CN100491587C - Physical vapour deposition equipment and technology - Google Patents
Physical vapour deposition equipment and technology Download PDFInfo
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- CN100491587C CN100491587C CNB2007100085565A CN200710008556A CN100491587C CN 100491587 C CN100491587 C CN 100491587C CN B2007100085565 A CNB2007100085565 A CN B2007100085565A CN 200710008556 A CN200710008556 A CN 200710008556A CN 100491587 C CN100491587 C CN 100491587C
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- chromium
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- aluminium
- vacuum cavity
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Abstract
The invention discloses a physical gas-phase sediment equipment and technique of composite nanometer hyperhard coating sedimented by magnetic control splashing method, which contains loop-shaped vacuum cavity, wherein the interior of vacuum cavity is divided into titanium target unit, chromium target unit, nitrogen ionized source, titanium target unit, aluminium target unit and argon ionized source. The making method comprises the following steps: a. cleaning knife; drying; loading on the rack; extracting into vacuum; preheating; opening argon to bombard and clean; b. opening chromium target power to sediment chromium; c. sedimenting chromium chloride layer; d. opening titanium target and aluminium target power; sedimenting aluminium titanium nitrate; forming composite film of chromium-chromium nitrate-aluminium titanium nitrate.
Description
Technical field
The present invention relates to adopt a kind of Pvd equipment and the technology of magnetron sputtering deposition nano composite super-hard coating.
Prior art
Adopt the commercialization of physical vapor deposition titanium nitride coating cutter.
The nanotechnology fundamental research is found: when a kind of crystalline material is embedded in the another kind of amorphous material, and stratified sedimentation is when metallic substrate surface; If layer thickness trend nanometer scale, interlayer has interface clearly again, just can form " nano effect ", and its film life-span will non-linearly increase substantially.
Industry has been released and has been adopted non-balance magnetically controlled sputter equipment at present for this reason, deposits chromium-chromium nitride-TiAlN coating on cutter.
Its structure sees that Fig. 1 illustrates, it is four planar targets of uniform distribution around the vacuum cavity of a cylinder shape; The interaction of branch magnetic field forms total " unbalanced magnetic field " between each target in order to make; Limited this vacuum cavity yardstick; VDP850/4 type as Britain Teer is
850mm.This just causes, and sputtering zone intersects between each target.When cutter is contained on the pedestal, rotation, revolution just can not be formed with the rete at " clear interface " during by each target.Therefore can't realize " nano effect ".
Summary of the invention
The object of the present invention is to provide is not increasing under the vacuum space prerequisite, obtains longer outer shroud girth, can form a kind of Pvd equipment and the technology of " clear interface " rete.
Equipment of the present invention comprises the cyclic vacuum cavity, it is characterized in that in the inside of cyclic vacuum cavity, evenly according to circle distribution titanium target assembly is arranged successively, chromium target assembly, oxide gas ionization source, titanium target assembly, aluminium target assembly, argon gas body ionization source.
Can utilize aforesaid device to carry out physical gas-phase deposition, the step of its technical process in the following order:
A. cutter is cleaned, drying is contained on the pedestal, is evacuated down to processing requirement, and preheating is opened the argon gas bombardment and cleaned;
B. open the chromium target power supply, deposition chromium layer;
C. sedimenting chromium chloride layer;
D. open titanium target and aluminium target power supply simultaneously, the deposit aluminum nitride titanium forms chromium-chromium nitride-TiAlN composite film at last.
The present invention is owing to be to utilize sectional area to be the cyclic vacuum cavity, so it can be under the prerequisite that does not increase vacuum space, obtain longer outer shroud girth, thereby cloth deposits each magnetron sputtering target at leisure, the sputtering zone that each target is formed has enough spatial separation, cutter is on pedestal like this, and rotation, revolution just can be formed with the rete at " clear interface " during by each target area.So the present invention can reach the purpose of drafting.
Description of drawings
The structural representation of the non-balance magnetically controlled sputter equipment that Fig. 1 is in the background technology to be mentioned.
Fig. 2 is the vacuum cavity structural representation of a kind of Pvd equipment of the present invention.
Fig. 3 is the twin target assembly in a kind of Pvd equipment of the present invention, one-sided to magnetic field (9-1) (9-2) with target (10-1) structural representation (10-2).
Fig. 4 is the structural representation of prior art Chinese patent " 200420062759.4, a kind of vacuum cavity ".
Embodiment:
Below in conjunction with accompanying drawing concrete structure principle of the present invention is described in detail.(but be not to the scope of the invention concrete restriction).
As shown in Figure 2, equipment of the present invention, comprise cyclic vacuum cavity (1), it is characterized in that in the inside of cyclic vacuum cavity (1) evenly according to circle distribution titanium target assembly (2), chromium target assembly (3), oxide gas ionization source (4), titanium target assembly (5), aluminium target assembly (6), argon gas body ionization source (7) being arranged successively; (8) but be the dress cutter rotation, the revolution support assembly.As shown in Figure 3, described each target assembly is cylindric, and is one-sided to magnetic field (9-1), (9-2), and same structure two targets constitute twin magnetic controlled sputtering; Target (10-1), (10-2) are rotatable, and twin target adopts the power supply of intermediate frequency square wave power.Cyclic vacuum cavity detailed structure see Chinese patent " 200420062759.4, a kind of vacuum cavity." as shown in Figure 4.
A kind of technology of utilizing the described equipment of claim 1 to carry out physical vapor deposition, the step that it is characterized in that its technical process is in the following order:
A, with cutter clean, drying, be contained on the pedestal (8), be evacuated down to processing requirement, preheating is opened the argon gas bombardment and is cleaned;
B, open the chromium target power supply, deposition chromium layer;
C. sedimenting chromium chloride layer;
D. open titanium target and aluminium target power supply simultaneously, the deposit aluminum nitride titanium forms chromium-chromium nitride-TiAlN composite film at last.
The present invention can be by aluminium, titanium, the nitrogen component ratio in the convenient control of the voltage TiAlN of controlling target voltage and argon gas, nitrogen ionization source.
Obviously except cutter, also can on other metal bases of computer embroidery pin, watchcase or the like, adopt equipment and technology deposition chromium-chromium nitride-TiAlN composite film of the present invention, obtain surperficial superhard effect.
As long as change target material, can certainly be used to deposit other composition retes.
Claims (2)
1, a kind of Pvd equipment, comprise cyclic vacuum cavity (1), it is characterized in that in the inside of described cyclic vacuum cavity (1) evenly according to circle distribution titanium target assembly (2), chromium target assembly (3), oxide gas ionization source (4), titanium target assembly (5), aluminium target assembly (6), argon gas body ionization source (7) being arranged successively.
2, a kind of technology of utilizing the described equipment of claim 1 to carry out physical vapor deposition, according to the step of following technical process: cutter is cleaned, and drying is contained on the pedestal (8), is evacuated down to processing requirement, and preheating is opened the argon gas bombardment and is cleaned; Open the chromium target power supply, deposition chromium layer; Sedimenting chromium chloride layer; Open titanium target and aluminium target power supply simultaneously, the deposit aluminum nitride titanium forms chromium-chromium nitride-TiAlN composite film at last, it is characterized in that by aluminium, titanium, nitrogen component ratio in the convenient control of the voltage TiAlN of controlling target voltage and argon gas, nitrogen ionization source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100085565A CN100491587C (en) | 2007-02-07 | 2007-02-07 | Physical vapour deposition equipment and technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100085565A CN100491587C (en) | 2007-02-07 | 2007-02-07 | Physical vapour deposition equipment and technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101012546A CN101012546A (en) | 2007-08-08 |
| CN100491587C true CN100491587C (en) | 2009-05-27 |
Family
ID=38700270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100085565A Expired - Fee Related CN100491587C (en) | 2007-02-07 | 2007-02-07 | Physical vapour deposition equipment and technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100491587C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051588B (en) * | 2009-10-27 | 2013-01-02 | 梁逸祥 | Germanium-containing vacuum plating method for noble metal assembly |
| CN102080207B (en) * | 2010-12-25 | 2012-07-25 | 深圳市广大纳米工程技术有限公司 | DLC (diamond-like carbon)/TiAlN (titanium aluminium nitride)/CrN (chromium nitride)/Cr (chromium) multilayer superhard film coating and preparation method thereof |
| CN102650032A (en) * | 2011-02-23 | 2012-08-29 | 鸿富锦精密工业（深圳）有限公司 | Covering member and preparation method thereof |
| CN115181945A (en) * | 2021-04-01 | 2022-10-14 | 复盛应用科技股份有限公司 | Method for coating film on golf club head |
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2007
- 2007-02-07 CN CNB2007100085565A patent/CN100491587C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101012546A (en) | 2007-08-08 |
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| PB01 | Publication | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090527 Termination date: 20120207 |