CN101572284B - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting device Download PDFInfo
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- CN101572284B CN101572284B CN2008101053922A CN200810105392A CN101572284B CN 101572284 B CN101572284 B CN 101572284B CN 2008101053922 A CN2008101053922 A CN 2008101053922A CN 200810105392 A CN200810105392 A CN 200810105392A CN 101572284 B CN101572284 B CN 101572284B
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Abstract
The invention relates to a semiconductor light-emitting device belonging to the field of semiconductor photoconducting devices and comprising a light-collecting reflection cup and a semiconductor light-emitting chip on which a phosphor powder layer is covered. The semiconductor light-emitting device is characterized in that the light-collecting reflection cup does not contact with the phosphor powder layer in the light-emitting direction or the contact part of the light-collecting reflection cup and the phosphor powder layer does not exceed the height of the semiconductor light-emitting chip, thus multipath reflection between the surface of the metal light-collecting reflection cup and the phosphor powder layer is restrained, the loss generated by light reflecting on the metal light-collecting reflection cup is lowered, and furthermore, the light emitting efficiency of the semiconductor light-emitting device is improved. Compared with a regular semiconductor light-emitting device, the invention improves the light emitting efficiency by about 20 percent.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting apparatus that adopts light-emitting diode chip for backlight unit and phosphor powder layer structure, particularly relate to the higher semiconductor light-emitting apparatus of a kind of luminous efficiency.
Background technology
At present, nitride-based semiconductor can be used for making the display screen based on high-brightness blue LED, practicability products such as signal lamp.Yet the luminescent device exploitation that semiconductor light emitting chip and fluorescent material are used mainly is synthetic, the liquid crystal screen back light source that satisfies white light, and the needs of general lighting.The luminescent device of this semiconductor light emitting chip and phosphor combination, constitute by covering phosphor powder layer above the semiconductor light emitting chip of the nitride-based semiconductor multi-layer film structure of growing on the oxide substrate of light transmission or the Semiconductor substrate, the light that sends by the semiconductor light emitting chip mixes the formation white light with the light that fluorescent material is inspired.In this structure, the semiconductor light emitting chip is placed in the reflector that is concave structure, chip to around the light that sends outside cup, launch after by reflective cup reflects.
When traditional semiconductor light-emitting apparatus (as Fig. 1 b) was made, the reflectivity of metallic mirror was usually less than 100%, and the semiconductor light emitting chip is covered by phosphor powder layer and phosphor powder layer is full of speculum.Phosphor powder layer comprise fluorescent powder grain (shown in the 4a among Fig. 1 b) and glue (shown in the 4b among Fig. 1 b) since the fluorescent powder grain in the phosphor powder layer in micron dimension, much larger than optical wavelength.Light can be reflected and scattering in the communication process in phosphor powder layer.Like this, the light of mirroring of being reflected has again very when phosphor powder layer is propagated that major part is reflected back toward speculum entering, cause light repeatedly reflection to take place between speculum and phosphor powder layer (as the 30a among Fig. 1 b, shown in the 30b), major part is depleted to make light just have very in by the reflection process before outside the taking-up, so the light extraction efficiency of light-emitting device is affected.Shown in Fig. 1 b.
Summary of the invention
At the defective in the above-mentioned field, the invention provides a kind of semiconductor light-emitting apparatus, reduced the light loss of light emitting semiconductor device at the reflector interface, improved the efficient of light emitting semiconductor device.
Semiconductor light-emitting apparatus comprises the light harvesting reflector and is coated with the semiconductor light emitting chip of phosphor powder layer, it is characterized in that: the light harvesting reflector does not contact on the light exit direction with phosphor powder layer or contact portion is no more than the height of semiconductor light emitting chip.
Described light harvesting reflector is the concave surface form.
The inwall inclination angle of described concave surface is the 40-50 degree.
The reflectivity of described light harvesting reflector inwall is greater than 85%.
Described light harvesting reflector is processed by silicon substrate.
Described light harvesting reflector inwall is a metallic reflection face or by the film formed high reflection film of multilayer dielectricity.
Described metallic reflection face is to adopt the method for plating or evaporation to form.
Described metallic reflection minute surface is made by silver or aluminum metallic material.
Described phosphor powder layer is to be mixed by fluorescent material and epoxide-resin glue or silica gel.
Described fluorescent material is the yellow fluorescent powder that can encourage of the radiant light by the following wavelength of 480nm or red, green, blue colour fluorescent powder mix form.
Described fluorescent material is the oxynitrides that the radiant light by the following wavelength of 480nm can encourage
Described semiconductor light emitting chip is a nitride-based semiconductor series.
Described semiconductor light emitting chip is the led chip that contains indium gallium nitrogen luminescent layer.
The invention describes a kind of semiconductor light-emitting apparatus, promptly the light harvesting reflector in the encapsulating structure does not contact on the light exit direction with phosphor powder layer, perhaps small part contact, and the height of its contact-making surface is no more than the height of chip.By this design, suppressed the multipath reflection between metal cup surface and the fluorescent material, light reflects the loss that produces on metal cup reduces, and is improved thereby the light of whole encapsulating structure takes out efficient.
In semiconductor light-emitting apparatus no matter its encapsulating structure how, the preferred concave surface form of the shape of light harvesting reflector, light harvesting is effective, can obviously improve light extraction efficiency.The preferred 40-50 degree in concave surface inwall inclination angle is gone out with vertical direction substantially by the light of reflective cup reflects, is not easy to produce toward interflection, causes light extraction efficiency to reduce.The reflectivity of the inwall of light harvesting reflector is preferably greater than 85%, and high more good more, its light extraction efficiency also can increase.The light harvesting reflector can process concave by silicon substrate, small-sized semiconductor light-emitting apparatus generally adopts the metallic support formula, its light harvesting reflector is made with metal material, and its glass inwall generally adopts the coat of metal or the film formed high reflection films of employing multilayer dielectricity such as silver, aluminium.
Be covered on the luminescence chip after phosphor powder layer generally adopts fluorescent material and glue mixes, glue can be selected silica gel or epoxide-resin glue for use.The radiant light wavelength of excitated fluorescent powder is selected the following radiant light of 480nm for use, and its wavelength is low more, and the energy of radiant light is high more, and easier excitated fluorescent powder is luminous.Generally speaking, make white light source, adopt blue luminescence chip, associated fluorescent material then should be yellow fluorescent powder or red, green, blue mixed fluorescent powder.Fluorescent material preferred nitrogen oxygen compound class fluorescent material, excitation wavelength accommodation is wide, luminous efficiency height, and compliance with environmental protection requirements.The glue that is used in addition mixing with fluorescent material adopts epoxylite glue or silica gel usually.
Now the semiconductor light emitting chip on the market has various models, series, and corresponding to the blue-light-emitting chip of the following radiant light of 480nm, the preferred nitride-based semiconductor series of the present invention, wherein more preferably contain the led chip of indium gallium nitrogen (InGaN) luminescent layer.This family chip stable in properties, luminous efficiency is good.
Light harvesting reflector in the encapsulating structure of the present invention does not contact on the light exit direction with phosphor powder layer, perhaps small part contact, the height of its contact-making surface is no more than the height of chip, suppressed the multipath reflection between metal cup surface and the fluorescent material, light reflects the loss that produces on metal cup reduces, thereby the light taking-up efficient of semiconductor light-emitting apparatus of the present invention is improved.With the contrast experiment of the semiconductor light-emitting apparatus of routine, prove that light of the present invention takes out efficient and improved about 20%.
Description of drawings
The packaged type sectional view of Fig. 1 a tradition light-emitting device
In Fig. 1 b tradition light-emitting device, the propagation schematic diagram of light in the fluorescent material glue-line that chip sides penetrates.
Fig. 2 embodiments of the invention 1 encapsulation sectional view
Fig. 3 embodiments of the invention 2 encapsulation sectional views
The light output result contrast of Fig. 4 tradition, embodiment 1, embodiment 2 packaged types.
Each parts lists as follows among the figure:
1-semiconductor light emitting chip, the positive electrode of 2a-semiconductor light emitting chip, the positive electrode of 2b-chip fixture apparatus 7, the negative electrode of 3a-semiconductor light emitting chip, the negative electrode of 3b-chip fixture apparatus 7,4-fluorescent material glue-line, 5-are connected and fixed the plain conductor of device 7 positive electrodes and the outside positive electrode of shell, and 6-is connected and fixed the plain conductor of device 7 negative electrodes and the outside negative electrode of shell, 7-chip fixture apparatus (making by the Si sheet of evaporation insulating barrier usually), the 8-reflector, 9-shell positive electrode, 10-shell negative electrode, 11-reflector minute surface, the level height line at 12-chip top, 20-translucent resin or silica gel, 30-are mapped to outside refract light, the light that 30a-penetrates from chip sides, the light of 30b-through repeatedly reflecting, the powder particles in the 4a-phosphor powder layer, the glue in the 4b-phosphor powder layer.
Embodiment
Semiconductor light emitting chip 1 adopts light transmissive substrate (Sapphire Substrate, semiconducting nitride thing substrate or SiC substrate).2a, 3a are respectively the positive and negative electrode of chip, and positive and negative electrode 2a, the 3a of semiconductor light emitting chip 1 adopts the mode of flip-chip to dock (flip chip bonding) with positive and negative electrode 2b, the 3b of chip fixture apparatus 7.And be connected by elargol between chip fixture apparatus 7 and the reflector 8.For guaranteeing that good thermal conductivity also can adopt the mode of eutectic weldering to fix.Plain conductor 6,7 couples together the shell positive and negative electrode 9,10 on two electrode 2b, 3b of chip fixture apparatus 7 and the reflector 8 respectively, and chip positive and negative electrode 2a and 3a also are communicated with 9,10 respectively like this.The semiconductor light emitting chip is covered by phosphor powder layer 4.Phosphor powder layer 4 is to be coated on the chip after resin glue 4b and fluorescent material 4a are mixed and to solidify to form.At last, potting resin 20 sealing totals.In Fig. 2, phosphor powder layer 4 is in the coating of the center of semiconductor light emitting chip 1.Reflector surface 11 and bottom do not have phosphor powder layer 4 to cover.By transparent resin 20, be mapped to outside refract light is 30 to the light that light that semiconductor light emitting chip 1 sends and phosphor powder layer 4 send after reflector 8 reflections.Light harvesting reflector 8 does not contact on the light exit direction with phosphor powder layer 4.
During semiconductor light-emitting apparatus work, the light part that semiconductor light emitting chip 1 sends is absorbed by phosphor powder layer 4, and remaining light injects to the outside by translucent resin 20.And also injected to the outside by translucent resin 20 by the light that part of light that phosphor powder layer absorbs is converted into another wavelength.The light that injects to two kinds of outside wavelength by translucent resin mixes the mixed light that obtains mutually and is observed.Light harvesting reflector 8 to the light direction reflection, reduces light loss to the light from luminescence chip 1 side and bottom surface outgoing.
Embodiment 2
In Fig. 3, phosphor powder layer 4 covers semiconductor light emitting chip 1 and part encapsulating structure reflector surface 11.But the contact position height on fluorescent material and reflector surface 11 is no more than the level height line 12 at the chip top of semiconductor light emitting chip 1.By transparent resin 20, be mapped to outside refract light is 30 to the light that light that semiconductor light emitting chip 1 sends and phosphor powder layer 4 send after reflector 8 reflections.Light harvesting reflector 8 contacts on the light exit direction with phosphor powder layer 4, and contact portion is no more than the height of semiconductor light emitting chip.。
The contrast experiment
We adopt the chip of bridgelux MKO3131CMBC, and chip size is 31mil, and 1 watt of power, the emission wavelength of chip are at 457.5～460nm, and the chip power output is 175～200mW.Village's space utmost point ZYP550-8001 yellow fluorescent powder and the TSE4542 of GE Toshiba silica gel were mixed into the phosphor gel coating mutually and form during phosphor powder layer adopted.The ratio of fluorescent material is 12% (with the mass ratio of silica gel).Japan musashi precise glue dispensing machine ML808FX is adopted in the coating of phosphor gel, and this equipment can accurate control points glue amount and some glue time.We have carried out traditional approach encapsulation (as Fig. 1 a), embodiment 1 encapsulation (as Fig. 2), embodiment 3 encapsulation (as Fig. 3) respectively.Encapsulating structure reflector and support adopt the Taiwan one product TTI5050M of select company.
In embodiment 1, accurately control the amount of phosphor gel, make phosphor gel be covered on the chip and coated chip, but phosphor gel does not contact with the reflector minute surface.The thickness of phosphor powder layer is about 600um.
In embodiment 2, accurately control the amount of phosphor gel, phosphor gel is covered on the chip and with the reflector minute surface partly contacts.But contacting points position is chip end face horizontal line below.The phosphor powder layer thickness of chip surface also is controlled at about 600um.
In the conventional package mode is implemented, accurately control the phosphor gel amount, make phosphor gel bury chip (as shown in Figure 1a), phosphor gel partly contacts with the reflector minute surface, and making the thickness of phosphor powder layer more than chip surface is 600um.
Fig. 4 is the light output result contrast of three kinds of packaged types.The result shows, if when adopting the conventional package mode to encapsulate, the white light output valve is 1, and when then adopting embodiment 1 encapsulation, the white light output valve is 1.21; When adopting the packaged type of embodiment 2, the white light output valve is 1.15.Promptly adopt embodiment 1 and embodiment 2 encapsulation, white light output has improved 21% and 15% respectively with respect to conventional method.
Claims (11)
1. semiconductor light-emitting apparatus comprises light harvesting reflector and the semiconductor light emitting chip that is coated with phosphor powder layer, and it is characterized in that: light harvesting reflector and phosphor powder layer contact portion on the light exit direction is no more than the height of semiconductor light emitting chip.
2. semiconductor light-emitting apparatus according to claim 1 is characterized in that: described light harvesting reflector is the concave surface form.
3. semiconductor light-emitting apparatus according to claim 2 is characterized in that: the inwall inclination angle of described concave surface is the 40-50 degree.
4. semiconductor light-emitting apparatus according to claim 1 is characterized in that: the reflectivity of described light harvesting reflector inwall is greater than 85%.
5. semiconductor light-emitting apparatus according to claim 1 is characterized in that: described light harvesting reflector is processed by silicon substrate.
6. semiconductor light-emitting apparatus according to claim 1 is characterized in that: the inwall of described light harvesting reflector is a metallic reflection face or by the film formed high reflection film of multilayer dielectricity.
7. semiconductor light-emitting apparatus according to claim 6 is characterized in that: described metallic reflection face is that silver or aluminum metallic material adopt the method for plating or evaporation to form.
8. semiconductor light-emitting apparatus according to claim 1 is characterized in that: described phosphor powder layer is to be mixed by fluorescent material and epoxide-resin glue or silica gel.
9. semiconductor light-emitting apparatus according to claim 8 is characterized in that: described fluorescent material is the yellow fluorescent powder that can encourage of the radiant light by the following wavelength of 480nm or red, green, blue colour fluorescent powder mix form.
10. semiconductor light-emitting apparatus according to claim 8 is characterized in that: described fluorescent material is the oxynitrides that the radiant light by the following wavelength of 480nm can encourage.
11. according to claim 9 or 10 described semiconductor light-emitting apparatus, it is characterized in that: described semiconductor light emitting chip is a nitride-based semiconductor series, described semiconductor light emitting chip is the led chip that contains indium gallium nitrogen luminescent layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2008101053922A CN101572284B (en) | 2008-04-29 | 2008-04-29 | Semiconductor light-emitting device |
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| CN2008101053922A CN101572284B (en) | 2008-04-29 | 2008-04-29 | Semiconductor light-emitting device |
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| CN101572284A CN101572284A (en) | 2009-11-04 |
| CN101572284B true CN101572284B (en) | 2011-02-16 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102760822B (en) * | 2011-04-27 | 2015-02-04 | 展晶科技(深圳)有限公司 | Light-emitting diode encapsulation structure and manufacturing method thereof |
| CN102931323A (en) * | 2012-11-19 | 2013-02-13 | 陈广明 | LED support structure with 100-degree irradiation range |
| CN106415864B (en) * | 2014-01-29 | 2019-06-14 | 亮锐控股有限公司 | The superficial reflex device cup for phosphor-converted LED filled with sealant |
| CN115188875B (en) * | 2022-09-13 | 2023-07-04 | 泉州三安半导体科技有限公司 | Light-emitting device and light-emitting element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1340864A (en) * | 2000-09-01 | 2002-03-20 | 西铁城电子股份有限公司 | Surface assembled luminescent diode and its manufacture method |
| JP2006156604A (en) * | 2004-11-26 | 2006-06-15 | Kyocera Corp | Light emitting device and lighting system |
| CN1922741A (en) * | 2004-02-18 | 2007-02-28 | 独立行政法人物质·材料研究机构 | Light emitting device and lighting fixture |
| CN1966160A (en) * | 2005-11-15 | 2007-05-23 | 厦门华联电子有限公司 | Fluorescent glue coating process |
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2008
- 2008-04-29 CN CN2008101053922A patent/CN101572284B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1340864A (en) * | 2000-09-01 | 2002-03-20 | 西铁城电子股份有限公司 | Surface assembled luminescent diode and its manufacture method |
| CN1922741A (en) * | 2004-02-18 | 2007-02-28 | 独立行政法人物质·材料研究机构 | Light emitting device and lighting fixture |
| JP2006156604A (en) * | 2004-11-26 | 2006-06-15 | Kyocera Corp | Light emitting device and lighting system |
| CN1966160A (en) * | 2005-11-15 | 2007-05-23 | 厦门华联电子有限公司 | Fluorescent glue coating process |
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