US20060249388A1 - Electrophoretic deposition method for a field emission device - Google Patents
Electrophoretic deposition method for a field emission device Download PDFInfo
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- US20060249388A1 US20060249388A1 US11/121,712 US12171205A US2006249388A1 US 20060249388 A1 US20060249388 A1 US 20060249388A1 US 12171205 A US12171205 A US 12171205A US 2006249388 A1 US2006249388 A1 US 2006249388A1
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- 238000001652 electrophoretic deposition Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000002086 nanomaterial Substances 0.000 claims abstract description 33
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 25
- 238000001962 electrophoresis Methods 0.000 claims abstract description 17
- 230000005684 electric field Effects 0.000 claims abstract description 11
- 239000000725 suspension Substances 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 25
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 24
- 239000002070 nanowire Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 4
- 239000002071 nanotube Substances 0.000 claims description 4
- 239000011852 carbon nanoparticle Substances 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000002245 particle Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 1-ethylhexyl Chemical group 0.000 description 1
- NNKSRGUMPLVLGD-UHFFFAOYSA-N 2-[[2-(2-ethylbutoxy)-2,2-diphenylacetyl]-methylamino]ethyl-dimethylazanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1C(C(=O)N(C)CC[NH+](C)C)(OCC(CC)CC)C1=CC=CC=C1 NNKSRGUMPLVLGD-UHFFFAOYSA-N 0.000 description 1
- 229910020854 La(OH)3 Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229960000686 benzalkonium chloride Drugs 0.000 description 1
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- JMGZBMRVDHKMKB-UHFFFAOYSA-L disodium;2-sulfobutanedioate Chemical compound [Na+].[Na+].OS(=O)(=O)C(C([O-])=O)CC([O-])=O JMGZBMRVDHKMKB-UHFFFAOYSA-L 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910001679 gibbsite Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Inorganic materials [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
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-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/02—Electrophoretic coating characterised by the process with inorganic material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D13/00—Electrophoretic coating characterised by the process
- C25D13/12—Electrophoretic coating characterised by the process characterised by the article coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Definitions
- the present invention generally relates to electrophoretic deposition (EPD) of carbon nanotube (CNT), and more specifically to an electrophoretic deposition method for a field emission device.
- EPD electrophoretic deposition
- CNT carbon nanotube
- liquid crystal display LCD
- field emitters as electron emitters for field emission displays (FEDs) is expected to increase dramatically in future generation flat displays.
- CTRs cathode ray tubes
- cold cathode emitter tips are used as the electron source in FEDs.
- cold cathode emitter tips aim at the phosphor-coated anode substrate and emit a bundle of electrons.
- the emitted electrons are accelerated by the positive voltage applied to the anode substrate, and then hit the coated phosphor on the anode to produce luminescence.
- Some conventional cathode plates of field emission displays are fabricated by a screen printing method.
- the drawbacks of the method are poor resolution because of the limitation of the size of the screen mesh and non-uniform film thickness due to non-uniform tension of the screen.
- the non-uniform film thickness may lead to alignment problem at subsequent processes.
- Other conventional field emitters are formed with conic tips produced by a spindt technique. The above method usually results in a high turn on voltage and/or a short lifetime of the emitter tips.
- CNT field emitters have been proposed.
- the CNT field emitters have far superior electron field emission characteristics, such as lower turn on voltage and larger emission current density, to any conventional field emission devices.
- formation of CNTs field emitters has been hindered by difficulties encountered in the processing of such materials.
- the CNTs are usually fabricated by laser ablation or arc discharge or electrochemical deposition.
- a post-formation method, such as screen printing and spraying, must be utilized to deposit pre-formed CNTs on a field emission substrate. Both screen printing and spraying suffer poor resolution and poor uniformity problems, and are not practical for large-scale fabrication.
- CNTs can be grown directly on the field emission substrate by use of chemical vapor deposition (CVD) techniques, such techniques require relatively high temperatures and reactive environments in order to effectively grow the CNTs.
- CVD chemical vapor deposition
- the harsh environmental conditions severely limit the substrate materials which can be utilized during the CVD, and thus make the technique non-practical.
- CNT field emitters manufactured by photosensitive paste or EPD have been disclosed to solve the above-described problems.
- the method described by Hua-Chi Cheng et al in U.S. Pat. No. 6,811,457 uses a photosensitive paste and etchable dielectric material to fabricate the cathode plate of a CNT FED.
- the EPD method offers many advantages, such as simple process, low cost, low temperature, and feasibility of large panel production.
- a conventional EPD of CNT particles to form CNT field emitters was proposed by Won-bong Choi et al in U.S. Pat. No. 6,616,497 and by Otto Z. Zhou et al in US Publication 2003/0102222. In the conventional method shown in FIG.
- a bias voltage from a power supply 101 was applied between two separate electrodes (anode plate 102 and cathode plate 103 ) immersed in an electrophoresis bath 104 containing CNT suspension 105 to selectively deposit CNT particles 106 on the surface of the cathodes 107 exposed through the gate holes 108 of the dielectric film 109 .
- the cathode plate 103 comprises a substrate 110 , a dielectric film 109 , a plurality of cathodes 107 , a plurality of gates 111 , and CNT particles 106 .
- one dimensional nanostructure materials (such as nanotubes, nanorods and linear polymers) are easily polarized along their longitudinal axis forming polarized dipoles, and these polarized dipoles can drift along the direction of the dielectrophorectic force.
- Additives can be added to the electrophoresis bath to charge the nanostructure materials (e.g., CNT particles) and to facilitate electrophoretic deposition.
- the nanostructure materials charged by positive ions in the nanostructure suspension drift along the direction of the electrical force created by the voltage difference between the electrodes.
- the drawback of the method is that the selectivity of the deposition may not good enough to prevent the top area or sidewall of the gate 111 from CNT particle deposition. This sidewall deposition will result in an electrical short circuit between gate 111 and cathode 107 .
- One way to solve the above problem is to use a masked sacrificial layer (e.g., photoresist) protecting or covering the gate 111 during the deposition process.
- the sacrificial layer and the CNT particles on the top and sidewall of the gate 111 are removed after EPD. This method requires an additional photolithographic process and thus complicates the manufacturing process and increases the manufacturing cost.
- the electrophoretic deposition method of the present invention uses a triode structure having gates and a proper arrangement of applied voltages to improve the selectivity of the conventional EPD method.
- the electrophoretic deposition method for a field field emission device comprises the following steps: (a) preparing an electrophoresis bath containing nanostructure suspension, (b) preparing a field emitter plate with a triode structure having gates, wherein the field emitter plate acts as a cathode plate and comprises a substrate, plural cathodes on the substrate, a dielectric film on the substrate and the cathodes, and plural gates on the dielectric film and the substrate, (c) immersing an anode plate and the field emitter plate in the electrophoresis bath, and (d) applying two different bias voltages for a certain period of time to said gates and said cathodes, respectively, to selectively deposit nanostructure materials on the surfaces of said cathodes exposed through the gate holes of the dielectric film.
- a positive voltage is applied to the gates and a negative voltage is applied to the cathodes while the anode plate is kept at a common voltage.
- a bias voltage is applied between the gates and the cathodes during a selective electrophoretic deposition.
- the electrophoretic deposition method for a field emission device comprises the same steps of (a) and (b), and two following different steps.
- this second embodiment immerses the field emitter plate in the electrophoresis bath, then applies a bias voltage between the gates and the cathodes for a certain period of time to selectively deposit nanostructure materials on the surfaces of said cathodes exposed through the gate holes of the dielectric film.
- the electrophoretic deposition method for a field emission device of the present invention not only has the advantages offered by the conventional EPD method but also provides a better selectivity of deposition than the conventional EPD method. It is performed at low temperature and does not require a masked sacrificial layer, and therefore keeps the manufacturing process simple and the cost down.
- FIG. 1 is a schematic view illustrating a CNT field emitter formed by a conventional electrophoretic deposition.
- FIGS. 2 a - 2 d illustrate the steps of an electrophoretic deposition method for a field emission device according to a first embodiment of the present invention.
- FIG. 3 is a schematic drawing of electrical field distribution in the electrophoresis bath shown in FIG. 2 .
- FIG. 4 a shows a magnified schematic top view of the cross-type cathode plate of a field emitter before a selective EPD according to the present invention.
- FIG. 4 b shows a magnified schematic top view of the cross-type cathode plate of a field emitter after a selective EPD according to the present invention.
- FIG. 4 c shows a magnified schematic top view of the parallel-type cathode plate of a field emitter before a selective EPD according to the present invention.
- FIG. 4 d shows a magnified schematic top view of the parallel-type cathode plate of a field emitter after a selective EPD according to the present invention.
- FIG. 5 is a plot of the measured electron field emission current versus the applied voltage from a CNT field emitter according to the present invention.
- FIGS. 6 a - 6 b illustrate the steps of an electrophoretic deposition method for a field emission device according to another embodiment of the present invention.
- the present invention combines thick-film printing technique and photolithographic technology to construct a triode structure having gates for electrophoretic deposition. Then, the arrangement of applied voltages during the electrophoretic deposition and the solution in the electrophoresis bath are properly chosen to deposit nanostructure materials on the selective area of a substrate.
- the substrate can be a field emission substrate used as a field emitter in an FED device.
- the solution in the electrophoresis bath contains a solution base and additives.
- Deionized (DI) water or acetone or isopropyl alcohol (IPA) can be used as the solution base.
- IPA isopropyl alcohol
- additives have been proposed in the literature. These additives include Benzalkonium Chloride, Mg(NO 3 ) 2 6H 2 O, AOT (bis(1-ethylhexyl) sodium sulfosuccinate), Tritron X-100, Na 2 CO 3 and nitrate with Mg(OH) 2 or Al(OH) 3 or La(OH) 3 .
- Either direct current (DC) or alternating current (AC) power supplies can be utilized.
- the cathode plate was immersed in the Tritron solution for about 10 minutes before EPD to enhance the adhesion of nanostructure materials (e.g., CNT particles) on the surface of the cathode.
- 1 ppm Na 2 CO 3 was chosen as the additive to a DI water solution with 50 ppm of CNTs to improve the electrophoretic efficiency.
- the conductivity of the solution increased from 0.444 ms/m to 0.702 ms/m.
- EPD temperature was maintained at about 50 Celsius degrees.
- FIGS. 2 a - 2 d illustrate the steps of an electrophoretic deposition method for a field emission device according to a first embodiment of the present invention.
- an electrophoresis bath 203 containing nanostructure suspension 204 is first prepared, as shown in FIG. 2a .
- a field emitter plate 202 with a triode structure having gates 206 is provided.
- the field emitter plate 202 acts as a cathode plate and includes a substrate 212 , plural cathodes 208 on the substrate 212 , a dielectric film 211 on the substrate 212 and the cathodes 208 , and plural gates 206 on the dielectric film 211 and the substrate 212 , as illustrated in FIG. 2b .
- the electrophoretic deposition method applies a bias voltage V 1 from a power supply 205 to the gates 206 and a bias voltage V 2 from a power supply 207 to the cathodes 208 for a certain period of time to selectively deposit nanostructure materials 209 on the surfaces of the cathodes 208 exposed through the gate holes 210 of the dielectric film 211 .
- the anode plate 201 is electrically connected to the other two terminals of the power supplies 205 and 207 , and is kept at a common voltage V 0 .
- the nanostructure materials may include nanotubes, nanowires, nanoparticles, carbon nanotubes, carbon nanowires, and carbon nanoparticles.
- the dimension of the gate holes 210 used in the embodiment was around 80 ⁇ m and the thickness of the dielectric film 211 was about 25 ⁇ m.
- the anode plate 201 was made of a mesh structure in order to homogenize the electrical field distribution.
- FIG. 3 is a schematic drawing of electrical field distribution in the electrophoresis bath shown in FIGS. 2 a - 2 d.
- the charged or polarized nanostructure materials drift along the electrical lines and then deposit on the cathode plates.
- the electrical field near the anode plates repels the charged or polarized nanostructure materials and thus prevents them from adhering to the anodes.
- the bias voltage V 1 is usually, but not limited to, a positive voltage with respect to the common voltage V 0 .
- the bias voltage V 2 is usually, but not limited to, a negative voltage with respect to the common voltage V 0 .
- the charged or polarized nanostructure suspension 204 is pulled through the gate holes 210 by the electrical force from the negative cathode voltage V 2 , and drifts toward the cathodes 208 and then deposits onto the surfaces of the cathodes 208 .
- the positive gate voltage VI repels the charged or polarized nanostructure suspension 204 and prevents the nanostructure materials from depositing in the neighborhood of the gates 206 . Therefore, the nanostructure materials 209 are selectively deposited on the cathodes 208 . Therefore, an electrical short circuit between the gates 206 and the cathodes 208 can be avoided.
- FIGS. 4 a and 4 b show a magnified schematic top view of the cross-type cathode plate of a field emitter before and after the electrophoretic deposition method according to the present invention, respectively.
- Vertical electrode lines are cathode lines 401
- horizontal electrode lines are gate lines 402 .
- the substance between gate lines and cathode lines is a dielectric layer.
- a scanning electron microscope (SEM) image (not shown) of the deposited CNT particles in a gate hole on a cathode shown in FIG. 4 b was observed.
- FIGS. 4 c and 4 d show a magnified schematic top view of the parallel-type cathode plate of a field emitter before and after the electrophoretic deposition method according to the present invention, respectively.
- FIG. 5 is a plot of the measured electron field emission current versus the applied voltage from a CNT field emitter according to the present invention. Referring to FIG. 5 , the turn-on electric field intensity was as low as 4.5 volt/micron, while current density reached 3.5 mA/Vcm 2 at 9.5 volt/volt/micron. FIGS. 4 a, 4 b, and 5 confirm that a good selectivity of electrophoretic deposition and a good field emission property of CNT field emitter have been achieved by the electrophoretic deposition method for a field emission device according to the present invention.
- a bias voltage is applied between the gates and the cathodes during a selective electrophoretic deposition.
- the electrophoretic deposition method for a field emission device according to the second embodiment comprises the same steps illustrated in FIG. 2a and FIG. 2b , and two following different steps.
- FIG. 6 a and FIG. 6 b illustrate the two different steps, respectively.
- the electrophoretic deposition method for a field emission device according to the second embodiment immerses the field emitter plate 202 in the electrophoresis bath 203 , as shown in FIG. 6 a.
- a bias voltage V 2 from a power supply 604 for a certain period of time between the gates 206 and the cathodes 208 to selectively deposit nanostructure materials 209 on the surfaces of the cathodes 208 exposed through the gate holes 608 of the dielectric film 211 .
- the other terminal of the power supply 604 which is held at a voltate of V 0 , is electrically connected to the gates 206 . This is illustrated as FIG. 6 b.
- the bias voltage V 2 is usually, but not limited to, a negative voltage with respect to the common voltage V 0 .
- the charged or polarized nanostructure suspension 204 is pulled through the gate holes 608 by the electric field formed by the potential difference between the gates 206 and the cathodes 208 , and drifts toward the cathodes 208 and then deposits onto the surfaces of the cathodes 208 .
- the electric field around the gates 206 repels the charged or polarized nanostructure suspension 204 and prevents the charged or polarized nanostructure materials 204 from depositing in the neighborhood of the gates 206 . Therefore, the nanostructure materials 209 are selectively deposited on the cathodes 208 . An electrical short circuit between the gates 206 and the cathodes 208 can be avoided.
- the present invention provides an electrophoretic deposition method for a field emission device through the use of selective electrophoretic deposition on the cathodes of a triode having gates. It resolves the problem of electrical short circuit between the gates and the cathodes through improvement of the EPD selectivity. In addition, it is performed at low temperature and does not require a masked sacrificial layer, and therefore keeps the manufacturing process simple and the cost down.
Abstract
The invention provides an electrophoretic deposition method of CNTs for a field emission device. It uses a triode structure having gates and a proper arrangement of applied voltages to improve the selectivity of the conventional EPD method. The electric field around the gates repels the charged or polarized nanostructure suspension in the electrophoresis bath and prevents the charged or polarized nanostructure materials from depositing in the neighborhood of the gates. Therefore, the nanostructure materials are selectively deposited on the cathode. An electrical short circuit between the gates and the cathodes can be avoided. It does not require a masked sacrificial layer, and therefore keeps the manufacturing process simple and the cost down.
Description
- The present invention generally relates to electrophoretic deposition (EPD) of carbon nanotube (CNT), and more specifically to an electrophoretic deposition method for a field emission device.
- Nowadays, liquid crystal display (LCD) has almost become the most popular display devices. However, many researches on different kinds of display technologies are still being pursued. The use of field emitters as electron emitters for field emission displays (FEDs) is expected to increase dramatically in future generation flat displays. Unlike conventional cathode ray tubes (CRTs) that use a hot cathode electron gun, cold cathode emitter tips are used as the electron source in FEDs. When an FED device is placed in an electric field, cold cathode emitter tips aim at the phosphor-coated anode substrate and emit a bundle of electrons. The emitted electrons are accelerated by the positive voltage applied to the anode substrate, and then hit the coated phosphor on the anode to produce luminescence.
- Some conventional cathode plates of field emission displays are fabricated by a screen printing method. The drawbacks of the method are poor resolution because of the limitation of the size of the screen mesh and non-uniform film thickness due to non-uniform tension of the screen. The non-uniform film thickness may lead to alignment problem at subsequent processes. Other conventional field emitters are formed with conic tips produced by a spindt technique. The above method usually results in a high turn on voltage and/or a short lifetime of the emitter tips.
- In order to solve the aforementioned problems, CNT field emitters have been proposed. The CNT field emitters have far superior electron field emission characteristics, such as lower turn on voltage and larger emission current density, to any conventional field emission devices. However, formation of CNTs field emitters has been hindered by difficulties encountered in the processing of such materials. The CNTs are usually fabricated by laser ablation or arc discharge or electrochemical deposition. A post-formation method, such as screen printing and spraying, must be utilized to deposit pre-formed CNTs on a field emission substrate. Both screen printing and spraying suffer poor resolution and poor uniformity problems, and are not practical for large-scale fabrication. Though the CNTs can be grown directly on the field emission substrate by use of chemical vapor deposition (CVD) techniques, such techniques require relatively high temperatures and reactive environments in order to effectively grow the CNTs. The harsh environmental conditions severely limit the substrate materials which can be utilized during the CVD, and thus make the technique non-practical.
- Therefore, CNT field emitters manufactured by photosensitive paste or EPD have been disclosed to solve the above-described problems. The method described by Hua-Chi Cheng et al in U.S. Pat. No. 6,811,457 uses a photosensitive paste and etchable dielectric material to fabricate the cathode plate of a CNT FED. The EPD method offers many advantages, such as simple process, low cost, low temperature, and feasibility of large panel production. A conventional EPD of CNT particles to form CNT field emitters was proposed by Won-bong Choi et al in U.S. Pat. No. 6,616,497 and by Otto Z. Zhou et al in US Publication 2003/0102222. In the conventional method shown in
FIG. 1 , a bias voltage from apower supply 101 was applied between two separate electrodes (anode plate 102 and cathode plate 103) immersed in anelectrophoresis bath 104 containingCNT suspension 105 to selectively depositCNT particles 106 on the surface of thecathodes 107 exposed through thegate holes 108 of thedielectric film 109. Thecathode plate 103 comprises asubstrate 110, adielectric film 109, a plurality ofcathodes 107, a plurality ofgates 111, andCNT particles 106. Under an applied electric field in thebath 104, one dimensional nanostructure materials (such as nanotubes, nanorods and linear polymers) are easily polarized along their longitudinal axis forming polarized dipoles, and these polarized dipoles can drift along the direction of the dielectrophorectic force. - Additives can be added to the electrophoresis bath to charge the nanostructure materials (e.g., CNT particles) and to facilitate electrophoretic deposition. The nanostructure materials charged by positive ions in the nanostructure suspension drift along the direction of the electrical force created by the voltage difference between the electrodes. The drawback of the method is that the selectivity of the deposition may not good enough to prevent the top area or sidewall of the
gate 111 from CNT particle deposition. This sidewall deposition will result in an electrical short circuit betweengate 111 andcathode 107. One way to solve the above problem is to use a masked sacrificial layer (e.g., photoresist) protecting or covering thegate 111 during the deposition process. The sacrificial layer and the CNT particles on the top and sidewall of thegate 111 are removed after EPD. This method requires an additional photolithographic process and thus complicates the manufacturing process and increases the manufacturing cost. - The electrophoretic deposition method of the present invention uses a triode structure having gates and a proper arrangement of applied voltages to improve the selectivity of the conventional EPD method.
- In a preferred embodiment of the present invention, two different bias voltages are applied to the gate and the cathode with respect to the anode. In general, the electrophoretic deposition method for a field field emission device according to the preferred embodiment of the present invention comprises the following steps: (a) preparing an electrophoresis bath containing nanostructure suspension, (b) preparing a field emitter plate with a triode structure having gates, wherein the field emitter plate acts as a cathode plate and comprises a substrate, plural cathodes on the substrate, a dielectric film on the substrate and the cathodes, and plural gates on the dielectric film and the substrate, (c) immersing an anode plate and the field emitter plate in the electrophoresis bath, and (d) applying two different bias voltages for a certain period of time to said gates and said cathodes, respectively, to selectively deposit nanostructure materials on the surfaces of said cathodes exposed through the gate holes of the dielectric film.
- In the first embodiment, during a selective electrophoretic deposition, a positive voltage is applied to the gates and a negative voltage is applied to the cathodes while the anode plate is kept at a common voltage.
- In another embodiment of the present invention, a bias voltage is applied between the gates and the cathodes during a selective electrophoretic deposition. In the embodiment, the electrophoretic deposition method for a field emission device comprises the same steps of (a) and (b), and two following different steps. Instead of the mentioned-above steps (c) and (d), this second embodiment immerses the field emitter plate in the electrophoresis bath, then applies a bias voltage between the gates and the cathodes for a certain period of time to selectively deposit nanostructure materials on the surfaces of said cathodes exposed through the gate holes of the dielectric film.
- The electrophoretic deposition method for a field emission device of the present invention not only has the advantages offered by the conventional EPD method but also provides a better selectivity of deposition than the conventional EPD method. It is performed at low temperature and does not require a masked sacrificial layer, and therefore keeps the manufacturing process simple and the cost down.
- The foregoing and other objects, features, aspects and advantages of the present invention will become better understood from a careful reading of a detailed description provided herein below with appropriate reference to the accompanying drawings.
-
FIG. 1 is a schematic view illustrating a CNT field emitter formed by a conventional electrophoretic deposition. -
FIGS. 2 a-2 d illustrate the steps of an electrophoretic deposition method for a field emission device according to a first embodiment of the present invention. -
FIG. 3 is a schematic drawing of electrical field distribution in the electrophoresis bath shown inFIG. 2 . -
FIG. 4 a shows a magnified schematic top view of the cross-type cathode plate of a field emitter before a selective EPD according to the present invention. -
FIG. 4 b shows a magnified schematic top view of the cross-type cathode plate of a field emitter after a selective EPD according to the present invention. -
FIG. 4 c shows a magnified schematic top view of the parallel-type cathode plate of a field emitter before a selective EPD according to the present invention. -
FIG. 4 d shows a magnified schematic top view of the parallel-type cathode plate of a field emitter after a selective EPD according to the present invention. -
FIG. 5 is a plot of the measured electron field emission current versus the applied voltage from a CNT field emitter according to the present invention. -
FIGS. 6 a-6 b illustrate the steps of an electrophoretic deposition method for a field emission device according to another embodiment of the present invention. - The present invention combines thick-film printing technique and photolithographic technology to construct a triode structure having gates for electrophoretic deposition. Then, the arrangement of applied voltages during the electrophoretic deposition and the solution in the electrophoresis bath are properly chosen to deposit nanostructure materials on the selective area of a substrate. The substrate can be a field emission substrate used as a field emitter in an FED device.
- Filtration or purification of the nanostructure materials prior to EPD is recommended in order to enhance the performance of the filed emitter. The solution in the electrophoresis bath contains a solution base and additives. Deionized (DI) water or acetone or isopropyl alcohol (IPA) can be used as the solution base. Various additives have been proposed in the literature. These additives include Benzalkonium Chloride, Mg(NO3)26H2O, AOT (bis(1-ethylhexyl) sodium sulfosuccinate), Tritron X-100, Na2CO3 and nitrate with Mg(OH)2 or Al(OH)3 or La(OH)3. Either direct current (DC) or alternating current (AC) power supplies can be utilized. According to the present invention, the cathode plate was immersed in the Tritron solution for about 10 minutes before EPD to enhance the adhesion of nanostructure materials (e.g., CNT particles) on the surface of the cathode. Moreover, 1 ppm Na2CO3 was chosen as the additive to a DI water solution with 50 ppm of CNTs to improve the electrophoretic efficiency. The conductivity of the solution increased from 0.444 ms/m to 0.702 ms/m. EPD temperature was maintained at about 50 Celsius degrees.
-
FIGS. 2 a-2 d illustrate the steps of an electrophoretic deposition method for a field emission device according to a first embodiment of the present invention. In the embodiment, anelectrophoresis bath 203 containingnanostructure suspension 204 is first prepared, as shown inFIG. 2a . Next, afield emitter plate 202 with a triodestructure having gates 206 is provided. Thefield emitter plate 202 acts as a cathode plate and includes asubstrate 212,plural cathodes 208 on thesubstrate 212, adielectric film 211 on thesubstrate 212 and thecathodes 208, andplural gates 206 on thedielectric film 211 and thesubstrate 212, as illustrated inFIG. 2b . Then, ananode plate 201 and thefield emitter plate 202 are immersed in theelectrophoresis bath 203, as shown inFIG. 2 c. Finally, as shown inFIG. 2 d, the electrophoretic deposition method according to the first embodiment applies a bias voltage V1 from apower supply 205 to thegates 206 and a bias voltage V2 from apower supply 207 to thecathodes 208 for a certain period of time to selectively depositnanostructure materials 209 on the surfaces of thecathodes 208 exposed through the gate holes 210 of thedielectric film 211. - Referring to
FIG. 2 d, theanode plate 201 is electrically connected to the other two terminals of the power supplies 205 and 207, and is kept at a common voltage V0. - According to the present invention, the nanostructure materials may include nanotubes, nanowires, nanoparticles, carbon nanotubes, carbon nanowires, and carbon nanoparticles. The dimension of the gate holes 210 used in the embodiment was around 80 μm and the thickness of the
dielectric film 211 was about 25 μm. Theanode plate 201 was made of a mesh structure in order to homogenize the electrical field distribution. -
FIG. 3 is a schematic drawing of electrical field distribution in the electrophoresis bath shown inFIGS. 2 a-2 d. The charged or polarized nanostructure materials drift along the electrical lines and then deposit on the cathode plates. The electrical field near the anode plates repels the charged or polarized nanostructure materials and thus prevents them from adhering to the anodes. - The bias voltage V1 is usually, but not limited to, a positive voltage with respect to the common voltage V0. The bias voltage V2 is usually, but not limited to, a negative voltage with respect to the common voltage V0. During a selective electrophoretic deposition, the charged or polarized
nanostructure suspension 204 is pulled through the gate holes 210 by the electrical force from the negative cathode voltage V2, and drifts toward thecathodes 208 and then deposits onto the surfaces of thecathodes 208. The positive gate voltage VI repels the charged or polarizednanostructure suspension 204 and prevents the nanostructure materials from depositing in the neighborhood of thegates 206. Therefore, thenanostructure materials 209 are selectively deposited on thecathodes 208. Therefore, an electrical short circuit between thegates 206 and thecathodes 208 can be avoided. -
FIGS. 4 a and 4 b show a magnified schematic top view of the cross-type cathode plate of a field emitter before and after the electrophoretic deposition method according to the present invention, respectively. Vertical electrode lines arecathode lines 401, while horizontal electrode lines aregate lines 402. The substance between gate lines and cathode lines is a dielectric layer. A scanning electron microscope (SEM) image (not shown) of the deposited CNT particles in a gate hole on a cathode shown inFIG. 4 b was observed. - A great amount of CNTs were coated on the cathode lines. Because CNT powder was not purified in the pre-treatment, there still existed some carbon particles coated on the cathode lines. It is suggested that removal of these particles can both enhance the field emission properties and improve the vacuum situation during the panel package process.
-
FIGS. 4 c and 4 d show a magnified schematic top view of the parallel-type cathode plate of a field emitter before and after the electrophoretic deposition method according to the present invention, respectively. -
FIG. 5 is a plot of the measured electron field emission current versus the applied voltage from a CNT field emitter according to the present invention. Referring toFIG. 5 , the turn-on electric field intensity was as low as 4.5 volt/micron, while current density reached 3.5 mA/Vcm2 at 9.5 volt/volt/micron.FIGS. 4 a, 4 b, and 5 confirm that a good selectivity of electrophoretic deposition and a good field emission property of CNT field emitter have been achieved by the electrophoretic deposition method for a field emission device according to the present invention. - In another embodiment of the present invention, a bias voltage is applied between the gates and the cathodes during a selective electrophoretic deposition. The electrophoretic deposition method for a field emission device according to the second embodiment comprises the same steps illustrated in
FIG. 2a andFIG. 2b , and two following different steps.FIG. 6 a andFIG. 6 b illustrate the two different steps, respectively. After having performed the steps illustrated inFIG. 2 a andFIG. 2 b, the electrophoretic deposition method for a field emission device according to the second embodiment immerses thefield emitter plate 202 in theelectrophoresis bath 203, as shown inFIG. 6 a. It then applies a bias voltage V2 from apower supply 604 for a certain period of time between thegates 206 and thecathodes 208 to selectively depositnanostructure materials 209 on the surfaces of thecathodes 208 exposed through the gate holes 608 of thedielectric film 211. The other terminal of thepower supply 604, which is held at a voltate of V0, is electrically connected to thegates 206. This is illustrated asFIG. 6 b. - The bias voltage V2 is usually, but not limited to, a negative voltage with respect to the common voltage V0. During a selective electrophoretic deposition, the charged or polarized
nanostructure suspension 204 is pulled through the gate holes 608 by the electric field formed by the potential difference between thegates 206 and thecathodes 208, and drifts toward thecathodes 208 and then deposits onto the surfaces of thecathodes 208. The electric field around thegates 206 repels the charged or polarizednanostructure suspension 204 and prevents the charged orpolarized nanostructure materials 204 from depositing in the neighborhood of thegates 206. Therefore, thenanostructure materials 209 are selectively deposited on thecathodes 208. An electrical short circuit between thegates 206 and thecathodes 208 can be avoided. - In summary, the present invention provides an electrophoretic deposition method for a field emission device through the use of selective electrophoretic deposition on the cathodes of a triode having gates. It resolves the problem of electrical short circuit between the gates and the cathodes through improvement of the EPD selectivity. In addition, it is performed at low temperature and does not require a masked sacrificial layer, and therefore keeps the manufacturing process simple and the cost down.
- Although the present invention has been described with reference to the preferred embodiments, it will be understood that the invention is not limited to the details described thereof. Various substitutions and modifications have been suggested in the foregoing description, and others will occur to those of ordinary skill in the art. Therefore, all such substitutions and modifications are intended to be embraced within the scope of the invention as defined in the appended claims.
Claims (17)
1. An electrophoretic deposition method for a field emission device, comprising the steps of:
(a) preparing an electrophoresis bath containing nanostructure suspension;
(b) preparing a field emitter plate with a triode structure having gates, wherein said field emitter plate acts as a cathode plate and comprises a substrate, plural cathodes on said substrate, a dielectric film on said substrate and said cathodes, and plural gates on said dielectric film and said substrate;
(c) immersing an anode plate and said field emitter plate in said electrophoresis bath; and
(d) applying two different bias voltages from one or more power supplies for a period of time to said gates and said cathodes, respectively, to selectively deposit nanostructure materials on the surfaces of said cathodes exposed through gate holes of said dielectric film, wherein said anode plate is electrically connected to a common terminal of said power supplies.
2. The electrophoretic deposition method for a field emission device as claimed in claim 1 , wherein said power supplies are direct current power supplies.
3. The electrophoretic deposition method for a field emission device as claimed in claim 1; wherein said power supplies are alternating current power supplies.
4. The electrophoretic deposition method for a field emission device as claimed in claim 1 , wherein a positive voltage is applied to said gates and a negative voltage is applied to said cathodes while said anode plate is kept at a common voltage.
5. The electrophoretic deposition method for a field emission device as claimed in claim 1 , wherein said nanostructure materials include nanotubes, nanowires, nanoparticles, carbon nanotubes, carbon nanowires, and carbon nanoparticles.
6. The electrophoretic deposition method for a field emission device as claimed in claim 1 , wherein said field emission device is used as an electron emitter for field emission displays.
7. The electrophoretic deposition method for a field emission device as claimed in claim 1 , wherein said anode plate is made of a mesh structure in order to homogenize the electrical field distribution.
8. The electrophoretic deposition method for a field emission device as claimed in claim 1 , wherein said cathode plate is a cross-type cathode plate.
9. The electrophoretic deposition method for a field emission device as claimed in claim 1 , wherein said cathode plate is a parallel-type cathode plate.
10. An electrophoretic deposition method for a field emission device, comprising the steps of:
(a) preparing an electrophoresis bath containing nanostructure suspension;
(b) preparing a field emitter plate with a triode structure having gates, wherein said field emitter plate acts as a cathode plate and comprises a substrate, plural cathodes on said substrate, a dielectric film on said substrate and said cathodes, and plural gates on said dielectric film and said substrate;
(c) immersing said field emitter plate in said electrophoresis bath; and
(d) applying a bias voltage from a power supply between said gates and said cathodes for a period of time to selectively deposit nanostructure materials on the surfaces of said cathodes exposed through gate holes of said dielectric film.
11. The electrophoretic deposition method for a field emission device as claimed in claim 10 , wherein said power supplies are direct current power supplies.
12. The electrophoretic deposition method for a field emission device as claimed in claim 10 , wherein said power supplies are alternating current power supplies.
13. The electrophoretic deposition method for a field emission device as claimed in claim 10 , wherein a negative voltage is applied to said cathodes with respect to said gates.
14. The electrophoretic deposition method for a field emission device as claimed in claim 10 , wherein said nanostructure materials comprise nanotubes, nanowires, nanoparticles, carbon nanotubes, carbon nanowires, and carbon nanoparticles.
15. The electrophoretic deposition method for a field emission device as claimed in claim 10 , wherein said field emission device is used as an electron emitter for field emission displays.
16. The electrophoretic deposition for a field emission device as claimed in claim 10 , wherein said cathode plate is a cross-type cathode plate.
17. The electrophoretic deposition method for a field emission device as claimed in claim 10 , wherein said cathode plate is a cross-type cathode plate.
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