CN101378850A - Enhancement of remote plasma source clean for dielectric films - Google Patents
Enhancement of remote plasma source clean for dielectric films Download PDFInfo
- Publication number
- CN101378850A CN101378850A CNA2006800530463A CN200680053046A CN101378850A CN 101378850 A CN101378850 A CN 101378850A CN A2006800530463 A CNA2006800530463 A CN A2006800530463A CN 200680053046 A CN200680053046 A CN 200680053046A CN 101378850 A CN101378850 A CN 101378850A
- Authority
- CN
- China
- Prior art keywords
- treatment chamber
- chamber
- species
- reactive
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 82
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 80
- 239000001301 oxygen Substances 0.000 claims abstract description 79
- 239000007789 gas Substances 0.000 claims abstract description 78
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 76
- 238000004140 cleaning Methods 0.000 claims abstract description 61
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 54
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 36
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 11
- 150000002367 halogens Chemical class 0.000 claims abstract description 11
- 238000004380 ashing Methods 0.000 claims abstract description 10
- 239000011149 active material Substances 0.000 claims description 58
- 239000003642 reactive oxygen metabolite Substances 0.000 claims description 51
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 34
- 229910052731 fluorine Inorganic materials 0.000 claims description 34
- 239000011737 fluorine Substances 0.000 claims description 34
- 239000007845 reactive nitrogen species Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 22
- -1 alkyl compound Chemical class 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 239000013049 sediment Substances 0.000 claims description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 238000004020 luminiscence type Methods 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 238000005259 measurement Methods 0.000 claims 3
- 238000012545 processing Methods 0.000 abstract description 19
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 239000012159 carrier gas Substances 0.000 description 10
- 239000001307 helium Substances 0.000 description 9
- 229910052734 helium Inorganic materials 0.000 description 9
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 239000003085 diluting agent Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003575 carbonaceous material Substances 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 238000001157 Fourier transform infrared spectrum Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 2
- 150000003961 organosilicon compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- 101100504388 Arabidopsis thaliana GFS12 gene Proteins 0.000 description 1
- 102100022717 Atypical chemokine receptor 1 Human genes 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 101000678879 Homo sapiens Atypical chemokine receptor 1 Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229960004424 carbon dioxide Drugs 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
Images
Abstract
Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
Description
Technical field
Embodiments of the invention are relevant for the method for using a remote plasma source to come the cleaning chamber substantially.
Background technology
The size of integrated circuit how much scales reduces as the drama, and this is because such device is at first introduced before many decades.Since then, integrated circuit is being followed the rule (being commonly called Moore's Law (Moore ' s Law)) of 2 years/one half-size scale haply, and its device count that is meaning on the chip every two years can double.The manufacturing facility of today system tritionally manufacturing have 0.13 micron and even the device of 0.1 micron feature size, and the facility of tomorrow will be made and has even the device of small-feature-size more.
Help such gadget size development one promptly be the development of patterning rete, wherein these patterning retes can be by patterning subtly, and has the ability that shifts fine pattern via base material below level.One example of such patterning rete is amorphous carbon films, for example APF
TMRete, it can be by the Applied Materials in the holy big Ke Laola city of California, USA, and lnc. company obtains.
Use amorphous carbon patterning rete to produce the demand of the method for removing carbonaceous material in the semiconductor devices manufacturing, wherein this not happy insight of carbonaceous material system is created within order on the inner surface of the chamber of handling (for example deposition or etching) amorphous carbon patterning rete (for example sidewall and chamber part).Use is by in-situ radio-frequency in the chamber (RF) oxygen (O that power activated
2) developed as the cleaning course of clean air and to be used for to clean the chamber that is suitable for deposit amorphous carbon films.Yet, need can damage chamber part with the original position RF power of removing carbon-containing sediment.Use is by oxygen O that remote plasma source activated
2Can reduce or eliminate chamber damage during the cleaning course as the cleaning course of clean air.But many oxygen radicals that produced by remote plasma source can combination again before reaching enough chamber clean.For example, oxygen radical may be before it arrives at the All Ranges of the chamber that needs cleaning again in conjunction with to form O
2
The continuous decrease of how much scales of device also causes the demand for the rete with low-k (k) value.Have the k value and be lower than about 3.0 and even be lower than about 2.5 low dielectric constant films (for example organosilicon rete (SiCOH rete)) and developed.These retes have high-carbon content.Low-k SiCOH rete usually is used with siliceous resistance barrier rete with carbon.
Development with low dielectric constant films of high-carbon content has produced the demand of the method for removing carbonaceous material, and wherein this carbonaceous material system is deposited on the inner surface of the chamber that is used for handling low dielectric constant films.What have been found that is, the method that is used for removing the material that is derived from other dielectric film layer (for example carbon-free membranous layer of silicon oxide) has had not happy negative effects of seeing, and always is not enough to remove carbon elimination from the deposit that is derived from low dielectric constant films (it has high-carbon content).For example, have been observed that (wherein this RF power train can activate enough NF with the formation cleaning this chamber and can pollute aluminum fluoride particles by in-situ radio-frequency (RF) power to one low dielectric constant organosilicon rete deposition chambers is provided
3Clean carbon deposits), this is that wherein aluminium is usually used as the lining material in the treatment chamber because the fluorine ion that RF power is produced can combine with aluminium.
Remove contaminate particulate and become importantly gradually from treatment chamber, because device size becomes littler, and depth-to-width ratio (aspect ratio) becomes more crucial.Along with littler characteristic size and bigger depth-to-width ratio, the size of contaminate particulate and number must be reduced to keep device efficiency.
Therefore, have the demand of the method for a kind of chamber of cleaning efficiently and the formation of minimizing pollutant.Especially, having a kind of cleaning is used for handling rete (it has high-carbon content, the demand of the method for chamber amorphous carbon films for example), wherein these retes can be used as patterned film layer, low dielectric constant organosilicon rete and siliceous and carbon resistance barrier rete.
Summary of the invention
The present invention is the method relevant for the clean semiconductor treatment chamber substantially.Be used for handling the semiconductor processing chamber that has carbon-containing sediment on carbon containing rete and its inner surface by using method described herein, can cleaning.For example, by using method described herein, can clean the semiconductor processing chamber of the low dielectric constant films that is used for handling amorphous carbon films, siliceous and carbon resistance barrier rete and siliceous, oxygen and carbon.
In one embodiment, the method system that a kind of cleaning one has the treatment chamber of carbon-containing sediment comprises: from oxygen-containing gas generation reactive oxygen species, wherein this remote plasma source is connected to this treatment chamber in a remote plasma source; In this remote plasma source, produce reactive nitrogen species from a nitrogenous gas; Guide this reactive oxygen species and this reactive nitrogen species enters this treatment chamber; And a plurality of inner surfaces that do not have in chamber under the RF power this treatment chamber are exposed to this reactive oxygen species and this reactive nitrogen species.Chamber has a gas dispense assembly and a plurality of chamber wall, and the gas dispense assembly comprises a panel, and gas dispense assembly and chamber wall all are heated to a temperature during cleaning course, be preferably at least 150 ℃.Reactive fluorine species also can be imported into from remote plasma source and be used for the treatment chamber of depositing silicon and carbon film layer, is cleaned and does not use reactive fluorine species and be used for depositing the treatment chamber system that does not contain silicon film.
In another embodiment, a kind of method system of cleaning one treatment chamber comprises: carry out a podzolic process based on oxygen in this treatment chamber; Produce active material from a halogen-containing gas in a remote plasma source, wherein this remote plasma source is connected to this treatment chamber; Guiding enters this treatment chamber from the reactive oxygen species of this halogen-containing gas; And a plurality of inner surfaces of this treatment chamber are exposed to this active material.
Podzolic process system based on oxygen comprises importing one oxygen-containing gas to this treatment chamber, and applies RF power to produce reactive oxygen species from oxygen-containing gas in this treatment chamber.Podzolic process based on oxygen can be performed as a step.Alternatively, can be performed in two steps based on the podzolic process of oxygen, one step system is in order to the panel of cleaning chamber, and another step system is in order to other inner surface of cleaning chamber.The RF power train is terminated after the podzolic process based on oxygen, and the inner surface of treatment chamber ties up to and do not have the active material that is exposed under the RF power from remote plasma source.Based on the podzolic process of oxygen in order to removing carbon-containing sediment from chamber inner surface, and from the active material of remote plasma source in order to successively to remove siliceous and oxygen deposition thing from chamber inner surface.In a preferred embodiment, use be oxygen (O based on the oxygen-containing gas in the podzolic process of oxygen
2), the halogen-containing gas that active material in the former end plasma source is provided is Nitrogen trifluoride (NF
3).
Description of drawings
Stating feature before the present invention can be by at length being understood with reference to embodiment, and some of them embodiment system is illustrated in the accompanying drawing.Yet, must be noted that accompanying drawing only shows exemplary embodiments of the present invention, and therefore do not assert and can limit the scope of the invention that the present invention can have other equivalent embodiment.
The 1st figure is a flow chart, and it is an embodiment who draws the method for cleaning one treatment chamber.
The 2nd figure is the sectional view of a treatment chamber, and wherein this treatment chamber can be cleaned according to the embodiment of the invention.
The 3rd figure is a flow chart, and it is another embodiment that draws the method for cleaning one treatment chamber.
The 4th figure shows the Si-CH of the FTIR spectrum on internal chamber surface
3Curve, wherein this internal chamber surface system goes through the podzolic process based on oxygen performed according to one embodiment of the invention.
The specific embodiment
The present invention is the method that provides in order to cleaning chamber (for example deposition chambers) substantially, and wherein this treatment chamber system is used for making integrated circuit and semiconductor devices.These clean methods include and use the active material that results from the remote plasma source, to clean carbon-containing sediment from treatment chamber.
The one embodiment system of chamber clean method described herein is drawn on the 1st figure, and following will at length the discussion.Shown in step 100, an ashing based on oxygen (ashing) process is performed in the treatment chamber.Shown in step 102, reactive species is created within the remote plasma source from a halogen-containing gas, and wherein this remote plasma source is connected to treatment chamber.Shown in step 104, active material is imported into treatment chamber.Shown in step 106, then, when not having RF power in chamber, the inner surface of treatment chamber is exposed to active material.
Can use an example of the chamber that this paper method cleans to be
The chemical vapor deposition (CVD) chamber, it can be by the Applied Materials in the holy big Ke Laola city of California, USA, and lnc. company obtains.
Chemical vapor deposition chamber have two in order to the deposit carbon doped silicon oxide (for example comprise silicon, oxygen, with carbon, and the low dielectric constant films of other material) area of isolation.A kind of chamber system with two isolation processing zones is described in U.S. Pat 5,855, and in 681, it is merged in this paper with as reference at this.
Gas flow rate described below means the flow velocity that CVD chamber integral body (i.e. two isolation processing zones) is experienced.Be to be about half of gas flow rate that CVD chamber integral body experienced with, the gas flow rate that each processing region experienced of CVD chamber.Though some example systems of embodiment are narrated with the processing region that cleaning has the CVD chamber of two processing regions, method described here can be used to clean a processing region that has or surpass the chamber of two processing regions.
Example system with chamber of two processing regions and two remote plasma sources is shown in the 2nd figure.Chamber 200 has processing region 218 and 220 in a chamber body 212, chamber body 212 has wall, has a heater (not shown) in the wall.One remote plasma source 250 is connected to processing region 218, and another remote plasma source 250 is connected to processing region 220.One substrate support 228 (it is that seat is carried in a heating) is to be arranged on movably in each processing region 218,220 by a body of rod 226, and the body of rod 226 extends through the bottom of chamber body 212 and is connected to a drive system 203.Each processing region 218,220 also preferably comprises a gas dispense assembly 208, and gas dispense assembly 208 is to be configured to pass Pit cover 204.The gas dispense assembly 208 of each treatment chamber comprises a gas access channel 240, and gas access channel 240 can carry gas to enter a sprinkle head device 242.Sprinkle head device 242 comprises that a panel 246 enters processing region 218,220 to carry gas.Gas dispense assembly 208 comprises a heater (not shown), the parts (comprising panel 246) of heater meeting heated air dispensing assembly 208.
Consult the 1st figure again, comprise that based on the podzolic process of oxygen guiding one oxygen-containing gas enters treatment chamber, and apply RF power in treatment chamber to provide in order to produce the plasma of reactive oxygen species.Reactive oxygen species can be the oxygen species of oxygen radical, ionized oxygen material or excited state.Oxygen-containing gas can be selected from for example by O
2, O
3, CO
2, in the group that constituted with its composition.Oxygen-containing gas can be imported into treatment chamber with a flow velocity.The flow velocity that this paper provided and other treatment conditions system is in order to handling the chamber of 300 millimeters base materials, and can be adjusted for other base material or chamber size.Optionally, oxygen-containing gas can be imported into treatment chamber with a dilution carrier gas (for example argon, nitrogen or helium), to increase chamber ionic medium body stability.Podzolic process based on oxygen is to be executed to be enough to remove under the condition that before had been formed at the carbon deposits on the chamber inner surface.Based on the speed of the podzolic process of oxygen can by change RF power, at interval, the flow velocity of temperature, oxygen-containing gas, and pressure adjust.
After the podzolic process based on oxygen was performed in the treatment chamber, the active material that the RF power train produces in remote plasma source in the treatment chamber was stopped before being imported into chamber, shown in the step 102 and 104 of the 1st figure.Preferably, after finishing based on the podzolic process of oxygen, the reactive species that produces in remote plasma source is imported into chamber immediately, makes to be carried out by " successively (back-to-back) " with the cleaning system that uses the active material that produces in the remote plasma source based on the ashing of oxygen.
By in remote plasma source a halogen-containing gas (for example fluoro-gas or chlorine-containing gas) being exposed to condition of plasma, active material can be resulted from the remote plasma source.The example system of the fluoro-gas that can be used comprises NF
3, CF
4, C
2F
4, C
2F
6, F
2, with its combination.The example system of the chlorine-containing gas that can be used comprises CCl
4, C
2Cl
6, Cl
2, with its combination.
Remote plasma source provide can be about for example 10 kilowatts in order to the power that produces active material.Active material can be the material of free radical, ionised species or excited state.For example, active material can be the fluorine material of fluoro free radical, ionized fluorine species or excited state.Active material can be imported into treatment chamber from remote plasma source with a flow velocity.The inner surface of treatment chamber is exposed to active material and continues one section and be enough to remove siliceous and the time oxygen deposition thing, wherein at carbon-containing sediment by these deposit systems and remain on the chamber inner surface from chamber inner surface is removed after based on the podzolic process of oxygen.
In preferred embodiment, being used in based on the oxygen-containing gas in the podzolic process of oxygen is O
2, and the halogen-containing gas of active material in the remote plasma source is provided is NF
3
Though the embodiment of the 1st figure system will show based on the podzolic process of oxygen and be described as one step 100, in other embodiments, comprise two steps based on the podzolic process of oxygen.For example, can comprise one in order to the step of cleaning chamber panel mainly based on the podzolic process of oxygen, and the step of the chamber inner surface of another cleaning except panel.For example, can comprise with first pressure and first panel to substrate support based on the podzolic process of oxygen and to come clean face plate at interval, and other inner surface that then comes cleaning chamber with second pressure and second panel to substrate support at interval.The preferably, with respect to be used for cleaning chamber other inner surface pressure with at interval for, panel is to be cleaned at elevated pressures and less panel to the substrate support interval.Except pressure and interval, other treatment conditions (for example temperature, RF power, with the flow velocity of oxygen-containing gas) can not change during panel cleaning and chamber inner surface cleaning, and can be situated in the condition and range of one step based on the podzolic process of oxygen that is same as according to the 1st figure embodiment.
By utilize based on the podzolic process of oxygen handle have silicon, carbon, with the chamber of oxygen deposition thing on inner surface, many carbon deposits can be removed, this be because based on the podzolic process of oxygen can the carbonoxide deposit (CO for example
2, CO
2Be the gas that to remove from chamber easily).The 4th figure shows that the internal chamber surface going through Fu Liye conversion infrared spectrometer (FTIR) spectrum of the podzolic process based on oxygen performed according to one embodiment of the invention (after carrying out ashing 0,30,60 and 90).FTIR spectrum demonstrates Si-CH
3The peak carries out along with the podzolic process based on oxygen and reduces.So after the podzolic process based on oxygen, remaining deposit is mainly siliceous and the oxygen deposition thing, it can be removed by using the active material that is only produced by remote plasma source (promptly not having original position RF power).
Preferred embodiment of the present invention is to be summarized among the 3rd figure, and hereinafter will at length discuss.In the embodiment of the 3rd figure, result from reactive species in the remote plasma source in order to clean a treatment chamber, wherein this treatment chamber system is connected to remote plasma source and does not use RF power in treatment chamber during cleaning course.Shown in the step 302 of the 3rd figure, reactive oxygen species and reactive nitrogen species are resulted from one and are connected in the remote plasma source of treatment chamber.Then, reactive oxygen species and reactive nitrogen species are imported into treatment chamber (shown in step 304), and the inner surface of treatment chamber is to be exposed to reactive oxygen species and reactive nitrogen species to remove carbon-containing sediment (shown in step 306) from treatment chamber not having in the treatment chamber under the RF power.Preferably, reactive oxygen species is from O
2Produce.Reactive nitrogen species is from for example N
2, N
2O or NO
3Produce.
Carbon-containing sediment reaction on reactive oxygen species and the chamber inner surface, to form volatility oxygen and carbonaceous by-products, it can be removed from chamber easily.Reactive nitrogen species promotes dissociating in order to the oxygen-containing gas that reactive oxygen species is provided.Reactive nitrogen species also helps to transmit reactive oxygen species to chamber, and then discharges reactive oxygen species with activated form in treatment chamber.
Optionally, reactive fluorine species is also resulted from the remote plasma source, and is imported into treatment chamber.Reactive fluorine species is useful for remove siliceous deposit from chamber.If treatment chamber is not to be used for depositing the rete that the comprises silicon chamber of deposit amorphous carbon films (for example only be used for), be preferably and do not use reactive fluorine species ground to come cleaning chamber, this is because reactive fluorine species can form fluorocarbon polymer with the carbon-containing sediment reaction on chamber surfaces.On the other hand, for being used for deposit amorphous carbon films and SiON dielectric anti-reflective coating (dielectric anti-reflective coating, DARC) both chambers, desirable is to comprise that in cleaning course reactive fluorine species is to remove siliceous deposit.
Preferably, an inert gas (for example argon, helium or other inert gas) also is present in the remote plasma source during the generation active material.Inert gas helps the pressure in the stabilisation remote plasma source, and helps to transmit active material to treatment chamber.Inert gas also can be dissociated by remote plasma, and promotes cleaning course.Inert gas can be selected to be removed from treatment chamber according to sedimental type.For example, helium can be used as Clean-deposit contain silicon, oxygen, carbon, with the inert gas of the treatment chamber of the low dielectric constant films of hydrogen, and argon can be used as Clean-to come deposit amorphous carbon films or contain silicon and carbon but do not contain the inert gas of the treatment chamber of aerobic.Yet any inert gas can be used to clean the chamber that is used for depositing any rete described herein.
In case reactive oxygen species, reactive nitrogen species, with reactive fluorine species optionally be in treatment chamber the time, the cleaning action of active material extremely promotes at least about 150 ℃ of temperature by heated air dispensing assembly (comprising panel and chamber wall).Heat these chamber surfaces systems by in chamber, activating and setting up extra active material and come the expedite clean-up process.On the one hand, chamber surfaces is by continuation after deposition one rete is finished in chamber and during whole cleaning course or is maintained heat and is heated that wherein this heat is typically to be applied in these surfaces between depositional stage on base material.
For the cleaning course that plasma is provided in the chamber, the cleaning course based on remote plasma described here has some advantages with respect to using original position RF power.For example, can reduce damage to chamber part (for example panel), this be because plasma based by remotely but not provide in situ.The formation of aluminum fluoride particles is also by remotely but not provide plasma to be reduced in situ on the panel.The active material that remote plasma source provides can arrive at and be difficult to the cavity area of utilizing original position RF power to clean, for example chamber slit valves (slit valve) or base material passage, exhaust port and cavity bottom, this is because it is not that the position is in the plasma treatment zone of chamber.Moreover, cleaning course based on remote plasma described here can provide higher etch-rate than the cleaning course based on the original position oxygen plasma, wherein should can cause residue or sedimental plasma densificationization on chamber surfaces based on the cleaning course of original position oxygen plasma.The residue of plasma densificationization is more to be difficult to etching, and therefore can slow down cleaning course.
In order further to strengthen the cleaning of cavity bottom, active material from remote plasma source can be imported into cavity bottom to line (it is to extend into cavity bottom from remote plasma source) via one minute, make some active materials be imported into chamber and can be not earlier gas dispense assembly by chamber.
Cleaning is used for the chamber of rete of depositing silicon and carbon
For chamber, be useful especially in this chamber clean method that provides in order to the siliceous rete (for example siliceously hinder rete, and the low dielectric constant films (such as k＜2.5) of siliceous, carbon, oxygen and hydrogen) with carbon of deposition and post processing with the carbon resistance.For example, low dielectric constant films can deposit by carrying out plasma fortified chemical vapour deposition (CVD) from the deposition gas mixture that comprises organo-silicon compound and an alkyl compound.As this definien, alkyl compound system comprises the hydrocarbon that only has carbon and hydrogen, and mainly has the compound that carbon and hydrogen still also comprise other atom (for example oxygen or nitrogen).Deposition gas mixture also can comprise other composition, for example oxidizing gas and a plurality of organo-silicon compound.Be used for adjusting membranous layer property (for example increase porosity and the improve engineering properties) system of processing afterwards and comprise plasma, UV and electron beam treatment.The method system that deposits such low dielectric constant films is described in commonly assigned United States Patent (USP) case US6,936,551 with U.S. Patent Publication case US2004/0101633 in, it is merged in this paper with as reference at this.
The process condition that comes Clean-chamber with depositing silicon and carbon and selectivity oxygen rete by the 3rd figure cleaning course hereinafter will be provided.Reactive oxygen species and reactive fluorine species can be the material of free radical, ionised species or excited state.Reactive oxygen species produces from oxygen-containing gas, for example O
2, O
3, CO
2, with its composition.Reactive fluorine species produces from fluoro-gas, for example NF
3, CF
4, C
2F
4, C
2F
6, F
2, with its composition.In a preferred embodiment, reactive oxygen species is from O
2Produce, and reactive fluorine species is from NF
3Produce.Reactive oxygen species can be imported into treatment chamber from remote plasma source with first flow velocity, and reactive fluorine species can be imported into treatment chamber from remote plasma source with second flow velocity.Preferably, reactive oxygen species is from O
2Produce, and reactive fluorine species is from NF
3Produce.
We are observed to be, for the etch-rate of control cleaning course, from NF
3The flow velocity of the active material that produces is to from O
2The ratio of the flow velocity of the active material that produces (is abbreviated as NF at this
3: O
2Ratio) be a significant variable.Best, NF
3: O
2About 0.083 (1:12) of ratio.We are also observed to be, though most of silicon can be at higher NF
3: O
2Ratio residue on the chamber surfaces is removed, at higher NF
3: O
2Ratio is finished after the chamber clean process, can residual lax solid carbon and fluorine-containing residue.
Optionally, can use a carrier gas or diluent gas (for example argon or helium) to promote that active material is sent to treatment chamber from remote plasma source.
The inner surface of treatment chamber is exposed to active material is enough to remove siliceous and time carbon deposits for one section, wherein in the previous chamber of this deposition system during depositing silicon and carbon film layer (for example from including the low dielectric constant films that mixture deposited of organic silicon compound and alkyl compound) be formed on the inner surface of treatment chamber.
The inner surface of chamber be exposed to active material during, chamber pressure can be between about 1 holder be held in the palm with about 2.8.Higher chamber pressure can cause lower etch-rate.What believed is, what higher pressure can quicken active material is combined into more not active material again, for example fluoro free radical can be again in conjunction with and form F
2, be sent to the cavity area that is difficult to clean and lower pressure can promote active material.
What believed is, with NF
3With O
2The condition of plasma that both are exposed in the remote plasma source can produce the OF free radical, the OF free radical can be dissociated into oxygen and fluoro free radical, and oxygen and fluoro free radical can form CO and the HF volatile byproducts that can remove from chamber easily with the reaction of carbon containing in the chamber and hydrogen residue.With respect to NF
3With O
2Both were exposed to the cleaning course of remote plasma source ionic medium concrete conditions in the establishment of a specific crime before being imported into treatment chamber, known use is similar at this institute's process condition that provides (except O
2Be from the remote plasma source downstream but not in remote plasma source, be provided to treatment chamber outside) cleaning course system reduce etch-rate significantly.
Work as O
2When the remote plasma source downstream is provided to treatment chamber, lack NF
3With O
2Intensify and potential active material has been proved the afterglow luminescence (luminescence of the afterglow) that can lack in the plasma.Afterglow luminescence usually occurs in works as NF
3With O
2Both before being imported into treatment chamber, be exposed to remote plasma source ionic medium concrete conditions in the establishment of a specific crime the time.Therefore, observed NF
3With O
2Plasma afterglow luminescence can be used to monitor clean rate condition in the treatment chamber, except using the terminal point indication of sunset glow (afterglow) as cleaning course.In one embodiment, NF
3With O
2The intensity of plasma afterglow luminescence can be measured by traditional photometer (luminometer) that this technical field is known.Higher represents NF higher in the plasma through the measured intensity value
3With O
2Intensify material concentration.Therefore, can be used as procedure parameter (for example flow velocity, temperature, with RF power) how to influence NF in the plasma through the intensity level of measuring
3With O
2The formation that intensifies material with thereby the pointer of clean rate condition.The increase of luminous intensity values also can be used the terminal point indication as cleaning course during the cleaning course.When cleaning course is initiated, NF in the plasma
3With O
2Intensifying material can react with carbon containing in the chamber and hydrogen residue.In case removed after carbon containing and the hydrogen residue NF
3With O
2The concentration that intensifies material can increase, and this is because not too there is the material of intensifying to react with carbon containing and hydrogen residue.
Preferably, the inner surface of chamber chamber inner surface be exposed to active material during be heated at least about 150 ℃ of temperature.Inner surface can heat by a heated substrate support in the chamber and a heated air dispensing assembly.The inner surface of heated chamber can see through and activate in chamber and set up extra active material and come the expedite clean-up process.For example, on the surface that is heated at least about 150 ℃ of temperature, quite not active clean air O
3Will dissociate, and reactive oxygen species is provided.The panel of heated air dispensing assembly is the expedite clean-up process especially, and this is because panel can allow more active materials to enter in the chamber other parts.
Cleaning is used for the chamber of deposit amorphous carbon films
Person as discussed, being used for the treatment chamber of deposit amorphous carbon films can be exposed to reactive oxygen species and reactive nitrogen species by the inner surface with treatment chamber and not have reactive fluorine species and clean, wherein this reactive oxygen species and reactive nitrogen species are produced by a remote plasma source, that is do not have the reactive fluorine species that provided by remote plasma source or by importing the fluorine source and apply the reactive fluorine species that power produces in chamber.In addition, person as discussed, the inner surface of chamber is heated in a temperature, for example at least about 150 ℃ temperature.
Be used for deposit amorphous carbon films treatment chamber can for
Or
Chamber, these both all can be by Applied Materials, lnc. company obtains.Remote plasma source can be for obtaining from MKS Instruments company
Remote plasma source.But, can use other treatment chamber and remote plasma source.
Remote plasma source provide can be up to 10 kilowatts in order to the power that produces active material.Reactive oxygen species can be imported into treatment chamber from remote plasma source with first flow velocity, and reactive nitrogen species can be imported into treatment chamber from remote plasma source with second flow velocity.Preferably, reactive oxygen species is by O
2Produce.
Optionally, can use a carrier gas or diluent gas (for example argon or helium) to promote that active material is sent to treatment chamber from remote plasma source.
Chamber inner surface be exposed to active material during, chamber pressure can be between about 1 holder be held in the palm with about 2.
According to a further aspect in the invention, one cleaning course system is used for the treatment chamber of deposit amorphous carbon films in order to cleaning, and wherein this cleaning course comprises: produce reactive oxygen species and produce reactive fluorine species from a fluoro-gas from an oxygen-containing gas in being connected to the remote plasma source of treatment chamber; Guiding reactive oxygen species and reactive fluorine species enter treatment chamber; And in chamber, do not have under the RF power and chamber inner surface to be exposed to reactive oxygen species and reactive fluorine species.Especially, strengthen in chemical vapour deposition (CVD) (PECVD) reaction deposit that is formed on during aromatic series predecessor (for example toluene, cyclic compound, the unsaturated hydrocarbon) deposit amorphous carbon films on the treatment chamber inner surface for desiring to remove before at a plasma, such cleaning course is useful.Usually comprise big polymerization carbon-containing residue at formed deposit during such predecessor deposit amorphous carbon films, these residues more are difficult to remove than formed deposit during short chain Linear Carbon hydrogen compound (for example propylene or acetylene) deposit amorphous carbon films.It should be noted that, provide the cleaning course that is used for cleaning from the chamber of aromatic series predecessor (for example toluene, other cyclic compound, unsaturated hydrocarbon) deposit amorphous carbon films at this, also can be used to the chamber of cleaning from other hydrocarbon (for example short chain Linear Carbon hydrogen compound similarly is propylene or acetylene) deposit amorphous carbon films.
Be used for deposit amorphous carbon films treatment chamber can for
Or
Chamber, these both all can be by Applied Materials, lnc. company obtains.Remote plasma source can be for obtaining from MKS Instruments company
Remote plasma source.But, can use other treatment chamber and remote plasma source.
Remote plasma source provide can be up to 10 kilowatts in order to the power that produces active material.Reactive oxygen species can be imported into treatment chamber from remote plasma source with flow velocity between about 1000sccm and about 4000sccm, and reactive nitrogen species can be imported into treatment chamber from remote plasma source with flow velocity between about 50sccm and about 500sccm.Preferably, reactive oxygen species is by O
2Produce, and reactive fluorine species is by NF
3Produce.Observedly be, for the etch-rate of control cleaning course, from NF
3The flow velocity of the active material that produces is to from O
2The ratio of the flow velocity of the active material that produces (is abbreviated as NF at this
3: O
2Ratio) be a significant variable.Preferably, NF
3: O
2With about 0.3, this is because higher Yu lower ratio can cause lower etch-rate between about 0.1 (1:10) for ratio system.Best, NF
3: O
2Ratio is about 0.1.
Optionally, can use a carrier gas or diluent gas (for example argon or helium) to promote that active material is sent to treatment chamber from remote plasma source.Carrier gas or diluent gas enter the flow velocity of treatment chamber can be between about 0sccm and about 3000sccm or even up to 9000sccm.For the cleaning course and the cleaning course that uses helium as carrier gas or diluent gas that use argon as carrier gas or diluent gas, can obtain the etch-rate of comparison.The NF of this two cleaning courses the best
3: O
2Ratio is 0.1.When at NF
3: O
2Ratio 0.1 uses helium but not argon during as carrier gas or diluent gas, can observe high slightly etch-rate.
NF
3, O
2And optionally the overall flow rate of carrier gas can be between about 2000sccm and about 6000sccm.Under higher overall flow rate, can obtain higher etch-rate.
Chamber inner surface be exposed to active material during, chamber pressure can be between about 1 holder be held in the palm with about 2.Chamber pressure is higher than about 2 whens holder, can observe the remarkable decline of etch-rate.
The temperature of substrate support can be set between about 300 ℃ and about 400 ℃.Preferably, the gas dispense assembly can be heated to about 160 ℃ temperature, and makes panel go to have an appointment 160 ℃ temperature.Yet the gas dispense assembly also can be heated to lower temperature, for example between about 75 ℃ and about 160 ℃.Viewed is can increase etch-rate in higher gas dispense assembly heter temperature.Yet, 75 ℃ of heter temperatures, can observe gratifying greater than 8000 dusts/minute etch-rate.
At interval can be between the panel of substrate support and gas dispense assembly between about 200 Mills and about 1000 Mills.
The inner surface of treatment chamber is exposed to one section of active material to be enough to remove siliceous and the time oxygen deposition thing from chamber inner surface.For example, for per 1000 dust thickness of deposits, the inner surface of treatment chamber can be exposed to active material about 35 seconds.
The example of one embodiment below will be described.
Example 1
Though aforementioned system focuses on embodiments of the invention, of the present invention other can be conceived not breaking away under its base region with further embodiment, and scope of the invention system is determined by the claim of enclosing.
Claims (20)
1. one kind is used to clean a method that includes the treatment chamber of a plurality of chamber walls and a gas dispense assembly, and this gas dispense assembly has a panel, and this method comprises:
Produce reactive oxygen species from an oxygen-containing gas in a remote plasma source, wherein this remote plasma source is connected to this treatment chamber;
In this remote plasma source, produce reactive nitrogen species from a nitrogenous gas;
Guide this reactive oxygen species and this reactive nitrogen species enters this treatment chamber; And
The a plurality of inner surfaces that do not have in chamber under the situation of RF power this treatment chamber are exposed to this reactive oxygen species and this reactive nitrogen species, and heat this gas dispense assembly and these chamber walls simultaneously, wherein a plurality of inner surfaces are exposed to this reactive oxygen species and this reactive nitrogen species and can remove carbon-containing sediment on the previous inner surface that in this treatment chamber, is formed at this treatment chamber during deposition one amorphous carbon films.
2. the method for claim 1, wherein these inner surfaces are exposed to this reactive oxygen species and this reactive nitrogen species, and are not exposed to reactive fluorine species.
3. the method for claim 1, wherein this reactive oxygen species is from O
2Produce, and this reactive nitrogen species is from NF
3Produce.
4. method as claimed in claim 3 is wherein from NF
3The active material that produces flow into the flow velocity of this treatment chamber with from O
2The active material that produces flows into the ratio of flow velocity of this treatment chamber between about 0.1 and about 0.3.
5. method as claimed in claim 4, wherein the inner surface of this treatment chamber is being exposed to this reactive oxygen species and this reactive nitrogen species under the chamber pressure between about 1 holder and about 2 holders.
6. the method for claim 1, wherein this amorphous carbon films is to comprise the admixture of gas of toluene from one by the PECVD process to deposit.
7. the method for claim 1 also comprises the afterglow luminescence of measurement this reactive oxygen species and this reactive nitrogen species in this treatment chamber.
8. one kind is used to clean a method that includes the treatment chamber of a plurality of chamber walls and a gas dispense assembly, and this gas dispense assembly has a panel, and this method comprises:
Produce reactive oxygen species from an oxygen-containing gas in a remote plasma source, wherein this remote plasma source is connected to this treatment chamber;
In this remote plasma source, produce reactive fluorine species from a fluoro-gas;
Guide this reactive oxygen species and this reactive fluorine species enters this treatment chamber; And
The a plurality of inner surfaces that do not have in chamber under the situation of RF power this treatment chamber are exposed to this reactive oxygen species and this reactive fluorine species, heat this gas dispense assembly and these chamber walls simultaneously, wherein a plurality of inner surfaces are exposed to this reactive oxygen species and this reactive fluorine species can be removed the siliceous and carbon that before forms on the inner surface of this treatment chamber deposit.
9. method as claimed in claim 8, wherein this reactive oxygen species is from O
2Produce, and this reactive fluorine species is from NF
3Produce.
10. method as claimed in claim 9 is wherein from NF
3The active material that produces flow into the flow velocity of this treatment chamber with from O
2The ratio that the active material that produces flows into the flow velocity of this treatment chamber is about 1:12.
11. method as claimed in claim 10, wherein the inner surface of this treatment chamber is being exposed to this reactive oxygen species and this reactive fluorine species under the chamber pressure between about 1 holder and about 2.8 holders.
12. method as claimed in claim 8, wherein in this treatment chamber from the mixture that includes organic silicon compound and alkyl compound deposit a low dielectric constant films during, form this siliceous and deposit carbon.
13. method as claimed in claim 8 also comprises the afterglow luminescence of measurement this reactive oxygen species and this reactive nitrogen species in this treatment chamber.
14. a method that is used to clean a treatment chamber comprises:
In this treatment chamber, carry out an ashing based on oxygen;
Produce active material from a halogen-containing gas in a remote plasma source, wherein this remote plasma source is connected to this treatment chamber; And
The a plurality of inner surfaces that do not have in this treatment chamber under the situation of RF power this treatment chamber are exposed to this active material.
15. method as claimed in claim 14, should comprise wherein that importing an oxygen-containing gas applied RF power with the generation reactive oxygen species to this treatment chamber and in this treatment chamber based on the ashing of oxygen, and this RF power is terminated before a plurality of inner surfaces with this treatment chamber are exposed to from the active material of halogen-containing gas.
16. method as claimed in claim 15 wherein should comprise based on the ashing of oxygen importing O
2To this treatment chamber, and this halogen-containing gas is NF
3
17. method as claimed in claim 14, wherein this treatment chamber comprises a panel and a substrate support, and should comprise other surface of cleaning this panel and clean this treatment chamber with second pressure and second panel to the interval of substrate support with first pressure and first panel to the interval of substrate support based on the ashing of oxygen.
18. method as claimed in claim 14, wherein this halogen-containing gas is fluoro-gas or chlorine-containing gas.
19. method as claimed in claim 14, wherein should be exposed to this active material and can remove silicon, carbon and oxygen deposition thing on this treatment chamber inner surface based on the ashing of oxygen and a plurality of inner surfaces with this treatment chamber, these deposits be before in this treatment chamber from the mixture that includes organic silicon compound and alkyl compound deposit a low dielectric constant films during formed.
20. method as claimed in claim 14 also comprises the afterglow luminescence of measurement this reactive oxygen species and this reactive nitrogen species in this treatment chamber.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77541406P | 2006-02-21 | 2006-02-21 | |
| US60/775,414 | 2006-02-21 | ||
| US77/508,544 | 2006-08-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101378850A true CN101378850A (en) | 2009-03-04 |
Family
ID=40421939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006800530463A Pending CN101378850A (en) | 2006-02-21 | 2006-11-21 | Enhancement of remote plasma source clean for dielectric films |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101378850A (en) |
Cited By (94)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543844A (en) * | 2010-12-30 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device structure and semiconductor device structure |
| CN103219226A (en) * | 2013-04-09 | 2013-07-24 | 上海华力微电子有限公司 | Method for reducing metal pollution on back of wafer during sedimentation of amorphous carbon film |
| CN103219227A (en) * | 2013-04-09 | 2013-07-24 | 上海华力微电子有限公司 | Plasma cleaning method |
| CN103648789A (en) * | 2011-07-01 | 2014-03-19 | 太阳化学工业株式会社 | Primer composition, structure comprising primer layer that is formed of primer composition, and method for producing structure |
| CN104981895A (en) * | 2013-02-08 | 2015-10-14 | 应用材料公司 | Semiconductor processing systems having multiple plasma configurations |
| CN106835063A (en) * | 2015-12-03 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | The clean method of SACVD chambers |
| CN107004560A (en) * | 2014-11-26 | 2017-08-01 | 应用材料公司 | Promote the method and system of process uniformity |
| US9837284B2 (en) | 2014-09-25 | 2017-12-05 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
| US9837249B2 (en) | 2014-03-20 | 2017-12-05 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
| US9842744B2 (en) | 2011-03-14 | 2017-12-12 | Applied Materials, Inc. | Methods for etch of SiN films |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
| US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
| US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
| US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
| US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
| US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
| US10186428B2 (en) | 2016-11-11 | 2019-01-22 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
| US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
| US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
| US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
| US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
| US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
| US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| CN111433896A (en) * | 2017-10-03 | 2020-07-17 | 马特森技术有限公司 | Surface treatment of silicon or silicon germanium surfaces using organic radicals |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| CN113498442A (en) * | 2019-02-11 | 2021-10-12 | 应用材料公司 | Method of cleaning a processing chamber |
| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| CN114975066A (en) * | 2022-07-25 | 2022-08-30 | 拓荆科技(北京)有限公司 | Deposition chamber and cleaning method thereof |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
-
2006
- 2006-11-21 CN CNA2006800530463A patent/CN101378850A/en active Pending
Cited By (133)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543844B (en) * | 2010-12-30 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device structure and semiconductor device structure |
| CN102543844A (en) * | 2010-12-30 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device structure and semiconductor device structure |
| US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US10062578B2 (en) | 2011-03-14 | 2018-08-28 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
| US9842744B2 (en) | 2011-03-14 | 2017-12-12 | Applied Materials, Inc. | Methods for etch of SiN films |
| CN103648789B (en) * | 2011-07-01 | 2015-11-25 | 太阳诱电化学科技株式会社 | Paint base composition, comprise the structure of the prime coat be made up of said composition and prepare the method for this structure |
| CN103648789A (en) * | 2011-07-01 | 2014-03-19 | 太阳化学工业株式会社 | Primer composition, structure comprising primer layer that is formed of primer composition, and method for producing structure |
| US10062587B2 (en) | 2012-07-18 | 2018-08-28 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
| US10032606B2 (en) | 2012-08-02 | 2018-07-24 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
| US11264213B2 (en) | 2012-09-21 | 2022-03-01 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10354843B2 (en) | 2012-09-21 | 2019-07-16 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US9978564B2 (en) | 2012-09-21 | 2018-05-22 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| CN104981895A (en) * | 2013-02-08 | 2015-10-14 | 应用材料公司 | Semiconductor processing systems having multiple plasma configurations |
| US11024486B2 (en) | 2013-02-08 | 2021-06-01 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US10424485B2 (en) | 2013-03-01 | 2019-09-24 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| CN103219226A (en) * | 2013-04-09 | 2013-07-24 | 上海华力微电子有限公司 | Method for reducing metal pollution on back of wafer during sedimentation of amorphous carbon film |
| CN103219226B (en) * | 2013-04-09 | 2015-12-02 | 上海华力微电子有限公司 | The method of wafer rear metallic pollution when being reduced in deposited amorphous carbon film |
| CN103219227A (en) * | 2013-04-09 | 2013-07-24 | 上海华力微电子有限公司 | Plasma cleaning method |
| US9837249B2 (en) | 2014-03-20 | 2017-12-05 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
| US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
| US9885117B2 (en) | 2014-03-31 | 2018-02-06 | Applied Materials, Inc. | Conditioned semiconductor system parts |
| US10465294B2 (en) | 2014-05-28 | 2019-11-05 | Applied Materials, Inc. | Oxide and metal removal |
| US9837284B2 (en) | 2014-09-25 | 2017-12-05 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US10707061B2 (en) | 2014-10-14 | 2020-07-07 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US10796922B2 (en) | 2014-10-14 | 2020-10-06 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US10593523B2 (en) | 2014-10-14 | 2020-03-17 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US10490418B2 (en) | 2014-10-14 | 2019-11-26 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US11239061B2 (en) | 2014-11-26 | 2022-02-01 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| CN107004560A (en) * | 2014-11-26 | 2017-08-01 | 应用材料公司 | Promote the method and system of process uniformity |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| CN107004560B (en) * | 2014-11-26 | 2020-08-21 | 应用材料公司 | Method and system for improving process uniformity |
| US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
| US10468285B2 (en) | 2015-02-03 | 2019-11-05 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US11594428B2 (en) | 2015-02-03 | 2023-02-28 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
| US11158527B2 (en) | 2015-08-06 | 2021-10-26 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10468276B2 (en) | 2015-08-06 | 2019-11-05 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US10147620B2 (en) | 2015-08-06 | 2018-12-04 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US10607867B2 (en) | 2015-08-06 | 2020-03-31 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US10424463B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US10424464B2 (en) | 2015-08-07 | 2019-09-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US11476093B2 (en) | 2015-08-27 | 2022-10-18 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| CN106835063B (en) * | 2015-12-03 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | The clean method of SACVD chamber |
| CN106835063A (en) * | 2015-12-03 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | The clean method of SACVD chambers |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US11735441B2 (en) | 2016-05-19 | 2023-08-22 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10224180B2 (en) | 2016-10-04 | 2019-03-05 | Applied Materials, Inc. | Chamber with flow-through source |
| US11049698B2 (en) | 2016-10-04 | 2021-06-29 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10541113B2 (en) | 2016-10-04 | 2020-01-21 | Applied Materials, Inc. | Chamber with flow-through source |
| US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10319603B2 (en) | 2016-10-07 | 2019-06-11 | Applied Materials, Inc. | Selective SiN lateral recess |
| US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
| US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10770346B2 (en) | 2016-11-11 | 2020-09-08 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10186428B2 (en) | 2016-11-11 | 2019-01-22 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
| US10600639B2 (en) | 2016-11-14 | 2020-03-24 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| US10903052B2 (en) | 2017-02-03 | 2021-01-26 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
| US10325923B2 (en) | 2017-02-08 | 2019-06-18 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10529737B2 (en) | 2017-02-08 | 2020-01-07 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
| US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US11361939B2 (en) | 2017-05-17 | 2022-06-14 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
| US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
| US10468267B2 (en) | 2017-05-31 | 2019-11-05 | Applied Materials, Inc. | Water-free etching methods |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10593553B2 (en) | 2017-08-04 | 2020-03-17 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US11101136B2 (en) | 2017-08-07 | 2021-08-24 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| CN111433896B (en) * | 2017-10-03 | 2023-04-21 | 玛特森技术公司 | Surface treatment of silicon or silicon germanium surfaces with organic radicals |
| CN111433896A (en) * | 2017-10-03 | 2020-07-17 | 马特森技术有限公司 | Surface treatment of silicon or silicon germanium surfaces using organic radicals |
| US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
| US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
| US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10861676B2 (en) | 2018-01-08 | 2020-12-08 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10699921B2 (en) | 2018-02-15 | 2020-06-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10615047B2 (en) | 2018-02-28 | 2020-04-07 | Applied Materials, Inc. | Systems and methods to form airgaps |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US11004689B2 (en) | 2018-03-12 | 2021-05-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| CN113498442A (en) * | 2019-02-11 | 2021-10-12 | 应用材料公司 | Method of cleaning a processing chamber |
| CN114975066B (en) * | 2022-07-25 | 2022-10-25 | 拓荆科技(北京)有限公司 | Deposition chamber cleaning method |
| CN114975066A (en) * | 2022-07-25 | 2022-08-30 | 拓荆科技(北京)有限公司 | Deposition chamber and cleaning method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101378850A (en) | Enhancement of remote plasma source clean for dielectric films | |
| US7581549B2 (en) | Method for removing carbon-containing residues from a substrate | |
| CN106992114B (en) | High temperature atomic layer deposition of silicon-containing films | |
| KR100656770B1 (en) | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials | |
| KR100667723B1 (en) | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials | |
| US7780865B2 (en) | Method to improve the step coverage and pattern loading for dielectric films | |
| US20070207275A1 (en) | Enhancement of remote plasma source clean for dielectric films | |
| KR100760891B1 (en) | Method for enhancing fluorine utilization | |
| KR20180035929A (en) | Methods for improving the film-in-particle performance of amorphous boron-carbon hard mask processes in PECVD systems | |
| US20040011380A1 (en) | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials | |
| US20060144820A1 (en) | Remote chamber methods for removing surface deposits | |
| US20080216958A1 (en) | Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same | |
| CN105719949A (en) | Selective Nitride Etch | |
| WO2007118026A2 (en) | Step coverage and pattern loading for dielectric films | |
| CN100461344C (en) | Method for removing carbon-containing residues from a substrate | |
| TW202012682A (en) | Methods for making silicon containing films that have high carbon content | |
| US20040045577A1 (en) | Cleaning of processing chambers with dilute NF3 plasmas | |
| JP2007531289A (en) | Remote chamber method for removing surface deposits | |
| KR20080018810A (en) | Detecting the endpoint of a cleaning process | |
| US20230272525A1 (en) | Method of in situ ceramic coating deposition | |
| Nicolazo et al. | Study of oxygen/TEOS plasmas and thin SiOx films obtained in an helicon diffusion reactor | |
| US8932406B2 (en) | In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use | |
| EP2944385A1 (en) | A process for etching and chamber cleaning and a gas therefor | |
| US20060144819A1 (en) | Remote chamber methods for removing surface deposits | |
| Park et al. | 69‐1: Etch Properties of Silicon Nitride Films Using a New In‐Line Equipment with Atmospheric Glow Plasma for the OLED Flexible Display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: American California Applicant after: Applied Materials Inc. Address before: American California Applicant before: Applied Materials Inc. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20090304 |