CN101026101B - 膜接合方法、膜接合装置以及半导体器件制造方法 - Google Patents

膜接合方法、膜接合装置以及半导体器件制造方法 Download PDF

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CN101026101B
CN101026101B CN2006101000269A CN200610100026A CN101026101B CN 101026101 B CN101026101 B CN 101026101B CN 2006101000269 A CN2006101000269 A CN 2006101000269A CN 200610100026 A CN200610100026 A CN 200610100026A CN 101026101 B CN101026101 B CN 101026101B
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film
substrate
wafer
laser beam
chip attachment
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CN101026101A (zh
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新城嘉昭
下别府佑三
手代木和雄
吉本和浩
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Socionext Inc
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Fujitsu Semiconductor Ltd
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    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/04—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the partial melting of at least one layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B29C65/14—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure using wave energy, i.e. electromagnetic radiation, or particle radiation
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    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
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    • B29C65/1629—Laser beams characterised by the way of heating the interface
    • B29C65/1654—Laser beams characterised by the way of heating the interface scanning at least one of the parts to be joined
    • B29C65/1658—Laser beams characterised by the way of heating the interface scanning at least one of the parts to be joined scanning once, e.g. contour laser welding
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Abstract

本发明提供膜接合方法、膜接合装置以及半导体器件制造方法。该膜接合方法能够在不引起任何断裂的情况下接合芯片贴装膜。利用膜设置辊和膜接合辊朝着接合有表面保护胶带的晶片按压芯片贴装膜，并向辊之间的区域照射具有预定形状的激光束。在旋转移动膜设置辊和膜接合辊的同时，随着它们的移动在晶片上扫描激光束。通过跟随膜设置辊的膜接合辊，朝着晶片按压被激光束熔融的芯片贴装膜部分，以将芯片贴装膜接合到晶片。由于利用激光束来熔融芯片贴装膜从而将芯片贴装膜接合到晶片上，因此即使晶片较薄并且强度减小，也能使晶片避免例如由表面保护胶带的热收缩带来的损坏。

Description

膜接合方法、膜接合装置以及半导体器件制造方法
技术领域
本发明涉及一种膜接合方法、膜接合装置和半导体器件制造方法，更具体地，涉及一种将芯片贴装(die bond)膜接合到半导体衬底(晶片)的膜接合装置以及包括接合芯片贴装膜的步骤的半导体器件制造方法。
背景技术
通常在半导体IC(集成电路)的制造过程中，首先利用表面保护胶带覆盖经过预定晶片处理的半导体衬底(晶片)的表面(半导体元件形成表面)，然后研磨晶片的背(后)表面(背面研磨处理)以减小晶片的厚度。
在背面研磨处理之后，将表面保护胶带剥离晶片表面，并将切割带(dicing tape)接合到晶片的背表面。在这种状态下，在晶片上从其前表面侧进行分割(singulation)处理，从而形成多个半导体元件(芯片)。
然后，将分割后的芯片与切割带分离，并对半导体元件接收容器的预定部分执行芯片贴装处理。
传统上，在芯片贴装处理中，广泛采用如下方法作为将芯片接合到诸如引线框之类的支撑衬底的方法，即，首先在支撑衬底的表面上涂覆粘合剂，然后利用粘合剂将芯片固定到支撑衬底。
但近年来还采用另一种方法，其中将用于固定半导体元件的粘合膜(芯片贴装膜)接合到经过背面研磨处理的晶片的背表面，然后分割晶片。
根据这种方法，可以经由接合到芯片背表面的厚度小且均匀的芯片贴装膜将分割后的芯片固定到支撑衬底，因此不仅能够将芯片精确地固定到预定位置，而且能进一步减小芯片厚度(高度)。
上述芯片贴装膜包括在常温下具有粘合特性的芯片贴装膜或者在加热时呈现粘合特性的热塑性芯片贴装膜。热塑性芯片贴装膜的优点在于其在制造工艺期间易于处理。
图20示出用于将热塑性芯片贴装膜接合到晶片上的传统方法。
在将热塑性芯片贴装膜100接合到晶片101的背表面的过程中，采用如下方法，其中从晶片的与接合芯片贴装膜100的表面(背表面)相对的表面，即从晶片的前表面(半导体元件形成表面)加热晶片，并且在此状态下，通过胶辊103朝着晶片的背表面(接合表面)按压芯片贴装膜100。
此外，还提出另一种接合热塑性芯片贴装膜的方法，其中不加热晶片的整个表面、而只加热正在进行接合的表面部分来逐步接合芯片贴装膜。
例如，提出了如下两种方法：一种方法是利用具有加热机构的辊将芯片贴装膜接合到晶片上，另一种方法是采用含有加热及冷却机构的工作台(table)，在将晶片放置于工作台上之后，根据用于朝向晶片按压芯片贴装膜的辊的位置来局部控制工作台的加热和冷却(参见日本待审专利公开No.2004-186240)。
近来，随着对进一步减小半导体器件尺寸和厚度的需求的增大，需要使晶片进一步变薄，因而对于制造不大于100μm厚度的晶片的需求增大.
如上所述，通常在形成半导体元件之后进行背面研磨来将晶片加工成较小厚度，但是薄的晶片自然强度低，因而易于断裂。
鉴于此，例如人们尝试通过在中央形成有小孔的保护衬底上放置晶片、并在经小孔固定地吸附(suck)晶片的同时对晶片进行研磨处理或者转移晶片，来避免变薄的晶片断裂(参见日本待审专利公开No.2004-153193)。
当采用常用的传统芯片贴装膜接合方法时，即，采用如下方法时，其中在将表面保护胶带接合到晶片的主表面之后对半导体衬底(晶片)的背表面进行背面研磨、然后在加热晶片的整个表面的同时将芯片贴装膜接合到晶片的背表面，在表面保护胶带上会出现相对较大的热膨胀或热收缩。
结果，厚度为接近100μm或以下的变薄的晶片不能承受表面保护胶带的这种热变形，从而导致晶片的断裂。
发明内容
鉴于上述问题提出本发明，本发明的第一目的是提供一种膜接合方法以及实施该接合方法的膜接合装置，该方法能够将诸如芯片贴装膜之类的膜接合到晶片的背表面，而不会导致表面保护胶带的热变形，因此不会使晶片发生断裂。
本发明的第二目的是提供一种半导体器件制造方法，其能够在将诸如芯片贴装膜之类的膜接合到晶片上时避免晶片的断裂。
为了实现上述第一目的，按照本发明的第一方案，提供一种膜接合方法，包括如下步骤：在待处理的衬底上放置膜；从与该膜面向该衬底的表面相对的表面一侧，在该膜的一部分上选择性地照射激光束以选择性地熔融该膜的该部分，该膜的该部分设置在该衬底上；以及朝着待处理的衬底按压处于熔融状态的该膜的该部分，从而将膜接合到待处理的衬底上。
为了实现上述第一目的，按照本发明的第二方案，提供一种膜接合装置，包括：第一按压单元，用以朝着待处理的衬底按压待处理的衬底上放置的膜；照射单元，用以从与该膜面向该衬底的表面相对的表面一侧在朝着待处理的衬底按压的膜的一部分上选择性地照射激光束，该膜的一部分设置在该衬底上；以及第二按压单元，用以朝着待处理的衬底按压被激光束照射的膜。
为了实现上述第二目的，按照本发明的第三方案，提供一种半导体器件制造方法，包括如下步骤：在半导体衬底的一个主表面上形成多个半导体元件；将表面保护胶带接合到半导体衬底的所述一个主表面上；通过研磨半导体衬底的另一主表面来减小半导体衬底的厚度；在半导体衬底的所述另一主表面上覆盖芯片贴装膜；从半导体衬底的所述一个主表面除去表面保护胶带；通过切割和分离半导体衬底来分割多个半导体元件，其中将芯片贴装膜接合到半导体衬底的所述另一主表面上的步骤还包括如下步骤：将芯片贴装膜置于所述半导体衬底上，从与该芯片贴装膜面向该衬底的表面相对的表面一侧在置于半导体衬底上的芯片贴装膜的一部分上选择性地照射激光束，以加热芯片贴装膜，从而将被加热部分接合到半导体衬底，该芯片贴装膜的一部分设置在该衬底上。
在结合附图的下述详细描述中，本发明的上述和其它目的、特点和优点将变得更为明显，其中附图以举例的方式示出了本发明的优选实施例.
附图说明
图1是根据本发明第一实施例的半导体器件制造工序的流程图。
图2是示出表面保护胶带的接合工序的图。
图3是示出背面研磨工序的图。
图4是示出芯片贴装膜的接合工序的图。
图5是示出表面保护胶带的剥离工序和切割带的接合工序的图。
图6是示出切割工序的图。
图7是示出芯片贴装工序的图。
图8是根据第一实施例的芯片贴装膜的接合方法的图。
图9是示出激光扫描方法实例的图。
图10是示出激光光学***实例的图。
图11是示出膜接合装置结构的图。
图12是示意性地示出膜接合装置结构的图(1)，其用于解释利用膜接合装置来接合芯片贴装膜的工序。
图13是示意性地示出膜接合装置结构的图(2)，其用于解释利用膜接合装置来接合芯片贴装膜的工序。
图14是示意性地示出膜接合装置结构的图(3)，其用于解释利用膜接合装置来接合芯片贴装膜的工序。
图15是示意性地示出膜接合装置结构的图(4)，其用于解释利用膜接合装置来接合芯片贴装膜的工序。
图16是示意性地示出膜接合装置结构的图(5)，其用于解释利用膜接合装置来接合芯片贴装膜的工序。
图17是根据本发明第二实施例的芯片贴装膜接合方法的图。
图18是根据本发明第三实施例的芯片贴装膜接合方法的图。
图19是示出激光扫描方法的变化例的图。
图20是示出将热塑性芯片贴装膜接合到晶片上的传统方法的图。
具体实施方式
现在参照示出优选实施例的附图来详细描述本发明。在实施例中，以举例的方式，将半导体衬底(晶片)用作待处理的衬底，并将芯片贴装膜接合到该晶片上。
首先，描述本发明的第一实施例。
图1示出根据第一实施例的半导体器件制造工序的流程。图1所示的工艺步骤在已在待处理的半导体衬底(晶片)上形成了半导体元件之后执行。
此外，图2至图7是示出图1中出现的各半导体器件制造工艺步骤的示意图。图2示出表面保护胶带的接合工序，图3示出背面研磨工序。此外，图4示出芯片贴装膜的接合工序，图5示出表面保护胶带的剥离工序和切割带的接合工序。此外，图6示出切割工序，图7示出芯片贴装工序。
在执行用以形成多个半导体元件(器件)所需的晶片处理(预处理)之后，在晶片1的表面(一个主表面)上形成所述多个半导体元件，然后如图2所示，利用辊3将由烯烃基材料或PET(聚乙烯对苯二酸盐)制成的表面保护胶带2接合到晶片1的表面(器件形成表面)(图1：步骤S1)。
表面保护胶带2具有带状部分。在接合后，将表面保护胶带2沿着晶片1的外部形状切断，从而将表面保护胶带2的接合部分与其带状部分分离。
然后，进行背面研磨处理，用以研磨晶片1的背表面(图1：步骤S2)。
如图3所示，在背面研磨处理中，将晶片1设置在旋转工作台4上，且其背表面朝上，并在旋转该旋转工作台4的同时通过旋转研磨轮5来研磨晶片1的背表面。
随后，如图4所示，将芯片贴装膜6接合到待处理的晶片1的背表面(图1：步骤S3)。芯片贴装膜6由聚酰亚胺树脂或环氧树脂制成，并且其膜厚设定为例如约15μm。
根据本实施例，在芯片贴装膜的接合工序中，利用辊作为朝着晶片1的背表面按压芯片贴装膜6的装置，并且利用激光束7作为加热手段(热源)。
更具体地，通过膜设置辊9a和膜接合辊9b(它们可旋转且相互平行间隔设置)朝着晶片1的背表面按压芯片贴装膜6，其中芯片贴装膜6在置于晶片1背表面上的状态下为带状。
膜设置辊9a和膜接合辊9b具有例如由橡胶制成的弹性表面，并且这些弹性部分大小与芯片贴装膜6的宽度相一致。
另一方面，通过含有透镜***的激光光学***来调节激光束7，使得照射在晶片7表面上的激光束形状为矩形，并且使激光束以平行于辊9a和9b的状态照射到在膜设置辊9a与膜接合辊9b之间延伸的区域。
通过激光束7的照射来熔融由膜设置辊9a按压到晶片1上的芯片贴装膜6，并通过膜接合辊9b朝着晶片1的背表面按压被照射且通过该照射被熔融的部分，从而将芯片贴装膜6接合到晶片1的背表面。
如上所述，在将芯片贴装膜6接合到晶片1上时，利用作为加热手段的激光束7将热能局部和选择性地施加给芯片贴装膜6，从而能够局部和选择性地熔融芯片贴装膜6。
因此，与像传统方法那样例如通过加热器加热晶片的整个表面的情况相比，能够抑制晶片温度的升高，由此避免表面保护胶带2出现热变形，例如热膨胀或热收缩。
沿着晶片1的外部形状切断接合到晶片1背表面的芯片贴装膜6，由此将膜6的接合部分与其带状部分分离。
在将芯片贴装膜6接合到晶片1的背表面之后，将表面保护胶带2剥离晶片1的前表面，如图5所示，并将晶片1的背表面接合到胶带架(tape frame)10上的切割带11(图1：步骤S4)。
请注意，切割带11具有粘合特性，其与接合到晶片1背表面的芯片贴装膜6一起来固定晶片1。
此外，标号12表示用于从晶片1前表面去除或剥离表面保护胶带2的胶带去除带。在例如通过辊(未示出)将胶带去除带12接合到表面保护胶带2之后，拖动胶带去除带12从而将表面保护胶带2从晶片1的前表面剥离。
然后，如图6所示，利用切割刀片13来进行切割晶片1的晶片切割处理，由此分割形成于晶片1上的多个半导体器件(图1：步骤S5).
之后，如图7所示，通过卡盘(chuck)15来拾取分割后的半导体元件14中的每个合格(无瑕疵)品，并将其转移到支撑衬底16(比如引线框)的岛状部分16A上。
请注意，在拾取半导体元件14时，切割带11的粘合力在经紫外线加热或照射之后减小。
将接合到晶片1背表面的芯片贴装膜6熔融、加压并固化在支撑衬底16的岛状部分16A上，从而将半导体元件14固定到岛状部分16A(图1：步骤S6)。
如上所述，在形成器件(半导体元件)之后，执行一直到芯片贴装工序的工序。
现在，更详细地描述上述步骤S3中的、利用激光束来接合芯片贴装膜6的方法。
图8示出根据第一实施例接合芯片贴装膜的方法。
如上所述，将表面保护胶带2接合到晶片1的器件形成表面，并将芯片贴装膜6接合到经过了背面研磨处理的晶片1的背表面。
通过相互平行设置的膜设置辊9a和膜接合辊9b朝着晶片1的背表面至少按压芯片贴装膜6的位于辊9a和9b之间的区域。
然后，经透镜将调节为具有例如预定矩形形状的激光束照射到位于膜设置辊9a与膜接合辊9b之间区域的芯片贴装膜6上。
在相对于晶片1旋转移动膜设置辊9a和膜接合辊9b的同时，激光束7随着辊9a和9b的移动而移动。
图9示出根据本发明第二实施例的激光扫描方法实例。
在将形成为矩形的激光束照射到位于晶片1背表面上的芯片贴装膜6上时，期望将该矩形的宽度(沿纵向的宽度，即沿正交于激光束7移动方向的方向的长度)设置为接近晶片1直径的1.1倍长的值。
形成为上述形状的激光束7从晶片的一边、经其中心移动(扫描)到另一边，如图9中的箭头S所示，由此将激光束7照射到晶片1的整个背表面上。
在如上所述扫描激光束7时，图8所示的膜设置辊9a和膜接合辊9b在激光束7的移动方向上、分别在激光束7之前和之后随着激光束7协调移动。
如上所述形成为大致矩形的激光束7可例如通过图10所示的激光光学***来实现。图10也示出了形成于该***的主要部分上的激光束截面形状(A至D)。
图10所示的激光光学***20包括激光束振荡器21、圆柱形平凹透镜22、线性掩模23以及圆柱形平凸透镜24。
在激光光学***20中，从激光束振荡器21射出的圆形截面(A)的激光束7通过圆柱形平凹透镜22变形为椭圆形截面(B)的激光束，然后通过线性掩模23变形为矩形截面(C)的激光束。进而，矩形截面(C)的激光束通过圆柱形平凸透镜24变为具有更窄宽度的矩形截面(D)的激光束。
之后，将具有更窄宽度的矩形截面(D)的激光束照射到位于待处理的晶片1上的芯片贴装膜6上。
基于芯片贴装膜6的材料、晶片1的厚度、表面保护胶带2的材料等，选择用于将激光束7照射到位于晶片1上的芯片贴装膜6的条件。例如，可以在输出功率为0.1至100w、扫描速度为0.1至500mm/s的照射条件下照射波长为100至1000nm的激光束。
在选择照射条件时，要使得激光束能够熔融芯片贴装膜6，同时能够抑制表面保护胶带2的热膨胀和热收缩。
在将芯片贴装膜6接合到晶片1的背表面时，使用激光光学***20，并且如图8所示，沿对应于激光束7扫描方向的方向在移动膜接合辊9b之前移动膜设置辊9a，并以跟随膜设置辊9a和激光束7的方式移动膜接合辊9b。
更具体地，在利用膜设置辊9a和膜接合辊9b朝着晶片1按压芯片贴装膜6时，激光束7仅照射到紧接在膜设置辊9a之后的区域，由此将芯片贴装膜6的被照射部分熔融，并且通过在激光束7之后立即移动膜接合辊9b，朝着晶片1按压熔融的部分，从而将芯片贴装膜6接合到晶片1。
在晶片1的整个背表面上进行了上述操作时，能够将芯片贴装膜6均匀且有效地接合到晶片1，同时能够避免接合到晶片1另一表面的表面保护胶带2出现热变形，例如热膨胀或热收缩。
图11示出在将芯片贴装膜6接合到晶片1的膜接合处理中采用的膜接合装置的结构。
如图11所示，膜接合装置30包括：第一晶片盒(case)31，用于在待处理的晶片1上进行了背面研磨处理之后、并在将芯片贴装膜6接合到其上之前，保存待处理的晶片1；以及第二晶片盒32，用于在将芯片贴装膜6接合到晶片1之后保存晶片1。
此外，膜接合装置30还包括：晶片定中心(centering)装置33，用于将待处理的晶片1中心对准；以及膜接合工作台34，用于进行将芯片贴装膜6接合到晶片1的膜接合处理。
而且，膜接合装置还包括晶片转移自动装置(robot)35，用于将保存在第一晶片盒31内的待处理的晶片1转移到晶片定中心装置33上，并将置于晶片定中心装置33上的待处理的晶片1传送到膜接合工作台34上，以及用于将置于膜接合工作台34上的、与芯片贴装膜6接合的晶片1转移到第二晶片盒32，以在该第二晶片盒32内保存晶片1。
此外，膜接合装置34还具有膜接合激光照射装置38和膜切割激光照射装置39，它们置于膜接合工作台34的附近，并分别通过光纤37a和37b连接到激光振荡器36。
膜接合激光照射装置38包括激光光学***(其由激光振荡器36和透镜形成)，并能够在膜接合工作台34的预定区域上扫描形成为预定形状的激光束7。另一方面，膜切割激光照射装置39在膜接合工作台34上沿着晶片1的外部形状来切断接合到晶片1的芯片贴装膜6，由此将芯片贴装膜6的接合部分与其带状部分分离。
利用膜设置辊9a和膜接合辊9b(它们均被设置为能够在芯片贴装膜6上从膜缠绕辊侧朝着膜送料辊40a移动)以及最靠近膜缠绕辊40b的膜固定辊41，向从膜送料辊40a朝着膜缠绕辊40b送出的带状芯片贴装膜6施加恒定张力。
在将待处理的晶片1放置在膜接合工作台34上之后，膜设置辊9a和膜接合辊9b移动，以便朝着晶片1按压芯片贴装膜6。此时，膜接合激光照射装置38也与膜设置辊9a和膜接合辊9b一起移动。
接下来，将参照图11和12-16描述利用如上所述配置的膜接合装置30来进行用以将芯片贴装膜6接合到晶片1的膜接合处理方法。
图12-16是用于说明利用膜接合装置来接合芯片贴装膜的工序的示意图。
此处假定膜接合装置30处于将芯片贴装膜6接合到晶片之前的状态，即，处于图11所示的上述状态。为便于说明，将此状态称为膜接合装置30的初始状态。
在利用膜接合装置30将芯片贴装膜6接合到晶片1的背表面时，如图11所示，晶片转移自动装置35从第一晶片盒31取出在其中保存的晶片1，并将该晶片1转移到晶片定中心装置33。
晶片1在接合芯片贴装膜的工序之前的工序中，具有接合到晶片1的第一主表面(前表面)的表面保护胶带2。此外，将晶片1以其背表面朝上的状态保存在第一晶片盒31中。
晶片转移自动装置35取出处于上述状态下的晶片1，并转移其背表面朝上的晶片1。
晶片定中心装置33进行用以将转移到该晶片定中心装置的晶片1中心对准的定中心处理。由于该定中心处理，能够在后续的工序中将晶片1的中心与待接合到晶片1的胶带材料的中心沿其宽度方向对准。这能够以高精度沿着晶片1的外部形状切断胶带材料，以使胶带材料的外部形状与晶片1的外部形状相匹配。
然后，晶片转移自动装置35将经过了晶片定中心装置33的定中心处理的晶片1转移到膜接合工作台34上，并且在晶片1置于膜接合工作台34上时使晶片1的背表面朝上。这种状态的晶片转移自动装置35如图12所示。
之后，如图13所示，晶片转移自动装置35再次返回到第一晶片盒31的位置，开始准备转移待处理的下一晶片1。
另一方面，在膜接合工作台34中，进行将芯片贴装膜6接合到待处理的晶片1背表面的膜接合处理，如图14所示。
芯片贴装膜6的宽度大于晶片1的最大直径(直径长度)。
在膜接合处理中，晶片1和芯片贴装膜6以如下方式相互接合，即，晶片1的中心与芯片贴装膜6的中心沿其宽度方向相互对准。
在接合芯片贴装膜6时，膜设置辊9a朝着膜送料辊40a移动，并且膜接合激光照射装置38和膜接合辊9b以跟随膜设置辊9a的方式移动。
由此，在通过移动膜设置辊9a而朝着晶片1按压芯片贴装膜6时，利用从在膜设置辊9a之后移动的膜接合激光照射装置38射出的激光束7照射芯片贴装膜6。将芯片贴装膜6的被照射部分熔融并通过在膜接合激光照射装置38之后移动的膜接合辊9b被朝着晶片1按压，由此将芯片贴装膜6接合到晶片1。
在执行上述膜接合处理期间，如图14所示，晶片转移自动装置35从第一晶片盒31取出待处理的下一晶片1，并将其转移到晶片定中心装置33。晶片定中心装置33对转移的晶片1进行定中心处理。
在晶片定中心装置33的操作期间，晶片转移自动装置35在膜接合工作台34附近等待，以便在接合芯片贴装膜6之后转移膜接合工作台34上的晶片。
在将芯片贴装膜6接合到晶片1的整个背表面上之后，膜接合辊9b和膜接合激光照射装置38移动以朝着膜固定辊41后退，如图15所示。
在上述状态下，沿着接合了芯片贴装膜6的晶片1的外部形状、从膜切割激光照射装置39照射激光束42，并沿着晶片1的外部形状切断芯片贴装膜6，由此将接合到晶片1的背表面的芯片贴装膜6与其带状部分分离.
随后，在膜切割激光照射装置39后退到其初始位置之后，晶片转移自动装置35将膜接合工作台34上的晶片1(即，接合了芯片贴装膜6的晶片1)转移到第二晶片盒32。
然后，膜设置辊9a朝着膜固定辊41移动以便返回到其初始位置，并且将芯片贴装膜6从膜送料辊40a卷取到膜缠绕辊40b时，膜接合装置30处于图12所示的状态，从而能够转移由晶片定中心装置33进行了定中心处理的下一晶片1。
此后，重复执行上述处理，一直到与待处理的晶片1数量相一致的次数为止。
如前所述，在第一实施例中，通过膜设置辊9a和膜接合辊9b朝着晶片1按压芯片贴装膜6，并将激光束7照射到位于膜设置辊9a与膜接合辊9b之间的区域。
然后，随着膜设置辊9a的移动而移动激光束7，并且膜接合辊9b以跟随膜设置辊9a和激光束7的方式移动，由此通过膜接合辊9b朝着晶片1按压被激光束7照射的芯片贴装膜6的熔融部分，从而将芯片贴装膜6接合到晶片1。
这能够均匀地将芯片贴装膜6接合到晶片1，同时避免了例如在利用加热器等加热晶片1的整个表面时导致的、表面保护胶带2的热膨胀或热收缩的发生。
接下来，将描述本发明的第二实施例。
图17示出了根据第二实施例的接合芯片贴装膜的方法。
请注意在图17中，以相同的标号表示与图8所示的那些组成元件相同的元件，并且省略其说明。
在根据本实施例的接合芯片贴装膜6的方法中，通过向芯片贴装膜6的被照射了激光束的部分吹送气体，朝着晶片1按压所述部分。
更具体地，通过预定透镜8a调节激光束7，以使其具有用以照射到芯片贴装膜6的预定形状。通过管嘴50来固定透镜8a，该管嘴50具有按照激光束7的形状设置的开口50a。
在本实施例中，在管嘴50中设置导气孔51，以便从导气孔51压入气体，并将气体从管嘴前端吹入芯片贴装膜6的被照射部分。
由此，在将芯片贴装膜6接合到晶片1的背表面(该背表面上接合有表面保护胶带并且该背表面经过了背面研磨处理)的过程中，通过沿激光束7的扫描方向移动的膜设置辊9a，朝着晶片1的背表面按压芯片贴装膜6。将激光束7照射到紧随在膜设置辊9a之后的区域，并从管嘴50将喷射气体(氮气或氮氧混合物)发送到被照射的区域上。
更具体地，通过从管嘴50吹送的气体朝着晶片1的背表面按压芯片贴装膜6，同时该芯片贴装膜6通过激光束7的照射熔融，由此将芯片贴装膜6接合到晶片1的背表面。
同样地，通过接合芯片贴装膜6的上述方法，与第一实施例类似，能够将芯片贴装膜6均匀地接合到晶片1的背表面，同时避免表面保护胶带2的热膨胀等的出现。
请注意，根据第二实施例的上述激光束照射/按压方法能够应用于在上述第一实施例中膜接合装置30所采用的激光束7的扫描方法以及激光光学***20。
更具体地，能够改变采用根据第一实施例的膜接合装置30的膜设置辊9a、膜接合辊9b和膜接合激光照射装置38的芯片贴装膜的接合机构，将其改为采用如图17所示第二实施例的芯片贴装膜的接合机构，由此形成膜接合装置。
此时，对于除了将芯片贴装膜6接合到晶片1背表面的膜接合处理之外的处理(取出晶片1、转移、保存等)，可以执行与膜接合装置30所执行的操作相同的操作.
请注意，在第二实施例中，将气体从管嘴50吹送到被激光束照射的部分上，因此在设置激光束7的照射条件时，需要考虑如下因素来设定所述条件：芯片贴装膜6的材料，以及由气体的吹送所导致的芯片贴装膜6的温度降低。
接下来，将描述本发明的第三实施例。
图18示出根据第三实施例的接合芯片贴装膜的方法。
请注意在图18中，以相同的标号表示与图8中所示的那些组成元件相同的元件，并省略其具体说明。
在根据本实施例的接合芯片贴装膜6的方法中，利用透光平板例如玻璃板朝着晶片1按压芯片贴装膜6的被激光束照射的部分。
更具体地，如图18所示，将具有表面保护胶带2的待处理的晶片1(其中表面保护胶带2接合到该晶片的前表面)保存在容器60中，其中表面保护胶带侧朝下，并且芯片贴装膜6放置在晶片1的背表面上。
在上述状态下，经由例如丙烯腈聚丁橡胶(NBR)制成的填料(packing)61将玻璃板62放置在容器60上。
请注意，容器60包括排放/引入线路60a，用于在玻璃板62经由填料61放置在容器60上的状态下使容器60内部减压或恢复压力。
容器60的深度被设置为，在容器60经由填料61被玻璃板62密封的状态下、当通过经排放/引入线路60a从容器60汲取气体来拖动玻璃板62时，玻璃板62能够朝着晶片1按压芯片贴装膜6。
之后，通过排放/引入线路60a来排放容器60内的气体，以便解压，从而将容器60的内部保持在低压气氛中。通过解压处理，玻璃板62被引向容器60，由此朝着晶片1的背表面按压芯片贴装膜6。
在上述状态下，经透镜8a形成为预定形状的激光束7在经玻璃板62透射后照射到芯片贴装膜6上。结果将芯片贴装膜6的被照射部分加热并熔融，并在此时由玻璃板62按压所述被照射部分，由此将芯片贴装膜6接合到晶片1的背表面。
此时，通过根据第一实施例的扫描方法和激光光学***20，从晶片1的一边、经其中心到其另一边扫描在照射时形成为矩形的激光束7。
在如上所述将芯片贴装膜6接合到晶片1的背表面之后，停止经由排放/引入线路60a的排放，并且恢复预定气压，之后去除玻璃板62，并取出接合了芯片贴装膜6的晶片1。
在继续进行上述膜接合处理时，将待处理的下一晶片1容置在容器60中，并通过相同过程接合芯片贴装膜6。
同样地，通过接合芯片贴装膜6的上述方法，与第一实施例类似，能够将芯片贴装膜6均匀地接合到晶片1的背表面，同时避免表面保护胶带2的热膨胀等的出现。
接下来，将描述根据本发明的第四实施例。
尽管在第一至第三实施例中描述了这样的情况，即在晶片1上扫描形成为矩形(其宽度比晶片1的直径窄，而长度比晶片1的直径长)的激光束7，由此使激光束7最终照射到晶片1的整个背表面上，但是激光束7的形状和/或扫描方法并不限于上述实施例中的任何特定形状和/或扫描方法.
图19示出激光束的移动(扫描)方法(激光扫描方法)的变化例。
根据第四实施例，激光束形成为环形或矩形的光点形状，并且如图19所示的箭头S2所指的，以平行往复的方式或Z字形方式在芯片贴装膜上扫描激光束。
同样地，通过对形成为所述光点形状的激光束7S进行扫描的上述扫描方法，最终也能通过激光束7S照射晶片1上芯片贴装膜的整个背表面。
在如上所述照射具有所述光点形状的激光束7S时，能够使激光束7S所照射的照射面积小于如第一至第三实施例中使用的具有细长矩形形状的激光束所照射的照射面积。因此，能够更有效地避免表面保护胶带2的热膨胀等的出现。
尽管可以将扫描具有所述光点形状的激光束7S的上述扫描方法照原样应用于如第一至第三实施例中所示的芯片贴装膜6的接合，但是也可以在例如根据需要修改膜设置辊9a的移动方法之后将上述扫描方法应用于所述接合。
同样地，在采用扫描所述光点形状的激光束7S的上述扫描方法时，可以根据芯片贴装膜6的材料等正确地设定激光照射条件。
请注意，同样地，在如上所述照射具有所述光点形状的激光束7S时，至少沿着激光束的移动方向在激光束之前、之后吹送气体(氮气或氮氧混合物)。更具体地，通过激光束7S的照射熔融芯片贴装膜6，同时通过吹送气体朝着晶片1的背表面按压芯片贴装膜6，由此将芯片贴装膜6接合到晶片1的背表面。
类似于第二实施例，从设置于激光束照射管嘴***的排气部或者与激光束照射管嘴分离地设置的排气部、朝着待处理的晶片1吹送气体；或者通过将气体吹到晶片1的整个背表面上来吹送气体。通过吹送气体朝着晶片1的背表面按压芯片贴装膜6的熔融部分，并将该熔融部分接合到晶片1的背表面。
如上所述，在本发明的上述实施例中，将激光束7应用于热塑性芯片贴装膜6的接合。将激光束7照射到芯片贴装膜6上以选择性地将其熔融，并朝着晶片1按压熔融的芯片贴装膜6，由此将它们接合。
由此，即使将晶片1加工得较薄并减小其强度，也能够在将芯片贴装膜6接合到晶片1时避免晶片1损坏，从而能够以高成品率制造半导体器件。
请注意，尽管在上述描述中以举例的方式将芯片贴装膜6接合到晶片1，但是本发明不限于此，本发明既适用于将芯片贴装膜6接合到晶片1，也同样适用于将不同类型的膜接合到晶片1。此外，本发明不仅可适用于将膜接合到晶片1，也同样适用于将膜接合到不同类型的衬底。
根据本发明，在将被加热的膜接合到变薄的衬底(晶片)的一个主表面时，能够在不受预先接合到晶片另一主表面的表面保护胶带的热变形影响的条件下，将该膜接合到晶片。
因此，能够在不引起变薄的晶片破裂或断裂的情况下提高半导体器件的制造成品率。
上述仅以示例的方式描述了本发明的原理。由于本领域技术人员易于进行多种改型和变化，因此本发明不限于所示出和描述的具体结构和应用，所有的适当改型和等效变化都应视为落入权利要求及其等同方案所界定的发明范围范围中。

Claims (23)

1.一种膜接合方法，包括如下步骤：
在衬底上设置膜；
从与该膜面向该衬底的表面相对的表面一侧，选择性照射激光束至该膜的一部分上，以选择性地熔融该膜的该部分，其中该膜的该部分设置在该衬底上；以及
朝着该衬底按压处于熔融状态的该膜的该部分，以将该膜结合到该衬底。
2.如权利要求1所述的膜接合方法，其中该衬底是半导体衬底。
3.如权利要求1所述的膜接合方法，其中所述朝着该衬底按压处于熔融状态的膜部分的步骤包括：向所述处于熔融状态的膜部分吹送气体。
4.如权利要求1所述的膜接合方法，其中所述选择性照射激光束的步骤包括：在该衬底上扫描激光束。
5.如权利要求1所述的膜接合方法，其中所述朝着该衬底按压处于熔融状态的膜部分的步骤包括：利用辊朝着该衬底按压处于熔融状态的所述膜部分。
6.如权利要求1所述的膜接合方法，其中所述朝着该衬底按压处于熔融状态的膜部分的步骤包括：利用玻璃板朝着该衬底按压所述处于熔融状态的膜部分。
7.一种膜接合方法，包括如下步骤：
利用第一膜覆盖衬底的一个主表面；
在该衬底的另一主表面上设置第二膜；
从与该第二膜面向该衬底的表面相对的表面一侧，选择性照射激光束至所述第二膜的一部分上，以选择性地熔融所述第二膜的该部分，该第二膜的该部分设置在该衬底上；以及
朝着该衬底按压处于熔融状态的第二膜的该部分，以将所述第二膜接合到该衬底。
8.如权利要求7所述的膜接合方法，其中该衬底是半导体衬底。
9.如权利要求7所述的膜接合方法，其中覆盖所述衬底的一个主表面的所述第一膜是表面保护胶带。
10.如权利要求7所述的膜接合方法，其中接合到所述衬底另一主表面的所述第二膜是芯片贴装膜。
11.如权利要求7所述的膜接合方法，其中所述朝着该衬底按压处于熔融状态的第二膜部分的步骤包括：向处于熔融状态的所述第二膜部分吹送气体。
12.如权利要求7所述的膜接合方法，其中所述选择性照射激光束至所述第二膜上的步骤包括：在该衬底上扫描激光束。
13.如权利要求7所述的膜接合方法，其中所述朝着该衬底按压处于熔融状态的第二膜部分的步骤包括：利用辊朝着该衬底按压所述处于熔融状态的第二膜部分。
14.如权利要求7所述的膜接合方法，其中所述朝着该衬底按压处于熔融状态的第二膜部分的步骤包括：利用玻璃板朝着该衬底按压所述处于熔融状态的第二膜部分。
15.一种膜接合装置，包括：
第一按压单元，用以朝着衬底按压置于该衬底上的膜；
照射单元，用以从与该膜面向该衬底的表面相对的表面一侧选择性地照射激光束至朝着衬底被按压的膜的一部分上，该膜的一部分设置在该衬底上；以及
第二按压单元，用以朝着该衬底按压被激光束照射的膜。
16.如权利要求15所述的膜接合装置，其中所述第二按压单元是向被激光束照射的膜部分吹送气体的单元.
17.如权利要求15所述的膜接合装置，其中所述第二按压单元是通过辊按压被激光束照射的膜部分的单元。
18.如权利要求15所述的膜接合装置，其中所述第二按压单元是通过玻璃板按压被激光束照射的膜部分的单元。
19.一种半导体器件制造方法，包括如下步骤：
在半导体衬底的一个主表面上形成多个半导体元件；
将表面保护胶带接合到所述半导体衬底的所述一个主表面上；
通过研磨所述半导体衬底的另一主表面来减小所述半导体衬底的厚度；
将芯片贴装膜接合到所述半导体衬底的所述另一主表面上；
从所述半导体衬底的所述一个主表面去除该表面保护胶带；
通过切割和分离所述半导体衬底来分割所述多个半导体元件，
其中所述将芯片贴装膜接合到所述半导体衬底另一主表面上的步骤包括如下步骤：将芯片贴装膜置于所述半导体衬底上，从与该芯片贴装膜面向该衬底的表面相对的表面一侧选择性地照射激光束到置于所述半导体衬底上的芯片贴装膜的一部分上来加热该芯片贴装膜，以将被加热部分接合到所述半导体衬底，该芯片贴装膜的一部分设置在该半导体衬底上。
20.如权利要求19所述的半导体器件制造方法，其中所述选择性地照射激光束到该芯片贴装膜来加热芯片贴装膜的步骤包括：
利用激光束照射该芯片贴装膜，同时至少在用激光束照射该芯片贴装膜的照射区域之前和之后，朝着所述半导体衬底按压该芯片贴装膜。
21.如权利要求19所述的半导体器件制造方法，其中所述选择性地照射激光束到该芯片贴装膜上来加热该芯片贴装膜的步骤包括：
在所述半导体衬底上扫描激光束的同时照射激光束到该芯片贴装膜上。
22.如权利要求19所述的半导体器件制造方法，其中所述选择性地照射激光束到该芯片贴装膜上来加热该芯片贴装膜的步骤包括：
利用辊朝着所述半导体衬底按压所述被加热部分，以将所述被加热部分接合到所述半导体衬底。
23.如权利要求19所述的半导体器件制造方法，其中所述选择性地照射激光束到该芯片贴装膜上来加热该芯片贴装膜的步骤包括：
利用玻璃板朝着所述半导体衬底按压所述被加热部分，以将所述被加热部分接合到所述半导体衬底。
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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010077597A2 (en) * 2008-12-08 2010-07-08 Fujifilm Dimatix, Inc. Wafer taping
DE102009017659A1 (de) * 2009-04-16 2010-10-28 Schott Ag Verfahren zur leitenden Verbindung eines Bauelementes auf einem transprenten Substrat
JP5457088B2 (ja) * 2009-06-25 2014-04-02 株式会社日立パワーソリューションズ ダイシングテープ用の真空貼付機
JP5497534B2 (ja) * 2010-05-21 2014-05-21 株式会社ディスコ テープ貼着装置
MY154643A (en) * 2010-08-20 2015-07-15 First Solar Inc Tape applicator
CN102319956B (zh) * 2011-08-16 2015-04-22 北京博晖创新光电技术股份有限公司 膜动聚合物微流控芯片的基板与隔膜焊接方法
FR3013739B1 (fr) * 2013-11-28 2016-01-01 Valeo Vision Procede et dispositif de revetement de piece automobile
CN104096978B (zh) * 2014-06-26 2015-11-25 长春光华微电子设备工程中心有限公司 不锈钢芯片激光切割加工与贴膜装置
EP3098060A1 (en) * 2015-05-29 2016-11-30 Henkel AG & Co. KGaA Process and device for producing a laminate
CN108778695A (zh) * 2016-01-27 2018-11-09 康宁股份有限公司 室温结合基材的方法和设备
US10438922B2 (en) * 2016-06-06 2019-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for mounting components in semiconductor fabrication process
JP6818040B2 (ja) 2016-10-26 2021-01-20 日東電工株式会社 フィルム積層体の製造方法
CN106935534B (zh) * 2017-04-28 2019-11-05 京东方科技集团股份有限公司 封装装置及显示面板封装方法
JP2019197784A (ja) * 2018-05-08 2019-11-14 株式会社ディスコ レーザー加工装置
JP2019197802A (ja) * 2018-05-09 2019-11-14 株式会社ディスコ Ｄａｆ
TWI826320B (zh) * 2023-05-16 2023-12-11 華洋精機股份有限公司 減少oled顯示面板拼接單元之拼接間距之方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769129A (en) * 1968-03-29 1973-10-30 Steel Corp Method of making an embossed composite sheet
US4872930A (en) * 1984-07-09 1989-10-10 Nippon Oil Co., Ltd. Method for manufacturing carpet tiles having excellent dimensional stability
US5316604A (en) * 1990-12-04 1994-05-31 Hexcel Corporation Process for the preparation of thermoplastic sandwich structures
US5746854A (en) * 1996-07-22 1998-05-05 Guardian Fiberglass, Inc. Method of making mineral fiber insulation batt impregnated with coextruded polymer layering system

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933042A (en) * 1986-09-26 1990-06-12 General Electric Company Method for packaging integrated circuit chips employing a polymer film overlay layer
US5291371A (en) * 1990-04-27 1994-03-01 International Business Machines Corporation Thermal joint
DE19504967C2 (de) * 1995-02-15 2002-01-24 Fraunhofer Ges Forschung Verfahren zur Verbindung eines flexiblen Substrats mit einem Chip
JP3549646B2 (ja) * 1995-09-30 2004-08-04 トッパン・フォームズ株式会社 感熱接着シート及び装置
JPH0995649A (ja) * 1995-09-30 1997-04-08 Toppan Moore Co Ltd 感熱接着シートおよび接着活性方法
KR970060401A (ko) * 1996-01-09 1997-08-12 김광호 반도체 웨이퍼 절단장치
US5847356A (en) * 1996-08-30 1998-12-08 Hewlett-Packard Company Laser welded inkjet printhead assembly utilizing a combination laser and fiber optic push connect system
DE19751487A1 (de) * 1997-11-20 1999-06-02 Pac Tech Gmbh Verfahren und Vorrichtung zur thermischen Verbindung von Anschlußflächen zweier Substrate
DK174275B1 (da) * 1998-01-29 2002-11-04 Thermoform As Fremgangsmåde til fremstilling af et plastvindue, samt et med fremgangsmåden fremstillet vindue
ES2200460T3 (es) * 1999-12-23 2004-03-01 Leister Process Technologies Procedimiento y dispositivo para el calentamiento de por lo menos dos elementos mediante rayos laser con elevada densidad de energia.
JP4660880B2 (ja) * 2000-04-25 2011-03-30 日立化成工業株式会社 接着剤組成物及びそれを用いた接着フィルム、接着方法
US6486433B2 (en) * 2001-01-11 2002-11-26 Branson Ultrasonics Corporation Transparent pressure bladder
JP2002226822A (ja) * 2001-01-30 2002-08-14 Three M Innovative Properties Co 光線活性化型接着フィルムを用いた基材接着方法
JP3892703B2 (ja) * 2001-10-19 2007-03-14 富士通株式会社 半導体基板用治具及びこれを用いた半導体装置の製造方法
JP2003181931A (ja) * 2001-12-21 2003-07-03 Yasuo Kurosaki 熱可塑性透明樹脂部材のレーザー接合方法
JP4358502B2 (ja) * 2002-03-12 2009-11-04 浜松ホトニクス株式会社 半導体基板の切断方法
JP2004050513A (ja) * 2002-07-17 2004-02-19 Fine Device:Kk 樹脂フィルム間の接合方法
JP2004153193A (ja) * 2002-11-01 2004-05-27 Disco Abrasive Syst Ltd 半導体ウエーハの処理方法
JP4054251B2 (ja) * 2002-11-29 2008-02-27 富士通株式会社 フィルム貼り付け装置及び方法、及び半導体装置の製造方法
KR100549796B1 (ko) * 2003-11-03 2006-02-08 주식회사 젯텍 레이저를 이용한 이방전도성필름 본딩 장치 및 방법
JP4462940B2 (ja) * 2004-01-27 2010-05-12 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2005123653A (ja) * 2005-01-20 2005-05-12 Tokyo Seimitsu Co Ltd テープ貼付・剥離装置及びテープ貼付システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769129A (en) * 1968-03-29 1973-10-30 Steel Corp Method of making an embossed composite sheet
US4872930A (en) * 1984-07-09 1989-10-10 Nippon Oil Co., Ltd. Method for manufacturing carpet tiles having excellent dimensional stability
US5316604A (en) * 1990-12-04 1994-05-31 Hexcel Corporation Process for the preparation of thermoplastic sandwich structures
US5746854A (en) * 1996-07-22 1998-05-05 Guardian Fiberglass, Inc. Method of making mineral fiber insulation batt impregnated with coextruded polymer layering system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平6-114943A 1994.04.26

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US20070196588A1 (en) 2007-08-23
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TW200733259A (en) 2007-09-01
JP2007221034A (ja) 2007-08-30
US8016973B2 (en) 2011-09-13
CN101026101A (zh) 2007-08-29
TWI307129B (en) 2009-03-01
JP4514722B2 (ja) 2010-07-28

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