CN101159228A - Processing gas supplying mechanism, supplying method and gas processing unit - Google Patents
Processing gas supplying mechanism, supplying method and gas processing unit Download PDFInfo
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- CN101159228A CN101159228A CNA200710154446XA CN200710154446A CN101159228A CN 101159228 A CN101159228 A CN 101159228A CN A200710154446X A CNA200710154446X A CN A200710154446XA CN 200710154446 A CN200710154446 A CN 200710154446A CN 101159228 A CN101159228 A CN 101159228A
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- 230000007246 mechanism Effects 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000012545 processing Methods 0.000 title claims description 434
- 238000004891 communication Methods 0.000 claims description 32
- 230000033228 biological regulation Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 18
- 230000001105 regulatory effect Effects 0.000 claims description 12
- 238000011144 upstream manufacturing Methods 0.000 claims description 10
- 230000001052 transient effect Effects 0.000 claims description 8
- 230000001276 controlling effect Effects 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 546
- 239000000758 substrate Substances 0.000 abstract description 46
- 229910052734 helium Inorganic materials 0.000 abstract description 15
- 239000001307 helium Substances 0.000 abstract description 15
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract description 15
- 238000001020 plasma etching Methods 0.000 description 27
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 25
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 25
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 25
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 20
- 230000006641 stabilisation Effects 0.000 description 11
- 238000011105 stabilization Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 7
- 230000007723 transport mechanism Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- YCNIQYLWIPCLNY-QHCPKHFHSA-N 4s145c552u Chemical compound C1=CC=C2C=C(CN3C4=CC5=C(C3=O)COC(=O)[C@@]5(CC)OC(=O)CC)C4=NC2=C1 YCNIQYLWIPCLNY-QHCPKHFHSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
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- 239000004020 conductor Substances 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 230000028016 temperature homeostasis Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/38—Exhausting, degassing, filling, or cleaning vessels
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/50—Filling, e.g. selection of gas mixture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/54—Means for exhausting the gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention relates to a treatment gas supplying mechanism, supplying method and gas treatment device, wherein the treatment gas supplying mechanism supplies treatment gas for making the treatment container at preset pressure in short time. The treatment gas supplying mechanism (3) comprises: a He gas supply resource (30) for supplying helium gas as treatment gas to a chamber (2) as treatment container of holding substrate; a treatment gas jar (33) for temporarily storing helium gas from the He gas supply resource (30); a treatment gas circulating parts (35) for supplying helium gas from the He gas supply resource (30) to the treatment gas jar (33) and supplying the helium gas from the treatment gas jar (33) to chamber (2), wherein the helium gas is temporarily stored in the treatment gas jar (33) from the He gas supply resource (30) through the treatment gas circulating parts (35) and supplied to the chamber (2) from the treatment gas jar (33).
Description
Technical field
The gas treatment equipment that the present invention relates to handle gas supply mechanism and handle the gas supply method and possess this processing gas supply mechanism, it supplies with processing gas according to the mode of the handled objects such as glass substrate that are housed in flat-panel monitor (FPD) usefulness in the container handling being implemented predetermined process in container handling.
Background technology
In the process for making of FPD, implement predetermined process such as etch processes or film forming processing for glass substrate that the FPD as handled object is used and using the plasma processing apparatus of plasma-etching apparatus or plasma CVD film formation device etc.In plasma processing apparatus, generally speaking, glass substrate is under the state on the mounting table that is positioned in the container handling, by the plasma that produces the processing gas that high-frequency electric field generates when handling gas handles supplying with in container handling.
In container handling, supply with and handle gas, and adjusting (for example with reference to the patent documentation 1) that is carried out in the flow by flow adjusting mechanisms such as mass flow controllers normally via an end and the streams such as pipe arrangement that processing gas supply source is connected, the other end is being connected with container handling.
But, recently, FPD develops towards the direction that maximizes, even the huge glass substrate of 2m also appearred surpassing on one side, it is big that container handling also becomes thereupon, therefore, if use the processing gas supply mode of described prior art, then handle gas to the pressure in the container handling and reach setting pressure and then need long time, so the problem that throughput descends will occur from beginning to supply with.
[patent documentation 1] TOHKEMY 2002-313898 communique
Summary of the invention
The present invention is exactly In view of the foregoing and produces, and its purpose is to provide to supply with at short notice and makes the processing gas supply mechanism of the processing gas that becomes setting pressure in the container handling and the storage medium of handling the gas supply method, possessing the gas treatment equipment of such processing gas supply mechanism and storing the embodied on computer readable of the control program that is used to implement this processing gas supply method.
In order to solve above-mentioned problem, a kind of processing gas supply mechanism is provided in first viewpoint of the present invention, it is characterized in that, this processing gas supply mechanism is handled gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in above-mentioned container handling, and this processing gas supply mechanism comprises: be used for supplying with in above-mentioned container handling the processing gas supply source of handling gas; Be used for temporary transient processing gas tank of storing from the processing gas of above-mentioned processing gas supply source; With will supply with above-mentioned processing gas tank from the processing gas of above-mentioned processing gas supply source, and the processing gas in the above-mentioned processing gas tank supplied with processing gas communication parts in the above-mentioned container handling, and, handle gas and temporarily be stored in the above-mentioned processing gas tank, and in above-mentioned container handling, supply with from above-mentioned processing gas tank from above-mentioned processing gas supply source.
In addition, in second viewpoint of the present invention, provide a kind of gas treatment equipment, it is characterized in that, comprising: the container handling of accommodating handled object; In above-mentioned container handling, supply with the processing gas supply mechanism of handling gas; And to carrying out the exhaust unit of exhaust in the above-mentioned container handling, and, under the state that handled object is housed in the above-mentioned container handling, utilize above-mentioned exhaust unit to carry out exhaust, utilize above-mentioned processing gas supply mechanism to supply with simultaneously and handle gas, handled object is implemented predetermined processing, and above-mentioned processing gas supply mechanism comprises: be used for supplying with in above-mentioned container handling the processing gas supply source of handling gas; Be used for temporary transient processing gas tank of storing from the processing gas of above-mentioned processing gas supply source; With will supply with above-mentioned processing gas tank from the processing gas of above-mentioned processing gas supply source, and the processing gas in the above-mentioned processing gas tank supplied with processing gas communication parts in the above-mentioned container handling, and, handle gas and temporarily be stored in the above-mentioned processing gas tank, and in above-mentioned container handling, supply with from above-mentioned processing gas tank from above-mentioned processing gas supply source.
In second viewpoint of the present invention, a kind of preferred implementation is arranged, above-mentioned processing gas communication parts comprise: the first processing gas flow path that is being connected with above-mentioned processing gas supply source and above-mentioned container handling; And from the above-mentioned first second processing gas flow path of handling gas flow path branch and being connected with above-mentioned processing gas tank, above-mentioned processing gas supply mechanism is also supplied with in above-mentioned container handling from above-mentioned processing gas supply source and is handled gas.
In this case, another kind of preferred implementation is arranged, be provided with a plurality of above-mentioned processing gas tank, and, corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, above-mentioned each second handle gas flow path and have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for sending stream from what above-mentioned processing gas tank was sent with handling gas.In this case, also preferred, comprise the control part of controlling above-mentioned processing gas supply mechanism, above-mentioned control part carries out following control: make and handle gas and supply with in above-mentioned container handling by the above-mentioned stream of sending from the part of above-mentioned a plurality of processing gas tank, make simultaneously and handle gas and be stored in the remaining part or all of above-mentioned a plurality of processing gas tank from above-mentioned processing gas supply source by the above-mentioned stream of sending into.
In other words, in this case, also have another kind of preferred implementation, above-mentioned second handles gas flow path has the stream of sending into that is used for processing gas is sent into above-mentioned processing gas tank respectively; And be used for sending stream from what above-mentioned processing gas tank was sent with handling gas, and be provided with a plurality of above-mentioned processing gas supply sources to supply with different multiple processing gas, and, above-mentioned first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream, and the above-mentioned second above-mentioned stream of sending into of handling gas flow path is to connect stream branch from above-mentioned first above-mentioned each supply source of handling gas flow path.Moreover, in this case, also can be preferred, comprise the control part of controlling above-mentioned processing gas supply mechanism, above-mentioned control part carries out following control: the processing gas be made up of regulation kind and ratio is sent after stream supplies with in above-mentioned container handling by above-mentioned from above-mentioned processing gas tank, making the processing gas be made up of afore mentioned rules kind and ratio handle gas flow path from part or all of above-mentioned a plurality of processing gas supply sources by above-mentioned first supplies with in above-mentioned container handling, meanwhile, make the processing gas of forming by the kind different and/or ratio, be stored in the above-mentioned processing gas tank by the above-mentioned stream of sending into from part or all of above-mentioned a plurality of processing gas supply sources with afore mentioned rules kind and ratio.
In addition, in this case, a kind of preferred implementation is arranged, be provided with a plurality of above-mentioned processing gas tank, and, corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, above-mentioned each second handle gas flow path and have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for sending stream from what above-mentioned processing gas tank was sent with handling gas, be provided with a plurality of above-mentioned processing gas supply sources to supply with different multiple processing gas, and, above-mentioned first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream, and above-mentioned each second above-mentioned stream of sending into of handling gas flow path is to connect stream branch from above-mentioned first above-mentioned each supply source of handling gas flow path.Moreover, in this case, also preferred, comprise the control part of controlling above-mentioned processing gas supply mechanism, above-mentioned control part carries out following control: the processing gas of being made up of regulation kind and ratio is supplied with in above-mentioned container handling by the above-mentioned stream of sending from the part of above-mentioned a plurality of processing gas tank, and making the processing gas be made up of afore mentioned rules kind and ratio handle gas flow path from part or all of above-mentioned a plurality of processing gas supply sources by above-mentioned first supplies with in above-mentioned container handling, meanwhile, make the processing gas of forming by the kind different and/or ratio, send into stream to be stored in above-mentioned a plurality of processing gas tank remaining part or all by above-mentioned from part or all of above-mentioned a plurality of processing gas supply sources with afore mentioned rules kind and ratio.
Moreover, in these cases, also can be above-mentioned first to handle gas flow path and have respectively: when making processing gas from above-mentioned processing gas supply source be stored in the above-mentioned processing gas tank and make the storage stream of its circulation; And when will supplying with in the above-mentioned container handling and make the supply stream of its circulation from the processing gas of above-mentioned processing gas supply source.
In addition, in above second viewpoint of the present invention, also have a kind of preferred implementation, above-mentioned exhaust unit has the exhaust flow path that a plurality of and above-mentioned container handling is being connected; And by above-mentioned exhaust flow path to carrying out the exhaust apparatus of exhaust in the above-mentioned container handling, in this case, on the part in above-mentioned processing gas communication parts and the above-mentioned a plurality of exhaust flow paths, be connected bypass flow path, the processing gas that constitutes in the above-mentioned processing gas communication parts can be discharged by above-mentioned exhaust unit by above-mentioned bypass flow path, and the above-mentioned exhaust flow path that is connecting above-mentioned bypass flow path is also leaning on the upstream side of upstream to open and close freely than its connecting portion with above-mentioned bypass flow path.
In addition, in above second viewpoint of the present invention, also preferred, in above-mentioned container handling, also possess plasma and generate mechanism, it generates the plasma of the processing gas of being supplied with by above-mentioned processing gas supply mechanism, and the processing of afore mentioned rules is being to use the plasma treatment of the plasma of handling gas.
In addition, a kind of processing gas supply method is provided in the 3rd viewpoint of the present invention, it is characterized in that, it handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in above-mentioned container handling, prepare: be used for supplying with the processing gas supply source of handling gas in above-mentioned container handling; Be used for temporary transient processing gas tank of storing from the processing gas of above-mentioned processing gas supply source; With will supply with above-mentioned processing gas tank from the processing gas of above-mentioned processing gas supply source, and the processing gas in the above-mentioned processing gas tank supplied with processing gas communication parts in the above-mentioned container handling, to handle gas and temporarily be stored in the above-mentioned processing gas tank, and in above-mentioned container handling, supply with from above-mentioned processing gas tank from above-mentioned processing gas supply source.
In the 3rd viewpoint of the present invention, a kind of preferred implementation is arranged, in advance by the first processing gas flow path that is being connected with above-mentioned processing gas supply source and above-mentioned container handling; And from above-mentioned first handle gas flow path branch and be connected with above-mentioned processing gas tank second handle gas flow path and constitute above-mentioned processing gas communication parts, also in above-mentioned container handling, supplies with processing gas from above-mentioned processing gas supply source.
In this case, also has another kind of preferred implementation, a plurality of above-mentioned processing gas tank are set, and corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for sending stream from what above-mentioned processing gas tank was sent with handling gas, constitute above-mentioned each second processing gas flow path, in above-mentioned container handling, supply with processing gas from the part of above-mentioned a plurality of processing gas tank by the above-mentioned stream of sending, simultaneously, from above-mentioned processing gas supply source by the above-mentioned stream of sending at above-mentioned a plurality of processing gas tank the remaining storage at body of regulating the flow of vital energy part or all.
Perhaps, in this case, also have another kind of preferred implementation, have the stream of sending into that is used for processing gas is sent into above-mentioned processing gas tank respectively; And be used for sending stream from what above-mentioned processing gas tank was sent with handling gas, constitute above-mentioned second and handle gas flow path, a plurality of above-mentioned processing gas supply sources are set to supply with different multiple processing gas, and, handling gas flow path with above-mentioned first constitutes to have and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream, the above-mentioned second above-mentioned stream of sending into of handling gas flow path is connected stream branch from above-mentioned first above-mentioned each supply source of handling gas flow path, from above-mentioned processing gas tank by above-mentioned send stream and in above-mentioned container handling, supply with the processing gas of forming by regulation kind and ratio after, handle gas flow path from part or all of above-mentioned a plurality of processing gas supply sources by above-mentioned first and in above-mentioned container handling, supply with the processing gas of forming by afore mentioned rules kind and ratio, meanwhile, above-mentioned processing gas tank, store the processing gas of forming by the kind different and/or ratio from part or all of above-mentioned a plurality of processing gas supply sources by the above-mentioned stream of sending into afore mentioned rules kind and ratio.
In addition, in this case, also has another kind of preferred implementation, a plurality of above-mentioned processing gas tank are set, and corresponding with the quantity of above-mentioned processing gas tank and be provided with a plurality of above-mentioned second and handle gas flow paths, have respectively and be used for sending handling gas into the stream of sending into of above-mentioned processing gas tank; And be used for sending stream from what above-mentioned processing gas tank was sent with handling gas, constitute above-mentioned each second processing gas flow path, a plurality of above-mentioned processing gas supply sources are set to supply with different multiple processing gas, and, handling gas flow path with above-mentioned first constitutes to have and is branched off into supply source a plurality of and that be connected with the above-mentioned body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of above-mentioned processing gas supply source and connects stream, the above-mentioned second above-mentioned stream of sending into of handling gas flow path is connected stream branch from above-mentioned first above-mentioned each supply source of handling gas flow path, in above-mentioned container handling, supply with the processing gas of forming by regulation kind and ratio from the part of above-mentioned a plurality of processing gas tank by the above-mentioned stream of sending, and handle gas flow path from part or all of above-mentioned a plurality of processing gas supply sources by above-mentioned first and in above-mentioned container handling, supply with the processing gas of forming by afore mentioned rules kind and ratio, meanwhile, part or all store the processing gas by with afore mentioned rules kind and ratio different kind and/or ratio formed by the above-mentioned stream of sending into above-mentioned a plurality of processing gas tank remaining from part or all of above-mentioned a plurality of processing gas supply sources.
Moreover, in the 4th viewpoint of the present invention, a kind of storage medium of embodied on computer readable is provided, it is characterized in that, it is storing the control program of operation on computers, and above-mentioned control program makes the computer control processing unit according to the mode of implementing above-mentioned processing gas supply method when carrying out.
According to the present invention, because processing gas temporarily is stored in the processing gas tank from handling the gas supply source via handling the gas communication parts, and, therefore can supply with the processing gas that makes the amount that becomes setting pressure in the container handling at short notice from handling in the gas tank supply container handling.Therefore, can shorten the processing time of handled object.
Description of drawings
Fig. 1 is the rough cross-sectional view of plasma-etching apparatus of an execution mode of gas treatment equipment involved in the present invention.
Fig. 2 be measure to handle the filling time of gas and handle gas when supplying with stabilization time employed plasma-etching apparatus rough cross-sectional view.
Fig. 3 is the figure that the measurement result of the stabilization time when supplying with is handled the filling time of gas and handled gas in expression.
Fig. 4 is the rough cross-sectional view of plasma-etching apparatus of other execution mode of gas treatment equipment involved in the present invention.
Fig. 5 is the distortion example that the supply source of processing gas supply mechanism set in plasma-etching apparatus connects stream.
Symbol description
1,1`: plasma-etching apparatus (gas treatment equipment)
2: chamber (container handling)
3,3`: handle gas supply mechanism
4: exhaust unit
5: plasma generates mechanism
41: blast pipe (exhaust flow path)
42: exhaust apparatus
30:He gas supply source (handling the gas supply source)
31:HCl gas supply source (handling the gas supply source)
32:SF
6Gas supply source (handling the gas supply source)
33,34: handle gas tank (tank)
35: handle the gas communication parts
36: the first processing gas flow paths
36a, 36b, 36c: supply source connects stream
36j, 36k, 36l: store and use stream
36m, 36n, 36o: supply with and use stream
37,37`, 38,38`: second handles gas flow path
37a, 37a`, 38a, 38a`: send into stream
37b, 38b: send stream
39,39`: bypass flow path
90: process controller
91: user interface
92: storage part
93: cell controller (control part)
G: glass substrate (handled object)
Embodiment
Below, with reference to accompanying drawing, embodiments of the present invention are described.
Fig. 1 is the rough cross-sectional view as the plasma-etching apparatus of an execution mode of processing unit involved in the present invention.
This plasma Etaching device 1 constitutes the capacitive coupling type parallel flat plasma-etching apparatus that glass substrate (hereinafter to be referred as " the substrate ") G that the FPD as handled object is used carries out etch processes.Can list as FPD: LCD (LCD), electroluminescence (Electro Luminescence; EL) display, plasma display (PDP) etc.Plasma-etching apparatus 1 comprises: supply with to handle the processing gas supply mechanism 3 of gas as the chamber 2 of the container handling of accommodating substrate G, in chamber 2, to the exhaust unit 4 that carries out exhaust in the chamber 2 and generate the plasma generation mechanism 5 that processed gas supply mechanism 3 supplies to the plasma of the processing gas chamber 2 in.
On the sidewall of chamber 2, be formed with to be used to move into and take out of moving into of substrate G and take out of mouthfuls 21, and be provided with and open and close this and move into and take out of mouthfuls 21 gate valve 22.Take out of mouthfuls 21 when open when moving into, utilize transport mechanism not shown in the figures inside and outside chamber 2, to move into and take out of substrate G.
On the diapire and pedestal 20 of chamber 2, for example be formed with their logical jack 23 of a plurality of perforations on the periphery position of pedestal 20 devices spaced apart ground.In each logical jack 23, according to being inserted with from below supporting substrates G and making the lifter pin 24 of its lifting with respect to the outstanding mode of submerging of the substrate-placing face of pedestal 20.Be formed with flange portion 25 in the bottom of each lifter pin 24, be connected with an end (bottom) of the corrugated tube that can stretch 26 that is being provided with according to the mode that centers on lifter pin 24 on each flange portion 25, another end (upper end) of this corrugated tube 26 is connected with the diapire of chamber 2.Like this, corrugated tube 26 stretches along with the lifting of lifter pin 24, and the gap of logical jack 23 with lifter pin 24 sealed.
At the top or the upper wall of chamber 2, according to being provided with the processing gas that in chamber 2, spues and supplied with by processing gas supply mechanism 3 described later, and has shower nozzle 27 as the function of upper electrode with pedestal 20 mode in opposite directions.Shower nozzle 27 is grounded, be formed with to make to handle gas in the gaseous diffusion space 28 of diffusion inside, and lower surface or with the opposite face of pedestal 20 on be formed with a plurality of holes 29 that spue of the processing gas after gaseous diffusion space 28 is by diffusion that is used for spuing.
Exhaust unit 4 comprises: as the blast pipe 41 of the exhaust flow path that is being connected with for example diapire of chamber 2; Be connected and exhaust apparatus 42 with this blast pipe 41 by carrying out exhaust in 41 pairs of chambers 2 of blast pipe; And the connecting portion than itself and exhaust apparatus 42 that is set at blast pipe 41 also relies on the upstream side of upstream, is used to adjust the pressure-regulating valve 43 of the pressure in the chamber 2.Exhaust apparatus 42 constitutes has turbomolecular pump equal vacuum pump, thus, can will be evacuated to the reduced atmosphere of regulation in the chamber 2.On the circumferencial direction of chamber 2, be provided with to devices spaced apart a plurality of blast pipes 41, be provided with a plurality of exhaust apparatus 42 and pressure-regulating valve 43 accordingly with each blast pipe 41.
Plasma generates mechanism 5 and comprises and being connected with the substrate 20a of pedestal 20, is used for the supply lines 51 of supply high frequency electric power; And the adaptation 52 and the high frequency electric source 53 that are being connected with this supply lines 51.Supply with for example High frequency power of 13.56MHz from high frequency electric source 53 to pedestal 20, like this, pedestal 20 just has the function as lower electrode, and constitutes the pair of parallel plate electrodes jointly with shower nozzle 27.Pedestal 20 and shower nozzle 27 constitute the part that plasma generates mechanism 5.
Handling gas supply mechanism 3 comprises: be used for supplying with in chamber 2 and handle gas, for example He gas, HCl gas and SF
6The processing gas supply source of gas, for example He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32; Be used for temporary transient storage or filling from He gas supply source 30, HCl gas supply source 31 and SF
6A plurality of for example 2 processing gas tank 33,34 of the processing gas of gas supply source 32; And handle gas communication parts 35, these processing gas communication parts comprise from He gas supply source 30, HCl gas supply source 31 and SF
6The processing gas of gas supply source 32 is supplied with in handling gas tank 33,34 and chamber 2, and will be stored in the processing gas of handling in the gas tank 33,34 and supply with the interior pipe arrangement of chamber 2 etc.Handling gas communication parts 35 comprises: connecting He gas supply source 30, HCl gas supply source 31 and SF
6First of gas supply source 32 and chamber 2 handled gas flow path 36; With according to 2 handle gas tank 33,34 corresponding modes respectively from first handle gas flow path 36 branches and with handle that gas tank 33,34 is being connected second handle gas flow path 37,38.
First handle gas flow path 36 a side in other words upstream portion have according to 3 handle gas supply source (He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32) corresponding mode and be branched off into 3 and handle the supply source that gas supply source is being connected with each and connect stream 36a, 36b, 36c, the other end or end of downstream side are according to being connected with the top of shower nozzle 27 with mode that gaseous diffusion space 28 is communicated with.Handle in the gas flow path 36 first, connect at supply source and to be respectively arranged with mass flow controller 36d, 36e, 36f and valve 36g, 36h, the 36i that is used to adjust the flow of handling gas among stream 36a, 36b, the 36c, on a for example end that also relies on opposite side than its branching portion and another end, also be respectively arranged with valve 36s, 36t with the second processing gas flow path 37,38.
Second handles gas flow path 37,38 respectively from handling the supply source connection stream 36a of gas flow path 36, the downstream branch that 36b, 36c also rely on the downstream than first, and, connecting processing gas tank 33,34 at pars intermedia according to being connected with the top of shower nozzle 27 with mode that gaseous diffusion space 28 is communicated with.Like this, second handle gas flow path 37,38 and have respectively: be used for handle gas send into handle gas tank 33,34 send into stream 37a, 38a; And be used for from handle gas tank 33,34 send handle gas send stream 37b, 38b.Be respectively arranged with valve 37c, 38c and valve 37d, 38d among stream 37b, the 38b sending into stream 37a, 38a and send, be respectively arranged with pressure gauge 33a, the 34a that is used to measure internal pressure handling on the gas tank 33,34.
For example be connected bypass flow path 39 such as pipe arrangement in 1 handling the part that gas communication parts 35, for example first handle in gas flow path 36 and a plurality of blast pipes 41, the processing gases of handling in the gas communication parts 35 just can be deflated unit 4 discharges by bypass flow path 39.Bypass flow path 39 constitutes, and is connected between the pressure-regulating valve 43 and exhaust apparatus 42 of blast pipe 41, by closing this pressure-regulating valve 43, then can prevent to flow in the chamber 2 by blast pipe 41 from the processing gas that bypass flow path 39 is discharged from.
Each component part of plasma-etching apparatus 1 is had the process controller 90 of microprocessor (computer) and is controlled.On this process controller 90, connecting user interface 91, this user interface is that managing plasma Etaching device 1 carries out the keyboard of order input operation etc. and shows that visually the display etc. of the working order of plasma-etching apparatus 1 constitutes by process engineering person; And storage part 92, this storage portion stores being used under the control of process controller 90 and is implemented in the scheme that the control program of the processing that plasma-etching apparatus 1 implements and treatment conditions data etc. write down.As required, according to from storage part 92, transferring arbitrarily scheme from indication of user interface 91 etc. and it being moved, like this, just can under the control of process controller 90, be implemented in the processing in the plasma-etching apparatus 1 in process controller 90.Described scheme can be stored in the storage medium that for example computers such as CD-ROM, hard disk, flash memory can read, and perhaps the device from other for example transmits at any time by special line, to be used.
More specifically, each valve 36g, 36h, 36i, 36s, 36t, 37c, 37d, 38c, 38d, the 39a that handles gas supply mechanism 3 constitutes the cell controller 93 (control part) that is being connected with process controller 90 and controls.As required, according to from indication of user interface 91 etc., process controller 90 is transferred arbitrarily scheme and it is controlled by cell controller 93 from storage part 92.
In the plasma-etching apparatus 1 that adopts aforesaid way to constitute, the specified vacuum degree will be remained by exhaust unit 4 in the chamber 2, keeping under the situation of this state, at first, move under mouthful 21 states that are being opened of taking out of making by gate valve 22, take out of mouthfuls 21 by transport mechanism not shown in the figures from moving into of being opened and move into substrate G, each lifter pin 24 is risen, utilize each lifter pin 24 to receive substrate G and supporting substrates from transport mechanism.Transport mechanism from move into take out of mouthfuls 21 withdraw to chamber 2 after, utilize gate valve 22 to close to move into and take out of mouthfuls 21, and make each lifter pin 24 decline and make the substrate-placing face of its pedestal 20 that submerges, substrate G is positioned on the pedestal 20.
Then, in chamber 2, supply with processing gas by handling gas supply mechanism 3.The supply of processing gas herein is by opening valve 37d, emitting from He gas supply source 30, HCl gas supply source 31 and SF
6 Gas supply source 32 is pre-filled in He gas, HCl gas and the SF that handles in the gas tank 33
6Gas carries out.
Owing to be deflated unit 4 exhausts in the chamber 2, therefore, be filled in the processing gas of handling in the gas tank 33 if only supply with, then after after a while, the pressure in the chamber 2 will reduce.Therefore, when supply is filled in the processing gas of handling in the gas tank 33 or after the back to back supply, open valve 36s, 36t, 36g, 36h, 36i, adjust from He gas supply source 30, HCl gas supply source 31 and SF by mass flow controller 36d, 36e, 36f
6The He gas of gas supply source 32, HCl gas and SF
6The flow of gas, and supply in the chamber 2, simultaneously, utilize pressure-control valve 43 to remain on setting pressure, for example 23.3Pa (0.175Torr) in the chamber 2.Like this, just can promptly remain on the setting pressure in the chamber 2.In addition, handling gas communication parts 35 comprises and is connecting He gas supply source 30, HCl gas supply source 31 and SF
6First of gas supply source 32 and chamber 2 handled gas flow path 36; And from the first second processing gas flow path 37,38 of handling gas flow path 36 branches and being connected with processing gas tank 33,34 respectively, so, do not make from He gas supply source 30, HCl gas supply source 31 and SF
6The helium of gas supply source 32, hydrogen chloride gas and SF
6Gas is handled gas flow path 36 via first and by as the processing gas tank 33,34 than large space, can be supplied at short notice in the chamber 2, like this, just can realize further rapidization that the pressure in the chamber 2 keeps.
Under this state, thereby the Electrostatic Absorption mechanism in being built in pedestal 20 applies direct voltage substrate G is adsorbed on the pedestal 20, simultaneously, utilize to be built in the temperature that the thermoregulative mechanism in the pedestal 20 is regulated substrate G.Apply High frequency power via adaptation 52 to pedestal 20 from high frequency electric source 53, between as the pedestal 20 of lower electrode and shower nozzle 27, generate high-frequency electric field, and make the processing gaseous plasmaization in the chamber 2 as upper electrode.Utilize the plasma of this processing gas that substrate G is implemented etch processes.
After substrate G enforcement etch processes, stop to apply High frequency power from high frequency electric source 53.Then, shut off valve 36g, 36h, 36i and stop to supply with from He gas supply source 30, HCl gas supply source 31 and SF
6The helium of gas supply source 32, hydrogen chloride gas and SF
6Gas simultaneously, utilizes exhaust unit 4 to discharge in the chamber 2 and the first processing gas of handling in gas flow path 36 or the processing gas communication parts 35.Remove of the absorption of Electrostatic Absorption mechanism to substrate G, afterwards, in chamber 2, supplying with processing gas, and will remain in the chamber 2 under the state of setting pressure, for example 26.7Pa (0.2Torr), apply High frequency power and make the processing gaseous plasmaization to pedestal 20, substrate G is implemented to remove electric treatment.The supply of processing gas is herein carried out in the following manner, open valve 38d, emit from He gas supply source 30 and be pre-filled in the helium of handling the gas tank 34, and, open valve 36s, 36t, 36g, according to remaining on the mode of setting pressure in the chamber 2, utilize mass flow controller 36d to adjust and send from the flow of the helium of He gas supply source 30 and with it.Like this, can not only make the pressure moment in the chamber 2 remain on setting pressure or, can also promptly carry out the electric treatment that removes of substrate G near setting pressure.
In case carried out the electric treatment that removes of substrate G, and then discharged in the chambers 2 and first handle gas flow path 36 or handle processing gases in the gas communication parts 35 by exhaust unit 4.Then, use gate valve 22 open moving into to take out of mouth 21, and lifter pin 24 is risen, substrate G is left upward from pedestal 20.Afterwards, the transport mechanism that does not show in the drawings from move into take out of mouthfuls 21 enter in the chamber 2 after, lifter pin 24 is descended, G transfers on the transport mechanism with substrate.Afterwards, substrate G is taken out of mouthfuls 21 and takes out of to chamber 2 from moving into by transport mechanism.
Filling processing gas once more to processing gas tank 33,34 is to carry out when moving into of substrate G taken out of.At first, open valve 37c, in handling gas tank 33, fill and handle gas.At this moment, flow into and handle in gas tank 34 and the chamber 2 in order to prevent to handle gas, in advance shut off valve 37d, 38c, 36s.Fill and handle after gases finish to handling gas tank 33, shut off valve 37c to remain in first and handles gas flow path 36 and send into the processing gas among stream 37a, the 38a and open valve 39a in order to discharge.At this moment, do not flow in the chamber 2, close the pressure-regulating valve 43 of the blast pipe 41 that is connecting bypass flow path 39 in advance in order to make processing gas.After discharge processing gas is finished,, handle gases to 34 fillings of processing gas tank with same to handling gas tank 33 fillings, behind the end-of-fill, the discharge that remains in the first processing gas flow path 36 equally and send into the processing gas among stream 37a, the 38a.Moreover, also can carry out filling earlier to the processing gas of handling gas tank 34.
In the present embodiment, because by handling gas communication parts 35, the temporary transient filling in handling gas tank 33,34 from handling gas supply source, for example He gas supply source 30, HCl gas supply source 31 and SF
6Processing gas, for example helium, hydrogen chloride gas and the SF of gas supply source 32
6Gas, the processing that the processing gas of handling in the gas tank 33,34 is supplied with in the chamber 2 and comprised the plasma etching of substrate G will be filled in, therefore, even the capacity of chamber 2 is bigger, also can supply with at short notice and make the processing gas that becomes setting pressure in this chamber 2, so just can realize reduction in processing time.
In addition, in the present embodiment, the processing gas of being supplied with when filling plasma etch process and use and handle gas tank 33 is filled the processing gas of being supplied with after the plasma etch process and is used and handle gas tank 34, and they also can replace use.In addition, in the present embodiment, make second to handle gas flow path 37,38 and handle gas flow path 36 branches and be provided with from first respectively, still, also handle gas flow path 36 branches and be provided with from first under the state that can converge in an end that makes them.Perhaps, also can make second to handle gas flow path 37,38 and be not connected with the top of shower nozzle 27, but with the other parts of chamber 2 for example sidewall is connected, so will not handle in the gas supply chamber 2 by shower nozzle 27.Moreover, in the present embodiment, second send stream 37b, the 38b that handles gas flow path 37,38 is connected respectively with chamber 2, still, they also can be connected with the first processing gas flow path 36.In the present embodiment, used two to handle gas tank 33,34 for two kinds of processing using different processing gas continuously, but, handling only is under a kind of situation, can only use one to handle gas tank, under the situation of carrying out the processing etc. more than three kinds continuously, also can use the processing gas tank more than three.
Below, use plasma-etching apparatus 1, measured respectively with the pressure of regulation and in handling gas tank 33, filled the time (following note is done the filling time) of handling gas and will be filled in the processing gas handled in the gas tank 33 and supply with in the chamber 2, the time (following note do stabilization time) of pressure stability about setting pressure to the chamber 2 from the processing gas of handling gas supply source 30,31,32.As shown in Figure 2, plasma-etching apparatus 1 has herein used the second processing gas flow path 37,38 that will handle gas supply mechanism 3 to be deformed into simplified structure example afterwards.The second processing gas flow path 37,38 herein is respectively that an end is connected from the first processing gas flow path, 36 branches, another end and processing gas tank 33,34, and is provided with valve 37z, 38z at pars intermedia.Therefore, second handling gas flow path 37,38 and have the regulate the flow of vital energy processing gas of body supply source 30,31,32 of being used for getting along alone in the future respectively concurrently and import the stream of handling gas tank 33,34 herein; And the stream in the processing gas importing chamber 2 that is used for to handle in the gas tank 33,34.
Set as the helium, hydrogen chloride gas and the SF that handle gas
6The flow-rate ratio of gas is 2: 1: 1, and total flow is 5slm, the capacity l of chamber 2
0Be 23101, handle the capacity l of gas tank 33
1Be 3l, the setting pressure P in the chamber 2
0For 23.3Pa (0.175Torr), respectively following situation is measured, be filled in the pressure P of handling the processing gas in the gas tank 33
1Situation (embodiment 1) for 26.7kPa (200Torr); 53.3kPa situation (400Torr) (embodiment 2); And the situation of 80.0kPa (600Torr) (embodiment 3).In addition, as a comparative example, measured not use and handled gas tank 33 and the regulate the flow of vital energy processing gas of body supply source 30,31,32 of only getting along alone in the future supplies to stabilization time under the situation in the chamber 2.Measurement result is as shown in table 1.
Table 1
| Filling time (sec) | Stabilization time (sec) | |
| |
?2 | ?14 |
| |
?5 | ?10 |
| |
?10 | ?7 |
| Comparative example | ?15 |
As shown in table 1, can confirm, in embodiment 1,2,3, compare with comparative example and shorten stabilization time.Promptly, can confirm, by using plasma-etching apparatus 1, compare with not using the situation of the plasma-etching apparatus of the prior art of handling gas tank 33, then can shorten stabilization time.
In addition, can confirm, though it is short more to be filled in the low more filling time of pressure of handling the processing gas in the gas tank 33, Gao Ze is short more stabilization time more but be filled in the pressure of handling the processing gas in the gas tank 33, and pressure is that situation and the pressure of 80.0kPa is that the situation of 26.7kPa is compared and approximately become half.This also is because if it is low to be filled in the pressure of handling the processing gas in the gas tank 33, then is supplied to processing gases in the chamber 2 and can handles gas flow path 37 by second and flow into the processing gas tank 33 from handling gas supply source 30,31,32.Therefore, in chamber 2, begin to supply with pressure in the processing gas communication parts of handling before and after the gas 35 and change and draw following result by measuring: the pressure in the processing gas communication parts 35 from processing gas tank 33 has just begun to supply with processing gas in chamber 2 after just from handling gas tank 33, shown in the arrow part of Fig. 3 (a), be filled in the pressure P of handling the processing gas in the gas tank 33
1Under the situation for 26.7kPa, the pressure 29.9kPa (224Torr) in the processing gas communication parts 35 during approaching stablizing shown in the arrow part of Fig. 3 (b), is filled in the pressure P of handling the processing gas in the gas tank 33
1Not enough 29.9kPa for example be under the situation of 17.9kPa (135Torr), and the interior pressure of processing gas communication parts when stable 35 is little, shown in the arrow parts of Fig. 3 (c), is filled in the pressure P of the processing gas in the processing gas tank 33
1Than 29.9kPa is under the situation of 53.3kPa also greatly, for example, and the pressure in the processing gas communication parts 35 when stable is also big.In addition, be filled in the pressure P of handling the processing gas in the gas tank 33
1Under the situation for 17.9kPa, compare with the situation of 26.7kPa, prolong 2 seconds more than stabilization time, promptly, its result is, than do not use handle gas tank 33 and stabilization time when only to chamber 2 in, supplying with processing gas from processing gas supply source 30,31,32 also long.Therefore, handling gas flow path 37 (38) double as second sends into the stream of handling gas tank 33 (34) and is used for and will handles gas under the situation of the stream handling gas tank 33 (34) and send handling gas for being used for, if make the pressure height that is filled in the pressure ratio processing gas communication parts 35 of handling the processing gas in the gas tank 33, so, not only can prevent to handle gas flows in the processing gas tank 33,34, and, improve the pressure that is filled in the processing gas in the processing gas tank 33, then can shorten stabilization time more.
Below, other execution mode of article on plasma body Etaching device describes.
Fig. 4 is the rough cross-sectional view as the plasma-etching apparatus of other execution mode of gas treatment equipment involved in the present invention.
As shown in Figure 4, plasma-etching apparatus 1` is the example after stream 37a, 38a and bypass flow path 39 distortion sent into of second of the processing gas supply mechanism 3 in the plasma-etching apparatus 1 being handled gas flow path 37,38, for the identical symbol of the position mark identical with plasma-etching apparatus 1 and omit its explanation.The stream 37a` (38a`) that sends into to handling gas tank 33 (34) that second of processing gas supply mechanism 3` among the plasma-etching apparatus 1` handles gas flow path 37` (38`) comprising: branch sends into stream 37e, 37f, 37g (38e, 38f, 38g), it is that an end or upstream-side-end are from importing the stream 37i of branch that these branches send into stream, 37j, 37k and continue branch, and these import branch's streams according to connecting stream 36a from supply source respectively, 36b, the specific mass flow controller 36d of 36c, 36e, 36f also rely on the upstream upstream side branch mode and be provided with; And branch sends into another end of stream 37e, 37f, 37g (38e, 38f, 38g) or end of downstream side is collaborated mutually and with handle the interflow that gas tank 33 (34) is being connected and send into stream 37h (38h).In importing the stream 37i of branch, 37j, 37k, be respectively arranged with mass flow controller 37l, 37m, 37n, send in branch and be respectively arranged with valve 37o, 37p, 37q, 38o, 38p, 38q among stream 37e, 37f, 37g, 38e, 38f, the 38g.
A side of handling the bypass flow path 39` among the gas supply mechanism 3` is upstream side branch and send into stream 37h, 38h with the interflow respectively and be connected in other words, and each branching portion is provided with valve 39b, 39c.
In the processing gas supply mechanism 3` that adopts this mode to constitute, from He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32 is handled gas communication parts 35 via first and supply with helium, hydrogen chloride gas and SF in chamber 2
6Gas, meanwhile, can be from He gas supply source 30, HCl gas supply source 31 and SF
6Gas supply source 32 is handled gas flow path 37` (38`) via second and is filled helium, hydrogen chloride gas and SF to handling gas tank 33 (34)
6Gas, and, can adjust flow, the flow of hydrogen chloride gas, the SF that is supplied to the helium in the chamber 2 respectively by each mass flow controller 36d, 36e, 36f, 37l, 37m, 37n and each valve 36g, 36h, 36i, 37o (38o), 37p (38p), 37q (38q)
6The flow of gas, be fed to flow, the flow of hydrogen chloride gas, the SF of the helium of handling gas tank 33 (34)
6The flow of gas.In addition, make bypass flow path 39` branch and send into stream 37h, 38h with the interflow respectively and be connected, like this, then can discharge respectively and comprise that the interflow sends into the processing gas that second of stream 37h handles in the gas flow path 37` and send into the second processing gas of handling in the gas flow path 38` of stream 38h with comprising the interflow.Therefore, to be filled in the processing gas of handling in the gas tank 33 (34) of forming by regulation kind and ratio in advance, and from handling gas supply source 30,31, in 32 the processing gas supply chamber of forming by regulation kind and ratio 2, carry out certain processing, because meanwhile, can be with employed in handling at next, the processing gas of being made up of the kind different with regulation kind and ratio and/or ratio is filled in to be handled in the gas tank 34 (33), so can carry out the different processing more than three kinds such as employed processing gaseous species or ratio continuously.
Moreover, in the present embodiment, make branch send into stream 37e, 38e, 37f, 38f, 37g, 38g via importing the stream 37i of branch, 37j, 37k from supply source connection stream 36a, 36b, 36c branch, but, can be not do not connect stream 36a, 36b, 36c direct descendant from supply source by importing the stream 37i of branch, 37j, 37k yet.In this case, can send in branch mass flow controller is set respectively among stream 37e, 38e, 37f, 38f, 37g, the 38g.
The supply source that Fig. 5 is illustrated in processing gas supply mechanism 3 set in the plasma-etching apparatus 1 connects the variation of stream.
In order to fill processing gas from handling gas supply source 30,31,32 to handling gas tank 33,34 at short notice, the parts that preferred employing can be suitable for big flow are formed in supply source and connect set mass flow controller and valve among stream 36a, 36b, the 36c, thereby supply with processing gas according to big flow to handling gas tank 33,34.But, in order to improve the processing quality of substrate G, must adjust meticulously from handling the flow that gas supply source 30,31,32 is supplied to the processing gas in the chamber 2, if in supply source connection stream 36a, 36b, 36c, the mass flow controller that can be suitable for big flow is set, so just can't carry out delicate adjustment, the processing quality of substrate G is descended flow.Therefore, as shown in Figure 5, connect among stream 36a, 36b, the 36c at each supply source, make its branch into make from the processing gas of handling gas supply source 30,31,32 store or be filled in when handling in the gas tank 33,34 and the storage that makes its circulation with stream 36j, 36k, 36l; And when supplying with in the chamber 2, the processing gas of body supply source 30,31,32 makes supply usefulness stream 36m, 36n, the 36o of its circulation getting along alone in the future to regulate the flow of vital energy, be provided with, the mass flow controller 36p and the valve 36q that can be suitable for big flow is set respectively in storing with stream 36j, 36k, 36l, and, the mass flow controller 36r and the valve 36s that use of for example low discharge that can finely tune of setting respectively in supplying with stream 36m, 36n, 36o.By adopting this structure, can when in handling gas tank 33,34, filling processing gas, adjust the flow of the processing gas that is fed in the chamber 2 meticulously according to the short time.
More than, preferred forms of the present invention has been described, still, the present invention is not limited to above-mentioned execution mode, and various changes can be arranged.In the above-described embodiment, be illustrated being applied in the example that downward portion electrode applies in the capacitive coupling type parallel flat plasma-etching apparatus of RIE formula of High frequency power, but, be not limited thereto, also can be applied in other the plasma processing apparatus such as ashing, CVD film forming, and, also can be applied in handled objects such as substrate are housed in and carry out in the container handling in general gas device gas treatment, beyond the plasma processing apparatus.In addition, in the above-described embodiment, the example in the processing that is applied in the glass substrate that FPD uses is illustrated, but is not limited thereto, can be applied in the general processing substrate such as semiconductor substrate, also can be applied in the processing of the handled object beyond the substrate.
Claims (18)
1. handle gas supply mechanism for one kind, it is characterized in that,
It handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in described container handling, this processing gas supply mechanism comprises:
Be used in described container handling, supplying with the processing gas supply source of handling gas;
Be used for temporary transient processing gas tank of storing from the processing gas of described processing gas supply source; With
To supply with described processing gas tank from the processing gas of described processing gas supply source, and the processing gas in the described processing gas tank will be supplied with processing gas communication parts in the described container handling,
Handle gas and temporarily be stored in the described processing gas tank, and in described container handling, supply with from described processing gas tank from described processing gas supply source.
2. a gas treatment equipment is characterized in that, comprising:
Accommodate the container handling of handled object;
In described container handling, supply with the processing gas supply mechanism of handling gas; And
To carrying out the exhaust unit of exhaust in the described container handling, and,
Under the state that handled object is housed in the described container handling, utilize described exhaust unit to carry out exhaust, utilize described processing gas supply mechanism to supply with simultaneously and handle gas, handled object is implemented predetermined processing,
Described processing gas supply mechanism comprises:
Be used in described container handling, supplying with the processing gas supply source of handling gas;
Be used for temporary transient processing gas tank of storing from the processing gas of described processing gas supply source; With
To supply with described processing gas tank from the processing gas of described processing gas supply source, and the processing gas in the described processing gas tank will be supplied with processing gas communication parts in the described container handling,
Handle gas and temporarily be stored in the described processing gas tank, and in described container handling, supply with from described processing gas tank from described processing gas supply source.
3. gas treatment equipment according to claim 2 is characterized in that,
Described processing gas communication parts comprise: the first processing gas flow path that is being connected with described processing gas supply source and described container handling; And from the described first second processing gas flow path of handling gas flow path branch and being connected with described processing gas tank,
Described processing gas supply mechanism is also supplied with in described container handling from described processing gas supply source and is handled gas.
4. gas treatment equipment according to claim 3 is characterized in that,
Be provided with a plurality of described processing gas tank, and, it is corresponding with the quantity of described processing gas tank and be provided with a plurality of described second and handle gas flow paths,
Described each second processing gas flow path has the stream of sending into that is used for processing gas is sent into described processing gas tank respectively; And be used for sending stream from what described processing gas tank was sent with handling gas.
5. gas treatment equipment according to claim 4 is characterized in that,
Comprise the control part of controlling described processing gas supply mechanism,
Described control part carries out following control: make and handle gas and supply with in described container handling by the described stream of sending from the part of described a plurality of processing gas tank, make simultaneously and handle gas and be stored in the remaining part or all of described a plurality of processing gas tank from described processing gas supply source by the described stream of sending into.
6. gas treatment equipment according to claim 3 is characterized in that,
Described second handles gas flow path has the stream of sending into that is used for processing gas is sent into described processing gas tank respectively; And be used for sending stream with handling gas from what described processing gas tank was sent,
Be provided with a plurality of described processing gas supply sources to supply with different multiple processing gas, and, described first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the described body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of described processing gas supply source and connects stream
The described second described stream of sending into of handling gas flow path is to connect stream branch from described first described each supply source of handling gas flow path.
7. gas treatment equipment according to claim 6 is characterized in that,
Comprise the control part of controlling described processing gas supply mechanism,
Described control part carries out following control: the processing gas be made up of regulation kind and ratio is sent after stream supplies with in described container handling by described from described processing gas tank, making the processing gas be made up of described regulation kind and ratio handle gas flow path from part or all of described a plurality of processing gas supply sources by described first supplies with in described container handling, meanwhile, make the processing gas of forming by the kind different and/or ratio, be stored in the described processing gas tank by the described stream of sending into from part or all of described a plurality of processing gas supply sources with described regulation kind and ratio.
8. gas treatment equipment according to claim 3 is characterized in that,
Be provided with a plurality of described processing gas tank, and, it is corresponding with the quantity of described processing gas tank and be provided with a plurality of described second and handle gas flow paths,
Described each second processing gas flow path has the stream of sending into that is used for processing gas is sent into described processing gas tank respectively; And be used for sending stream with handling gas from what described processing gas tank was sent,
Be provided with a plurality of described processing gas supply sources to supply with different multiple processing gas, and, described first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the described body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of described processing gas supply source and connects stream
Described each second described stream of sending into of handling gas flow path is to connect stream branch from described first described each supply source of handling gas flow path.
9. gas treatment equipment according to claim 8 is characterized in that,
Comprise the control part of controlling described processing gas supply mechanism,
Described control part carries out following control: the processing gas of being made up of regulation kind and ratio is supplied with in described container handling by the described stream of sending from the part of described a plurality of processing gas tank, and making the processing gas be made up of described regulation kind and ratio handle gas flow path from part or all of described a plurality of processing gas supply sources by described first supplies with in described container handling, meanwhile, make the processing gas of forming by the kind different and/or ratio, send into stream to be stored in described a plurality of processing gas tank remaining part or all by described from part or all of described a plurality of processing gas supply sources with described regulation kind and ratio.
10. according to each described gas treatment equipment in the claim 3～9, it is characterized in that,
Described first handles gas flow path has respectively: when making processing gas from described processing gas supply source be stored in the described processing gas tank and make the storage stream of its circulation; And when will supplying with in the described container handling and make the supply stream of its circulation from the processing gas of described processing gas supply source.
11. according to each described gas treatment equipment in the claim 2～10, it is characterized in that,
Described exhaust unit has the exhaust flow path that a plurality of and described container handling is being connected; And by described exhaust flow path to carrying out the exhaust apparatus of exhaust in the described container handling,
Be connected bypass flow path on the part in described processing gas communication parts and the described a plurality of exhaust flow paths, the processing gas that constitutes in the described processing gas communication parts can be discharged by described exhaust unit by described bypass flow path,
The described exhaust flow path that is connecting described bypass flow path also opens and closes by the upstream side of upstream freely at the connecting portion than itself and described bypass flow path.
12. according to each described gas treatment equipment in the claim 2～11, it is characterized in that,
In described container handling, also possess plasma and generate mechanism, it generates the plasma of the processing gas of being supplied with by described processing gas supply mechanism,
Described predetermined process is being to use the plasma treatment of the plasma of handling gas.
13. handle the gas supply method for one kind, it is characterized in that,
It handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in described container handling, prepare:
Be used in described container handling, supplying with the processing gas supply source of handling gas;
Be used for temporary transient processing gas tank of storing from the processing gas of described processing gas supply source; With
To supply with described processing gas tank from the processing gas of described processing gas supply source, and the processing gas in the described processing gas tank will be supplied with processing gas communication parts in the described container handling,
To handle gas and temporarily be stored in the described processing gas tank, and in described container handling, supply with from described processing gas tank from described processing gas supply source.
14. processing gas supply method according to claim 13 is characterized in that,
In advance by the first processing gas flow path that is being connected with described processing gas supply source and described container handling; And from described first handle gas flow path branch and be connected with described processing gas tank second handle gas flow path and constitute described processing gas communication parts,
Also in described container handling, supply with and handle gas from described processing gas supply source.
15. processing gas supply method according to claim 14 is characterized in that,
A plurality of described processing gas tank are set, and corresponding with the quantity of described processing gas tank and be provided with a plurality of described second and handle gas flow paths,
Have respectively and be used for sending handling gas into the stream of sending into of described processing gas tank; And be used for sending stream with handling gas from what described processing gas tank was sent, constitutes described each second processing gas flow path,
In described container handling, supply with processing gas from the part of described a plurality of processing gas tank by the described stream of sending, simultaneously, from described processing gas supply source by the described stream of sending at described a plurality of processing gas tank the remaining storage at body of regulating the flow of vital energy part or all.
16. processing gas supply method according to claim 14 is characterized in that,
Have respectively and be used for sending handling gas into the stream of sending into of described processing gas tank; And be used for sending stream with handling gas from what described processing gas tank was sent, constitute described second and handle gas flow path,
A plurality of described processing gas supply sources are set to supply with different multiple processing gas, and, handling gas flow path with described first constitutes to have and is branched off into supply source a plurality of and that be connected with the described body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of described processing gas supply source and connects stream
The described second described stream of sending into of handling gas flow path is connected stream branch from described first described each supply source of handling gas flow path,
From described processing gas tank by described send stream and in described container handling, supply with the processing gas of forming by regulation kind and ratio after, handle gas flow path from part or all of described a plurality of processing gas supply sources by described first and in described container handling, supply with the processing gas of forming by described regulation kind and ratio, meanwhile, described processing gas tank, store the processing gas of forming by the kind different and/or ratio from part or all of described a plurality of processing gas supply sources by the described stream of sending into described regulation kind and ratio.
17. processing gas supply method according to claim 14 is characterized in that,
A plurality of described processing gas tank are set, and corresponding with the quantity of described processing gas tank and be provided with a plurality of described second and handle gas flow paths,
Have respectively and be used for sending handling gas into the stream of sending into of described processing gas tank; And be used for sending stream with handling gas from what described processing gas tank was sent, constitutes described each second processing gas flow path,
A plurality of described processing gas supply sources are set to supply with different multiple processing gas, and, handling gas flow path with described first constitutes to have and is branched off into supply source a plurality of and that be connected with the described body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of described processing gas supply source and connects stream
The described second described stream of sending into of handling gas flow path is connected stream branch from described first described each supply source of handling gas flow path,
In described container handling, supply with the processing gas of forming by regulation kind and ratio from the part of described a plurality of processing gas tank by the described stream of sending, and handle gas flow path from part or all of described a plurality of processing gas supply sources by described first and in described container handling, supply with the processing gas of forming by described regulation kind and ratio, meanwhile, part or all store the processing gas by with described regulation kind and ratio different kind and/or ratio formed by the described stream of sending into described a plurality of processing gas tank remaining from part or all of described a plurality of processing gas supply sources.
18. the storage medium of an embodied on computer readable is characterized in that,
It is storing the control program of operation on computers,
Described control program makes the computer control processing unit according to the mode of implementing each described processing gas supply method in the claim 13～17 when carrying out.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006270823A JP5235293B2 (en) | 2006-10-02 | 2006-10-02 | Process gas supply mechanism, process gas supply method, and gas processing apparatus |
| JP2006-270823 | 2006-10-02 | ||
| JP2006270823 | 2006-10-02 |
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| CN101159228A true CN101159228A (en) | 2008-04-09 |
| CN101159228B CN101159228B (en) | 2012-09-05 |
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| CN200710154446XA Active CN101159228B (en) | 2006-10-02 | 2007-09-12 | Processing gas supplying mechanism, supplying method and gas processing unit |
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| JP (1) | JP5235293B2 (en) |
| KR (1) | KR100915740B1 (en) |
| CN (1) | CN101159228B (en) |
| TW (1) | TWI416618B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009283844A (en) * | 2008-05-26 | 2009-12-03 | Japan Steel Works Ltd:The | Semiconductor processing device |
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Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6318834U (en) * | 1986-07-23 | 1988-02-08 | ||
| KR100264445B1 (en) * | 1993-10-04 | 2000-11-01 | 히가시 데쓰로 | Plasma treatment equipment |
| TW299559B (en) * | 1994-04-20 | 1997-03-01 | Tokyo Electron Co Ltd | |
| JPH11117070A (en) * | 1997-10-14 | 1999-04-27 | Nissan Motor Co Ltd | Chemical vapor growth device |
| JP4204840B2 (en) * | 2002-10-08 | 2009-01-07 | 株式会社日立国際電気 | Substrate processing equipment |
| DE10247913A1 (en) * | 2002-10-14 | 2004-04-22 | Robert Bosch Gmbh | Process for the anisotropic etching of structures in a substrate arranged in an etching chamber used in semiconductor manufacture comprises using an etching gas and a passivating gas which is fed to the chamber in defined periods |
| US6902648B2 (en) * | 2003-01-09 | 2005-06-07 | Oki Electric Industry Co., Ltd. | Plasma etching device |
| TW200503081A (en) * | 2003-07-04 | 2005-01-16 | Ebara Corp | Substrate processing system |
-
2006
- 2006-10-02 JP JP2006270823A patent/JP5235293B2/en active Active
-
2007
- 2007-09-12 CN CN200710154446XA patent/CN101159228B/en active Active
- 2007-10-01 TW TW096136749A patent/TWI416618B/en not_active IP Right Cessation
- 2007-10-01 KR KR1020070098625A patent/KR100915740B1/en active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| TW200832540A (en) | 2008-08-01 |
| JP5235293B2 (en) | 2013-07-10 |
| TWI416618B (en) | 2013-11-21 |
| JP2008091625A (en) | 2008-04-17 |
| CN101159228B (en) | 2012-09-05 |
| KR20080031117A (en) | 2008-04-08 |
| KR100915740B1 (en) | 2009-09-04 |
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