcohol, acetone, ethylene dichloride or chloroform etc.Described macromolecular material is a transparent polymer material, and it comprises polystyrene, tygon, polycarbonate, polymethylmethacrylate (PMMA), polycarbonate (PC), ethylene glycol terephthalate (PET), phenylpropyl alcohol cyclobutane (BCB), poly-cycloolefin etc.In the present embodiment, described macromolecular material is PMMA.
Secondly, a carbon nanotube layer is set on this macromolecule material solution layer, this macromolecule material solution is evenly spread in this carbon nanotube layer.The method that this macromolecule material solution is evenly spread in this carbon nanotube layer comprises pressure sintering, cold-press method or apply an air-flow in this carbon nanotube layer etc.
This carbon nanotube layer is formed at least one carbon nano-tube film, can be by at least one carbon nano-tube film being laid immediately on this macromolecule material solution layer, and its laying method is identical with above-mentioned method at first matrix, 206 surperficial directly shop films.
Please in the lump referring to Fig. 5, present embodiment adopts pressure sintering that this macromolecule material solution is evenly spread in this carbon nanotube layer.This method realizes by a hot-press arrangement 50, specifically may further comprise the steps:
(a) at least one above-mentioned first matrix 206 that is coated with carbon nanotube layer and macromolecule material solution layer being positioned over one has in the hot-press arrangement 50 of roll.
Described hot-press arrangement 50 comprises a device for exerting and a heating arrangement (not shown).In the present embodiment, described hot-press arrangement 50 is hot press or plastic sealing machine, and described device for exerting is two metal rolls 52.Described macromolecular material is a low-melting macromolecular material.
(b) roll 52 in the described hot-press arrangement 50 of heating.
Particularly, heat described roll 52 with the heating arrangement in the hot-press arrangement 50.In the present embodiment, the temperature of heating is
The temperature that is appreciated that described heated roll 52 can be selected according to actual needs.
(c) described first matrix 206 that is coated with carbon nanotube layer and macromolecule material solution layer is passed through warmed-up roll 52.
In the present embodiment, slowly by warmed-up two metal rolls 52, speed control is at 1 millimeter/minute～10 meters/minute with described first matrix 206 that is coated with carbon nanotube layer and macromolecule material solution layer.Warmed-up roll 52 can apply certain pressure in described first matrix 206 that is coated with carbon nanotube layer and macromolecule material solution layer, and can soften described carbon nanotube layer and macromolecule material solution layer, make the air between described carbon nanotube layer and the macromolecule material solution layer be extruded out, thereby make described carbon nanotube layer be dispersed in the carbon nanotube layer.
This macromolecule material solution layer also can play the effect of cementing agent, is used for described carbon nano-tube film is bonded in securely a surface of described first matrix 206.Macromolecular material in the carbon nanotube composite material layer can make carbon nanotube layer combine firmly with first matrix 206, simultaneously, because macromolecular material infiltrates in carbon nanotube layer, short circuit phenomenon between the carbon nano-tube in the carbon nanotube layer is eliminated, made the resistance of carbon nanotube layer be the better linearity relation.
At last, solidify to form a carbon nanotube composite material layer as first transparency conducting layer 208.
Particularly, applying low-melting macromolecular material before the surface of described first matrix 206, comprising further that also one cleans the step of described first matrix 206.Described cleaning method comprises the surface of cleaning described first matrix 206 with ethanol, acetone and other organic solvent.Be appreciated that described cleaning to first matrix 206 also can adopt other method and solvent, only need guarantee that described first matrix, 206 surface no-pollution things get final product.
(3) compartment of terrain forms two first electrode (not shown) in the two ends of above-mentioned first transparency conducting layer 208 or the two ends of first matrix 206, and is electrically connected with this first transparency conducting layer 208, forms one first battery lead plate 202.
Described two first electrodes can be silver slurry layer or other conductive material layers of metal level, carbon nano-tube film, conduction.In the embodiment of the invention, described two first electrodes are the silver slurry layer of conduction.The formation method of described two first electrodes specifically may further comprise the steps: at first, adopt modes such as serigraphy, bat printing or spraying respectively the silver slurry to be coated in the two ends of the above-mentioned carbon nanotube layer or first matrix 206; Then, put into the baking oven baking silver slurry is solidified, baking temperature is 100 ℃-120 ℃, can obtain described two first electrodes.Above-mentioned preparation method need guarantee that described two first electrodes are electrically connected with described first transparency conducting layer 208.
(4) provide one second matrix 210, it comprises two facing surfaces.
Described second matrix 210 is a transparent planar structure.The thickness of this second matrix 210 is 0.01 millimeter～1 centimetre, and area is not limit, and can select according to actual conditions.The material of this second matrix 210 can be hard material or flexible material.Wherein, described hard material can be in glass, quartz, adamas or the plastics etc. one or more.Described flexible material can be in the materials such as polycarbonate (PC), polymethylmethacrylate (PMMA), polyethylene terephthalate (PET), polyethersulfone (PES), pi (PI), cellulose esters, benzocyclobutene (BCB), Polyvinylchloride (PVC) and acryl resin one or more.Be appreciated that the material that forms described second matrix 210 is not limited to the above-mentioned material of enumerating, and has certain transparency as long as guarantee described second matrix 210.
In the embodiment of the invention, described second matrix 210 is a polyethylene terephthalate (PET) film (hereinafter to be referred as the PET film).The thickness of this PET film is 2 millimeters, and width is 20 centimetres, and length is 30 centimetres.
(5) form a carbon nanotube layer in a surface of described second matrix 210 as second transparency conducting layer 212, and the compartment of terrain forms two second electrode (not shown) in the two ends of this carbon nanotube layer or the two ends of described second matrix 210, forms one second battery lead plate 204.
First transparency conducting layer 208 in second transparency conducting layer 212 in described second battery lead plate 204 and the formation method of two second electrodes and first battery lead plate 202 is identical with the formation method of two first electrodes.
(6) above-mentioned first battery lead plate 202 of encapsulation and second battery lead plate 204 obtain a touch-screen 200.
Above-mentioned first battery lead plate 202 of described encapsulation and second battery lead plate 204, the method that obtains a touch-screen 200 specifically may further comprise the steps:
At first, form the periphery of an insulation course 214 in second transparency conducting layer 212 of described second battery lead plate 204.
Described insulation course 214 can adopt insulation transparent resin or other insulation transparent materials to make.The formation method of described insulation course 214 is: apply the periphery of an insulating binder in second transparency conducting layer 212 of described second battery lead plate 204.This insulating binder is as insulation course 214.
Secondly, cover first battery lead plate 202 on described insulation course 214, and described first transparency conducting layer 208 and described second transparency conducting layer 212 are oppositely arranged, obtain a touch-screen 200.
The straight line at two electrode places on the straight line at two electrode places in the described touch-screen 200 on first battery lead plate 202 and described second battery lead plate 204 intersects.
Further, cover first battery lead plate 202 and before on the described insulation course 214, can comprise that also one forms the step of a plurality of transparent point-like spacers 216 between described first battery lead plate 202 and second battery lead plate 204.The formation method of this transparent point-like spacer 216 is: will comprise the zone of slurry coating outside insulation course 214 on second battery lead plate 204 of these a plurality of transparent point-like spacers 216, and promptly form described transparent point-like spacer 216 after the oven dry.Described insulation course 214 all can adopt insulating resin or other insulating material to make with described transparent point-like spacer 216.Insulation course 214 is set makes win battery lead plate 202 and second battery lead plate, 204 electrical isolations with point-like spacer 216.Be appreciated that when touch-screen 200 sizes hour, point-like spacer 216 be selectable structure, need guarantee that first battery lead plate 202 and second battery lead plate, 204 electrical isolations get final product.
Be appreciated that in the present embodiment and can also elder generation form an insulation course 214, then, cover second battery lead plate 204 on described insulation course 214, form a touch-screen 200 in the periphery of first transparency conducting layer 208 of first battery lead plate 202.
The present invention can comprise further that also formation one transparent protective film 218 is in another surperficial step away from first transparency conducting layer 208 of these touch-screen 200 first matrixes 206.This transparent protective film 218 can be formed by in the materials such as silicon nitride, monox, phenylpropyl alcohol cyclobutane (BCB), polyester and acryl resin one or more.This transparent protective film 218 also can adopt layer of surface cure process, smooth scratch resistant plastic layer, as polyethylene terephthalate (PET) film, is used to protect this touch-screen 200, to improve durability.This transparent protective film 218 also can be used for providing some other additional function, as reducing dazzle or reducing reflection.In the present embodiment, this transparent protective film 218 adopts sticking PET film, this PET film can directly adhere to first matrix 206 away from the surface of first transparency conducting layer 208 as transparent protective film 218.
Step 2 forms the surface of one first polarizing layer 220 in described touch-screen 200.
See also Fig. 6, described first polarizing layer 220 is formed at the surface of second matrix 210 of described touch-screen 220 away from second transparency conducting layer 212.Described first polarizing layer 220 is a carbon nanotube layer.This carbon nanotube layer comprises at least one carbon nano-tube film, and this carbon nanotube layer can also be formed by parallel no gap laying of a plurality of carbon nano-tube films or overlapping the setting, and the orientation of carbon nano-tube is identical in adjacent two carbon nano-tube films.This carbon nano-tube film comprises a plurality of carbon nano-tube that join end to end and be arranged of preferred orient.Between these a plurality of carbon nano-tube by the Van der Waals force combination.On the one hand, connect by Van der Waals force between the end to end carbon nano-tube; On the other hand, part is by the Van der Waals force combination between the carbon nano-tube that is arranged of preferred orient.So this carbon nano-tube film has self-supporting and pliability preferably.
Described formation one carbon nanotube layer forms a carbon nanotube layer in the method on the surface of described second matrix 210 and above-mentioned steps basic identical in the method on a surface of described first matrix 206.Its difference is that in this step, the orientation of carbon nano-tube is identical in first polarizing layer 220.The thickness of this first polarizing layer 220 is 100 microns～1 millimeter.
Be appreciated that since this carbon nano-tube have good electric conductivity, and this first polarizing layer 220 comprise a plurality of along same direction carbon nanotubes arranged, so this first polarizing layer 220 has the effect of transparency electrode and polaroid simultaneously.
Be appreciated that also can further form one first both alignment layers 222, thereby obtain a upper substrate 20 in the surface of described first polarizing layer 220.
The preparation method of described first both alignment layers 222 mainly may further comprise the steps:
(1) on first polarizing layer, 220 surfaces, forms an alignment film.
The material of described alignment film comprises polystyrene and derivant thereof, polyimide, polyvinyl alcohol (PVA), polyester, epoxy resin, Polyurethane, polysilane etc.The method of described formation one alignment film is silk screen print method or spraying process etc.In the present embodiment, go up formation one deck polyimide as alignment film in first polarizing layer, 220 surfaces by spraying process.
(2) form a plurality of small grooves in this alignment film surface, thereby form first both alignment layers 222.
The method of a plurality of small grooves of described formation can be friction method, inclination evaporation SiO
xEmbrane method and film carried out little groove facture.
Step 3: prepare a thin-film transistor display panel 300, this thin-film transistor display panel 300 comprises a plurality of thin film transistor (TFT)s 304, and the semiconductor layer in this thin film transistor (TFT) comprises a plurality of carbon nano-tube.
See also Fig. 7 and Fig. 8, the method for described preparation one thin-film transistor display panel 300 specifically may further comprise the steps:
(1) provide one the 3rd matrix 302, form a conductive layer 320 in described the 3rd matrix 302 surfaces, this conductive layer 320 of patterning forms a plurality of parallel column electrode and a plurality of grids 328 that are electrically connected with column electrode 330 that uniformly-spaced form at described the 3rd matrix surface.
The material of described the 3rd matrix 302 and size are identical with described second matrix 210.In the present embodiment, described the 3rd matrix 302 and second matrix are flexible material, make the touch LCD screen that makes by the embodiment of the invention be flexibility, thereby have bending property preferably.Described column electrode 330 can be conductive materials such as metal, alloy, indium tin oxide (ITO), antimony tin oxide (ATO), conductive silver glue, conducting polymer and metallic carbon nanotubes film with the material of grid 328.Different according to the material category that forms column electrode 330 and grid 328 can adopt distinct methods to form this column electrode 330 and grid 328.Particularly, when the material of this column electrode 330 and grid 328 is metal, alloy, ITO or ATO, can pass through methods such as evaporation, sputter, deposition, mask and etching and form column electrode 330 and grid 328, and make described grid 328 and corresponding column electrode 330 electrical connections.When the material of this column electrode 330 and grid 328 is conductive silver glue, conducting polymer or carbon nano-tube film, can be by printing coating or the method for directly sticking, this conductive silver glue or carbon nano-tube film are applied or attach to the 3rd matrix 302 surfaces, form column electrode 330 and grid 328, and make described grid 328 and corresponding column electrode 330 electrical connections.Usually, the thickness of this column electrode 330 and grid 328 is 0.5 nanometer～100 micron.In the present embodiment, conductive layer 320 is a metal, and the method that forms column electrode 330 and grid 328 is deposition, mask and etching.
(2) form one first insulation course 362 on the surface that described the 3rd matrix 302 is formed with column electrode 330 and grid 328, and cover described column electrode 330 and grid 328.
The material of this first insulation course 362 can be hard material or flexible materials such as benzocyclobutene (BCB), polyester or acryl resin such as silicon nitride, monox.Difference according to the material category of first insulation course 362 can adopt distinct methods to form this insulation course 362.Particularly, when the material of this first insulation course 362 is silicon nitride or monox, can form insulation course 362 by the method for deposition.When the material of this first insulation course 362 is benzocyclobutene (BCB), polyester or acryl resin, can form by the coated method of printing.Usually, the thickness of this first insulation course 362 is 0.5 nanometer～100 micron.
In the present embodiment, deposition processs such as using plasma chemical vapor deposition form a silicon nitride dielectric layer 362 in the 3rd matrix 302 surfaces, and cover column electrode 330 and grid 328.The thickness of described insulation course 362 is about 1 micron.
(3) form a plurality of carbon nano-tube semiconductor layers 360 on described insulation course 362 surfaces, each carbon nano-tube semiconductor layer 360 is corresponding with a grid 328.
In the present embodiment, the method that forms a carbon nano-tube semiconductor layer 360 on described first insulation course 362 surfaces specifically may further comprise the steps: at first, provide at least one carbon nano-tube film, carbon nano-tube oriented arrangement in this carbon nano-tube film; Secondly, described at least one carbon nano-tube film is layed in described the 3rd matrix 302 first insulation courses 362 surfaces, forms a carbon nanotube layer; At last, this carbon nanotube layer of patterning, corresponding each grid 328 forms a carbon nano-tube semiconductor layer 360 on first insulation course, 362 surfaces.
In the present embodiment, described carbon nano-tube film comprises the overlength carbon nano pipe film, and this overlength carbon nano pipe film comprises a plurality of overlength carbon nano pipes that are parallel to the carbon nano-tube film surface, and overlength carbon nano pipe is arranged in parallel with each other.A plurality of overlength carbon nano pipes are Single Walled Carbon Nanotube or the double-walled carbon nano-tube that aligns, and diameter is 0.5 nanometer～10 nanometers.Therefore, the carbon nano-tube orientation in described a plurality of carbon nano-tube semiconductor layer 360 is identical.
The preparation method of described overlength carbon nano pipe film may further comprise the steps: a substrate is provided; Form at least one banded catalyst film at described substrate surface; Adopt chemical vapour deposition technique at least one banded carbon nano pipe array of growing; And handle described at least one banded carbon nano pipe array, and make described at least one banded carbon nano pipe array along toppling over perpendicular to the direction of its length, form at least one banded carbon nano-tube film at substrate surface.
Described overlength carbon nano pipe film also can adopt following method preparation: a grower is provided, and this grower comprises a reaction chamber and is arranged at intervals at this reaction chamber interior a rotation platform and a stationary platform, reaction chamber comprises an air intake opening and a gas outlet, and described stationary platform is arranged near air intake opening on one side, and described rotation platform is arranged near the gas outlet on one side; Provide a growth substrate and to receive substrate, and at this growth substrate surface deposition one monodispersity catalyst layer; Described growth substrate is positioned on this stationary platform, described reception substrate is positioned on this rotation platform; Feed carbon source gas, along the direction growth overlength carbon nano pipe of air-flow; Stop to feed carbon source gas, overlength carbon nano pipe parallel and at interval be formed on the reception substrate surface; Change growth substrate, and repeatedly repeat the step of above-mentioned growth overlength carbon nano pipe, receiving at least one carbon nano-tube film of formation in the substrate; And described at least one carbon nano-tube film taken off from receiving substrate, thereby obtain a carbon nano-tube membrane structure.
The method of the carbon nano-tube film on described patterning first insulation course 362 surfaces can adopt methods such as laser ablation, plasma etching that this carbon nano-tube film is cut, thereby forms a carbon nano-tube semiconductor layer 360 in the position of first insulation course, 362 each grid 328 correspondence of surface.
(4) parallelly on described insulation course 362 surfaces uniformly-spaced form a plurality of row electrodes 340, described per two adjacent row electrodes 340 constitute a network 350 with described per two adjacent column electrodes 330, and in each carbon nano-tube semiconductor layer 360 a spaced surfaces formation one source pole 364 and a drain electrode 366, described source electrode 364 and corresponding row electrode 340 electrical connections.
Described row electrode 340, source electrode 364 and drain 366 material and formation method are identical with the formation method of described column electrode 330 and grid 328.Carbon nano-tube film in the carbon nano-tube semiconductor layer 360 is along essentially identical direction when overlapping, this source electrode 364 and drain and 366 should be formed at carbon nano-tube semiconductor layer 360 surfaces at interval along the orientation of carbon nano-tube in the carbon nano-tube semiconductor layer 360, thus the orientation that makes the carbon nano-tube in the carbon nano-tube semiconductor layer 360 all the direction along source electrode 364 to drain electrode 366 arrange.
Be appreciated that in order to obtain having the carbon nano-tube semiconductor layer 360 of better semiconductive, forming source electrode 364 and draining after 366, may further include the step of the metallic carbon nanotubes in the removal carbon nano-tube semiconductor layer 360.Secondly specifically may further comprise the steps: at first, provide an external power source,, the positive and negative polarities of external power source are connected to source electrode 364 and drain 366; At last, apply a voltage at the source electrode 364 and 366 two ends that drain, make metallic carbon nano-tube heating and ablation, obtain one and have better semiconductive carbon nano tube semiconductor layer 360 by external power source.This voltage is in 1～1000 volt of scope.
In addition, the method of metallic carbon nanotubes also can use hydrogen plasma, microwave, Terahertz (THz), infrared ray (IR), ultraviolet ray (UV) or visible light (Vis) to shine this carbon nano-tube semiconductor layer 360 in the above-mentioned removal carbon nano-tube semiconductor layer 360, make metallic carbon nano-tube heating and ablate the better carbon nano-tube semiconductor layer 360 of acquisition semiconductor.
(5) form one second insulation course 352 and cover described row electrode 340, source electrode 364, drain electrode 366 and carbon nano-tube semiconductor layer 360, form a plurality of through holes 356 in the position of the described second insulation course corresponding drain electrode 366 in 352 surfaces.
The material of described second insulation course 352, thickness and formation method are identical with material, thickness and the formation method of described first insulation course 362.The formation method of described through hole 356 is etching or ion bombardment.Described through hole 356 can make drain electrode 366 that second insulation course 352 covered form a conductive channel with extraneous, and promptly because second insulation course 352 at through hole 356 places is removed, therefore draining 366 can be electrically connected with the external world by this through hole 356.
(6) in described each network 350, form a pixel electrode 370, make that corresponding drain electrode 366 is electrically connected in described pixel electrode 370 and the network 350, thereby form a plurality of thin film transistor (TFT)s 304 on the 3rd matrix 302 surfaces, thereby obtain a thin film transistor (TFT) array, and then obtain a thin-film transistor display panel 300.
Described pixel electrode 370 is a conductive film, the material of this conductive film is a conductive material, when being used for LCD, this pixel electrode 370 may be selected to be transparency conducting layers such as indium tin oxide (ITO) layer, antimony tin oxide (ATO) layer, indium-zinc oxide (IZO) layer or metallic carbon nanotubes film.The area of described pixel electrode 370 is less than the area of corresponding network 350, and described pixel electrode 370 is electrically connected with drain electrode 366.The area of described pixel electrode 370 is 10 square microns～0.1 square millimeter.In the present embodiment, the material of described pixel electrode 370 is ITO, and area is 0.05 square millimeter.
Described pixel electrode 370 can prepare by the following method: the surface at second insulation course 352 of described the 3rd matrix 302 forms a conductive layer; And this conductive layer of patterning, in each network 350, form a pixel electrode 370, described pixel electrode 370 is electrically connected with drain electrode 366 by through hole 356.The method of described this conductive layer of patterning comprises methods such as laser ablation, plasma etching.
The method that forms conductive layer on the surface of described second insulation course 352 is vapour deposition method, sputtering method or sedimentation.Form in the process of conductive layer on the surface of described second insulation course 352, conductive material can fill up second insulation course 352 surface with the 366 corresponding through holes 356 that drain, thereby make drain electrode 366 be electrically connected with conductive layer, through hole 356 and corresponding pixel electrode 370 realization electrical connections are passed through in the drain electrode 366 behind patterned conductive layer each network 350 in.
See also Fig. 9, the present invention can further include and forms one second both alignment layers 306, is covered in the step that above-mentioned thin-film transistor display panel 300 is formed with the surface of a plurality of thin film transistor (TFT)s 304.
The method that described formation one second both alignment layers 306 is covered in these a plurality of thin film transistor (TFT)s 304 is identical in the method on above-mentioned first polarizing layer 220 surfaces with formation one first both alignment layers 222.Described formation one second both alignment layers 306 is covered in step that above-mentioned thin-film transistor display panel 300 is formed with the surface of a plurality of thin film transistor (TFT)s 304 and is one and can select step.
The present embodiment technical scheme further comprises formation one second polarizing layer 308 in the surface of described thin-film transistor display panel 300 away from second both alignment layers 306, thereby obtains the step of an infrabasal plate 30.
In the present embodiment, form second polarizing layer 308 and coexist away from the method on the surface of second both alignment layers 306 in described thin-film transistor display panel 300 that to form the method for first polarizing layer 220 identical for the surface of first matrix 206.Described second polarizing layer 308 comprises the orderly film of carbon nano-tube of a plurality of overlapping settings, and the orientation of carbon nano-tube is identical in adjacent two orderly films of carbon nano-tube.The light polarization direction of described second polarizing layer 308 is vertical mutually with the light polarization direction of described first polarizing layer 220.When using polarized light source, form one second polarizing layer 308 in the surface of described thin-film transistor display panel 300, thereby the step that obtains an infrabasal plate 30 is one can select step away from second both alignment layers 306.
Step 4: form a liquid crystal layer 40 between the thin film transistor (TFT) 304 of first polarizing layer 220 of above-mentioned touch-screen 200 and thin-film transistor display panel 300, thereby obtain a touch LCD screen 10.
Please refer to Fig. 2, described formation one liquid crystal layer 40 specifically may further comprise the steps thereby obtain a touch LCD screen 10 methods between the thin film transistor (TFT) 304 of first polarizing layer 220 of above-mentioned touch-screen 200 and thin-film transistor display panel 300:
(1) liquid crystal material is dripped to the surface of second both alignment layers 306 of first both alignment layers 222 of upper substrate 20 or infrabasal plate 30, thereby form a liquid crystal layer 40.
In the present embodiment, adopt dropper to draw the certain amount of liquid crystal material, drip to the surface of second both alignment layers 306 of infrabasal plate 30, form a liquid crystal layer 40, this liquid crystal layer 40 comprises the liquid crystal molecule that a plurality of length are bar-shaped.
(2) the described liquid crystal layer 40 of first both alignment layers 222 next-door neighbour of upper substrate 20 is laid, and the bearing of trend of a plurality of small grooves on second both alignment layers 306 of first both alignment layers 222 that guarantees upper substrate 20 and infrabasal plate 30 is vertical mutually.
(3) periphery with upper substrate 20 and infrabasal plate 30 adopts fluid sealant to seal.Present embodiment, described fluid sealant are 706B model sulphurated siliastic.Sealing glue is coated on the upper substrate 20 that is oppositely arranged and the edge of infrabasal plate 30, and placing 24 hours is solidifiable.
Be appreciated that can also form a liquid crystal layer 40 in the present embodiment in the following manner between the thin film transistor (TFT) 304 of first polarizing layer 220 of above-mentioned touch-screen 200 and thin-film transistor display panel 300, it specifically may further comprise the steps:
(1) with above-mentioned upper substrate 20 and infrabasal plate 30 parallel and settings at interval, and first both alignment layers 222 is relative with second both alignment layers 306.
(2) periphery with upper substrate 20 and infrabasal plate 30 adopts fluid sealant to seal, and keeps an aperture.
(3) by this aperture the certain amount of liquid crystal material is injected into formation one liquid crystal layer 40 between upper substrate 20 and the infrabasal plate 30, and sealing obtains a touch LCD screen 10.
Further, in order to keep the spacing between upper substrate 20 and the infrabasal plate 30, also can be before forming liquid crystal layer 40, prior to forming a plurality of transparent partition things (not showing among the figure) between upper substrate 20 and the infrabasal plate 30.The material of described sept and big I are selected according to actual needs.Present embodiment, (polyethylene, PE) bead is ultrasonic is dispersed in the absolute ethyl alcohol, draws a small amount of above-mentioned solution with dropper, drops in the surface of second both alignment layers 306 of infrabasal plate 30 with 1～10 micron tygon.After treating the ethanol volatilization, remaining PE bead will play the effect of sept.
The preparation method of the touch LCD screen 10 that the embodiment of the invention provides has the following advantages: one, because carbon nanotube layer has excellent mechanical characteristic and anti-bending, so, adopt above-mentioned carbon nanotube layer producing transparent conductive layer, can make transparency conducting layer have good toughness and physical strength.Further, cooperate, can prepare a flexible touch LCD screen 10, thereby be suitable on the flexible display apparatus with flexible substrate.They are two years old, owing to being pulled by a stretching tool, carbon nano-tube film that present embodiment provided obtains, this method needing no vacuum environment and heating process, so adopt above-mentioned carbon nano-tube film as transparency conducting layer and prepare the method for touch LCD screen 10, have that cost is low, environmental protection and an energy-saving advantages.They are three years old, the preparation method of the polarizing layer of the available technology adopting of comparing, because adopting, described first polarizing layer 220 directly lays the carbon nano-tube film preparation, and the carbon nano-tube in this carbon nano-tube film is arranged along same direction, has the polarisation effect, so can simplify the preparation method of this touch LCD screen 10.Its four because the carbon nano-tube film that provides of present embodiment can be bonded on the matrix by a hot pressing, thereby reduced cost of manufacture, simplified manufacture craft.Further, the hot pressing of present embodiment, temperature requirement is lower, thereby less to the temperature limitation of matrix material.
In addition, those skilled in the art also can do other variations in spirit of the present invention, and certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (16)
1. the preparation method of a touch LCD screen, it may further comprise the steps:
One touch-screen is provided, and this touch-screen comprises two transparency conducting layers, and this transparency conducting layer comprises at least one carbon nano-tube film, and this carbon nano-tube film comprises a plurality of carbon nano-tube that align, and joins end to end between the adjacent carbon nano-tube of orientation;
Form the surface of one first polarizing layer in above-mentioned touch-screen;
One thin-film transistor display panel is provided, and this thin-film transistor display panel comprises a plurality of thin film transistor (TFT)s, and the semiconductor layer in this thin film transistor (TFT) comprises a plurality of carbon nano-tube, and these a plurality of carbon nano-tube align along the direction of thin film transistor (TFT) source electrode to drain electrode; And
Encapsulate a liquid crystal layer between first polarizing layer and thin-film transistor display panel of above-mentioned touch-screen.
2. the preparation method of touch LCD screen as claimed in claim 1 is characterized in that, the preparation method of described touch-screen specifically may further comprise the steps:
One first matrix is provided, and it comprises two facing surfaces;
Form the surface of one first transparency conducting layer in described first matrix;
The compartment of terrain forms two first electrodes in the two ends of above-mentioned first transparency conducting layer or the two ends of described first matrix, and is electrically connected with this first transparency conducting layer, forms one first battery lead plate;
One second matrix is provided, and it comprises two facing surfaces;
Form one second transparency conducting layer in described second matrix one surface, the compartment of terrain forms two second electrodes in the two ends of this second transparency conducting layer or the two ends of described second matrix, and is electrically connected with this second transparency conducting layer, forms one second battery lead plate; And
Encapsulate above-mentioned first battery lead plate and second battery lead plate, obtain a touch-screen.
3. the preparation method of touch LCD screen as claimed in claim 2 is characterized in that, describedly forms first transparency conducting layer respectively and the method for second transparency conducting layer in the surface of above-mentioned first matrix and second matrix specifically may further comprise the steps:
Provide at least one carbon nano-tube film, the carbon nano-tube oriented arrangement in this carbon nano-tube film; And the surface that described at least one carbon nano-tube film is layed in described first matrix or second matrix.
4. the preparation method of touch LCD screen as claimed in claim 3 is characterized in that, described providing after at least one carbon nano-tube film comprises that further one adopts the step of the above-mentioned carbon nano-tube film of laser treatment.
5. the preparation method of touch LCD screen as claimed in claim 3, it is characterized in that, at least one carbon nano-tube film of described laying is after the surface of described matrix, further comprise the step that adopts organic solvent to handle this carbon nano-tube film, specifically comprise: organic solvent is dropped in the surface of described at least one carbon nano-tube film or the above-mentioned whole container that fills organic solvent of putting into of matrix that is equipped with at least one carbon nano-tube film is soaked into by test tube.
6. the preparation method of touch LCD screen as claimed in claim 2 is characterized in that, describedly forms first transparency conducting layer respectively and the method for second transparency conducting layer in the surface of above-mentioned first matrix and second matrix specifically may further comprise the steps:
Apply a macromolecule material solution layer in the surface of described matrix;
Lay at least one carbon nano-tube film in this macromolecule material solution layer, this macromolecule material solution is evenly spread in this carbon nano-tube film; And
Solidify described Polymer Solution.
7. the preparation method of touch LCD screen as claimed in claim 2 is characterized in that, above-mentioned first battery lead plate of described encapsulation and second battery lead plate, and the method that obtains a touch-screen specifically may further comprise the steps:
Form the periphery of an insulation course in second transparency conducting layer of described second battery lead plate; And
Cover first battery lead plate in described insulation course, so that described first transparency conducting layer and described second transparency conducting layer are oppositely arranged, obtain a touch-screen, and the straight line at two first electrode places on first battery lead plate and the straight line at two second electrode places on second battery lead plate are intersected.
8. the preparation method of touch LCD screen as claimed in claim 1 is characterized in that, the preparation method of described touch LCD screen further may further comprise the steps:
Form the surface of first both alignment layers in first polarizing layer of this touch-screen; And
Form second both alignment layers in the surface of this thin-film transistor display panel near liquid crystal layer, described liquid crystal layer is formed between described first both alignment layers and second both alignment layers.
9. the preparation method of touch LCD screen as claimed in claim 1 is characterized in that, described formation first polarizing layer specifically may further comprise the steps in the method for above-mentioned touch screen surface:
Provide at least one carbon nano-tube film, carbon nano-tube oriented arrangement in this carbon nano-tube film; And
At least one carbon nano-tube film is laid immediately on the surface of described touch-screen, or a plurality of carbon nano-tube films are parallel and seamlessly lay or the overlapping surface that is arranged on described touch-screen.
10. the preparation method of touch LCD screen as claimed in claim 9, it is characterized in that, after described preparation one thin-film transistor display panel, comprise further forming one second polarizing layer that it may further comprise the steps in the surface of this thin-film transistor display panel away from described liquid crystal layer:
Provide at least one carbon nano-tube film, carbon nano-tube oriented arrangement in this carbon nano-tube film; And the surface that at least one carbon nano-tube film is laid immediately on described touch-screen, or a plurality of carbon nano-tube films are parallel and seamlessly lay or the overlapping surface that is arranged on described thin-film transistor display panel away from described liquid crystal layer, and the bearing of trend of carbon nano-tube is vertical with the bearing of trend of carbon nano-tube in first polarizing layer in this carbon nano-tube film.
11. preparation method as claim 9 or 10 described touch LCD screens, it is characterized in that, when described first polarizing layer or second polarizing layer comprise a plurality of carbon nano-tube film, the orientation of the carbon nano-tube in this described first polarizing layer in a plurality of carbon nano-tube films is identical, and the orientation of the carbon nano-tube in described second polarizing layer in a plurality of carbon nano-tube films is identical.
12. the preparation method of touch LCD screen as claimed in claim 1 is characterized in that, the preparation method of described thin-film transistor display panel may further comprise the steps:
One the 3rd matrix is provided, forms a conductive layer in described the 3rd matrix surface, this conductive layer of patterning forms a plurality of parallel column electrode and a plurality of grids that are electrically connected with this column electrode that uniformly-spaced form at described the 3rd matrix surface;
Form one first insulation course on the surface that described the 3rd matrix is formed with column electrode and grid, and cover described column electrode and grid;
Form a plurality of carbon nano-tube semiconductor layers at described surface of insulating layer, each carbon nano-tube semiconductor layer is corresponding with a grid;
Uniformly-spaced form a plurality of row electrodes in that described surface of insulating layer is parallel, form an one source pole and a drain electrode at interval in each carbon nano-tube semiconductor layer surface, described source electrode and corresponding row electrode electrical connection, described per two adjacent source electrodes and described per two adjacent column electrodes constitute a network;
Form one second insulation course and cover described row electrode, source electrode, drain electrode and carbon nano-tube semiconductor layer, form a plurality of through holes in the position of the corresponding drain electrode of described second surface of insulating layer; And
In described each network, form a pixel electrode, make corresponding drain electrode electrical connection in described pixel electrode and the network, thereby obtain a thin film transistor (TFT) array.
13. the preparation method of touch LCD screen as claimed in claim 12 is characterized in that, the method for described patterned conductive layer comprises laser ablation method and plasma etching method.
14. the preparation method of touch LCD screen as claimed in claim 12 is characterized in that, a plurality of carbon nano-tube semiconductor layers of described formation specifically may further comprise the steps in the method for described surface of insulating layer:
Provide at least one carbon nano-tube film, carbon nano-tube oriented arrangement in this carbon nano-tube film;
Described at least one carbon nano-tube film is layed in the 3rd matrix first surface of insulating layer; And
This at least one carbon nano-tube film of patterning forms semi-conductor layer at corresponding each grid of first surface of insulating layer.
15. the preparation method of touch LCD screen as claimed in claim 12 is characterized in that, the material of described pixel electrode is indium tin oxide, antimony tin oxide, indium-zinc oxide or metallic carbon nanotubes film.
16. the preparation method of touch LCD screen as claimed in claim 12, it is characterized in that, after forming source electrode and drain electrode, further comprise the step of removing metallic carbon nanotubes in the carbon nano-tube semiconductor layer, the method of removing comprises employing hydrogen plasma, microwave, Terahertz, infrared ray, ultraviolet ray or radiation of visible light carbon nano-tube semiconductor layer, or applies voltage at carbon nano-tube semiconductor layer two ends.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100046199A CN101625468B (en) | 2008-07-09 | 2009-02-20 | Touch liquid crystal display preparation method |
| US12/459,566 US8237677B2 (en) | 2008-07-04 | 2009-07-02 | Liquid crystal display screen |
| US12/583,162 US8237680B2 (en) | 2008-07-04 | 2009-08-13 | Touch panel |
| US12/583,160 US8228308B2 (en) | 2008-07-04 | 2009-08-13 | Method for making liquid crystal display adopting touch panel |
| US12/583,161 US8237679B2 (en) | 2008-07-04 | 2009-08-13 | Liquid crystal display screen |
| US12/584,410 US8199123B2 (en) | 2008-07-04 | 2009-09-03 | Method for making liquid crystal display screen |
| US12/584,415 US8105126B2 (en) | 2008-07-04 | 2009-09-03 | Method for fabricating touch panel |
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| CN2009100046199A CN101625468B (en) | 2008-07-09 | 2009-02-20 | Touch liquid crystal display preparation method |
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| US8604332B2 (en) * | 2010-03-04 | 2013-12-10 | Guardian Industries Corp. | Electronic devices including transparent conductive coatings including carbon nanotubes and nanowire composites, and methods of making the same |
| CN101852934A (en) * | 2010-05-31 | 2010-10-06 | 北京富纳特创新科技有限公司 | Touch liquid crystal display |
| KR101389716B1 (en) * | 2012-01-30 | 2014-04-28 | 크루셜텍 (주) | Input apparatus, terminal and packaging method |
| CN103663406B (en) * | 2012-09-11 | 2015-09-02 | 北京富纳特创新科技有限公司 | The preparation method of carbon nano-tube compound film |
| CN102968240A (en) * | 2012-12-17 | 2013-03-13 | 苏州合美硕触控技术有限公司 | Capacitive bending type touch display module and manufacturing method thereof |
| CN103700430B (en) * | 2013-12-25 | 2017-12-05 | 中山大学 | A kind of conductive film being distributed in order and its manufacture method |
| CN108023016B (en) * | 2016-10-31 | 2020-07-10 | 清华大学 | Preparation method of thin film transistor |
| KR20200085946A (en) | 2017-03-28 | 2020-07-15 | 닛토덴코 가부시키가이샤 | In-cell liquid crystal panel and liquid crystal display device |
| CN110462472A (en) * | 2017-03-28 | 2019-11-15 | 日东电工株式会社 | Polarizing coating with adhesive phase, polarizing coating of the inline type liquid crystal display panel with adhesive phase, inline type liquid crystal display panel and liquid crystal display device |
| CN109406586A (en) * | 2017-08-18 | 2019-03-01 | 蓝思科技（长沙）有限公司 | Production method of carbon nano tube sensor and application thereof |
| CN108766934A (en) * | 2018-05-24 | 2018-11-06 | 上海九山电子科技有限公司 | A kind of LED array method for preparing substrate, LED array substrate and LED display panel |
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| KR20030055856A (en) * | 2001-12-27 | 2003-07-04 | 엘지.필립스 엘시디 주식회사 | Fabricated Method Of Liquid Crystal Display Apparatus Integrated Film Type Touch Panel |
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|---|---|
| JP5460153B2 (en) | 2014-04-02 |
| CN101625468A (en) | 2010-01-13 |
| JP2010020313A (en) | 2010-01-28 |
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| CI01 | Publication of corrected invention patent application |
Correction item: Patentee|Address|Co-patentee Correct: Tsinghua University| 100084. Haidian District 1, Tsinghua Yuan, Beijing, Tsinghua University, Room 401, research center of Tsinghua Foxconn nanometer science and technology|Hung Fujin Precision Industrial (Shenzhen) Co., Ltd. False: Hongfujin Precision Industry (Shenzhen) Co., Ltd.|518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Number: 12 Volume: 27 |
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Correction item: Patentee|Address|Co-patentee Correct: Tsinghua University| 100084. Haidian District 1, Tsinghua Yuan, Beijing, Tsinghua University, Room 401, research center of Tsinghua Foxconn nanometer science and technology|Hung Fujin Precision Industrial (Shenzhen) Co., Ltd. False: Hongfujin Precision Industry (Shenzhen) Co., Ltd.|518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Number: 12 Page: The title page Volume: 27 |
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Free format text: CORRECT: PATENTEE; ADDRESS; CO-PATENTEE; FROM: HONGFUJIN PRECISION INDUSTRY (SHENZHEN) CO., LTD.;518109 NO. 2, EAST RING 2ND ROAD, YOUSONG 10TH INDUSTRIAL ZONE, LONGHUA TOWN, BAOAN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE TO: TSINGHUA UNIVERSITY;100084 ROOM 401, TSINGHUA-FOXCONN NANOTECHNOLOGY RESEARCH CENTER, TSINGHUA UNIVERSITY, NO. 1, TSINGHUA PARK, HAIDIAN DISTRICT, BEIJING; HONGFUJIN PRECISION INDUSTRY (SHENZHEN) CO., LTD. |