CN101800284B - Method for manufacturing double-layer top electrode organic field effect transistor - Google Patents
Method for manufacturing double-layer top electrode organic field effect transistor Download PDFInfo
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- CN101800284B CN101800284B CN2009100776736A CN200910077673A CN101800284B CN 101800284 B CN101800284 B CN 101800284B CN 2009100776736 A CN2009100776736 A CN 2009100776736A CN 200910077673 A CN200910077673 A CN 200910077673A CN 101800284 B CN101800284 B CN 101800284B
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Abstract
The invention discloses a method for manufacturing a double-layer top electrode organic field effect transistor, which comprises the following steps of: firstly, growing an insulating dielectric film on a conductive silicon substrate through thermal oxidation; secondly, forming a layer of organic semiconductor material on the surface of the insulating dielectric film through vacuum evaporation; thirdly, performing vapor deposition to form a layer of metal electrode through stencil electron beam evaporation; fourthly, forming a layer of organic semiconductor material through the vacuum evaporation again; and fifthly, performing the vapor deposition to form a second layer of metal electrode through the stencil electron beam evaporation to finish the manufacturing of the double-layer top electrode organic field effect transistor. The method for manufacturing the double-layer top electrode organic field effect transistor adopts a stencil vapor deposition process to guarantee the performance of a grown organic semiconductor film. Besides, the double-layer top electrode organic field effect transistor adopts a double-layer top electrode structure to effectively reduce the distance between an electrode and a channel, and simultaneously guarantee the thickness of an active layer. The organic semiconductor material is infiltrated between the two layers of the metal electrodes by means of metal particles to ensure that the two layers of the metal electrodes are connected with each other, so an additional interconnection process is not needed.
Description
Technical field
The present invention relates to the manufacture method in Micrometer-Nanometer Processing Technology field, particularly a kind of double-layer top electrode organic field effect transistor in organic semiconductor.
Background technology
Along with deepening continuously of information technology, electronic product has entered each link of people's life and work; People are increasing to the demand of low cost, flexibility, low weight, portable electronic product in daily life; Traditional device and circuit based on inorganic semiconductor material are difficult to satisfy these requirements, and the organic microelectric technique based on the organic polymer semi-conducting material that therefore can realize these characteristics has obtained people and more and more paid close attention under this trend.
The performance that improves organic field effect tube is the target that pursue in this field always.Except material and technology had a significant impact the performance of organic field effect tube, the influence of device architecture also can not be ignored.Organic field effect tube generally adopts top electrode or lower electrode arrangement.The transistor of upper electrode arrangement has preferable performance with respect to the organic field effect tube of lower electrode arrangement.But because the special mobility anisotropy of organic semiconducting materials makes the device of upper electrode arrangement will be subjected to the influence of material thickness.
The semiconductor layer material is thick more, and the distance of top electrode and gate medium is big more, and the additional resistance that is equivalent to the device increase is also just big more.This be because charge carrier perpendicular to the mobility of semi-conducting material thickness direction far below the direction that is parallel to media plane.In order to reduce this because of the problem that the mobility anisotropy causes, everybody mainly is by reducing the influence that material thickness reduces this annex thickness.But the too thin unsteadiness that increases device again of material.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of manufacture method of double-layer top electrode organic field effect transistor.
(2) technical scheme
For achieving the above object, the invention provides a kind of manufacture method of double-layer top electrode organic field effect transistor, this method comprises:
Step 1, the dielectric film of in the conductive silicon substrate, growing;
Step 2, on the dielectric film surface vacuum evaporation one deck organic semiconducting materials;
Step 3, by leaking a version evaporation layer of metal electrode;
Step 4, vacuum evaporation one deck organic semiconducting materials again;
Step 5, by leaking a version deposited by electron beam evaporation evaporation second layer metal electrode, finish the making of device.
In the such scheme, the substrate of conductive silicon described in the step 1 is as the grid of organic field effect tube.
In the such scheme, described in the step 1 in the conductive silicon substrate thermal oxide growth dielectric film, be to adopt the method for thermal oxide growth or the method for chemical vapour deposition (CVD) to obtain.
In the such scheme, organic semiconducting materials described in the step 2 is the obtaining of method of adopting vacuum evaporation.
In the such scheme, electrode metal described in the step 3 obtains by electron beam evaporation or PECVD.
In the such scheme, organic semiconducting materials described in the step 4 is to adopt peptide cyanines copper.
In the such scheme, what metal electrode described in step 3 and the step 5 adopted is gold.
(3) beneficial effect
The manufacture method of double-layer top electrode organic field effect transistor provided by the invention adopts and leaks the version evaporation process, has guaranteed the performance of the organic semiconductor thin-film of growth.And new structure adopts the double-layer top electrode structure, has effectively reduced the distance between electrode and the raceway groove, has guaranteed the thickness of active layer simultaneously again.Rely on metallic to penetrate into organic semiconducting materials between the double layer of metal electrode and interconnect, thereby do not need extra interconnection process.
Description of drawings
Fig. 1 is the method flow diagram of making double-layer top electrode organic field effect transistor provided by the invention;
Fig. 2-1 is to Fig. 2-the 5th, and the present invention makes the process chart of double-layer top electrode organic field effect transistor;
Fig. 3-1 makes the process chart of double-layer top electrode organic field effect transistor to Fig. 3-the 5th according to the embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
The invention provides a kind of double-layer top electrode structure that designs for the influence that reduces this annex resistance in the upper electrode arrangement organic field effect tube.New structure is to form double-deck top electrode by insert the layer of metal layer in common upper electrode arrangement, thereby reduces the distance of electrode to gate medium.New method has effectively reduced the size of the additional resistance below the top electrode, thereby has improved the performance of device.This two-layer electrode mainly relies on metallic to penetrate into loose organic semiconductor layer and realizes each other interconnection, and therefore, this method does not need extra interconnection process yet.It is simple that new construction implements technology.
As shown in Figure 1, Fig. 1 is the method flow diagram of making double-layer top electrode organic field effect transistor provided by the invention, and this method comprises:
Step 1, in the conductive silicon substrate thermal oxide growth dielectric film;
Step 2, on the dielectric film surface vacuum evaporation one deck organic semiconducting materials;
Step 3, by leaking a version deposited by electron beam evaporation evaporation layer of metal electrode;
Step 4, vacuum evaporation one deck organic semiconducting materials again;
Step 5, by leaking a version deposited by electron beam evaporation evaporation second layer metal electrode, finish the making of device.
Fig. 2-1 shows the process chart that the present invention makes double-layer top electrode organic field effect transistor to Fig. 2-5, specifically comprises:
Shown in Fig. 2-1, adopt the technology of thermal oxide growth or the method for chemical vapour deposition (CVD) to prepare the dielectric substance layer film on the conductive substrates surface.
Shown in Fig. 2-2, use method evaporation one deck organic semiconducting materials on gate medium of vacuum evaporation.
Shown in Fig. 2-3, use and leak version deposited by electron beam evaporation or the thick metal electrode of PECVD regrowth one deck 20nm.
Shown in Fig. 2-4, continue to use method evaporation one deck organic semiconducting materials on gate medium of vacuum evaporation.
Shown in Fig. 2-5, reuse Lou version deposited by electron beam evaporation or the thick metal electrode of PECVD regrowth one deck 50nm.
Fig. 3-1 shows the process chart of making double-layer top electrode organic field effect transistor according to the embodiment of the invention to Fig. 3-5, specifically comprises:
Shown in Fig. 3-1, adopt the thick silicon oxide film of technology growth 300nm of thermal oxide growth on the conductive substrates surface.
Shown in Fig. 3-2, use the method organic semiconducting materials peptide cyanines copper that evaporation one deck 20nm is thick on gate medium of vacuum evaporation.
Shown in Fig. 3-3, use and leak the thick gold electrode of version deposited by electron beam evaporation growth one deck 20nm.
As shown in Figure 3-4, continue to use the method organic semiconducting materials peptide cyanines copper that evaporation one deck 30nm is thick on gate medium of vacuum evaporation.
Shown in Fig. 3-5, reuse the Lou thick gold electrode of version deposited by electron beam evaporation regrowth one deck 50nm.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the manufacture method of a double-layer top electrode organic field effect transistor is characterized in that, this method comprises:
Step 1, the dielectric film of in the conductive silicon substrate, growing;
Step 2, on the dielectric film surface vacuum evaporation one deck organic semiconducting materials;
Step 3, by leaking a version evaporation layer of metal electrode;
Step 4, vacuum evaporation one deck organic semiconducting materials again;
Step 5, by leaking a version deposited by electron beam evaporation evaporation second layer metal electrode, finish the making of device.
2. the manufacture method of double-layer top electrode organic field effect transistor according to claim 1 is characterized in that, the substrate of conductive silicon described in the step 1 is as the grid of organic field effect tube.
3. the manufacture method of double-layer top electrode organic field effect transistor according to claim 1, it is characterized in that, described in the step 1 in the conductive silicon substrate growth dielectric film, be to adopt the method for thermal oxide growth or the method for chemical vapour deposition (CVD) to obtain.
4. the manufacture method of double-layer top electrode organic field effect transistor according to claim 1 is characterized in that, organic semiconducting materials described in the step 2 is the obtaining of method of adopting vacuum evaporation.
5. the manufacture method of double-layer top electrode organic field effect transistor according to claim 1 is characterized in that, electrode metal described in the step 3 obtains by electron beam evaporation or PECVD.
6. the manufacture method of double-layer top electrode organic field effect transistor according to claim 1 is characterized in that, organic semiconducting materials described in the step 4 is to adopt peptide cyanines copper.
7. the manufacture method of double-layer top electrode organic field effect transistor according to claim 1 is characterized in that, what metal electrode described in step 3 and the step 5 adopted is gold.
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| CN102931350A (en) * | 2012-11-20 | 2013-02-13 | 上海交通大学 | Solution-processed bipolar thin film transistor and preparation method thereof |
| CN112599672B (en) * | 2020-12-15 | 2022-08-02 | 惠州学院 | Graphene-enhanced thin film transistor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101083301A (en) * | 2006-05-31 | 2007-12-05 | 中国科学院微电子研究所 | Process for producing nano-scale cross lines array structure organic molecule device |
| CN101101967A (en) * | 2006-07-05 | 2008-01-09 | 中国科学院化学研究所 | Low-cost and high-performance organic field effect transistor and its making method |
| CN101212025A (en) * | 2006-12-28 | 2008-07-02 | 三星Sdi株式会社 | Organic light emitting diode display device and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101083301A (en) * | 2006-05-31 | 2007-12-05 | 中国科学院微电子研究所 | Process for producing nano-scale cross lines array structure organic molecule device |
| CN101101967A (en) * | 2006-07-05 | 2008-01-09 | 中国科学院化学研究所 | Low-cost and high-performance organic field effect transistor and its making method |
| CN101212025A (en) * | 2006-12-28 | 2008-07-02 | 三星Sdi株式会社 | Organic light emitting diode display device and method of fabricating the same |
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