CN101508560B - Process for producing codoped In2O3 based pyroelectric material - Google Patents
Process for producing codoped In2O3 based pyroelectric material Download PDFInfo
- Publication number
- CN101508560B CN101508560B CN2009101198818A CN200910119881A CN101508560B CN 101508560 B CN101508560 B CN 101508560B CN 2009101198818 A CN2009101198818 A CN 2009101198818A CN 200910119881 A CN200910119881 A CN 200910119881A CN 101508560 B CN101508560 B CN 101508560B
- Authority
- CN
- China
- Prior art keywords
- temperature
- sintering
- in2o3
- powder
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A method for preparing double-doped In2O3 based thermoelectric materials relates to oxide ceramics and the preparation thereof. The method comprises the steps as follows: powders of ZnO, GeO2 and In2O3 are weighed according to the stoichiometric ratio of In(2-2x)ZnxGexO3 (0<x<=0.20), and then the powders are mixed and calcined at the temperature of 250-700 DEG C, the phase-forming stage is completed; the calcined powder is put into a graphite mould and compacted, and then is sintered into a bulk material by the discharge plasma at the temperatureof 850-1000 DEG C, thus obtaining the double-doped In2O3 oxide thermoelectric materials of Zn and Ge. Compared with the common solid phase sintering, the invention has short reaction time and low sintering temperature and can effectively overcome the disadvantages that the reaction temperature in the prior art is high, the reaction time is long, the energy consumption is high and the compound deviates from the stoichiometric ratio, etc. Besides, the property of the sintered samples is greatly enhanced and the ZT value thereof can achieve 0.6 at the temperature of 700 DEG C.
Description
Technical field
The invention belongs to material science, particularly oxide ceramic material and preparation method thereof is mainly concerned with a kind of codope In
2O
3The preparation method of oxide pyroelectric material.
Background technology
Thermoelectric material be a kind of can be under solid state, the material that needs movable part just heat energy and electric energy can be changed mutually hardly.For the needs of environmental protection, the research of novel thermoelectric material is subjected to people and more and more pays close attention in recent years.Thermoelectric (Thermoelectric) but material can be used as heat energy and the electric energy carrier of inverse conversion mutually, with the thermoelectric material is the thermoelectric device of nucleus module, have that structure is light, volume is little, long service life, free from environmental pollution, advantage such as can under the condition of environmental condition very severe, use, and the invertibity of thermoelectric effect has also determined thermoelectric device to have amphicheirality-can make refrigerator also can do pyrotoxin.At present, with the competition of the refrigeration modes of routine and conventional power source in, key is to improve the operating efficiency of thermoelectric cooling module or electric organ, and main path is how to improve the performance of thermoelectric material.
Thermoelectricity capability can generally use thermoelectric figure of merit (being translated into thermoelectric factor of merit or thermoelectric figure of merit again) Z to describe by the thermoelectricity capability of material:
Compare with alloy thermoelectric material commonly used, oxide pyroelectric material have resistance to oxidation, high temperature resistant, do not contain poisonous volatile unit
Plain characteristics are applicable to aspects such as industrial waste heat generating, automobile exhaust gas generating.The main inferior position of oxide pyroelectric material is that operating efficiency is lower at present.And In
2O
3Base oxide pyroelectric material can obtain higher elevated temperature heat electrical property by doping vario-property, therefore will be expected to become the research focus in thermoelectric field.
In
2O
3Base oxide pyroelectric material mainly is to adopt solid phase reaction synthetic, and raw material is mixed by stoichiometric proportion, and grind the calcining back, then 1300 ℃-1450 ℃ high temperature sintering 10-15 hour.
Sum up solid phase reaction synthetic method reaction temperature height, the reaction time is long, and energy consumption is big, and the In volatilization is serious under the high temperature, causes compound to depart from the chemistry ratio.
Summary of the invention
The objective of the invention is at the synthetic In of available technology adopting solid reaction process
2O
3The problems that base oxide pyroelectric material exists provide a kind of discharge plasma sintering (SPS) method low temperature that utilizes to prepare In fast
2O
3The new technology of base oxide pyroelectric material.
Technical scheme of the present invention is as follows:
A kind of codope In
2O
3The preparation method of base thermoelectricity material is characterized in that this method carries out as follows:
1) presses In
2-2xZn
xGe
xO
3Stoichiometric proportion, take by weighing ZnO, GeO
2And In
2O
3Powder, 0<x≤0.20 wherein;
2) with ZnO, GeO
2And In
2O
3After the powder, under 250 ℃~700 ℃ conditions, calcine, finish the one-tenth phase stage of thing phase;
3) powder after the calcining is put into graphite jig, compacting sinters block materials into discharge plasma, and sintering temperature is 850~1000 ℃, promptly obtains Zn, Ge codope In
2O
3Oxide pyroelectric material.
In the technique scheme, described step 2) calcination time in is preferably 1~6 hour; The heating rate of step 3) sintering is 100~200 ℃/min, temperature retention time 2~10 minutes.
The present invention has the following advantages and the high-lighting effect: compare with common solid-phase sintering, have the reaction time weak point, sintering temperature is low, can effectively overcome prior art reaction temperature height, and the reaction time is long, and energy consumption is big, and compound departs from shortcomings such as chemistry compares.And the properties of sample of sintering improves a lot, and its ZT value can reach 0.6 under 700 ℃.
Description of drawings
The XRD figure of product spectrum among Fig. 1: the embodiment 1.
The fracture SEM pattern of product among Fig. 2: the embodiment 1.
The XRD figure of product spectrum among Fig. 3: the embodiment 2.
The fracture SEM pattern of product among Fig. 4: the embodiment 2.
The XRD figure of product spectrum among Fig. 5: the embodiment 3.
The fracture SEM pattern of product among Fig. 6: the embodiment 3.
The XRD figure of product spectrum among Fig. 7: the embodiment 4.
The fracture SEM pattern of product among Fig. 8: the embodiment 4.
Embodiment
The preparation method of a kind of codope In2O3 base thermoelectricity material provided by the invention, its processing step is as follows:
1) at first presses In
2-2xZn
xGe
xO
3Stoichiometric proportion, take by weighing ZnO, GeO
2And In
2O
3Powder, 0<x≤0.20 wherein;
2) with ZnO, GeO
2And In
2O
3After the powder, under 250 ℃~700 ℃ conditions, calcine, finish the one-tenth phase stage of thing phase; Calcination time is preferably 1~6 hour.
3) powder after the calcining is put into graphite jig, compacting sinters block materials into discharge plasma, and sintering temperature is 850~1000 ℃, and the heating rate of sintering is generally 100~200 ℃/min, temperature retention time 2~10 minutes.Promptly obtain Zn, Ge codope In
2O
3Oxide pyroelectric material.
Below by several specific embodiments so that the present invention will be further described.
Embodiment 1:
According to In
1.98Zn
0.01Ge
0.01O
3Proportioning, take by weighing ZnO, GeO
2And In
2O
3, after the mixing, by burning till technology in advance, sintering is 1 hour in 250 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 850 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 100 ℃/min of heating rate is incubated 2 minutes and can obtains In
1.98Zn
0.01Ge
0.01O
3Pottery.Its feature is seen Fig. 1, and 2 show.Its ZT value can reach 0.4 under 700 ℃.
Embodiment 2:
According to In
1.90Zn
0.05Ge
0.05O
3Proportioning, take by weighing ZnO, GeO
2And In
2O
3, after the mixing, by burning till technology in advance, sintering is 3 hours in 400 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 900 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 130 ℃/min of heating rate is incubated 4 minutes and can obtains In
1.94Zn
0.03Ge
0.03O
3Pottery.Its feature is seen Fig. 3, and 4 show.Its ZT value can reach 0.6 under 700 ℃.
Embodiment 3:
According to In
1.70Zn
0.15Ge
0.15O
3Proportioning, take by weighing ZnO, GeO
2And In
2O
3, after the mixing, by burning till technology in advance, sintering is 5 hours in 600 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 950 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 160 ℃/min of heating rate is incubated 7 minutes and can obtains In
1.70Zn
0.15Ge
0.15O
3Pottery.Its feature is seen Fig. 5, Fig. 6.Its ZT value can reach 0.4 under 700 ℃.
Embodiment 4:
According to In
1.60Zn
0.2Ge
0.2O
3Proportioning, take by weighing ZnO, GeO
2And In
2O
3, after the mixing, by burning till technology in advance, sintering is 6 hours in 700 ℃ of air, finishes the one-tenth phase stage of material thing phase.Mixing, granulation then, and under 1000 ℃ of conditions, utilize SPS discharge plasma sintering furnace sintering, 200 ℃/min of heating rate is incubated 10 minutes and can obtains In
1.60Zn
0.2Ge
0.2O
3Pottery.Its feature is seen Fig. 7, Fig. 8.Its ZT value can reach 0.2 under 700 ℃.
Claims (1)
1. codope In
2O
3The preparation method of base thermoelectricity material is characterized in that this method carries out as follows:
1) presses In
2-2xZn
xGe
xO
3Stoichiometric proportion, take by weighing ZnO, GeO
2And In
2O
3Powder, 0<x≤0.20 wherein;
2) with ZnO, GeO
2And In
2O
3After the powder, calcine under 250 ℃~700 ℃ conditions, calcination time is 1~6 hour, finishes the one-tenth phase stage of thing phase;
3) powder after the calcining is put into graphite jig, compacting sinters block materials into discharge plasma, and sintering temperature is 850~1000 ℃, and the heating rate of sintering is 100~200 ℃/min, and temperature retention time 2~10 minutes promptly obtains Zn and Ge codope In
2O
3Oxide pyroelectric material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101198818A CN101508560B (en) | 2009-03-20 | 2009-03-20 | Process for producing codoped In2O3 based pyroelectric material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101198818A CN101508560B (en) | 2009-03-20 | 2009-03-20 | Process for producing codoped In2O3 based pyroelectric material |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101508560A CN101508560A (en) | 2009-08-19 |
CN101508560B true CN101508560B (en) | 2011-07-20 |
Family
ID=41001118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101198818A Expired - Fee Related CN101508560B (en) | 2009-03-20 | 2009-03-20 | Process for producing codoped In2O3 based pyroelectric material |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101508560B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102887698B (en) * | 2011-07-22 | 2014-09-17 | 清华大学 | Indium oxide based ceramic composite thermoelectric material and preparation method thereof |
CN102603270A (en) * | 2011-12-20 | 2012-07-25 | 中国航空工业集团公司北京航空材料研究院 | Method for preparing rare-earth element double-doped nanocrystalline In2O3 based thermoelectric ceramic material |
CN103909262B (en) * | 2013-06-07 | 2015-03-04 | 武汉理工大学 | High-performance Cu2SnSe3 thermoelectric material and rapid preparing method thereof |
CN103715349B (en) * | 2013-12-30 | 2016-05-11 | 北京科技大学 | A kind of preparation method of Ni doping ZnO texture thermoelectric material |
CN105355770B (en) * | 2015-10-13 | 2018-02-16 | 北京科技大学 | A kind of preparation method of C and Al codopes ZnO thermoelectric materials |
CN107994115B (en) * | 2017-12-11 | 2021-05-18 | 武汉科技大学 | Pb/Ba double-doped BiCuSeO thermoelectric material and preparation method thereof |
CN109378381A (en) * | 2018-10-19 | 2019-02-22 | 包头稀土研究院 | High temperature thermoelectric unit and its manufacturing method |
CN109659426B (en) * | 2018-12-14 | 2020-12-22 | 昆明理工大学 | Thermal-function ceramic material with superlattice structure and preparation method and application thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1943052A (en) * | 2004-04-14 | 2007-04-04 | 纳幕尔杜邦公司 | High performance thermoelectric materials and their method of preparation |
CN1974079A (en) * | 2006-12-08 | 2007-06-06 | 中国科学院宁波材料技术与工程研究所 | Process of preparing bismuth telluride-base thermoelectric material |
CN101304829A (en) * | 2005-11-10 | 2008-11-12 | 住友金属矿山株式会社 | Indium nanowire, oxide nanowire, conductive oxide nanowire and manufacturing methods thereof |
-
2009
- 2009-03-20 CN CN2009101198818A patent/CN101508560B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1943052A (en) * | 2004-04-14 | 2007-04-04 | 纳幕尔杜邦公司 | High performance thermoelectric materials and their method of preparation |
CN101304829A (en) * | 2005-11-10 | 2008-11-12 | 住友金属矿山株式会社 | Indium nanowire, oxide nanowire, conductive oxide nanowire and manufacturing methods thereof |
CN1974079A (en) * | 2006-12-08 | 2007-06-06 | 中国科学院宁波材料技术与工程研究所 | Process of preparing bismuth telluride-base thermoelectric material |
Non-Patent Citations (1)
Title |
---|
JP特开2002-118300A 2002.04.19 |
Also Published As
Publication number | Publication date |
---|---|
CN101508560A (en) | 2009-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101508560B (en) | Process for producing codoped In2O3 based pyroelectric material | |
CN104261357B (en) | A kind of Bi2O2Se base thermoelectricity material and preparation method thereof | |
CN102633505A (en) | Method for preparing high-purity MAX-phase ceramic powder | |
CN101913869B (en) | Oxide thermoelectric material capable of being sintered at low temperature and preparation method thereof | |
CN103641484A (en) | Method for preparing Si3N4/SiC composite ceramic powder from biomass power plant ash | |
CN108950278A (en) | A kind of method that microwave heating prepares BiCuSeO thermoelectric block body material | |
CN111470859A (en) | Hexahydric spinel type iron-cobalt-chromium-manganese-magnesium-zinc series high-entropy oxide and powder preparation method thereof | |
CN109627002A (en) | A kind of new method quickly preparing antimony Mg base thermoelectricity material | |
CN108588838A (en) | A method of preparing the SnSe polycrystalline bulks with high thermoelectricity capability | |
CN110078476A (en) | A kind of Al doping BiCuSeO base thermoelectricity material and preparation method thereof | |
CN103436724B (en) | Method for quickly preparing high-performance PbS(1-x)Sex based thermoelectric material | |
CN100363132C (en) | High pressure method for preparing Bi-Te alloy series thermoelectric material | |
CN106045482A (en) | Preparation method of rare earth oxide doped alumina-based high-performance metal melt hydrogen determination probe material | |
CN101338386B (en) | Method for preparing TiNi Sn based thermoelectric compounds | |
CN104402063A (en) | Rapid preparation method of high performance CuFeS2 thermoelectric material | |
CN104404284B (en) | Method for rapid preparation of high performance AgBiSe2 block thermoelectric material | |
CN104004935A (en) | Method for super-rapidly preparing high-performance high-silicon-manganese thermoelectric material | |
CN107793155B (en) | Ultra-fast preparation of Cu2Method for Se bulk thermoelectric material | |
Iyasara et al. | La and Sm co-doped SrTiO3-δ thermoelectric ceramics | |
CN108546108B (en) | Bi2O2Se-based thermoelectric material, preparation method thereof and thermoelectric device | |
CN101905972A (en) | Aluminum-doped zinc oxide-based thermoelectric material and preparation method thereof | |
CN109087987B (en) | α -MgAgSb based nano composite thermoelectric material and preparation method thereof | |
CN106006738A (en) | Ni-doped CuCrO2-based oxide thermoelectric material and preparation method thereof | |
CN103626495B (en) | Preparation method for CIGS target material through pressureless sintering | |
CN103924109B (en) | The supper-fast preparation high-performance CoSb of a kind of Self-propagating Sintering Synthetic 3the method of base thermoelectricity material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110720 Termination date: 20120320 |