CN101192493B - 阳极装置及其制造方法 - Google Patents
阳极装置及其制造方法 Download PDFInfo
- Publication number
- CN101192493B CN101192493B CN2006101569886A CN200610156988A CN101192493B CN 101192493 B CN101192493 B CN 101192493B CN 2006101569886 A CN2006101569886 A CN 2006101569886A CN 200610156988 A CN200610156988 A CN 200610156988A CN 101192493 B CN101192493 B CN 101192493B
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- China
- Prior art keywords
- tube
- carbon nano
- glass
- anode assembly
- slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 96
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 96
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 96
- 239000011521 glass Substances 0.000 claims abstract description 54
- 239000011248 coating agent Substances 0.000 claims abstract description 23
- 238000000576 coating method Methods 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims abstract 2
- 239000002002 slurry Substances 0.000 claims description 28
- 239000000843 powder Substances 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 239000005357 flat glass Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical class CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 claims description 6
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 6
- 239000001856 Ethyl cellulose Substances 0.000 claims description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 5
- 239000002238 carbon nanotube film Substances 0.000 claims description 5
- 229920001249 ethyl cellulose Polymers 0.000 claims description 5
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 5
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 230000005484 gravity Effects 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 claims description 2
- 239000004014 plasticizer Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 230000002269 spontaneous effect Effects 0.000 claims description 2
- 239000003381 stabilizer Substances 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 230000009514 concussion Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000002045 lasting effect Effects 0.000 description 2
- 238000009288 screen filtration Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000001241 arc-discharge method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/36—Solid anodes; Solid auxiliary anodes for maintaining a discharge
- H01J1/38—Solid anodes; Solid auxiliary anodes for maintaining a discharge characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/53—Electrodes intimately associated with a screen on or from which an image or pattern is formed, picked-up, converted, or stored
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/02—Electrodes other than control electrodes
- H01J2329/08—Anode electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (10)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006101569886A CN101192493B (zh) | 2006-11-22 | 2006-11-22 | 阳极装置及其制造方法 |
US11/875,110 US20080220242A1 (en) | 2006-11-22 | 2007-10-19 | Anodic structure and method for manufacturing same |
JP2007275371A JP4763673B2 (ja) | 2006-11-22 | 2007-10-23 | 陽極素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006101569886A CN101192493B (zh) | 2006-11-22 | 2006-11-22 | 阳极装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101192493A CN101192493A (zh) | 2008-06-04 |
CN101192493B true CN101192493B (zh) | 2011-02-02 |
Family
ID=39487406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101569886A Active CN101192493B (zh) | 2006-11-22 | 2006-11-22 | 阳极装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080220242A1 (zh) |
JP (1) | JP4763673B2 (zh) |
CN (1) | CN101192493B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN105676260B (zh) * | 2016-01-20 | 2018-05-08 | 西北核技术研究所 | 电子束箍缩过程诊断***及其诊断方法 |
JP6849224B2 (ja) * | 2016-10-10 | 2021-03-24 | 京東方科技集團股▲ふん▼有限公司Boe Technology Group Co.,Ltd. | 照明光源及びその製造方法 |
Citations (4)
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---|---|---|---|---|
CN1516304A (zh) * | 2003-01-03 | 2004-07-28 | 鸿富锦精密工业(深圳)有限公司 | 一种锂离子电池 |
CN1543399A (zh) * | 2001-03-26 | 2004-11-03 | 含碳纳米管的涂层 | |
CN1556548A (zh) * | 2004-01-08 | 2004-12-22 | 西安交通大学 | 一种用于场发射显示器阴极的大面积碳纳米管薄膜制备方法 |
CN1267964C (zh) * | 2003-09-10 | 2006-08-02 | 西安交通大学 | 碳纳米管场致发射发光管及其制备方法 |
Family Cites Families (28)
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US3784384A (en) * | 1964-03-17 | 1974-01-08 | Atomic Energy Commission | High temperature ceramic composition for hydrogen retention |
US4200484A (en) * | 1977-09-06 | 1980-04-29 | Rockwell International Corporation | Method of fabricating multiple layer composite |
DE3512158A1 (de) * | 1985-04-03 | 1986-10-23 | W.C. Heraeus Gmbh, 6450 Hanau | Elektrisches bauelement sowie verfahren zum herstellen eines solchen bauelementes |
DE69130184T2 (de) * | 1990-02-23 | 1999-02-11 | Fuji Photo Film Co., Ltd., Minami-Ashigara, Kanagawa | Verfahren zur Herstellung mehrschichtiger Beschichtungen |
KR100342039B1 (ko) * | 1994-12-29 | 2002-10-25 | 삼성에스디아이 주식회사 | 전기적접촉구조의형성방법 |
JP3520597B2 (ja) * | 1995-04-20 | 2004-04-19 | 双葉電子工業株式会社 | 蛍光表示管の製造方法 |
US5811924A (en) * | 1995-09-19 | 1998-09-22 | Kabushiki Kaisha Toshiba | Fluorescent lamp |
JPH10221522A (ja) * | 1997-02-07 | 1998-08-21 | Dainippon Printing Co Ltd | ブラックマトリックスの形成方法 |
JPH11238457A (ja) * | 1998-02-23 | 1999-08-31 | Ise Electronics Corp | 蛍光表示管の製造方法 |
JP2000208045A (ja) * | 1999-01-19 | 2000-07-28 | Matsushita Electric Ind Co Ltd | 円形直管内面への成膜方法 |
JP3506964B2 (ja) * | 1999-06-30 | 2004-03-15 | 太陽誘電株式会社 | 積層セラミック電子部品の製造方法 |
US7449081B2 (en) * | 2000-06-21 | 2008-11-11 | E. I. Du Pont De Nemours And Company | Process for improving the emission of electron field emitters |
JP2002042735A (ja) * | 2000-07-28 | 2002-02-08 | Mitsubishi Electric Corp | 蛍光ランプ |
DE60201176T2 (de) * | 2001-02-26 | 2005-09-22 | Nanolight International Ltd. | Verfahren zur bildung einer kohlenstoffnanoröhren enthaltenden beschichtung auf einem substrat |
US20040001953A1 (en) * | 2002-06-28 | 2004-01-01 | Luc Struye | Method for manufacturing a transparent binderless storage phosphor screen |
JP3825431B2 (ja) * | 2002-09-30 | 2006-09-27 | 双葉電子工業株式会社 | 蛍光表示管 |
JP2004143006A (ja) * | 2002-10-25 | 2004-05-20 | Sharp Corp | シリコン結晶シート製造方法および製造装置 |
WO2004052559A2 (en) * | 2002-12-06 | 2004-06-24 | Eikos, Inc. | Optically transparent nanostructured electrical conductors |
JP2005089738A (ja) * | 2003-08-12 | 2005-04-07 | Toray Ind Inc | カーボンナノチューブ分散溶液およびカーボンナノチューブ分散体 |
JP2005122930A (ja) * | 2003-10-14 | 2005-05-12 | Osaka Gas Co Ltd | ナノスケールカーボンチューブペースト及び電子放出源 |
CN100543907C (zh) * | 2004-04-22 | 2009-09-23 | 清华大学 | 一种碳纳米管场发射阴极的制备方法 |
WO2006078286A2 (en) * | 2004-05-07 | 2006-07-27 | Eikos, Inc. | Patterning carbon nanotube coatings by selective chemical modification |
US20050255613A1 (en) * | 2004-05-13 | 2005-11-17 | Dojin Kim | Manufacturing of field emission display device using carbon nanotubes |
JP2005353840A (ja) * | 2004-06-10 | 2005-12-22 | Matsushita Electric Ind Co Ltd | 配線基板構造体の製造方法およびそれにより作製される配線基板構造体 |
US20060042661A1 (en) * | 2004-08-31 | 2006-03-02 | Meyer Douglas S | Oil tank sludge removal method |
CN100583349C (zh) * | 2005-07-15 | 2010-01-20 | 清华大学 | 场发射阴极、其制造方法及平板型光源 |
CN100555529C (zh) * | 2005-11-04 | 2009-10-28 | 清华大学 | 一种场发射元件及其制备方法 |
CN101192492B (zh) * | 2006-11-22 | 2010-09-29 | 清华大学 | 透明导电膜的制备方法 |
-
2006
- 2006-11-22 CN CN2006101569886A patent/CN101192493B/zh active Active
-
2007
- 2007-10-19 US US11/875,110 patent/US20080220242A1/en not_active Abandoned
- 2007-10-23 JP JP2007275371A patent/JP4763673B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1543399A (zh) * | 2001-03-26 | 2004-11-03 | 含碳纳米管的涂层 | |
CN1516304A (zh) * | 2003-01-03 | 2004-07-28 | 鸿富锦精密工业(深圳)有限公司 | 一种锂离子电池 |
CN1267964C (zh) * | 2003-09-10 | 2006-08-02 | 西安交通大学 | 碳纳米管场致发射发光管及其制备方法 |
CN1556548A (zh) * | 2004-01-08 | 2004-12-22 | 西安交通大学 | 一种用于场发射显示器阴极的大面积碳纳米管薄膜制备方法 |
Non-Patent Citations (1)
Title |
---|
JP特开2000-327317A 2000.11.28 |
Also Published As
Publication number | Publication date |
---|---|
US20080220242A1 (en) | 2008-09-11 |
JP2008130552A (ja) | 2008-06-05 |
CN101192493A (zh) | 2008-06-04 |
JP4763673B2 (ja) | 2011-08-31 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CI01 | Publication of corrected invention patent application |
Correction item: Patentee|Address|Co-patentee Correct: Tsinghua University|100084 Tsinghua Foxconn nanometer science and technology research center, Tsinghua University, Beijing, Haidian District 310|Hongfujin Precision Industry (Shenzhen) Co., Ltd. False: Hongfujin Precision Industry (Shenzhen) Co., Ltd.|518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Number: 05 Volume: 27 |
|
CI03 | Correction of invention patent |
Correction item: Patentee|Address|Co-patentee Correct: Tsinghua University|100084 Tsinghua Foxconn nanometer science and technology research center, Tsinghua University, Beijing, Haidian District 310|Hongfujin Precision Industry (Shenzhen) Co., Ltd. False: Hongfujin Precision Industry (Shenzhen) Co., Ltd.|518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Number: 05 Page: The title page Volume: 27 |
|
ERR | Gazette correction |
Free format text: CORRECT: PATENTEE; ADDRESS; CO-PATENTEE; FROM: HONGFUJIN PRECISION INDUSTRY (SHENZHEN) CO., LTD.;518109 NO. 2, EAST RING ROAD 2, YOUSONG INDUSTRIAL AREA 10, LONGHUA TOWN, BAOAN DISTRICT, SHENZHEN CITY, GUANGDONG PROVINCE TO: TSINGHUA UNIVERSITY;100084 310#, TSINGHUA-FOXCONN NANOTECHNOLOGY RESEARCH CENTER, TSINGHUA UNIVERSITY, HAIDIAN DISTRICT, BEIJING; HONGFUJIN PRECISION INDUSTRY (SHENZHEN) CO., LTD. |