CN101508560B - Process for producing codoped In2O3 based pyroelectric material - Google Patents

Process for producing codoped In2O3 based pyroelectric material Download PDF

Info

Publication number
CN101508560B
CN101508560B CN2009101198818A CN200910119881A CN101508560B CN 101508560 B CN101508560 B CN 101508560B CN 2009101198818 A CN2009101198818 A CN 2009101198818A CN 200910119881 A CN200910119881 A CN 200910119881A CN 101508560 B CN101508560 B CN 101508560B
Authority
CN
China
Prior art keywords
temperature
sintering
in2o3
powder
zno
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009101198818A
Other languages
Chinese (zh)
Other versions
CN101508560A (en
Inventor
林元华
兰金叻
方辉
南策文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Original Assignee
Tsinghua University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to CN2009101198818A priority Critical patent/CN101508560B/en
Publication of CN101508560A publication Critical patent/CN101508560A/en
Application granted granted Critical
Publication of CN101508560B publication Critical patent/CN101508560B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

A method for preparing double-doped In2O3 based thermoelectric materials relates to oxide ceramics and the preparation thereof. The method comprises the steps as follows: powders of ZnO, GeO2 and In2O3 are weighed according to the stoichiometric ratio of In(2-2x)ZnxGexO3 (0<x<=0.20), and then the powders are mixed and calcined at the temperature of 250-700 DEG C, the phase-forming stage is completed; the calcined powder is put into a graphite mould and compacted, and then is sintered into a bulk material by the discharge plasma at the temperatureof 850-1000 DEG C, thus obtaining the double-doped In2O3 oxide thermoelectric materials of Zn and Ge. Compared with the common solid phase sintering, the invention has short reaction time and low sintering temperature and can effectively overcome the disadvantages that the reaction temperature in the prior art is high, the reaction time is long, the energy consumption is high and the compound deviates from the stoichiometric ratio, etc. Besides, the property of the sintered samples is greatly enhanced and the ZT value thereof can achieve 0.6 at the temperature of 700 DEG C.

Description

A kind of codope In<sub〉2</sub〉O<sub〉3</sub〉preparation method of base thermoelectricity material
Technical field
The invention belongs to material science, particularly oxide ceramic material and preparation method thereof is mainly concerned with a kind of codope In 2O 3The preparation method of oxide pyroelectric material.
Background technology
Thermoelectric material be a kind of can be under solid state, the material that needs movable part just heat energy and electric energy can be changed mutually hardly.For the needs of environmental protection, the research of novel thermoelectric material is subjected to people and more and more pays close attention in recent years.Thermoelectric (Thermoelectric) but material can be used as heat energy and the electric energy carrier of inverse conversion mutually, with the thermoelectric material is the thermoelectric device of nucleus module, have that structure is light, volume is little, long service life, free from environmental pollution, advantage such as can under the condition of environmental condition very severe, use, and the invertibity of thermoelectric effect has also determined thermoelectric device to have amphicheirality-can make refrigerator also can do pyrotoxin.At present, with the competition of the refrigeration modes of routine and conventional power source in, key is to improve the operating efficiency of thermoelectric cooling module or electric organ, and main path is how to improve the performance of thermoelectric material.
Thermoelectricity capability can generally use thermoelectric figure of merit (being translated into thermoelectric factor of merit or thermoelectric figure of merit again) Z to describe by the thermoelectricity capability of material:
Compare with alloy thermoelectric material commonly used, oxide pyroelectric material have resistance to oxidation, high temperature resistant, do not contain poisonous volatile unit
Z = &alpha; 2 &sigma; &kappa;
Plain characteristics are applicable to aspects such as industrial waste heat generating, automobile exhaust gas generating.The main inferior position of oxide pyroelectric material is that operating efficiency is lower at present.And In 2O 3Base oxide pyroelectric material can obtain higher elevated temperature heat electrical property by doping vario-property, therefore will be expected to become the research focus in thermoelectric field.
In 2O 3Base oxide pyroelectric material mainly is to adopt solid phase reaction synthetic, and raw material is mixed by stoichiometric proportion, and grind the calcining back, then 1300 ℃-1450 ℃ high temperature sintering 10-15 hour.
Sum up solid phase reaction synthetic method reaction temperature height, the reaction time is long, and energy consumption is big, and the In volatilization is serious under the high temperature, causes compound to depart from the chemistry ratio.
Summary of the invention
The objective of the invention is at the synthetic In of available technology adopting solid reaction process 2O 3The problems that base oxide pyroelectric material exists provide a kind of discharge plasma sintering (SPS) method low temperature that utilizes to prepare In fast 2O 3The new technology of base oxide pyroelectric material.
Technical scheme of the present invention is as follows:
A kind of codope In 2O 3The preparation method of base thermoelectricity material is characterized in that this method carries out as follows:
1) presses In 2-2xZn xGe xO 3Stoichiometric proportion, take by weighing ZnO, GeO 2And In 2O 3Powder, 0<x≤0.20 wherein;
2) with ZnO, GeO 2And In 2O 3After the powder, under 250 ℃~700 ℃ conditions, calcine, finish the one-tenth phase stage of thing phase;
3) powder after the calcining is put into graphite jig, compacting sinters block materials into discharge plasma, and sintering temperature is 850~1000 ℃, promptly obtains Zn, Ge codope In 2O 3Oxide pyroelectric material.
In the technique scheme, described step 2) calcination time in is preferably 1~6 hour; The heating rate of step 3) sintering is 100~200 ℃/min, temperature retention time 2~10 minutes.
The present invention has the following advantages and the high-lighting effect: compare with common solid-phase sintering, have the reaction time weak point, sintering temperature is low, can effectively overcome prior art reaction temperature height, and the reaction time is long, and energy consumption is big, and compound departs from shortcomings such as chemistry compares.And the properties of sample of sintering improves a lot, and its ZT value can reach 0.6 under 700 ℃.
Description of drawings
The XRD figure of product spectrum among Fig. 1: the embodiment 1.
The fracture SEM pattern of product among Fig. 2: the embodiment 1.
The XRD figure of product spectrum among Fig. 3: the embodiment 2.
The fracture SEM pattern of product among Fig. 4: the embodiment 2.
The XRD figure of product spectrum among Fig. 5: the embodiment 3.
The fracture SEM pattern of product among Fig. 6: the embodiment 3.
The XRD figure of product spectrum among Fig. 7: the embodiment 4.
The fracture SEM pattern of product among Fig. 8: the embodiment 4.
Embodiment
The preparation method of a kind of codope In2O3 base thermoelectricity material provided by the invention, its processing step is as follows:
1) at first presses In 2-2xZn xGe xO 3Stoichiometric proportion, take by weighing ZnO, GeO 2And In 2O 3Powder, 0<x≤0.20 wherein;
2) with ZnO, GeO 2And In 2O 3After the powder, under 250 ℃~700 ℃ conditions, calcine, finish the one-tenth phase stage of thing phase; Calcination time is preferably 1~6 hour.
3) powder after the calcining is put into graphite jig, compacting sinters block materials into discharge plasma, and sintering temperature is 850~1000 ℃, and the heating rate of sintering is generally 100~200 ℃/min, temperature retention time 2~10 minutes.Promptly obtain Zn, Ge codope In 2O 3Oxide pyroelectric material.
Below by several specific embodiments so that the present invention will be further described.
Embodiment 1:
According to In 1.98Zn 0.01Ge 0.01O 3Proportioning, take by weighing ZnO, GeO 2And In 2O 3, after the mixing, by burning till technology in advance, sintering is 1 hour in 250 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 850 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 100 ℃/min of heating rate is incubated 2 minutes and can obtains In 1.98Zn 0.01Ge 0.01O 3Pottery.Its feature is seen Fig. 1, and 2 show.Its ZT value can reach 0.4 under 700 ℃.
Embodiment 2:
According to In 1.90Zn 0.05Ge 0.05O 3Proportioning, take by weighing ZnO, GeO 2And In 2O 3, after the mixing, by burning till technology in advance, sintering is 3 hours in 400 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 900 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 130 ℃/min of heating rate is incubated 4 minutes and can obtains In 1.94Zn 0.03Ge 0.03O 3Pottery.Its feature is seen Fig. 3, and 4 show.Its ZT value can reach 0.6 under 700 ℃.
Embodiment 3:
According to In 1.70Zn 0.15Ge 0.15O 3Proportioning, take by weighing ZnO, GeO 2And In 2O 3, after the mixing, by burning till technology in advance, sintering is 5 hours in 600 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 950 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 160 ℃/min of heating rate is incubated 7 minutes and can obtains In 1.70Zn 0.15Ge 0.15O 3Pottery.Its feature is seen Fig. 5, Fig. 6.Its ZT value can reach 0.4 under 700 ℃.
Embodiment 4:
According to In 1.60Zn 0.2Ge 0.2O 3Proportioning, take by weighing ZnO, GeO 2And In 2O 3, after the mixing, by burning till technology in advance, sintering is 6 hours in 700 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 1000 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 200 ℃/min of heating rate is incubated 10 minutes and can obtains In 1.60Zn 0.2Ge 0.2O 3Pottery.Its feature is seen Fig. 7, Fig. 8.Its ZT value can reach 0.2 under 700 ℃.

Claims (1)

1. codope In 2O 3The preparation method of base thermoelectricity material is characterized in that this method carries out as follows:
1) presses In 2-2xZn xGe xO 3Stoichiometric proportion, take by weighing ZnO, GeO 2And In 2O 3Powder, 0<x≤0.20 wherein;
2) with ZnO, GeO 2And In 2O 3After the powder, calcine under 250 ℃~700 ℃ conditions, calcination time is 1~6 hour, finishes the one-tenth phase stage of thing phase;
3) powder after the calcining is put into graphite jig, compacting sinters block materials into discharge plasma, and sintering temperature is 850~1000 ℃, and the heating rate of sintering is 100~200 ℃/min, and temperature retention time 2~10 minutes promptly obtains Zn and Ge codope In 2O 3Oxide pyroelectric material.
CN2009101198818A 2009-03-20 2009-03-20 Process for producing codoped In2O3 based pyroelectric material Expired - Fee Related CN101508560B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009101198818A CN101508560B (en) 2009-03-20 2009-03-20 Process for producing codoped In2O3 based pyroelectric material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009101198818A CN101508560B (en) 2009-03-20 2009-03-20 Process for producing codoped In2O3 based pyroelectric material

Publications (2)

Publication Number Publication Date
CN101508560A CN101508560A (en) 2009-08-19
CN101508560B true CN101508560B (en) 2011-07-20

Family

ID=41001118

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101198818A Expired - Fee Related CN101508560B (en) 2009-03-20 2009-03-20 Process for producing codoped In2O3 based pyroelectric material

Country Status (1)

Country Link
CN (1) CN101508560B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102887698B (en) * 2011-07-22 2014-09-17 清华大学 Indium oxide based ceramic composite thermoelectric material and preparation method thereof
CN102603270A (en) * 2011-12-20 2012-07-25 中国航空工业集团公司北京航空材料研究院 Method for preparing rare-earth element double-doped nanocrystalline In2O3 based thermoelectric ceramic material
CN103909262B (en) * 2013-06-07 2015-03-04 武汉理工大学 High-performance Cu2SnSe3 thermoelectric material and rapid preparing method thereof
CN103715349B (en) * 2013-12-30 2016-05-11 北京科技大学 A kind of preparation method of Ni doping ZnO texture thermoelectric material
CN105355770B (en) * 2015-10-13 2018-02-16 北京科技大学 A kind of preparation method of C and Al codopes ZnO thermoelectric materials
CN107994115B (en) * 2017-12-11 2021-05-18 武汉科技大学 Pb/Ba double-doped BiCuSeO thermoelectric material and preparation method thereof
CN109378381A (en) * 2018-10-19 2019-02-22 包头稀土研究院 High temperature thermoelectric unit and its manufacturing method
CN109659426B (en) * 2018-12-14 2020-12-22 昆明理工大学 Thermal-function ceramic material with superlattice structure and preparation method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1943052A (en) * 2004-04-14 2007-04-04 纳幕尔杜邦公司 High performance thermoelectric materials and their method of preparation
CN1974079A (en) * 2006-12-08 2007-06-06 中国科学院宁波材料技术与工程研究所 Process of preparing bismuth telluride-base thermoelectric material
CN101304829A (en) * 2005-11-10 2008-11-12 住友金属矿山株式会社 Indium nanowire, oxide nanowire, conductive oxide nanowire and manufacturing methods thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1943052A (en) * 2004-04-14 2007-04-04 纳幕尔杜邦公司 High performance thermoelectric materials and their method of preparation
CN101304829A (en) * 2005-11-10 2008-11-12 住友金属矿山株式会社 Indium nanowire, oxide nanowire, conductive oxide nanowire and manufacturing methods thereof
CN1974079A (en) * 2006-12-08 2007-06-06 中国科学院宁波材料技术与工程研究所 Process of preparing bismuth telluride-base thermoelectric material

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2002-118300A 2002.04.19

Also Published As

Publication number Publication date
CN101508560A (en) 2009-08-19

Similar Documents

Publication Publication Date Title
CN101508560B (en) Process for producing codoped In2O3 based pyroelectric material
CN104261357B (en) A kind of Bi2O2Se base thermoelectricity material and preparation method thereof
CN102633505A (en) Method for preparing high-purity MAX-phase ceramic powder
CN101913869B (en) Oxide thermoelectric material capable of being sintered at low temperature and preparation method thereof
CN103641484A (en) Method for preparing Si3N4/SiC composite ceramic powder from biomass power plant ash
CN108950278A (en) A kind of method that microwave heating prepares BiCuSeO thermoelectric block body material
CN111470859A (en) Hexahydric spinel type iron-cobalt-chromium-manganese-magnesium-zinc series high-entropy oxide and powder preparation method thereof
CN109627002A (en) A kind of new method quickly preparing antimony Mg base thermoelectricity material
CN108588838A (en) A method of preparing the SnSe polycrystalline bulks with high thermoelectricity capability
CN110078476A (en) A kind of Al doping BiCuSeO base thermoelectricity material and preparation method thereof
CN103436724B (en) Method for quickly preparing high-performance PbS(1-x)Sex based thermoelectric material
CN100363132C (en) High pressure method for preparing Bi-Te alloy series thermoelectric material
CN106045482A (en) Preparation method of rare earth oxide doped alumina-based high-performance metal melt hydrogen determination probe material
CN101338386B (en) Method for preparing TiNi Sn based thermoelectric compounds
CN104402063A (en) Rapid preparation method of high performance CuFeS2 thermoelectric material
CN104404284B (en) Method for rapid preparation of high performance AgBiSe2 block thermoelectric material
CN104004935A (en) Method for super-rapidly preparing high-performance high-silicon-manganese thermoelectric material
CN107793155B (en) Ultra-fast preparation of Cu2Method for Se bulk thermoelectric material
Iyasara et al. La and Sm co-doped SrTiO3-δ thermoelectric ceramics
CN108546108B (en) Bi2O2Se-based thermoelectric material, preparation method thereof and thermoelectric device
CN101905972A (en) Aluminum-doped zinc oxide-based thermoelectric material and preparation method thereof
CN109087987B (en) α -MgAgSb based nano composite thermoelectric material and preparation method thereof
CN106006738A (en) Ni-doped CuCrO2-based oxide thermoelectric material and preparation method thereof
CN103626495B (en) Preparation method for CIGS target material through pressureless sintering
CN103924109B (en) The supper-fast preparation high-performance CoSb of a kind of Self-propagating Sintering Synthetic 3the method of base thermoelectricity material

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110720

Termination date: 20120320