CN100477066C - Cathode structure of back grid field emitting display and preparing method thereof - Google Patents
Cathode structure of back grid field emitting display and preparing method thereof Download PDFInfo
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- CN100477066C CN100477066C CNB2006100393010A CN200610039301A CN100477066C CN 100477066 C CN100477066 C CN 100477066C CN B2006100393010 A CNB2006100393010 A CN B2006100393010A CN 200610039301 A CN200610039301 A CN 200610039301A CN 100477066 C CN100477066 C CN 100477066C
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Abstract
The invention relates to a cathode structure for a back grid field emission display and the preparing method thereof as well as a field emission plate display device, adopting a novel cathode structure, improving resolution and brightness uniformity of the back grid field emission display. And a cathode substrate is provided with stripe back grid electrodes provided with an insulating medium layer which is provided with stripe cathode electrodes vertical to the back grid electrodes; a field emitter layer is arranged on the cathode electrodes and the gaps between cathode electrodes or a stripe emitter layer parallel with the corresponding back grid electrodes is arranged on the cathode electrodes, thus increasing resistances between cathode electrodes as making a large-area field emitter layer; and an anode substrate is provided with a color fluorescent powder pattern; and the cathode substrate and anode substrate are sealed to form the back grid field emission display.
Description
Technical field
The present invention relates to field emission flat-panel display, adopt a kind of novel cathode construction, improve the resolution and the brightness uniformity of back grid field emission display spare, reduce manufacturing cost.
Background technology
Field emission display device (Field Emission Display Panel) is a kind of novel flat-panel display device.This display adopts field emitter as electron source.If field emitter is applied a very strong electric field, because tunnel effect, electronics can escape into vacuum by emitter, produces field emission.The electronics of launching from electron source bombards fluorescent material after focusing on, excitated fluorescent powder is luminous, realizes that image shows.Because the video presenter of field emission display device reason is very approaching with traditional cathode ray tube (Cathode Ray Tube), so field emission display device can reach the image displaying quality identical with CRT.
Field-emitter display is a kind of flat-panel display device, field-transmitting cathode and gate electrode are ranks and arrange, field-transmitting cathode is made up of cathode electrode and field emission body, target and grid apply data-signal and sweep signal respectively, realization matrix scanning, cause selected cathode emission electronics, anode applies with respect to grid and wants high high-voltage signal, is that the bombardment phosphor anode of cathode emission is luminous.In Field Emission Display, the emitting performance of field-transmitting cathode is the key factor that influences its image displaying quality.In order to make cathode emission uniform and stable, between cathode electrode and field emission body, increase by a resistive layer usually.In field emission display,, occur crosstalking of emission between the different cathode columns easily, thereby influence image displaying quality owing to adopt matrix-scanning.Therefore in Field Emission Display, when particularly high-resolution shows, must guarantee that emitter aims at the accurate of cathode electrode, so the difficulty in actual fabrication is bigger.
A kind of can be fairly simple the method for realization large-area manufacturing Field Emission Display screen be adopt back grid Field Emission Display structure as shown in Figure 1.On cathode base 1, at first prepare back grid electrode 2; Thereafter the method by printing or plated film prepares insulating medium layer 3 on back grid; The preparation cathode electrode 4 vertical on dielectric with the back grid electrode direction; Preparation resistive layer 5 and field emitter 6 on cathode electrode; Preparation color phosphor pattern 8 on anode substrate 7; With cathode base and anode substrate sealing-in exhaust, form the vacuum working environment in the device.When the back grid field emission display operate as normal, anode applies a high pressure to guarantee the fluoroscopic energy of electron bombard; Back grid applies sweep signal selection work row; Negative electrode applies data-signal, determines the brightness of each picture element.In this back grid field emission display structure, emitter material must be produced on the cathode electrode exactly.If emissive material slightly surpasses cathode electrode, then may cause the short circuit between the adjacent negative electrode data wire.If the width of emitter material is less than the width of cathode electrode,, driving voltage is increased sharply though can not form short circuit between cathode electrode.When display device resolution was higher, spacing was very little between the cathode electrode, and the patterning of emitter coating prepares that difficulty is big, cost is high.
Summary of the invention
Technical problem: the purpose of this invention is to provide a kind of cathode construction of the good relative cheap back grid field emission display of a kind of high-resolution, brightness uniformity and preparation method thereof with manufacturing cost.
Technical scheme: a kind of cathode construction of back grid field emission display of the present invention, it is the back grid electrode that on cathode base, is provided with strip, on the back grid electrode, be provided with insulating medium layer, on insulating medium layer, be provided with the strip cathode electrode vertical with the back grid electrode direction; Be provided with the field emission body layer on the cathode electrode and on the gap between two cathode electrodes, or on cathode electrode, be provided with the strip field emission body layer parallel, the resistance when increasing large-area manufacturing field emission body layer between the cathode electrode with corresponding back grid electrode; Preparation chromatic colour fluorescent material pattern on anode substrate; Form back grid field emission display by cathode base and anode substrate sealing-in.
But full wafer is manufactured with the field emission body layer on insulating medium layer and cathode electrode.Also can on insulating medium layer and cathode electrode, be manufactured with the strip field emission body layer vertical with cathode electrode.
Its preparation method is:
A.) at first on cathode base, prepare the back grid electrode;
B.) on the back grid electrode, prepare insulating medium layer;
C.) the preparation cathode electrode vertical on insulating medium layer with the back grid electrode direction;
D.) full wafer is made emitter layer on the gap between cathode electrode and the cathode electrode, or makes the strip emitter layer parallel with corresponding back grid electrode on cathode electrode, the resistance when increasing the large-area manufacturing emitter layer between the cathode electrode;
E.) preparation color phosphor pattern on anode substrate;
F.), form the vacuum state in the device with cathode base and anode substrate sealing-in exhaust.
The field emission body layer that full wafer is made is adjusted its resistance characteristic by doping method, makes the phenomenon that is not short-circuited under the effect of cathode voltage signal between the adjacent cathode electrode, and the resistance between each cathode electrode is greater than 2M Ω.
Nano semiconductor material emitter layer or the making strip field emission body layer vertical that the field emission body layer is made by the way full wafer of silk screen printing or chemically grown or physical growth with cathode electrode.
The material of field emission body layer is to be made by zinc oxide or aluminum nitride semiconductor nano material.
Beneficial effect: in common back grid field emission display, emissive material must be printed on the cathode electrode exactly.If emissive material slightly surpasses cathode electrode, then may cause the short circuit between the adjacent negative electrode data wire.If the width of emissive material is less than the width of cathode electrode,, driving voltage is increased sharply though can not form short circuit between cathode electrode.When display device resolution was higher, spacing was very little between the cathode electrode, and the patterning of emitter coating prepares that difficulty is big, cost is high.
The present invention is directed to some difficulties that back grid field emission display is made, adopt novel Nano semiconductor filed emission cathode material such as making large tracts of land such as zinc oxide, aluminium nitride to cover emitter layer on the cathode electrode with certain resistance characteristic, overcome short circuit and the when narrow driving voltage too high problem of the cathode emitter that exists when wide, reduced the cost of making simultaneously.Or on cathode electrode, make the strip emitter layer parallel, the resistance during reduction large-area manufacturing emitter layer between the cathode electrode with corresponding gate electrode.The present invention makes the emitter material layer by the resistance characteristic of the method regulation and control Nano semiconductor field emission body material of doping at the cathode electrode surface full wafer, does not need special pattern picture to handle.Or on cathode electrode, make the strip emitter layer parallel, the resistance when reducing full wafer making emitter layer between the cathode electrode with corresponding gate electrode.This incomplete structure the mask preparation technology and the resistive layer manufacture craft of emitter material layer, reduced the manufacturing cost of display device.In structure proposed by the invention, maximally utilise the rim effect of an emission simultaneously, improved the emitting performance of negative electrode.
Description of drawings
Fig. 1 is existing back grid field-emitter display structural representation.Have among the figure: current-limiting resistance layer 5, emitter layer 6, anode substrate 7, fluorescent material 8.
Fig. 2 adopts full wafer of the present invention to prepare the back grid field-emitter display structural representation of Nano semiconductor emitter layer 6.
Fig. 3 is the novel back grid field-emitter display structural representation that adopts strip Nano semiconductor emitter layer 6 of the present invention.
Have among the above figure: cathode base 1, back grid electrode 2, dielectric layer 3, cathode electrode 4, current-limiting resistance layer 5, emitter layer 6, anode substrate 7, fluorescent material 8.
Embodiment
Back grid field emission display novel cathode structure of the present invention is at first to prepare back grid electrode 2 on cathode base 1, and then preparation insulating medium layer 3 and cathode electrode 4, and full wafer prepares nano semiconductor material cathode emitter layer 6 thereon, perhaps makes the strip emitter layer 6 parallel with corresponding gate electrode on cathode electrode.
Structurally: on cathode base, be provided with the back grid electrode of strip, on the back grid electrode, be provided with insulating medium layer, on insulating medium layer, be provided with the strip cathode electrode vertical with the back grid electrode direction; On the gap between cathode electrode and the cathode electrode, be provided with the field emission body layer, or on cathode electrode, be provided with the strip emitter layer parallel, the resistance when increasing the large-area manufacturing emitter layer between the cathode electrode with corresponding back grid electrode; Preparation chromatic colour fluorescent material pattern on anode substrate; Form back grid field emission display by cathode base and anode substrate sealing-in.
Full wafer is manufactured with the field emission body layer on insulating medium layer and cathode electrode.On insulating medium layer and cathode electrode, be manufactured with the strip field emission body layer vertical with cathode electrode.
The preparation method is:
A.) at first on cathode base 1, prepare back grid electrode 2;
B.) preparation insulating medium layer 3 on back grid electrode 2;
C.) the preparation cathode electrode 4 vertical on insulating medium layer 3 with back grid electrode 2 directions;
D.) full wafer is made emitter layer 6 on the gap between cathode electrode 4 and the cathode electrode 4, or makes the strip emitter layer 6 parallel with corresponding back grid electrode 2, the resistance during increase large-area manufacturing emitter layer between the cathode electrode 4 on cathode electrode 4;
E.) preparation color phosphor pattern on anode substrate 7;
F.), form the vacuum state in the device with cathode base 1 and anode substrate 7 sealing-in exhausts.
The field emission body layer 6 that full wafer is made is adjusted its resistance characteristic by doping method, makes the phenomenon that is not short-circuited under the effect of cathode voltage signal between the adjacent cathode electrode, and the resistance that each cathode electrode is 4 is greater than 2M Ω.
Back grid field emission display technology of the present invention is at first to prepare the back grid electrode on cathode base shown in Figure 2; Thereafter the method by printing or plated film prepares insulating medium layer on back grid; The preparation cathode electrode vertical on dielectric with the back grid electrode direction; By the method for printing, chemically grown, physical growth, be produced on full wafer making Nano semiconductor cathode emitter layer on the gap between cathode electrode and the cathode electrode, as zinc oxide, aluminium nitride etc., patterned process that it goes without doing; Or on cathode electrode, make the strip emitter layer parallel, the resistance when reducing full wafer making emitter layer between the cathode electrode with corresponding gate electrode.Utilize doping technology of semiconductor can adjust the conductivity of emitter material, resistivity is adjusted between 30K Ω m to the 80K Ω m; Preparation color phosphor pattern on anode substrate; With cathode base and anode substrate sealing-in exhaust, form the vacuum working environment in the device.The structure of Huo Deing is because be the Nano semiconductor emitter material between the cathode electrode like this, and its resistance characteristic makes under the potential difference between the cathode electrode not enough so that short circuit between two electrodes.Simultaneously its resistance characteristic can make it replace cathode emitter layer among traditional back grid structure Fig. 1, when the cathode emitter emitting electrons owing to there is voltage drop to act on this emitter, the infringement that can avoid the excessive target of cathode emission electric current to cause.
The difference of novel cathode structure and existing back grid field emission display is:
● by the mode of mixing, the resistivity of control nano semiconductor material field emitter material, making its resistivity is 30K Ω m to 80K Ω m;
● do not need the current-limiting resistance layer 5 on Fig. 1 cathode electrode;
● utilize the method for silk screen printing, chemically grown, physical growth, make the emitter layer of full wafer, do not need it is made patterned process;
● on cathode electrode, make the strip emitter layer parallel, reduce the resistance between the cathode electrode when making emitter layer with corresponding gate electrode.
The back grid field emission display of employing novel cathode structure as shown in Figure 2.Preparation back grid electrode on cathode base; On back grid prepare insulating medium layer thereafter; Prepare the cathode electrode vertical with the back grid electrode direction; Overall printing has Nano semiconductor field emission body layer on cathode electrode; Preparation color phosphor pattern on anode substrate.
Because in new cathode construction, the resistance characteristic that emitter material has makes the resistance between the adjacent cathode electrode be higher than 2M Ω, therefore can avoid the resistance coupling between the cathode electrode.In cathode construction shown in Figure 2, the emitter material longitudinal electrical resistance can play the effect of current-limiting resistance layer.
Claims (6)
1. a kind of cathode construction of a back grid field emission display, it is characterized in that on cathode base (1), being provided with the back grid electrode (2) of strip, on back grid electrode (2), be provided with insulating medium layer (3), on insulating medium layer (3), be provided with the strip cathode electrode (4) vertical with back grid electrode (2) direction; Upward and on the gap between two cathode electrodes (4) be provided with field emission body layer (6) at cathode electrode (4), or on cathode electrode (4), be provided with the strip field emission body layer (6) parallel, the resistance when increasing large-area manufacturing field emission body layer (6) between the cathode electrode (4) with corresponding back grid electrode (2); Go up preparation chromatic colour fluorescent material pattern (8) at anode substrate (7); Form back grid field emission display by cathode base (1) and anode substrate (7) sealing-in; The field emission body layer (6) that full wafer is made is adjusted its resistance characteristic by doping method, makes the phenomenon that is not short-circuited under the effect of cathode voltage signal between the adjacent cathode electrode, and the resistance between each cathode electrode (4) is greater than 2M Ω.
2. a kind of cathode construction of back grid field emission display according to claim 1 is characterized in that being manufactured with field emission body layer (6) at insulating medium layer (3) and the last full wafer of cathode electrode (4).
3. a kind of cathode construction of back grid field emission display according to claim 1 is characterized in that being manufactured with the strip field emission body layer (6) vertical with cathode electrode (4) on insulating medium layer (3) and cathode electrode (4).
4. the preparation method of a kind of cathode construction of a back grid field emission display as claimed in claim 1 is characterized in that:
A.) at first go up preparation back grid electrode (2) at cathode base (1);
B.) go up preparation insulating medium layer (3) at back grid electrode (2);
C.) go up the preparation cathode electrode (4) vertical at insulating medium layer (3) with back grid electrode (2) direction;
D.) full wafer is made emitter layer (6) on the gap between cathode electrode (4) and the cathode electrode (4), or at the last strip emitter layer (6) parallel, the resistance when increasing the large-area manufacturing emitter layer between the cathode electrode (4) made of cathode electrode (4) with corresponding back grid electrode (2);
E.) go up preparation color phosphor pattern at anode substrate (7);
F.), form the vacuum state in the device with cathode base (1) and anode substrate (7) sealing-in exhaust.
5, the preparation method of a kind of cathode construction of back grid field emission display according to claim 4 is characterized in that nano semiconductor material emitter layer (6) or the making strip field emission body layer (6) vertical with cathode electrode that field emission body layer (6) is made by the way full wafer of silk screen printing, chemically grown or physical growth.
6, the preparation method of a kind of cathode construction of back grid field emission display according to claim 4 is characterized in that field emission body layer (6) made by zinc oxide or aluminum nitride semiconductor nano material.
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| CNB2006100393010A CN100477066C (en) | 2006-04-05 | 2006-04-05 | Cathode structure of back grid field emitting display and preparing method thereof |
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| CNB2006100393010A CN100477066C (en) | 2006-04-05 | 2006-04-05 | Cathode structure of back grid field emitting display and preparing method thereof |
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| CN101764026B (en) * | 2009-12-23 | 2011-08-10 | 中原工学院 | Flat panel display of right-angle bending pair-group grid controlled cathode structure and manufacturing process thereof |
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