CN104004935A - Method for super-rapidly preparing high-performance high-silicon-manganese thermoelectric material - Google Patents
Method for super-rapidly preparing high-performance high-silicon-manganese thermoelectric material Download PDFInfo
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- CN104004935A CN104004935A CN201410227947.6A CN201410227947A CN104004935A CN 104004935 A CN104004935 A CN 104004935A CN 201410227947 A CN201410227947 A CN 201410227947A CN 104004935 A CN104004935 A CN 104004935A
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Abstract
The invention particularly relates to a method for super-rapidly preparing a high-performance high-silicon-manganese thermoelectric material. The method comprises the following steps: 1) weighing Mn powder, M powder and Si powder according to the stoichiometric ratio of each atom of Mn(MxSi<1-x>)1.75, then grinding raw materials, mixing uniformly and pressing into blocks, wherein M is Al or Ge, x is equal to or greater than 0 and less than or equal to 0.0045 when M is Al, and x is equal to or greater than 0 and less than or equal to 0.01 when M is Ge; 2) initiating the blocks obtained in step 1) to carry out thermal explosion synthesis reaction, and naturally cooling after the reaction is completed to obtain a single-phase high-manganese-silicon compound; 3) grinding the single-phase high-manganese-silicon compound into powder and carrying out spark plasma activation sintering to obtain the high-performance high-silicon-manganese thermoelectric material. The method disclosed by the invention has the advantages of high reaction speed, simple process, efficiency and energy conservation, good repeatability and the like, the whole preparation process can be shortened from above 12 hours required in the traditional method to within 0.5 hour, and the obtained blocks have excellent thermoelectric properties.
Description
Technical field
The invention belongs to new energy materials preparing technical field, be specifically related to a kind of supper-fast method of preparing high-performance high manganese-silicon thermoelectric material.
Background technology
The fossil energy non-renewable at oil, coal, Sweet natural gas etc. consumed in a large number and caused under this international big environment of energy starved, develops the only way that the green reproducible energy becomes human society sustainable and stable development.Thermoelectric generation technology is that a kind of Seebeck effect by thermoelectric material and Peltier effect realize the technology of directly mutually changing between electric energy and heat energy, there is the advantages such as, noiselessness little without drive disk assembly, volume, good reliability, it is as a kind of environmentally friendly Energy conversion technology, having important application prospect aspect the recyclings such as industrial exhaust heat and automobile exhaust gas used heat, be subject to the extensive concern in worldwide.The efficiency of conversion of thermoelectric material is mainly determined by thermoelectric figure of merit ZT, ZT=α
2σ T/ κ, wherein α is that Seebeck coefficient, σ are that specific conductivity, κ are that thermal conductivity, T are absolute temperature.
The thermoelectric material of high manganese silicon system, has excellent electrical property and lower thermal conductivity, thereby has higher ZT value.Meanwhile, it has raw material and contains the advantages such as abundant, cheap, nontoxic and pollution-free, becomes the study hotspot in thermoelectricity field in recent years.At present, the method for preparing high manganese-silicon thermoelectric material mainly adopts high-frequency induction scorification and mechanical alloying method.Yet, in melting process, because the velocity of diffusion of Si atom is slower, make the MnSi phase that first generates and the Peritectic Reaction of Si melt be difficult to carry out completely, be difficult to obtain single-phase high manganese silicon compound.Mechanical alloying method is the more method of another kind of application, but because preparation cycle is long, high to equipment requirements, the while easily introduces impurity and is difficult to mass-producing application.Therefore, need to develop at present a kind of fast simple method and prepare highly purified high manganese silicon compound.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of quick method of preparing high-performance high manganese-silicon thermoelectric material for the deficiency of above-mentioned prior art existence, has the advantages such as speed of response is fast, technique is simple, reproducible and energy-efficient.
The present invention is that the technical scheme that the problem of the above-mentioned proposition of solution adopts is:
A novel method for supper-fast preparation high-performance high manganese-silicon thermoelectric material, it comprises the following steps:
1) press Mn (M
xsi
1-x)
1.7the stoichiometric ratio of 5 each atoms weighs Mn powder, M powder, Si powder, then described raw material ground and mixed is evenly pressed into block; Described M is Al or Ge, when M is Al, and 0≤x≤0.0045; When M is Ge, 0≤x≤0.01;
2) by step 1) gained block initiation thermal explosion building-up reactions, reacted rear naturally cooling, obtain single-phase high manganese silicon compound;
3) by the single-phase high manganese silicon compound grind into powder of gained, carry out discharge plasma activated sintering, obtain high-performance high manganese-silicon thermoelectric material.
In such scheme, described step 1) quality purity of Raw Mn powder, M powder, Si powder all >=99.9%.
In such scheme, described step 2) in, thermal explosion building-up reactions is that described block is placed in and in the vertical heater that is sealed in 1160 ℃～1260 ℃ in Glass tubing, carries out the integral body initiation reaction of detonating.
In such scheme, described step 2) in, in thermal explosion reaction, use vacuum or inert atmosphere.
In such scheme, described step 2) in, thermal explosion temperature of reaction is 1160～1260 ℃, and the thermal explosion reaction times is 2～10min.The thermal explosion reaction times can make the appropriate adjustments according to the difference of temperature, and temperature is higher, and the reaction times is shorter, and 1230 ℃ of above reaction times can foreshorten to 2min.
In such scheme, described step 3) powder carries out the process of discharge plasma activated sintering and is: pack powder in the graphite jig that diameter is 15mm compacting, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, sintering time 5～7min.
The present invention can prepare the high manganese silicon of high-performance compact block thermoelectric material fast, can also realize it is carried out to Effective Doping.When the Ge doping of 1.0at% is used in Si position, in 0.5h, can prepare the high manganese silicon bulk thermoelectric material that ZT reaches 0.57 (1023K).Take foregoing as basis, do not departing under the prerequisite of basic fundamental thought of the present invention, according to ordinary skill knowledge and the means of this area, to its content, can also there be modification, replacement or the change of various ways, as thermal explosion reaction atmosphere can be changed to the gas that other does not react with Mn powder and Si powder, doped element can change that other reported into can be to Mn position, Si position Effective Doping element, flash point scope can be 1160～1260 ℃ etc.
Due to Si in solid mass transfer velocity slower, therefore, in traditional preparation technology, conventionally adopt the synthesis mode of high melt (1400 ℃ of >), or react as solid state reaction and mechanical alloying method (> 24h) for a long time, people does not attempt promoting by a large amount of combustion waves that produce in burning building-up process the mass transfer reaction of Si.
Compare with existing high manganese silicon preparation method, advantage of the present invention is:
The first, the present invention adopts thermal explosion combustion synthesis technology to prepare high manganese-silicon thermoelectric material first, has greatly shortened the cycle of preparing high manganese silicon, and not high to equipment requirements, reproducible;
The second, the present invention can prepare high manganese silicon compact block thermoelectric material in 0.5h, and its thermoelectricity capability can reach ZT～0.57.
The 3rd, the present invention has mainly adopted Mn powder, Al powder, Ge powder, the Si powder that earth reserves are abundant, nontoxic and cheap.
Accompanying drawing explanation
Fig. 1 (a) is the XRD figure of block spectrum after powder and PAS after TE in embodiment 1, (b) be this embodiment step 3) in after PAS the FESEM of block scheme.
Fig. 2 (a) is the XRD figure of block spectrum after powder and PAS after TE in embodiment 2, (b) be this embodiment step 3) in after PAS the FESEM of block scheme.
Fig. 3 (a) is the XRD figure of block spectrum after powder and PAS after TE in embodiment 3, and (b) this embodiment is step 3) in the FESEM figure of block after PAS.
Fig. 4 (a) is the XRD figure of block spectrum after powder and PAS after TE in embodiment 4, (b) be this embodiment step 3) in after PAS the FESEM of block scheme.
Fig. 5 (a) is the XRD figure of block spectrum after powder and PAS after TE in embodiment 5, (b) be this embodiment step 3) in after PAS the FESEM of block scheme.
Fig. 6 (a) is the XRD figure of block spectrum after powder and PAS after TE in embodiment 6, (b) be this embodiment step 3) in the FESEM figure of block after PAS, (c) be this embodiment step 3) in the ZT value of thermoelectric material of gained block and the sample prepared with traditional induction melting.
Embodiment
For a better understanding of the present invention, below in conjunction with embodiment, further illustrate content of the present invention, but content of the present invention is not only confined to the following examples.
In following embodiment, the quality purity of Mn powder, Al powder, Ge powder, Si powder all >=99.9%.
Embodiment 1
A novel method for supper-fast preparation high-performance high manganese-silicon thermoelectric material, it comprises the following steps:
1) press MnSi
1.75the stoichiometric ratio of each atom weighs Mn powder, Si powder, and total mass 2.5g is then even by their ground and mixed, and the powder mixing is pressed into the cylindrical block block that diameter is 15mm (40MPa pressurize 15min);
2) by step 1) gained block encloses in vitreosil Glass tubing, and the vertical heater of putting into 1180 ℃ of bulk temperatures carries out thermal explosion reaction (TE, Thermal Explosion), after 10min, take out and naturally cooling;
3) by above-mentioned products therefrom grind into powder, carry out discharge plasma activated sintering (PAS, Plasma Activated Sintering), powder is packed into compacting in the graphite jig of diameter 15mm, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, and the sintering densification time is 5～7min, obtains MnSi
1.75compact block thermoelectric material.
Fig. 1 (a) is the XRD figure of block spectrum after powder and PAS after TE; Fig. 1 (b) is step 3) in the FESEM figure of block after PAS.As can be seen from Figure 1, after TE, products therefrom is single-phase MnSi
1.75compound, after PAS, gained block is single-phase MnSi
1.75compound, and show transgranular fracture, intercrystalline, in conjunction with closely, is fine and close block thermoelectric material.
Embodiment 2
A novel method for supper-fast preparation high-performance high manganese-silicon thermoelectric material, it comprises the following steps:
1) press MnSi
1.75the stoichiometric ratio of each atom weighs Mn powder, Si powder, and total mass 2.5g is then even by their ground and mixed, and the powder mixing is pressed into the cylindrical block block that diameter is 15mm (40MPa pressurize 15min);
2) by step 1) gained block encloses in vitreosil Glass tubing, and the vertical heater of putting into 1237 ℃ of bulk temperatures carries out thermal explosion reaction (TE, Thermal Explosion), after 5min, take out and naturally cooling;
3) by above-mentioned products therefrom grind into powder, carry out discharge plasma activated sintering (PAS, Plasma Activated Sintering), powder is packed into compacting in the graphite jig of diameter 15mm, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, and the sintering densification time is 5～7min, obtains MnSi
1.75compact block thermoelectric material.
Fig. 2 (a) is the XRD figure of block spectrum after powder and PAS after TE; Fig. 2 (b) is step 3) in the FESEM figure of block thermoelectric material after PAS.As can be seen from Figure 2, after TE, products therefrom is single-phase MnSi
1.75compound, after PAS, gained block is single-phase MnSi
1.75compound, and show transgranular fracture, intercrystalline, in conjunction with closely, is fine and close block thermoelectric material.
Embodiment 3
A novel method for supper-fast preparation high-performance high manganese-silicon thermoelectric material, it comprises the following steps:
1) press Mn (Al
0.0015si
0.9985)
1.75the stoichiometric ratio of each atom, the stoichiometric ratio that is Mn, Al and Si is 1:(0.0015*1.75): (0.9985*1.75) weigh Mn powder, Al powder, Si powder, total mass 2.5g, then their ground and mixed is even, the powder mixing is pressed into the cylindrical block block that diameter is 15mm (40MPa pressurize 15min);
2) by step 1) gained block encloses in vitreosil Glass tubing, and the vertical heater of putting into 1237 ℃ of bulk temperatures carries out thermal explosion reaction (TE, Thermal Explosion), after reaction 10min, take out and naturally cooling;
3) by above-mentioned products therefrom grind into powder, carry out discharge plasma activated sintering (PAS, Plasma Activated Sintering), powder is packed into compacting in the graphite jig of diameter 15mm, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, and the sintering densification time is 5～7min, obtains Mn (Al
0.0015si
0.9985) Si
1.75compact block thermoelectric material.
Fig. 3 (a) is the XRD figure of block spectrum after powder and PAS after TE; Fig. 3 (b) is step 3) in the FESEM figure of block after PAS.As can be seen from Figure 3, after TE, products therefrom is single-phase Mn (Al
0.0015si
0.9985) Si
1.75compound, after PAS, gained block is single-phase Mn (Al
0.0015si
0.9985) Si
1.75compound, and show transgranular fracture, intercrystalline, in conjunction with closely, is fine and close block thermoelectric material.
Embodiment 4
A novel method for supper-fast preparation high-performance high manganese-silicon thermoelectric material, it comprises the following steps:
1) press Mn (Al
0.003si
0.997)
1.75the stoichiometric ratio of each atom weighs Mn powder, Al powder, Si powder, and total mass 2.5g is then even by their ground and mixed, and the powder mixing is pressed into the cylindrical block block that diameter is 15mm (40MPa pressurize 15min);
2) by step 1) gained block encloses in vitreosil Glass tubing, and the vertical heater of putting into 1237 ℃ of bulk temperatures carries out thermal explosion reaction (TE, Thermal Explosion), after reaction 10min, take out and naturally cooling;
3) by above-mentioned products therefrom grind into powder, carry out discharge plasma activated sintering (PAS, Plasma Activated Sintering), powder is packed into compacting in the graphite jig of diameter 15mm, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, and the sintering densification time is 5～7min, obtains Mn (Al
0.003si
0.997) Si
1.75compact block thermoelectric material.
Fig. 4 (a) is the XRD figure of block spectrum after powder and PAS after TE; Fig. 4 (b) is step 3) in the FESEM figure of block after PAS.As can be seen from Figure 4, after SHS, products therefrom is single-phase Mn (Al
0.003si
0.997) Si
1.75compound, after PAS, gained block is single-phase Mn (Al
0.003si
0.997) Si
1.75compound, and show transgranular fracture, intercrystalline, in conjunction with closely, is fine and close block thermoelectric material.
Embodiment 5
A novel method for supper-fast preparation high-performance high manganese-silicon thermoelectric material, it comprises the following steps:
1) press Mn (Al
0.0045si
0.9955)
1.75the stoichiometric ratio of each atom weighs Mn powder, Al powder, Si powder, and total mass 2.5g is then even by their ground and mixed, and the powder mixing is pressed into the cylindrical block block that diameter is 15mm (40MPa pressurize 15min);
2) by step 1) gained block encloses in vitreosil Glass tubing, and the vertical heater of putting into 1237 ℃ of bulk temperatures carries out thermal explosion reaction (TE, Thermal Explosion), after reaction 10min, take out and naturally cooling;
3) by above-mentioned products therefrom grind into powder, carry out discharge plasma activated sintering (PAS, Plasma Activated Sintering), powder is packed into compacting in the graphite jig of diameter 15mm, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, and the sintering densification time is 5～7min, obtains Mn (Al
0.0045si
0.9955) Si
1.75compact block thermoelectric material.
Fig. 5 (a) is the XRD figure of block spectrum after powder and PAS after TE; Fig. 5 (b) is step 3) in the FESEM figure of block after PAS.As can be seen from Figure 5, after TE, products therefrom is single-phase Mn (Al
0.0045si
0.9955) Si
1.75compound, after PAS, gained block is single-phase Mn (Al
0.0045si
0.9955) Si
1.75compound, and show transgranular fracture, intercrystalline, in conjunction with closely, is fine and close block thermoelectric material.
Embodiment 6
Heritage is answered smelting preparation process: (1) is by Mn (Ge
0.01si
0.99)
1.75the stoichiometric ratio of each atom weighs Mn powder, Ge powder, Si powder, then described raw material ground and mixed is evenly pressed into block; (2) step (1) gained block is put into high-frequency induction smelting furnace, at 1450 ℃ of melting 10min, obtain ingot body; (3) by the ingot body grind into powder of step (2) gained, carry out discharge plasma activated sintering, obtain high manganese-silicon thermoelectric material.
A novel method for supper-fast preparation high-performance high manganese-silicon thermoelectric material, it comprises the following steps:
1) press Mn (Ge
0.01si
0.99)
1.75the stoichiometric ratio of each atom weighs Mn powder, Ge powder, Si powder as raw material, and total mass 2.5g is then even by their ground and mixed, and the powder mixing is pressed into the cylindrical block block that diameter is 15mm (40MPa pressurize 15min);
2) by step 1) gained block encloses in vitreosil Glass tubing, and the vertical heater of putting into 1237 ℃ of bulk temperatures carries out thermal explosion reaction (TE, Thermal Explosion), after reaction 10min, take out and naturally cooling;
3) by above-mentioned products therefrom grind into powder, carry out discharge plasma activated sintering (PAS, Plasma Activated Sintering), powder is packed into compacting in the graphite jig of diameter 15mm, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, and the sintering densification time is 5～7min, obtains Mn (Ge
0.01si
0.99) Si
1.75compact block thermoelectric material.
Fig. 6 (a) is the XRD figure of block spectrum after powder and PAS after TE; Fig. 6 (b) is step 3) in the FESEM figure of block after PAS; Fig. 6 (c) is step 3) in the ZT value of gained block thermoelectric material.As can be seen from Figure 6, after TE, products therefrom is single-phase Mn (Ge
0.01si
0.99) Si
1.75compound, after PAS, gained block is single-phase Mn (Ge
0.01si
0.99) Si
1.75compound, and show transgranular fracture, intercrystalline, in conjunction with closely, is fine and close block thermoelectric material, the highest ZT value of thermoelectric material prepared by this kind of method can reach 0.57, than traditional method, increases.
Claims (5)
1. a supper-fast method of preparing high-performance high manganese-silicon thermoelectric material, is characterized in that it comprises the following steps:
1) press Mn (M
xsi
1-x)
1.75the stoichiometric ratio of each atom weighs Mn powder, M powder, Si powder, then described raw material ground and mixed is evenly pressed into block; Described M is Al or Ge, when M is Al, and 0≤x≤0.0045; When M is Ge, 0≤x≤0.01;
2) by step 1) gained block initiation thermal explosion building-up reactions, reacted rear naturally cooling, obtain single-phase high manganese silicon compound;
3) by the single-phase high manganese silicon compound grind into powder of gained, carry out discharge plasma activated sintering, obtain high-performance high manganese-silicon thermoelectric material.
2. a kind of quick method of preparing high-performance high manganese-silicon thermoelectric material according to claim 1, is characterized in that described step 1) in Mn powder, M powder, Si powder quality purity all >=99.9%.
3. a kind of quick method of preparing high-performance high manganese-silicon thermoelectric material according to claim 1, is characterized in that described step 2) thermal explosion temperature of reaction is 1160～1260 ℃, the thermal explosion reaction times is 2～10min.
4. a kind of quick method of preparing high-performance high manganese-silicon thermoelectric material according to claim 1, it is characterized in that described step 3) in the powder process of carrying out discharge plasma activated sintering be: pack powder in the graphite jig that diameter is 15mm compacting, then in vacuum, be less than 10Pa and sintering pressure is under 45MPa condition, to carry out sintering, temperature rise rate with 100 ℃/min is warmed up to 1000 ℃, sintering densification time 5～7min.
5. the compact block thermoelectric material that obtains the high manganese silicon of high-performance that in claim 1-4 prepared by any one method.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104402063A (en) * | 2014-11-10 | 2015-03-11 | 武汉理工大学 | Rapid preparation method of high performance CuFeS2 thermoelectric material |
| CN106319269A (en) * | 2016-11-01 | 2017-01-11 | 福州大学 | Cubic phase Ca3Si alloy and preparation method thereof |
| CN107326250A (en) * | 2017-02-27 | 2017-11-07 | 武汉理工大学 | The supper-fast method for preparing high-performance ZrNiSn block thermoelectric materials of one step |
| CN109309155A (en) * | 2017-07-28 | 2019-02-05 | 丰田自动车株式会社 | High manganese silicon substrate tellurides thermoelectric composite material and preparation method thereof |
| CN113462943A (en) * | 2021-06-11 | 2021-10-01 | 武汉理工大学 | Ultra-fast preparation of high-performance YbAl3Method for bulk thermoelectric material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3923041B2 (en) * | 2003-10-06 | 2007-05-30 | 株式会社東芝 | Thermoelectric conversion material and thermoelectric conversion element using the same |
| CN102174677A (en) * | 2011-02-28 | 2011-09-07 | 武汉理工大学 | Solid-phase reaction preparation method for silicious manganese thermoelectric material |
| JP2012174849A (en) * | 2011-02-21 | 2012-09-10 | Toyota Industries Corp | Thermoelectric material |
| CN102931334A (en) * | 2012-06-28 | 2013-02-13 | 北京工业大学 | High-manganese silicon compound thermoelectric material and preparation method thereof |
| CN103165809A (en) * | 2013-03-19 | 2013-06-19 | 武汉理工大学 | Self-propagating high-temperature rapid one-step synthesis thermoelectric material powder with nanostructure Cu2Se method |
-
2014
- 2014-05-27 CN CN201410227947.6A patent/CN104004935B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3923041B2 (en) * | 2003-10-06 | 2007-05-30 | 株式会社東芝 | Thermoelectric conversion material and thermoelectric conversion element using the same |
| JP2012174849A (en) * | 2011-02-21 | 2012-09-10 | Toyota Industries Corp | Thermoelectric material |
| CN102174677A (en) * | 2011-02-28 | 2011-09-07 | 武汉理工大学 | Solid-phase reaction preparation method for silicious manganese thermoelectric material |
| CN102931334A (en) * | 2012-06-28 | 2013-02-13 | 北京工业大学 | High-manganese silicon compound thermoelectric material and preparation method thereof |
| CN103165809A (en) * | 2013-03-19 | 2013-06-19 | 武汉理工大学 | Self-propagating high-temperature rapid one-step synthesis thermoelectric material powder with nanostructure Cu2Se method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104402063A (en) * | 2014-11-10 | 2015-03-11 | 武汉理工大学 | Rapid preparation method of high performance CuFeS2 thermoelectric material |
| CN106319269A (en) * | 2016-11-01 | 2017-01-11 | 福州大学 | Cubic phase Ca3Si alloy and preparation method thereof |
| CN106319269B (en) * | 2016-11-01 | 2017-12-08 | 福州大学 | A kind of Emission in Cubic Ca3Si alloys and preparation method thereof |
| CN107326250A (en) * | 2017-02-27 | 2017-11-07 | 武汉理工大学 | The supper-fast method for preparing high-performance ZrNiSn block thermoelectric materials of one step |
| CN107326250B (en) * | 2017-02-27 | 2019-09-10 | 武汉理工大学 | The method of the supper-fast preparation high-performance ZrNiSn block thermoelectric material of one step |
| CN109309155A (en) * | 2017-07-28 | 2019-02-05 | 丰田自动车株式会社 | High manganese silicon substrate tellurides thermoelectric composite material and preparation method thereof |
| CN109309155B (en) * | 2017-07-28 | 2022-04-19 | 丰田自动车株式会社 | High-manganese-silicon-based telluride thermoelectric composite material and preparation method thereof |
| CN113462943A (en) * | 2021-06-11 | 2021-10-01 | 武汉理工大学 | Ultra-fast preparation of high-performance YbAl3Method for bulk thermoelectric material |
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