CN101005082A - 一种薄膜晶体管沟道结构及其形成方法 - Google Patents
一种薄膜晶体管沟道结构及其形成方法 Download PDFInfo
- Publication number
- CN101005082A CN101005082A CN200610138044.6A CN200610138044A CN101005082A CN 101005082 A CN101005082 A CN 101005082A CN 200610138044 A CN200610138044 A CN 200610138044A CN 101005082 A CN101005082 A CN 101005082A
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- film transistor
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- 239000012212 insulator Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
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- 239000011733 molybdenum Substances 0.000 claims description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910000809 Alumel Inorganic materials 0.000 claims description 3
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- 229910001182 Mo alloy Inorganic materials 0.000 claims description 3
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- 229910052804 chromium Inorganic materials 0.000 claims description 3
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- 229910052802 copper Inorganic materials 0.000 claims description 3
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101380446A CN100461432C (zh) | 2006-11-03 | 2006-11-03 | 一种薄膜晶体管沟道结构 |
US11/935,073 US7829896B2 (en) | 2006-11-03 | 2007-11-05 | Thin film transistor, manufacturing method thereof, and TFT LCD using the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006101380446A CN100461432C (zh) | 2006-11-03 | 2006-11-03 | 一种薄膜晶体管沟道结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101005082A true CN101005082A (zh) | 2007-07-25 |
CN100461432C CN100461432C (zh) | 2009-02-11 |
Family
ID=38704095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101380446A Active CN100461432C (zh) | 2006-11-03 | 2006-11-03 | 一种薄膜晶体管沟道结构 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7829896B2 (zh) |
CN (1) | CN100461432C (zh) |
Cited By (9)
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CN102315227A (zh) * | 2010-06-30 | 2012-01-11 | 北京京东方光电科技有限公司 | Tft阵列基板及其制造方法与检测方法 |
CN102707526A (zh) * | 2012-06-13 | 2012-10-03 | 深圳市华星光电技术有限公司 | 一种液晶显示面板 |
CN103296022A (zh) * | 2012-12-21 | 2013-09-11 | 上海中航光电子有限公司 | 显示面板的开关电路及显示面板 |
CN104022157A (zh) * | 2014-05-26 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
CN105428370A (zh) * | 2015-11-10 | 2016-03-23 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
CN105633136A (zh) * | 2016-01-05 | 2016-06-01 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、其驱动方法、阵列基板及显示装置 |
CN108735156A (zh) * | 2012-08-02 | 2018-11-02 | 三星显示有限公司 | 有机发光二极管显示器 |
CN109870860A (zh) * | 2017-12-05 | 2019-06-11 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN111192528A (zh) * | 2018-11-15 | 2020-05-22 | 三星显示有限公司 | 显示装置 |
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US8388553B2 (en) | 2004-11-04 | 2013-03-05 | Smith & Nephew, Inc. | Cycle and load measurement device |
AU2006282828B2 (en) * | 2005-08-23 | 2013-01-31 | Smith & Nephew, Inc | Telemetric orthopaedic implant |
US7952099B2 (en) | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
CN100483232C (zh) | 2006-05-23 | 2009-04-29 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
KR100846974B1 (ko) | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
JP4740203B2 (ja) | 2006-08-04 | 2011-08-03 | 北京京東方光電科技有限公司 | 薄膜トランジスタlcd画素ユニットおよびその製造方法 |
JP4823989B2 (ja) | 2006-09-11 | 2011-11-24 | 北京京東方光電科技有限公司 | Tft―lcdアレイ基板及びその製造方法 |
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CN100442132C (zh) | 2006-11-17 | 2008-12-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
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CN100461433C (zh) | 2007-01-04 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
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US7952099B2 (en) | 2006-04-21 | 2011-05-31 | Beijing Boe Optoelectronics Technology Co., Ltd. | Thin film transistor liquid crystal display array substrate |
CN100483232C (zh) | 2006-05-23 | 2009-04-29 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
KR100846974B1 (ko) | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
JP4740203B2 (ja) | 2006-08-04 | 2011-08-03 | 北京京東方光電科技有限公司 | 薄膜トランジスタlcd画素ユニットおよびその製造方法 |
CN100499138C (zh) | 2006-10-27 | 2009-06-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
CN100463193C (zh) | 2006-11-03 | 2009-02-18 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
CN1959508A (zh) | 2006-11-10 | 2007-05-09 | 京东方科技集团股份有限公司 | 一种tft lcd阵列基板结构和制造方法 |
KR100917654B1 (ko) | 2006-11-10 | 2009-09-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | 박막트랜지스터 액정 디스플레이 화소 구조 및 그 제조방법 |
CN100442132C (zh) | 2006-11-17 | 2008-12-10 | 北京京东方光电科技有限公司 | 一种tft lcd阵列基板结构及其制造方法 |
US9052550B2 (en) | 2006-11-29 | 2015-06-09 | Beijing Boe Optoelectronics Technology Co., Ltd | Thin film transistor liquid crystal display |
CN100432770C (zh) | 2006-11-29 | 2008-11-12 | 北京京东方光电科技有限公司 | 一种液晶显示器装置 |
CN1996133A (zh) | 2006-12-13 | 2007-07-11 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器及其制造方法 |
CN100524781C (zh) | 2006-12-13 | 2009-08-05 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器像素结构及其制造方法 |
CN100461433C (zh) | 2007-01-04 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种tft阵列结构及其制造方法 |
CN100466182C (zh) | 2007-01-04 | 2009-03-04 | 北京京东方光电科技有限公司 | 金属导线、电极及薄膜晶体管阵列基板的制造方法 |
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2006
- 2006-11-03 CN CNB2006101380446A patent/CN100461432C/zh active Active
-
2007
- 2007-11-05 US US11/935,073 patent/US7829896B2/en active Active
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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CN102315227B (zh) * | 2010-06-30 | 2013-04-03 | 北京京东方光电科技有限公司 | Tft阵列基板及其制造方法与检测方法 |
CN102707526A (zh) * | 2012-06-13 | 2012-10-03 | 深圳市华星光电技术有限公司 | 一种液晶显示面板 |
WO2013185361A1 (zh) * | 2012-06-13 | 2013-12-19 | 深圳市华星光电技术有限公司 | 一种液晶显示面板 |
CN102707526B (zh) * | 2012-06-13 | 2015-09-02 | 深圳市华星光电技术有限公司 | 一种液晶显示面板 |
CN108735156B (zh) * | 2012-08-02 | 2021-07-23 | 三星显示有限公司 | 有机发光二极管显示器 |
CN108735156A (zh) * | 2012-08-02 | 2018-11-02 | 三星显示有限公司 | 有机发光二极管显示器 |
CN103296022A (zh) * | 2012-12-21 | 2013-09-11 | 上海中航光电子有限公司 | 显示面板的开关电路及显示面板 |
CN103296022B (zh) * | 2012-12-21 | 2016-04-20 | 上海中航光电子有限公司 | 显示面板的开关电路及显示面板 |
WO2015180376A1 (zh) * | 2014-05-26 | 2015-12-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
CN104022157A (zh) * | 2014-05-26 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
CN105428370A (zh) * | 2015-11-10 | 2016-03-23 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
WO2017080004A1 (zh) * | 2015-11-10 | 2017-05-18 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
CN105428370B (zh) * | 2015-11-10 | 2018-09-04 | 深圳市华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
CN105633136A (zh) * | 2016-01-05 | 2016-06-01 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、其驱动方法、阵列基板及显示装置 |
US10236393B2 (en) | 2016-01-05 | 2019-03-19 | Boe Technology Group Co., Ltd. | TFT, method for driving the same, array substrate and display device |
CN109870860A (zh) * | 2017-12-05 | 2019-06-11 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN109870860B (zh) * | 2017-12-05 | 2021-10-26 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN111192528A (zh) * | 2018-11-15 | 2020-05-22 | 三星显示有限公司 | 显示装置 |
US11818917B2 (en) | 2018-11-15 | 2023-11-14 | Samsung Display Co., Ltd. | Display device |
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US20080105874A1 (en) | 2008-05-08 |
CN100461432C (zh) | 2009-02-11 |
US7829896B2 (en) | 2010-11-09 |
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