CN101556415A - 像素结构及其制备方法 - Google Patents
像素结构及其制备方法 Download PDFInfo
- Publication number
- CN101556415A CN101556415A CNA2008101037262A CN200810103726A CN101556415A CN 101556415 A CN101556415 A CN 101556415A CN A2008101037262 A CNA2008101037262 A CN A2008101037262A CN 200810103726 A CN200810103726 A CN 200810103726A CN 101556415 A CN101556415 A CN 101556415A
- Authority
- CN
- China
- Prior art keywords
- metal film
- film
- low resistance
- electrode
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 82
- 239000002184 metal Substances 0.000 claims abstract description 82
- 239000010408 film Substances 0.000 claims description 130
- 238000005516 engineering process Methods 0.000 claims description 26
- 238000002161 passivation Methods 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 14
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 4
- 150000001398 aluminium Chemical class 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
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- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008101037262A CN101556415B (zh) | 2008-04-10 | 2008-04-10 | 像素结构及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008101037262A CN101556415B (zh) | 2008-04-10 | 2008-04-10 | 像素结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101556415A true CN101556415A (zh) | 2009-10-14 |
CN101556415B CN101556415B (zh) | 2011-05-11 |
Family
ID=41174575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101037262A Expired - Fee Related CN101556415B (zh) | 2008-04-10 | 2008-04-10 | 像素结构及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101556415B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107996002A (zh) * | 2016-12-30 | 2018-05-04 | 深圳市柔宇科技有限公司 | 阵列基板及阵列基板制造方法 |
CN110520976A (zh) * | 2019-07-16 | 2019-11-29 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101127836B1 (ko) * | 2005-06-30 | 2012-03-21 | 엘지디스플레이 주식회사 | 박막트랜지스터 기판의 제조 방법 |
KR101338106B1 (ko) * | 2006-06-30 | 2013-12-06 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
KR20080019398A (ko) * | 2006-08-28 | 2008-03-04 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
-
2008
- 2008-04-10 CN CN2008101037262A patent/CN101556415B/zh not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107996002A (zh) * | 2016-12-30 | 2018-05-04 | 深圳市柔宇科技有限公司 | 阵列基板及阵列基板制造方法 |
CN110520976A (zh) * | 2019-07-16 | 2019-11-29 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
WO2021007769A1 (zh) * | 2019-07-16 | 2021-01-21 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
US11889721B2 (en) | 2019-07-16 | 2024-01-30 | Ordos Yuansheng Optoelectronics Co., Ltd. | Display substrate, manufacturing method thereof and display device |
CN110520976B (zh) * | 2019-07-16 | 2024-02-09 | 京东方科技集团股份有限公司 | 显示基板及其制造方法、显示装置 |
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Publication number | Publication date |
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CN101556415B (zh) | 2011-05-11 |
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Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141128 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141128 |
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Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
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Effective date of registration: 20141128 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee after: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20201209 Address after: 215200 No. 1700 Zhongshan North Road, Wujiang Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee after: K-TRONICS (SUZHOU) TECHNOLOGY Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100015 No. 10, Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 |
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CF01 | Termination of patent right due to non-payment of annual fee |