CN101329361A - Minitype silicon accelerometer having functions of measuring pressure intensity and temperature variation and its machining method - Google Patents
Minitype silicon accelerometer having functions of measuring pressure intensity and temperature variation and its machining method Download PDFInfo
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- CN101329361A CN101329361A CNA2008101237004A CN200810123700A CN101329361A CN 101329361 A CN101329361 A CN 101329361A CN A2008101237004 A CNA2008101237004 A CN A2008101237004A CN 200810123700 A CN200810123700 A CN 200810123700A CN 101329361 A CN101329361 A CN 101329361A
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Abstract
The invention provides a micro-silicon accelerometer which has the functions of measuring pressure and temperature. The micro-silicon accelerometer not only can measure the change of the pressure and the environment temperature of a system, but also can measure the acceleration; the invention also provides a processing method. The micro-silicon accelerometer comprises a silicon single-crystal underlay (1) of single crystallographic orientation; the two surfaces of the silicon underlay (1) are covered by a composite film insulation layer (2); the two cantilever beam areas of the frontal surface of the silicon single-crystal underlay (1) are provided with four heat diffusion resistances (3) so as to assemble a wheatstone bridge. The micro-silicon accelerometer is characterized in that a mass area which is connected with the two cantilever beams is a silicon mass block (4); furthermore, the frontal surface of the mass block (4) is provided with a multi-layer structure of silicon dioxide/PSG/polycrystalline silicon/silicon dioxide/polycrystalline silicon; wherein, the polycrystalline silicon on the top is prepared to be four force-sensitive resistances (5) with longitudinal piezoresistive effect; a middle polycrystalline film is an elastic film (6) of a pressure sensor; furthermore, the PSG and a phosphorosilicate glass layer which is arranged below the polycrystalline elastic film form a hollow chamber (11); an internal aluminium wire is connected with four force-sensitive resistances (5) with the longitudinal piezoresistive effect so as to assemble the wheatstone bridge used for measuring the pressure change; furthermore, a boron-phosphorus area is arranged on the frame of the accelerometer so as to assemble the EB-junction (7) of an n-p-n triode.
Description
(1) technical field
The present invention relates to have the minitype silicon accelerometer of measuring pressure, temperature variation function concurrently, the invention still further relates to the job operation of minitype silicon accelerometer.
(2) background technology
Usually accelerometer is a kind of independent devices, in order to measure acceleration.And pressure transducer and temperature sensing element have the device of doing together, such device both can measuring system pressure, variation that again can measures ambient temperature, scholar in the industry is in eight or five state key tacklings of key scientific and technical problems, applied for the minitype silicon accelerometer project, finish the acceptance index of national regulation, and only finished sample pipe hundreds of.Wherein two beams, four beams, five beams respectively have more than 100 of sample pipe.And, authorize the patent No. October 19 nineteen ninety in application on August 6th, 1988 utility model patent " twin islet-five girder construction monolithic silicon acceleration sensor ": 90215390.0, certificate number: No. 61778.And in 95 state key tacklings of key scientific and technical problems, realized through engineering approaches.It is the domestic unit that realizes the micro-silicon acceleration transducer the earliest.But do not find this three kinds of incorporate related articles of device and product up to now as yet,, more and more need microminiaturization and the multifunction and the intellectuality of sensor, to adapt to the development of mechanics of communication along with the development of infotech.
(3) summary of the invention
At the problems referred to above, the invention provides and have the minitype silicon accelerometer of measuring pressure, environment temperature function concurrently, it has microminiaturization, multifunction and intelligentized advantage, pressure that both can measuring system, the variation of environment temperature, can also measure acceleration, adapt to the development of modern communications technology, the present invention also provides the job operation of minitype silicon accelerometer for this reason.
Its technical scheme is such:
Have measurement pressure concurrently, the minitype silicon accelerometer of temperature variation function, it comprises the silicon monocrystalline substrate 1 in monolithic crystal orientation, be coated with composite membrane insulation course 2 on the two sides of silicon substrate 1, two semi-girder districts in silicon monocrystalline substrate 1 front are provided with four thermal diffusion resistance 3, form resistance bridge, it is characterized in that: the quality area that is connected with two semi-girders 9 is a silicon physique gauge block 4, and the sandwich construction of silicon dioxide/PSG/ polycrystalline silicon/silicon dioxide/polysilicon is set at the front surface of mass 4, wherein the polysilicon at top is made into the force sensing resistance 5 of four vertical piezoresistive effects, middle polysilicon membrane is the elastic membrane 6 of pressure transducer, and the phosphorosilicate glass layer below PSG and the polysilicon elastic membrane forms a cavity 11, the aluminium interior lines connect the force sensing resistance 5 of four vertical piezoresistive effects, form the resistance bridge that gaging pressure changes; And boron phosphorus district is set on the frame of accelerometer, form the EB knot 7 of a n-p-n triode.
It is further characterized in that: composite membrane insulation course 2 is made up of silicon dioxide and silicon nitride; The material of the thermal diffusion resistance 3 of minitype silicon accelerometer is that monocrystalline silicon resistance is made in thermal diffusion; The force sensing resistance 5 of described pressure transducer and the material of internal lead are polysilicon; The force sensing resistance material of the semi-girder of accelerometer is a monocrystalline silicon; The material of the elastic membrane 6 of pressure transducer is a polysilicon.
Have the job operation of the minitype silicon accelerometer of measuring pressure, variation of ambient temperature function concurrently, it is characterized in that: it may further comprise the steps,
Get a slice thickness and be the monocrystalline silicon in 0.3 micron-1 millimeter twin polishing crystal orientation and make substrate 1, form the dual surface lithography alignment mark earlier on the substrate two sides, continue oxidation then and go out square aperture 8 in the substrate back oxidation, with silicon face in the TMAH corrosive liquid corrosion square aperture 8, the degree of depth is 5 microns-10 microns;
Be coated with the composite membrane insulation course 2 that silicon dioxide and silicon nitride are formed on the two sides of silicon substrate;
Adopt oxidation, photoetching, thermal diffusion planar technology, form the EB knot 7 of four thermal diffusion P type resistance 3 and temperature sensing element n-p-n triode in two semi-girder districts in silicon chip front;
Front surface in the mass district, form the sandwich construction of silicon dioxide/PSG/ polycrystalline silicon/silicon dioxide/polysilicon, wherein the force sensing resistance 5 of the polysilicon at top in order to make four vertical piezoresistive effects adopts the ion beam machine to inject the boron atom, energy 100Kev, dosage 1.6 * 10
15, make it become P type resistive layer;
In the high-temperature oxydation stove of 1100 degree, make protection gas, silicon chip was carried out annealing in process 0.5 hour, by the adjusting of logical dried oxygen-wet oxygen-dried oxygen time, the polysilicon surface square resistance is reached about 80 ohm-100 ohm then with nitrogen;
Photoetching resistance terminal capitiform becomes the lead-in wire porose area of Ohmic electrode, carries out dense boron diffusion then in the lead-in wire porose area, forms ohmic contact regions;
Penetrating region 10 around photoetching front surface mass district and the semi-girder district;
Back side photoetching square aperture 8 and mass 4;
Alignment resistance terminal capitiform becomes the lead-in wire porose area of Ohmic electrode;
Adopt by sacrificial layer technology, empty the phosphorosilicate glass layer below the polysilicon elastic membrane, form a cavity 11;
Positive AM aluminum metallization film anti-carves and forms the aluminium internal lead, seals the corrosion mouth simultaneously;
Substrate back square aperture 8 is carried out body micromachined wet etching, when eroding to from surperficial 50um, be etched in the district that goes out around mass district, silicon chip front and the semi-girder district with the DRIE dry etching technology after treatment, communicate, form the present invention at last with the back side.
The present invention by above-mentioned technology making, when mass was made acceleration movement, four force sensing resistances in two semi-girder districts that are connected with mass were subjected to horizontal and vertical piezoresistive effect, made two resistance become big, two resistance decreasing cause the imbalance of bridge circuit.According to Newton second law: f=ma (the compressive stress or the stress that rises when wherein f is subjected to the mass motion for the semi-girder district; M is the quality size of mass; A is the acceleration magnitude of mass when doing accelerated motion), thus an electric signal that is directly proportional with acceleration produced at the output terminal of resistance bridge; And form the sandwich construction of silicon dioxide/PSG/ polycrystalline silicon/silicon dioxide/polysilicon at the front surface of mass, wherein the polysilicon at top is in order to make the force sensing resistance of four vertical piezoresistive effects, middle polysilicon membrane is the elastic membrane as pressure transducer, by the polysilicon force sensing resistance of four vertical piezoresistive effects of aluminium interior lines connection, form the resistance bridge that another gaging pressure changes; And because the EB knot is temperature variant thermal sensing element, when environment temperature raises Celsius 1 when spending, the forward voltage drop of EB knot will reduce by 2 millivolts, thereby obtain the electric signal output relevant with environment temperature, three kinds of different physical quantities (acceleration G, pressure P, temperature T) can be measured simultaneously, have realized that minitype silicon accelerometer is to microminiaturized and multifunction and intelligent direction development.
(4) description of drawings
The structural representation that Fig. 1 overlooks for the present invention;
Fig. 2 is the main structural representation of looking of the present invention;
Fig. 3 is a work flow block diagram of the present invention.
(5) embodiment
See Fig. 1, Fig. 2, Fig. 3, the present invention includes the silicon monocrystalline substrate 1 in monolithic crystal orientation, be coated with composite membrane insulation course 2 on the two sides of silicon substrate 1, composite membrane insulation course 2 is made up of silicon dioxide and silicon nitride; Two semi-girder districts in silicon monocrystalline substrate 1 front are provided with four thermal diffusion resistance 3, form resistance bridge, the quality area that is connected with two semi-girders is a silicon physique gauge block 4, and the sandwich construction of silicon dioxide/PSG/ polycrystalline silicon/silicon dioxide/polysilicon is set at the front surface of mass 4, wherein the polysilicon at top is made into the force sensing resistance 5 of four vertical piezoresistive effects, middle polysilicon membrane is the elastic membrane 6 of pressure transducer, and the phosphorosilicate glass layer below PSG and the polysilicon elastic membrane forms a cavity 11, the aluminium interior lines connect the force sensing resistance 5 of four vertical piezoresistive effects, form the resistance bridge that gaging pressure changes; And boron phosphorus district is set on the frame of accelerometer, form the EB knot 7 of a n-p-n triode.The material of the thermal diffusion resistance 3 of minitype silicon accelerometer is that monocrystalline silicon resistance is made in thermal diffusion; The force sensing resistance 5 of pressure transducer and the material of internal lead are polysilicon; The force sensing resistance material of the semi-girder of accelerometer is a monocrystalline silicon; The material of the elastic membrane 6 of pressure transducer is a polysilicon.
Have the job operation of the minitype silicon accelerometer of measuring pressure, variation of ambient temperature function concurrently, it may further comprise the steps,
Get a slice thickness and be the monocrystalline silicon in 0.3 millimeter-1 millimeter twin polishing crystal orientation and make substrate 1, adopt conventional oxidation photoetching process, form the dual surface lithography alignment mark earlier on the substrate two sides, continue oxidation then and go out square aperture 8 in the substrate back oxidation, with silicon face in the TMAH corrosive liquid corrosion square aperture 8, the degree of depth is 5 microns-10 microns;
Be coated with the composite membrane insulation course 2 that silicon dioxide and silicon nitride are formed on the two sides of silicon substrate;
Adopt oxidation, photoetching, thermal diffusion planar technology, form the EB knot 7 of four thermal diffusion P type resistance 3 and temperature sensing element n-p-n triode in two semi-girder districts in silicon chip front;
Front surface in the mass district, form the sandwich construction of silicon dioxide/PSG/ polycrystalline silicon/silicon dioxide/polysilicon, wherein the force sensing resistance 5 of the polysilicon at top in order to make four vertical piezoresistive effects adopts the ion beam machine to inject the boron atom, energy 100Kev, dosage 1.6 * 10
15, make it become P type resistive layer;
In the high-temperature oxydation stove of 1100 degree, make protection gas, silicon chip was carried out annealing in process 0.5 hour, by the adjusting of logical dried oxygen-wet oxygen-dried oxygen time, the polysilicon surface square resistance is reached about 80 ohm-100 ohm then with nitrogen;
Photoetching resistance terminal capitiform becomes the lead-in wire porose area of Ohmic electrode, carries out dense boron diffusion then in the lead-in wire porose area, forms ohmic contact regions;
Penetrating region 10 around photoetching front surface mass district and the semi-girder district;
Back side photoetching square aperture 8 and mass 4;
Alignment resistance terminal capitiform becomes the lead-in wire porose area of Ohmic electrode;
Adopt by sacrificial layer technology, empty the phosphorosilicate glass layer below the polysilicon elastic membrane, form a cavity 11;
Positive AM aluminum metallization film anti-carves and forms the aluminium internal lead, seals the corrosion mouth simultaneously;
Substrate back square aperture 8 is carried out body micromachined wet etching, when eroding to, be etched in the district that goes out around mass district, silicon chip front and the semi-girder district with the DRIE dry etching technology after treatment, communicate with the back side from surperficial 50um.Form the present invention at last.
Claims (7)
1, have measurement pressure concurrently, the minitype silicon accelerometer of temperature variation function, it comprises the silicon monocrystalline substrate (1) in monolithic crystal orientation, be coated with composite membrane insulation course (2) on the two sides of silicon substrate (1), two positive semi-girder districts of silicon monocrystalline substrate (1) are provided with four thermal diffusion resistance (3), form resistance bridge, it is characterized in that: the quality area that is connected with two semi-girders is a silicon physique gauge block (4), and the sandwich construction of silicon dioxide/PSG/ polycrystalline silicon/silicon dioxide/polysilicon is set at the front surface of mass (4), wherein the polysilicon at top is made into the force sensing resistance (5) of four vertical piezoresistive effects, middle polysilicon membrane is the elastic membrane (6) of pressure transducer, and the phosphorosilicate glass layer below PSG and the polysilicon elastic membrane forms a cavity 11, the aluminium interior lines connect the force sensing resistance (5) of four vertical piezoresistive effects, form the resistance bridge that gaging pressure changes; And boron phosphorus district is set on the frame of accelerometer, form the EB knot (7) of a n-p-n triode.
2, according to the described minitype silicon accelerometer of measuring pressure, temperature variation function that has concurrently of claim 1, it is characterized in that: composite membrane insulation course (2) is made up of silicon dioxide and silicon nitride.
3, according to the described minitype silicon accelerometer of measuring pressure, temperature variation function that has concurrently of claim 1, it is characterized in that: the material of the thermal diffusion resistance (3) of minitype silicon accelerometer is that monocrystalline silicon resistance is made in thermal diffusion.
4, according to the described minitype silicon accelerometer of measuring pressure, temperature variation function that has concurrently of claim 1, it is characterized in that: the material of force sensing resistance of described pressure transducer (5) and aluminium interior lines is a polysilicon.
5, according to the described minitype silicon accelerometer of measuring pressure, temperature variation function that has concurrently of claim 1, it is characterized in that: the force sensing resistance material of the semi-girder of accelerometer is a monocrystalline silicon.
6, according to the described minitype silicon accelerometer of measuring pressure, temperature variation function that has concurrently of claim 1, it is characterized in that: the material of the elastic membrane of pressure transducer (6) is a polysilicon.
7, have the job operation of the minitype silicon accelerometer of measuring pressure, temperature variation function concurrently, it is characterized in that: it may further comprise the steps,
Get a slice thickness and be the monocrystalline silicon in 0.3 millimeter-1 millimeter twin polishing crystal orientation and make substrate (1), form the dual surface lithography alignment mark earlier on the substrate two sides, continue oxidation then and go out square aperture (8) in the substrate back oxidation, with silicon face in the TMAH corrosive liquid corrosion square aperture (8), the degree of depth is 5 microns-10 microns;
Be coated with the composite membrane insulation course (2) that silicon dioxide and silicon nitride are formed on the two sides of silicon substrate;
Adopt oxidation, photoetching, thermal diffusion planar technology, form the EB knot (7) of four thermal diffusion P type resistance (3) and temperature sensing element n-p-n triode in two semi-girder districts in silicon chip front;
Front surface in the mass district, form the sandwich construction of silicon dioxide/PSG/ polycrystalline silicon/silicon dioxide/polysilicon, wherein the force sensing resistance (5) of the polysilicon at top in order to make four vertical piezoresistive effects adopts the ion beam machine to inject the boron atom, energy 100Kev, dosage 1.6 * 10
15, make it become P type resistive layer;
In the high-temperature oxydation stove of 1100 degree, make protection gas, silicon chip was carried out annealing in process 0.5 hour, by the adjusting of logical dried oxygen-wet oxygen-dried oxygen time, the polysilicon surface square resistance is reached about 80 ohm-100 ohm then with nitrogen;
Photoetching resistance terminal capitiform becomes the lead-in wire porose area of Ohmic electrode, carries out dense boron diffusion then in the lead-in wire porose area, forms ohmic contact regions;
Go out the district around photoetching front surface mass district and the semi-girder district;
Back side photoetching square aperture (8) and mass (4);
Alignment resistance terminal capitiform becomes the lead-in wire porose area of Ohmic electrode;
Adopt by sacrificial layer technology, empty the phosphorosilicate glass layer below the polysilicon elastic membrane, form a cavity (11);
Positive AM aluminum metallization film anti-carves and forms the aluminium internal lead, seals the corrosion mouth simultaneously;
Substrate back square aperture (8) is carried out body micromachined wet etching, when eroding to from surperficial 50um, be etched in the district that goes out around mass district, silicon chip front and the semi-girder district with the DRIE dry etching technology after treatment, communicate, form the present invention at last with the back side.
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