CN101359607A - Method for forming metal film on surface of elastic lug - Google Patents
Method for forming metal film on surface of elastic lug Download PDFInfo
- Publication number
- CN101359607A CN101359607A CNA2007101434690A CN200710143469A CN101359607A CN 101359607 A CN101359607 A CN 101359607A CN A2007101434690 A CNA2007101434690 A CN A2007101434690A CN 200710143469 A CN200710143469 A CN 200710143469A CN 101359607 A CN101359607 A CN 101359607A
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- CN
- China
- Prior art keywords
- metal film
- forming metal
- elastic lug
- conductive layer
- weld pad
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
The invention mainly discloses a formation process of a metallic film at the surface of an elastic bump. Firstly, an elastic seat is developed on an integrated circuit, arranged corresponding to a weld pad; then a photoresist pattern is formed around the elastic seat from liftable photoresist through coating, exposing and developing; at least one conducting layer is formed on the elastic seat and the photoresist pattern around the elastic seat through metallization process like sputter or vapor deposition, ensuring that the conducting layer is able to be connected with the weld pad, a hitching interface at the top of the elastic seat and a probing surface ; and finally, the photoresist pattern, together with the conducting layer covered thereon, is removed by a photoresist remover, thus developing a metallic film on the surface of the elastic bump. The invention can reach the purpose of precisely controlling the width of the surface metallic film while not causing short circuit and is applicable on fine-pitch products.
Description
Technical field
The elastic projection forming metal film on surface technology of the relevant a kind of integrated circuit package of the present invention is providing a kind of method for forming metal film on surface of elastic lug that helps being applied in thin space (fine pitch) product.
Background technology
The structure dress of liquid crystal display-driving IC, generally be on the input and output weld pad of all crystal grain of wafer (chip), to make metal coupling earlier, again after tested, after the cutting metal coupling is engaged with counter electrode point on glass substrate (COG) or the soft glue material substrate (TCP, COF), finish the structure dress of module.
For in response to high-resolution, demand cheaply, liquid crystal display-driving IC is just towards multiway number, narrow square development, with the Channel number that promotes every IC and IC number of each wafer.Use the conventional metals projection when the thin space structure is adorned, because of the metal coupling sidewall also can conduct electricity, the ACF conducting particles in the gap of adjacent two metal couplings very easily causes the short circuit of this two electrode if clustering (Conglomerate) phenomenon is arranged.Moreover, for adorning demand in response to the thin space structure, ACF conducting particles particle diameter dwindles, for keeping the interelectrode low contact impedance of metal coupling and face glass ITO, the coplanarity of each metal coupling height and the roughness requirement of single metal coupling among IC, will be above the ability of electroplating process, and need to import as processing procedures such as metal coupling grinding wafers.But for the short circuit problem that the adjacent metal projection causes because of the clustering of ACF conducting particles, metal bump structure does not still have effective improvement method at present.Hereat, the exploitation of elastic projection structure has been arranged, utilize the flexible characteristics of its Z axle tool on the one hand, can adorn at structure and make Z axle strain in the pressing process, and reduction when making the projection top conductive layer, is used forming techniques such as gold-tinted, etching on the one hand for the requirement of bump height coplanarity and lug surface roughness, remove the metal film of elastic projection sidewall, effectively avoided conducting particles clustering formed short-circuiting effect in the gap of adjacent two projections.
Elastic projection is mainly by the elasticity pedestal that is formed on integrated circuit package composition surface ad-hoc location, and be connected in each spring support surface with its metal film on surface between the corresponding weld pad constitute; Wherein, this elasticity pedestal 21 can have three kinds of aspects in the position on integrated circuit package 10 composition surfaces: first kind of aspect is shown in Figure 1A, and elasticity pedestal 21 is formed directly on the weld pad 12; Second kind of aspect is that elasticity pedestal 21 is formed on the sheath 11 of weld pad 12 peripheries, shown in Figure 1B; The third aspect is that elasticity pedestal 21 is to be formed on simultaneously on weld pad 12 and the sheath 11, shown in Fig. 1 C.
The elastic projection metal film on surface manufacturing process of commonly using as for elastic projection consists essentially of as Fig. 2 to step shown in Figure 6; With first kind of aspect is example, and at first as shown in Figure 2, the composition surface that elasticity pedestal 21 is formed on integrated circuit package 10 is with respect on the weld pad 12; Again as shown in Figure 3, utilize physical gas phase deposition technology to form one deck at least in top, the composition surface of this integrated circuit package 10 and be connected in conductive layer 22 between each elasticity pedestal 21 and each weld pad 12, this conductive layer 22 comprises bottom can conduct electricity adhesion layer 221 and top layer conductive layer 222; Then as shown in Figure 4, finish the photoresistance pattern 23 that covers in order to the conductive layer on each elasticity pedestal 21 zone 22 with developing technique; Afterwards as shown in Figure 5, utilize etching technique to remove not to be coated with the conductive layer 22 of photoresistance pattern 23, only keep the conductive layer 22 that extends to corresponding weld pad 12 in the zone of each elasticity pedestal 21; At last as shown in Figure 6, photoresistance pattern 23 is removed, the conductive layer in each elasticity pedestal 21 zone is exposed, and become in order to constitute the metal film on surface 22 ' that electrically conducts of integrated circuit package 10.
Since on take off the photoresistance pattern line-width of commonly using in the manufacturing process, but need consider the scope of application (process window) of processing procedure operating condition in developing technique and the etching technique, therefore the spacing of adjacent two photoresistance patterns need certain width can be fully that the conductive layer etching that is not coated with photoresistance is clean in order to etch process, and on etch process, must note especially in addition and may form undercutting (Undercut) down in shielding (Mask), the problem that causes the pattern line-width distortion, therefore be subjected to developing and the influence of etch process, the spacing of the actual adjacent two elastic projection metal film on surface of making is quite big, is applied on the product of thin space (fine pitch) comparatively difficulty.
Figure 7 shows that the virtual comparison diagram of integration of commonly using the central above-mentioned Fig. 2 to Fig. 6 of photoresistance pattern forming framework; wherein if the space D 1 of light mask image 30 is 4 μ m; its photoresistance pattern 23 must cover whole elastic projection 21 and conductive layer 22; can protect conductive layer 22 to avoid etched medicament corrodes; therefore on the developing manufacture process of thick film photoresistance; need higher exposure energy and long developing time can produce the light resistance structure of high-aspect-ratio (high aspect ratio); photoresistance pattern 23 space D 2 after so developing will expand to about 8 μ m; then, utilize iodine (I with top layer conductive layer (for example gold)
2) and KI (KI) solution carry out etching, the space D 3 of the top layer conductive layer 222 after the etching more will expand to about 12 μ m, next then must the photoresistance pattern be spent after the photoresist removal earlier, again bottom adhesion layer 221 (for example titanium-tungsten TiW) be utilized hydrogen peroxide (H
2O
2) etching, cause bottom adhesion layer 221 every limits can form the undercutting D4 (Undercut) of nearly 0.5 μ m, therefore cause the pattern line-width distortion.
Moreover if etch process adopts the mode of Wet-type etching (wet etching) to carry out, because the etch-rate of wafer periphery and crystal circle center is different, the dimensional homogeneity of conductive layer is also desirable not as expection.
Summary of the invention
Main purpose of the present invention is promptly providing a kind of method for forming metal film on surface of elastic lug that helps being applied in thin space (fine pitch) product; Take off purpose on reaching, method for forming metal film on surface of elastic lug includes the following step basically in regular turn:
A) be formed with elasticity pedestal with the corresponding configuration of weld pad on the composition surface of integrated circuit package; B) can lift from formula (lift-off) photoresist utilization coating, exposure, developing manufacture process, form the photoresistance pattern in elasticity pedestal periphery; C) utilize physical gas phase deposition technology on the photoresistance pattern of elasticity pedestal and periphery thereof, to form one deck conductive layer at least, and make this conductive layer be connected weld pad and elasticity pedestal; D) utilize the photoresistance remover that the photoresistance pattern is removed together with the conductive layer that covers on the photoresistance pattern at last, the elastic projection metal film on surface that can have corresponding with it respectively weld pad to be connected in each spring support surface construction.
Particularly, the present invention has following effect:
1. the present invention uses the shape of act from formula photoresistance definition elastic projection metal film on surface, only needs after finishing the metal deposition processing procedure, will lift just to peel off from the formula photoresistance and can finish the surface metal film figure.
2. utilize processing procedure of the present invention, can accurately control the width of elastic projection metal film on surface and improve its dimensional homogeneity, and then can be applicable on thin space (fine pitch) product.
3. the conductive layer edge of each elastic projection metal film on surface does not have the problem that undercutting (Undercut) is corroded in the middle of the present invention.
Description of drawings
Figure 1A, B, C are that general elasticity pedestal is in the position view on integrated circuit package composition surface;
The metal film on surface manufacturing flow chart that Fig. 2～Fig. 6 commonly uses for elastic projection;
Fig. 7 commonly uses the central photoresistance pattern forming Organization Chart of processing procedure for the elastic projection metal film on surface;
Fig. 8～Figure 10 is an elastic projection metal film on surface manufacturing flow chart of the present invention;
Figure 11 is the photoresistance pattern forming Organization Chart in the middle of the elastic projection metal film on surface processing procedure of the present invention.
[figure number explanation]
10 integrated circuit packages, 11 sheaths
12 weld pads, 20 elastic projections
21 elasticity pedestals, 22 conductive layers
22 ' metal film on surface, 221 bottom adhesion layers
222 top layer conductive layers, 23 photoresistance patterns
30 light mask images
Embodiment
Characteristics of the present invention can be consulted the detailed description of the graphic and embodiment of this case and obtained to be well understood to.
The forming metal film on surface processing procedure that the present invention is primarily aimed in the middle of the elastic projection is improved; Wherein, each elastic projection includes an elasticity pedestal, and be connected in spring support surface and this elasticity pedestal the elastic projection metal film on surface between the corresponding I/O weld pad, see through the elastic projection metal film on surface and constitute electrically conducting of integrated circuit package and external circuit.
As for, emphasis of the present invention mainly is to utilize developing technique, keep or remove the lifting of ad-hoc location from the formula photoresist, make on the composition surface of integrated circuit package and be formed with the photoresistance pattern that separates in order to each elastic projection metal film on surface, with the width that reaches accurate control surface metal film and improve the elastic projection metal film on surface manufacturing process of metal film on surface dimensional homogeneity, help being applied in the integrated circuit package product of the liquid crystal display-driving IC etc. of thin space (fine pitch).
To shown in Figure 10, the molding manufacture procedure of integral surface metal film is essentially silicon wafer process and includes the following step in regular turn as Fig. 8:
A, at first be formed with elasticity pedestal 21 with weld pad 12 corresponding configurations on the surface of integrated circuit package 10, as shown in Figure 8, the material of its elasticity pedestal 21 is a kind ofly to be electrically insulated and to have elastomeric macromolecule organic (organic polymer), as Polyimide (polyimide), benzocyclobutene (benego cyclobutene), polyacrylate (polyacrylates), rubber (rubber), silica gel (silicone) etc., as for its position that sets three kinds of aspects as the aforementioned, present embodiment is an example with first kind of aspect, being formed directly on the weld pad 12, but should be with limitation the present invention.
B, can lift from the formula photoresist and be coated on all surface of integrated circuit package 10, and utilize exposure, developing technique, keep or remove the lifting of integrated circuit package composition surface ad-hoc location from formula photoresistance (as shown in Figure 8, can lift be positioned at elasticity pedestal periphery) from the formula photoresistance; Wherein, can lift from the formula photoresist and can optionally select to use " positive photoresistance " or " negative photoresistance ", that is utilize the moon in the similar engraving to carve or sun skill at quarter, cooperate stopping of light mask image, remove or figure that reservation is corresponding or complementary with light mask image, main purpose is to keep lifting from the formula photoresistance of integrated circuit package composition surface ad-hoc location, make on the composition surface of integrated circuit package with respect to forming in elasticity pedestal periphery in order to each elastic projection metal film on surface being separated the photoresistance pattern 23 of (in Fig. 8, forming as yet), and this photoresistance pattern 23 is through coating, the exposure and the adjustment of developing manufacture process parameter and be trapezoidal.
C, utilize physical gas phase deposition technology on all surface of integrated circuit package 10, to form one deck conductive layer 22 (as shown in Figure 9) at least, and make this conductive layer 22 be connected weld pad 12, the structure dress composition surface and the pin at elasticity pedestal 21 tops are surveyed the surface, when implementing, its bottom adhesion layer 221 and top layer conductive layer 222 materials can be titanium-tungsten (TiW), titanium, nickel, chromium or its alloy and copper, gold, its mesexine conductive layer 222 materials are with Jin Weijia, and non-limiting use sputter technology or adopt evaporation coating technique that conductive layer 22 is established on the photoresistance pattern 23 of elasticity pedestal 21 and periphery thereof.
D, utilize the photoresistance remover with the lip-deep photoresistance pattern of integrated circuit package at last, remove together with the conductive layer that covers on the photoresistance pattern, as shown in figure 10, can the metal film on surface 22 ' that be connected with pairing weld pad 12 respectively be arranged in each elasticity pedestal 21 surperficial construction.
According to this, promptly form a plurality of I/O elastic projections 20 on the composition surface of whole integrated circuit package 10, seeing through elastic projection 20 engages with external circuit, and then constitute electrically conducting of integrated circuit package and external circuit, especially the composition surface of integrated circuit package is engaged in after the external circuit, and the spring support bulk absorption crystal grain that can utilize elastic projection and substrate joint interface are because of the different thermal stress that produce of both thermal coefficient of expansions.
In the middle of above-mentioned forming metal film on surface processing procedure, the pattern of each metal film on surface, do not need to finish through the etching and processing step, therefore simplify the manufacturing process of integral surface metal film, but again because be not subjected to the restriction of the processing procedure operating condition scope of application in gold-tinted and the etching technique in the middle of this new processing procedure, therefore the accurate dimensional homogeneity of the width of control surface metal film and raising conductive layer is fit to be applied on the product of thin space (fine pitch) especially.
Moreover, compare with identical light mask image spacing condition, with the virtual comparison diagram Figure 11 of the integration of virtual comparison diagram Fig. 7 of known integration and photoresistance pattern forming framework of the present invention relatively, if the spacing d1 of the light mask image 30 that the present invention uses is similarly 4 μ m, by lifting the photoresistance pattern 23 that constitutes from the formula photoresistance, about the about 5 μ m of the size d2 after the development, on the photoresistance pattern 23 after the moulding, utilize physical gas phase deposition technology to form conductive layer, remove the removing photoresistance pattern again after formed conductive layer spacing greatly about about 5 μ m.
Figure 11 compares with the photoresistance pattern framework that above-mentioned habit shown in Figure 7 is useful on etch process, the technology of the present invention is can be than 12 μ m of the resulting top layer of located by prior art conductive layer space D 3 little about 7 μ m (D3-d2), reach the effect of dwindling spacing, so the present invention is more suitable in the application of thin space (fine pitch) product.
Especially, the present invention needn't etch process, so the conductive layer edge of each metal film on surface does not have the problem that corrodes because of the undercutting (Undercut) that etch process causes.
Technology contents of the present invention and technical characterstic the sixth of the twelve Earthly Branches disclose as above, yet the personage who is familiar with this technology still may do various replacement and the modifications that do not deviate from this case invention spirit based on announcement of the present invention.Therefore, protection scope of the present invention should be not limited to those disclosed embodiments, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claim.
Claims (10)
1, a kind of method for forming metal film on surface of elastic lug includes the following step in regular turn:
A, be formed with the elasticity pedestal with the corresponding configuration of weld pad on the surface of integrated circuit package;
B, with photoresist utilization coating, exposure, developing manufacture process, form the photoresistance pattern in elasticity pedestal periphery;
C, utilize physical gas phase deposition technology on the photoresistance pattern of elasticity pedestal and periphery thereof, to form one deck conductive layer at least, and make this conductive layer be connected weld pad and elasticity pedestal;
D, utilize the photoresistance remover that the photoresistance pattern is removed together with the conductive layer that covers on the photoresistance pattern at last.
2, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein this photoresistance pattern is to be trapezoidal through the adjustment of coating, exposure and developing manufacture process parameter.
3, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein the material of this elasticity pedestal is a kind ofly to be electrically insulated and to have elastomeric macromolecule organic, and the material of this elasticity pedestal can be Polyimide, benzocyclobutene, polyacrylate, rubber or silica gel.
4, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein conductive can comprise titanium-tungsten, titanium, nickel, chromium or its alloy and copper, gold.
5, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein respectively this spring support body is formed on the weld pad.
6, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein respectively this spring support body is formed on the sheath of weld pad periphery.
7, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein respectively this spring support body is formed between weld pad and the sheath.
8, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein the visual conduction demand of this photoresistance pattern is between this elasticity pedestal.
9, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein this conductive layer comprises bottom adhesion layer and top layer conductive layer.
10, method for forming metal film on surface of elastic lug as claimed in claim 1, wherein this photoresist is for can lift from the formula photoresist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101434690A CN101359607A (en) | 2007-08-01 | 2007-08-01 | Method for forming metal film on surface of elastic lug |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101434690A CN101359607A (en) | 2007-08-01 | 2007-08-01 | Method for forming metal film on surface of elastic lug |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101359607A true CN101359607A (en) | 2009-02-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101434690A Pending CN101359607A (en) | 2007-08-01 | 2007-08-01 | Method for forming metal film on surface of elastic lug |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866899A (en) * | 2009-04-20 | 2010-10-20 | 奇景光电股份有限公司 | Semiconductor device |
| CN101969081A (en) * | 2009-07-27 | 2011-02-09 | 太聚能源股份有限公司 | Manufacturing method of photodiode device |
-
2007
- 2007-08-01 CN CNA2007101434690A patent/CN101359607A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101866899A (en) * | 2009-04-20 | 2010-10-20 | 奇景光电股份有限公司 | Semiconductor device |
| CN101969081A (en) * | 2009-07-27 | 2011-02-09 | 太聚能源股份有限公司 | Manufacturing method of photodiode device |
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Open date: 20090204 |