CN101887938B - 发光二极管芯片及其制造方法 - Google Patents
发光二极管芯片及其制造方法 Download PDFInfo
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CN101887938B true CN101887938B (zh) | 2012-11-21 |
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Families Citing this family (7)
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CN102214649B (zh) * | 2011-05-25 | 2013-03-13 | 映瑞光电科技(上海)有限公司 | 一种led封装结构及其制备方法 |
CN103794687B (zh) * | 2014-01-28 | 2017-06-06 | 圆融光电科技有限公司 | 氮化镓led制备方法、氮化镓led和芯片 |
CN104143598A (zh) * | 2014-07-22 | 2014-11-12 | 李媛 | 一种无衬底led芯片的电极结构 |
CN104157767B (zh) * | 2014-07-22 | 2017-07-14 | 李媛 | 一种具有不导电衬底的led芯片电极结构 |
CN104201269A (zh) * | 2014-08-29 | 2014-12-10 | 李媛 | 一种单侧电极芯片的led封装结构 |
CN104393137B (zh) * | 2014-09-30 | 2017-08-25 | 厦门市三安光电科技有限公司 | 一种倒装发光器件及其制作方法 |
CN105355747A (zh) * | 2015-10-28 | 2016-02-24 | 江苏新广联半导体有限公司 | 蓝宝石衬底单电极led芯片结构及其制备方法 |
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JP3274271B2 (ja) * | 1994-03-09 | 2002-04-15 | 株式会社東芝 | 半導体発光素子 |
JP3916726B2 (ja) * | 1997-05-27 | 2007-05-23 | 星和電機株式会社 | 化合物半導体発光素子 |
US20080315240A1 (en) * | 2006-08-31 | 2008-12-25 | Epivalley Co., Ltd. | III-Nitride Semiconductor light Emitting Device |
KR101327106B1 (ko) * | 2007-08-09 | 2013-11-07 | 엘지이노텍 주식회사 | 반도체 발광소자 |
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Owner name: ENRAY TEK OPTOELECTRONICS (SHANGHAI) CO., LTD. Free format text: FORMER OWNER: ZHANG RUJING Effective date: 20101125 |
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Free format text: CORRECT: ADDRESS; FROM: 201203 NO.7, LANE 168, QINGTONG ROAD, PUDONG NEW DISTRICT, SHANGHAI TO: 201203 ROOM 101, BUILDING 5, NO.200, NIUDUN ROAD, PUDONG NEW DISTRICT, SHANGHAI |
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Effective date of registration: 20101125 Address after: 201203 room 5, building 200, Newton Road, 101, Shanghai, Pudong New Area Applicant after: EnRay Tek Optoelectronics (Shanghai) Co., Ltd. Address before: 201203 Shanghai city Pudong New Area Tong Road 168 Lane No. 7 Applicant before: Zhang Rujing |
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Effective date of registration: 20190424 Address after: 2000 Hongyin Road, Pudong New District, Shanghai 1889 Patentee after: Shanghai Xianyao Display Technology Co., Ltd. Address before: Room 101, Building 5, 200 Newton Road, Pudong New Area, Shanghai, 201203 Patentee before: EnRay Tek Optoelectronics (Shanghai) Co., Ltd. |