CN100470872C - Process for producing nano-scale cross lines array structure organic molecule device - Google Patents
Process for producing nano-scale cross lines array structure organic molecule device Download PDFInfo
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- CN100470872C CN100470872C CNB2006100120511A CN200610012051A CN100470872C CN 100470872 C CN100470872 C CN 100470872C CN B2006100120511 A CNB2006100120511 A CN B2006100120511A CN 200610012051 A CN200610012051 A CN 200610012051A CN 100470872 C CN100470872 C CN 100470872C
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Abstract
The invention belongs to the micro machining field in microelectronics and molectronics, especially relating to a method for preparing nano cross line array structure organic molecular device, comprising the steps of: 1. depositing insulating film on substrate surface; 2. spin-coating electron beam resist on the insulating film surface, making electron beam exposure and developing to obtain lower electrode figure; 3. evaporating to prepare lower electrode metal; 4. peeling off the metal to obtain cross line lower electrode; 5. cover-grow organic molecular film on the lower electrode; 6. evaporating to prepare metal protection layer on the organic molecular film; 7. spin-coating double layers of photoetching glue on the protection layer, and making electron beam exposure and developing to obtain upper electrode figure; 8. slantingly evaporating to prepare upper electrode metal film; 9. peeling off the metal to obtain cross line upper electrode; and 10. dry-etching the protection layer and completing preparing of the device.
Description
Technical field
The invention belongs to the micro processing field in microelectronics and the molecular electronics, relating to especially is a kind of preparation method of nano-scale cross lines array structure organic molecule device.
Background technology
Along with the characteristic size of large scale integrated circuit enters into nanoscale, traditional si-substrate integrated circuit technology faces the challenge, and the research of new material and new construction becomes focus, and the molecular electronic device of one of nano-electron branch is just flourish.FET and cross spider are the structures of at present main molecular electronic device, and the cross spider structure helps the integrated extensive concern that is subjected to.The making flow process of present cross spider structure is generally and at first prepares bottom electrode, the organic material of growing then, finish the preparation of top electrode at last, wherein in the preparation process of top electrode, can introduce pollution and this organic material is caused damage, its difficulty of processing is bigger, and is unfavorable for the raising of device performance.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of nano-scale cross lines array structure organic molecule device; it at first makes lower electrode arrangement, the organic material of growing then, regrowth protective layer; make upper electrode arrangement at last, thereby obtain the organic molecular device of nanometer cross lines array structure.
A kind of preparation method of nano-scale cross lines array structure organic molecule device, be by twice electron beam lithography, the evaporation of three minor metals, an organic film deposition growing, twice dry etching, acquisition cross spider organic molecular device, its step is as follows: 1, deposition insulating layer film on substrate surface; 2, spin coating electron sensitive resist on the insulating layer of thin-film surface, electron beam exposure, development obtain the bottom electrode figure; 3, evaporation preparation bottom electrode metal; 4, metal-stripping obtains the cross spider bottom electrode; 5, on bottom electrode, cover the growth organic molecular film; 6, evaporation preparation coat of metal on organic molecular film; 7, the different Double-layer photoetching glue of spin coating developing powder on coat of metal, electron beam exposure, development obtain the top electrode figure; 8, oblique evaporation prepares the top electrode metallic film; 9, metal-stripping obtains the cross spider top electrode; 10, dry etching protective layer is finished the preparation of cross spider organic molecular device.
The preparation method of described nano-scale cross lines array structure organic molecule device, wherein said top electrode figure is by the double-deck electron beam resist of spin coating on the basis before this, obtain through electron beam exposure, development, the current double-deck electron beam resist developing powder difference that adopts, mainly to be that the bottom is roomy, the development figure of narrow top in order obtaining, thereby to obtain the bigger oblique steaming degree of freedom.
The preparation method of described nano-scale cross lines array structure organic molecule device, wherein said top electrode metallic film is that the method (this technology hereinafter has detailed description) by the metal oblique evaporation obtains, its objective is the position, crosspoint is placed on the zone that influenced by electron beam exposure, avoid adopting organic molecular film to constitute device through electron beam exposure.
The preparation method of described nano-scale cross lines array structure organic molecule device, the etching of wherein said coat of metal adopt dry etching technology to finish.
The preparation method of described nano-scale cross lines array structure organic molecule device, the etching of wherein said organic thin film layer adopt dry etching technology to finish.
Wherein said nanoscale crossbar line structure is that the evaporation of an organic molecular film or liquid growth obtain cross spider array organic molecular device by twice electron beam lithography, three evaporations, twice dry etching.
Tiltedly steaming technology is by changing the pallet or the jig of sample on the basis of common evaporation technology, make the metal vapors of deposition and masking layer surface have angles that are not equal to 90 degree to get, major function be can be below unsettled glue masking layer the plated metal material.
Characteristics of the present invention are that at first the method by electron beam lithography and evaporation of metal and metal-stripping prepares bottom electrode; the organic material of growing then; the evaporated metal protective layer; method by electron beam lithography and metal oblique evaporation and metal-stripping prepares top electrode again; the damage of avoiding technologies such as electron beam exposure and metal-stripping that organic molecular film is caused has improved the reliability that organic material and microelectronic technique combine fabricate devices.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description, wherein:
Fig. 1-1 is to Fig. 1-the 14th, flow chart of the present invention;
Fig. 2-1 is to Fig. 2-the 14th, and the flow chart of the invention process example, Fig. 3-1 are the schematic diagram that tiltedly steams technology to 3-3.
Embodiment
Invention flow chart (section of choosing in the flow chart is A-A section among Fig. 1-14):
1, as Figure 1-1, the method by thermal oxide growth or chemical vapour deposition (CVD) prepares insulating layer of thin-film on substrate surface.
2, shown in Fig. 1-2, spin coating electron beam resist on the insulating layer of thin-film surface toasts in hot plate or baking oven.
3, as Figure 1-3, through electron beam exposure, the back of developing obtains the bottom electrode figure on photoresist.
4, shown in Fig. 1-4, the evaporation of metal method obtains the bottom electrode metallic film.
5, shown in Fig. 1-5, the metal bottom electrode is prepared in the ultrasonic back of peeling off such as acetone, ethanol and deionized water on insulating barrier.
6, shown in Fig. 1-6, adopt the method for vacuum evaporation or liquid phase LB film to prepare organic molecular film.Organic molecular film is the material with bistable switch characteristic.
7, shown in Fig. 1-7, by metal vaporizing technique growing metal protective layer on organic molecular film.
8, shown in Fig. 1-8, the two-layer electron beam resist of spin coating on the coat of metal film surface.
9, shown in Fig. 1-9, through electron beam exposure, the back of developing obtains the top electrode figure on photoresist.
10, shown in Fig. 1-10, oblique evaporation of metal obtains the top electrode metallic film.
11, shown in Fig. 1-11, electrode of metal is prepared in the ultrasonic back of peeling off such as acetone, ethanol and deionized water on coat of metal.
12, shown in Fig. 1-12, dry etching is removed unnecessary protective layer.
13, shown in Fig. 1-13, dry etching is removed unnecessary organic molecular film, finishes the preparation of the organic molecular device of nano-scale cross lines array structure.Vertical view is shown in 1-14.
Examples of implementation flow process (section of choosing in the flow chart is B-B section among Fig. 2-14):
1, shown in Fig. 2-1, the method by low-pressure chemical vapor deposition (LPCVD) on substrate surface prepares the insulating silicon nitride layer film.
2, shown in Fig. 2-2, the two-layer electron beam resist of spin coating PMMA and Copolymer on the silicon nitride film surface.Baking is 2 hours in baking oven.
3, shown in Fig. 2-3, through electron beam exposure, the back of developing obtains the bottom electrode figure on photoresist.
4, shown in Fig. 2-4, the normal method of evaporating of electron beam obtains bottom electrode Cr/Au double-layer metal film.
5, shown in Fig. 2-5, the metal bottom electrode is prepared in the ultrasonic back of peeling off such as acetone, ethanol and deionized water on silicon nitride.
6, shown in Fig. 2-6, adopt the method for liquid phase LB film to prepare Rotaxane bistable state organic molecular film.
7, shown in Fig. 2-7, by the technology of the normal evaporation of the electron beam Ti coat of metal of on organic molecular film, growing.
8, shown in Fig. 2-8, the two-layer electron beam resist of spin coating LOR and PMMA on the coat of metal film surface.Baking is 80 minutes in baking oven.
9, shown in Fig. 2-9, through electron beam exposure, the back of developing obtains the top electrode figure on photoresist.
10, shown in Fig. 2-10, electron beam tiltedly steams the method method and obtains Cr/Au double-layer top electrode metallic film.
11, shown in Fig. 2-11, electrode of metal is prepared in the ultrasonic back of peeling off such as acetone, ethanol and deionized water on coat of metal.
12, shown in Fig. 2-12, adopt fluorine base gas to go up etching and remove unnecessary Ti protective layer in High Density Plasma Etching System (ICP).
13, shown in Fig. 2-13, adopt inert gas to go up etching and remove unnecessary Rotaxane organic molecular film at reactive ion etching machine (RIE), finish the preparation of the organic molecular device of nano-scale cross lines array structure.Vertical view is shown in 2-14.
Tiltedly steam technology:
Fig. 3-1 is the schematic diagram of normal electron beam evaporation technical process;
Fig. 3-2 is the schematic diagram of electron beam oblique evaporation technical process;
Fig. 3-3 is the device structure comparison diagram of normal electron beam evaporation and oblique evaporation.
Claims (8)
1, a kind of preparation method of nano-scale cross lines array structure organic molecule device is by twice electron beam lithography, the evaporation of three minor metals, an organic film deposition growing, and twice dry etching obtains the cross spider organic molecular device; It is characterized in that step is as follows:
Step 1, on substrate surface the deposition insulating layer film;
Step 2, on the insulating layer of thin-film surface spin coating electron sensitive resist, electron beam exposure, developing obtains the bottom electrode figure;
Step 3, evaporation preparation bottom electrode metallic film;
Step 4, metal-stripping obtain the cross spider bottom electrode;
Step 5, on bottom electrode, cover the growth organic molecular film;
Step 6, on organic molecular film evaporation preparation coat of metal;
Step 7, on coat of metal the different double-deck electron beam resist of spin coating developing powder, electron beam exposure, developing obtains the top electrode figure;
Step 8, oblique evaporation prepare the top electrode metallic film;
Step 9, metal-stripping obtain the cross spider top electrode;
Step 10, dry etching protective layer and organic thin film layer are finished the preparation of cross spider organic molecular device.
2, the preparation method of nano-scale cross lines array structure organic molecule device according to claim 1 is characterized in that, the wherein said insulating layer of thin-film that deposits on substrate surface is to adopt the method for thermal oxidation or chemical vapour deposition (CVD) to obtain.
3, the preparation method of nano-scale cross lines array structure organic molecule device according to claim 1 is characterized in that, wherein said bottom electrode metallic film is to adopt the method for electron beam evaporation or thermal evaporation evaporation of metal to obtain.
4, the preparation method of nano-scale cross lines array structure organic molecule device according to claim 1, it is characterized in that, metal-stripping adopts acetone, ethanol, deionized water liquid ultrasonic method, its objective is to obtain meticulous upper and lower electrode nanometer crossed array figure.
5, the preparation method of nano-scale cross lines array structure organic molecule device according to claim 1, it is characterized in that, wherein said organic molecular film is that the method by vacuum evaporation or liquid phase LB film is grown on the substrate, and organic molecular film is the material with bistable switch characteristic.
6, the preparation method of nano-scale cross lines array structure organic molecule device according to claim 1; it is characterized in that; wherein said coat of metal adopts the method for electron beam evaporation or thermal evaporation evaporation of metal to obtain, and purpose is to stop that organic molecular film contacts with organic solvent.
7, the preparation method of nano-scale cross lines array structure organic molecule device according to claim 1, it is characterized in that, wherein said top electrode figure is by the double-deck electron beam resist of spin coating on the basis before this, obtain through electron beam exposure, development, the current double-deck electron beam resist developing powder difference that adopts, mainly to be that the bottom is roomy, the development figure of narrow top in order obtaining, thereby to obtain the bigger oblique steaming degree of freedom.
8, the preparation method of nano-scale cross lines array structure organic molecule device according to claim 1, it is characterized in that, wherein said top electrode metallic film is that the method by the metal oblique evaporation obtains, its objective is the position, crosspoint is placed on the zone that influenced by electron beam exposure, avoid adopting organic molecular film to constitute device through electron beam exposure.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101459223B (en) * | 2007-12-12 | 2010-06-09 | 中国科学院微电子研究所 | Method for producing crossed array structured organic molecular device |
| KR101045128B1 (en) * | 2008-08-04 | 2011-06-30 | 서울대학교산학협력단 | Manufacturing cross-structures of nanostructures |
| CN101800284B (en) * | 2009-02-11 | 2011-06-15 | 中国科学院微电子研究所 | Method for manufacturing double-layer top electrode organic field effect transistor |
| CN103903970A (en) * | 2014-03-10 | 2014-07-02 | 中国科学院物理研究所 | Method for preparing heterogeneous electrode pair with nanometer gap |
| CN107275455A (en) * | 2017-07-25 | 2017-10-20 | 南京迈智芯微光电科技有限公司 | A kind of electrode preparation method of the si-based light-emitting device based on stripping technology |
| CN112582276A (en) * | 2019-09-28 | 2021-03-30 | 台湾积体电路制造股份有限公司 | Semiconductor structure and manufacturing method thereof |
| CN112379574A (en) * | 2020-11-23 | 2021-02-19 | 福建中科光芯光电科技有限公司 | Low-cost manufacturing method of terahertz photoconductive antenna with nano electrode |
| CN114988353A (en) * | 2022-06-14 | 2022-09-02 | 中国科学院微电子研究所 | Method for preparing nano pattern |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1369921A (en) * | 2001-03-07 | 2002-09-18 | 中国科学院长春光学精密机械与物理研究所 | Process for improving filming performance of evaporated organic film |
| CN1387267A (en) * | 2001-05-17 | 2002-12-25 | 朗迅科技公司 | Organic semiconductor device having short channel |
| CN1471182A (en) * | 2003-06-17 | 2004-01-28 | 中国科学院长春应用化学研究所 | Organic semiconductor comprising two or more organic molecules and its processing method |
| US20050051768A1 (en) * | 2003-09-06 | 2005-03-10 | Kim Seong Jin | Method for manufacturing organic molecular device |
| CN1630950A (en) * | 2002-02-08 | 2005-06-22 | 松下电器产业株式会社 | Organic electronic device and its manufacturing method |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1369921A (en) * | 2001-03-07 | 2002-09-18 | 中国科学院长春光学精密机械与物理研究所 | Process for improving filming performance of evaporated organic film |
| CN1387267A (en) * | 2001-05-17 | 2002-12-25 | 朗迅科技公司 | Organic semiconductor device having short channel |
| CN1630950A (en) * | 2002-02-08 | 2005-06-22 | 松下电器产业株式会社 | Organic electronic device and its manufacturing method |
| CN1471182A (en) * | 2003-06-17 | 2004-01-28 | 中国科学院长春应用化学研究所 | Organic semiconductor comprising two or more organic molecules and its processing method |
| US20050051768A1 (en) * | 2003-09-06 | 2005-03-10 | Kim Seong Jin | Method for manufacturing organic molecular device |
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Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130407 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130407 |
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Effective date of registration: 20130407 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |