CN100490031C - Method for preparing single-layer capacitor element - Google Patents
Method for preparing single-layer capacitor element Download PDFInfo
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- CN100490031C CN100490031C CNB2004100753801A CN200410075380A CN100490031C CN 100490031 C CN100490031 C CN 100490031C CN B2004100753801 A CNB2004100753801 A CN B2004100753801A CN 200410075380 A CN200410075380 A CN 200410075380A CN 100490031 C CN100490031 C CN 100490031C
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Abstract
Metal atoms are adhered to surface of ceramic dielectric directly under high-energy electric field through vacuum sputtering mode in high energy so as to overcome unreliable issue in intermediate transition layer or perforation connection existed in mode of thick film printed circuit. Comparing with similar products, the product produced by the disclosed technique possesses features of low cascade equivalent resistance, good high frequency performance in microwave from several GHz to some dozens of GHz, high fabricating precision prepared by photo etching. The invention is suitable for high frequency, microwave, minitype cases such as microwave power amplifier, and modules including blue teeth technical module, hybrid integrated circuit, as well as modules in handset and wireless microwave communication module.
Description
Technical field
The present invention relates to a kind of manufacture method of capacitor element, particularly relate to a kind of manufacture method of single-layer capacitor element.The invention still further relates to a kind of single-layer capacitor element made from said method.
Background technology
In making the technology of single-layer capacitor element, known have following several mode:
Patent application GB2380062, the US2003016485 of U.S. AVX Corp., CN1396606A provide a kind of manufacture method of single-layer capacitor element, this method is earlier the ceramic dielectric substrate to be carried out metalized, and then carry out the part and grind, to remove substrate edge metal and chamfering.This method need not to carry out chemical etching technology and handles, but needs process each element separately, and converted products in batch, efficient is lower.
The patent US6661639 of U.S. Presidio company provides another to make the method for single-layer capacitor element, this method is used multilayer thick film circuit mode of printing, form the sandwich sandwich construction in inside, by perforation interior electrode layer is connected to the outside, metallization forms outer electrode again.Though having, this technology can form very thin dielectric layer at element internal, has the capacity advantage of higher, but this technology is used raw material porcelain film, adopt slurry printing, stacking, cutting, be total to technical processs such as burning, make internal electrode have the hidden danger of quality that is connected not enough reliability easily with the junction of outer electrode.
The United States Patent (USP) of Larry A.Liebowitz (20030169555) has been introduced another manufacture method, and laminating layer ceramic dielectric green compact film stamps electrocondution slurry then in the above on a thicker electrically-conductive backing plate.This electrocondution slurry can be a ceramic dielectric and the mixing of metal dust, and also can be single metal dust, burns altogether together then.The advantage of this technology be can be on the higher conducting base of intensity laminating layer can be as thin as media coating below 60 microns, thereby obtain higher capacitance.This technology is the thick-film printed circuit technology basically, is with raw material printing, stacking, cutting equally, and therefore the technology of burning also can exist the reliable inadequately hidden danger of quality of interelectrode connection altogether.
What the capacitor that the U.S. Pat 6088215 of Motorola Inc. is stated was used also is the multilayer thick film circuit technology, structure is complicated more, technology is complicated, is characterized in that top electrode draws from the centre, but lead-in wire perforation connects technology and becomes key and difficult point in the making in the middle of it.
The United States Patent (USP) 20030072125 of U.S. AVX Corp. also is to be connected with perforation with the multilayer thick film printing technology, and electrode is guided to the surface in medium, have the shortcoming of above similar technology equally.
Summary of the invention
First purpose of the present invention is to provide a kind of manufacture method of simple, reliable, accurate single-layer capacitor element.
Another object of the present invention is to provide the produced resonance frequency of a kind of said method very high single-layer capacitor element, and its dielectric material is a ceramic dielectric, comprises I, II, III class ceramic dielectric.
First purpose of the present invention is achieved by the following technical programs:
The manufacture method of a kind of single-layer capacitor element of the present invention, it may further comprise the steps:
(1) will prepare to carry out ultrasonic waves for cleaning in metallized ceramic dielectric substrate any solvent in alcohol or acetone or cyclohexanone or Tianna solution, dry then;
(2) above-mentioned substrate is all carried out the splash-proofing sputtering metal processing with sputtering technology in two surfaces up and down under vacuum or Buchholz protection;
(3) substrate after the metallization carries out photoetching treatment, is template with the negative film that obtains after the plate-making, is manufactured with the meticulous pattern in protectiveness zone on the substrate after the metallization by photoetching technique;
(4) substrate that will have above-mentioned pattern carries out routine plating, the processing of burn into developing technique, makes the upper and lower surface of substrate form many identical or symmetrical metallized patterns;
(5) substrate after the above-mentioned processing is sticked on the substrate with conventional method with thermoplastic adhesives, cut according to required size with the precision gas cutting machine bed then;
(6) substrate after will cutting dissolves and washes away with any solvent or hot water in alcohol or acetone or cyclohexanone or the Tianna solution, and the substrate that sticks on the substrate is separated with substrate, and isolated substrate is the single-layer capacitor element with upper and lower metal electrode;
(7) said elements is cleaned, and 100～150 ℃ the oven dry 15～60 minutes, at room temperature place 24 hours after, can carry out the test of electrical property.
Wherein the described metalized of step (2) is that described ceramic dielectric substrate is placed the enterprising row metal sputter of vacuum sputtering machine, so that the substrate surface metallization.
Above-mentioned metalized, its metallization material that adopts is single metal or alloy; In addition, described metalized is a sputter layer of metal material at least on described substrate.
Described metal material comprises at least a alloy at least a or combination in any between them in titanium, tungsten, platinum, cobalt, copper, nickel, palladium, gold, the tin.
Wherein the photoetching treatment described in the step (3) is to handle with exposure, developing process that similar photo is handled.
The electroplating technology described in the step (4) wherein, the plating material that is adopted is any one in gold, nickel, copper, tin, the ashbury metal.
Wherein the substrate described in step (5) and the step (6) is the metal substrate of steel or aluminium.
Another object of the present invention is achieved by the following technical programs:
Of the present invention a kind of with the produced single-layer capacitor element of said method, it comprises the upper electrode layer and the lower electrode layer on two surfaces that the single-layer ceramic dielectric layer is relative with laying respectively at ceramic dielectric layer, it is characterized in that: described upper and lower electrode layer by sputtering technology attached on the ceramic dielectric laminar surface.
Described upper and lower electrode layer is made of one deck metal or alloy material at least.
Described metal material comprises at least a alloy at least a or combination in any between them in titanium, tungsten, platinum, cobalt, copper, nickel, palladium, gold, the tin.To the selection of metal material mainly is whether the electrical property that depends on metal material, mechanical performance etc. meet the requirement of single-layer capacitor element to metal material.
The outermost metal material of described upper and lower electrode layer is a gold, nickel, copper, tin or its alloy.
Has identical or symmetrical metallized pattern between the described upper and lower electrode layer.
Described upper and lower electrode layer has at least one deck ceramic dielectric layer end face that it is accompanying to cover fully.
One of them electrode layer in described upper and lower electrode layer ceramic dielectric laminar surface that it is accompanying covers fully, and another electrode layer is divided at least two electrodes, has Liu Bian between electrode that this is told and the ceramic dielectric laminar surface or does not have the limit of staying.
Single-layer capacitor element of the present invention can be used soldering, wave-soldering, and spun gold spot welding, conducting resinl is pasted, and methods such as eutectic soldering paste are directly installed on the microstrip circuit.
The present invention is after forming the ceramic dielectric substrate, the technology that dielectric substrate is processed again, it has the following advantages: (1) the present invention directly is attached to the ceramic dielectric surface in vacuum high energy sputter mode with metallic atom under the high energy electric field, overcome the existing intermediate layer of thick-film printed circuit mode or bored a hole and connected problems such as unreliable, therefore its product series equivalent resistance is low, and the performance under microwave high-frequency is good.Frequency from several GHz to tens GHz all has outstanding performance performance.(2) owing to adopted advanced photoetching technique, therefore made components accuracy height.(3) compare with multilayer ceramic capacitor, single-layer capacitor has been avoided the current circuit that forms between dielectric layer, has lower series equivalent resistance value and higher quality factor when microwave uses.
The capacitor element of the present invention's making is highly suitable for high frequency, microwave, small-sized, microminiaturized occasion, for example, microwave power amplifier, module { Bluetooth technology module, hybrid integrated circuit module, integrated circuit added component (being packaged in the encapsulation of integrated circuit), mobile phone circuit module, radio microwave communication module etc. } are military, civilian high reliability products.
Description of drawings
Fig. 1 is the structural representation of the single-layer capacitor of one of embodiment of the invention;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the structural representation of two single-layer capacitor of the embodiment of the invention;
Fig. 4 is the vertical view of Fig. 3;
Fig. 5 is the structural representation of three single-layer capacitor of the embodiment of the invention;
Fig. 6 is the vertical view of Fig. 5;
Fig. 7 is the structural representation of four single-layer capacitor of the embodiment of the invention;
Fig. 8 is the vertical view of Fig. 7;
Fig. 9 is the electrode of five making of the embodiment of the invention, and bottom electrode is that all-metal is topped, and top electrode does not stay the schematic diagram of two capacitor elements on limit;
Figure 10 is the vertical view of Fig. 9;
Figure 11 is the electrode of six making of the embodiment of the invention, and bottom electrode is that all-metal is topped, the schematic diagram of the serial capacitor element that very do not stay the limit of powering on;
Figure 12 is the vertical view of Figure 11;
Figure 13 is the schematic diagram of the ratio series capacitor element made of the present invention;
Embodiment
The present invention is further illustrated below in conjunction with the drawings and specific embodiments.
Embodiment one
Structure is one of embodiment of single-layer capacitor element of the present invention as shown in Figure 1, 2, it comprises the upper electrode layer 2 and the lower electrode layer 3 on two surfaces that the thick single-layer ceramic dielectric layer 1 of 0.2mm is relative with laying respectively at ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is by vacuum high energy sputtering technology securely on the surface attached to described ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is made of the three-layer metal material, wherein the ground floor metal material is a titanium, and this metal level has the effect that strengthens metal and medium adhesion; The second layer metal material is a nickel; The 3rd layer is that the outermost metal material is a gold; Has identical or symmetrical metallized pattern between the described upper and lower electrode layer; Respectively that it is the accompanying ceramic dielectric laminar surface of described upper and lower electrode layer covers fully.
The manufacture method of present embodiment single-layer capacitor element is: with the barium titanate of one 25 millimeters * 25 millimeters * 0.20 millimeter (long * wide * thick) is that basic ceramic dielectric substrate carries out ultrasonic waves for cleaning, drying in alcohol, enters then and carries out sputter on the vacuum sputtering machine.The ground floor metal material of sputter is a titanium, and this metal level has the effect that strengthens metal and medium adhesion.On this basis, sputter one deck nickel forms second metal level again, after this sputter three-layer metal material gold again; Handle by series of process such as coated photoresists, exposure, flushing, dryings then, and metallized substrate is carried out photoetching, promptly handle with exposure, development, the fixing of similar film.Then electroplate, corrosion removes adhesive process, gets final product to such an extent that one forms many repetitions or symmetrical metallization pattern after these technologies are finished on this substrate.Then, this substrate is sticked on the aluminum base plate with thermoplastic adhesives, re-use precise numerical control machine, substrate is cut into the required size element according to graphics request with Carborundum wheel.The element that each is discrete dissolves and washes away with alcohol, and the substrate that sticks on the substrate is separated with substrate, the element that unloads is cleaned again, and 100 ℃ of oven dry 60 minutes, places and carry out electric performance test after 24 hours.The single-layer capacitor element loss factor that this example makes is less than 2.5%, and greater than 1011 ohm, capacitance is different because of component size under 100V for insulation resistance, in the 10-4000pf scope.
Embodiment two
Shown in Fig. 3,4 structure be single-layer capacitor element of the present invention embodiment two, it comprises the upper electrode layer 2 and the lower electrode layer 3 on two surfaces that the thick single-layer ceramic dielectric layer 1 of 0.125mm is relative with laying respectively at ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is by sputtering technology securely on the surface attached to described ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is made of the double layer of metal material, wherein the ground floor metal material is a titanium-tungsten, and this metal level has the effect that strengthens metal and medium adhesion; The second layer is that the outermost metal material is a gold-tin alloy; Has identical or symmetrical metallized pattern between the described upper and lower electrode layer; Have the limit of staying between the surface of described upper electrode layer and its accompanying ceramic dielectric layer, the lower electrode layer ceramic dielectric laminar surface that it is accompanying covers fully.
The manufacture method of present embodiment single-layer capacitor element is: with the magnesium titanate of one 38 millimeters * 38 millimeters * 0.125 millimeter (long * wide * thick) is that basic ceramic dielectric substrate carries out ultrasonic waves for cleaning, drying in acetone solvent, enters then and carries out sputter on the vacuum sputtering machine.The ground floor metal material of sputter is a titanium-tungsten, and this metal level has the effect that strengthens metal and medium adhesion.On this basis, sputter one deck gold-tin alloy again, form second metal level, handle by series of process such as coated photoresists, exposure, flushing, dryings then, and metallized substrate carried out photoetching, electroplate corrosion then, remove adhesive process, get final product to such an extent that one forms many repetitions or symmetrical metallization pattern after these technologies are finished on this substrate.Then, this substrate is sticked on the aluminum base plate, re-use precise numerical control machine, substrate is cut into the required size element according to graphics request with Carborundum wheel.The element that each is discrete dissolves and washes away with acetone solvent, and the substrate that sticks on the substrate is separated with substrate, the element that unloads is cleaned again, and oven dry is 15 minutes in 150 ℃, carries out electric performance test after 24 hours.The single-layer capacitor element that this example makes is of a size of 0.64 millimeter * 0.64 millimeter * 0.125 millimeter, and loss factor is less than 5 * 10-4, and greater than 1012 ohm, capacitance is different because of the electrode effective dimensions, in the 0.4-0.9pf scope under 100V for insulation resistance.
Embodiment three
Structure is three of embodiments of the invention shown in Fig. 5,6, it comprises the upper electrode layer 2 and the lower electrode layer 3 on two surfaces that the thick single-layer ceramic dielectric layer 1 of 0.17mm is relative with laying respectively at ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is by sputtering technology securely on the surface attached to described ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is made of the layer of metal material, and this metal material is a gold; Has identical or symmetrical metallized pattern between the described upper and lower electrode layer; Described upper and lower electrode layer respectively and have the limit of staying 11 between the surface of its ceramic dielectric layer that adheres to, and on stay the limit with under stay the limit symmetry, this design is convenient for assembly, does not have the branch of top and bottom.
The difference of the manufacture method of the manufacture method of present embodiment single-layer capacitor element and embodiment one is: its substrate of selecting for use is the boundary ceramics dielectric substrate of one 38 millimeters * 38 millimeters * 0.17 millimeter (long * wide * thick), substrate is carried out ultrasonic waves for cleaning and the solvent that substrate dissolves and washes away is all selected for use hexamethylene acetone, and the element that makes was 120 ℃ of oven dry 50 minutes.Make capacitor element and be of a size of 0.64 millimeter * 0.64 millimeter * 0.17 millimeter, loss factor is less than 1%, dielectric constant is greater than 25000, temperature coefficient is less than ± 15%, (55 ℃-125 ℃), greater than 1010 ohm, capacitance is different because of the electrode effective dimensions, in the 270-680pf scope under 50V for insulation resistance.
Embodiment four
Shown in Fig. 7,8 structure be single-layer capacitor element of the present invention embodiment four, it comprises the upper electrode layer 2 and the lower electrode layer 3 on two surfaces that the thick aluminium oxide single-layer ceramic dielectric layer 1 of 0.125mm is relative with laying respectively at ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is by sputtering technology securely on the surface attached to described ceramic dielectric layer 1, described upper and lower electrode layer 2,3 is made of the three-layer metal material, wherein the ground floor metal material is a platinum, and this metal level has the effect that strengthens metal and medium adhesion; The second layer metal material is a gold, and the three-layer metal material is that outermost layer is a gold-tin alloy, and gold-tin alloy is applicable to the welding manner that the eutectic point soldering paste is used; Has identical or symmetrical metallized pattern between the described upper and lower electrode layer; The described lower electrode layer ceramic dielectric laminar surface that it is accompanying covers fully, and upper electrode layer is divided into two electrodes, and these two electrodes telling have the limit of staying 11 respectively and between its ceramic dielectric laminar surface that adheres to.
The difference of the manufacture method of the manufacture method of present embodiment single-layer capacitor element and embodiment one is: its substrate of selecting for use is the alumina substrate of one 38 millimeters * 3 millimeters 8 * 0.125 millimeters (long * wide * thick), substrate is carried out ultrasonic waves for cleaning and the solvent that substrate dissolves and washes away is all selected for use Tianna solution, and the element that makes was 130 ℃ of oven dry 30 minutes.Make capacitor element and be of a size of 0.6 millimeter 4 * 0.64 millimeters * 0.125 millimeter, loss factor is less than 0.1%, and greater than 1012 ohm, capacitance is different because of the electrode effective dimensions, in the 0.1-0.3pf scope under 100V for insulation resistance.
Embodiment five
Fig. 9, Figure 10 are the another kind of electrode structure of embodiment one, and bottom electrode is full electrode, the element of the electrode that does not stay the limit that two sizes of powering on very are identical.
The difference of the manufacture method of the manufacture method of present embodiment single-layer capacitor element and embodiment one is: the solvent that substrate is dissolved and washed away is a hot water, and the element that makes was 110 ℃ of oven dry 40 minutes.
Embodiment six
Figure 11, Figure 12 are the another kind of electrode structure of embodiment one, and bottom electrode is full electrode, the element of the electrode that does not stay the limit that three sizes of powering on very are identical.
The difference of the manufacture method of the manufacture method of present embodiment single-layer capacitor element and embodiment one is: the element that makes was 140 ℃ of oven dry 20 minutes.
Embodiment seven
As shown in figure 13 structure be single-layer capacitor element of the present invention embodiment five, it comprises the upper electrode layer 2 and the lower electrode layer on two surfaces that the thick barium titanate single-layer ceramic dielectric layer 1 of 0.2mm is relative with laying respectively at ceramic dielectric layer 1, described upper and lower electrode layer is by sputtering technology securely on the surface attached to described ceramic dielectric layer 1, described upper and lower electrode layer is made of the double layer of metal material, wherein the ground floor metal material is a titanium, and this metal level has the effect that strengthens metal and medium adhesion; The second layer is that the outermost metal material is a gold; Has identical or symmetrical metallized pattern between the described upper and lower electrode layer; The described lower electrode layer ceramic dielectric laminar surface that it is accompanying covers fully, and upper electrode layer is divided into six electrodes by the capacity of 1:1:2:4:8:16, has the limit of staying 11 between six electrodes that this is told and its ceramic dielectric laminar surface that adheres to.
The manufacture method of present embodiment single-layer ceramic electricity capacitor element is identical with embodiment's one.
Claims (7)
1, a kind of manufacture method of single-layer capacitor element, it may further comprise the steps:
(1) will prepare to carry out ultrasonic waves for cleaning in metallized ceramic dielectric substrate any solvent in alcohol or acetone or cyclohexanone or Tianna solution, dry then;
(2) above-mentioned substrate is all carried out the splash-proofing sputtering metal processing with sputtering technology in two surfaces up and down under vacuum or Buchholz protection;
(3) substrate after the metallization carries out photoetching treatment, is template with the negative film that obtains after the plate-making, is manufactured with the meticulous pattern in protectiveness zone on the substrate after the metallization by photoetching technique;
(4) substrate that will have above-mentioned pattern carries out routine plating, the processing of burn into developing technique, makes the upper and lower surface of substrate form many identical or symmetrical metallized patterns;
(5) substrate after the above-mentioned processing is sticked on the substrate with the method for thermoplastic adhesives by routine, cut according to required size with the precision gas cutting machine bed then;
(6) substrate after will cutting dissolves and washes away with any solvent or hot water in alcohol or acetone or cyclohexanone or the Tianna solution, and the substrate that sticks on the substrate is separated with substrate, and isolated substrate is the single-layer capacitor element with upper and lower metal electrode;
(7) said elements is cleaned, and 100～150 ℃ the oven dry 15～60 minutes, at room temperature place 24 hours after, can carry out the test of electrical property.
2, the manufacture method of single-layer capacitor element according to claim 1 is characterized in that, wherein the described metalized of step (2) is that described substrate is placed the sputter of the enterprising row metal material of vacuum sputtering machine, so that the substrate metallization.
3, the manufacture method of single-layer capacitor element according to claim 1 and 2 is characterized in that, described metalized is a sputter layer of metal material at least on described substrate.
4, the manufacture method of single-layer capacitor element according to claim 3 is characterized in that, described metal material comprises at least a alloy at least a or combination in any between them in titanium, tungsten, platinum, cobalt, copper, nickel, palladium, gold, the tin.
5, the manufacture method of single-layer capacitor element according to claim 1 is characterized in that, wherein the photoetching treatment described in the step (3) is the exposure of handling with photo, and developing process is handled.
6, the manufacture method of single-layer capacitor element according to claim 1 is characterized in that, the electroplating technology described in the step (4) wherein, the plating material that it adopts are gold, nickel, copper, any one in tin, the ashbury metal.
7, the manufacture method of single-layer capacitor element according to claim 1 is characterized in that, wherein the substrate described in step (5) and the step (6) is the metal substrate of steel or aluminium.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100753801A CN100490031C (en) | 2004-08-31 | 2004-08-31 | Method for preparing single-layer capacitor element |
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| CNB2004100753801A CN100490031C (en) | 2004-08-31 | 2004-08-31 | Method for preparing single-layer capacitor element |
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| CN1601673A CN1601673A (en) | 2005-03-30 |
| CN100490031C true CN100490031C (en) | 2009-05-20 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101256852B (en) * | 2008-03-20 | 2010-06-02 | 广州翔宇微电子有限公司 | Thin film short circuit tablet for microwave circuit and manufacturing method thereof |
| US9165716B2 (en) | 2011-06-24 | 2015-10-20 | Knowles Capital Formation, Inc. | High capacitance single layer capacitor |
| CN102480020A (en) * | 2011-09-20 | 2012-05-30 | 深圳光启高等理工研究院 | Metamaterial and preparation method thereof |
| CN106935397A (en) * | 2015-12-31 | 2017-07-07 | 昆山萬豐電子有限公司 | A kind of manufacture method of single-layer ceramic capacitor or individual layer piezoresistor |
| JP6989207B2 (en) * | 2018-05-15 | 2022-01-05 | 住友電工デバイス・イノベーション株式会社 | Capacitor manufacturing method |
| CN110277253A (en) * | 2019-06-20 | 2019-09-24 | 大连达利凯普科技有限公司 | The manufacturing process of ceramic novel capacitor |
| CN110400696A (en) * | 2019-07-29 | 2019-11-01 | 大连达利凯普科技有限公司 | A kind of manufacturing process of the single-layer capacitor with golden tin solder |
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