CN101257072A - 一种立体式空间分布电极的发光二极管及其制造方法 - Google Patents
一种立体式空间分布电极的发光二极管及其制造方法 Download PDFInfo
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- CN101257072A CN101257072A CNA2007101145474A CN200710114547A CN101257072A CN 101257072 A CN101257072 A CN 101257072A CN A2007101145474 A CNA2007101145474 A CN A2007101145474A CN 200710114547 A CN200710114547 A CN 200710114547A CN 101257072 A CN101257072 A CN 101257072A
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- gallium nitride
- layer
- type gallium
- epitaxial layer
- based epitaxial
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- 238000009826 distribution Methods 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 82
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 230000008020 evaporation Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 238000005234 chemical deposition Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
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CN2007101145474A CN101257072B (zh) | 2007-12-26 | 2007-12-26 | 一种立体式空间分布电极的发光二极管及其制造方法 |
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CN2007101145474A CN101257072B (zh) | 2007-12-26 | 2007-12-26 | 一种立体式空间分布电极的发光二极管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101257072A true CN101257072A (zh) | 2008-09-03 |
CN101257072B CN101257072B (zh) | 2010-12-15 |
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CN2007101145474A Active CN101257072B (zh) | 2007-12-26 | 2007-12-26 | 一种立体式空间分布电极的发光二极管及其制造方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097566A (zh) * | 2009-12-14 | 2011-06-15 | 首尔Opto仪器股份有限公司 | 具有电极焊盘的发光二极管 |
CN102315353A (zh) * | 2011-09-30 | 2012-01-11 | 厦门市三安光电科技有限公司 | 一种倒装集成发光二极管及其制备方法 |
CN103222074A (zh) * | 2010-11-18 | 2013-07-24 | 首尔Opto仪器股份有限公司 | 具有电极焊盘的发光二极管芯片 |
CN103840040A (zh) * | 2012-11-22 | 2014-06-04 | 株式会社东芝 | 半导体发光器件及其制造方法 |
CN104241488A (zh) * | 2009-12-28 | 2014-12-24 | 首尔伟傲世有限公司 | 发光二极管 |
CN104409465A (zh) * | 2014-11-20 | 2015-03-11 | 厦门乾照光电股份有限公司 | 一种高发光效率的高压发光二极管制作方法 |
CN104752452A (zh) * | 2015-03-20 | 2015-07-01 | 厦门乾照光电股份有限公司 | 一种具有立体发光结构的高压发光二极管制作方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
CN1218410C (zh) * | 2002-01-14 | 2005-09-07 | 联铨科技股份有限公司 | 具螺旋布置金属电极的氮化物发光二极管及其制造方法 |
US6650018B1 (en) * | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
-
2007
- 2007-12-26 CN CN2007101145474A patent/CN101257072B/zh active Active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105489728B (zh) * | 2009-12-14 | 2018-11-16 | 首尔伟傲世有限公司 | 具有电极焊盘的发光二极管 |
CN102097566A (zh) * | 2009-12-14 | 2011-06-15 | 首尔Opto仪器股份有限公司 | 具有电极焊盘的发光二极管 |
CN105489728A (zh) * | 2009-12-14 | 2016-04-13 | 首尔伟傲世有限公司 | 具有电极焊盘的发光二极管 |
CN104241488A (zh) * | 2009-12-28 | 2014-12-24 | 首尔伟傲世有限公司 | 发光二极管 |
CN103222074B (zh) * | 2010-11-18 | 2016-06-01 | 首尔伟傲世有限公司 | 具有电极焊盘的发光二极管芯片 |
CN103222074A (zh) * | 2010-11-18 | 2013-07-24 | 首尔Opto仪器股份有限公司 | 具有电极焊盘的发光二极管芯片 |
CN102315353B (zh) * | 2011-09-30 | 2013-05-22 | 安徽三安光电有限公司 | 一种倒装集成发光二极管及其制备方法 |
CN102315353A (zh) * | 2011-09-30 | 2012-01-11 | 厦门市三安光电科技有限公司 | 一种倒装集成发光二极管及其制备方法 |
CN103840040A (zh) * | 2012-11-22 | 2014-06-04 | 株式会社东芝 | 半导体发光器件及其制造方法 |
CN104409465A (zh) * | 2014-11-20 | 2015-03-11 | 厦门乾照光电股份有限公司 | 一种高发光效率的高压发光二极管制作方法 |
CN104409465B (zh) * | 2014-11-20 | 2017-02-22 | 厦门乾照光电股份有限公司 | 一种高发光效率的高压发光二极管制作方法 |
CN104752452A (zh) * | 2015-03-20 | 2015-07-01 | 厦门乾照光电股份有限公司 | 一种具有立体发光结构的高压发光二极管制作方法 |
CN104752452B (zh) * | 2015-03-20 | 2017-06-16 | 厦门乾照光电股份有限公司 | 一种具有立体发光结构的高压发光二极管制作方法 |
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Publication number | Publication date |
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CN101257072B (zh) | 2010-12-15 |
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Effective date of registration: 20080829 Address after: Siming District of Xiamen City, Fujian Province, Luling Road No. 1721-1725 Applicant after: Xiamen Sanan Optoelectronics Technology Co.,Ltd. Address before: Siming District of Xiamen City, Fujian Province, Luling Road No. 1721-1725 Applicant before: Xiamen San'an Electronics Co.,Ltd. |
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Effective date of registration: 20231103 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |