CN101378101B - 在p型Ⅲ-V氮化物材料上制造低电阻率欧姆接触的方法 - Google Patents
在p型Ⅲ-V氮化物材料上制造低电阻率欧姆接触的方法 Download PDFInfo
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- CN101378101B CN101378101B CN2007101680233A CN200710168023A CN101378101B CN 101378101 B CN101378101 B CN 101378101B CN 2007101680233 A CN2007101680233 A CN 2007101680233A CN 200710168023 A CN200710168023 A CN 200710168023A CN 101378101 B CN101378101 B CN 101378101B
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- ohmic contact
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- contact layer
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 51
- 239000000463 material Substances 0.000 title description 42
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims description 56
- 230000008569 process Effects 0.000 claims description 25
- 239000007789 gas Substances 0.000 claims description 15
- 229910000510 noble metal Inorganic materials 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- 125000002524 organometallic group Chemical group 0.000 claims description 7
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 12
- 239000000956 alloy Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010948 rhodium Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 229910019080 Mg-H Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000344 low-energy electron-beam lithography Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNPCT/CN2007/002617 | 2007-08-31 | ||
CNPCT/CN2007/00261.7 | 2007-08-31 | ||
PCT/CN2007/002617 WO2009026749A1 (en) | 2007-08-31 | 2007-08-31 | Method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semiconductor material at low temperature |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101378101A CN101378101A (zh) | 2009-03-04 |
CN101378101B true CN101378101B (zh) | 2010-06-02 |
Family
ID=40386650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101680233A Expired - Fee Related CN101378101B (zh) | 2007-08-31 | 2007-11-02 | 在p型Ⅲ-V氮化物材料上制造低电阻率欧姆接触的方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8431475B2 (zh) |
EP (1) | EP2201613A1 (zh) |
JP (1) | JP2010537436A (zh) |
KR (1) | KR20100065147A (zh) |
CN (1) | CN101378101B (zh) |
WO (1) | WO2009026749A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9214352B2 (en) | 2010-02-11 | 2015-12-15 | Cree, Inc. | Ohmic contact to semiconductor device |
US8563372B2 (en) * | 2010-02-11 | 2013-10-22 | Cree, Inc. | Methods of forming contact structures including alternating metal and silicon layers and related devices |
US9548206B2 (en) | 2010-02-11 | 2017-01-17 | Cree, Inc. | Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features |
WO2014115060A1 (en) * | 2013-01-24 | 2014-07-31 | Koninklijke Philips N.V. | Control of p-contact resistance in a semiconductor light emitting device |
CN104201256B (zh) * | 2014-08-26 | 2017-09-26 | 中国科学院半导体研究所 | 低电阻率低温p型铝镓氮材料的制备方法 |
CN104332545A (zh) * | 2014-09-02 | 2015-02-04 | 中国科学院半导体研究所 | 低电阻率p型铝镓氮材料及其制备方法 |
JP6538339B2 (ja) | 2014-12-12 | 2019-07-03 | 株式会社Joled | 有機el素子および有機el素子の製造方法 |
CN105355730B (zh) * | 2015-12-10 | 2017-11-28 | 厦门乾照光电股份有限公司 | 一种提高深紫外发光二极管p型激活效率的方法 |
US20210257463A1 (en) * | 2018-06-20 | 2021-08-19 | Lawrence Livermore National Security, Llc | Field assisted interfacial diffusion doping through heterostructure design |
CN112647061B (zh) * | 2020-12-16 | 2022-05-13 | 福建兆元光电有限公司 | 一种mocvd机台复机方法 |
Citations (5)
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---|---|---|---|---|
EP1255291A2 (en) * | 2001-04-30 | 2002-11-06 | LumiLeds Lighting U.S., LLC | Forming low resistivity P-type gallium nitride |
CN1606177A (zh) * | 2003-10-08 | 2005-04-13 | 三星电子株式会社 | 氮化物基发光器件及其制造方法 |
CN1617365A (zh) * | 2003-11-14 | 2005-05-18 | 三星电子株式会社 | 氮化物基发光装置及其制造方法 |
CN1638165A (zh) * | 2003-12-24 | 2005-07-13 | 三星电子株式会社 | 氮化物发光装置及其制备方法 |
CN1787235A (zh) * | 2004-12-08 | 2006-06-14 | 方大集团股份有限公司 | 改善氮化镓基半导体发光二极管欧姆接触的合金方法 |
Family Cites Families (22)
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US5523623A (en) * | 1994-03-09 | 1996-06-04 | Matsushita Electric Industrial Co., Ltd. | Ohmic electrode for a p-type compound semiconductor and a bipolar transistor incorporating the ohmic electrode |
JPH0851235A (ja) * | 1994-08-09 | 1996-02-20 | Rohm Co Ltd | 半導体発光素子の製法 |
JP3423175B2 (ja) * | 1997-02-24 | 2003-07-07 | 三洋電機株式会社 | 発光素子の製造方法 |
JP3344296B2 (ja) * | 1997-10-21 | 2002-11-11 | 昭和電工株式会社 | 半導体発光素子用の電極 |
JP3509514B2 (ja) * | 1997-11-13 | 2004-03-22 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の製造方法 |
JPH11298040A (ja) * | 1998-04-10 | 1999-10-29 | Sharp Corp | 半導体発光素子及びその製造方法 |
JP3794876B2 (ja) * | 1998-09-09 | 2006-07-12 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6287947B1 (en) * | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
JP2001144324A (ja) * | 1999-11-12 | 2001-05-25 | Sharp Corp | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
US6447604B1 (en) * | 2000-03-13 | 2002-09-10 | Advanced Technology Materials, Inc. | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
JP4618465B2 (ja) * | 2000-04-04 | 2011-01-26 | ソニー株式会社 | p型窒化物系III−V族化合物半導体の製造方法および半導体素子の製造方法 |
JP2002075910A (ja) * | 2000-08-24 | 2002-03-15 | Sharp Corp | 窒化物系iii−v族化合物半導体装置用電極構造の作製方法 |
WO2002080225A2 (en) * | 2001-03-30 | 2002-10-10 | Technologies And Devices International Inc. | Method and apparatus for growing submicron group iii nitride structures utilizing hvpe techniques |
US6734091B2 (en) * | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
TW540170B (en) * | 2002-07-08 | 2003-07-01 | Arima Optoelectronics Corp | Ohmic contact structure of semiconductor light emitting device and its manufacturing method |
JP4063050B2 (ja) * | 2002-10-31 | 2008-03-19 | 豊田合成株式会社 | p型III族窒化物系化合物半導体の電極およびその製造方法 |
EP1561247B1 (en) * | 2002-11-16 | 2012-07-25 | LG Innotek Co., Ltd. | Light emitting device and fabrication method thereof |
JP3795007B2 (ja) * | 2002-11-27 | 2006-07-12 | 松下電器産業株式会社 | 半導体発光素子及びその製造方法 |
US20040175904A1 (en) * | 2003-03-04 | 2004-09-09 | Bor-Jen Wu | Method for activating P-type semiconductor layer |
JP2003347592A (ja) * | 2003-06-16 | 2003-12-05 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体発光素子の製造方法 |
JP4868821B2 (ja) * | 2005-10-21 | 2012-02-01 | 京セラ株式会社 | 窒化ガリウム系化合物半導体及び発光素子 |
CN101295758B (zh) * | 2007-04-29 | 2013-03-06 | 晶能光电(江西)有限公司 | 含有碳基衬底的铟镓铝氮发光器件以及其制造方法 |
-
2007
- 2007-08-31 US US12/159,835 patent/US8431475B2/en not_active Expired - Fee Related
- 2007-08-31 EP EP07800834A patent/EP2201613A1/en not_active Withdrawn
- 2007-08-31 KR KR1020107003887A patent/KR20100065147A/ko not_active Application Discontinuation
- 2007-08-31 WO PCT/CN2007/002617 patent/WO2009026749A1/en active Application Filing
- 2007-08-31 JP JP2010522159A patent/JP2010537436A/ja active Pending
- 2007-11-02 CN CN2007101680233A patent/CN101378101B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1255291A2 (en) * | 2001-04-30 | 2002-11-06 | LumiLeds Lighting U.S., LLC | Forming low resistivity P-type gallium nitride |
CN1606177A (zh) * | 2003-10-08 | 2005-04-13 | 三星电子株式会社 | 氮化物基发光器件及其制造方法 |
CN1617365A (zh) * | 2003-11-14 | 2005-05-18 | 三星电子株式会社 | 氮化物基发光装置及其制造方法 |
CN1638165A (zh) * | 2003-12-24 | 2005-07-13 | 三星电子株式会社 | 氮化物发光装置及其制备方法 |
CN1787235A (zh) * | 2004-12-08 | 2006-06-14 | 方大集团股份有限公司 | 改善氮化镓基半导体发光二极管欧姆接触的合金方法 |
Non-Patent Citations (1)
Title |
---|
JP特开2003-347592A 2003.12.05 |
Also Published As
Publication number | Publication date |
---|---|
WO2009026749A1 (en) | 2009-03-05 |
JP2010537436A (ja) | 2010-12-02 |
EP2201613A1 (en) | 2010-06-30 |
CN101378101A (zh) | 2009-03-04 |
KR20100065147A (ko) | 2010-06-15 |
US20100219394A1 (en) | 2010-09-02 |
US8431475B2 (en) | 2013-04-30 |
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GR01 | Patent grant | ||
CI01 | Correction of invention patent gazette |
Correction item: National priority number Correct: PCT/CN2007/002617 False: PCT/CN2007/00261.7 Number: 22 Volume: 26 |
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CI02 | Correction of invention patent application |
Correction item: National priority number Correct: PCT/CN2007/002617 False: PCT/CN2007/00261.7 Number: 22 Page: The title page Volume: 26 |
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Free format text: CORRECT: OWN COUNTRY NUMBER OF PRIORITY; FROM: PCT/CN2007/00261.7 TO: PCT/CN2007/002617 |
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Granted publication date: 20100602 Termination date: 20181102 |