經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（}) <產業上之利用領域> 本發明係於液晶基板製造工程過程中，用在透明導電 膜（例如藉著銦，錫氧化物而成之薄膜：以下稱爲I TO 薄膜）之蝕刻所需之蝕刻液體的管理裝置。尤指在蝕刻液 之循環使用之連續自動補給機構，酸濃度調整機構中，及 爲要抑制在隨著I TO薄膜之蝕刻工程時因溶解銦之濃縮 而引起之蝕刻性能劣化，而將蝕刻液自動排出機構也擺設 在一起之裝置。 <先存技術> 就液晶基板之I TO薄膜蝕刻工程而言，其蝕刻液體 採用塩酸與硝酸之混合水溶液，塩酸與氯化鐵之混合水溶 液，溴化氫水溶液，溴化氫與氯化鐵之混合水溶液，碘化 氫水溶液，碘化氫與氯化鐵之混合水溶液等爲主成分之水 溶液，再以噴附法或浸漬法施行之。 對於元素之方法而言，係將所定濃度濃度之一定量的 蝕刻新液注入蝕刻處理槽中才開始進行工作，依據經驗以 基板之處理片數爲指標，當蝕刻液量漸漸減少而到達所定 劣化澳度程度時，就採把與已準備好之新液一氣全部更換 之整批作業方式。該蝕刻液之更換時期係依液槽容量或基 板之種類，片數而異並無一定的週期，大約是以四天左右 更換一次之頻度來執行。 關於做爲I TO薄膜蝕刻液用之水溶液，在使用過程 中，卻與其做爲蝕刻槽之大氣封密之清淨用氮氣混在一起 本紙張尺度適用中國國家標準（CNS〉Α4規格（210X297公釐） -------/丨裝-------訂-----ί 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 B7五、發明説明（2 ) ，使水分或酸分蒸發，而引起溶液中之酸澳度上昇或下降 ，進而產生濃度變動。或者，由於蝕刻反應，將酸消耗變 成金屬塩而使酸濃度降低。因此，蝕刻性能也逐次降低， 原來對於酸濃度並未能作實時測試，而且對於所定之濃度 也未做妥善之控制。 再者，由經過蝕刻處理工作，溶解在蝕刻溶液中 ITO 薄膜（例如 In2〇3: Sn〇2 = 9 5 : 5wt% )之銦，錫則逐次被濃縮，而變成蝕刻性能劣化之一種原 因，原來對於溶解銦濃度並未能作實時測試，而且對於所 定之澳度也未做妥善之控制。 <擬解決之課題> 因此，酸澳度與溶解銦濃度則與時間之經過而改變， 並非恆定，所以由於蝕刻而形成之I TO薄膜，無法作高 精細度之尺寸的控制，使製品品質變成不穩定，I TO薄 膜之形成程也降低。 再者，在更換溶液時卻要停機，而大幅地降低工作效 率，又要增加勞務成本，這些事必須加以改進。 本發明係鑑於上述各項問題而加以硏究完成者，本發 明之目的，係一面將合於液晶基板製造工程之大量生產之 原來技術之線上搬運方式之優點加以發揮，以便將原來之 技術問題予以排除解決。 亦即，只要準備所定之原液，將蝕刻溶液自動控制在 所定之酸濃度及溶解銦濃度之範圍，且對蝕刻槽之補液工 (請先閲讀背面之注意事項再填寫本頁) 裝. 訂 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局貝工消費合作社印製 A7 _____JB7_^_五、發明説明（3 ) 作做適當的管理的話，就能夠使蝕刻功能經常保持恆定， 同時減少原液之使用耗量，大幅地縮短停機時間，進而降 低綜合的製造成本。 <解決課題之手段及作用> 本發明之蝕刻處理槽之蝕刻溶液中所溶解之銦濃度， 係如第8圖所示，由實驗即可確認與其吸光度有相當的關 係，所以依其吸光度來把溶解銦澳度加以調整及控制，再 者其蝕刻液中之酸濃度係如第5圖所示，由實驗即可確認 與其導電率之間有相當的關係，所以就依導電率來將酸濃 度加以調整及控制者。 爲要達成上述之目的，本發明之蝕刻液管理裝置，係 如第1圖所示，備有：藉由吸光光度針1 6來檢測ITO 薄膜用蝕刻液之溶解銦濃度，以便排出蝕刻液之排出手段 ，與藉由液面準位錶3來檢測蝕刻液之液面準位，以便補 給蝕刻原液和純水之第一補給手段，與藉由導電率錶1 5 來檢測蝕刻液之酸濃度，以便補給蝕刻原液或純水之第二 補給手段。 再者，本發明之蝕刻液管理裝置，其特徵係於第一補 給手段乃由如第2圖所示以事先將蝕刻原液與純水調妥之 蝕刻新液加以補給之工作，來替代蝕刻原液和純水之補給 工作。 再者，本發明之蝕刻液管理裝置，係如第3圖所示， 其特徵係備有：藉由吸光光度針1 6來檢測I TO薄膜蝕 (請先閲讀背面之注意事項再填寫本頁) •裝· -β 線 本紙張尺度適用中國國家標準（CNS ) ΑΑ規格（210><297公釐〉 2G9299 A7 _B7 五、發明説明（4 ) 刻液之溶解銦濃度，以便補給蝕刻原液和純水之第三補給 手段，與藉由導電率錶1 5來檢測蝕刻液之酸濃度，以便 補給蝕刻原液或純水之第二補給手段。 再者，本發明之蝕刻液管理裝置，係如第4圖示，其 特徵係：於補給蝕刻原液和純水之第三補給手段，以事先 將蝕刻原液和純水調妥之蝕刻新液補給工作，來替代補給 蝕刻原液和純水之工作。 至於蝕刻原液，係採用以塩酸水溶液，硝酸水溶液， 溴化氫水溶液，碘化氫水溶液等爲主要成分之單體水溶液 或混合水溶液等。 <實施例> 茲將本發明之實施例參照圖面說明如下。但是記載在 本實施例之構成機器之形狀，其相對位置等除了有特定的 限制之外，本發明之範圍並不局限在此，而只是爲了容易 說明而已。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 第1圖係爲本發明之一實施例之裝置系統圖。在圖中 之參考標號1〜1 3係表示原來之蝕刻液管理裝置之機器 構成。亦即，原來之蝕刻液管理裝置係由儲存蝕刻溶液之 蝕刻處理槽1 ，溢流槽2，液面準位錶3，蝕刻室罩4， 蝕刻液噴霧頭7，蝕刻液輸送泵8，蝕刻液中微粒過濾器 9，配置基板使基板一面蝕刻一面移動之輥輪輸送器5， 清洗基板及撹拌蝕刻液之循環泵11 ，微粒除去用過濾器 1 3，以及N2氣體，純水等之配管等所形成。 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印裝 A7 B7 五、發明説明（5 ) 依據本發明，附設在上述蝕刻處理裝置之機器，係爲 包括導電率錶1 5，吸光光度錶1 6，溶液排出泵1 8， 及蝕刻原液供給桶1 9，蝕刻原液供給用之流量調節閥 2 1 ，純水供給用流量調節閥2 2 ，與爲連接這些機器之 配管，電氣儀錶盤或空氣儀錶盤等。 儲存在蝕刻處理槽1之溶液量，係只要能供給蝕刻液 噴霧器7所需要之量即夠了，可是爲考量到工程上之穩定 起見，還是要受到控制較爲妥。關於液面準位錶3，係用 以檢測在蝕刻處理過程中附著於基板被帶出系外，而自然 減少之蝕刻液之液面準位下降情形，或用以檢測因爲蝕刻 液性能降低（劣化）而被强迫排出之液面準位下降情形， 然後管理蝕刻處理槽1之液面保持在一定的範圍。在此， 蝕刻性能劣化之溶液，則由排出泵1 8之作用流落至洩漏 用配管。再者，蝕刻性能劣化之溶液有時候也可以不必經 由洩漏用配管排出，而直接抽出系外。 關於蝕刻原液（例如溴化氫酸原液：Η B r 4 8 w t %水溶液）之蝕刻原液供給桶1 9，係由配管2 0而來之 Ν2氣體施予1〜2 kg f/cm2之加壓，再經由蝕刻 原液流量調節閥2 1送出之。再者，純水係經由既設配管 之分岐管，再經由純水流量調節閥2 2送出之。該蝕刻原 液及純水係經由各閥行自動調節後被送出，再於管路2 3 匯流後再由管路12—面與循環流液混合一面流入蝕刻處 理槽1。 再者，蝕刻原液與純水並不一定要匯流在一起，也可 (請先閲讀背面之注意事項再填寫本頁) .裝- 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8 _ A 7 B7 經濟部中央標準局員工消費合作社印製 五 發明説明 (| * ) 1 以 直 接 連 結 至 管 路 1 2 或 蝕 刻 處 理 槽 1 0 但 是 如 第 1 圖 所 1 示 9 光 將 蝕 刻 原 液 與 純 水 在 管 路 2 3 形 成 匯 流 後 9 再 連 接 1 Γ 至 循 環 路 1 2 流 入 槽 中 9 是 最 能 夠 達 成 充 分 的 混 合 狀 態 9 1 I 所 以 是 種 良 好 的 辦 法 0 請 先 閱 1 1 I 再 者 在蝕 刻 液 噴 霧 用 之 管 路 1 0 形 成 聯 機 之 導 電 率 讀 背 面 1 I 錶 1 5 與 吸 光 光 度 錶 1 6 ( 例 如 兩 鎮係 — 體 形 成 ) 9 係 白 素 1 1 管 路 1 4 引 進 試 樣 液 體 > 經 導 電 率 錶 > 吸 光 光 度 銀 連 續 檢 事 項 1 再 | 測 後 9 將 經 檢 測 完 畢 之 試 樣 液 體 白 管 路 1 7 送 回 管 路 1 0 4 % 本 1 0 頁 1 I 再 者 > 導 電 率 錶 1 5 與 吸 光 光 度 錶 1 6 也 可 以 分 開 安 1 1 I 裝 之 0 1 1 | 第 2 圚 所 示 係 本 發 明 之 其 他 實 施 例 之 裝 置 系 統 圖 0 本 1 訂 1 實 施 例 係 以 如 第 2 圖 所 示 以 液 面 準 位 錶 3 來 檢 測 蝕 刻 液 1 1 面 之 準 位 > 然 後 把 蝕 刻 原 液 與 純 水 事 先 調 妥 之 蝕 刻 新 液 補 1 1 給 工 作 9 來 替 代 用 液 面 準 位 錶 3 檢 測 蝕 刻 液 面 準 位 > 然 後 再 補 給 蝕 刻 原 液 與 純 水 之 工 作 0 2 7 係 表 示 蝕 刻 新 液 供 給 it I 桶 9 2 8 係 表 示 新 液 流 量 調 節 閥 > 至 於 其 他 部 分 之 構 成 則 1 I 與 第 1 ren _ 所 示 者 相 同 0 1 I I 第 3 圖 所 示 係 本 發 明 之 其 他 實 施 例 之 裝 置 系 統 圖 〇 本 1 1 I 實 施 例 係, 、吸 光 光 度 錶 1 6 來 檢 測 I T 0 薄 膜 蝕 刻 液 之 溶 解 1 銦 濃 度 9 然 後補 給 蝕 刻 原 液 與 純 水 者 0 如 第 3 rert 圖 所 示 9 通 1 1 常 液面 準 位 都 在 溢 流 用 堰 堤 之 位 置 附 近 9 當 補 給 蝕 刻 原 液 1 | 或 純 水 的 時 候 * 劣 化 之 蝕 刻 液 就 從 溢 流 用 堰 堤 溢 流 而 白 動 I 排 出 0 再 者 9 排 出 栗 1 8 並 不 一 定 需 要 > 也 可 以 用 閘 閥 替 1 1 1 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9 - 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明（7 ) 代之。至於其他的構成則與第1圖所示者無異。 第4圖所示係本發明之另一其他之實施例之裝置系統 圖。本實施例係於藉吸光光度錶1 6來檢測I TO薄膜蝕 刻液之溶解銦澳度後以便進行補給之第三補給手段中，如 第4圖所示，以蝕刻原液與純水事先調妥之蝕刻新液之補 給工作，來替代用蝕刻原液與純水之補給工作。至於其他 之構成則與第3圖之情形相同。 茲將第1圖所示之本實施例裝置之控制系統說明如下 Ο 關於液面準位錶3與蝕刻處理槽1之液面準位，導電 率錶15與蝕刻液之酸濃度，吸光光度錶16與蝕刻液之 溶解銦濃度三者，在本質上係各發揮其獨立機能，可是在 本發明中係以發揮互補環扣之機能作用爲特徵。 再者，在製品基板之品質管理上，必須事先將必要的 蝕刻液之酸濃度之目標値，溶解銦濃度之濃縮界限値等， 依據操作實績或計算在各控制儀器上加以設定。 茲將使用溴化氫水溶液作爲蝕刻液之實施例加以說明 如下。 通常被保持在攝氏4 5〜5 0度之蝕刻液之溴化氫溶 液澳度，由於在主成分之清滌氮氣體中也有水分一起蒸發 ，所以隨著被處理之基板片數增加，而溶液也起濃縮，於 是蝕刻液之蝕刻性能也招致劣化。 因此，溴化氫濃度必須控制在目標値，例如在 47. 5土0. 1%之界限。原來都是依經驗，根據基板 本紙張尺度適用中國國家標準（CNS〉A4規格（210X297公釐）-1〇 - *-* (請先閲讀背面之注意事項再填寫本頁)Printed by the Ministry of Economic Affairs, Central Standards Bureau employee consumer cooperative A7 B7 V. Description of the invention (}) < Utilization field in industry > The present invention is used in the manufacturing process of liquid crystal substrates, used in transparent conductive films (for example, by indium, Thin film made of tin oxide: hereinafter referred to as I TO thin film) Etching liquid management device required for etching. Especially in the continuous automatic replenishment mechanism used in the circulation of the etching solution, the acid concentration adjustment mechanism, and in order to suppress the deterioration of the etching performance caused by the concentration of dissolved indium during the etching process of the I TO film, the etching solution The automatic discharge mechanism is also arranged together. < Pre-existing technology > For the I TO thin film etching process of the liquid crystal substrate, the etching liquid adopts a mixed aqueous solution of acid and nitric acid, a mixed aqueous solution of acid and ferric chloride, an aqueous solution of hydrogen bromide, hydrogen bromide and chlorination The mixed aqueous solution of iron, the aqueous solution of hydrogen iodide, the mixed aqueous solution of hydrogen iodide and ferric chloride, etc. are the main component aqueous solutions, which are then applied by spraying or dipping. For the element method, a certain amount of a new concentration of etching solution is injected into the etching treatment tank before starting work. According to experience, the number of substrates processed is used as an indicator. When the amount of etching solution gradually decreases and reaches the specified degradation At the level of Australia, the entire batch of operation methods that replace all prepared new fluids in one go is adopted. The replacement time of the etching solution depends on the capacity of the liquid tank or the type of the substrate, and the number of pieces does not have a certain period. It is performed approximately once every four days. Regarding the aqueous solution used as I TO thin film etching solution, in the process of use, it is mixed with the clean air used as the atmospheric seal of the etching tank. This paper standard is applicable to the Chinese national standard (CNS> A4 specification (210X297 mm) ------- / 丨 installation ------- order ----- ί line (please read the notes on the back before filling out this page) A7 B7 printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (2) The evaporation of water or acid causes the acidity in the solution to rise or fall, and then the concentration changes. Or, due to the etching reaction, the acid consumption is changed into a metal salt to reduce the acid concentration. As a result, the etching performance is also gradually reduced. The acid concentration has not been tested in real time, and the specified concentration has not been properly controlled. Furthermore, the ITO film (such as In2) is dissolved in the etching solution by etching 〇3: Sn〇2 = 9 5: 5wt%) of indium, tin is concentrated one by one, and it becomes a cause of deterioration of etching performance. It turns out that the concentration of dissolved indium has not been tested in real time, and also the not Do proper control. ≪ Problems to be solved > Therefore, the acidity and dissolved indium concentration change with time, and are not constant, so the I TO film formed by etching cannot be made with high precision. The control of the product makes the quality of the product unstable, and the formation process of the I TO film is also reduced. Furthermore, when the solution is replaced, it needs to be shut down, which greatly reduces the work efficiency and increases the labor cost. These things must be improved. The invention was completed in consideration of the above problems. The purpose of the present invention is to exploit the advantages of the original technology of the online transportation method that is suitable for the mass production of the liquid crystal substrate manufacturing process in order to solve the original technical problems. Exclude the solution. That is, as long as the predetermined stock solution is prepared, the etching solution is automatically controlled within the range of the predetermined acid concentration and dissolved indium concentration, and the replenisher of the etching tank (please read the precautions on the back before filling this page). The paper size of the binding book is applicable to China National Standard (CNS) A4 (210X297mm) Beigong Consumer Printed by the cooperative A7 _____ JB7 _ ^ _ V. Invention description (3) If properly managed, the etching function can always be kept constant, at the same time, the consumption of the original liquid is reduced, the downtime is greatly shortened, and the overall manufacturing cost is reduced. ≪ Means and functions to solve the problem > The concentration of indium dissolved in the etching solution of the etching treatment tank of the present invention is shown in FIG. 8 and it can be confirmed by experiments that it has a considerable relationship with its absorbance, so it depends on The absorbance is used to adjust and control the dissolved indium oxide, and the acid concentration in the etching solution is as shown in Figure 5. It can be confirmed by experiment that there is a considerable relationship between its conductivity and conductivity. Adjust and control the acid concentration. To achieve the above purpose, the etching solution management device of the present invention, as shown in FIG. 1, is equipped with: detecting the dissolved indium concentration of the etching solution for the ITO thin film by the absorbance photometer 16 to discharge the etching solution Discharge means, the first replenishment means for detecting the liquid level of the etching liquid by the liquid level gauge 3 to replenish the etching solution and pure water, and the acid concentration of the etching liquid by the conductivity meter 15 , In order to replenish the second replenishment means of etching stock solution or pure water. Furthermore, the etching liquid management device of the present invention is characterized in that the first replenishment means replaces the etching stock solution by replacing the etching stock solution with a new etching solution prepared by adjusting the etching stock solution and pure water in advance as shown in FIG. 2 Replenishment of pure water. Furthermore, the etching liquid management device of the present invention is shown in FIG. 3, and its features are: Detecting I TO thin film etching by the absorbance photometric needle 16 (please read the precautions on the back before filling this page ) • The size of the -β line paper is applicable to the Chinese National Standard (CNS) ΑΑ specification (210 > < 297 mm> 2G9299 A7 _B7 V. Invention description (4) The concentration of dissolved indium in the engraving solution to replenish the etching stock solution and The third replenishment means for pure water and the second replenishment means for detecting the acid concentration of the etching solution by the conductivity meter 15 to replenish the etching solution or pure water. Furthermore, the etching solution management device of the present invention is as follows Figure 4 is characterized by the third replenishment means for replenishing the etching stock solution and pure water, replacing the supply of the etching stock solution and pure water with a new etching solution replenishment of the etching stock solution and pure water in advance. As for the etching stock solution, a monomer aqueous solution or a mixed aqueous solution whose main components are an aqueous acid solution of nitric acid, an aqueous solution of nitric acid, an aqueous solution of hydrogen bromide, an aqueous solution of hydrogen iodide, etc. are used. ≪ Examples > The following description is based on the drawings. However, the shape of the constituent devices described in this embodiment, the relative position, etc., are not limited to this except for specific limitations, but are only for ease of explanation. Printed by the Staff Consumer Cooperative of the Bureau of Standards (please read the precautions on the back before filling in this page) Figure 1 is the system diagram of the device according to an embodiment of the present invention. Reference numbers 1 to 13 in the figure indicate the original The machine of the etching liquid management device. That is, the original etching liquid management device consists of an etching treatment tank 1 storing an etching solution, an overflow tank 2, a liquid level gauge 3, an etching chamber cover 4, an etching liquid spray head 7 , An etching solution delivery pump 8, a particulate filter 9 in the etching solution, a roller conveyor 5 for disposing the substrate so that the substrate is etched while moving, a circulation pump 11 for cleaning the substrate and stirring the etching solution, a filter 13 for removing particles, and It is formed by piping of N2 gas, pure water, etc. This paper scale is applicable to China National Standard (CNS) A4 specification (210X297mm) Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A 7 B7 5. Description of the invention (5) According to the present invention, the equipment attached to the above-mentioned etching processing apparatus includes a conductivity meter 15, an absorbance photometer 16, a solution discharge pump 18, and an etching solution supply barrel 1 9 , Flow control valve 2 1 for etching stock solution supply, flow control valve 2 2 for pure water supply, and piping for connecting these devices, electric instrument panel or air instrument panel, etc. The amount of solution stored in the etching treatment tank 1 is As long as the amount required for the etching solution sprayer 7 is sufficient, it is still appropriate to be controlled in consideration of engineering stability. The liquid level table 3 is used to detect the etching process. Attached to the substrate is taken out of the system, and the level of the liquid level of the naturally reduced etching liquid is reduced, or used to detect the level of the liquid level that is forced to be discharged due to the degradation (deterioration) of the etching liquid, and then managed The liquid level of the etching treatment tank 1 is kept within a certain range. Here, the solution whose etching performance has deteriorated flows down to the leakage piping by the action of the discharge pump 18. Furthermore, in some cases, the solution with deteriorated etching performance may be directly drawn out of the system without being discharged through the leakage piping. For the etching stock solution (for example, hydrogen bromide stock solution: H B r 4 8 wt% aqueous solution), the etching stock solution supply barrel 19 is pressurized by 1 ~ 2 kg f / cm2 of N2 gas from the piping 20 , And then send it through the etching stock solution flow control valve 21. In addition, pure water is sent through the branch pipe of the existing piping and then through the pure water flow control valve 2 2. The etching stock solution and pure water system are automatically adjusted through each valve line, and then sent out, and then merged in the pipeline 23, and then mixed with the circulating fluid from the pipeline 12 to flow into the etching treatment tank 1. In addition, the etching solution and pure water do not necessarily need to be confluent together, (please read the precautions on the back and then fill out this page). Packing-The size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 ) -8 _ A 7 B7 Printed five invention descriptions (| *) 1 for the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (| *) 1 to be directly connected to the pipeline 1 2 or the etching treatment tank 1 0 but as shown in Figure 1 1 9 light After the etching stock solution and pure water form a confluence in the pipeline 2 3 9 then connect 1 Γ to the circulation path 1 2 into the tank 9 is the most able to achieve a sufficient mixing state 9 1 I So it is a good way 0 Please read 1 first 1 I In addition, the pipeline for the etching of the etching solution 1 0 Conductivity reading on the back surface 1 I Table 1 5 and absorbance table 16 (for example, two towns-body formation) 9 series of white pigment 1 1 pipeline 1 4 Introduce sample liquid > Conductivity meter > Silver absorbance continuous inspection items 1 Re | After testing 9 Return the white liquid pipeline of the tested sample 1 7 to the pipeline 1 0 4% This page 1 0 Page 1 I Furthermore> Conductivity table 1 5 and absorbance table 16 can also be separated An 1 1 I installed 0 1 1 | The second figure shows the device system of other embodiments of the present invention. The picture 1 of this book 1 is determined by the liquid level table 3 as shown in figure 2 The level of the etching liquid 1 1 surface> Then, the new etching liquid adjusted in advance with the original etching liquid and pure water is added 1 1 to the job 9 instead of using the liquid level table 3 to detect the level of the etching liquid> Then replenish The work of etching stock solution and pure water 0 2 7 means the supply of new etching solution to it I barrel 9 2 8 means the new liquid flow control valve> As for the composition of other parts, 1 I is the same as the one shown in 1 ren _ 0 1 II Figure 3 shows the invention The system diagram of the device according to other embodiments. This example is the 1 1 I example, and the absorbance table 16 is used to detect the dissolution of the IT 0 thin film etching solution 1 the indium concentration 9 and then to replenish the etching solution and pure water 0 as shown in Figure 3 rert Show 9 channels 1 1 The normal liquid level is near the overflow weir 9 When replenishing the etching stock solution 1 | or pure water * The degraded etching liquid overflows from the overflow weir and the white motion I discharges 0 again 9 Discharge pump 1 8 is not necessary > You can also use the gate valve instead of 1 1 1 This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -9-Employee consumption cooperation Du Yin from the Central Bureau of Standards of the Ministry of Economic Affairs System A7 B7 V. Description of invention (7) Replace it. The other components are the same as those shown in Figure 1. Fig. 4 is a system diagram of another embodiment of the present invention. This embodiment is based on the third replenishment method for detecting the dissolution of indium oxide in the I TO thin film etching solution by means of the absorbance photometer 16, as shown in Fig. 4, adjusted in advance with the etching solution and pure water The replenishment of the new etching liquid replaces the replenishment of the original etching liquid and pure water. The rest of the configuration is the same as in Figure 3. The control system of the device of this embodiment shown in FIG. 1 is described as follows. Ο About the liquid level level table 3 and the liquid level level of the etching treatment tank 1, the conductivity table 15 and the acid concentration of the etching solution, and the absorbance table The three of 16 and the dissolved indium concentration of the etching solution essentially play their independent functions, but in the present invention, they are characterized by the function of complementary buckles. In addition, in the quality control of product substrates, the target value of the acid concentration of the necessary etching solution and the concentration limit value of the dissolved indium concentration must be set on each control instrument based on the actual performance or calculation. An example of using an aqueous solution of hydrogen bromide as an etchant is described below. The hydrogen bromide solution, which is usually kept at an etching solution of 45 to 50 degrees Celsius, also evaporates together with the main component of the purified nitrogen gas, so as the number of substrates to be processed increases, the solution It also concentrates, so that the etching performance of the etching solution also deteriorates. Therefore, the concentration of hydrogen bromide must be controlled at the target value, for example, within the limit of 47.5 ± 0.1%. It turned out to be based on experience, according to the substrate. The paper standard is applicable to the Chinese national standard (CNS> A4 specification (210X297 mm) -1〇-*-* (please read the precautions on the back before filling this page)
經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（8 ) 處理片數之關係或化學分析等來判斷蝕刻液劣化之程度， 可是很難得到迅速且正確之管理。 本發明人係依實驗將蝕刻液之溴化氫濃度與導電率之 關係加以來討，如第5圖所示，發現在使用之濃度附近， 對導電率而言，能以溴化氫濃度爲主導，及以高度之直線 關係來測試導電率。 以聯機（ON LINE)方式設在管路1 0之導電率錶 1 5，爲要將測試誤差減至最小限度，特備有各補償機能 與導電率控制器2 5。而自從管路1 0所引進之試料液之 導電率測試値，係將試料液輸入導電率控制器2 5，爲要 使其測試値達到目檩値，藉著輸出信號將蝕刻原液或純水 ，利用流量調節閥2 1，2 2各施予自動控制供給，一直 到溴化氫濃度達到目標値爲止。 關於蝕刻性能之劣化乙事，除了因上述之溴化氫澳度 所引起之外，也與溶解銦濃度有關。處理基板之蝕刻液， 係藉著送液泵8自從蝕刻處理槽1取出，然後經由蝕刻液 噴霧器7噴出循環使用，所以溶解物質就在蝕刻液中漸漸 濃縮起來。而其主要溶解物質即爲銦原素，如第6圖所示 ，其濃縮程度乃與基板處理片數成比例，結果令蝕刻性能 顯著劣化。因爲原來對濃度變化並未做實時測試，而且對 於蝕刻性能亦未做一定値之管理作業。 亦即，雖然有採取基板之處理片數來做爲蝕刻液之性 能劣化之指標，可是由於基板之形狀或I TO薄膜之厚度 或蝕刻圖案並不一定，於是每一基板種類之溶解銦濃度也 本紙張尺度適用中國國家標準（CNS> A4規格（210X297公釐） -11 - (請先閲讀背面之注意事項再填寫本頁) 裝. *11 線 經濟部中央標準局員工消費合作社印装 A7 B7 五、發明説明（9 ) 各異，所以要以基板處理片數來做判定要因則難免有困難 0 本發明人由於針對蝕刻液中之銦物質之濃縮而引起之 污染狀態加以硏究，發現蝕刻液之污染程度可由銦濃度與 吸光度之關係來測試，由實驗而獲得如第7圖及第8圇所 示之結果。如第8圖所示，溶解銦之濃度與吸光度兩者並 不受溴化氫濃度之影響而呈高度的直線關係，也不受基板 處理片數之影響，而可自溶解銦濃度本身來判定蝕刻性能 界限値。再者，也認爲溶解後之銦物質，係處於溴化銦合 成物之形態，其適當的測試波長則採取；I = 3 4 2 nm。 因此，設S在管路10之導電率錶15和吸光光度錬 1 6，則不停地測試蝕刻液之溶解銦濃度，如果發現其澳 度超過劣化界限値時，則利用吸光光度控制器2 6之輸出 信號來起動排出泵1 8，自從蝕刻槽1抽出劣化之蝕刻液 排至洩漏管或直接排出系外。其結果，液面準位錶3則立 即檢測到蝕刻處理槽1之液面下降，而補給新鮮的蝕刻液 ，使溶解銦濃度被稀釋至劣化界限値，恢復其蝕刻性能後 ，停駛排出泵18之運轉。 茲將在第1圖所示實施例裝置之控制系統之機能的關 連說明如下。 當蝕刻處理槽1呈空槽時，液面準位錶3就檢測到無 蝕刻液存在，而藉著液面控制器2 4之輸出信號，令蝕刻 原液及純水以適當的流量比，由流量調節閥2 1，2 2加 以調節後送出。 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） -T9 - (請先閲讀背面之注意事項再填寫本頁) •裝 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（l〇 ) 繼之，導電率錶15就連續不停地測試蝕刻液之導電 率，藉著導電率控制器2 5之輸出信號，令蝕刻原液或純 水以適當的微少流量，經由流量調節閥2 1或2 2加以調 節送出，一直以自動控制來使溴化氫濃度達到所定之目標 値0 其次，蝕刻處理工作一旦開始的話，其溴化氫濃度之 上昇，與基板帶出時而引起之蝕刻液量減少及溶解銦之濃 度情形都會漸漸產生。 當溴化氫濃度昇髙的時候，經由導電率錶1 5連績測 試蝕刻液之導電率，並藉導電率控制器2 5之輸出信號， 令純水以適當的微量經由調節閥2 2加以調節供給，一直 以自動控制方式來使溴化氫濃度達到所定之目標値。 當因基板帶出；而引起液量減少的時候，液面準位錶 3就檢測到下降之液面，藉著準位控制器2 4之輸出信號 ，令蝕刻原液及純水以適當的流量比，經由調節閥2 1 ， 2 2加以調節供給之。 當溶解銦濃度被澳縮而到達劣化界限値時，吸光光度 錶1 6則連續不停地測試蝕刻液之溶解銦澳度，若發現超 過劣化界限値時，就藉著吸光度控制器2 6之輸出信號起 動排出泵1 8，自蝕刻處理槽1抽出劣化之蝕刻液排至洩 漏管或直接排至系外。 其結果，因爲液下降，而液面準位錶3就會檢測到下 降之液面，藉著液面控制器2 4之輸出信號，令蝕刻原液 及純水以適當的流量比，經由調節閥2 1 ，2 1加以調節 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -13 - (請先閱讀背面之注意事項再填寫本頁) -裝' -=6 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明（u) 供給之。此時蝕刻處理槽1則有新鮮的蝕刻液補充進來， 溶解銦濃度則被沖淡而達到劣化界限値而恢復蝕刻性能， 排出泵1 8則停駛運轉。 通常，溢流用之堰堤係裝設在較位於液面準位錶3之 上部之不會有溢流之位置，可是也可以讓它有若干溢流之 情形。 其次，就第3圖所示實施例裝置之控制系統之相關機 能說明如下。 當蝕刻處理槽1汲有溶液而還是空槽時，則以手動操 作方式將蝕刻原液及純水以適當的流量比，經由流量調節 閥2 1 ，2 2加以調節供給之。 繼之，導電率錶1 5則連續不停地測試蝕刻之導電率 ，藉著導電率控制器2 5之輸出信號，令蝕刻原液或純水 以適當的微少流量，經由流量調節閥21或21加以調節 供給，一直以自動控制方式來使溴化氫澳度達到所定之目 標値。 其次，蝕刻處理工作一旦開始時，就會有溴化氫濃度 上昇，因基板帶出而引起液量減少，及溶解銦濃縮等之問 題產出。 就溴化氫濃度上昇時而言，導電率錶1 5就連續不停 地測試蝕刻液之導電率，藉著導電率控制器2 5之輸出信 號，令純水以適當的微少流量，經由流量調節閥2 2加以 調節供給，一直以自動控制方式來使溴化氫濃度達到所定 之目標値。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -14 - (請先閱讀背面之注意事項再填寫本頁) .裝. 、-° 線 經濟部中央標準局員工消費合作社印裝 299299 A7 __B7_ 五、發明説明（12 ) 就基板帶出時之液置減少情形而言，液面準位錶之位 置會少微低於溢流用之堰堤位置。 當溶解銦之澳度被濃縮而到達劣化界限値時之情形而 言，吸光光度錶1 6就連續不停地測試蝕刻液之溶解銦澳 度，如果發現超過劣化界限値時，就藉著吸光度控制器 2 6之输出信號，令蝕刻原液及純水以適當的流置比，經 由流量調節閥2 1及2 2施予調節供給蝕刻處理槽。 由於獲得新鮮的蝕刻液，於溶解銦濃度被稀釋至劣化 界限値，蝕刻性能也隨之恢復。 因爲液面準位係處於溢流用堰堤之位置附近，所以當 補充蝕刻原液或純水的時候，已劣化之蝕刻液則自溢流用 堰堤溢流出去。 本發明人，係依據如上述之各控制機能所得之結果， 藉著互補關連運用，利用實驗發現能夠很容易地實現恢復 蝕刻性能，連續作業，及減少蝕刻液之使用量。 其次，爲了概念上之理解，將本發明與先存技術之操 作形態之功效比較以第9圖〜第1 2圖表示之。先存技術 之方式則如第9圖所示，在開始的時候之溴化氫濃度例如 採取4 7 . 5 w t %，其濃度則因歷時而上昇，例到逹 4 8. 7wt % (化學分析値）時就更換蝕刻液。在這種 情形下，溴化氫濃度之歷時變化則呈鋸齒狀，由於其濃度 變化呈現急降現象，所以蝕刻性能無法保持恆定。 如果採用本發明之裝置的話，則如第1 0圖所示，其 溴化氫濃度即使歷多久，例如都保持在4 7. 5±0. 1 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -15 - (請先閲讀背面之注意事項再填寫本頁) -裝· 訂 經濟部中央標隼局員工消費合作杜印製 A7 B7 五、發明説明（13) w t %之恆定値，所以不僅蝕刻性能穗定同時也沒有更換 蝕刻液之必要。 再者，先存技術之方式則如第1 1圖所示，溶解銦澳 度則與時間之經過而增加，等到該濃度到達會降低蝕刻性 能之區域値時再更換蝕刻液。此時則如第1 1圇所示，其 溶解銦澳度之歷時變化則呈鋸齒狀，溶解銦濃度之變化卻 急激下降，所以蝕刻性能無法保持恆定。 如果，採取本發明裝置的話，則如第1 2圖所示，其 溶解銦濃度經過某一段時間後便呈恆定狀態，因此不僅蝕 刻性能能夠穩定，而且也不必更換蝕刻液。 再者，在本發明係採用溴化氫水溶液做爲蝕刻液，但 是並不受限制，也可以採用塩酸與硝酸之混合水溶液，碘 化氫水溶液等爲主成分之水溶液來做爲蝕刻液。 <功效> 本發明之構成係如上述，於是具有如下之功效。 (1 )若將本發明用在液晶基板之I TO薄膜之蝕刻 工程時，能夠將蝕刻液之酸濃度及溶解銦濃度經常施予監 控在所定之目標値以內，而且也能夠在穗定之液面準位中 施行長時間之連續作業。 (2 )由於能夠將蝕刻液品質控制穩定，於是I T 0 薄膜之蝕刻性能也得穩定化，所以用於液晶基板製造工程 時，可以減少蝕刻液之耗用量，也可以減少停機時間及降 低勞務成本。 本·紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-16 _ (請先閲讀背面之注意事項再填寫本頁) -裝- ,-° 線 經濟部中央榡準局員工消費合作社印製 A7 B7 五、發明説明（14 ) <_面之簡單說明> 第1圖係本發明之一實施例之蝕刻液管理裝置之系統 圇0 第2圖係本發明之其他實施例之蝕刻液管理裝置之系 統圖。 第3圖係本發明之其他實施例之蝕刻液管理裝置之系 統圖。 第4圖係本發明之再另一其他實施例之蝕刻液管理裝 置之系統圖。 第5圖係本發明之蝕刻液之溴化氫濃度與導電率之關 係之資施例的曲線圖。 第6圖係基板I TO薄膜之蝕刻處理片數與溶解銦澳 度關係之曲線圖。 第7圖係本發明之基板I TO薄膜之蝕刻處理片數與 蝕刻液之吸光度關係之曲線圖。 第8圖係本發明之蝕刻液之溶解銦濃度與吸光度關係 之曲線圖。 第9圖係原來方式之溴化氫濃度與操作時間關係之曲 線圖。 第1 0圖係採用本發明裝置時，溴化氫濃度與操作時 間關係之曲線圖。 第1 1圖係原來方式之溶解銦濃度與操作時間關係之 曲線圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐)~~-17 - (請先閱讀背面之注意事項再填寫本頁) *裝. A7 B7 五、發明説明（15 ) 第1 2圖係採用本發明裝置時，溶解銦澳度與操作時 間關係之曲線圖。 <記號之說明> 1 :蝕刻處理槽，3 :液面準位錶，5 :輥輪輸送機 ，6 :基板，7 :噴霧器，8 :輸液泵，1 1 :循環泵， 1 5 :導電率錶，1 6 :吸光光度錶，1 8 :排出泵， 1 9 :蝕刻原液供給桶，2 1 :原液流量調節閥，2 2 : 純水流量調節閥，，2 4 :液面準位控制器，2 5 :導電 率控制器，2 6 :吸光度控制器，2 7 :蝕刻新液供給桶 ，2 8 :新液流量調節閥。 (請先閱讀背面之注意事項再填寫本頁) -裝· -一° 線 經濟部中央標準局員工消費合作杜印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-18 -Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 B7 V. Description of the invention (8) The relationship between the number of pieces or chemical analysis is used to determine the degree of deterioration of the etching solution, but it is difficult to obtain rapid and accurate management. The inventors discussed the relationship between the concentration of hydrogen bromide in the etching solution and the conductivity according to experiments. As shown in Figure 5, it was found that the concentration of hydrogen bromide can be taken as the concentration of conductivity near the concentration used. Dominate and test the conductivity with a linear relationship of height. The conductivity meter 15 is set in the pipeline 10 by ON LINE. In order to minimize the test error, each compensation function and conductivity controller 25 are specially equipped. The conductivity test value of the sample liquid introduced from the pipeline 10 is to input the sample liquid into the conductivity controller 25. In order to make the test value reach the target value, the raw solution or pure water is etched by the output signal. The flow control valves 21, 22 are used to automatically control the supply until the hydrogen bromide concentration reaches the target value. Regarding the deterioration of etching performance, in addition to the above-mentioned hydrogen bromide degree, it is also related to the concentration of dissolved indium. The etching solution for processing the substrate is taken out from the etching treatment tank 1 by the liquid feed pump 8 and then discharged through the etching solution sprayer 7 for recycling, so the dissolved substances are gradually concentrated in the etching solution. The main dissolved substance is indium element. As shown in Figure 6, the concentration is proportional to the number of substrates processed, resulting in a significant deterioration in etching performance. Because there was no real-time test on the concentration change, and there was no certain management of the etching performance. That is, although the number of processed substrates is used as an indicator of the performance deterioration of the etching solution, the shape of the substrate or the thickness of the I TO film or the etching pattern is not necessarily the same, so the concentration of dissolved indium for each substrate type is also This paper scale is applicable to the Chinese National Standard (CNS> A4 specification (210X297 mm) -11-(please read the precautions on the back before filling in this page). Packed. * 11 Printed by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative A7 B7 Fifth, the description of the invention (9) is different, so it is inevitable that there are difficulties due to the number of substrates processed. 0 The inventor investigated the pollution state caused by the concentration of indium in the etching solution and found that the etching The degree of contamination of the liquid can be tested by the relationship between the concentration of indium and the absorbance, and the results shown in Figures 7 and 8 are obtained through experiments. As shown in Figure 8, both the concentration of dissolved indium and the absorbance are not affected by bromine The influence of the hydrogen chloride concentration is highly linear, and it is not affected by the number of substrates processed. The etching performance limit can be determined from the concentration of dissolved indium itself. The dissolved indium substance is in the form of an indium bromide composition, and its appropriate test wavelength is taken; I = 3 4 2 nm. Therefore, let S be in the conductivity table 15 of the pipeline 10 and the absorbance luminous intensity 1 6 , Then the concentration of dissolved indium in the etching solution is constantly tested. If it is found that the degree of degradation exceeds the degradation limit value, the output signal of the absorbance controller 26 is used to start the discharge pump 18, and the degraded etching is extracted from the etching tank 1. The liquid is discharged to the leak tube or directly out of the system. As a result, the liquid level table 3 immediately detects that the liquid level of the etching treatment tank 1 drops, and the fresh etching liquid is replenished to dilute the dissolved indium concentration to the degradation limit. After the etching performance is restored, the operation of the discharge pump 18 is stopped. The following will explain the function of the control system of the device in the embodiment shown in Figure 1 as follows. When the etching treatment tank 1 is empty, the liquid level Table 3 detects that there is no etching liquid, and by the output signal of the liquid level controller 24, the etching raw liquid and pure water are adjusted by the flow control valves 2 1, 2 2 at an appropriate flow ratio, and then sent out. The paper standard applies to China Standard (CNS) A4 specification (210X297 mm) -T9-(Please read the notes on the back before filling in this page) • Binding A7 B7 printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of invention (l〇) Then, the conductivity meter 15 continuously tests the conductivity of the etching solution. With the output signal of the conductivity controller 25, the etching solution or pure water is flowed through the flow regulating valve 2 1 or the flow control valve 2 1 or 2 Adjust and send it out, and always use automatic control to make the concentration of hydrogen bromide reach the set target value. Secondly, once the etching process starts, the concentration of hydrogen bromide rises, and the amount of etching liquid caused when the substrate is taken out Both reduced and dissolved indium concentrations will gradually occur. When the concentration of hydrogen bromide increases, the conductivity of the etching solution is continuously tested through the conductivity table 15 and the output signal of the conductivity controller 25 is used to make the pure water pass through the control valve 2 2 in an appropriate amount. Adjust the supply and keep the concentration of hydrogen bromide in the automatic control mode to reach the set target value. When the amount of liquid is reduced due to the substrate being brought out; the liquid level gauge 3 detects the falling liquid level. With the output signal of the level controller 24, the etching stock solution and pure water are flowed at an appropriate flow rate. The ratio is adjusted and supplied via the regulating valves 2 1 and 2 2. When the concentration of dissolved indium is shrunk to reach the degradation limit value, the absorbance table 16 continuously tests the dissolved indium concentration of the etching solution. If it is found to exceed the degradation limit value, the absorbance controller 2 6 is used. The output signal activates the discharge pump 18, and the deteriorated etching liquid is extracted from the etching treatment tank 1 and discharged to the leak pipe or directly to the outside of the system. As a result, because the liquid drops, the liquid level gauge 3 will detect the falling liquid level. With the output signal of the liquid level controller 24, the etching stock solution and pure water are adjusted to the appropriate flow rate through the regulating valve. 2 1, 2 1 to be adjusted. The paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297mm) -13-(please read the precautions on the back before filling in this page) -installed '-= 6 Central Standard of the Ministry of Economic Affairs The bureau employee consumption cooperation du printed A7 B7 V. Invention description (u) It is provided. At this time, the etching treatment tank 1 is replenished with fresh etching solution, the dissolved indium concentration is diluted to reach the degradation limit value and the etching performance is restored, and the discharge pump 18 is stopped. Normally, the weir for overflow is installed at a position where there is no overflow more above the upper level of the liquid level table 3, but it can also be allowed to have some overflow. Next, the related functions of the control system of the device of the embodiment shown in Fig. 3 will be explained as follows. When the etching treatment tank 1 is filled with a solution and is still empty, the etching raw solution and pure water are adjusted and supplied through the flow adjustment valves 2 1 and 2 2 at an appropriate flow ratio in a manual operation. Next, the conductivity meter 15 continuously tests the conductivity of the etching. With the output signal of the conductivity controller 25, the etching stock solution or pure water is flowed through the flow regulating valve 21 or 21 with an appropriate little flow By adjusting the supply, automatic control has been used to make the hydrogen bromide reach the set target value. Secondly, once the etching process starts, the concentration of hydrogen bromide will increase, the amount of liquid will be reduced due to the substrate, and the concentration of dissolved indium will be produced. When the concentration of hydrogen bromide rises, the conductivity meter 15 continuously tests the conductivity of the etching solution. With the output signal of the conductivity controller 25, the pure water is flowed through the flow rate with an appropriate little flow rate. The regulating valve 22 regulates the supply, and has always controlled the hydrogen bromide concentration to the set target value in an automatic control manner. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) -14-(please read the precautions on the back and then fill out this page). Pack.,-° Line Printed by the Staff Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 299299 A7 __B7_ V. Description of the invention (12) As far as the liquid level is reduced when the substrate is brought out, the position of the liquid level gauge will be slightly lower than that of the weir for overflow. When the dissolved indium is concentrated to reach the degradation limit value, the absorbance table 16 continuously tests the dissolved indium degree of the etching solution. If it is found that the degradation limit value is exceeded, the absorbance is used. The output signal of the controller 26 causes the etching stock solution and pure water to be adjusted and supplied to the etching treatment tank through the flow control valves 21 and 22 at an appropriate flow ratio. Since a fresh etching solution is obtained, the concentration of dissolved indium is diluted to the degradation limit value, and the etching performance is restored accordingly. Because the liquid level is near the location of the overflow weir, when the etching solution or pure water is added, the degraded etching liquid overflows from the overflow weir. Based on the results obtained by the control functions as described above, the present inventors found through experiments that complementary etching can easily restore etching performance, continuous operation, and reduce the amount of etching solution used. Secondly, for conceptual understanding, the efficiency of the operation modes of the present invention and the prior art is compared as shown in Figure 9 to Figure 12. The prior art method is shown in Figure 9. At the beginning, the concentration of hydrogen bromide is 47.5 wt%, for example, and its concentration rises over time. For example, it is 4 8. 7 wt% (Chemical Analysis Value), replace the etching solution. In this case, the change in the concentration of hydrogen bromide over time is zigzag. Because the concentration change shows a sharp drop, the etching performance cannot be kept constant. If the device of the present invention is used, as shown in Figure 10, the hydrogen bromide concentration is maintained at 47.5 ± 0.1 even if it lasts for a long time, for example, the paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) -15-(Please read the precautions on the back before filling in this page)-Binding · Binding A7 B7, the consumer cooperation of the Central Standard Falcon Bureau of the Ministry of Economic Affairs. 5. Description of the invention (13) Constant wt% It is not only necessary to change the etching solution but also the etching performance. In addition, in the prior art method, as shown in Figure 11, the dissolved indium oxide increases with time, and waits until the concentration reaches the area where the etching performance will be reduced before replacing the etching solution. At this time, as shown in the first one, the time history of dissolved indium oxide is zigzag, but the change in dissolved indium concentration drops sharply, so the etching performance cannot be kept constant. If the apparatus of the present invention is adopted, as shown in Fig. 12, the concentration of dissolved indium becomes constant after a certain period of time. Therefore, not only the etching performance can be stabilized, but also the etching solution need not be replaced. Furthermore, in the present invention, an aqueous solution of hydrogen bromide is used as an etching solution, but it is not limited, and an aqueous solution containing a mixture of carboxylic acid and nitric acid, an aqueous solution of hydrogen iodide, etc. as the main component may also be used as the etching solution. < Effect > The constitution of the present invention is as described above, and thus has the following effects. (1) If the present invention is used in the etching process of the I TO film of the liquid crystal substrate, the acid concentration and the dissolved indium concentration of the etching solution can be constantly monitored within the set target value, and the liquid level of Sui Ding can also be monitored. Long-term continuous operation is performed in the level. (2) Since the quality of the etching solution can be stabilized, the etching performance of the IT 0 film must also be stabilized. Therefore, when used in the manufacturing process of liquid crystal substrates, the consumption of the etching solution can be reduced, and the downtime and labor can also be reduced. cost. This paper standard is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) -16 _ (please read the precautions on the back and then fill out this page) -install-,-° Printed A7 B7 V. Description of the invention (14) < _Simple description of the surface > Figure 1 is a system diagram of an etching solution management device according to an embodiment of the present invention. Figure 2 is a diagram of other embodiments of the present invention. Etching liquid management system diagram. Fig. 3 is a system diagram of an etching liquid management device according to another embodiment of the present invention. Fig. 4 is a system diagram of an etching liquid management device according to still another embodiment of the present invention. Fig. 5 is a graph showing an example of the relationship between the concentration of hydrogen bromide and the conductivity of the etching solution of the present invention. Figure 6 is a graph showing the relationship between the number of etched ITO thin films on the substrate and the dissolved indium oxide. Fig. 7 is a graph showing the relationship between the number of etching processes of the substrate I TO film of the present invention and the absorbance of the etching solution. Fig. 8 is a graph showing the relationship between the dissolved indium concentration and absorbance of the etching solution of the present invention. Figure 9 is a graph of the relationship between hydrogen bromide concentration and operating time in the original mode. Figure 10 is a graph of the relationship between the concentration of hydrogen bromide and the operating time when the device of the present invention is used. Figure 11 is a graph of the relationship between dissolved indium concentration and operating time in the original manner. The size of this paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) ~~ -17-(please read the precautions on the back and then fill out this page) * Package. A7 B7 5. Description of the invention (15) Article 1 2 The figure is a graph of the relationship between dissolved indium oxide and operating time when using the device of the present invention. < Description of Symbols > 1: Etching tank, 3: Liquid level gauge, 5: Roller conveyor, 6: Substrate, 7: Sprayer, 8: Infusion pump, 1 1: Circulation pump, 15: Conductivity meter, 16: Absorbance photometer, 18: Discharge pump, 19: Etching stock solution supply barrel, 2 1: Stock liquid flow regulating valve, 2 2: Pure water flow regulating valve, 2 4: Liquid level Controller, 2 5: conductivity controller, 2 6: absorbance controller, 2 7: etching new liquid supply barrel, 2 8: new liquid flow regulating valve. (Please read the precautions on the back and then fill out this page)-Installation ·-1 ° Line Printed by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperation Co., Ltd. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -18 -