CN101506915B - 磁性薄膜 - Google Patents
磁性薄膜 Download PDFInfo
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- CN101506915B CN101506915B CN2007800316017A CN200780031601A CN101506915B CN 101506915 B CN101506915 B CN 101506915B CN 2007800316017 A CN2007800316017 A CN 2007800316017A CN 200780031601 A CN200780031601 A CN 200780031601A CN 101506915 B CN101506915 B CN 101506915B
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000005477 sputtering target Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000013077 target material Substances 0.000 claims description 20
- 229910052742 iron Inorganic materials 0.000 claims description 19
- 229910052697 platinum Inorganic materials 0.000 claims description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 10
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- 230000008021 deposition Effects 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 abstract description 6
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- 239000010408 film Substances 0.000 description 28
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- 230000000052 comparative effect Effects 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- CXURGFRDGROIKG-UHFFFAOYSA-N 3,3-bis(chloromethyl)oxetane Chemical compound ClCC1(CCl)COC1 CXURGFRDGROIKG-UHFFFAOYSA-N 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 4
- 229910002056 binary alloy Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910017888 Cu—P Inorganic materials 0.000 description 3
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- 229910018536 Ni—P Inorganic materials 0.000 description 3
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- 238000013019 agitation Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
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- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002549 Fe–Cu Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Abstract
本发明公开了由40-60原子%Pt、40-60原子%Fe、0.05-1.0原子%P以及根据需要的0.4-19.5原子%Cu和/或Ni构成的磁性薄膜和溅射靶材或蒸镀材料。
Description
技术领域
本发明涉及可用于形成以硬盘等为代表的磁记录介质的磁性薄膜、以及可在其制备中应用的溅射靶材和蒸镀材料。
背景技术
以往,以硬盘等为代表的磁记录介质中采用水平面内(或长度方向)记录方式,但是由于磁极的推斥或热搅动等的影响,会发生记录磁化消失的情况,难以实现高密度化。
由于这些问题,目前采用垂直磁记录方式以实现高密度化。垂直磁记录方式的磁记录介质中,与水平面内记录方式同样,大多使用Co-Cr-Pt-Ta等Co-Cr系合金薄膜,其矫顽力通常为3-4kOe。
由于Co-Cr系合金薄膜的热稳定性欠缺,有人尝试通过添加SiO2等制成颗粒结构,抑制因热搅动等导致的记录磁化消失。
另一方面,为了抑制因更强的热搅动等导致的记录磁化消失,有人尝试开发了具有高矫顽力和磁各向异性的Pt-Fe合金膜(例如参照日本专利第3305790号公报)。该Pt-Fe合金膜通常是通过溅射法或蒸镀法等成膜的,但是所得的合金膜为呈现面心立方结构(fcc)的不规则状态,为了获得具有足够矫顽力的合金膜,必须变换为面心正方结构(fct)的规则状态。为了制成规则状态,通常需要施加热处理。
将Pt-Fe合金膜由不规则状态变换成规则状态(以下称为规则化),必须将该合金膜在600℃以上的温度进行热处理,无法使用铝基板或玻璃基板等在600℃变形的基板,必须使用MgO基板或硅晶片、石英等价格昂贵、在600℃以上的温度下也不变形的基板,因此需要降低规则化的温度。
发明内容
本发明的主要目的是提供在常规的成膜方法——溅射法或蒸镀法等物理气相生长法中,无需特殊处理即可在比Pt-Fe二元体系合金膜低的温度下进行规则化的磁性薄膜。
本发明人为了实现上述目的进行了深入的研究,结果发现:在Pt和Fe中添加特定少量的P制成合金,则可得到可在比Pt-Fe二元体系合金低的温度下进行规则化的磁性薄膜;进一步添加Cu和/或Ni,P的量多于1原子%时规则化温度反而升高的性质得到改善,可以得到可在更低的温度下进行规则化的磁性薄膜,从而完成了本发明。
即,本发明提供由40-60原子%Pt、40-60原子%Fe、0.05-1.0原子%P构成的磁性薄膜、以及溅射靶材或蒸镀材料。
本发明还提供由40-60原子%Pt、40-60原子%Fe和0.05-2.0原子%P以及0.4-19.5原子%Cu和/或Ni构成的磁性薄膜、以及溅射靶材或蒸镀材料。
本发明所提供的磁性薄膜可以通过溅射法或蒸镀法等物理气相生长法容易地形成。
以下,对本发明的磁性薄膜及其制备方法进一步详细说明。
本发明的一个实施方案提供Pt-Fe-P三元体系磁性薄膜,该磁性薄膜是在以40-60原子%、优选40-55原子%Pt以及40-60原子%、优选45-60原子%Fe为基础的Pt-Fe二元体系合金材料中进一步添加P制成合金,并且薄膜化而成的。此时P的添加量可以在0.05-1.0原子%、优选0.1-0.8原子%的范围内。Pt和Fe的用量超过上述范围,则所得薄膜即使热处理也可能无法实现规则化。P的添加量低于0.05原子%,则无法获得降低用于规则化的热处理温度的效果,相反,超过1原子%,则用于规则化的热处理温度高于500℃,失去了添加P的效果。
本发明的又一实施方案提供Pt-Fe-P-(Cu和/或Ni)四或五元体系磁性薄膜,该磁性薄膜是在以40-60原子%、优选40-55原子%Pt以及40-60原子%、优选45-60原子%Fe为基础的Pt-Fe二元体系合金材料中进一步添加P、Cu和/或Ni制成合金,并且薄膜化而成的。此时P的添加量可以在0.05-2.0原子%、优选0.1-1.5原子%的范围内,Cu和/或Ni的添加量合计可在0.4-19.5原子%、优选1.0-10原子%的范围内。Pt和Fe的用量超过上述范围,则所得薄膜即使热处理也可能无法实现规则化。另外,P的添加量低于0.05原子%,则无法获得降低用于规则化的热处理温度的效果,相反,超过2原子%,则用于规则化的热处理温度高于500℃,失去P的添加效果。并且,Cu和/或Ni的添加量低于0.4原子%,则无法获得降低用于规则化的热处理温度的辅助效果,相反,超过19.5原子%,则所得薄膜即使热处理也可能无法实现规则化。
本发明的磁性薄膜可如下制备:使用上述组成的三、四或五元体系合金作为溅射靶材或蒸镀材料,通过溅射法或蒸镀法或离子镀等物理气相生长法形成薄膜状。
通过溅射法制备合金薄膜时,例如可通过高频(RF)溅射法、直流(DC)溅射法、磁控管溅射法、RF磁控管溅射法等进行,具体来说可如下进行:例如在溅射装置中设置规定的溅射靶材和用于使薄膜析出的基板,不加热基板或加热至最高约400℃的温度。
此时使用的溅射靶材可以是含有上述组成比例的Pt-Fe-P三元体系或Pt-Fe-P-(Cu和/或Ni)四或五元体系合金的单一的靶材,或者是例如在Pt靶材上放置Fe-P合金片、Fe-Cu合金片、Fe-Ni合金片、Fe-Cu-P合金片、Fe-Ni-P合金片等合金片的至少一种、达到上述的组成比例的复合靶材。还可以将Fe、Cu和Ni单独作为复合靶材的一部分使用。
通过蒸镀法制备合金薄膜时,例如可如下进行:按照电子束蒸镀法,对以规定比例含有Pt、Fe、P、Cu、Ni而成的蒸镀源照射电子束,使其加热蒸发,在基板上使Pt-Fe-P三元体系或Pt-Fe-P-(Cu和/或Ni)四元或五元体系合金以薄膜的形式堆积。
上述溅射或蒸镀中使用的合金靶材或合金片或蒸镀源可以如下制备:将Pt、Fe、P、Cu和Ni以适当的规定比例组合,在气体炉、高频熔解炉等适当的金属熔解炉内熔融,根据需要在模具中铸造,通过切削进行加工。熔融时的气氛为空气即可,也可根据需要使用惰性气体气氛或真空。作为原料使用的Pt、Fe、P、Cu和Ni可以使用以粒状、板状、块状等形态销售的材料,通常优选纯度为99.9%以上,特别是99.95%以上的材料。上述溅射或蒸镀所使用的合金靶材或合金片或蒸镀源还可通过将Pt、Fe、P、Cu和Ni以适当的规定比例混合,将所得原料粉末进行烧结来制备。烧结时的气氛为惰性气体气氛或真空较为适当。原料的金属粉末通常优选纯度在99.5%以上,特别是99.9%以上的材料。
用于使薄膜析出的基板例如有石英玻璃板、结晶玻璃板、MgO板、Si板等。
在基板上形成的薄膜通常可以具有5-200nm范围内的膜厚。
所得薄膜可通过在约300-约600℃、优选约350-约500℃的温度下热处理来实现规则化,由此可以获得具有更高矫顽力的磁性薄膜。
本发明的磁性薄膜无需特别进行制成颗粒状等的特殊处理即具有高矫顽力,但是通过与SiO2等无机物组合也可以制成形成了颗粒结构的薄膜。
本发明的磁性薄膜可有利地用于要求高矫顽力的硬盘等磁记录介质。由如上所述形成的磁性薄膜制备磁记录介质时,例如可如下进行:使用在非磁性基板上设有软磁性层的基板,如上所述在其上形成本发明的磁性薄膜,进一步根据需要在其上层合保护层、润滑层等。
以下通过实施例更具体说明本发明。
实施例
实施例1-6和比较例1-2
在Pt靶材上放置Fe-P合金片、Fe-Cu-P合金片和/或Fe-Ni-P合金片,准备复合靶材。将该复合靶材放置在RF磁控管溅射装置中,在钠玻璃基板上成膜,制作下表1所示的实施例1-6和比较例2的试样。实施例1和比较例2中,在Pt靶材上放置Fe-P合金片,将基板加热至200℃。在实施例2-6中,在Pt靶材上放置Fe-Cu-P合金片或Fe-Ni-P合金片,基板不加热。
比较例1中,使用石英玻璃作为基板,还使用Pt-Fe合金靶材,制作Pt-Fe二元合金膜。
制作的试样的一部分用王水制成溶液,通过ICP发光分光分析装置进行分析,结果如表1所示。
表1
样品名 | 组成(原子%) | 样品名 | 组成(原子%) |
实施例1 | 48.8Pt,50.9Fe,0.3P | 实施例5 | 45.2Pt,45.5Fe,1.1P,8.2Cu |
实施例2 | 47.9Pt,48.1Fe,0.2P,3.8Cu | 实施例6 | 49.8Pt,45.6Fe,0.6P,4.0Cu |
实施例3 | 49.0Pt,42.8Fe,0.8P,7.4Cu | 比较例1 | 60.5Pt,39.5Fe |
实施例4 | 45.5Pt,50.0Fe,0.6P,3.9Ni | 比较例2 | 47.1Pt,51.7Fe,1.2P |
将形成的膜厚约60-约200nm的表1所示的薄膜在真空中、以下表2所示的温度进行热处理,通过X射线衍射分析其晶体结构,调查是否有fct的峰和规则化温度。结果如表2所示。
表2
(注)fcc:面心立方结构
fct:面心正方结构
由表2可知,实施例1-6的薄膜在低于400℃的热处理温度下实现了规则化,而比较例1-2的薄膜在热处理温度低于400℃下未实现规则化。P量大于1.0原子%的比较例2中,(111)面的峰不清晰,在500℃以下的热处理下未实现规则化。与此相对,同样是P量大于1.0原子%的实施例5的薄膜,在低于400℃的热处理温度下实现了规则化。确认了P的量即使大于1.0原子%,通过追加添加Cu,即使在低于400℃的热处理温度下也可实现规则化。
并且,用振动试样式磁力计(VSM)测定结晶状态为fct的实施例和比较例的薄膜的磁特性(面内矫顽力Hc//以及垂直矫顽力Hc⊥),结果如下表3所示。
表3
由表3可确认,实施例1-6的薄膜在低于400℃下具有3kOe以上的矫顽力,即使降低热处理温度仍可保持高的矫顽力。
这一结果显示,与为了获得高矫顽力而必须用600℃以上的温度进行热处理的比较例1的磁性薄膜相比,在低于400℃的温度下可以进行热处理的实施例1-6的薄膜可以使用在600℃下伴有热变形的基板,具有基板的应用范围扩大的优异效果。
由表3的结果,按照与以低温度进行热处理、矫顽力高的实施例2和3的溅射靶材的组成接近的目标组成将Pt、Fe、P和Cu的颗粒状原料混合,将该混合物在高频熔解炉内熔融,熔解后用碳模具铸造,通过切削加工制作3英寸的溅射靶材。所得溅射靶材的分析结果如下表4所示。
表4
目标组成 | 48Pt、48Fe、0.5P、3.5Cu(原子%) |
分析结果 | 48.6Pt、47.8Fe、0.3P、3.3Cu(原子%) |
由表4可知,制作了几乎接近目标组成的溅射靶材。对所得溅射靶材的多处进行了分析,组成未见变动,均匀。
Claims (11)
1.磁性薄膜,其由40-60原子%Pt、40-60原子%Fe和0.05-1.0原子%P构成,其中所述各成分的总量为100原子%。
2.权利要求1所述的磁性薄膜,其含有0.1-0.8原子%P。
3.磁性薄膜,其由40-60原子%Pt、40-60原子%Fe、0.05-2.0原子%P以及合计0.4-19.5原子%的Cu和/或Ni构成,其中所述各成分的总量为100原子%。
4.权利要求3所述的磁性薄膜,其含有0.1-1.5原子%P。
5.权利要求3所述的磁性薄膜,其含有合计1.0-10原子%的Cu和/或Ni。
6.权利要求1或3所述的磁性薄膜,其是通过物理气相生长法、溅射法或蒸镀法形成的。
7.磁记录介质,其是使用权利要求1-6中任一项所述的磁性薄膜形成的。
8.溅射靶材,其由40-60原子%Pt、40-60原子%Fe和0.05-1.0原子%P构成,其中所述各成分的总量为100原子%。
9.蒸镀材料,其由40-60原子%Pt、40-60原子%Fe和0.05-1.0原子%P构成,其中所述各成分的总量为100原子%。
10.溅射靶材,其由40-60原子%Pt、40-60原子%Fe、0.05-2.0原子%P以及合计0.4-19.5原子%的Cu和/或Ni构成,其中所述各成分的总量为100原子%。
11.蒸镀材料,其由40-60原子%Pt、40-60原子%Fe、0.05-2.0原子%P以及合计0.4-19.5原子%的Cu和/或Ni构成,其中所述各成分的总量为100原子%。
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WO2012073879A1 (ja) * | 2010-11-29 | 2012-06-07 | 三井金属鉱業株式会社 | スパッタリングターゲット |
SG190918A1 (en) * | 2010-11-29 | 2013-07-31 | Mitsui Mining & Smelting Co | Sputtering target |
JP5937318B2 (ja) * | 2011-09-01 | 2016-06-22 | 石福金属興業株式会社 | 磁性薄膜 |
SG11201506142YA (en) * | 2013-05-20 | 2015-09-29 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording medium |
JP6213342B2 (ja) * | 2014-03-28 | 2017-10-18 | 三菱マテリアル株式会社 | 磁気記録膜形成用スパッタリングターゲット及びその製造方法 |
JP6431496B2 (ja) * | 2016-04-13 | 2018-11-28 | 山陽特殊製鋼株式会社 | 磁気記録媒体のシード層用合金、スパッタリングターゲット材および磁気記録媒体 |
CN109439953B (zh) * | 2018-12-25 | 2020-03-24 | 湖北大学 | Fe43.4Pt52.3Cu4.3异质结构相多面体纳米颗粒及其制备方法和应用 |
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