CN101465402B - Method for manufacturing film LED chip device based on gapless plane bonding - Google Patents
Method for manufacturing film LED chip device based on gapless plane bonding Download PDFInfo
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- CN101465402B CN101465402B CN2008101380765A CN200810138076A CN101465402B CN 101465402 B CN101465402 B CN 101465402B CN 2008101380765 A CN2008101380765 A CN 2008101380765A CN 200810138076 A CN200810138076 A CN 200810138076A CN 101465402 B CN101465402 B CN 101465402B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000010408 film Substances 0.000 claims abstract description 24
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 38
- 229910052594 sapphire Inorganic materials 0.000 claims description 22
- 239000010980 sapphire Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000002955 isolation Methods 0.000 claims description 12
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 5
- 238000003776 cleavage reaction Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000007017 scission Effects 0.000 claims description 3
- 230000002238 attenuated effect Effects 0.000 claims description 2
- 230000005496 eutectics Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910005544 NiAg Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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Abstract
The invention discloses a preparation method of a film LED chip device based on the gapless plane bonding; the method makes use of the smooth surface of an epitaxial wafer without isolated processing to prepare a permanent or temporary substrate; then laser beams are used for unit isolated processing of devices at the interface position between the epitaxial layer and the substrate so as to ensure the combination yield rate of the substrate and the epitaxial layer, thereby ensuring the film-remaining yield rate of the epitaxial thin film layer after laser stripping and also simplifying the traditional production process.
Description
Technical field
The present invention relates to the light-emitting diode chip for backlight unit manufacturing process, especially a kind of method for manufacturing film LED chip device based on gapless plane bonding.
Background technology
For led chip device luminescent properties is promoted, at present, excimer laser is peeled off the sapphire technology and is progressively obtained manufacturing approval of LED and use, but the epitaxial loayer of sapphire after peeling off stays the film quality problem, is puzzlement LED manufacturer's key issue always.Common process is earlier the GaN epitaxial wafer to be carried out the device cycle to isolate, carry out metal bonding then or electroplate permanent (or temporary) substrate, the Sapphire Substrate that will be used for the growing GaN epitaxial loayer is again carried out excimer laser and is peeled off, obtaining remaining in the GaN epitaxial film on permanent (or temporary) temporary substrate, but the film quality that stays of existing traditional handicraft all has much room for improvement.Problem is: because at metal bonding or before electroplating permanent substrate, the GaN epitaxial wafer has been carried out the device cycle isolates, the cycle isolated groove that causes epitaxial surface to produce has directly influenced metal bonding or has electroplated the quality of permanent substrate, and then has influenced the film quality that stays after the follow-up laser lift-off Sapphire Substrate.So, owing to stay the film yield not good, cause based on the volume production cost of the luminescence chip of this technology high.
Summary of the invention
For solving the not good and low problem of yield of bonding quality of above-mentioned metal bonding (and plating) permanent substrate, the present invention is intended to propose a kind of method for manufacturing film LED chip device based on gapless plane bonding.
A kind of method for manufacturing film LED chip device based on gapless plane bonding the steps include:
A) the GaN base epitaxial loayer that growth has n type semiconductor layer, active layer and p type semiconductor layer structure on Sapphire Substrate, GaN base epitaxial loayer is handled without isolation;
B) prepare metal ohmic contact reflection adhesive layer at the p type semiconductor layer top;
C) on metal ohmic contact reflection adhesive layer, wafer and permanent underlay substrate are carried out the metal eutectic bonding;
D) Sapphire Substrate that is used for the growing epitaxial structure being ground attenuated polishing handles;
E) utilize laser beam to see through Sapphire Substrate above-mentioned epitaxial loayer is carried out the processing of device cell isolation;
F) adopt laser-stripping method, whole face is peeled off the above-mentioned Sapphire Substrate in order to growing GaN base epitaxial layer structure, exposes n type semiconductor layer;
G) by the mode of PEC photochemistry assisted etch above-mentioned exposed n type semiconductor layer is handled;
H) mode by the ICP dry etching redefines the unit component film, removes the thin film boundary of damage;
I) at n type semiconductor layer surface preparation high refractive index transparent conductive layer;
J) prepare passivation layer at above-mentioned transparency conducting layer and unit component side surface of thin film;
K) at above-mentioned steps c) described in permanent substrate substrate back preparation back of the body metal level;
L) at above-mentioned steps i) described in layer at transparent layer prepare N electrode metal pad;
M) along step h) described in the unit component border, with unit chip cleavage one by one.
In the process of the present invention, with permanent underlay substrate bonding before, GaN base epitaxial loayer is handled without isolation, to realize gapless plane bonding; With laser beam to GaN base epitaxial loayer and substrate carry out device cell at the interface when isolating operation, the focal position is set in the interface location ± 20um place of epitaxial loayer and substrate through Sapphire Substrate; Before handling, the laser cell isolation need carry out the attenuate of Sapphire Substrate, thickness＜200um, and carry out polishing, to guarantee the penetrability of follow-up laser; The laser that is used for the cell isolation processing is the LASER Light Source of wavelength＜500nm.
The inventive method adopts the mode of laser penetration Sapphire Substrate ablation epitaxial interface with the isolated location chip device, its benefit is: 1) guaranteed permanent (or temporary) best evenness of epitaxial surface when underlay substrate prepares, guaranteeing the quality of substrate bonding or plating, thereby guaranteed the film quality that stays of epitaxial film behind the laser lift-off; 2) this method simplified greatly in the conventional method epitaxial surface carried out blocking and handles after, also need carry out groove and fill a series of complicated procedures of forming of being brought with the evenness of guaranteeing the substrate preparation interface, when guaranteeing processing quality, improved production efficiency.
Description of drawings
Fig. 1 a. to Fig. 1 n. is the schematic cross-section of the luminescent device manufacture process of the preferred embodiment of the present invention;
Fig. 1 o. is the schematic cross-section according to the luminescent device of preferred embodiment of the present invention manufacturing.
Embodiment
The present invention is further described below in conjunction with drawings and Examples.
A kind of method for manufacturing film LED chip device based on gapless plane bonding the steps include:
Step 1: at first, as shown in Figure 1a, heteroepitaxial growth GaN base epitaxial loayer 110a on Sapphire Substrate 100a, this GaN base epitaxial loayer 110a has N-GaN layer, active layer and P-GaN layer; The GaN based epitaxial film is handled without isolation, to realize gapless plane bonding.
Step 2: shown in Fig. 1 b, form metal ohmic contact reflection adhesive layer 120 at above-mentioned GaN base epitaxial loayer 110a top, the first-selected Ag of metallic reflection layer material, thickness is 50～500nm, also can be by Al, Ag, Ni, Au, Cu, the formed alloy of two or more material among Pd and the Rh component group is made, and reach ohmic contact characteristic and strengthen it and the adhesive force of p type semiconductor layer by high annealing in N2 atmosphere, on above-mentioned metallic reflector, prepare metallic bond coat afterwards, the first-selected Ti/Pt/Au alloy of material, thickness is 0.5～10um, also can be by Cr, Ni, Co, Cu, the formed alloy of two or more material among Sn and the Au component group is made.
Step 3: shown in Fig. 1 c, on above-mentioned metal ohmic contact reflection adhesive layer 120, wafer and permanent underlay substrate 130 are carried out bonding (Wafer Bonding).Process conditions: temperature is 50～500 ℃, and pressure is 100～8000N, and the time is 5～240min.The permanent substrate 130 that wherein is used for wafer bonding is the Si single-chip, has prepared in advance and has finished, and its index comprises: Si single-chip thickness is 50～500um, and bonding face weld layer material is selected from Au or AuSn.
Step 4: shown in Fig. 1 d, the above-mentioned Sapphire Substrate 100a that is used for the growing epitaxial structure is ground reduction processing, thickness＜200um, and abradant surface carried out polishing, obtain Sapphire Substrate 100b.
Step 5: shown in Fig. 1 e, utilizing laser beam that above-mentioned GaN base epitaxial loayer 110a is carried out the device cell isolation handles, when isolating operation, the focal position sees through Sapphire Substrate 100b, be set in the interface location ± 20um place of epitaxial loayer 110a and substrate 120, any one LASER Light Source of laser wavelength＜500 nanometers is comprising 193 nanometers, 266 nanometers, 355 nano lasers.
Step 6: shown in Fig. 1 f., adopt laser-stripping method, preferred KrF excimer laser, whole face is peeled off the above-mentioned Sapphire Substrate 100b in order to the growing GaN epitaxial layer structure, makes N type semiconductor epitaxial loayer 110a exposed, as Fig. 1 g..
Step 7: shown in Fig. 1 h., above-mentioned exposed N type semiconductor epitaxial loayer 110a is handled, to obtain high conductivity and band N type semiconductor surface 110b with coarse effect by the mode of PEC (photochemistry assisted etch).
Step 8: shown in Fig. 1 i., the mode by the ICP dry etching redefines unit component film 110b, removes the thin film boundary of damage, obtains unit component film 110c.
Step 9: shown in Fig. 1 j., N type semiconductor surface preparation transparency conducting layer 140 at said units device film 110c, material is the composition metal or the semi-conducting material of high-transmission rate, high conductivity, and preferred ITO (tin indium oxide) also can be NiAu or NiAg.
Step 10: shown in Fig. 1 k., prepare passivation layer 150 on above-mentioned transparency conducting layer 140 surfaces and unit component side surface of thin film, the first-selected silicon dioxide of material also can be insulation light transmissive materials such as silicon nitride.
Step 11: as Figure 11. shown in, at above-mentioned permanent substrate substrate 130 back sides preparation back of the body metal level 160 (being the P electrode metal layer).
Step 12: shown in Fig. 1 m., at the 140 surface preparation N electrode metal pads 170 of the transparency conducting layer described in the above-mentioned steps nine.
Step 13: shown in Fig. 1 n.,,, so far finish the film LED chip device made according to the inventive method shown in Fig. 1 o. with unit chip cleavage one by one along the center, unit component 110c border described in the step 8.
Claims (4)
1. the method for manufacturing film LED chip device based on gapless plane bonding the steps include:
A) the GaN base epitaxial loayer that growth has n type semiconductor layer, active layer and p type semiconductor layer structure on Sapphire Substrate, GaN base epitaxial loayer is handled without isolation;
B) prepare metal ohmic contact reflection adhesive layer at the p type semiconductor layer top;
C) on metal ohmic contact reflection adhesive layer, wafer and permanent underlay substrate are carried out the metal eutectic bonding;
D) Sapphire Substrate that is used for the growing epitaxial structure being ground attenuated polishing handles;
E) utilize laser beam to see through Sapphire Substrate above-mentioned epitaxial loayer is carried out the processing of device cell isolation;
F) adopt laser-stripping method, whole face is peeled off the above-mentioned Sapphire Substrate in order to growing GaN base epitaxial layer structure, exposes n type semiconductor layer;
G) by the mode of PEC photochemistry assisted etch above-mentioned exposed n type semiconductor layer is handled;
H) mode by the ICP dry etching redefines the unit component film, removes the thin film boundary of damage;
I) at n type semiconductor layer surface preparation high refractive index transparent conductive layer;
J) prepare passivation layer at above-mentioned transparency conducting layer and unit component side surface of thin film;
K) at above-mentioned steps c) described in permanent substrate substrate back preparation back of the body metal level;
L) at above-mentioned steps i) described in layer at transparent layer prepare N electrode metal pad;
M) along step h) described in the unit component border, with unit chip cleavage one by one.
2. a kind of method for manufacturing film LED chip device as claimed in claim 1 based on gapless plane bonding, it is characterized in that: with laser beam to GaN base epitaxial loayer and substrate carry out device cell isolation operation at the interface the time, the focal position sees through Sapphire Substrate, is set in the interface location ± 20um place of epitaxial loayer and substrate.
3. a kind of method for manufacturing film LED chip device as claimed in claim 1 based on gapless plane bonding, it is characterized in that: the attenuate that before the laser cell isolation is handled, need carry out Sapphire Substrate, thickness＜200um, and carry out polishing, to guarantee the penetrability of follow-up laser.
4. a kind of method for manufacturing film LED chip device based on gapless plane bonding as claimed in claim 1 is characterized in that: the laser that is used for the cell isolation processing is the LASER Light Source of wavelength＜500nm.
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| CN2008101380765A CN101465402B (en) | 2008-07-11 | 2008-07-11 | Method for manufacturing film LED chip device based on gapless plane bonding |
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| CN2008101380765A CN101465402B (en) | 2008-07-11 | 2008-07-11 | Method for manufacturing film LED chip device based on gapless plane bonding |
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| CN101465402B true CN101465402B (en) | 2010-08-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2012130115A1 (en) * | 2011-04-01 | 2012-10-04 | 厦门市三安光电科技有限公司 | Flip-chip light emitting diode and manufacturing method thereof |
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| CN101660206B (en) * | 2009-09-10 | 2012-07-11 | 厦门市三安光电科技有限公司 | Preparation method of integral GaN-based film |
| TWI427829B (en) | 2010-07-26 | 2014-02-21 | Epistar Corp | A semiconductor optoelectronic device and the method of manufacturing the same |
| CN102376826B (en) * | 2010-08-06 | 2014-08-06 | 晶元光电股份有限公司 | Semiconductor photoelectric element and production method thereof |
| CN102790138B (en) * | 2011-05-19 | 2016-08-31 | 易美芯光（北京）科技有限公司 | A kind of production method of GaN base thin film chip |
| TW201324843A (en) * | 2011-12-09 | 2013-06-16 | Chi Mei Lighting Tech Corp | Manufacturing method of LED |
| CN102664227B (en) * | 2012-04-27 | 2015-12-02 | 杭州士兰明芯科技有限公司 | Semiconductor light emitting diode device and forming method thereof |
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| CN107910414B (en) * | 2017-11-21 | 2020-02-14 | 歌尔股份有限公司 | LED display preparation method and LED display |
| CN108167674A (en) * | 2018-01-30 | 2018-06-15 | 中国科学院工程热物理研究所 | The filament lamp of micron LED chip |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2012130115A1 (en) * | 2011-04-01 | 2012-10-04 | 厦门市三安光电科技有限公司 | Flip-chip light emitting diode and manufacturing method thereof |
| US9006768B2 (en) | 2011-04-01 | 2015-04-14 | Qunfeng PAN | Light emitting diode having increased light extraction |
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| CN101465402A (en) | 2009-06-24 |
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Effective date of registration: 20231101 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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