CN101604620B - Method for making chemical preparation flow, method and device for manufacturing ic apparatus by using the same - Google Patents
Method for making chemical preparation flow, method and device for manufacturing ic apparatus by using the same Download PDFInfo
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- CN101604620B CN101604620B CN2009101455569A CN200910145556A CN101604620B CN 101604620 B CN101604620 B CN 101604620B CN 2009101455569 A CN2009101455569 A CN 2009101455569A CN 200910145556 A CN200910145556 A CN 200910145556A CN 101604620 B CN101604620 B CN 101604620B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Weting (AREA)
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Abstract
In a method for making chemical preparation flow to process a substrate, the chemical preparation is fed into a pool, the substrate is in the pool and in parallel with bottom of the pool, and the substrate is soaked in the preparation. Then the substrate is processed with the chemical preparation, therefore a first force is applied to the substrate in a first direction, and the substrate deforms partially by the first force. The chemical preparation around the deformed part of the substrate is discharged out of the pool, thus a second force is applied to the substrate in a second direction opposite to the first direction. Therefore, the deformed part of the substrate can be easily smoothed in processing in the pool.
Description
Technical field
The present invention relates to a kind of method that makes that chemicals flows; And use said method to make the method and apparatus of IC-components, relate in particular to the method that a kind of chemicals that makes clean solution and etching solution and so on flows and use said method to make the method and the device of the IC-components of semiconductor device or flat panel display equipment and so on
Background technology
Usually, the IC-components of semiconductor device or flat panel display equipment and so on needs to use the repetitive of clean solution and etching solution and so on chemicals to handle in manufacture process usually.Use the cell processing of chemicals to comprise the clean of using clean solution and the etch processes of using etching solution, and said cell processing is carried out in accommodating the pond of chemicals.The cell processing of chemicals is undertaken by immersion method and flow method usually in the said use pond.In the immersion method, the substrate that will be used for making integrated circuit immerses in the chemicals in pond, and said substrate is immersed in the chemicals in the pond.In the flow method, the substrate that will be used for making integrated circuit is put into the pond, and the chemicals that is used for this cell processing flows the pond so that said chemicals flows to the surface of said substrate.Semiconductor wafer is as the substrate of making semiconductor device, and the large-size glass substrate is as the substrate of making flat panel display equipment.
Use the cell processing of chemicals in the pond to have such problem, promptly substrate is out of shape in the pond easily.Particularly, often record be used for display device the large-size glass substrate in the pond gross distortion.The distortion of substrate in the pond is because the direction that flows to of the chemicals in substrate position and the pond causes to a great extent.In the existing use pond in the cell processing of chemicals; Substrate is immersed in the chemicals with a kind of like this configuration usually; Promptly the bottom surface of this substrate is parallel with the bottom in pond; Perhaps chemicals flows on the bottom surface of substrate from the bottom in pond, and substrate bears the influence of buoyancy and/or floating force in the pond like this.Buoyancy or floating force make substrate be out of shape.
Cause various problems in the cell processing of substrate distortion meeting chemicals in using the pond, and can be caused flase drop when being sent to another process chamber when substrate comprises the delivery unit of the transducer that the substrate that from the pond, comes out is detected.
Summary of the invention
Embodiment provides the method that makes that chemicals flows, and said method makes that the substrate distortion in the pond is minimum.
Embodiment also provides a kind of and has used the above-mentioned method of liquid flow that makes to make the method for IC-components.
Embodiment also provides a kind of device that carries out the method for above-mentioned manufacturing IC-components.
According to some embodiments of the present invention, a kind of mobile method so that substrate is handled of chemicals that makes is provided.Said chemical reagent is fed in the pond, and said substrate is arranged in said pond, and said substrate parallel is in the bottom in said pond, and said substrate is immersed in the said chemicals.Use said chemicals on said substrate, to handle then, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape.The chemicals of the variant part of said substrate below is discharged said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
According to some embodiments of the present invention, a kind of method of making IC-components is provided.At first, chemical reagent is fed in the pond, and substrate is immersed in the said chemical reagent, so that said substrate is immersed in the chemicals in the said pond.Use said chemicals that said substrate is handled, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape.The chemicals of the variant part of said substrate below is discharged said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
Among one embodiment, from the upper surface of said substrate make progress direction apply making a concerted effort of buoyancy, floating force or they, and apply the power of pulling from the prone direction of the following table of said substrate.
Among one embodiment, said substrate immerses in the said chemicals in such a way, and promptly the lower surface of said substrate is parallel with the bottom in said pond.
Among one embodiment, the chemicals of the variant part of said substrate below is discharged said pond through the bottom in said pond.
Among one embodiment, the chemicals of discharging is fed into said pond again, comes to utilize again said chemicals by this.
Among one embodiment, said substrate comprises semiconductor wafer that is used for producing the semiconductor devices and the glass substrate that is used to make flat panel display equipment.
According to some embodiments of the present invention, a kind of method of making IC-components is provided.Substrate is conveyed into the pond, and in said pond, said substrate is not immersed in the chemical reagent fully.Said chemicals is fed in the said pond, so that said substrate is immersed in the said chemicals.Use said chemicals on said substrate, to handle, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape.The chemicals of the variant part of said substrate below is discharged said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
Among one embodiment, said substrate is conveyed in the said pond, so that the lower surface of said substrate is parallel with the bottom in said pond.Concrete, the sidewall through said pond is conveyed into said substrate in the said pond.Roller through being installed in the said pond is conveyed into said substrate in the said pond.Said roller comprises the upper roller that contacts with the periphery of the upper surface of said substrate, and the following roller that contacts with the lower surface of said substrate.
Among one embodiment, said chemicals is fed in the said pond in such a way, and promptly said chemicals is on the lower surface that flows to said substrate below the said substrate.The said chemicals of a part flow to central part from the periphery of said substrate.
Among one embodiment, the variant part of said substrate comprises the central part of said substrate.The direction that makes progress from the upper surface of said substrate applies making a concerted effort of buoyancy, floating force or they, and applies the power of pulling from the prone direction of the following table of said substrate.
Among one embodiment, the chemicals of the variant part of said substrate below is discharged said pond through the bottom in said pond.
Among one embodiment, the chemicals of discharging is fed into said pond again, comes to utilize again said chemicals by this.
According to some embodiments of the present invention, a kind of device that is used to make IC-components is provided, comprise pond, chemicals feeder and chemicals displacer.Said pond comprises chemicals and is immersed in the substrate in the said chemicals in the pond.Said substrate is handled with said chemicals in said pond, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape.Said chemicals feeder is fed into said pond with said chemicals.Said chemicals displacer is discharged said pond with the chemicals of the variant part of said substrate below, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
Among one embodiment, said chemicals displacer comprises the discharge pipe that extends to outside, said pond from the zone of the variant part below of said substrate, and the excavationg pump that is connected to said discharge pipe.The bottom of said discharge pipe through said pond extends at the bottom of the said pond outside.
Among one embodiment, said device also comprises the chemicals circulator that is used for the chemicals of discharging through said chemicals displacer is fed into again said pond.
Among one embodiment, said device also comprises the transducer that the variant part of said substrate is detected and generates detection signal, and the controller of said chemicals displacer being controlled according to said sensor signal.
According to some embodiments of the present invention, a kind of device of making IC-components is provided, comprise pond, roller, chemicals feeder and chemicals displacer.Said pond comprises chemicals and is immersed in the substrate in the said chemicals in the pond, and at least one pair of is positioned at the transmission lock of side-walls.Said substrate is handled with said chemicals in said pond, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape.The said roller that is used for transmitting said substrate is positioned at the flat position of transmission water seal of the said pond and the sidewall in said pond, thus the lower surface of said substrate by the bottom water level land transmission in said roller and said pond through said transmission lock.Said chemicals feeder is fed into said pond with said chemicals.Said chemicals displacer is discharged said pond with the chemicals of the variant part of said substrate below, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
Among one embodiment; Said device also comprises the lock window of the sidewall that at least one pair of is mounted to said pond; Said at least one pair of lock window is respectively applied for and opens and closes said transmission lock; Said substrate transmits through said transmission window when said lock window is opened, and said lock window is closed when said substrate is handled in said pond.For example, said roller comprises the upper roller that contacts with the periphery of the upper surface of said substrate, and the following roller that contacts with the lower surface of said substrate.Said roller down prevents by this that across the lower surface of said substrate said substrate is sagging in being conveyed into the process in said pond.
Among one embodiment, after said substrate was placed in the said pond, said chemicals feeder was fed into said chemicals in the said pond, is immersed in the said chemicals until said substrate.For example, said chemicals feeder comprises the supply pipe in the zone that extends to the below of substrate described in the said pond from the outside in said pond and the supply pump that is connected to said supply pipe.Said supply pipe passes the bottom in said pond.Said chemicals supply pipe is installed in such a way, and promptly the part of said chemicals flow to central part from the periphery of said substrate.
Among one embodiment, said chemicals displacer comprises the discharge pipe that extends to outside, said pond from the zone of the variant part below of said substrate, and the excavationg pump that is connected to said discharge pipe.For example, the bottom of said discharge pipe through said pond extends at the bottom of the said pond outside.
Among one embodiment, said device also comprises the chemicals circulator that is used for the chemicals of discharging through said chemicals displacer is fed into again said pond.
According to some embodiments of the present invention, when on using the substrate of chemicals in the pond, handling, can be enough to prevent that through a part of chemical reagent below the variant part of discharging substrate substrate from deforming.Because of the discharge of chemicals, with the direction in the opposite direction of buoyancy and floating force on generate and pull power, buoyancy and floating force are almost pulled dynamic balance or counteracting thus.Therefore, can prevent in the pond to use chemicals to carry out that substrate deforms in the processing procedure fully.Especially, the modification of only device of existing manufacturing IC-components being made slightly prevents that with regard to being enough to substrate from deforming because of chemicals.
Thus; Be enough to prevent to be out of shape the multiple processing defective that causes by substrate; Promote the reliability of cell processing by this, and substrate stably is transmitted into another process chamber and does not cause the substrate flase drop, promote the productivity ratio of IC-components by this through delivery unit.
Description of drawings
Through the following detailed description that combines accompanying drawing, can more be expressly understood embodiment.Fig. 1～10 representatives non-restrictive example described here.
Fig. 1 is the structure chart that illustrates according to the device of the manufacturing integrated circuit of first embodiment of the invention;
Fig. 2 is for making the flow chart of the method for IC-components according to the use of embodiment of the invention device shown in Figure 1;
Fig. 3 illustrates the flow chart that uses device shown in Figure 1 to make the method treatment step of IC-components according to another embodiment of the present invention;
Fig. 4 is the structure chart according to the device of the manufacturing IC-components of second embodiment of the invention;
Fig. 5 is the part enlarged drawing of transfer path that the pond side-walls of device shown in Figure 4 is shown; And
Fig. 6 illustrates the flow chart of making the method treatment step of IC-components according to the use of embodiment of the invention device shown in Figure 4.
Embodiment
The application requires the priority to the 2008-53653 korean patent application of Korea S Department of Intellectual Property (KIPO) submission on June 9th, 2008 according to 119 sections of the 35th of United States codes, and its content is incorporated in this through the mode of quoting fully.
Referring to the accompanying drawing that the embodiment of the invention is shown, hereinafter will be described a plurality of embodiment of the present invention in more detail.Yet the present invention can realize with many different forms, and should not be construed as the restriction of the embodiment that receives in this proposition.On the contrary, it is abundant and complete open in order to reach proposing these embodiment, and makes the technical staff in present technique field understand scope of the present invention fully.In these accompanying drawings, for clarity sake, possibly amplify the size and the relative size in layer and zone.
Should understand; When element or layer are called another element or layer " on ", in another element or layer " connection " or " coupling "; It can be directly on another element or layer, directly is connected with other element or layer or is coupled, perhaps existence occupy therebetween element or layer.In contrast, when element is called " directly on another element or layer ", in another element or layer " directly being connected " or " direct be coupled ", do not exist the element that occupy therebetween or layer.Same numeral is meant components identical in the whole part of specification.As used herein, term " and/or " comprise any or all combination of the Listed Items that one or more is relevant.
Can use first, second, third to wait and describe different elements, assembly, zone, layer and/or part although should be understood that this paper, these elements, assembly, zone, layer and/or part are not the restriction that receives these terms.These terms only are used to make an element, assembly, zone, layer or part and another zone, layer or part difference to come.Thus, hereinafter is referred to as first element, assembly, zone, layer or part and can be described as second element, assembly, zone, layer and/or part, and does not break away from instruction of the present invention.
Statement with space correlation; As " ... under (beneath) ", " ... below (below) ", " down (lower) ", " ... top (above) ", " going up (upper) " etc., use in this article is for the relation of element shown in the statement figure or parts and another element or parts easily.The statement that should be understood that these and space correlation except that orientation shown in the figure, also be intended to contain this equipment use or work in different azimuth.For example, if this equipment upset among the figure, the element that is described as " under other element or parts ", " below other element or parts " then can be confirmed as " above other element or parts ".This exemplary statement thus, " ... the below " can contain simultaneously " ... the top " with " ... the below " both.This equipment can be other towards (revolve turn 90 degrees or other towards), and corresponding explanation is also done in the statement of these and space correlation used herein.
Statement used herein only is used to describe certain embodiments, and and is not intended to limit the present invention.Described in this paper, the article of singulative is intended to comprise plural form, shows clearly only if its context has in addition.Will also be understood that; In this specification, use in the statement " comprising "; Offered some clarification on and had described parts, integral body, step, operation, element and/or assembly, one or more other parts, integral body, step, operation, element, assembly and/or their combination have not been arranged but do not get rid of to exist or add.
Embodiments of the invention are to describe with reference to the schematic sectional view of idealized embodiment of the present invention (and intermediate structure) in this article.Like this, expection for example can produce because of manufacturing process and/or tolerance and cause variation in shape.Thus, embodiments of the invention should not be construed as it is constrained to the specific region shape shown in this paper, also for example should comprise the form variations that causes because of manufacturing.For example, the implantation zone that is shown rectangle generally has circle or arcuate structure at its edge, with and/or in gradient implantation degree, but not change to the non-binary of implanting the zone from implanting the zone.Equally, because of implanting the buried zone that forms, possibly cause forming some implantation in buried zone with on through the zone between the surface of its generation implantation.Thus, the essence in the zone shown in the figure is schematically, and its shape and be not intended to illustrate the accurate shape of component area, also is not intended to limit scope of the present invention.
Only if definition separately, the technical staff institute common sense in the meaning of employed all terms of this paper (comprising scientific and technical terminology) and present technique field consistent.Should also be understood that such as defined term in the general dictionary should be interpreted as with correlative technology field in aggregatio mentium, and should not be construed as Utopian or excessive mechanical implication, only if clearly definition is arranged in the text in addition.
Hereinafter will be explained in detail embodiment with reference to accompanying drawing.
First embodiment
Fig. 1 is the structure chart that illustrates according to the device of the manufacturing integrated circuit of first embodiment of the invention.
With reference to figure 1, comprise pond 11, chemicals feeder 13, chemicals displacer 15 according to the device 100 of the manufacturing integrated circuit of first embodiment, and comprise chemicals circulator 17, transducer 19 and controller 21.For example, integrated circuit is included in semiconductor device of making on the semiconductor wafer and the flat panel display equipment of on glass substrate, making.
Accommodate chemicals in the pond 11.The example of said chemicals comprises clean solution and etching solution, and the device of said thus manufacturing integrated circuit comprises cleaning device and Etaching device.
Chemicals is supplied in the pond through chemicals feeder 13, make the chemicals that accommodates scheduled volume in the said pond 11.Among one embodiment, chemicals feeder 13 is positioned at the below of substrate 10, and chemicals flows on the bottom surface of substrate 10 thus, and is represented like label 23.
Among one embodiment, chemicals feeder 13 comprises supply pipe 13a that is positioned at substrate 10 belows and the supply pump 13b that is connected to supply pipe 13a.Also can the supply valve (not shown) be mounted to supply pipe 13a and open and close chemicals feeder 13.Supply pump 13b supplies that chemicals be provided to the supply pipe 13a from the exterior reservoir of chemicals.Although the foregoing description has disclosed the below that chemicals feeder 13 is positioned at substrate 10, can flow at chemicals under the condition in pond 11, can make known any other modification of those skilled in the art to chemicals feeder 13.For example, the quantity of chemicals feeder 13 and position are not limited to shown in Figure 1, and the chemicals feeder 13 of sufficient amounts is placed in a plurality of appropriate positions that thus can be in pond 11.
Chemicals displacer 15 with chemicals be discharged to pond 11 around.Concrete, the substrate 10 in being immersed in chemicals stands to handle and when in pond 11, partly being out of shape, and the chemicals of the variant part below of substrate 10 11 is discharged from the pond through chemicals displacer 15.Therefore, chemicals displacer 15 is positioned at the below of the variant part of the substrate 10 under the substrate 10, and chemicals thus can be from below, bottom surface 11 discharges from the pond of substrate 10.Among one embodiment, chemicals displacer 15 comprises discharge pipe 15a and is connected to the excavationg pump 15b of discharge pipe 15a, and said discharge pipe 15a is connected to 11 ones in pond and below the variant part of substrate 10, extends.In the present embodiment, discharge pipe 15a passes the bottom in pond 11, so that chemicals is expelled to the outside in pond 11 from the zone of the variant part below of substrate 10 through discharge pipe 15a.Excavationg pump 15b can be applied to discharge pipe 15a effectively chemicals is discharged pond 11 with pressure.Also can the dump valve (not shown) be mounted to the opening and closing that discharge pipe 15a controls discharge pipe 15a.The quantity of chemicals displacer 15 is unrestricted, and chemicals displacer 15 can be positioned at the below of each variant part of substrate 10 thus.
Therefore, comprise pond 11, chemicals feeder 13 and chemicals displacer 15, can prevent that thus substrate from deforming owing to chemicals flows on the substrate 10 according to the device of the manufacturing IC-components of first embodiment.
Hereinafter will be described the method for using device shown in Figure 1 to make IC-components in detail with reference to figure 2.
Fig. 2 illustrates the flow chart of making the method treatment step of IC-components according to the use of embodiment of the invention device shown in Figure 1.Among Fig. 2, in the device 100 that comprises pond 10, chemicals feeder 13 and chemicals displacer 15, make the treatment step of integrated circuit.
With reference to figure 2, at first chemicals is fed into pond 11 (step S201).For example, chemicals is through in the chemicals feeder 13 inflow ponds 11, and pond 11 accommodates the scheduled volume chemicals thus.
Then, with in the chemicals in the substrate 10 immersion ponds 11 of making IC-components (step S203).Among one embodiment, substrate 10 is immersed in the chemicals in pond 11 in such a way, and promptly the bottom surface of substrate 10 is parallel with the bottom in pond 11.When substrate 10 is immersed chemicals, on substrate 10, carry out the processing (step S205) that clean and etch processes etc. are used chemicals.For example, in chemicals, substrate 10 is scrubbed and swung, perhaps be fixed in and make chemicals below substrate 10, flow under the situation in the chemicals at substrate.
When substrate 10 immersion ponds 11, substrate 10 partly is out of shape because of 25 represented buoyancy and/or the floating forces of the label among Fig. 1.Substrate possibly bear buoyancy or floating force separately, also possibly bear making a concerted effort of the two.The chemicals of the variant part below of substrate 10 is through chemicals displacer 15 11 discharges (step S207) from the pond.When the chemicals of the variant part of substrate 10 below through chemicals displacer 15 from the pond 11 when discharging, be applied with the pull power represented on the substrate bottom surface under the substrate variant part like the label among Fig. 1 27.Therefore, this direction that pulls force direction and this buoyancy and floating force is opposite basically, and this buoyancy and floating force are almost pulled dynamic balance or counteracting thus.Therefore, can be enough to prevent deform in substrate 10 process that chemicals is handled in using the pond.
According to the first embodiment of the present invention, the chemicals of the variant part of substrate below is discharged from the pond through the chemicals ejector, can be enough to thus to prevent in substrate is dipped into the processing procedure of chemicals in the pond, the substrate distortion takes place.
Should understand like the technical staff in present technique field; Although having disclosed substrate, the foregoing description is out of shape at central part; And the chemical reagent displacer is positioned at the below of the bottom surface, center of substrate; But the variant part of substrate can be according to treatment conditions and environment change, and the position of chemicals displacer also can change according to the deformation position of substrate.In addition; Should understand like the technical staff in present technique field; Chemicals is discharged from the pond from the below of substrate although the foregoing description has disclosed that the chemicals displacer is arranged in the below of substrate; But the chemicals displacer can be arranged in any position in pond, as long as the power of pulling and buoyancy, floating force or their resultant direction are applied on the substrate on the contrary.
Among the embodiment, the device 100 of making integrated circuit among Fig. 1 also comprises chemicals circulator 17, transducer 19 and controller 21.
Chemicals circulator 17 makes that discharging chemicals from chemicals displacer 15 flows back to the pond 11, circulates by this or utilizes from the pond 11 chemicals of discharging again.For example, chemicals circulator 17 can be connected between chemicals displacer 15 and the pond 11, and the chemicals of discharging from chemicals displacer 15 like this can directly flow back to pond 11 through chemicals circulator 17.Perhaps, chemicals circulator 17 can be connected between chemicals displacer 15 and the chemicals feeder 13, and the chemicals of discharging from chemicals displacer 15 like this can flow back to pond 11 through chemicals feeder 13.Therefore, chemicals can through chemicals circulator 17 in the pond 10 outside and inner loop, the amount of the chemicals in the pond 11 keeps constant basically thus, reduces the consumption of chemicals by this.
Hereinafter, describe the method that the device that uses Fig. 1 is made IC-components in detail with reference to figure 3.
Fig. 3 illustrates the flow chart that uses device shown in Figure 1 to make the method treatment step of IC-components according to another embodiment of the present invention.Among Fig. 3, in the device 100 that comprises pond 11, chemicals feeder 13, chemicals displacer 15, chemicals circulator 17, transducer 19 and controller 21, make the treatment step of integrated circuit.
With reference to figure 3, at first chemicals is fed into pond 11 (step S301).For example, chemicals is through in the chemicals feeder 13 inflow ponds 11, and pond 11 accommodates the scheduled volume chemicals thus.
Then, will be used for making chemicals (step S303) in the substrate 10 immersion ponds 11 of IC-components.Among one embodiment, substrate 10 is immersed in the chemicals in the pond 11 like this, and promptly the bottom surface of substrate 10 is parallel with the bottom in pond 11.When substrate 10 immerses chemicals, on substrate 10, carry out the processing (step S305) that clean and etch processes etc. are used chemicals.For example; Basically with according to the identical step of the described treatment step of the step S05 among Fig. 2 in; In chemicals, substrate 10 is scrubbed or swung, perhaps be fixed in and make chemicals below substrate 10, flow under the situation in the chemicals at substrate 10.
Then, 19 pairs of substrates 10 of transducer detect (step S307), and judge whether the substrate 10 that immerses chemicals is out of shape (step S309) in pond 11.When transducer 19 detected the variant part of substrate 10, transducer 19 illustrated the detection signal of this variant part position of indication and this detection signal is sent to controller (S311).Controller 21 is sent to chemicals displacer 15 with operation signal, and the chemicals of substrate 10 belows is through chemicals displacer 15 discharge ponds 11 thus.When the chemicals of substrate 10 belows during, be applied to the substrate bottom surface under the variant part of substrate by the power that pulls of 27 expressions of the label among Fig. 1 through chemicals displacer 15 discharge ponds 11.Therefore, this direction that pulls power is opposite basically with the direction of buoyancy of being represented by the label among Fig. 1 25 and floating force, and this buoyancy and floating force are almost pulled dynamic balance or counteracting thus.Therefore, can be enough to prevent deform in substrate 10 process that chemicals is handled in using the pond.
Chemicals circulator 17 makes the chemicals of discharging from chemicals displacer 15 flow back to the pond 11, circulates by this or utilizes from the pond 11 chemicals (step S313) of discharging again.Therefore, chemicals through chemicals circulator 17 in the pond 11 outside and inner loop, the amount of the chemicals in the pond 11 keeps constant basically thus, the consumption that comes significantly to reduce chemicals by this.
The following of substrate 10 can be installed a plurality of chemicals displacers 15 in the pond 11, and operates through some chemicals displacers 15 that transducer 19 and 21 pairs of controllers only are positioned at the variant part below of substrate 10.Promptly; Each variant part that 19 pairs of transducers are submerged into the substrate 10 of chemicals detects; And only operate being positioned at being detected to some the chemicals displacers 15 below the part that will be out of shape by transducer 19 of substrate 10 through controller 21, wherein transducer 19 will comprise that the detection signal of substrate deformation position is sent to controller 21.Therefore, the chemicals under the said variant part of substrate 10 is 11 discharges from the pond, can the power that pull only be applied to each variant part of substrate 10 thus.Therefore, can be enough to prevent to be applied with on it buoyancy, floating force or its substrate each several part of making a concerted effort because of being out of shape with this buoyancy, floating force or its power that pulls in the opposite direction of making a concerted effort.
Especially, like what those skilled in the art should be appreciated that, the manufacturing processing of carrying out with immersion method more is applicable to semiconductor device than the manufacturing processing of carrying out with flow method.
According to the first embodiment of the present invention, be enough to prevent that substrate from deforming in the process of chemical treatment.Thus; Be enough to prevent to be out of shape the multiple processing defective that causes by substrate; Promote the reliability of cell processing by this, and substrate stably is transmitted into another process chamber and does not cause the substrate flase drop, promote the productivity ratio of IC-components by this through delivery unit.
Second embodiment
Fig. 4 is the structure chart according to the device of the manufacturing IC-components of second embodiment of the invention.
With reference to figure 4; Device 400 according to the manufacturing integrated circuit of second embodiment comprises pond 41, chemicals feeder 43 and chemicals displacer 45, and comprises roller 63, transmits window 65a and 65b, chemicals circulator 47, transducer 49 and controller 51.For example, the same with first embodiment, integrated circuit is included in semiconductor device of making on the semiconductor wafer and the flat panel display equipment of on glass substrate, making.
The substrate 40 of making integrated circuit is arranged in pond 41, and pond 41 accommodates chemicals.Chemicals feeder 43 supplies to chemicals in the pond 41.Different with first embodiment, substrate 40 is arranged in pond 41 in such a way, that is, at first not exclusively be immersed in the chemicals, and chemicals flows into the pond again and is immersed in the chemicals fully until substrate 40 then.Therefore, when substrate 40 is positioned at pond 41 when inner, does not have or only have small amount of chemical to be contained in the pond 41, substrate 40 is not immersed in the chemicals fully like this.After this, chemicals continuously flows in the pond that is placed with substrate, is enough to submergence substrate 40 until the amount of chemicals.
Among one embodiment, chemicals feeder 43 is positioned at the below of substrate 40, and chemicals flows on the bottom surface of substrate 40 thus, and is represented like label 53.For example, chemicals feeder 43 comprises supply pipe 43a that is positioned at the substrate below and the supply pump 43b that is connected to supply pipe 43a.Concrete, supply pipe 43a passes the bottom in pond 40 and extends to the zone under the substrate 40, flows in the pond on the lower direction of the substrate 40 of chemicals in pond 41 like this.In the present embodiment, supply pipe 43a is positioned at the periphery in pond 41, and some in the chemicals flow to central part from the periphery of substrate thus.That is, chemicals flows to the central part of the bottom surface of substrate 40 from the periphery of the bottom surface of substrate 40, promotes the efficient that flows and handle of chemicals by this.Supply pump 43b is fed into supply pipe 43a with chemicals from externalizing length of schooling developing agent storage device.Also can supply valve be mounted to supply pipe 43a and open and close chemicals feeder 43.Although above-mentioned second embodiment has disclosed the below of periphery that chemicals feeder 43 is positioned at the bottom surface of substrate 40; As long as but can make chemicals mobilely be improved and improve the treatment effeciency in the pond 41 by this can be made known any other modification of those skilled in the art to chemicals feeder 43.For example, the quantity of chemicals feeder 43 and position are not limited to shown in Figure 4, and the chemicals feeder 43 of sufficient amounts is placed in a plurality of appropriate locations that thus can be in pond 41.
Chemicals displacer 45 with chemicals be discharged to pond 41 around.Concrete, the substrate 40 in being immersed in chemicals stands to handle and when in pond 11, partly being out of shape, and the chemicals of the variant part below of substrate 40 41 is discharged from the pond through chemicals displacer 45.Therefore, chemicals displacer 45 can be positioned at substrate 40 belows substrate 40 variant part around, chemicals thus can be from below, the bottom surface of substrate 40 41 be discharged from the pond.
Among one embodiment, chemicals displacer 45 comprises discharge pipe 45a and the excavationg pump 45b that is connected to discharge pipe 45a, and said discharge pipe 45a is connected to 41 outsides, pond and extends to the below of the variant part of substrate 40.In the present embodiment, discharge pipe 45a passes the bottom in pond 41, so that chemicals is expelled to the outside in pond 41 from the zone of the variant part below of substrate 10 through discharge pipe 45a.Excavationg pump 45b can be applied to discharge pipe 45a effectively chemicals is discharged pond 41 with pressure.Also can the dump valve (not shown) be mounted to the opening and closing that discharge pipe 45a controls discharge pipe 45a.The quantity of chemicals displacer 45 does not receive restriction shown in Figure 4, and chemicals displacer 45 can be positioned at the below of each variant part of substrate 40 thus.
Therefore, comprise pond 41, chemicals feeder 43 and chemicals displacer 45, can prevent that thus substrate from deforming owing to chemicals flows on the substrate 40 according to the device of the manufacturing IC-components of second embodiment.
Hereinafter will be described the method for using device shown in Figure 4 to make IC-components in detail.In this treatment step, in the device 400 that comprises pond 41, chemicals feeder 43 and chemicals displacer 45, carry out the manufacturing of integrated circuit.
At first chemicals is fed into pond 41, does not have in this pond or small amount of chemical is only arranged, make substrate 40 to be submerged in the chemicals fully.The substrate 40 that will be used for making IC-components is put into the pond, makes that the surface of substrate 41 is parallel with the bottom in pond 41.Then, make the chemicals of q.s flow into pond 41 through chemicals feeder 43, substrate 40 fully is immersed in the chemicals in pond 41 thus.When substrate 40 is immersed in chemical reagent, in the cell processing of substrate 40 enterprising enforcements with chemicals.Particularly, because chemicals feeder 43 is positioned at the periphery place of substrate bottom surface, chemicals can flow to central part from its periphery along the substrate bottom surface.
For the Surface runoff of above-mentioned chemicals on the substrate bottom surface, substrate 40 partly is out of shape because of 25 represented buoyancy and/or the floating forces of the label among Fig. 1.Particularly, when chemicals along the substrate bottom surface when its periphery flow to central part, be applied with buoyancy, floating force around the central part of substrate 40 or it is made a concerted effort, thus, substrate 40 is because of this buoyancy and/or obviously distortion of floating force.For this reason, chemicals displacer 45 can be positioned at the below of the central part of substrate 40, and the chemicals of the center bottom surface periphery of substrate 40 is through chemicals displacer 45 discharge ponds 41.When the chemicals of below, the bottom surface, center of substrate 40 during, be applied with the represented power that pulls of label 57 among direction such as Fig. 4 on the bottom surface, center of substrate 40 through chemicals displacer 45 discharge ponds 41.Therefore, this direction that pulls force direction and this buoyancy and floating force is opposite basically, and this buoyancy and floating force are almost pulled dynamic balance or counteracting thus.Thereby, can be enough to prevent deform in the process that the chemicals of substrate 40 in using pond 41 handle.
According to a second embodiment of the present invention, the chemicals of the variant part of substrate below is discharged from the pond through the chemicals ejector, can be enough to thus prevent in the processing procedure that flow of chemicals on the substrate bottom surface, the substrate distortion takes place.
Should understand like the technical staff in present technique field; Although having disclosed substrate, the foregoing description is out of shape at central part; And the chemical reagent displacer is positioned at the below of the bottom surface, center of substrate; But the variant part of substrate can be according to treatment conditions and environment change, and the position of chemicals displacer also can change according to the deformation position of substrate.In addition; Should understand like the technical staff in present technique field; Chemicals is discharged from the pond from the below of substrate although the foregoing description has disclosed that the chemicals displacer is arranged in the below of substrate; But the chemicals displacer can be arranged in any position in pond, as long as the power that pulls is to be applied on the substrate with buoyancy, floating force and their resultant direction on the contrary.
Among one embodiment, substrate 40 is delivered in the pond 41 through the roller 63 that is installed in the pond 41.For example, roller 63 comprises upper roller 63a that contacts with the periphery of the upper surface of substrate 40 and the following roller 63b that contacts with the bottom surface of substrate 40.In the present embodiment, upper roller 63a only contacts with the periphery of the upper surface of substrate 40, and chemicals flows on the upper surface of substrate 40 easily thus.On the contrary, the bottom surface of following roller 63a spanning substrate 40, it is sagging to play roller 63b to prevent that substrate 40 from taking place thus when being conveyed into pond 41.
Periphery with upper surface substrate 40 upper roller 63a contacts this structure also can make further buoyancy, floating force or its make a concerted effort to be applied to the central part of substrate 40.Therefore; In the present embodiment,, the chemicals on the bottom surface of this upper roller structure and substrate 40 all make buoyancy and/or floating force be applied on the substrate, thus because flowing; Compare with the substrate in the device 100 among first embodiment, the buoyancy and/or the floating force that are applied to substrate 40 are bigger.Therefore, than first embodiment, be positioned at substrate 40 central part below chemicals displacer 45 should be more effective, and must can prevent to use the substrate in the processing procedure of chemicals to be out of shape.
In the present embodiment, be positioned at pond 41 owing to be used for transmitting the roller 63 of substrate 40, pond 41 also comprises the transfer path that is positioned at side-walls.Particularly, this transfer path is formed on the sidewall in pond 41, and the height of the substrate 40 that is supported by roller 63 in its height and the pond 41 is suitable basically, as shown in Figure 5 thus, and 41 the outside transfer path through this sidewall flatly transmits substrate 40 from the pond.
Fig. 5 is the part enlarged drawing of transfer path that the pond side-walls of device shown in Figure 4 is shown.
With reference to figure 5, pond 41 comprises a pair of transmission lock 41a and 41b, and substrate 40 transmits through said transmission lock, and pond 41 also comprises a pair of lock window 65a and the 65b that transmits lock 41a and 41b that be used to open and close.For example, substrate 40 transmits lock 41a through import and is conveyed into pond 41, and sends out pond 41 through outlet transmission lock 41b.When substrate 40 is conveyed into pond 41, advances lock window 65a and open lock window 65b and close.When substrate 41 is sent out pond 41, advance lock window 65a and close lock window 65b and open.Lock window 65a and 65b comprise shutter respectively.When lock window 65a and 65b opened, the chemicals in the pond 41 was through transmitting lock 41a and 41b 41 outflows from the pond.Device 400 also can be equipped with additional circulator (not shown), and the chemicals of discharging from said transmission lock thus is fed into pond 41 again, by this cyclic chemical preparation.
Among one embodiment, similar with the device 100 among Fig. 1, the device 400 of manufacturing integrated circuit shown in Figure 4 also comprises chemicals circulator 47, transducer 49 and controller 51.Chemicals circulator 17 among the structure of the chemicals circulator 47 in the present embodiment, transducer 49 and controller 51 and function and first embodiment, transducer 19 and controller 21 are basic identical, they are not done further to detail thus.
Hereinafter, with reference to figure 6 method of using device shown in Figure 4 to make IC-components is detailed.Among Fig. 6, in the device 400 that comprises pond 41, chemicals feeder 43, chemicals displacer 45, chemicals circulator 47, transducer 49 and controller 51, make the treatment step of integrated circuit.
Fig. 6 illustrates the flow chart of making the method treatment step of IC-components according to the use of embodiment of the invention device shown in Figure 4.
With reference to figure 6, open lock window 65a and 65b (step S601), and transmit substrate 40 through transmitting lock 41a and 41b.For example, the substrate of having handled transmits lock 41b through outlet sends out pond 41, and pending substrate is conveyed into pond 41 through import transmission lock 41a.That is, through transmitting the substrate 40 that lock 41a and 41b have handled with new substrate replacement.When lock window 65a and 65b open when transmitting substrate, the chemicals in the pond 41 flows out from pond 41.Circulator (not shown) through additional is sent into the chemicals that spills in the pond chemicals that circulates by this and spill again.Then, with when treatment substrate has been sent out pond 41 through roller 63, pending substrate is conveyed into (step S603) in the pond 41 through being installed in pond 41 inner rollers 63.Like this, because roller 63, substrate 40 transmits with respect to the bottom water level land in pond 41 through the transmission lock of pond 41 side-walls, and substrate 40 moves or placement in pond 41 with at the bottom of the pond abreast like this.When accomplishing the transmission of substrate, lock window 65a and 65b close once more, make also that thus the inside in pond 41 is closed.
When being conveyed into pending substrate in the pond 41 through roller 63; Because chemicals is outflow from pond 41 when lock window 65a and 65b open; Therefore perhaps do not have the chemicals of q.s in the pond 41, pending substrate is not immersed in the chemicals thus fully., chemical reagent is fed in the pond 41 for this reason, can be immersed in (step S605) in the chemicals in the pond 41 fully until substrate 40 through chemicals feeder 43.That is, substrate 40 is immersed in the chemicals in the pond 41, and the bottom surface of substrate 40 is parallel with the bottom in pond 41.
Then, when flowing around the substrate 40, on substrate 40, carry out the processing (step S607) that clean and etch processes etc. are used chemicals at chemicals.For example, substrate 40 is scrubbed and swung.
Then, 49 pairs of substrates 40 of transducer detect (step S609), and judge whether the substrate 40 that is immersed in the chemicals is out of shape (step S611) in pond 41.When transducer 49 detected the variant part of substrate 40, transducer 49 generated the detection signal of this variant part position of indication, and this detection signal is sent to controller 51.Controller 51 is sent to chemicals displacer 45 with operation signal; The chemicals of the variant part below of substrate 40 is thus through chemicals displacer 45 discharge ponds 41 (step S613). and when the chemicals below the variant part of substrate 40 passed through chemicals displacer 45 discharge ponds 41, the power that pulls of label 57 expressions among direction such as Fig. 4 was applied to the bottom surface of substrate 40 below the variant part of substrate 40.Therefore, this direction that pulls power is opposite basically with the direction of buoyancy of being represented by the label among Fig. 4 55 and floating force, and this buoyancy and floating force are almost pulled dynamic balance or counteracting thus.Therefore, can be enough to prevent deform in the process that the chemicals of substrate 40 in using pond 41 handle.
Especially, the structure of the upper roller 63a that contacts with the periphery of the upper surface of substrate 40 can make further buoyancy, floating force or its make a concerted effort to be applied to the central part of substrate 40.Therefore; In the present embodiment,, the chemicals on the bottom surface of this upper roller structure and substrate 40 all make buoyancy and/or floating force be applied on the substrate, thus because flowing; Compare with the substrate in the device 100 among first embodiment, the buoyancy and/or the floating force that are applied to substrate 40 are bigger.Therefore, than first embodiment, be positioned at substrate 40 central part below chemicals displacer 45 should be more effective, and must can prevent to use the substrate in the processing procedure of chemicals to be out of shape.
Chemicals circulator 47 makes the chemicals of discharging from chemicals displacer 45 flow back to the pond 41, circulates by this or utilizes from the pond 41 chemicals (step S615) of discharging again.Therefore, chemicals through chemicals circulator 47 in the pond 40 outside and inner loop, the amount of the chemicals in the pond 41 keeps constant basically thus, reduces the consumption of chemicals by this.
The following of substrate 40 can be installed a plurality of chemicals displacers 45 in the pond 41, and only some the chemicals displacers 45 below the variant part that is positioned at substrate 40 operated through transducer 49 and controller 51.Promptly; Each variant part that 49 pairs of transducers are submerged into the substrate 40 of chemicals detects; And only operate being positioned at being detected to some the chemicals displacers 45 below the part that will be out of shape by transducer 49 of substrate 40 through controller 51, wherein transducer 49 will comprise that the detection signal of substrate deformation position sends controller 51 to.Therefore, the chemicals below the said variant part of substrate 40 is 41 discharges from the pond, can the power that pull only be applied to each variant part of substrate 40 thus.Therefore, can be enough to prevent to be applied with on it buoyancy, floating force or its substrate each several part of making a concerted effort because of being out of shape with this buoyancy, floating force or its power that pulls in the opposite direction of making a concerted effort.
Especially, like what those skilled in the art should be appreciated that, the manufacturing processing of carrying out with flow method more is applicable to flat panel display equipment than the manufacturing processing of carrying out with immersion method.
According to embodiments of the invention, be enough to prevent that substrate from deforming in the process of chemical treatment.Thus; Be enough to prevent to be out of shape the multiple processing defective that causes by substrate; Promote the reliability of cell processing by this, and substrate stably is transmitted into another process chamber and does not cause the substrate flase drop, promote the productivity ratio of IC-components by this through delivery unit.
The description of preceding text is for illustrated embodiments but not is interpreted as limitation ot it.Although already several embodiment were made an explanation, the technical staff should understand and can make many changes and non-essence disengaging instruction and the advantage with novelty of the present invention to embodiment in the art.Therefore, all such modifications are intended to be included in of the present invention by within the appended claims institute restricted portion.In the claim, the form of device adding method is intended to cover the structure of the alleged function of execution described here, and structural equivalent and equivalent configurations mutually.Therefore, the description that should understand preceding text is the elaboration of various embodiments, but not the restriction of the specific embodiment that is disclosed, and modification and other embodiment of exposure embodiment is also intended to comprise in the scope of accompanying claims.
Claims (36)
1. one kind makes and comprises the chemicals method so that substrate is handled that flows:
Said chemicals is fed in the pond, and said substrate is arranged in said pond, and said substrate parallel is in the bottom in said pond, and said substrate is immersed in the said chemicals;
Use said chemicals on said substrate, to handle, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate is out of shape because of said buoyancy, floating force or their part of making a concerted effort; And
The chemicals of the variant part of said substrate below is discharged said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
2. method of making IC-components comprises:
Chemicals is fed in the pond;
Substrate is immersed in the said chemicals, so that said substrate is immersed in the chemicals in the said pond;
Use said chemicals on said substrate, to handle, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape; And
The chemicals of the variant part of said substrate below is discharged said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
3. method as claimed in claim 2, the direction that wherein makes progress from the upper surface of said substrate apply making a concerted effort of said buoyancy, floating force or they, and apply the said power of pulling from the prone direction of the following table of said substrate.
4. method as claimed in claim 2, wherein said substrate immerse in the said chemicals in such a way, and promptly the lower surface of said substrate is parallel with the bottom in said pond.
5. method as claimed in claim 2, the chemicals of the variant part below of wherein said substrate is discharged said pond through the bottom in said pond.
6. method as claimed in claim 2 also comprises the chemicals of discharging is fed into said pond again, comes to utilize said chemicals by this again.
7. method as claimed in claim 2, wherein said substrate comprise semiconductor wafer that is used for producing the semiconductor devices and the glass substrate that is used to make flat panel display equipment.
8. method of making IC-components comprises:
Substrate is conveyed into the pond, and in said pond, said substrate is not immersed in the chemicals fully;
Said chemicals is fed in the said pond, so that said substrate is immersed in the said chemicals;
Use said chemicals on said substrate, to handle, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape; And
The chemicals of the variant part of said substrate below is discharged said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
9. method as claimed in claim 8, wherein said substrate is conveyed in the said pond, so that the lower surface of said substrate is parallel with the bottom in said pond.
10. method as claimed in claim 9, wherein the sidewall through said pond is conveyed into said substrate in the said pond.
11. method as claimed in claim 10 wherein is conveyed into said substrate in the said pond through the roller that is installed in the said pond.
12. method as claimed in claim 11, wherein said roller comprise the upper roller that contacts with the periphery of the upper surface of said substrate, and the following roller that contacts with the lower surface of said substrate.
13. method as claimed in claim 8, wherein said chemicals are fed in the said pond in such a way, promptly said chemicals is on the lower surface that flows to said substrate below the said substrate.
14. method as claimed in claim 13, wherein the said chemicals of a part flow to central part from the periphery of said substrate.
15. method as claimed in claim 14, the variant part of wherein said substrate comprises the central part of said substrate.
16. method as claimed in claim 8, the direction that wherein makes progress from the upper surface of said substrate apply making a concerted effort of buoyancy, floating force or they, and apply the power of pulling from the prone direction of the following table of said substrate.
17. method as claimed in claim 8, the chemicals of the variant part below of wherein said substrate is discharged said pond through the bottom in said pond.
18. method as claimed in claim 8 also comprises the chemicals of discharging is fed into said pond again, comes to utilize said chemicals by this again.
19. method as claimed in claim 8, wherein said substrate comprise semiconductor wafer that is used for producing the semiconductor devices and the glass substrate that is used to make flat panel display equipment.
20. a device that is used to make IC-components comprises:
The pond; Said pond comprises chemicals and is immersed in the substrate in the said chemicals in the pond; Said substrate uses said chemicals to handle in said pond; Thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape;
Said chemicals is fed into the chemicals feeder in said pond; And
The chemicals of the variant part of said substrate below is discharged the chemicals displacer in said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
21. comprising from the zone of the variant part below of said substrate, device as claimed in claim 20, wherein said chemicals displacer extend to the outside discharge pipe in said pond, and the excavationg pump that is connected to said discharge pipe.
22. device as claimed in claim 21, wherein said discharge pipe extend to the outside in said pond through the bottom in said pond.
23. device as claimed in claim 20 also comprises the chemicals circulator that is used for the chemicals of discharging through said chemicals displacer is fed into again said pond.
24. device as claimed in claim 20 also comprises the transducer that the variant part of said substrate is detected and generates detection signal, and the controller of said chemicals displacer being controlled according to said sensor signal.
25. a device of making IC-components comprises:
The pond; Said pond comprises chemicals and is immersed in the substrate in the said chemicals in the pond; Said pond comprises that also at least one pair of is positioned at the transmission lock of sidewall; Said substrate uses said chemicals to handle in said pond, thus buoyancy, floating force or they be applied to said substrate with first direction with withing joint efforts, and said substrate because of said buoyancy, floating force or they make a concerted effort partly be out of shape;
Be used to transmit the roller of said substrate, said roller is arranged in said pond and the flat position of the transmission water seal of the sidewall in said pond, thereby the lower surface of said substrate is transmitted through said transmission lock by the bottom water level land in said roller and said pond;
Said chemicals is fed into the chemicals feeder in said pond; And
The chemicals of the variant part of said substrate below is discharged the chemicals displacer in said pond, and the power that pulls thus is applied to the variant part of said substrate with the second direction opposite with said first direction, makes the variant part of substrate flatten by this.
26. device as claimed in claim 25; The lock window that also comprises the sidewall that at least one pair of is mounted to said pond; Said at least one pair of lock window is respectively applied for and opens and closes said transmission lock respectively; Make that said substrate transmits through said transmission lock when said lock window is opened, and said lock window is closed when said substrate is handled in said pond.
27. device as claimed in claim 25, wherein said roller comprise the upper roller that contacts with the periphery of the upper surface of said substrate, and the following roller that contacts with the lower surface of said substrate.
28. like the said device of claim 27, wherein said roller down prevents by this that across the lower surface of said substrate said substrate is sagging in being conveyed into the process in said pond.
29. device as claimed in claim 25, wherein after said substrate was placed in the said pond, said chemicals feeder was fed into said chemicals in the said pond, is immersed in the said chemicals until said substrate.
30. device as claimed in claim 29, wherein said chemicals feeder comprise the supply pipe in the zone that extends to the below of substrate described in the said pond from the outside in said pond and the supply pump that is connected to said supply pipe.
31. device as claimed in claim 30, wherein said supply pipe passes the bottom in said pond.
32. device as claimed in claim 31, said chemicals feeder is installed in such a way, and promptly the part of said chemicals flow to central part from the periphery of said substrate.
33. comprising from the zone of the variant part below of said substrate, device as claimed in claim 25, wherein said chemicals displacer extend to the outside discharge pipe in said pond, and the excavationg pump that is connected to said discharge pipe.
34. device as claimed in claim 33, wherein said discharge pipe extend to the outside in said pond through the bottom in said pond.
35. device as claimed in claim 25 also comprises the chemicals circulator that is used for the chemicals of discharging through said chemicals displacer is fed into again said pond.
36. device as claimed in claim 25 also comprises the transducer that the variant part of said substrate is detected and generates detection signal, and the controller of said chemicals displacer being controlled according to said sensor signal.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080053653 | 2008-06-09 | ||
| KR1020080053653A KR100928951B1 (en) | 2008-06-09 | 2008-06-09 | Method of flowing chemical, and method and apparatus of manufacturing integrated circuit device using the same |
| KR10-2008-0053653 | 2008-06-09 |
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| Publication Number | Publication Date |
|---|---|
| CN101604620A CN101604620A (en) | 2009-12-16 |
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| CN2009101455569A Active CN101604620B (en) | 2008-06-09 | 2009-05-27 | Method for making chemical preparation flow, method and device for manufacturing ic apparatus by using the same |
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| Country | Link |
|---|---|
| JP (1) | JP5324323B2 (en) |
| KR (1) | KR100928951B1 (en) |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102122608B (en) * | 2010-12-31 | 2012-08-15 | 北京七星华创电子股份有限公司 | Chemical preparation treating system |
| CN109365382B (en) * | 2018-10-25 | 2024-03-12 | 广东西江数据科技有限公司 | Server cleaning equipment and cleaning method thereof |
| WO2021054507A1 (en) | 2019-09-19 | 2021-03-25 | 엘지전자 주식회사 | Self-assembly apparatus for semiconductor light-emitting elements |
| EP4071789A4 (en) | 2019-09-19 | 2024-02-14 | LG Electronics Inc. | Substrate chuck for self-assembly of semiconductor light-emitting diodes |
| WO2021054548A1 (en) | 2019-09-19 | 2021-03-25 | Lg Electronics Inc. | Substrate chuck for self-assembling semiconductor light-emitting diodes |
| WO2021054550A1 (en) * | 2019-09-19 | 2021-03-25 | Lg Electronics Inc. | Device for self-assembling semiconductor light-emitting diodes |
| WO2021054508A1 (en) | 2019-09-19 | 2021-03-25 | 엘지전자 주식회사 | Self-assembly apparatus for semiconductor light-emitting elements |
| KR102323256B1 (en) | 2019-09-19 | 2021-11-08 | 엘지전자 주식회사 | Self assembly device for semiconductor light emitting device |
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| TW201003754A (en) | 2010-01-16 |
| TWI401733B (en) | 2013-07-11 |
| JP5324323B2 (en) | 2013-10-23 |
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| KR100928951B1 (en) | 2009-11-30 |
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