CN101383258A - Construction of surface conductive field emission electronic source conductive film - Google Patents
Construction of surface conductive field emission electronic source conductive film Download PDFInfo
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- CN101383258A CN101383258A CNA2008102318437A CN200810231843A CN101383258A CN 101383258 A CN101383258 A CN 101383258A CN A2008102318437 A CNA2008102318437 A CN A2008102318437A CN 200810231843 A CN200810231843 A CN 200810231843A CN 101383258 A CN101383258 A CN 101383258A
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Abstract
The invention discloses a conducting film structure of a surface conduction field emission electron source, namely, a conducting film of an electron source is formed by a multilayer composite film which is formed by a palladium oxide film (PdO) and an amorphous carbon film, the electron transmitting performance of the conducting film can be improved by using the good electron emission stability of the palladium oxide film and the lower effective work function, the large carrier mobility, the high breakdown voltage, the wide forbidden bandwidth and the high heat conduction coefficient of the amorphous carbon film, and consequently, the emission current density and the electron emissivity of the field emission electron source are increased.
Description
Technical field
The invention belongs to flat-panel display device and make the field, relate to a kind of structure of electron emission source, particularly a kind of film layer structure that can be used for the surface-conduction electron emission source conducting film of field emission display.
Background technology
(Surface-conduction Electron-emitter Display SED) is a kind of advanced person's of getting up of new development in recent years flat-panel display device to surface-conduction-electron emission display.No matter at aspects such as contrast, gray scale, color and dynamic image display qualities, still aspect power consumption and thickness, SED is better than the LCD (LCD) and the plasma scope (PDP) of present main flow, is considered to the follow-on flat-panel display device after LCD and PDP.
SED is a kind of high vacuum display device, forms a hermetically-sealed construction by front glass substrate, back glass substrate and seal, sealing materials frame on every side, and inside is high vacuum.SED can be divided into two parts, i.e. positive plate and minus plate on the whole.
The SED positive plate is made up of glass plate, black matrix, filter coating, fluorescent material and metal film.Wherein, three look filter coatings are corresponding R, G, B three primary colors fluorescent powder respectively, in order to improve colorimetric purity.Fluorescent material deposits at interval with the form of vitta, between the vitta with black matrix at interval to avoid interference, can also reduce outside reflection of light simultaneously, improve contrast.Metal film is positioned at the surface of phosphor powder layer, is the very thin metallic film of one deck, is used for as anode.
The major part of SED minus plate is the SED electron source, comprises glass plate, column electrode (scan electrode), row electrode (modulator electrode) and surface conductive electron emitting cathode (SCE).SCE is the part that the SED electron source carries out the electronics emission, and its number is very big, and size is small.Typical SCE structure comprises the electron-emitting area on device electrode, conducting film and the conducting film.Two relative device electrodes are used for being electrically connected between conducting film and column electrode or the row electrode, and thickness is between tens nanometers are to several microns, and spacing distance is between several microns to tens microns.The conducting film two ends closely are connected with device electrode, are the key components of SCE, and its very thin thickness has only several nanometers.
Surface conductive electronics emission phenomenon is found in early 1960s by The former Russian scholar Elinson MI the earliest, belongs to thin film field emission phenomenon.At first at two deposition one deck SnO as thin as a wafer in the gap of the parallel pole of 10 μ m
2Film, film are discontinuous graininess, have some conducting bridges between the particle.Then under vacuum condition, between two electrodes, apply voltage and progressively burn conducting bridge between the particle, thereby form the SnO in nanometer scale gap, space
2Isolated island.When between electrode, applying voltage afterwards, form highfield between the isolated island, produce field emission, arrive next isolated island, realized the electron surface conduction, formed conduction current from an isolated island electrons emitted.If anode is set above parallel pole, then the part conduction electron arrives anode under the traction of anode voltage, forms emission current, has promptly realized the emission of surface conductive electronics.The ratio of definition emission current and conduction current is electron emissivity, SnO
2The emissivity of film surface conduction electron emission can reach 5%～10%, but the emission current instability reaches 10%, can't be applied to show.
People such as after this, 1975 Hartwell M and Fonstad C G utilize In
2O
3/ SnO
2Film, the Blessing R and the Pagnia H of Germany in 1978 utilize the Au film, carry out the experiment of noncontinuity film surface conduction electron emission aspect respectively, and the various phenomenons of his-and-hers watches surface conduction electron emission are analyzed and are studied.But the electron emissivity of these discontinuous films is generally lower, and mostly about 0.1%, though some can access higher emissivity, but the uniformity of its electronics emission and stability are poor, do not reach practical requirement.
CANON adopts special process to realize continuous film nanometer slit negative electrode through the years of researches exploitation, has obtained uniform and stable electronics emission.Its way is: at first use inkjet printing technology (ink-jetprocess) will contain the solution " printing " of palladium (Pd) compound on each sub-pixel, be on the right gap of device electrode, remove organic matter through roasting, the compound that contains Pd promptly is transformed into the PdO ultrafine particle, forms PdO ultrafine particle film.Then film is carried out the slit that " adding electric forming " technology (electro-forming process) obtains submicron order, depositing carbon film reduces gap width on the slit by " activation technology " (activation process) again, finally obtains the nanoscale slit.Canon Inc. is with this negative electrode called after surface conductive electron emitting cathode, and the display called after surface conductive electron emitting-type display that will adopt this negative electrode to make.Canon has put on display 10 in2s, 40 * 240 pixel SED model machines in SID meeting in 1997.
During based on the SED of PdO conducting film work, apply one tens volts voltage on the device electrode of minus plate, it is strong then to produce high field at the place, crack of conducting film, because tunnel effect, the tunnelling electronics flies to the other end from an end in crack, thereby produces the surface conductive electric current.Can attract a part of impact fluorescence powder in the electronics of cathode emission luminous after on the anode of positive plate, applying high pressure.
The advantage of making the SED of conducting film with palladium oxide is that the electronics launch stability is good, but shortcoming is that emission and electron emissivity are lower, causes SED brightness not high.
Summary of the invention
The object of the present invention is to provide a kind of structure of surface conductive field emission electronic source conductive film, it can improve the current emission density of electron source, increases electron emissivity.
Basic design of the present invention is: the multilayer complex films that the conducting film of SED adopts palladium oxide film and amorphous carbon-film to constitute.The electron emission capability of palladium oxide film is stable, but emission is lower.And the amorphous carbon film has following advantage as the cathodic field emissive material: (1) has negative or extremely low electron affinity, lower effective work function, makes the easier emission of electronics, and an emission threshold threshold voltage is low, and emission is big; (2) coefficient of heat conduction is big, the fusing point height, and chemical stability is good; (3) carrier mobility height, breakdown field is powerful, has guaranteed high response speed and big emission current.But the electronics launch stability of amorphous carbon-film is relatively poor.Utilize palladium oxide film to combine with amorphous carbon-film, can when guaranteeing the electronic stability emission, obtain high emission and electron emissivity, thereby improve the emitting performance of electron source as the conducting film of surface conductive field emitting electronic source.
In order to realize above-mentioned task, the present invention adopts following technical solution:
The multilayer complex films that a kind of structure of surface conductive field emission electronic source conductive film, conducting film adopt PdO film and amorphous carbon-film to constitute.
The manufacturing process of described conducting film is made amorphous carbon-film thereon then at first make the PdO film on base material, thereby constitutes PdO-amorphous carbon-film double-layer structure conducting film.
The manufacturing process of described conducting film is made the PdO film thereon then at first make amorphous carbon-film on base material, thereby constitutes amorphous carbon-PdO double-layer structure conducting film.
The manufacturing process of described conducting film is made amorphous carbon-film thereon then at first make the PdO film on base material, makes the PdO film again on amorphous carbon-film, thereby constitutes PdO-amorphous carbon-PdO three-decker conducting film.
The manufacturing process of described conducting film is made the PdO film thereon then at first make amorphous carbon-film on base material, makes amorphous carbon-film again on the PdO film, thereby constitutes amorphous carbon-PdO-amorphous carbon three-decker conducting film.
In the technique scheme, described palladium oxide film can adopt methods such as magnetron sputtering, radio frequency sputtering or vacuum electronic beam evaporation to make, but methods such as the chemical vapour deposition (CVD) of amorphous carbon-film using plasma, ion beam depositing, ion beam assisted depositing, radio frequency sputtering, magnetron sputtering, vacuum cathode arc deposited, high strength direct current electric arc or pulse vacuum arc ion deposition are made.Can adopt photoetching process that conducting film is processed into needed figure, and form slit between the conducting film with " adding electric forming " technology.
Because the multilayer complex films that has adopted PdO and amorphous carbon formation is as conducting film, when therefore applying one tens volts voltage on the device electrode of electron source minus plate, the film of two kinds of materials has participated in the field emission of electronics simultaneously.The electron emission capability of this composite conductive film combines the advantage that the emission of PdO film electronics is stable and amorphous carbon-film electronics emission threshold threshold voltage is low, carrier mobility is high and emission is big.Experiment shows that compared with prior art, the structure of surface conductive field emission electronic source conductive film of the present invention can improve the emission and the electron emissivity of field emitting electronic source.
Description of drawings
Fig. 1 is a kind of typical structure schematic diagram of the surface conductive field emission electronic source conductive film of prior art;
Wherein, figure a is a front view, and figure b is a vertical view;
Fig. 2 is the structural representation of the surface conductive field emission electronic source conductive film of first kind of example of the present invention;
Fig. 3 is the structural representation of the surface conductive field emission electronic source conductive film of second kind of example of the present invention;
Fig. 4 is the structural representation of the surface conductive field emission electronic source conductive film of the third example of the present invention;
Fig. 5 is the structural representation of the surface conductive field emission electronic source conductive film of the 4th kind of example of the present invention.
Among the above figure, 1, be base material, be generally glass substrate, 2, be device electrode, 3, be palladium oxide PdO film, 4, be amorphous carbon-film, 5, be the slit between conducting film.
Below in conjunction with accompanying drawing content of the present invention is described in further detail.
Embodiment
With reference to shown in Figure 1, the manufacturing process of conducting film is for making PdO film 3 on the glass substrate 1 that has device electrode 2 parts such as grade, so conducting film adopts is the monolayer material film, then film carried out " adding electric forming " technology and obtains slit 5.
With reference to shown in Figure 2, the manufacturing process of conducting film is at first making palladium oxide PdO film 3 on the glass substrate 1 that has device electrode 2 parts such as grade, make amorphous carbon-film 4 then thereon, thereby constitute PdO-amorphous carbon double-layer structure conducting film, at last film is carried out " adding electric forming " technology and obtain slit 5.
With reference to shown in Figure 3, the manufacturing process of conducting film is at first making amorphous carbon-film 4 on the glass substrate 1 that has device electrode 2 parts such as grade, make palladium oxide PdO film 3 then thereon, thereby constitute amorphous carbon-PdO double-layer structure conducting film, at last film is carried out " adding electric forming " technology and obtain slit 5.
With reference to shown in Figure 4, the manufacturing process of conducting film is at first making palladium oxide PdO film 3 on the glass substrate 1 that has device electrode 2 parts such as grade, make amorphous carbon-film 4 then thereon, on amorphous carbon-film, make palladium oxide PdO film 3 again, thereby constitute PdO-amorphous carbon-PdO three-decker conducting film, at last film is carried out " adding electric forming " technology and obtain slit 5.
With reference to shown in Figure 5, the manufacturing process of conducting film is at first making amorphous carbon-film 4 on the glass substrate 1 that has device electrode 2 parts such as grade, make palladium oxide PdO film 3 then thereon, on palladium oxide PdO film 3, make amorphous carbon-film 4 again, thereby constitute amorphous carbon-PdO-amorphous carbon three-decker conducting film, at last film is carried out " adding electric forming " technology and obtain slit 5.
The multilayer complex films that adopts palladium oxide PdO film 3 and amorphous carbon-film 4 formations is as conducting film, all be exposed to the electronics emission space at its two kinds of materials in 5 places, crack, when therefore applying one tens volts voltage on the device electrode 2 of electron source minus plate, the palladium oxide film 3 of two kinds of materials and amorphous carbon-film 4 have participated in the field emission of electronics simultaneously.The electron emission capability of this composite conductive film combines stable and amorphous carbon-film 4 advantage that electronics emission threshold threshold voltage is low, carrier mobility is high and emission is big of palladium oxide PdO film 3 electronics emission.Experimental result shows, compare with the structure of existing surface conductive field emission electronic source conductive film, utilize palladium oxide PdO film 3 to combine, can obtain the electronics emission of stable high current density and high electron emissivity, thereby improve the emitting performance of electron source with amorphous carbon-film 4.
Though the present invention has made detailed description with above-mentioned preferred embodiment to the present invention, be not to limit the present invention with the foregoing description.The film layer structure of surface conductive field emission electronic source conductive film of the present invention is not limited to above-mentioned several form; so long as according to technical scheme of the present invention; the multilayer film that adopts palladium oxide and amorphous carbon to constitute; to reach the purpose that improves the electron source electron emission capability, all belong to protection scope of the present invention.
Claims (5)
1. the film layer structure of a surface conductive field emission electronic source conductive film comprises conducting film, it is characterized in that, conducting film adopts the multilayer complex films that is made of palladium oxide PdO film (3) and amorphous carbon-film (4).
2. the film layer structure of surface conductive field emission electronic source conductive film according to claim 1, it is characterized in that, conducting film is included in the PdO film (3) on the base material, goes up at PdO film (3) then and makes amorphous carbon-film (4), constitutes the conducting film of PdO-amorphous carbon double-layer structure.
3. the film layer structure of surface conductive field emission electronic source conductive film according to claim 1, it is characterized in that, conducting film is included in the amorphous carbon-film (4) on the base material, goes up at amorphous carbon-film (4) then and makes PdO film (3), constitutes the conducting film of amorphous carbon-PdO double-layer structure.
4. the film layer structure of surface conductive field emission electronic source conductive film according to claim 1, it is characterized in that, conducting film is included in the PdO film (3) on the base material, go up at PdO film (3) then and make amorphous carbon-film (4), go up at amorphous carbon-film (4) again and make PdO film (3), constitute the conducting film of PdO-amorphous carbon-PdO three-decker.
5. the film layer structure of surface conductive field emission electronic source conductive film according to claim 1, it is characterized in that, conducting film is included in the amorphous carbon-film (4) on the base material, go up at amorphous carbon-film (4) then and make PdO film (3), go up at PdO film (3) again and make amorphous carbon-film (4), constitute the conducting film of amorphous carbon-PdO-amorphous carbon three-decker.
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| CN2008102318437A CN101383258B (en) | 2008-10-22 | 2008-10-22 | Construction of surface conductive field emission electronic source conductive film |
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| CN2008102318437A CN101383258B (en) | 2008-10-22 | 2008-10-22 | Construction of surface conductive field emission electronic source conductive film |
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| CN101383258A true CN101383258A (en) | 2009-03-11 |
| CN101383258B CN101383258B (en) | 2010-11-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461368A (en) * | 2018-01-24 | 2018-08-28 | 西安交通大学 | A kind of ZnO/PdO composite surfaces conduction electron emissive film and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461368A (en) * | 2018-01-24 | 2018-08-28 | 西安交通大学 | A kind of ZnO/PdO composite surfaces conduction electron emissive film and preparation method thereof |
| CN108461368B (en) * | 2018-01-24 | 2020-04-28 | 西安交通大学 | ZnO/PdO composite surface conduction electron emission film and preparation method thereof |
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| CN101383258B (en) | 2010-11-10 |
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