CN101207164B - 高灵敏度光传感元件和使用该元件的光传感装置 - Google Patents
高灵敏度光传感元件和使用该元件的光传感装置 Download PDFInfo
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- CN101207164B CN101207164B CN2007101988511A CN200710198851A CN101207164B CN 101207164 B CN101207164 B CN 101207164B CN 2007101988511 A CN2007101988511 A CN 2007101988511A CN 200710198851 A CN200710198851 A CN 200710198851A CN 101207164 B CN101207164 B CN 101207164B
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006339745A JP2008153427A (ja) | 2006-12-18 | 2006-12-18 | 高感度光センサ素子及びそれを用いた光センサ装置 |
JP2006-339745 | 2006-12-18 | ||
JP2006339745 | 2006-12-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101207164A CN101207164A (zh) | 2008-06-25 |
CN101207164B true CN101207164B (zh) | 2010-12-22 |
Family
ID=39526114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101988511A Active CN101207164B (zh) | 2006-12-18 | 2007-12-14 | 高灵敏度光传感元件和使用该元件的光传感装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20080142920A1 (zh) |
JP (1) | JP2008153427A (zh) |
KR (1) | KR20080056648A (zh) |
CN (1) | CN101207164B (zh) |
TW (1) | TW200834906A (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200825563A (en) * | 2006-12-11 | 2008-06-16 | Innolux Display Corp | Light supply device and liquid crystal display device using the same |
WO2010100958A1 (ja) * | 2009-03-02 | 2010-09-10 | シャープ株式会社 | 表示装置 |
EP2448012B1 (en) * | 2009-06-26 | 2013-12-18 | Sharp Kabushiki Kaisha | Method of operating a PHOTOTRANSISTOR, AND A DISPLAYING DEVICE EQUIPPED THEREWITH |
KR101641618B1 (ko) | 2009-08-05 | 2016-07-22 | 삼성디스플레이 주식회사 | 가시광 차단 부재, 가시광 차단 부재를 포함하는 적외선 센서 및 적외선 센서를 포함하는 액정 표시 장치 |
JP5481127B2 (ja) * | 2009-08-19 | 2014-04-23 | 株式会社ジャパンディスプレイ | センサ素子およびその駆動方法、センサ装置、ならびに入力機能付き表示装置および電子機器 |
KR101610846B1 (ko) * | 2009-09-08 | 2016-04-11 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR101675841B1 (ko) * | 2009-12-21 | 2016-11-14 | 엘지디스플레이 주식회사 | 표시 장치의 포토 센서 및 이의 제조 방법 |
KR101672344B1 (ko) * | 2010-05-20 | 2016-11-04 | 삼성전자주식회사 | 광센싱 회로, 상기 광센싱 회로의 구동 방법, 및 상기 광센싱 회로를 채용한 광센싱 장치 |
TWI460611B (zh) * | 2010-06-07 | 2014-11-11 | Au Optronics Corp | 觸控鍵盤 |
US8530266B1 (en) * | 2012-07-18 | 2013-09-10 | Omnivision Technologies, Inc. | Image sensor having metal grid with a triangular cross-section |
TWI486563B (zh) | 2012-08-16 | 2015-06-01 | E Ink Holdings Inc | 光感測器及其光電晶體的驅動方法 |
TWI485372B (zh) * | 2012-11-16 | 2015-05-21 | Au Optronics Corp | 光感測電路及光感測之控制方法 |
EP3570325B1 (en) | 2017-01-12 | 2020-10-28 | Mitsubishi Electric Corporation | Infrared sensor substrate and infrared sensor device |
CN108231943B (zh) * | 2017-12-14 | 2020-05-15 | 上海集成电路研发中心有限公司 | 一种红外探测器及其制造方法 |
CN109004058B (zh) * | 2018-07-11 | 2020-06-30 | 浙江大学 | 一种具有光学栅极的锗沟道场效应晶体管器件及其制造方法 |
TW202332072A (zh) * | 2022-01-19 | 2023-08-01 | 友達光電股份有限公司 | 感測裝置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1341231A (zh) * | 1999-12-28 | 2002-03-20 | 松下电器产业株式会社 | Tft阵列基板及其制造方法以及使用它的液晶显示装置 |
CN1399166A (zh) * | 1995-11-17 | 2003-02-26 | 株式会社半导体能源研究所 | 显示器件 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0628310B2 (ja) * | 1986-12-25 | 1994-04-13 | キヤノン株式会社 | 光電変換装置 |
JPH028055U (zh) * | 1988-06-24 | 1990-01-18 | ||
JP3377853B2 (ja) * | 1994-03-23 | 2003-02-17 | ティーディーケイ株式会社 | 薄膜トランジスタの作製方法 |
JP3501379B2 (ja) * | 1994-10-18 | 2004-03-02 | Tdk株式会社 | 光源付きイメージセンサ |
US6617644B1 (en) * | 1998-11-09 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5046452B2 (ja) * | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW582118B (en) * | 2003-04-10 | 2004-04-01 | Au Optronics Corp | Asymmetry thin film transistor |
JP3981055B2 (ja) * | 2003-08-04 | 2007-09-26 | Tdk株式会社 | 光源付きイメージセンサ |
JP4737956B2 (ja) | 2003-08-25 | 2011-08-03 | 東芝モバイルディスプレイ株式会社 | 表示装置および光電変換素子 |
JP2005250454A (ja) * | 2004-02-06 | 2005-09-15 | Sanyo Electric Co Ltd | 光センサ付きディスプレイおよびその製造方法 |
JP2006186266A (ja) * | 2004-12-28 | 2006-07-13 | Toshiba Matsushita Display Technology Co Ltd | 光電変換素子及びこれを用いた表示装置 |
JP2006332287A (ja) * | 2005-05-25 | 2006-12-07 | Toshiba Matsushita Display Technology Co Ltd | 薄膜ダイオード |
-
2006
- 2006-12-18 JP JP2006339745A patent/JP2008153427A/ja active Pending
-
2007
- 2007-11-26 TW TW096144757A patent/TW200834906A/zh unknown
- 2007-12-13 KR KR1020070129884A patent/KR20080056648A/ko not_active Application Discontinuation
- 2007-12-14 CN CN2007101988511A patent/CN101207164B/zh active Active
- 2007-12-14 US US11/956,551 patent/US20080142920A1/en not_active Abandoned
-
2011
- 2011-09-19 US US13/236,338 patent/US8338867B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1399166A (zh) * | 1995-11-17 | 2003-02-26 | 株式会社半导体能源研究所 | 显示器件 |
CN1341231A (zh) * | 1999-12-28 | 2002-03-20 | 松下电器产业株式会社 | Tft阵列基板及其制造方法以及使用它的液晶显示装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20080056648A (ko) | 2008-06-23 |
US20120068287A1 (en) | 2012-03-22 |
TW200834906A (en) | 2008-08-16 |
CN101207164A (zh) | 2008-06-25 |
US8338867B2 (en) | 2012-12-25 |
TWI355737B (zh) | 2012-01-01 |
US20080142920A1 (en) | 2008-06-19 |
JP2008153427A (ja) | 2008-07-03 |
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Owner name: IPS ALPHA SUPPORT CO., LTD. Owner name: PANASONIC LCD CO., LTD. Free format text: FORMER OWNER: IPS ALPHA SUPPORT CO., LTD. |
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Effective date of registration: 20110928 Address after: Chiba County, Japan Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Patentee after: Hitachi Displays, Ltd. Address before: Chiba County, Japan Co-patentee before: IPS pioneer support society Patentee before: Hitachi Displays, Ltd. Effective date of registration: 20110928 Address after: Chiba County, Japan Co-patentee after: IPS Pioneer Support Society Patentee after: Hitachi Displays, Ltd. Address before: Chiba County, Japan Patentee before: Hitachi Displays, Ltd. |
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Address after: Tokyo port xixinqiao Japan three chome 7 No. 1 Patentee after: JAPAN DISPLAY Inc. Patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Address before: Chiba County, Japan Patentee before: Japan Display East Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |
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Application publication date: 20080625 Assignee: BOE TECHNOLOGY GROUP Co.,Ltd. Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd. Contract record no.: 2013990000688 Denomination of invention: Highly sensitive photo-sensing element and photo-sensing device using the same Granted publication date: 20101222 License type: Common License Record date: 20131016 |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231213 Address after: Tokyo, Japan Patentee after: JAPAN DISPLAY Inc. Patentee after: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA Address before: Tokyo port xixinqiao Japan three chome 7 No. 1 Patentee before: JAPAN DISPLAY Inc. Patentee before: Panasonic Liquid Crystal Display Co.,Ltd. |