CN101540268A - 用于清洗半导体晶片的方法和装置 - Google Patents
用于清洗半导体晶片的方法和装置 Download PDFInfo
- Publication number
- CN101540268A CN101540268A CN200810034826A CN200810034826A CN101540268A CN 101540268 A CN101540268 A CN 101540268A CN 200810034826 A CN200810034826 A CN 200810034826A CN 200810034826 A CN200810034826 A CN 200810034826A CN 101540268 A CN101540268 A CN 101540268A
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- Prior art keywords
- rotating disk
- cleaning solution
- semiconductor substrate
- drain outlet
- cleaning
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- 238000004140 cleaning Methods 0.000 title claims abstract description 203
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims abstract description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 43
- 239000008367 deionised water Substances 0.000 claims description 35
- 229910021641 deionized water Inorganic materials 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 20
- 238000011010 flushing procedure Methods 0.000 claims description 11
- 238000011068 loading method Methods 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- 239000002033 PVDF binder Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims description 2
- -1 polytetrafluoroethylene Polymers 0.000 claims 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- 238000012864 cross contamination Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 112
- 235000012431 wafers Nutrition 0.000 description 81
- 238000004064 recycling Methods 0.000 description 13
- 238000007599 discharging Methods 0.000 description 10
- 229910001868 water Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000002000 scavenging effect Effects 0.000 description 5
- 239000003344 environmental pollutant Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010719 annulation reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 235000019504 cigarettes Nutrition 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000012279 drainage procedure Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- 230000001052 transient effect Effects 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
转盘的外径,cm | 17 |
转盘的内径,cm | 15 |
转盘的高度,cm | 2 |
浓H2SO4的浓度 | 93%wt |
93%H2SO4在70℃时的表面张力,dyns/cm | 50.76 |
去离子水在70℃时的表面张力,dyns/cm | 64.47 |
93%H2SO44在70℃时的密度,g/cm3 | 1.98 |
93%H2O在70℃时的密度,g/cm3 | 1 |
去离子水注满转盘的时间,s | 5 |
去离子水排出转盘的时间,s | 2 |
Claims (34)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200810034826 CN101540268B (zh) | 2008-03-20 | 2008-03-20 | 用于清洗半导体晶片的方法和装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200810034826 CN101540268B (zh) | 2008-03-20 | 2008-03-20 | 用于清洗半导体晶片的方法和装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101540268A true CN101540268A (zh) | 2009-09-23 |
CN101540268B CN101540268B (zh) | 2012-12-05 |
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CN 200810034826 Active CN101540268B (zh) | 2008-03-20 | 2008-03-20 | 用于清洗半导体晶片的方法和装置 |
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102139270A (zh) * | 2010-12-23 | 2011-08-03 | 西安隆基硅材料股份有限公司 | 硅片清洗烘干器及多线切割中的断线硅片清洗烘干方法 |
WO2013040778A1 (en) * | 2011-09-22 | 2013-03-28 | Acm Research (Shanghai) Inc. | Methods and apparatus for cleaning flip chip assemblies |
CN103187402A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其形成方法、冲洗工艺的冲洗时间判定方法 |
CN106356283A (zh) * | 2015-07-17 | 2017-01-25 | 台湾积体电路制造股份有限公司 | 多周期晶圆清洁方法 |
CN106601659A (zh) * | 2016-12-30 | 2017-04-26 | 上海新阳半导体材料股份有限公司 | 新型晶圆转移装置 |
CN107971287A (zh) * | 2017-12-27 | 2018-05-01 | 重庆市江津区津星机械有限责任公司 | 一种薄壁衬套自动清洗设备 |
CN108292092A (zh) * | 2015-11-18 | 2018-07-17 | 应用材料公司 | 用于光掩模背侧清洁的设备及方法 |
CN110665894A (zh) * | 2019-11-11 | 2020-01-10 | 青田林心半导体科技有限公司 | 一种半导体生产清洗装置 |
US10892172B2 (en) | 2017-02-06 | 2021-01-12 | Planar Semiconductor, Inc. | Removal of process effluents |
CN112585722A (zh) * | 2018-08-22 | 2021-03-30 | 东京毅力科创株式会社 | 基片处理方法和基片处理装置 |
US10985039B2 (en) | 2017-02-06 | 2021-04-20 | Planar Semiconductor, Inc. | Sub-nanometer-level substrate cleaning mechanism |
US11069521B2 (en) | 2017-02-06 | 2021-07-20 | Planar Semiconductor, Inc. | Subnanometer-level light-based substrate cleaning mechanism |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040115957A1 (en) * | 2002-12-17 | 2004-06-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for enhancing wet stripping of photoresist |
JP4410119B2 (ja) * | 2005-02-03 | 2010-02-03 | 東京エレクトロン株式会社 | 洗浄装置、塗布、現像装置及び洗浄方法 |
CN100452307C (zh) * | 2005-03-21 | 2009-01-14 | 细美事有限公司 | 清洗和干燥晶片的方法 |
-
2008
- 2008-03-20 CN CN 200810034826 patent/CN101540268B/zh active Active
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102139270A (zh) * | 2010-12-23 | 2011-08-03 | 西安隆基硅材料股份有限公司 | 硅片清洗烘干器及多线切割中的断线硅片清洗烘干方法 |
CN102139270B (zh) * | 2010-12-23 | 2013-01-23 | 西安隆基硅材料股份有限公司 | 硅片清洗烘干器及多线切割中的断线硅片清洗烘干方法 |
WO2013040778A1 (en) * | 2011-09-22 | 2013-03-28 | Acm Research (Shanghai) Inc. | Methods and apparatus for cleaning flip chip assemblies |
CN103187402A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其形成方法、冲洗工艺的冲洗时间判定方法 |
CN103187402B (zh) * | 2011-12-31 | 2016-03-16 | 中芯国际集成电路制造(上海)有限公司 | 测试结构及其形成方法、冲洗工艺的冲洗时间判定方法 |
CN106356283A (zh) * | 2015-07-17 | 2017-01-25 | 台湾积体电路制造股份有限公司 | 多周期晶圆清洁方法 |
CN108292092A (zh) * | 2015-11-18 | 2018-07-17 | 应用材料公司 | 用于光掩模背侧清洁的设备及方法 |
CN108292092B (zh) * | 2015-11-18 | 2021-03-02 | 应用材料公司 | 用于光掩模背侧清洁的设备及方法 |
CN106601659A (zh) * | 2016-12-30 | 2017-04-26 | 上海新阳半导体材料股份有限公司 | 新型晶圆转移装置 |
CN106601659B (zh) * | 2016-12-30 | 2024-02-02 | 上海新阳半导体材料股份有限公司 | 新型晶圆转移装置 |
US10892172B2 (en) | 2017-02-06 | 2021-01-12 | Planar Semiconductor, Inc. | Removal of process effluents |
US10985039B2 (en) | 2017-02-06 | 2021-04-20 | Planar Semiconductor, Inc. | Sub-nanometer-level substrate cleaning mechanism |
US11069521B2 (en) | 2017-02-06 | 2021-07-20 | Planar Semiconductor, Inc. | Subnanometer-level light-based substrate cleaning mechanism |
CN107971287A (zh) * | 2017-12-27 | 2018-05-01 | 重庆市江津区津星机械有限责任公司 | 一种薄壁衬套自动清洗设备 |
CN107971287B (zh) * | 2017-12-27 | 2024-06-04 | 南京高梵电气科技有限公司 | 一种薄壁衬套自动清洗设备 |
CN112585722A (zh) * | 2018-08-22 | 2021-03-30 | 东京毅力科创株式会社 | 基片处理方法和基片处理装置 |
CN110665894A (zh) * | 2019-11-11 | 2020-01-10 | 青田林心半导体科技有限公司 | 一种半导体生产清洗装置 |
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Publication number | Publication date |
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CN101540268B (zh) | 2012-12-05 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Method and device for cleaning semiconductor chip Effective date of registration: 20140523 Granted publication date: 20121205 Pledgee: Bank of Communications Ltd Shanghai New District Branch Pledgor: ACM (SHANGHAI) Inc. Registration number: 2014310000027 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20150521 Granted publication date: 20121205 Pledgee: Bank of Communications Ltd Shanghai New District Branch Pledgor: ACM (SHANGHAI) Inc. Registration number: 2014310000027 |
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PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
CP03 | Change of name, title or address |
Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201600, room 900, 210 steaming Road, Songjiang, Shanghai Patentee before: ACM (SHANGHAI) Inc. |
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CP03 | Change of name, title or address |