CN100495750C - Gallium nitride based LED epitaxial slice structure and method for preparing the same - Google Patents
Gallium nitride based LED epitaxial slice structure and method for preparing the same Download PDFInfo
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- CN100495750C CN100495750C CNB2007100099568A CN200710009956A CN100495750C CN 100495750 C CN100495750 C CN 100495750C CN B2007100099568 A CNB2007100099568 A CN B2007100099568A CN 200710009956 A CN200710009956 A CN 200710009956A CN 100495750 C CN100495750 C CN 100495750C
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- 229910002601 GaN Inorganic materials 0.000 title claims description 146
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 117
- 238000000034 method Methods 0.000 title claims description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 42
- 229910052749 magnesium Inorganic materials 0.000 claims description 42
- 239000000203 mixture Substances 0.000 claims description 38
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 21
- 238000000576 coating method Methods 0.000 claims description 21
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 8
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000000605 extraction Methods 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 6
- 150000004767 nitrides Chemical class 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
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CNB2007100099568A CN100495750C (en) | 2007-12-10 | 2007-12-10 | Gallium nitride based LED epitaxial slice structure and method for preparing the same |
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CNB2007100099568A CN100495750C (en) | 2007-12-10 | 2007-12-10 | Gallium nitride based LED epitaxial slice structure and method for preparing the same |
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CN101183697A CN101183697A (en) | 2008-05-21 |
CN100495750C true CN100495750C (en) | 2009-06-03 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8709846B2 (en) | 2010-01-25 | 2014-04-29 | Micron Technology, Inc. | Solid state lighting devices and associated methods of manufacturing |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101702422B (en) * | 2009-10-29 | 2012-07-04 | 上海蓝光科技有限公司 | Method for growing epitaxial layer of nitride film on figure substrate |
CN101937954B (en) * | 2010-07-05 | 2013-03-20 | 扬州中科半导体照明有限公司 | Epitaxial growth method for improving inner quantum efficiency of GaN-based LED |
CN102157645A (en) * | 2011-02-10 | 2011-08-17 | 武汉迪源光电科技有限公司 | Light emitting diode and preparation method thereof |
CN102270718B (en) * | 2011-07-25 | 2013-04-10 | 映瑞光电科技(上海)有限公司 | Nitride light emitting diode (LED) structure and preparation method thereof |
CN102709158A (en) * | 2012-06-19 | 2012-10-03 | 河北普兴电子科技股份有限公司 | Method of improving warpage of silicon epitaxial wafer |
CN102842660B (en) * | 2012-08-17 | 2015-11-11 | 圆融光电科技有限公司 | A kind of gallium nitride based LED epitaxial slice structure and preparation method thereof |
CN102842659B (en) * | 2012-08-17 | 2015-12-09 | 圆融光电科技有限公司 | A kind of manufacture method of gallium nitride based light emitting semiconductor device epitaxial wafer |
CN202917531U (en) * | 2012-09-29 | 2013-05-01 | 海迪科(苏州)光电科技有限公司 | High-efficiency high-voltage LED chip |
CN102969419A (en) * | 2012-12-24 | 2013-03-13 | 厦门大学 | GaN (gallium nitride) based LED (light-emitting diode) epitaxial wafer on weak polarity surface as well as preparation method thereof |
CN103928578A (en) * | 2014-04-22 | 2014-07-16 | 湘能华磊光电股份有限公司 | LED epitaxial layer, growth method thereof and LED chip |
CN104241464B (en) * | 2014-09-05 | 2017-12-22 | 西安神光皓瑞光电科技有限公司 | A kind of epitaxial growth method for improving p-type gallium nitride doping concentration |
CN108346752A (en) * | 2018-01-18 | 2018-07-31 | 南方科技大学 | A kind of preparation method and application of light emitting diode with quantum dots |
CN108461535B (en) * | 2018-04-13 | 2024-04-26 | 广东省半导体产业技术研究院 | Micro-nano transistor and micro-nano transistor manufacturing method |
CN116093216A (en) * | 2023-02-20 | 2023-05-09 | 江苏第三代半导体研究院有限公司 | Epitaxial structure, preparation method thereof and bicolor LED device |
Citations (1)
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CN1779997A (en) * | 2004-11-17 | 2006-05-31 | 方大集团股份有限公司 | Semiconductor light emitting diode structure |
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CN1779997A (en) * | 2004-11-17 | 2006-05-31 | 方大集团股份有限公司 | Semiconductor light emitting diode structure |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8709846B2 (en) | 2010-01-25 | 2014-04-29 | Micron Technology, Inc. | Solid state lighting devices and associated methods of manufacturing |
TWI463558B (en) * | 2010-01-25 | 2014-12-01 | Micron Technology Inc | Solid state lighting devices and associated methods of manufacturing |
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CN101183697A (en) | 2008-05-21 |
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Assignee: Dahom (Fujian) Illumination Technology Co.,Ltd. Assignor: Xiamen University Contract fulfillment period: 2009.10.21 to 2014.10.21 Contract record no.: 2009351000070 Denomination of invention: Gallium nitride based LED epitaxial slice structure and method for preparing the same Granted publication date: 20090603 License type: Exclusive license Record date: 20091029 |
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