CN106835063B - The clean method of SACVD chamber - Google Patents
The clean method of SACVD chamber Download PDFInfo
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- CN106835063B CN106835063B CN201510881898.2A CN201510881898A CN106835063B CN 106835063 B CN106835063 B CN 106835063B CN 201510881898 A CN201510881898 A CN 201510881898A CN 106835063 B CN106835063 B CN 106835063B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of clean method of SACVD chamber, comprising: provide SACVD chamber, the SACVD chamber has chamber lid and the heating pedestal below the chamber lid；First cleaning is carried out to the SACVD chamber, in first cleaning, the spacing of the chamber lid and the heating pedestal is the first spacing；After carrying out the first cleaning, the second cleaning is carried out to the SACVD chamber, in second cleaning, for the heating pedestal close to SACVD cavity bottom, the spacing of the chamber lid and the heating pedestal is the second spacing, and first spacing is less than second spacing.Using the clean method of the SACVD chamber, the film layer of the SACVD cavity bottom and cavity wall is reduced into the etching injury to cavity wall while clean.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of clean methods of SACVD chamber.
Background technique
Sub- aumospheric pressure cvd (SACVD) technique refers to carrying out reaction gas in chamber pressure when deposition reaction
Strong is a kind of chemical vapour deposition reaction of 500torr~600torr.Sub- aumospheric pressure cvd technique has preferable rank
Terraced covering power and trench filling capacity, and its reaction process is pure chemistry reaction, does not generate plasma damage.Based on above-mentioned
Advantage, sub- aumospheric pressure cvd technique are widely used in the preceding working procedure FEOL (Front- of semiconductor fabrication process
End-Of-Line the trench fill in), as filled and being formed interlayer dielectric layer mistake in fleet plough groove isolation structure to shallow trench
Interlayer dielectric layer in journey.
Using the substance of the film layer of SACVD depositing operation deposition to be usually silica, specifically, in sub-atmospheric pressure chemistry
It is vapor-deposited in the chamber of (SACVD), is deposited under the conditions of sub-atmospheric pressure using ozone and ethyl orthosilicate (TEOS) and form dioxy
SiClx.
During depositing the film layer in the SACVD chamber, it is easy to produce particle (particle), the particle
Presence the uniformity for the film layer to be formed is deteriorated, or influence subsequent deposition process in film quality, the particle
Source mainly due to also forming film layer in SACVD cavity bottom and cavity wall and chamber lid surface while depositing the film layer,
It is existing that peeling (peeling) is easy to happen when SACVD cavity bottom and cavity wall and the film layer on chamber lid surface accumulate to a certain extent
As to generate particle.Therefore need periodically cleaning SACVD chamber.
In the prior art, to cavity wall while by the film layer of the SACVD cavity bottom and cavity wall, all removal is clean
Etching injury is big.
Summary of the invention
Problems solved by the invention is to provide a kind of clean method of SACVD chamber, by the SACVD cavity bottom and chamber
All removal is clean for the film layer of wall, and reduces the etching injury to cavity wall.
To solve the above problems, the present invention provides a kind of clean method of SACVD chamber, comprising: SACVD chamber is provided,
The SACVD chamber has chamber lid and the heating pedestal below the chamber lid；It is clear that first is carried out to the SACVD chamber
Clean, in first cleaning, the spacing of the chamber lid and the heating pedestal is the first spacing；It is right after carrying out the first cleaning
The SACVD chamber carries out the second cleaning, and in second cleaning, the heating pedestal is described close to SACVD cavity bottom
The spacing of chamber lid and the heating pedestal is the second spacing, and first spacing is less than second spacing.
Optionally, first spacing is than the second spacing to when young 1/3.
Optionally, the spacing of the heating pedestal and SACVD cavity bottom is greater than 0 and is less than or equal to 400mil.
Optionally, in the first cleaning and the second cleaning, the temperature of the heating pedestal is 500 degrees Celsius~560 Celsius
Degree.
Optionally, in the first cleaning and the second cleaning, the pressure range of the SACVD chamber is 3torr~40torr.
Optionally, the clean gas that first cleaning and the second cleaning use is fluoro plasma.
Optionally, the flow of the fluoro plasma is 4000sccm~6000sccm.
Optionally, the gas that the fluoro plasma uses is generated as NF3, plasmarized power is 600 watts~1500
Watt.
Optionally, there is cavernous structure in the chamber lid, in second cleaning, the chamber lid is carried out at cooling
Reason.
Optionally, cooling processing is carried out to the chamber lid using cooling circulating water.
Optionally, after cooling processing, the temperature of the chamber lid is 200 degrees Celsius~300 degrees Celsius.
Optionally, the chamber pressure that first cleaning uses is the first pressure, the chamber pressure of the second cleaning use
It is by force the second pressure, first pressure is greater than or equal to the second pressure.
Optionally, first pressure is 20torr~40torr；Second pressure is 3torr~10torr.
Compared with prior art, technical solution of the present invention has the advantage that
Due to having carried out the first cleaning before the second cleaning, and the first spacing in the first cleaning is less than in the second cleaning
The second spacing, i.e. the spacing between chamber lid and the heating pedestal described in the first cleaning is less than described in the second cleaning
Spacing between chamber lid and the heating pedestal enables between clean gas more enters corresponding second in the first cleaning
Cavity space below heating pedestal away from position eliminates the cavity space below the heating pedestal of corresponding second spaced position
In most film layer, i.e., the most film layer of SACVD cavity bottom is removed, is increased to right in the first cleaning
Then the cleaning effect of SACVD cavity bottom cleans entire SACVD chamber by the second cleaning；Pass through the second cleaning
The remaining film layer of cavity wall and the remaining film layer of SACVD cavity bottom are all removed；It avoids due to only with the second cleaning pair
Caused by SACVD chamber clean when the film layer to SACVD cavity bottom and cavity wall removes clean, to the etching injury of cavity wall
Biggish defect.
Further, first spacing is than the second spacing to when young 1/3, if the difference phase of the first spacing and the second spacing
Less than the 1/3 of the second spacing, so that the first spacing is excessive, clean gas enters adding for corresponding second spaced position in the first cleaning
The amount of cavity space below hot radical seat enters under the heating pedestal of corresponding second spaced position with clean gas in the second cleaning
The difference of the amount of the cavity space of side is smaller, and sets the first spacing than the second spacing to when young 1/3, enables clean gas
Adequately enter the cavity space below the heating pedestal of corresponding second spaced position, it is right in the first cleaning to further increase
The cleaning effect of SACVD cavity bottom.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of SACVD chamber；
The flow chart of SACVD chamber cleaning processes in Fig. 2 first embodiment of the invention.
Specific embodiment
As described in background, the clean method of SACVD chamber in the prior art, by SACVD cavity bottom and chamber
The film layer of wall is big to the etching injury of cavity wall while all removal is clean.
It is studied for the clean method of SACVD chamber, in the prior art using the clean technique of a step to SACVD chamber
Room is cleaned, and the SACVD chamber has chamber lid and the heating pedestal below the chamber lid；Set the chamber lid and institute
The spacing for stating heating pedestal is 1990mil~2000mil, and chamber pressure is 2torr~10torr, and the temperature of heating pedestal is
It 500 degrees Celsius~560 degrees Celsius, then passes to clean gas and the SACVD chamber is cleaned.
When using the above method to SACVD chamber clean, by the film layer of SACVD cavity bottom and cavity wall, all removal is clean
While, main cause big to the etching injury of cavity wall are as follows: the spacing of the chamber lid and the heating pedestal be 1990mil~
Under conditions of 2000mil, the spacing of the chamber lid and the heating pedestal is close to chamber lid in SACVD chamber and the heating pedestal
Greatest limit spacing 2000mil, heating pedestal is close to the SACVD cavity bottom, so that the chamber below the heating pedestal
Room space very little causes clean gas to be difficult to adequately lead to SACVD cavity bottom into the cavity space below heating pedestal
Removal that cannot be more synchronous with the film layer of cavity wall is clean, as the critical moment for completely removing the film layer of cavity wall, the SACVD
There is also a large amount of film layers for cavity bottom, if increasing cleaning time, the film layer of the SACVD cavity bottom and cavity wall is whole
Removal is clean, will lead to the etching injury to cavity wall.It should be noted that when the heating pedestal and SACVD cavity bottom
When spacing is 0 and is less than or equal to 400mil, can there be the above problem.
On this basis, the present invention provides a kind of clean methods of SACVD chamber, carry out first before the second cleaning
Cleaning, the spacing described in the first cleaning between chamber lid and the heating pedestal are less than chamber lid and institute described in the second cleaning
The spacing between heating pedestal is stated, so that the film layer of the SACVD cavity bottom and cavity wall be removed completely, and is reduced to chamber
The etching injury of wall.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
First embodiment
Fig. 1 is the structural schematic diagram of SACVD chamber；The stream of SACVD chamber cleaning processes in Fig. 2 first embodiment of the invention
Cheng Tu.
It executes step S1: SACVD chamber is provided, the SACVD chamber has chamber lid and adding below the chamber lid
Hot radical seat.
Fig. 1 is the structural schematic diagram of SACVD chamber.
With reference to Fig. 1, SACVD chamber 1 has chamber lid 101 and the heating pedestal 103 positioned at 101 lower section of chamber lid；Heating
Pedestal 103 is used to place wafer 104 in SACVD depositing operation, and the heating device (not shown) in heating pedestal 103 is right
SACVD chamber 1 is heated, and heating pedestal 103 is connect with the mobile bearing 105 for being located at 103 lower section of heating pedestal, mobile bearing
105 control the spacing between heating pedestal 103 and chamber lid 101 by moving up and down；Chamber lid 101 has fringe region and center
Region, the central area of chamber lid 101 have the cavernous structure (not shown) through 101 thickness of chamber lid, the fringe region of chamber lid 101
With hollow annular structure (not shown)；The cavernous structure includes multiple discrete through-holes through 101 thickness of chamber lid；Chamber lid
101 upper surface is connect with admission line 102, described that the preceding body gas needed in processing procedure is passed through chamber lid 101 into pipeline 102
In cavernous structure be introduced into SACVD chamber 1；The bottom of SACVD chamber 1 is connected with exhaust passage 106, and exhaust passage 106 is used
In by the by-product gas generated in processing procedure be discharged SACVD chamber 1.
There is preferable gradient coating performance and trench filling capacity, the film layer using the film layer that SACVD chamber 1 deposits
Material be silica, specifically, in SACVD chamber 1, using ozone and ethyl orthosilicate (TEOS) in sub-atmospheric pressure condition
Lower deposition forms the film layer, and the temperature of heating pedestal 103 is 500 degrees Celsius~560 degrees Celsius during the deposition process, chamber lid
Spacing between 101 and heating pedestal 103 is 200mil~400mil, and chamber pressure is 500torr~600torr.
During depositing the film layer in the SACVD chamber 1, also can SACVD chamber 1 101 surface of chamber lid,
Cavity wall and cavity bottom form the film layer, when the film layer of the chamber lid surface of SACVD chamber 101, cavity wall and cavity bottom
It is easy to happen peeling (peeling) phenomenon when accumulating to a certain extent, so that particle is generated, so that the film layer formed is equal
Even property is deteriorated, or influences subsequent depositing operation.Therefore it needs periodically to clean after depositing the film layer in SACVD chamber 1
SACVD chamber 1.
Step S2 is executed, the first cleaning is carried out to the SACVD chamber 1, in first cleaning, the chamber lid 101
Spacing with the heating pedestal 103 is the first spacing.
First cleaning in, be passed through clean gas and SACVD chamber 1 cleaned, the clean gas used for fluorine etc. from
Daughter, the flow of the fluoro plasma are 4000sccm~6000sccm；The fluoro plasma is using outside SACVD chamber 1
The plasma device in portion generates, and generates the gas that the fluoro plasma uses as NF3, plasmarized power is 600 watts
~1500 watts.
First spacing is set as in the adjustable range of SACVD chamber 1, and the first spacing be less than it is subsequent in the second cleaning
The value of second spacing.The clean gas in the first cleaning is enabled more to enter the heating pedestal for corresponding to the second spaced position
The cavity space of lower section eliminates the most film in the cavity space below the heating pedestal of corresponding second spaced position
Layer, increases the cleaning effect to 1 bottom of SACVD chamber.In the present embodiment, first spacing is set as and in SACVD chamber
Chamber lid 101 is consistent with the spacing that heating pedestal 103 is kept when depositing the film layer in room 1, so that sinking in SACVD chamber 1
After the product film layer, the spacing without adjusting chamber lid 101 and heating pedestal 103 can be carried out the first cleaning, simplify technique
Step saves the process time.Specifically, first spacing is 200mil~400mil.
In the first cleaning, the temperature of heating pedestal 103 is set according to the material of film layer to be cleaned, the film layer
Material be silica, the temperature of specific heating pedestal can be set as 450 degrees Celsius~600 degrees Celsius.
Preferably, the temperature of heating pedestal 103 is set as and deposits in SACVD chamber 1 film layer in the first cleaning
When heating pedestal 103 keep temperature it is consistent so that after depositing the film layer in SACVD chamber 1 do not have to adjust heating base
The temperature of seat 103 can be carried out the first cleaning, avoid heating up to SACVD chamber 1 or being cooled down and needed by too long
Time saves the process time, simplifies processing step.Specifically, the temperature of heating pedestal 103 is set as in the first cleaning
500 degrees Celsius~560 degrees Celsius, keep heating pedestal 103 temperature-resistant and right after the film layer is deposited in SACVD chamber 1
SACVD chamber 1 carries out the first cleaning.
The pressure of SACVD chamber 1 is the first pressure in first cleaning, and the first pressure is set according to process requirement, first
The range of pressure is 3torr~40torr, and the range by adjusting the first pressure can adjust clean gas in SACVD chamber 1
With the reaction rate of the film layer.It should be noted that the first pressure can be greater than the second pressure used in subsequent second cleaning
By force, it can also be less than in subsequent second cleaning equal to the second pressure or the first pressure used in subsequent second cleaning and use
The second pressure.In the present embodiment, the first pressure is equal to the second pressure used in subsequent second cleaning, specifically, the first pressure
Strong numerical value is set as 3torr~10torr.
Step S3 is executed, after carrying out the first cleaning, the second cleaning is carried out to the SACVD chamber 1, in second cleaning
In, for the heating pedestal 103 close to 1 bottom of SACVD chamber, the spacing of the chamber lid 101 and the heating pedestal 103 is second
Spacing, first spacing are less than second spacing.
Second cleaning in, be passed through clean gas and SACVD chamber 1 cleaned, the clean gas used for fluorine etc. from
Daughter, the flow of the fluoro plasma are 4000sccm~6000sccm；The fluoro plasma is using outside SACVD chamber 1
The plasma device in portion generates, and generates the gas that the fluoro plasma uses as NF3, plasmarized power is 600 watts
~1500 watts.
In the second cleaning, the heating pedestal 103 close to 1 bottom of SACVD chamber, specifically, heating pedestal 103 with
The spacing of 1 bottom of SACVD chamber is greater than 0 and is less than or equal to 400mil.
In the second cleaning, the temperature of heating pedestal 103 is set according to the material of film layer to be cleaned, the film layer
Material be silica, the temperature of specific heating pedestal can be set as 450 degrees Celsius~600 degrees Celsius.
Preferably, the temperature of heating pedestal 103 is set as in the second cleaning and heating pedestal 103 is kept in the first cleaning
Temperature it is consistent so that the temperature for not having to adjust heating pedestal 103 after carrying out the first cleaning in SACVD chamber 1 can be into
Row second cleans, and avoids heating up to SACVD chamber 1 or being cooled down and need to save the process time by the too long time,
Simplify processing step.Specifically, the temperature of heating pedestal 103 is set as 500 degrees Celsius~560 degrees Celsius in the second cleaning,
It keeps SACVD chamber 1 temperature-resistant after carrying out the first cleaning in SACVD chamber 1 and the second cleaning is carried out to SACVD chamber 1.
The pressure of SACVD chamber 1 is the second pressure in second cleaning, and the second pressure is set according to process requirement, the
The range of two pressure is 3torr~40torr, can adjust clean gas and institute in SACVD chamber 1 by adjusting the second pressure
State the reaction rate of film layer.In the present embodiment, the pressure of SACVD chamber 1 is selected as and SACVD in the first cleaning in the second cleaning
The pressure of chamber 1 is consistent, i.e. the second pressure is equal to the first pressure, so that not having to the pressure for adjusting SACVD chamber 1 after the first cleaning
It can be carried out the second cleaning by force, avoid the pressure to SACVD chamber 1 from being adjusted and need to save by the too long time
Process time, simplify processing step.Specifically, in the present embodiment, when the first pressure is 3torr~10torr, second
Pressure set is 3torr~10torr, keeps the pressure of SACVD chamber 1 constant after the first cleaning is carried out in SACVD chamber 1
And the second cleaning is carried out to SACVD chamber 1.It should be noted that in other embodiments, the second pressure can be greater than the first pressure
Strong or the second pressure is less than the first pressure.
The spacing of chamber lid 101 and the heating pedestal 103 is the second spacing, and the first spacing is less than second spacing.
Due to having carried out the first cleaning between the second cleaning, and the first spacing in the first cleaning is less than in the second cleaning
The second spacing, i.e. the spacing between chamber lid 101 and the heating pedestal 103 described in the first cleaning is less than in the second cleaning
Described in spacing between chamber lid 101 and the heating pedestal 103, enable in the first cleaning clean gas more into
The cavity space for entering 103 lower section of heating pedestal of corresponding second spaced position, eliminates the heating base of corresponding second spaced position
Most film layer in the cavity space of 103 lower section of seat, increases the cleaning effect to 1 bottom of SACVD chamber, then passes through
Entire SACVD chamber 1 is cleaned in second cleaning；It cleans by second by 1 bottom of the remaining film layer of cavity wall and SACVD chamber
Remaining film layer all removes；It avoids due to working as caused by being cleaned only with the second cleaning to SACVD chamber 1 to SACVD chamber 1
When the film layer of bottom and cavity wall removes clean, to the biggish defect of the etching injury of cavity wall.
Preferably, first spacing is than the second spacing to when young 1/3, if the difference of the first spacing and the second spacing is mutually small
In the 1/3 of the second spacing, so that the first spacing is excessive, clean gas enters the heating of corresponding second spaced position in the first cleaning
The amount of the cavity space of 103 lower section of pedestal enters the heating pedestal of corresponding second spaced position with clean gas in the second cleaning
The difference of the amount of the cavity space of 103 lower sections is smaller, and sets the first spacing than the second spacing to when young 1/3, so that cleaning gas
Body can adequately enter the cavity space of 103 lower section of heating pedestal of corresponding second spaced position, further increase first
To the cleaning effect of 1 bottom of SACVD chamber in cleaning.
Specifically, for example, the first spacing is smaller than the second spacing 1/3, the first spacing smaller than the second spacing 2/3 or first
Spacing is smaller than the second spacing by 3/4.If the first spacing is too small, so that heating pedestal 103 is to the clean gas being passed through from chamber lid 101
It causes to stop, reduces the efficiency that clean gas in the first cleaning enters 1 bottom of SACVD chamber.Between the first spacing is than second
When away from small 2/3, the efficiency that clean gas enters 1 bottom of SACVD chamber in the first cleaning reaches maximum value, right in the first cleaning
The cleaning effect of 1 bottom of SACVD chamber is optimal, so that when the film to SACVD chamber 1 bottom and cavity wall in the second cleaning
It is minimum to the etching injury of cavity wall when layer removes clean.
Second embodiment
The difference of second embodiment and first embodiment is: in the second cleaning, carrying out at cooling to the chamber lid 101
Reason.The part being identical with the first embodiment about second embodiment is no longer described in detail.
There is cavernous structure, specifically, chamber lid 101 has fringe region and central area, chamber lid in the chamber lid 101
101 central area has the cavernous structure through 101 thickness of chamber lid, and the cavernous structure has multiple through the chamber lid
The through-hole of 101 thickness.
Under conditions of each parameter that first embodiment uses, due to having cavernous structure, the poroid knot in chamber lid 101
Structure has multiple through-holes through 101 thickness of chamber lid, so that the cleaning that the cavernous structure inner wall contacts under unit area
The amount of gas is less than the amount of the clean gas of 101 surface of the chamber lid contact under unit area, so that clean gas is to chamber lid 101
The clean rate of the film layer on surface is greater than clean gas to the clean rate of the film layer of the cavernous structure inner wall, and due to described
The temperature of heating pedestal keeps consistent with the temperature of heating pedestal when depositing the film layer in SACVD depositing operation, cleans gas
The reaction rate of the film layer on 101 surface of body and chamber lid and the reaction rate of clean gas and the film layer of the cavernous structure inner wall
It is larger, so that clean gas is to the clean rate and clean gas of the film layer on 101 surface of chamber lid to the cavernous structure inner wall
Film layer clean rate difference it is larger, when the critical moment that the film layer on 101 surface of chamber lid has been cleaned, the cavernous structure
Inner wall is also remained and has not been cleaned compared with multiple film layer, when the film layer on 101 surface of chamber lid and the cavernous structure inner wall has cleaned,
Serious etching injury can be caused to 101 surface of chamber lid.
In order to which the film layer of the film layer on 101 surface of chamber lid and the cavernous structure inner wall has been cleaned and has been avoided to chamber lid
Serious etching injury is caused on 101 surfaces, in the present embodiment, by carrying out cooling processing to chamber lid 101 in the second cleaning, makes
Obtain the reaction rate of the film layer on 101 surface of clean gas and chamber lid and clean gas and the cavernous structure in the second cleaning
The clean rate of the film layer of inner wall reduces, so that clean rate and cleaning gas of the clean gas to the film layer on 101 surface of chamber lid
Body reduces the difference of the clean rate of the film layer of the cavernous structure inner wall.
Specifically, cooling processing is carried out to chamber lid 101 using cooling circulating water, by 101 fringe region of chamber lid
It is passed through cooling circulating water in empty cyclic structure to cool down to chamber lid 101, after cooling processing, the temperature of the chamber lid 101 is 200 Celsius
~300 degrees Celsius of degree.
In the present embodiment, clean process is carried out to SACVD chamber using the first cleaning and the second cleaning are as follows: the first cleaning
The distance between middle chamber lid 101 and heating pedestal 103 less than second cleaning in the distance between chamber lid 101 and heating pedestal 103,
Than heating pedestal 103 in being cleaned second closer to chamber lid 101 in the first cleaning, and not to chamber lid in the first cleaning
101 carry out cooling processing, so that the first cleansing phase process clean for second, clean gas and 101 surface of chamber lid and cleaning
The reaction rate of the film layer of gas and the cavernous structure inner wall is fast, and first cleans 101 surface of chamber lid and the cavernous structure
Most of film layer of inner wall removes, and increases process efficiency；Then in the second cleaning, the second spacing is greater than the base of the first spacing
On plinth, cooling processing is carried out to chamber lid 101, so that there is slower reaction rate, so that cleaning between clean gas and film layer
Gas is to the clean rate of the film layer on 101 surface of chamber lid and clean gas to the clean rate of the film layer of the cavernous structure inner wall
Difference reduce, will be removed on 101 surface of chamber lid and the remaining film layer of the cavernous structure inner wall by the second cleaning, so that working as
When the film layer of 101 surface of chamber lid and the cavernous structure inner wall has cleaned, the etching injury to 101 surface of chamber lid is reduced.
In the present embodiment, when the temperature of heating pedestal in the first cleaning and the second cleaning is 500 degrees Celsius~560 degrees Celsius
When, the temperature of heating pedestal is higher, and there are differences by making between the first spacing and the second spacing, so that heating pedestal 103
The heat for being radiated chamber lid 101 changes obvious, and do not carry out cooling processing to chamber lid 101 in the first cleaning, and second cleans
Cooling processing has been carried out to chamber lid 101 so that first cleaning in 101 surface of clean gas and chamber lid reaction rate and second
The difference of the reaction rate on 101 surface of clean gas and chamber lid is larger in cleaning, clean gas and described poroid in the first cleaning
The reaction rate of inner structural wall and the difference of clean gas and the reaction rate of the cavernous structure inner wall in the second cleaning are larger.
It is higher to the clean rate on 101 surface of chamber lid and the cavernous structure inner wall in the first cleaning, using the less time by chamber lid
Most of film layer of 101 surfaces and the cavernous structure inner wall is clean, and in the second cleaning, using lower reaction speed
Rate is clean by 101 surface of chamber lid and the remaining film layer of cavernous structure inner wall.
It should be noted that the first pressure is equal to the second pressure in the present embodiment.
3rd embodiment
The difference of 3rd embodiment and second embodiment is: first pressure is greater than second pressure.About
Three embodiments part identical with second embodiment is no longer described in detail.
In the present embodiment, the value of the first pressure is set greater than to the second pressure in the second cleaning in the first cleaning
Value, so that the first cleansing phase process more clean than second, the film of clean gas and 101 surface of chamber lid and the cavernous structure inner wall
The reaction rate of layer is further speeded up, and removes the film on most of 101 surface of chamber lid and the cavernous structure inner wall in the first cleaning
During layer, the process time used is reduced, and increases process efficiency.
Specifically, in one embodiment, the value of the first pressure is set as 20torr~40torr in the first cleaning, second
The value of the second pressure is set as 3torr~10torr in cleaning.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (10)
1. a kind of clean method of SACVD chamber characterized by comprising
SACVD chamber is provided, the SACVD chamber has chamber lid and the heating pedestal below the chamber lid；
First cleaning is carried out to the SACVD chamber, in first cleaning, the spacing of the chamber lid and the heating pedestal
For the first spacing；
After carrying out the first cleaning, the second cleaning is carried out to the SACVD chamber, in second cleaning, the heating pedestal
Close to SACVD cavity bottom, the spacing of the chamber lid and the heating pedestal is the second spacing, and first spacing is than described the
Two spacing are to when young 2/3；
The chamber pressure that first cleaning uses is the first pressure, and the chamber pressure that second cleaning uses is the second pressure
By force, first pressure is equal to the second pressure.
2. the clean method of SACVD chamber according to claim 1, which is characterized in that the heating pedestal and SACVD chamber
The spacing of room bottom is greater than 0 and is less than or equal to 400mil.
3. the clean method of SACVD chamber according to claim 1, which is characterized in that in the first cleaning and the second cleaning, institute
The temperature for stating heating pedestal is 500 degrees Celsius~560 degrees Celsius.
4. the clean method of SACVD chamber according to claim 1, which is characterized in that in the first cleaning and the second cleaning, institute
The pressure range for stating SACVD chamber is 3torr~40torr.
5. the clean method of SACVD chamber according to claim 1, which is characterized in that first cleaning and the second cleaning are adopted
Clean gas is fluoro plasma.
6. the clean method of SACVD chamber according to claim 5, which is characterized in that the flow of the fluoro plasma is
4000sccm~6000sccm.
7. the clean method of SACVD chamber according to claim 5, which is characterized in that generate what the fluoro plasma used
Gas is NF3, plasmarized power is 600 watts~1500 watts.
8. the clean method of SACVD chamber according to claim 1, which is characterized in that have poroid knot in the chamber lid
Structure carries out cooling processing to the chamber lid in second cleaning.
9. the clean method of SACVD chamber according to claim 8, which is characterized in that using cooling circulating water to described
Chamber lid carries out cooling processing.
10. the clean method of SACVD chamber according to claim 9, which is characterized in that after cooling processing, the chamber lid
Temperature be 200 degrees Celsius~300 degrees Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510881898.2A CN106835063B (en) | 2015-12-03 | 2015-12-03 | The clean method of SACVD chamber |
Applications Claiming Priority (1)
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| US4960488A (en) * | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
| CN101378850A (en) * | 2006-02-21 | 2009-03-04 | 应用材料股份有限公司 | Enhancement of remote plasma source clean for dielectric films |
| CN102623298A (en) * | 2011-01-30 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of reaction chamber |
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| DE10219108A1 (en) * | 2002-04-29 | 2004-01-29 | Advanced Micro Devices, Inc., Sunnyvale | Highly efficient remote cleaning process for process chambers in separation plants |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4960488A (en) * | 1986-12-19 | 1990-10-02 | Applied Materials, Inc. | Reactor chamber self-cleaning process |
| CN101378850A (en) * | 2006-02-21 | 2009-03-04 | 应用材料股份有限公司 | Enhancement of remote plasma source clean for dielectric films |
| CN102623298A (en) * | 2011-01-30 | 2012-08-01 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of reaction chamber |
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