CN101465290A - 一种半导体功率器件用衬底硅片及其制造工艺 - Google Patents
一种半导体功率器件用衬底硅片及其制造工艺 Download PDFInfo
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- CN101465290A CN101465290A CNA2008102052128A CN200810205212A CN101465290A CN 101465290 A CN101465290 A CN 101465290A CN A2008102052128 A CNA2008102052128 A CN A2008102052128A CN 200810205212 A CN200810205212 A CN 200810205212A CN 101465290 A CN101465290 A CN 101465290A
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- 239000000758 substrate Substances 0.000 title claims abstract description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000005516 engineering process Methods 0.000 title description 6
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 238000011946 reduction process Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008102052128A CN101465290B (zh) | 2008-12-31 | 2008-12-31 | 一种半导体功率器件用衬底硅片及其制造工艺 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008102052128A CN101465290B (zh) | 2008-12-31 | 2008-12-31 | 一种半导体功率器件用衬底硅片及其制造工艺 |
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| Publication Number | Publication Date |
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| CN101465290A true CN101465290A (zh) | 2009-06-24 |
| CN101465290B CN101465290B (zh) | 2010-11-17 |
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| CN2008102052128A Active CN101465290B (zh) | 2008-12-31 | 2008-12-31 | 一种半导体功率器件用衬底硅片及其制造工艺 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014075633A1 (zh) * | 2012-11-16 | 2014-05-22 | 无锡华润上华半导体有限公司 | 一种压力传感器用晶片结构及该晶片结构的加工方法 |
| CN108054200A (zh) * | 2017-12-21 | 2018-05-18 | 深圳市麦思浦半导体有限公司 | 一种功率器件的衬底的制造方法和控制器 |
| CN118099198A (zh) * | 2024-04-23 | 2024-05-28 | 洛阳鸿泰半导体有限公司 | 一种适用于bjt和vdmos芯片制造的三维半导体衬底晶圆和方法 |
| CN118099198B (zh) * | 2024-04-23 | 2024-07-26 | 洛阳鸿泰半导体有限公司 | 一种适用于bjt和vdmos芯片制造的三维半导体衬底晶圆和方法 |
-
2008
- 2008-12-31 CN CN2008102052128A patent/CN101465290B/zh active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014075633A1 (zh) * | 2012-11-16 | 2014-05-22 | 无锡华润上华半导体有限公司 | 一种压力传感器用晶片结构及该晶片结构的加工方法 |
| CN108054200A (zh) * | 2017-12-21 | 2018-05-18 | 深圳市麦思浦半导体有限公司 | 一种功率器件的衬底的制造方法和控制器 |
| CN118099198A (zh) * | 2024-04-23 | 2024-05-28 | 洛阳鸿泰半导体有限公司 | 一种适用于bjt和vdmos芯片制造的三维半导体衬底晶圆和方法 |
| CN118099198B (zh) * | 2024-04-23 | 2024-07-26 | 洛阳鸿泰半导体有限公司 | 一种适用于bjt和vdmos芯片制造的三维半导体衬底晶圆和方法 |
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| Publication number | Publication date |
|---|---|
| CN101465290B (zh) | 2010-11-17 |
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Effective date of registration: 20110826 Address after: 132013 No. 99, Shenzhen street, hi tech Zone, Jilin, Jilin Patentee after: JILIN SINO-MICROELECTRONICS Co.,Ltd. Address before: 200135, room 607, golden peach mansion, 1900 Shangcheng Road, Shanghai, Pudong New Area Patentee before: Shanghai Huawei Technology Co., Ltd. |
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Application publication date: 20090624 Assignee: Shenzhen Jihua Micro Electronics Co. Ltd. Assignor: JILIN SINO-MICROELECTRONICS Co.,Ltd. Contract record no.: 2016990000372 Denomination of invention: Substrate silicon chip for semiconductor power device and manufacturing technology thereof Granted publication date: 20101117 License type: Common License Record date: 20160902 |
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