CN101515588A - 具有h型栅的射频soi ldmos器件 - Google Patents
具有h型栅的射频soi ldmos器件 Download PDFInfo
- Publication number
- CN101515588A CN101515588A CNA2008100579362A CN200810057936A CN101515588A CN 101515588 A CN101515588 A CN 101515588A CN A2008100579362 A CNA2008100579362 A CN A2008100579362A CN 200810057936 A CN200810057936 A CN 200810057936A CN 101515588 A CN101515588 A CN 101515588A
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- region
- district
- ldmos device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 66
- 229920005591 polysilicon Polymers 0.000 claims abstract description 63
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 60
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000000034 method Methods 0.000 claims abstract description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000002513 implantation Methods 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 230000000873 masking effect Effects 0.000 claims abstract description 10
- 238000002347 injection Methods 0.000 claims abstract description 9
- 239000007924 injection Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 239000012212 insulator Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 241000216843 Ursus arctos horribilis Species 0.000 claims description 4
- 239000000243 solution Substances 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100579362A CN101515588B (zh) | 2008-02-21 | 2008-02-21 | 具有h型栅的射频soi ldmos器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008100579362A CN101515588B (zh) | 2008-02-21 | 2008-02-21 | 具有h型栅的射频soi ldmos器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101515588A true CN101515588A (zh) | 2009-08-26 |
CN101515588B CN101515588B (zh) | 2010-07-28 |
Family
ID=41039961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100579362A Expired - Fee Related CN101515588B (zh) | 2008-02-21 | 2008-02-21 | 具有h型栅的射频soi ldmos器件 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101515588B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101916784A (zh) * | 2010-08-13 | 2010-12-15 | 四川长虹电器股份有限公司 | Soi变埋氧层厚度器件及其制备方法 |
CN101916729A (zh) * | 2010-07-22 | 2010-12-15 | 中国科学院上海微***与信息技术研究所 | 具有多层超结结构的soi ldmos器件制作方法 |
CN102054845B (zh) * | 2009-10-28 | 2012-11-21 | 中国科学院微电子研究所 | 基于soi的射频ldmos器件及对其进行注入的方法 |
CN113410306A (zh) * | 2021-06-15 | 2021-09-17 | 西安微电子技术研究所 | 一种抗总剂量辐射加固ldmos器件结构及制备方法 |
WO2023159805A1 (zh) * | 2022-02-28 | 2023-08-31 | 长鑫存储技术有限公司 | 半导体结构版图及半导体结构 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1684358A3 (en) * | 1999-08-31 | 2008-04-23 | Matsushita Electric Industrial Co., Ltd. | High voltage SOI semiconductor device |
US6461902B1 (en) * | 2000-07-18 | 2002-10-08 | Institute Of Microelectronics | RF LDMOS on partial SOI substrate |
-
2008
- 2008-02-21 CN CN2008100579362A patent/CN101515588B/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102054845B (zh) * | 2009-10-28 | 2012-11-21 | 中国科学院微电子研究所 | 基于soi的射频ldmos器件及对其进行注入的方法 |
CN101916729A (zh) * | 2010-07-22 | 2010-12-15 | 中国科学院上海微***与信息技术研究所 | 具有多层超结结构的soi ldmos器件制作方法 |
CN101916729B (zh) * | 2010-07-22 | 2012-06-13 | 中国科学院上海微***与信息技术研究所 | 具有多层超结结构的绝缘体上硅ldmos器件制作方法 |
CN101916784A (zh) * | 2010-08-13 | 2010-12-15 | 四川长虹电器股份有限公司 | Soi变埋氧层厚度器件及其制备方法 |
CN113410306A (zh) * | 2021-06-15 | 2021-09-17 | 西安微电子技术研究所 | 一种抗总剂量辐射加固ldmos器件结构及制备方法 |
WO2023159805A1 (zh) * | 2022-02-28 | 2023-08-31 | 长鑫存储技术有限公司 | 半导体结构版图及半导体结构 |
Also Published As
Publication number | Publication date |
---|---|
CN101515588B (zh) | 2010-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101515586B (zh) | 具有紧密体接触的射频soi ldmos器件 | |
CN103035727B (zh) | Rfldmos器件及制造方法 | |
CN203205426U (zh) | 横向晶体管 | |
CN102054845B (zh) | 基于soi的射频ldmos器件及对其进行注入的方法 | |
KR100854440B1 (ko) | 반도체 집적회로 | |
US8735254B2 (en) | Manufacture method of a high voltage MOS semiconductor device | |
CN102403222B (zh) | 锗硅异质结双极晶体管的制造方法 | |
CN100524812C (zh) | 具有改进的ldmos设计的集成电路结构 | |
CN102376762B (zh) | 超级结ldmos器件及制造方法 | |
CN102254946B (zh) | 一种射频横向扩散n型mos管及其制造方法 | |
CN101515588B (zh) | 具有h型栅的射频soi ldmos器件 | |
CN103035675A (zh) | Rfldmos器件和制造方法 | |
CN104377244A (zh) | 一种降低ldmos导通电阻的器件结构 | |
CN102723353B (zh) | 高压功率ldmos器件及其制造方法 | |
CN102097479A (zh) | 一种低压埋沟vdmos器件 | |
CN103779414A (zh) | 半导体装置及半导体装置的制造方法 | |
CN104599974A (zh) | 半导体结构及其形成方法 | |
CN102800589B (zh) | 一种基于SOI的SiGe-HBT晶体管的制备方法 | |
CN104576732A (zh) | 一种寄生FinFET的横向双扩散半导体器件 | |
CN104465407A (zh) | 一种半导体器件及制备方法 | |
CN104282762A (zh) | 射频横向双扩散场效应晶体管及其制作方法 | |
CN116598361A (zh) | 一种具有超结***栅的ldmos器件 | |
CN105514040A (zh) | 集成jfet的ldmos器件及工艺方法 | |
CN102522338B (zh) | 高压超结mosfet结构及p型漂移区形成方法 | |
CN102694020B (zh) | 一种半导体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130419 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20130419 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100728 Termination date: 20190221 |