CN100511677C - 接触装置 - Google Patents
接触装置 Download PDFInfo
- Publication number
- CN100511677C CN100511677C CNB028109104A CN02810910A CN100511677C CN 100511677 C CN100511677 C CN 100511677C CN B028109104 A CNB028109104 A CN B028109104A CN 02810910 A CN02810910 A CN 02810910A CN 100511677 C CN100511677 C CN 100511677C
- Authority
- CN
- China
- Prior art keywords
- cover plate
- pcb
- circuit board
- printed circuit
- power semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000004020 conductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 6
- 206010039509 Scab Diseases 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Combinations Of Printed Boards (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
Description
Claims (4)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01113344.4 | 2001-06-01 | ||
EP01113344A EP1263046A1 (de) | 2001-06-01 | 2001-06-01 | Kontaktanordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1513207A CN1513207A (zh) | 2004-07-14 |
CN100511677C true CN100511677C (zh) | 2009-07-08 |
Family
ID=8177604
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028109104A Expired - Lifetime CN100511677C (zh) | 2001-06-01 | 2002-05-30 | 接触装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6856012B2 (zh) |
EP (2) | EP1263046A1 (zh) |
JP (1) | JP4266814B2 (zh) |
CN (1) | CN100511677C (zh) |
DE (1) | DE50214290D1 (zh) |
RU (1) | RU2302686C2 (zh) |
WO (1) | WO2002097885A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10316356B4 (de) * | 2003-04-10 | 2012-07-26 | Semikron Elektronik Gmbh & Co. Kg | Modular aufgebautes Leistungshalbleitermodul |
JP2004357384A (ja) * | 2003-05-28 | 2004-12-16 | Toyoda Mach Works Ltd | ヒートシンクへのスイッチング素子取付構造 |
EP2560204A3 (en) * | 2011-08-17 | 2016-06-08 | ABB Technology AG | Power semiconducter module and semiconducter module assembly with multiple power semiconducter modules |
KR101871026B1 (ko) * | 2011-10-21 | 2018-06-25 | 에이비비 슈바이쯔 아게 | 전력 반도체 모듈 및 다수의 전력 반도체 모듈들을 갖는 전력 반도체 모듈 어셈블리 |
RU180437U1 (ru) * | 2017-10-31 | 2018-06-14 | Акционерное Общество "Специальное Конструкторско-Технологическое Бюро По Релейной Технике" (Ао "Сктб Рт") | Силовой модуль |
RU2699759C1 (ru) * | 2018-10-10 | 2019-09-10 | Владимир Анатольевич Петров | Блок электрической аппаратуры |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3406528A1 (de) * | 1984-02-23 | 1985-08-29 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungshalbleitermodul |
US4748495A (en) * | 1985-08-08 | 1988-05-31 | Dypax Systems Corporation | High density multi-chip interconnection and cooling package |
US5579217A (en) * | 1991-07-10 | 1996-11-26 | Kenetech Windpower, Inc. | Laminated bus assembly and coupling apparatus for a high power electrical switching converter |
DE19530264A1 (de) | 1995-08-17 | 1997-02-20 | Abb Management Ag | Leistungshalbleitermodul |
JP3396566B2 (ja) * | 1995-10-25 | 2003-04-14 | 三菱電機株式会社 | 半導体装置 |
DE19603224A1 (de) * | 1996-01-30 | 1997-07-31 | Wolfgang Dipl Ing Schuster | Mechanische Anordnung parallelgeschalteter Halbleiterbauelemente |
JP3674333B2 (ja) * | 1998-09-11 | 2005-07-20 | 株式会社日立製作所 | パワー半導体モジュール並びにそれを用いた電動機駆動システム |
-
2001
- 2001-06-01 EP EP01113344A patent/EP1263046A1/de not_active Withdrawn
-
2002
- 2002-05-30 DE DE50214290T patent/DE50214290D1/de not_active Expired - Lifetime
- 2002-05-30 EP EP02727149A patent/EP1393375B1/de not_active Expired - Lifetime
- 2002-05-30 CN CNB028109104A patent/CN100511677C/zh not_active Expired - Lifetime
- 2002-05-30 US US10/479,216 patent/US6856012B2/en not_active Expired - Lifetime
- 2002-05-30 RU RU2003137843/28A patent/RU2302686C2/ru active
- 2002-05-30 JP JP2003500969A patent/JP4266814B2/ja not_active Expired - Lifetime
- 2002-05-30 WO PCT/CH2002/000284 patent/WO2002097885A1/de active Application Filing
Also Published As
Publication number | Publication date |
---|---|
EP1263046A1 (de) | 2002-12-04 |
EP1393375B1 (de) | 2010-03-17 |
RU2302686C2 (ru) | 2007-07-10 |
RU2003137843A (ru) | 2005-02-27 |
JP4266814B2 (ja) | 2009-05-20 |
US6856012B2 (en) | 2005-02-15 |
WO2002097885A1 (de) | 2002-12-05 |
DE50214290D1 (de) | 2010-04-29 |
US20040145050A1 (en) | 2004-07-29 |
EP1393375A1 (de) | 2004-03-03 |
CN1513207A (zh) | 2004-07-14 |
JP2004527919A (ja) | 2004-09-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210508 Address after: Baden, Switzerland Patentee after: ABB grid Switzerland AG Address before: Baden, Switzerland Patentee before: ABB Switzerland Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
|
CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20090708 |
|
CX01 | Expiry of patent term |