CN100573883C - 一种薄膜晶体管及其制造方法 - Google Patents
一种薄膜晶体管及其制造方法 Download PDFInfo
- Publication number
- CN100573883C CN100573883C CNB200710042991XA CN200710042991A CN100573883C CN 100573883 C CN100573883 C CN 100573883C CN B200710042991X A CNB200710042991X A CN B200710042991XA CN 200710042991 A CN200710042991 A CN 200710042991A CN 100573883 C CN100573883 C CN 100573883C
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- Prior art keywords
- drain electrode
- scan line
- data wire
- film transistor
- thin
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 21
- 239000012212 insulator Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 6
- 238000000151 deposition Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000809 Alumel Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200710042991XA CN100573883C (zh) | 2007-06-28 | 2007-06-28 | 一种薄膜晶体管及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200710042991XA CN100573883C (zh) | 2007-06-28 | 2007-06-28 | 一种薄膜晶体管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101335272A CN101335272A (zh) | 2008-12-31 |
CN100573883C true CN100573883C (zh) | 2009-12-23 |
Family
ID=40197716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200710042991XA Active CN100573883C (zh) | 2007-06-28 | 2007-06-28 | 一种薄膜晶体管及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN100573883C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102759832B (zh) * | 2012-07-27 | 2015-04-08 | 南京中电熊猫液晶显示科技有限公司 | 一种液晶显示基板及其制造方法 |
CN104062822B (zh) * | 2014-06-05 | 2017-02-01 | 深圳市华星光电技术有限公司 | 一种基于hsd结构的tft‑lcd显示面板的制作方法 |
CN110620105B (zh) * | 2019-10-22 | 2021-06-29 | 成都中电熊猫显示科技有限公司 | 阵列基板及其制造方法、阵列基板的图案偏移的检测方法 |
CN111583849A (zh) * | 2020-05-19 | 2020-08-25 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及显示装置 |
-
2007
- 2007-06-28 CN CNB200710042991XA patent/CN100573883C/zh active Active
Also Published As
Publication number | Publication date |
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CN101335272A (zh) | 2008-12-31 |
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ASS | Succession or assignment of patent right |
Owner name: SHANGHAI ZHONGHANG OPTOELECTRONICS CO., LTD. Free format text: FORMER OWNER: SHANGHAI SVA NEC LIQUID CRYSTAL DISPLAY CO., LTD. Effective date: 20100325 |
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Free format text: CORRECT: ADDRESS; FROM: 201108 NO.3388, HUANING ROAD, MINHANG DISTRICT, SHANGHAI CITY TO: 201108 NO.3388, HUANING ROAD, SHANGHAI CITY |
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TR01 | Transfer of patent right |
Effective date of registration: 20100325 Address after: 201108 Shanghai City Huaning Road No. 3388 Patentee after: Shanghai AVIC Optoelectronics Co.,Ltd. Address before: 201108 Shanghai city Minhang District Huaning Road No. 3388 Patentee before: SHANGHAI SVA NEC LIQUID CRYSTAL DISPLAY Co.,Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: WUHAN TIANMA MICROELECRONICS CO., LTD. Free format text: FORMER OWNER: SHANGHAI AVIC OPTOELECTRONICS CO., LTD. Effective date: 20100831 |
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Free format text: CORRECT: ADDRESS; FROM: 201108 NO.3388, HUANING ROAD, SHANGHAI TO: 430074 NO.8, LIUFANGYUAN ROAD, DONGYI INDUSTRIAL PARK, DONGHU NEW TECH. DEVELOPMENT DISTRICT, WUHAN CITY |
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Effective date of registration: 20100831 Address after: 430074 Wuhan Road East Industrial Park Liufang East Lake New Technology Development Zone No. 8 Patentee after: WUHAN TIANMA MICROELECTRONICS Co.,Ltd. Address before: 201108 Shanghai City Huaning Road No. 3388 Patentee before: Shanghai AVIC Optoelectronics Co.,Ltd. |