CN102376826B - Semiconductor photoelectric element and production method thereof - Google Patents
Semiconductor photoelectric element and production method thereof Download PDFInfo
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- CN102376826B CN102376826B CN201010249195.5A CN201010249195A CN102376826B CN 102376826 B CN102376826 B CN 102376826B CN 201010249195 A CN201010249195 A CN 201010249195A CN 102376826 B CN102376826 B CN 102376826B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a semiconductor photoelectric element and a production method thereof. The semiconductor photoelectric element comprises an operation substrate, a semiconductor epitaxial laminated layer, a transparent conductive layer and a first electrode, wherein the semiconductor epitaxial laminated layer is arranged on the operation substrate; the semiconductor epitaxial laminated layer comprises a first semiconductor material layer which is arranged on the operation substrate and has a first conductive property, and a second semiconductor material layer which is arranged on the first semiconductor material layer and has a second conductive property; the transparent conductive layer is arranged on the second semiconductor material layer and comprises a first surface and a second surface; the first surface is provided with a direct contact part and is in direct contact with the second semiconductor material layer; the second surface is actually parallel to the first surface and is provided with a direct contact corresponding part opposite to the direct contact part; and the first electrode is arranged on the operation substrate and electrically connected with the semiconductor epitaxial laminated layer through the transparent conductive layer, wherein the first electrode and the transparent conductive layer are mutually electrically connected through an area except the direct contact part and the direct contact corresponding part.
Description
Technical field
The present invention relates to a kind of semiconductor optoelectronic element and preparation method thereof, especially relate to a kind of transfer apparatus and be placed in semiconductor optoelectronic element on carrying operation substrate and the manufacture method of this semiconductor optoelectronic element.
Background technology
Along with science and technology is maked rapid progress, semiconductor optoelectronic element has great contribution in the transmission of information and the conversion of energy.Taking the utilization of system as example, such as optical-fibre communications, optical storage and military system etc., semiconductor optoelectronic element all can be brought into play to some extent.Conversion regime with energy is distinguished, and semiconductor optoelectronic element generally can be divided three classes: convert electrical energy into the transmitting of light, as light-emitting diode and laser diode; The signal of light is converted to electric signal, as photodetector; The radiant energy of light is converted to electric energy, as solar cell.
Among semiconductor optoelectronic element, growth substrate is being played the part of very important role.Form the necessary semiconductor epitaxial structure of semiconductor optoelectronic element and all grow on substrate, and produce by substrate the effect of supporting.Therefore, select an applicable growth substrate, often become the key factor that determines element growth quality in semiconductor optoelectronic element.
But a good element growth substrate might not be a good element bearing substrate sometimes.Taking light-emitting diode as example, in known ruddiness element technique, for the growth quality of lift element, can select lattice constant and semiconductor epitaxial structure comparatively approach but opaque GaAs substrate as growth substrate.But for to give out light for the light-emitting diode of operation object, among operating process, opaque growth substrate but can cause the luminous efficiency of element to decline.
In order to meet semiconductor optoelectronic element requirement from the different demand conditions of bearing substrate for growth substrate, then the transfer techniques of substrate in response to and give birth to.That is semiconductor epitaxial structure is prior to growing on growth substrate, then the semiconductor epitaxial structure that growth is completed is transferred to bearing substrate, to facilitate follow-up element operation to carry out.After semiconductor epitaxial structure is combined with bearing substrate, the removing of original growth substrate becomes one of key of transfer techniques for this reason.
The mode that removes of known growth substrate mainly comprises dissolves original growth substrate with etching solution etching, worn with physics mode cutting, or between growth substrate and semiconductor epitaxial structure, generate sacrifice layer in advance, then the mode of removing sacrifice layer by etching separates growth substrate etc. with semiconductor.But, no matter be with etching solution dissolving substrate or with the worn substrate of physical property cutting mode, for original growth substrate, be all a kind of destruction.Growth substrate cannot recycle, and in Considering Environmental and energy-conservation modern times, is undoubtedly a kind of waste of material.But, if while using sacrificial layer structure to separate, for semiconductor optoelectronic element, how to carry out selectivity effectively and shift, be one of direction of research at present.
Summary of the invention
For selectivity transfer of semiconductor photoelectric cell effectively, the invention provides a kind of semiconductor optoelectronic element and preparation method thereof, be especially placed in semiconductor optoelectronic element on operation substrate and the manufacture method of this semiconductor optoelectronic element about a kind of transfer apparatus.
Embodiments of the invention provide a kind of semiconductor optoelectronic element, comprising: operation substrate; Semiconductor epitaxial hierarchical element, is arranged on operation substrate, comprises and being arranged on operation substrate, has the first semiconductor material layer of the first conductive characteristic and is arranged on the first semiconductor material layer, has the second semiconductor material layer of the second conductive characteristic; Transparency conducting layer, be arranged on the second semiconductor material layer, transparency conducting layer comprises first surface, direct contact site, be arranged at first surface and directly contact with the second semiconductor material layer, second surface, the parallel first surface of essence, directly contact corresponding portion, be arranged at second surface with respect to direct contact site; And first electrode, be arranged on operation substrate, by transparency conducting layer and semiconductor epitaxial hierarchical element electrically connect; Wherein, the first electrode and the transparency conducting layer mutual electrically connect in region by direct contact site and outside directly contacting corresponding portion.
According to embodiments of the invention, semiconductor epitaxial hierarchical element also comprises luminescent layer, is arranged between the first semiconductor material layer and the second semiconductor material layer.
According to embodiments of the invention, wherein, semiconductor optoelectronic element is light-emitting diode.
According to embodiments of the invention, also comprise the second electrode, be arranged between operation substrate and semiconductor epitaxial hierarchical element or operate the opposition side of substrate with respect to semiconductor epitaxial hierarchical element.
According to embodiments of the invention, wherein, the light transmittance of transparency conducting layer is greater than 90%.
According to embodiments of the invention, wherein, semiconductor optoelectronic element is solar cell.
According to embodiments of the invention, wherein, electrically conducting transparent layer material is selected from the group being made up of the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, aluminum zinc oxide, zinc-gallium oxide and above-mentioned material.
According to embodiments of the invention, also comprise multiple plain conductors, extend to the corresponding portion of direct contact of transparency conducting layer from the first electrode.
According to embodiments of the invention, wherein above-mentioned plain conductor has width and is less than 20 μ m.
According to embodiments of the invention, wherein the first electrode and above-mentioned plain conductor are different materials.
According to embodiments of the invention, wherein the material of the first electrode is the single or multiple lift metal structure being made up of any alloy of titanium, aluminium, gold, chromium, nickel, germanium or above-mentioned material.
According to embodiments of the invention, wherein operate substrate and also there is rough surface towards semiconductor epitaxial hierarchical element, rough surface comprises at least one projection (Protrusion) and/or at least one pothole (Cavity).
Another embodiment of the present invention provides a kind of manufacture method of semiconductor optoelectronic element, comprises growth substrate is provided; Form sacrifice layer on growth substrate; Forming semiconductor epitaxial is stacked on sacrifice layer; Separating semiconductor epitaxial lamination is multiple semiconductor epitaxial hierarchical elements and exposes the sacrifice layer under semiconductor epitaxial hierarchical element; Form patterning photoresist, cover part semiconductor epitaxial hierarchical element and barish sacrifice layer; Remove and be not patterned the sacrifice layer that photoresist covers; Transfer organization is provided, and the semiconductor epitaxial hierarchical element that below sacrifice layer is removed is transferred on transfer organization; Operation substrate is provided, has multiple electrode zones and multiple epi region, electrode zone and epi region are separated by with specific range; Semiconductor epitaxial hierarchical element on transfer transfer organization is to operating in the epi region of substrate; And form multiple the first electrodes in operation substrate electrode zone on, the first electrode and with the semiconductor epitaxial hierarchical element electrically connect being transferred.
According to another embodiment of the present invention, wherein the material of growth substrate is selected from by sapphire (Al
2o
3), the group that forms of silicon (Si), carborundum (SiC), gallium nitride (GaN) and GaAs (GaAs).
According to another embodiment of the present invention, wherein the material of growth substrate is selected from the group being made up of PCB substrate and FR4 substrate.
According to another embodiment of the present invention, wherein transfer organization is mainly made up of high-molecular organic material.
According to another embodiment of the present invention, also comprise and form adhesion coating between operation substrate and semiconductor epitaxial hierarchical element, the material of adhesion coating is selected from the group that high-molecular organic material, metal material and metal alloy form.
According to another embodiment of the present invention, wherein semiconductor epitaxial hierarchical element is LED epitaxial lamination area and/or solar cell extension lamination region.
According to another embodiment of the present invention, also comprise the surface of roughening operation substrate, make surface comprise at least one projection and/or at least one pothole.
According to another embodiment of the present invention, the material that wherein operates substrate is selected from by sapphire (Al
2o
3), the group that forms of silicon (Si), carborundum (SiC), aluminium nitride (AlN), gallium nitride (GaN) and GaAs (GaAs).
According to another embodiment of the present invention, also comprise and form at least one second electrode in semiconductor epitaxial hierarchical element and operate between substrate or operate the opposition side of substrate with respect to semiconductor epitaxial hierarchical element.
According to another embodiment of the present invention, wherein transfer organization has transitional surface, and surface has adherence and/or at least one projection of the semiconductor epitaxial hierarchical element that is removed corresponding to below sacrifice layer.
Another embodiment of the present invention provides a kind of light-emitting diode structure, comprises operation substrate, has surface, comprises multiple the first epi region and multiple the second epi region; Multiple the first LED epitaxial hierarchical elements are arranged in the first epi region, can radiate the first main radiation wavelength, the wherein surperficial first side of arbitrary the first LED epitaxial hierarchical element operation repetitive substrate, and the extended line of first side has the first extending direction that essence is parallel to each other; Multiple the second LED epitaxial hierarchical elements are arranged in the second epi region, can radiate the second main radiation wavelength, wherein arbitrary the second LED epitaxial hierarchical element has the Second Edge that corresponds to first side, and the extended line of Second Edge has the second extending direction that essence is parallel to each other; And first direction, the surface of operation repetitive substrate, wherein, the first extending direction and first direction have angle theta
1, the second extending direction and first direction have angle theta
2, and θ
1be not equal to θ
2.
According to another embodiment of the present invention, wherein the first main radiation wavelength is between between 600nm to 650nm.
According to another embodiment of the present invention, wherein the first main radiation wavelength is between between 510nm to 550nm.
According to another embodiment of the present invention, wherein the first main radiation wavelength is between between 390nm to 440nm.
According to another embodiment of the present invention, wherein the first main radiation wavelength is not equal to the second main radiation wavelength.
According to another embodiment of the present invention, wherein arbitrary the first LED epitaxial hierarchical element and arbitrary the second LED epitaxial hierarchical element also comprise semiconductor epitaxial lamination, be arranged on the surface of operation substrate, semiconductor epitaxial lamination comprises on the surface that is arranged at operation substrate having the first semiconductor material layer of the first conductive characteristic; Be arranged on the first semiconductor material layer, there is the second semiconductor material layer of the second conductive characteristic; And luminescent layer, be arranged between the first semiconductor material layer and the second semiconductor material layer.
According to another embodiment of the present invention, wherein arbitrary the first LED epitaxial hierarchical element and/or arbitrary the second LED epitaxial hierarchical element also comprise the first electrode, are arranged at semiconductor epitaxial hierarchical element and correspond between the surface that operates opposition side, the semiconductor epitaxial hierarchical element of substrate and operate substrate or operate the opposition side of substrate with respect to semiconductor epitaxial hierarchical element.
Brief description of the drawings
Figure 1A is schematic diagram, shows the schematic side view of semiconductor optoelectronic element manufacture method first step;
Figure 1B is schematic diagram, shows the schematic top plan view of semiconductor optoelectronic element manufacture method first step;
Fig. 1 C is schematic diagram, shows the schematic side view of cutting according to the C-C ' line segment of overlooking Figure 1B;
Fig. 2 is schematic diagram, shows colorful display device schematic top plan view;
Fig. 3 A is schematic diagram, shows the schematic top plan view of semiconductor optoelectronic element manufacture method second step;
Fig. 3 B is schematic diagram, shows the second step schematic side view according to B-B ' the line segment cutting of vertical view 3A;
Fig. 3 C is schematic diagram, shows the third step part schematic side view of semiconductor optoelectronic element manufacture method;
Fig. 4 A is schematic diagram, shows the 4th step part schematic side view of semiconductor optoelectronic element manufacture method;
Fig. 4 B is schematic diagram, shows the selectivity step schematic side view of the 4th step of semiconductor optoelectronic element manufacture method;
Fig. 4 C is schematic diagram, shows the selectivity step schematic side view of the 4th step of semiconductor optoelectronic element manufacture method;
Fig. 4 D is schematic diagram, shows the selectivity step schematic side view of the 4th step of semiconductor optoelectronic element manufacture method;
Fig. 4 E is schematic diagram, shows the selectivity step schematic side view of the 4th step of semiconductor optoelectronic element manufacture method;
Fig. 5 A is schematic diagram, shows the schematic top plan view of semiconductor optoelectronic element manufacture method the 5th step;
Fig. 5 B is schematic diagram, shows the 5th step schematic side view according to B-B ' the line segment cutting of vertical view 5A;
Fig. 6 is schematic diagram, shows the schematic top plan view of semiconductor optoelectronic element manufacture method the 6th step;
Fig. 7 A is schematic diagram, shows according to the semiconductor optoelectronic element structure schematic side view shown in another embodiment of the present invention;
Fig. 7 B is schematic diagram, shows the schematic side view according to semiconductor epitaxial hierarchical element 4 parts of end view 7A;
Fig. 7 C is schematic diagram, shows according to the semiconductor epitaxial hierarchical element 4 of end view 7A and the schematic perspective view of transparency conducting layer 16 parts;
Fig. 8 is schematic diagram, shows according to the semiconductor optoelectronic element structure schematic side view shown in another embodiment of the present invention;
Fig. 9 A is schematic diagram, shows according to the light-emitting diode structure schematic side view shown in another embodiment of the present invention;
Fig. 9 B is schematic diagram, shows the schematic side view according to the semiconductor epitaxial hierarchical element part of end view 9A;
Figure 10 is schematic diagram, shows according to the light-emitting diode structure schematic side view shown in another embodiment of the present invention.
Description of reference numerals
1: growth substrate;
2: sacrifice layer;
2 ': sacrifice layer sidewall;
3: semiconductor epitaxial lamination;
4: semiconductor epitaxial hierarchical element;
The 4 ': the first semiconductor epitaxial hierarchical element;
4 ": the second semiconductor epitaxial hierarchical element;
5: patterning photoresist layer;
6,6 ": transfer organization;
6 ': transitional surface;
7: operation substrate;
7 ": operation substrate surface;
8: electrode zone;
9: epi region;
10: adhesion coating;
11: the first electrodes;
12: plain conductor;
13: the first semiconductor material layers;
14: the second semiconductor material layers;
15: luminescent layer;
16: transparency conducting layer;
16 ': first surface;
16 ": second surface;
17: insulating barrier;
18: directly contact site;
18 ': directly contact corresponding portion;
19: the first epi region;
20,30: semiconductor optoelectronic element;
21: the second epi region;
22: the first LED epitaxial hierarchical elements;
23: the second LED epitaxial hierarchical elements;
24: first direction;
25,27: first side;
26: the first extending directions;
28: the second extending directions;
40,50: light emitting diode construction;
61: the projection of transitional surface;
62: the projection of transitional surface;
71: the lower surface of operation substrate;
101: red light semiconductor extension lamination unit;
102: green glow semiconductor epitaxial hierarchical element;
103: blue-light semiconductor extension lamination unit.
Embodiment
Please refer to Fig. 1, Fig. 1 is the manufacture method according to the semiconductor optoelectronic element of the embodiment of the present invention.First, according to side-looking Figure 1A, first provide growth substrate 1, and form sacrifice layer 2 on growth substrate 1, then form semiconductor epitaxial lamination 3 on sacrifice layer 2.Wherein, the material of growth substrate 1 for example can be selected from by sapphire (Al
2o
3), the group that forms of silicon (Si), carborundum (SiC), gallium nitride (GaN) and GaAs (GaAs), and the material of sacrifice layer 2 for example can be aluminium arsenide (AlAs), calorize gallium arsenic (AlGaAs) and zinc oxide (ZnO), and semiconductor epitaxial lamination 3 can be for example LED epitaxial lamination and/or solar cell extension lamination.Then, please, respectively simultaneously with reference to overlooking Figure 1B and end view 1C, with known production method, for example separating semiconductor epitaxial lamination for modes such as dry ecthing, wet etching or laser cutting is multiple semiconductor epitaxial hierarchical elements 4.After separation, as shown in Figure 1 C, expose the sidewall 2 ' of the sacrifice layer 2 under multiple semiconductor epitaxial hierarchical elements 4.Similarly, semiconductor epitaxial hierarchical element 4 can be for example LED epitaxial lamination area and/or solar cell extension lamination region.
After forming the structure of multiple semiconductor epitaxial hierarchical elements 4 in above-mentioned mode on growth substrate 1, semiconductor epitaxial hierarchical element 4 will optionally be transferred to semiconductor epitaxial hierarchical element on operation substrate according to subsequent technique or application demand.Taking Fig. 2 as example, show the colorful display device being formed by red light semiconductor extension lamination unit 101, green glow semiconductor epitaxial hierarchical element 102 and blue-light semiconductor extension lamination unit 103 respectively.For coordinating this colorful display device, in the time that the multiple semiconductor epitaxial hierarchical elements 4 on growth substrate radiate red light wavelength, according to the configuration of red light semiconductor extension lamination unit 101 on colorful display device, semiconductor epitaxial hierarchical element 4 will be alternately by being optionally transferred to operation substrate on growth substrate 1, on colorful display device.
The technique shifting as described in Fig. 3 A to 3C next, the second semiconductor epitaxial hierarchical element 4 that need to be transferred " and the first semiconductor epitaxial hierarchical element 4 ' that does not need to shift see through different photoresist coverage modes and comply with follow-up step and reach the effect that can carry out selectivity transfer.In order optionally to shift the semiconductor epitaxial hierarchical element 4 of specific part, as shown in the end view 3B of B-B ' line segment in vertical view 3A and vertical view 3A, photoresist layer 5 cover part semiconductor epitaxial hierarchical element 4 with patterning: for the first semiconductor epitaxial hierarchical element 4 ' that need not shift, envelope in the mode covering completely the surface that comprises semiconductor epitaxial lamination with and lower exposed sacrifice layer sidewall 2 '; The the second semiconductor epitaxial hierarchical element 4 being transferred for needs ", cover part reaches simple fixing effect, and exposes sacrifice layer sidewall 2 '.Then, use known etching technique, for example wet etching, utilizes etching solution to remove the second semiconductor epitaxial hierarchical element 4 via the sacrifice layer sidewall 2 ' exposing " under sacrifice layer 2.After this step, the sacrifice layer 2 of 4 belows, part semiconductor extension lamination unit is optionally removed, and as shown in end view 3C, represents that vertical view 3A middle conductor B-B ' is via the result that removes step rear section sacrifice layer 2 and be removed in figure.
See through this kind of mode, after semiconductor epitaxial hierarchical elements 4 all on growth substrate is all removed, original growth substrate, owing to not wrecking, can see through after general cleaning process, reclaim and will use once again.
In addition, can also use the etched mode of wet oxygen, by adding hot and humid oxygen, oxidation sacrifice layer 2 materials, make the volumetric expansion of sacrifice layer 2 material own, reduce sacrifice layer 2 and semiconductor epitaxial hierarchical element 4 adherence (not shown) to each other, and can make semiconductor epitaxial hierarchical element 4 initiatively separate with sacrifice layer 2.After both are separated from each other, then remove material with etching solution and stay the oxidized sacrifice layer 2 of part on semiconductor epitaxial hierarchical element 4 surfaces.
For the part semiconductor extension lamination unit that selectivity transfer below sacrifice layer 2 is removed effectively, i.e. the second semiconductor epitaxial hierarchical element 4 ", use transfer organization 6 to carry out branching program.The material of transfer organization 6 is mainly made up of high-molecular organic material, for example, be foamed glue or PI adhesive tape (tape).Transfer organization 6 has the transitional surface 6 ' towards semiconductor epitaxial hierarchical element 4, and wherein transitional surface 6 ' can be and has adhesive surface or comprise at least one and the second semiconductor epitaxial hierarchical element 4 that must shift " corresponding projection 61.See through the adhesion strength of transitional surface 6 ' or by being accumulated in transitional surface projection 61 and the second semiconductor epitaxial hierarchical element 4 " electrostatic attraction that produces of electric charge between surface; optionally to the second semiconductor epitaxial hierarchical element 4 " carry out suction-operated, and by the second semiconductor epitaxial hierarchical element 4 " be transferred on transfer organization 6, as shown in Figure 4 A.
In addition be transferred to, the second semiconductor epitaxial lamination 4 of transfer organization 6 " on be still attached with partially patterned photoresist layer 5.Therefore, for remove patterning photoresist layer 5 or need to be by the second semiconductor epitaxial hierarchical element 4 according to structural design demand " while being arranged at upside down on operation substrate, can optionally carry out secondary transferring technology.; as shown in Fig. 4 B to 4D; when the second semiconductor epitaxial hierarchical element 4 " be transferred to after transfer organization 6, originally covered part the second semiconductor epitaxial hierarchical element 4 " the patterning photoresist layer 5 of upper surface is still attached to the second semiconductor epitaxial hierarchical element 4 " be not removed with transfer organization 6.Now, can be first by the second semiconductor epitaxial hierarchical element 4 on transfer organization 6 " be transferred to the second transfer organization 6 ", with photoresist remove liquid remove be still attached to the second semiconductor epitaxial hierarchical element 4 " patterning photoresist layer 5 after, then carry out secondary transferring by the second transfer organization 6 " on the second semiconductor epitaxial hierarchical element 4 " be transferred on operation substrate 7.Similarly, the second transfer organization 6 " material mainly formed by high-molecular organic material, be for example foamed glue or PI adhesive tape.The second transfer organization 6 " have towards the semiconductor epitaxial hierarchical element 4 shifting " transitional surface, wherein transitional surface can be and has adhesive surface or comprise at least one and the second semiconductor epitaxial hierarchical element 4 that must transfer " corresponding projection 62.See through the second transfer organization 6 " adhesion strength on surface or be accumulated in projection 62 and the second semiconductor epitaxial hierarchical element 4 of transitional surface " electrostatic attraction that produces of electric charge between surface, optionally to the second semiconductor epitaxial hierarchical element 4 " again carry out suction-operated, by the second semiconductor epitaxial hierarchical element 4 " be transferred to the second transfer organization 6 " on.
Finally, as shown in Figure 4 E, then by the second semiconductor epitaxial unit 4 " by the second transfer organization 6 " be transferred on operation substrate 7.Certainly if while only carrying out a transfer step, the second semiconductor epitaxial unit 4, " can also be similar mode be directly transferred on operation substrate 7 by transfer organization 6.
As shown in Figure 5A, on operation substrate 7, have multiple electrode zones 8 and multiple epi region 9, wherein, electrode zone 8 is separated by a certain distance with epi region 9, and the material of operation substrate 7 can be for example sapphire (Al
2o
3), silicon (Si), carborundum (SiC), gallium nitride (GaN), GaAs (GaAs) or aluminium nitride (AlN).Or operation substrate 7 is PCB substrate or FR4 substrate.FR4 substrate is glass cloth substrate, is to soak by glass cloth the plate-like layers stampings that form through HTHP hot pressing with materials such as epoxy phenolicss.By multiple the second semiconductor epitaxial hierarchical elements 4 that are placed on transfer organization 6 (or the second transfer organization 6 ") " be transferred on operation substrate 7, its mode is for example for forming adhesion coating 10 in operation substrate 7 and the second semiconductor epitaxial hierarchical element 4 " between, the mode by heating is to operating substrate 7 and the second semiconductor epitaxial hierarchical element 4 " adhere.Because the effect of heating, simultaneously can make the second semiconductor epitaxial hierarchical element 4 " with transfer organization 6 (6 ") between absorption affinity decline (adherence of transitional surface 6 ' because of heating reduce), add adhesion coating 10 to the second semiconductor epitaxial hierarchical element 4 " with the absorption affinity of operation substrate 7, can be by the second semiconductor epitaxial hierarchical element 4 " on transfer organization 6 (6 "), be transferred to operation substrate 7.Wherein, the material of adhesion coating 10 can be high-molecular organic material, metal material or metal alloy compositions.In addition, in order to increase light extraction efficiency or other objects of element, can also be optionally on the surface 7 of operation substrate 7 " carry out roughening, make surface 7 " comprise at least one projection (not shown) and/or at least one pothole (not shown).As shown in B-B ' line segment end view 5B in Fig. 5 A, optionally transfer part the second semiconductor epitaxial hierarchical element 4 " in the epi region 9 of operation substrate 7, and be separated by with specific range with electrode zone 8.
Finally, as shown in Figure 6, electrode zone 8 at operation substrate 7 forms the first electrode 11, the first electrode 11 by the plain conductor 12 that extends from its body or see through other conducting mediums, for example for the transparent conductive material of the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, aluminum zinc oxide, zinc-gallium oxide or above-mentioned material etc. and transfer and be arranged on the second semiconductor epitaxial hierarchical element 4 of corresponding epi region 9 " electrically connect separately.
In addition, for reaching the object of element conduction, in making step, also can comprise and form the second electrode (not shown) in the second semiconductor epitaxial hierarchical element 4 " with operation substrate 7 between or operate substrate 7 with respect to the second semiconductor epitaxial hierarchical element 4 " opposition side.
Please refer to Fig. 7 A and Fig. 8, be shown as according to the above-mentioned single semiconductor optoelectronic element 20 of production method made and the end view of semiconductor optoelectronic element 30 of the present invention's spirit.Semiconductor optoelectronic element 20 and 30 can be for example solar cell or light-emitting diode.
As shown in Fig. 7 A to Fig. 7 C, semiconductor optoelectronic element 20 comprises operation substrate 7, and semiconductor epitaxial hierarchical element 4 is arranged on operation substrate 7.Then, amplification semiconductor extension lamination unit 4 as shown in Figure 7 B, semiconductor epitaxial hierarchical element 4 comprise be arranged at operation substrate 7 on, there is the first semiconductor material layer 13 of the first conductive characteristic, it is for example p-type semiconductor material layer, and be arranged on the first semiconductor material layer 13, there is the second semiconductor material layer 14 of the second conductive characteristic, be for example N-shaped semiconductor material layer.In the time that semiconductor optoelectronic element 20 and 30 is light-emitting diode, 4 of semiconductor epitaxial hierarchical elements can comprise again luminescent layer 15, are arranged between the first semiconductor material layer 13 and the second semiconductor material layer 14.
With reference to figure 7A, among semiconductor optoelectronic element 20, also comprise transparency conducting layer 16, be arranged on operation substrate 7.The second surface 16 that transparency conducting layer 16 comprises first surface 16 ' and almost parallel first surface ".Upper at first surface 16 ', the second semiconductor material layer 14 has part directly to contact with transparency conducting layer 16, is defined as a direct contact site 18.At second surface 16 " be called the corresponding portion 18 ' of direct contact with respect to the position of first surface 16 ' direct contact site, amplify as shown in Fig. 7 C.Note that in Fig. 7 C as clear and represent both relative positions of contacting of transparency conducting layer 16 and the second semiconductor material layer 14 in semiconductor epitaxial hierarchical element 4, thus both separated a little, but both are essentially and are in contact with one another.Wherein, the material of transparency conducting layer 16 can be the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, aluminum zinc oxide, zinc-gallium oxide or above-mentioned material.In order to increase the efficiency of element bright dipping or extinction, in the preferred case, transparency conducting layer 16 light transmission efficiencies that are covered on semiconductor epitaxial hierarchical element 4 should be greater than 90%.
Continue with reference to figure 7A, for reaching element and extraneous electrically connect, among the present embodiment, on operation substrate 7, also include first electrode 11 and be arranged on direct contact site 18 and the direct region contacting outside corresponding portion 18 ' on transparency conducting layer 16, carry out electrically connect by transparency conducting layer 16 and semiconductor epitaxial hierarchical element 4.See through such design, what cover due to semiconductor epitaxial hierarchical element 4 tops be transparent material, no matter the efficiency that semiconductor optoelectronic element 20 is bright dipping or extinction can obtain significantly lifting.It should be noted that the firm and efficiency in order to increase component structure, can also optionally protect with insulation material layer 17 at the part surface of semiconductor epitaxial hierarchical element 4, insulating material can for example be thought common silica or silicon nitride material.In addition,, described in above-mentioned manufacture method, in this structure, between semiconductor epitaxial hierarchical element 4 and operation substrate 7, one deck adhesion coating 10 is also optionally set to reach the effect of mutual adhesion.
Then with reference to Fig. 8, Fig. 8 is another semiconductor optoelectronic element 30 of the spirit made according to the present invention.In this embodiment, the structure similar to last embodiment repeats no more.Different is, in the present embodiment, the first electrode 11 on semiconductor optoelectronic element 30 also comprises that multiple plain conductors 12 extend to the corresponding portion 18 ' of direct contact from the first electrode, increases the electrical efficiency of element by the lower resistance value characteristic of metal, and its vertical view can be in the lump with reference to Fig. 6.Wherein, the single or multiple lift metal structure that the material of the first electrode 11 can be made up of titanium, aluminium, gold, chromium, nickel, germanium or above-mentioned any alloy, plain conductor 12 is preferably to be had width and is less than 20 μ m, and plain conductor 12 can also be optionally made by different materials with the first electrode 11.
In addition, for reaching the object of element conduction, in structure, also can comprise and form the second electrode (not shown) in semiconductor epitaxial hierarchical element 4 and operate between substrate 7 or operate the opposition side of substrate 7 with respect to semiconductor epitaxial hierarchical element 4, operate the lower surface 71 of substrate.In order to increase light extraction efficiency or other objects of element, can also include the roughened textures of at least one projection (not shown) and/or at least one pothole (not shown) on the surface of operation substrate 7.
Fig. 9 A is depicted as a kind of light emitting diode construction 40 according to the present invention's spirit made.In structure 40, comprise operation substrate 7, operation substrate 7 has surface 7 ", on surface, comprise multiple the first epi region 19 and multiple the second epi region 21.In each epi region, all comprise an above-mentioned semiconductor optoelectronic element (in this case light-emitting diode).That is to say, in each epi region, all comprise a LED epitaxial hierarchical element.It should be noted that included in the first epi region 19 is the first LED epitaxial hierarchical element 22 of radiation the first main radiation wavelength, and the first main radiation wavelength is radiation ruddiness in the present embodiment, and wavelength is between between 600nm to 650nm.Certainly, according to different demands, the first main radiation wavelength can be maybe green glow, and wavelength, between between 510nm to 550nm, can be maybe blue light, and wavelength is between between 390nm to 440nm; And included in the second epi region 21 be the second LED epitaxial hierarchical element 23 of radiation the second main radiation wavelength, the second main radiation wavelength is radiation green glow in the present embodiment, wavelength is between between 510nm to 550nm.In embodiment, the first main radiation wavelength can be not equal to the second main radiation wavelength.
The production method of the semiconductor optoelectronic element of introducing by above-described embodiment, even if include two kinds (as these structures 40) or above different extension lamination unit (in this case thering is the LED epitaxial hierarchical element of different main radiation wavelength) on single operation substrate, can be easily according to demand through transfer once, on alternative spontaneous long substrate, shift multiple grow in single-phase with diverse location on growth substrate but the LED epitaxial hierarchical element that can radiate identical main radiation wavelength to operating on substrate.Therefore, taking the structure 40 of Fig. 9 A as example, only need the transfer action of twice, shift ruddiness extension lamination unit from the growth substrate of growth red light-emitting diode element for the first time, shift green glow extension lamination unit from the growth substrate of growth green light LED element for the second time, the preliminary structure that on can complete operation substrate, all extension lamination unit arranges, and not need with manually choose or a unit, mode Unit one such as robotic arm gripping shift, can shorten the time of technique.
Same, please refer to Fig. 9 B, among light emitting diode construction 40, each LED epitaxial hierarchical element 22 and 23 comprises respectively first semiconductor material layer 13 with the first conductive characteristic, for example, be p-type semiconductor material layer, is arranged on the first semiconductor material layer 13, there is the second semiconductor material layer 14 of the second conductive characteristic, be for example N-shaped semiconductor material layer, and luminescent layer 15, be arranged between the first semiconductor material layer 13 and the second semiconductor material layer 14.
In addition, described in the above embodiments, for reaching the object of element conduction, in structure 40, each first LED epitaxial hierarchical element 22 and/or the second LED epitaxial hierarchical element 23 also can comprise that a first electrode (not shown) is arranged at the opposition side of semiconductor epitaxial hierarchical element with respect to operation substrate 7, at the present embodiment, be and be arranged on semiconductor epitaxial hierarchical element; Or be arranged at semiconductor epitaxial hierarchical element and operation substrate 7 surface 7 " between; Or operation substrate 7 is with respect to the opposition side of semiconductor epitaxial hierarchical element, operates the lower surface of substrate.In order to increase light extraction efficiency or other objects of element, can also include the roughened textures of at least one projection (not shown) and/or at least one pothole (not shown) on the surface of operation substrate 7.
It should be noted that when carrying out shifting process each time, between operation substrate 7 and transfer organization 6 (6 "), have the possibility of generation bit errors.May there is the situation as Figure 10 in the light emitting diode construction that therefore, carries out selectivity shifting process.Taking light emitting diode construction 50 as example, the surface 7 of definition first direction 24 operation repetitive substrates 7 "; because the first LED epitaxial hierarchical element 22 of radiation the first main radiation wavelength is to transfer to together on operation substrate 7 in a same shifting process; therefore, the angular deflection remote-effects that can produce transfer organization itself are attached to the first LED epitaxial hierarchical elements 22 all on transfer organization and produce together the situation of identical contraposition angular deflection.In the same manner, the second LED epitaxial hierarchical element 23 of radiation the second main radiation wavelength is with transferring to together in a shifting process on operation substrate 7, therefore, also has the situation that produces together identical contraposition angular deflection.Taking one of them first LED epitaxial hierarchical element 22 as example, have arbitrary one be parallel to operation substrate 7 surfaces 7 " first side 25.First side 25 to each the first LED epitaxial hierarchical element 22 is made extended line, can find that all extended lines can have the first parallel extending direction 26 of essence.In the same manner, taking any second LED epitaxial hierarchical element 23 wherein as example, can there is one and correspond to the first LED epitaxial hierarchical element 22 and be parallel to operation substrate 7 surfaces 7 " first side 27.First side 27 to each the second LED epitaxial hierarchical element 23 is made extended line, can find that all extended lines have the second parallel extending direction 28 of essence.The contraposition angular deflection producing due to twice transfer is not quite similar, and therefore, the first direction 24 defining taking script is as benchmark, and the first extending direction 26 can produce angle theta with first direction 24
1, and the second extending direction 28 can produce another angle theta with first direction 24
2, and θ
1be not equal to θ
2.In the present embodiment, θ
1approximate 70 degree and θ
2approximate 90 degree.
By above explanation, can understand the transfer making method of disclosed a kind of semiconductor optoelectronic element except intactly retaining the growth substrate of semiconductor optoelectronic element, outside can reusing, and can on operation substrate, simplify technique to there is the optionally multiple semiconductor optoelectronic elements of mode single transfer unit.This mode, for developing multicolor luminous element or the making of multicolor display, has the good efficacy of saving cost and shortening the process time.
The cited each embodiment of the present invention is only in order to the present invention to be described, not in order to limit the scope of the invention.Anyone any aobvious and easy to know modification made for the present invention or change neither depart from spirit of the present invention and scope.
Claims (10)
1. a semiconductor optoelectronic element, comprising:
Operation substrate;
Semiconductor epitaxial hierarchical element, is arranged on this operation substrate, and this semiconductor epitaxial hierarchical element comprises:
Be arranged on this operation substrate, there is the first semiconductor material layer of the first conductive characteristic; With
Be arranged on this first semiconductor material layer, there is the second semiconductor material layer of the second conductive characteristic;
Transparency conducting layer, is arranged on this second semiconductor material layer, and this transparency conducting layer comprises:
First surface, has direct contact site and directly contacts with this second semiconductor material layer;
Second surface, parallel this first surface of essence, has the corresponding portion of direct contact, and this directly contacts corresponding portion with respect to this direct contact site; And
The first electrode, be arranged on this operation substrate, by this transparency conducting layer and this semiconductor epitaxial hierarchical element electrically connect, wherein this first electrode and this transparency conducting layer be by this direct contact site and the mutual electrically connect in region outside this directly contacts corresponding portion, and this first electrode is arranged on this direct contact site and this direct region contacting outside corresponding portion.
2. semiconductor optoelectronic element as claimed in claim 1, wherein this semiconductor epitaxial hierarchical element also comprises luminescent layer, is arranged between this first semiconductor material layer and this second semiconductor material layer.
3. semiconductor optoelectronic element as claimed in claim 1, also comprises the second electrode, is arranged between this operation substrate and this semiconductor epitaxial hierarchical element maybe this operation substrate with respect to the opposition side of this semiconductor epitaxial hierarchical element.
4. semiconductor optoelectronic element as claimed in claim 1, wherein the light transmittance of this transparency conducting layer is greater than 90%.
5. semiconductor optoelectronic element as claimed in claim 1, wherein this semiconductor optoelectronic element is solar cell or light-emitting diode.
6. semiconductor optoelectronic element as claimed in claim 1, wherein this electrically conducting transparent layer material is selected from the group being made up of the combination in any of tin indium oxide, cadmium tin, zinc oxide, indium oxide, tin oxide, cupric oxide aluminium, cupric oxide gallium, strontium oxide strontia copper, aluminum zinc oxide, zinc-gallium oxide and above-mentioned material.
7. semiconductor optoelectronic element as claimed in claim 1, also comprises multiple plain conductors, and this first electrode extends to this corresponding portion of direct contact of this transparency conducting layer certainly.
8. semiconductor optoelectronic element as claimed in claim 7, wherein this plain conductor has width and is less than 20 μ m, and/or the material of the plurality of plain conductor is different from this first electrode.
9. semiconductor optoelectronic element as claimed in claim 1, wherein the material of this first electrode is the single or multiple lift metal structure being made up of titanium, aluminium, gold, chromium, nickel, germanium or above-mentioned any alloy.
10. semiconductor optoelectronic element as claimed in claim 1, wherein this operation substrate also has rough surface, and this rough surface comprises at least one projection and/or at least one pothole.
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| CN108447855B (en) | 2012-11-12 | 2020-11-24 | 晶元光电股份有限公司 | Method for manufacturing semiconductor photoelectric element |
| CN104157548A (en) * | 2013-05-14 | 2014-11-19 | 北儒精密股份有限公司 | Method for manufacturing flexible light-transmitting substrate |
| TWI549170B (en) * | 2013-07-29 | 2016-09-11 | 晶元光電股份有限公司 | Method of selectively transferring semiconductor devices |
| CN107068665B (en) * | 2017-04-18 | 2019-02-05 | 天津三安光电有限公司 | Micro-led device and preparation method thereof |
| CN114678453A (en) * | 2017-09-15 | 2022-06-28 | 厦门市三安光电科技有限公司 | Miniature light-emitting diode and manufacturing method thereof |
| CN115312637B (en) * | 2022-10-11 | 2022-12-16 | 罗化芯显示科技开发(江苏)有限公司 | Micro-LED display device and manufacturing method thereof |
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