CN101428754A - Connection treatment method for carbon nano-tube and metal electrode - Google Patents
Connection treatment method for carbon nano-tube and metal electrode Download PDFInfo
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- CN101428754A CN101428754A CN 200810204376 CN200810204376A CN101428754A CN 101428754 A CN101428754 A CN 101428754A CN 200810204376 CN200810204376 CN 200810204376 CN 200810204376 A CN200810204376 A CN 200810204376A CN 101428754 A CN101428754 A CN 101428754A
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Abstract
A method for treating the connection of carbon nano tubes and metal electrodes in the nano technical field comprises the following steps: firstly, solutions of the carbon nano tubes are prepared; secondly, the solutions of the carbon nano tubes are loaded on the metal electrodes; thirdly, the carbon nano tubes are arranged by a dielectrophoresis method; and finally, the connection treatment is completed through direct-current annealing. The invention utilizes joule heat generated by direct current to be subject to annealing treatment to the contact points of the carbon nano tubes and the metal electrodes, so as to reduce the contact resistance between the carbon nano tubes and the metal electrodes. The method utilizes a constant-current power supply, and has the advantages of easy operation, simultaneous treatment on a large scale, accurate and controllable annealing time, and extremely low energy consumption.
Description
Technical field
What the present invention relates to is a kind of processing method of field of nanometer technology, specifically is the connection processing method of a kind of CNT and metal electrode.
Background technology
CNT has superior structural form and electronics property, has very important application prospect aspect the manufacturing novel nano electronic device, various is that the research of the nanometer electronic device (as field-effect transistor, thin film transistor (TFT), sensor etc.) of constructing module progressively launches with CNT, and the nano electron device of preparation shows the excellent properties that surmounts present semiconductor devices.And when preparing nano electron device with CNT for constructing module, one of key issue that exists is between CNT and the metal electrode because the greatest differences of material character, cause contact resistance very big, this has also limited the development and the practical application of carbon nanotube electronic device to a certain extent.Therefore, the contact resistance that finds a kind of suitable method to reduce CNT and metal electrode is the key that improves the carbon nano-tube electron device performance.
Find through literature search prior art, people such as J.-P.Salvetat are at " Appl Phys Lett " (Applied Physics wall bulletin) 1998, deliver on the 73:274 " contact carbon nanotubesselectively with low-ohmic contacts for four-probe electricmeasurements is " in (optionally handling CNT in the four point probe electrical measurement forms low ohm) literary composition, mention and utilize SEM that the carbon pipe is carried out the radiation of various dose with the place of metal electrode contact, reduced contact resistance.This method is by the junction concentration of local being applied energy, produce local joule heat, promote the diffusion of junction, reduce the tie point defective, improve contact point and connect, reducing resistance.But this method uses SEM that carbon pipe and metal contact are shone, and the efficient of processing is low, does not have industrial utility value substantially.
People such as Tan Miaomiao are at " functional material and device journal " 2008,14 (1): in " utilizing the CNT of annealing and the improvement of Metal Contact characteristic " literary composition of delivering on 227, utilize the method for high annealing, the electrode integral body that is connected with CNT is placed (300 ℃ of high temperature furnaces, 400 ℃) insulation a period of time, promote the atom diffusion of CNT and metal junction, reduce the tie point defective, make the gas at CNT and Metal Contact place simultaneously, physical absorption things such as steam are desorption at high temperature, CNT is contacted closely with the contact point of metal, reduce resistance.But this method places hot environment with entire device, damages miscellaneous part easily, causes entire device to lose efficacy; The nature of annealing simultaneously cools off length consuming time, and efficient is low, the energy consumption height.
Summary of the invention
The present invention is directed to the prior art above shortcomings, the connection processing method of a kind of CNT and metal electrode is provided, the Joule heat that utilizes DC current to produce carries out annealing in process to CNT and metal electrode contact point, reach the method for the contact resistance that reduces metal electrode, this method is utilized constant-current supply, and is easy to operate, can handle simultaneously in enormous quantities, annealing time is accurately controlled, and energy consumption is low.
The present invention is achieved by the following technical solutions, and the method for the invention specifically may further comprise the steps:
The first step is dissolved in SWCN in deionized water or the alcohol, prepares carbon nano-tube solution;
The concentration of described carbon nano-tube solution is 0.5 μ g/mL～2 μ g/mL;
The length of described SWCN is 10～20 μ m.
In second step, carbon nano-tube solution is loaded on metal electrode: carbon nano-tube solution 0.1～0.3mL point that will prepare drops in and is arranged between the on-chip positive and negative metal electrode;
Described substrate is meant the substrate of silicon material;
Described metal electrode is meant the metal electrode that deposits on substrate, the thickness of this metal electrode is 50～100nm, and the material of this metal electrode is a kind of among Au, Ag, Pt, Cu or the Al;
3. adopt the dielectrophoresis method CNT of arranging: the metal electrode two ends that step are loaded with carbon nano-tube solution in 2. load AC signal, load time is 15～20min, make drop evaporate in on-chip carbon nano-tube solution, this moment, CNT will be connected the electrode two ends;
The centre frequency of described AC signal is 5～10MHz, and the amplitude of AC signal is 5～8V;
4. direct current annealing: with step 3. in metal electrode after ac signal loads place the direct current annealing of carrying out 1.5～5min under the vacuum environment, dispose.
Described vacuum environment is meant that air pressure is 1 * 10
-4The vacuum environment of Pa;
Described direct current annealing is meant the contact point two ends that constant-current source loaded on positive and negative metal electrode, and this constant-current source is exported the DC current of 0.5 μ A.
Described contact point is meant the part that CNT contacts with metal electrode.
The present invention utilizes constant-current supply, easy to operate, can handle simultaneously in enormous quantities, can not destroy other devices and circuit on the broad-area electrode, annealing time is controlled, few and the CNT of energy consumption has had tangible improvement with interelectrode contact resistance, makes contact resistance reduction by 16%～36% between CNT and metal electrode.
Description of drawings
Fig. 1 is embodiment 1 schematic diagram;
Wherein: 1-substrate, 2-metal electrode, 3-CNT.
The specific embodiment
Below in conjunction with accompanying drawing embodiments of the invention are elaborated: present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Embodiment one:
The length of preparing concentration and be 0.5 μ g/mL is the SWCN aqueous solution of 10-15 μ m.Getting 0.1mL, to drip in thickness be between the Au metal electrode of 50nm; Loading centre frequency at the two ends of Au metal electrode then is 5MHz, the ac voltage signal 20min of amplitude 8V; Treating that the carbon pipe is arranged finishes, and removes AC signal.After constant-current source directly is added in Au metal electrode two ends and is adjusted to the output of 0.5 μ A, be 1 * 10 at air pressure
-4Carry out direct current annealing 3min under the vacuum environment of Pa.
Adopt accurate semiconductor parametric tester through recording, the average resistance at undressed Au metal electrode two ends is 1.2M Ω, and average resistance is 0.98M Ω after treatment.
Embodiment two:
Preparing concentration is that 0.8 μ g/mL, length are the SWCN alcoholic solution of 15-20 μ m.Getting 0.25mL and dripping in thickness is between the Pt metal electrode of 50nm; Loading centre frequency at the two ends of Pt metal electrode then is 10MHz, the ac voltage signal 20min of amplitude 5V; Treating that the carbon pipe is arranged finishes, and removes AC signal.After again constant-current source directly being added in Pt metal electrode two ends and being adjusted to the output of 0.5 μ A, be 1 * 10 at air pressure
-4Carry out direct current annealing 1.5min under the vacuum environment of Pa.
Adopt accurate semiconductor parametric tester through recording, the average resistance at undressed Pt metal electrode two ends is 0.83M Ω, and average resistance is 0.58M Ω after treatment.
Embodiment three:
The length of preparing concentration and be 1.5 μ g/mL is the SWCN aqueous solution of 15-20 μ m.Getting 0.2mL, to drip in thickness be between the Pt metal electrode of 50nm; Loading centre frequency at the two ends of Ag metal electrode then is 10MHz, the ac voltage signal 20min of amplitude 8V; Treating that the carbon pipe is arranged finishes, and removes AC signal.After again constant-current source directly being added in Pt metal electrode two ends and being adjusted to the output of 0.5 μ A, be 1 * 10 at air pressure
-4Carry out direct current annealing 3min under the vacuum environment of Pa.
Adopt accurate semiconductor parametric tester through recording, the average resistance at undressed Ag metal electrode two ends is 0.95M Ω, and average resistance is 0.72M Ω after treatment.
Embodiment four:
The length of preparing concentration and be 1 μ g/mL is the SWCN alcoholic solution of 10-20 μ m.Getting 0.3mL, to drip in thickness be between the Pt metal electrode of 50nm; Loading centre frequency at the two ends of Cu metal electrode then is 10MHz, the ac voltage signal 10min of amplitude 5V; Treating that the carbon pipe is arranged finishes, and removes AC signal.After again constant-current source directly being added in Pt metal electrode two ends and being adjusted to the output of 0.5 μ A, be 1 * 10 at air pressure
-4Carry out direct current annealing 5min under the vacuum environment of Pa.
Adopt accurate semiconductor parametric tester through recording, the average resistance at undressed Cu metal electrode two ends is 1.18M Ω, and average resistance is 0.94M Ω after treatment.
Embodiment five:
The length of preparing concentration and be 2 μ g/mL is the SWCN alcoholic solution of 15-20 μ m.Getting 0.2mL, to drip in thickness be between the Al metal electrode of 100nm; Loading centre frequency at the two ends of Al metal electrode then is 8MHz, the ac voltage signal 15min of amplitude 5V; Treating that the carbon pipe is arranged finishes, and removes AC signal.After again constant-current source directly being added Al metal electrode two ends and being adjusted to the output of 0.5 μ A, be 1 * 10 at air pressure
-4Carry out direct current annealing 2min under the vacuum environment of Pa.
Adopt accurate semiconductor parametric tester through recording, the average resistance at undressed Al metal electrode two ends is 1.62M Ω, and average resistance is 1.05M Ω after treatment.
Claims (10)
1, the connection processing method of a kind of CNT and metal electrode is characterized in that, may further comprise the steps:
The first step is dissolved in SWCN in deionized water or the alcohol, prepares carbon nano-tube solution;
In second step, carbon nano-tube solution is loaded on metal electrode;
In the 3rd step, adopt the dielectrophoresis method CNT of arranging;
In the 4th step, finish processing by direct current annealing.
2, the connection processing method of CNT according to claim 1 and metal electrode is characterized in that, described carbon nano-tube solution, its concentration are 0.5 μ g/mL～2 μ g/mL.
3, the connection processing method of CNT according to claim 1 and metal electrode is characterized in that, the length of described SWCN is 10～20 μ m.
4, the connection processing method of CNT according to claim 1 and metal electrode, it is characterized in that, described carbon nano-tube solution is loaded on metal electrode, specifically be meant: carbon nano-tube solution 0.1～0.3mL point that will prepare drops between the on-chip positive and negative metal electrode.
5, the connection processing method of CNT according to claim 4 and metal electrode, it is characterized in that, described metal electrode is meant the metal electrode that deposits on substrate, the thickness of this metal electrode is 50～100nm, and the material of this metal electrode is a kind of among Au, Ag, Pt, Cu or the Al.
6, according to the connection processing method of claim 4 or 5 described CNTs and metal electrode, it is characterized in that described substrate is meant the substrate of silicon material.
7, the connection processing method of CNT according to claim 1 and metal electrode, it is characterized in that, the described employing dielectrophoresis method CNT of arranging specifically is that the metal electrode two ends that will load carbon nano-tube solution load AC signal, and the load time is 15～20min.
8, the connection processing method of CNT according to claim 7 and metal electrode is characterized in that, the centre frequency of described AC signal is 5～10MHz, and the amplitude of AC signal is 5～8V.
9, the connection processing method of CNT according to claim 1 and metal electrode, it is characterized in that, described direct current annealing specifically is meant metal electrode is placed vacuum environment, and constant-current source is loaded on the contact point two ends of positive and negative metal electrode and continues 1.5～5min.
10, the connection processing method of CNT according to claim 9 and metal electrode is characterized in that, described vacuum environment is meant that air pressure is 1 * 10
-4The vacuum environment of Pa, described constant-current source is exported the DC current of 0.5 μ A.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115029A (en) * | 2009-12-31 | 2011-07-06 | 华中科技大学 | Large-scale welding method for carbon nano tube devices |
| CN103586590A (en) * | 2013-11-12 | 2014-02-19 | 温州大学 | Nanometer welding method based on joule heat |
| CN104377458A (en) * | 2014-01-17 | 2015-02-25 | 江西理工大学 | Method for connecting carbon nanometer tube macroscopic material with metal |
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2008
- 2008-12-11 CN CN 200810204376 patent/CN101428754A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102115029A (en) * | 2009-12-31 | 2011-07-06 | 华中科技大学 | Large-scale welding method for carbon nano tube devices |
| CN103586590A (en) * | 2013-11-12 | 2014-02-19 | 温州大学 | Nanometer welding method based on joule heat |
| CN104377458A (en) * | 2014-01-17 | 2015-02-25 | 江西理工大学 | Method for connecting carbon nanometer tube macroscopic material with metal |
| CN104377458B (en) * | 2014-01-17 | 2016-08-17 | 江西理工大学 | A kind of method that carbon nano-tube macroscopic material is connected with metal |
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